Switched Capacitor DC-DC Converters: a Survey on the Main Topologies, Design Characteristics, and Applications
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Switched-Capacitor Circuits
Switched-Capacitor Circuits David Johns and Ken Martin University of Toronto ([email protected]) ([email protected]) University of Toronto 1 of 60 © D. Johns, K. Martin, 1997 Basic Building Blocks Opamps • Ideal opamps usually assumed. • Important non-idealities — dc gain: sets the accuracy of charge transfer, hence, transfer-function accuracy. — unity-gain freq, phase margin & slew-rate: sets the max clocking frequency. A general rule is that unity-gain freq should be 5 times (or more) higher than the clock-freq. — dc offset: Can create dc offset at output. Circuit techniques to combat this which also reduce 1/f noise. University of Toronto 2 of 60 © D. Johns, K. Martin, 1997 Basic Building Blocks Double-Poly Capacitors metal C1 metal poly1 Cp1 thin oxide bottom plate C1 poly2 Cp2 thick oxide C p1 Cp2 (substrate - ac ground) cross-section view equivalent circuit • Substantial parasitics with large bottom plate capacitance (20 percent of C1) • Also, metal-metal capacitors are used but have even larger parasitic capacitances. University of Toronto 3 of 60 © D. Johns, K. Martin, 1997 Basic Building Blocks Switches I I Symbol n-channel v1 v2 v1 v2 I transmission I I gate v1 v p-channel v 2 1 v2 I • Mosfet switches are good switches. — off-resistance near G: range — on-resistance in 100: to 5k: range (depends on transistor sizing) • However, have non-linear parasitic capacitances. University of Toronto 4 of 60 © D. Johns, K. Martin, 1997 Basic Building Blocks Non-Overlapping Clocks I1 T Von I I1 Voff n – 2 n – 1 n n + 1 tTe delay 1 I fs { --- delay V 2 T on I Voff 2 n – 32e n – 12e n + 12e tTe • Non-overlapping clocks — both clocks are never on at same time • Needed to ensure charge is not inadvertently lost. -
Switched Capacitor Concepts & Circuits
Switched Capacitor Concepts & Circuits Outline • Why Switched Capacitor circuits? – Historical Perspective – Basic Building Blocks • Switched Capacitors as Resistors • Switched Capacitor Integrators – Discrete time & charge transfer concepts – Parasitic insensitive circuits • Signal Flow Graphs • Switched Capacitor Filters – Comparison to Active RC filters – Advantages of Fully Differential filters • Switched Capacitor Gain Circuits • Reducing the Effects of Charge Injection • Tradeoff between Speed and Charge Injection Why Switched Capacitor Circuits? • Historical Perspective – As MOS processes came to the forefront in the late 1970s and early 1980s, the advantages of integrating analog blocks such as active filters on the same chip with digital logic became a driving force for inovation. – Integrating active filters using resistors and capacitors to acturately set time constants has always been difficult, because of large process variations (> +/- 30%) and the fact that resistors and capacitors don’t naturally match each other. – So, analog engineers turned to the building blocks native to MOS processes to build their circuits, switches & capacitors. Since time constants can be set by the ratio of capacitors, very accurate filter responses became possible using switched capacitor techniques Æ Mixed-Signal Design was born! Switched Capacitor Building Blocks • Capacitors: poly-poly, MiM, metal sandwich & finger caps • Switches: NMOS, PMOS, T-gate • Op Amps: at first all NMOS designs, now CMOS Non-Overlapping Clocks • Non-overlapping clocks are used to insure that one set of switches turns off before the next set turns on, so that charge only flows where intended. (“break before make”) • Note the notation used to indicate time based on clock periods: ... (n-1)T, (n-½)T, nT, (n+½)T, (n+1)T .. -
Switched Capacitor Instrumentation Amplifier
LTC1043 Dual Precision Instrumentation Switched Capacitor Building Block FEATURES DESCRIPTIO U ■ Instrumentation Front End with 120dB CMRR The LTC®1043 is a monolithic, charge-balanced, dual ■ Precise, Charge-Balanced Switching switched capacitor instrumentation building block. A pair ■ Operates from 3V to 18V of switches alternately connects an external capacitor to ■ Internal or External Clock an input voltage and then connects the charged capacitor ■ Operates up to 5MHz Clock Rate across an output port. The internal switches have a ■ Low Power break-before-make action. An internal clock is provided ■ Two Independent Sections with One Clock and its frequency can be adjusted with an external capacitor. The LTC1043 can also be driven with an external APPLICATIOU S CMOS clock. The LTC1043, when used with low clock frequencies, ■ Precision Instrumentation Amplifiers provides ultra precision DC functions without requiring ■ Ultra Precision Voltage Inverters, Multipliers precise external components. Such functions are and Dividers differential voltage to single-ended conversion, voltage ■ V–F and F–V Converters inversion, voltage multiplication and division by 2, 3, 4, 5, ■ Sample-and-Hold etc. The LTC1043 can also be used for precise V–F and ■ Switched Capacitor Filters F–V circuits without trimming, and it is also a building block for switched capacitor filters, oscillators and modulators. The LTC1043 is manufactured using Linear Technology’s enhanced LTCMOSTM silicon gate process. , LTC and LT are registered trademarks of Linear Technology -
Switched-Capacitor Integrator
EE247 Lecture 10 • Switched-capacitor filters (continued) – Switched-capacitor integrators • DDI & LDI integrators – Effect of parasitic capacitance – Bottom-plate integrator topology – Switched-capacitor resonators – Bandpass filters – Lowpass filters – Switched-capacitor filter design considerations • Termination implementation • Transmission zero implementation • Limitations imposed by non-idealities EECS 247 Lecture 10 Switched-Capacitor Filters © 2008 H. K. Page 1 Switched-Capacitor Integrator C φ φ I φ 1 2 1 Vin - φ 2 Cs Vo + T=1/fs C C φ I φ I 1 2 Vin Vin - - C C s s Vo Vo + + φ High φ 1 2 High Æ C Charged to Vin s ÆCharge transferred from Cs to CI EECS 247 Lecture 10 Switched-Capacitor Filters © 2008 H. K. Page 2 Switched-Capacitor Integrator Output Sampled on φ1 φ φ 1 2 Vin CI φ - 1 Cs Vo Vo1 + φ φ φ φ φ Clock 1 2 1 2 1 Vin VCs Vo Vo1 EECS 247 Lecture 10 Switched-Capacitor Filters © 2008 H. K. Page 3 Switched-Capacitor Integrator ( (n-1)T n-3/2)Ts s (n-1/2)Ts nTs (n+1/2)Ts (n+1)Ts φ φ φ φ φ Clock 1 2 1 2 1 Vin Vs Vo Vo1 Φ 1 Æ Qs [(n-1)Ts]= Cs Vi [(n-1)Ts] , QI [(n-1)Ts] = QI [(n-3/2)Ts] Φ 2 Æ Qs [(n-1/2) Ts] = 0 , QI [(n-1/2) Ts] = QI [(n-1) Ts] + Qs [(n-1) Ts] Φ 1 _Æ Qs [nTs ] = Cs Vi [nTs ] , QI [nTs ] = QI[(n-1) Ts ] + Qs [(n-1) Ts] Since Vo1= - QI /CI & Vi = Qs / Cs Æ CI Vo1(nTs) = CI Vo1 [(n-1) Ts ] -Cs Vi [(n-1) Ts ] EECS 247 Lecture 10 Switched-Capacitor Filters © 2008 H. -
Review of Technologies and Materials Used in High-Voltage Film Capacitors
polymers Review Review of Technologies and Materials Used in High-Voltage Film Capacitors Olatoundji Georges Gnonhoue 1,*, Amanda Velazquez-Salazar 1 , Éric David 1 and Ioana Preda 2 1 Department of Mechanical Engineering, École de technologie supérieure, Montreal, QC H3C 1K3, Canada; [email protected] (A.V.-S.); [email protected] (É.D.) 2 Energy Institute—HEIA Fribourg, University of Applied Sciences of Western Switzerland, 3960 Sierre, Switzerland; [email protected] * Correspondence: [email protected] Abstract: High-voltage capacitors are key components for circuit breakers and monitoring and protection devices, and are important elements used to improve the efficiency and reliability of the grid. Different technologies are used in high-voltage capacitor manufacturing process, and at all stages of this process polymeric films must be used, along with an encapsulating material, which can be either liquid, solid or gaseous. These materials play major roles in the lifespan and reliability of components. In this paper, we present a review of the different technologies used to manufacture high-voltage capacitors, as well as the different materials used in fabricating high-voltage film capacitors, with a view to establishing a bibliographic database that will allow a comparison of the different technologies Keywords: high-voltage capacitors; resin; dielectric film Citation: Gnonhoue, O.G.; Velazquez-Salazar, A.; David, É.; Preda, I. Review of Technologies and 1. Introduction Materials Used in High-Voltage Film High-voltage films capacitors are important components for networks and various Capacitors. Polymers 2021, 13, 766. electrical devices. They are used to transport and distribute high-voltage electrical energy https://doi.org/10.3390/ either for voltage distribution, coupling or capacitive voltage dividers; in electrical sub- polym13050766 stations, circuit breakers, monitoring and protection devices; as well as to improve grid efficiency and reliability. -
Practical Issues Designing Switched-Capacitor Circuit
Practical Issues Designing Switched-Capacitor Circuit ECEN 622 (ESS) Fall 2011 Practical Issues Designing Switched-Capacitor Circuit Material partially prepared by Sang Wook Park and Shouli Yan ELEN 622 Fall 2011 1 / 27 Switched-Capacitor practical issues Practical Issues Designing Switched-Capacitor Circuit MOS switch G G S Cov Cox Cov D S D Ron o Excellent Roff o Non-idea Effect Charge injection, Clock feed-through Finite and nonlinear Ron ELEN 622 Fall 2011 2 / 27 Switched-Capacitor practical issues Practical Issues Designing Switched-Capacitor Circuit Charge Injection G Qch1 Qch2 C VS o During TR. is turned on, Qch is formed at channel surface Qch = WLC OX (VGS −Vth ) When TR. is off, Qch1 is absorbed by Vs, but Qch2 is injected to C o Charge injected through overlap capacitor o Appeared as an offset voltage error on C ELEN 622 Fall 2011 3 / 27 Switched-Capacitor practical issues Practical Issues Designing Switched-Capacitor Circuit Charge Injection Effect CLK Ideal sw. Vout MOS sw. 0.1pF 1V CLK o When clock changes from high to low, Qch2 is injected to C o Compared to ideal sw., MOS sw. creates voltage error on Vout ELEN 622 Fall 2011 4 / 27 Switched-Capacitor practical issues Practical Issues Designing Switched-Capacitor Circuit Decrease Charge Injection Effect (1) CLK Vout W/L = 1/0.4 0.1pF 1V W/L = 10/0.4 o Decrease the effect of Qch o Use either bigger C or small TR. (small ratio of Cox/C) o Increased Ron ELEN 622 Fall 2011 5 / 27 Switched-Capacitor practical issues Practical Issues Designing Switched-Capacitor Circuit Decrease Charge Injection Effect (2) CLK CLKb 10/0.4 3.1/0.4 Vout With dummy sw. -
Lecture 3 Switched-Capacitor Circuits
ECE1371 Advanced Analog Circuits Lecture 3 Switched-Capacitor Circuits Trevor Caldwell [email protected] Circuit of the Day: Schmitt Trigger Problem: Input is noisy or slowly varying How do we turn this into a clean digital output? 2 ECE1371 Lecture Plan Date Lecture (Wednesday 2-4pm) Reference Homework 2020-01-07 1 MOD1 & MOD2 PST 2, 3, A 1: Matlab MOD1&2 2020-01-14 2 MODN + Toolbox PST 4, B 2: Toolbox 2020-01-21 3 SC Circuits R 12, CCJM 14 2020-01-28 4 Comparator & Flash ADC CCJM 10 3: Comparator 2020-02-04 5 Example Design 1 PST 7, CCJM 14 2020-02-11 6 Example Design 2 CCJM 18 4: SC MOD2 2020-02-18 Reading Week / ISSCC 2020-02-25 7 Amplifier Design 1 2020-03-03 8 Amplifier Design 2 2020-03-10 9 Noise in SC Circuits 2020-03-17 10 Nyquist-Rate ADCs CCJM 15, 17 Project 2020-03-24 11 Mismatch & MM-Shaping PST 6 2020-03-31 12 Continuous-Time PST 8 2020-04-07 Exam 2020-04-21 Project Presentation (Project Report Due at start of class) 3 ECE1371 What you will learn… • Motivation for SC Circuits • Basic sampling switch and charge injection errors • Fundamental SC Circuits Sample & Hold, Gain and Integrator • Other Circuits Bootstrapping, SC CMFB 4 ECE1371 Why Switched-Capacitor? • Used in discrete-time or sampled-data circuits Alternative to continuous-time circuits • Capacitors instead of resistors Capacitors won’t reduce the gain of high output impedance OTAs No need for low output impedance buffer to drive resistors • Accurate frequency response Filter coefficients determined by capacitor ratios (rather than RC time constants and clock frequencies) Capacitor matching on the order of 0.1% - when the transfer characteristics are a function of only a capacitor ratio, it can be very accurate RC time constants vary by up to 20% 5 ECE1371 Basic Building Blocks • Opamps Ideal usually assumed Some important non-idealities to consider include: 1. -
Analysis of Performance of Switched Capacitor Circuits E
et International Journal on Emerging Technologies 11 (2): 863-869(2020) ISSN No. (Print): 0975-8364 ISSN No. (Online): 2249-3255 Analysis of Performance of Switched Capacitor Circuits E. Sreenivasa Rao 1, S. Aruna Deepthi 2 and M. Satyam 3 1Professor and HOD, Department of Electronics and Communications, Vasavi College of Engineering (Telangana), India. 2Assistant Professor, Department of Electronics and Communications Vasavi College of Engineering (Telangana), India. 3Professor, Department of Electronics and Communications Vasavi College of Engineering (Telangana), India. (Corresponding author: S. Aruna Deepthi) (Received 04 January 2020, Revised 03 March 2020, Accepted 05 March 2020) (Published by Research Trend, Website: www.researchtrend.net) ABSTRACT: In switched capacitor circuits, it is quite common to use MOSFET switches, integrated capacitors (IC) and non-overlapping clocks for carrying out switching operations. MOSFET switches are far from ideal switches mainly when they are operated with small operating voltages. Some investigations have been carried out on the performance of switched capacitor resistors (SCRs) with the switches operated under varied conditions. Further, an attempt has been made to find out how closely SCR represents conventional resistors. It has been found that the SCRs with ideal components satisfy the properties of series and parallel connected conventional resistors. Further, the energy dissipation in SCR is the same as that in conventional resistors when operated under fixed voltage difference. FET based SCRs exhibit higher resistance values, compared to SCRs with ideal switches depending on the operating conditions. When SCRs are loaded with conventional resistors or capacitors, their output is entirely different from those, where only conventional components are used. -
Mcnearney, Eugene Master's Thesis
Analysis of Droplet-target interactions in electrostatically charged spraying systems A thesis submitted in partial fulfilment of the requirements for the degree of Master of Engineering, in Electrical and Electronic Engineering at the university of Canterbury by E. J. McNearney, B.E. Hons University of Canterbury, Christchurch, New Zealand December 2020. Abstract Increasing demands for food production and other agricultural products push demands for improved crop yields. Chemical pest management in the form of pesticides is a widely used method of increasing crop yields, over 90% of which is applied as liquid sprays. Poor application efficacy of these pesticides onto the target plant introduce concerns for both the environment and human health for those that come into contact. Traditional spraying techniques result in up to 70% off target losses, with less than 1% of the active chemical reaching the target pest. These losses are highly configuration dependent needing to be selected for the target plant and environmental conditions. One method to improve spray efficacy, electrostatically charging the liquid spray, has been previously introduced to market. This thesis has investigated factors influencing the liquid spray deposition onto the target, looking into plant impedances and using computer vision to quantify depositions with the ESS electrostatic nozzle. A high voltage power supply has also been developed to allow control of nozzle voltage. Leaf to ground impedances of potted grapevines were investigated as well as potential sources for the found values. It was found that the frequency and impedance relationship appears to follow dispersions found in other living tissues. It was also found that physical junctions in the plant where plant fibres intersect provided the largest impedance contributions with apparent linear regions in between. -
Voltage Doubler Circuit with 555 Timer
VOLTAGE DOUBLER CIRCUIT WITH 555 TIMER A Project report submitted in partial fulfilment of the requirements for the degree of B. Tech in Electrical Engineering By ASHFAQUE ARSHAD (11701614014) AKSHAY KUMAR (11701614005) DEBAYAN MANNA (11701614019) SURESH SAHU (11701614056) Under the supervision of MR. SUBHASIS BANERJEE Assistant Professor, Electrical Engineering, RCCIIT Department of Electrical Engineering RCC INSTITUTE OF INFORMATION TECHNOLOGY CANAL SOUTH ROAD, BELIAGHATA, KOLKATA – 700015, WEST BENGAL Maulana Abul Kalam Azad University of Technology (MAKAUT) © 2018 1 ACKNOWLEDGEMENT It is my great fortune that I have got opportunity to carry out this project work under the supervision of (Voltage Doubler Circuit with 555 Timer Circuit under the supervision of Mr. Subhasis Banerjee) in the Department of Electrical Engineering, RCC Institute of Information Technology (RCCIIT), Canal South Road, Beliaghata, Kolkata-700015, affiliated to Maulana Abul Kalam Azad University of Technology (MAKAUT), West Bengal, India. I express my sincere thanks and deepest sense of gratitude to my guide for his constant support, unparalleled guidance and limitless encouragement. I wish to convey my gratitude to Prof. (Dr.) Alok Kole, HOD, Department of Electrical Engineering, RCCIIT and to the authority of RCCIIT for providing all kinds of infrastructural facility towards the research work. I would also like to convey my gratitude to all the faculty members and staffs of the Department of Electrical Engineering, RCCIIT for their whole hearted cooperation -
Zero-Voltage Switching Flyback-Boost Converter with Voltage-Doubler Rectifier for High Step-Up Applications
Zero-Voltage Switching Flyback-Boost Converter with Voltage-Doubler Rectifier for High Step-up Applications Hyun-Wook Seong, Hyoung-Suk Kim, Ki-Bum Park, Gun-Woo Moon, and Myung-Joong Youn Department of Electrical Engineering, KAIST 373-1 Guseong-dong, Yuseong-gu, Daegeon, Republic of Korea, 305-701 [email protected] Abstract -- A zero-voltage switching (ZVS) flyback-boost (FB) output rectifier produces the high voltage spike. Thus, the converter with a voltage-doubler rectifier (VDR) has been snubber network is required across the output rectifier, which proposed. By combining the common part between a flyback results in a degraded efficiency. converter and a boost converter as a parallel-input/series-output As an attractive solution over aforementioned topologies, (PISO) configuration, this proposed circuit can increase a step- up ratio and clamp the surge voltage of switches. The secondary the flyback-boost (FB) converter was proposed as shown in VDR provides a further extended step-up ratio as well as its Fig. 1 [5], [6]. It can achieve a higher step-up ratio due to voltage stress to be clamped. An auxiliary switch instead of a both a transformer and a parallel-input/series-output (PISO) boost diode enables all switches to be turned on under ZVS configuration. Since the voltage spike across the switch is conditions. The zero-current turn-off of the secondary VDR limited to the output voltage of the boost converter, no alleviates its reverse-recovery losses. The operation principles, protection circuit is required. Furthermore, since the energy the theoretical analysis, and the design consideration are investigated. -
DESIGN and SIMULATION of a HIGH PERFORMANCE CMOS VOLTAGE DOUBLERS USING CHARGE REUSE TECHNIQUE 1. Introduction
Journal of Engineering Science and Technology Vol. 12, No. 12 (2017) 3344 - 3357 © School of Engineering, Taylor’s University DESIGN AND SIMULATION OF A HIGH PERFORMANCE CMOS VOLTAGE DOUBLERS USING CHARGE REUSE TECHNIQUE SHAMIL H. HUSSEIN Dept. of Electrical Engineering, College of Engineering, University of Mosul, Mosul, Iraq E-mail: [email protected] Abstract Voltage doubler (VD) structure plays an important role in charge pump (CP) circuits. It provides a voltages that is higher than the voltage of the power supply or a voltage of reverse polarity. In many applications such as the power IC and switched-capacitor transformers. This paper presents the design and analysis for VD using charge reuse technique CMOS 0.35µm tech. with high performance. Bootstrapped and charge reuse techniques is used to improve performance of integrated VD. Charge reusing method is based on equalizing the voltages of the pumping capacitances in each stage of CP. As a consequence, it reduces the load independent losses, improve the efficiency. Simulation using Orcad is applied for various VD structures shows improvement in charge reuse technique compared with existing counterpart. The results obtained show that the VD can be used in a wide band frequencies (0-100 MHz) or greater. The charge reuse VD circuit provided a good efficiency about (87.6%) and (83.5%) for one stage and two stage respectively at pump capacitance of 57pf, load current of 1mA, frequency of 10 MHz and supply voltage is 3.5 V compared with one stage and two stage of a latched VD are (85.4%) and (80%) respectively.