Practical Issues Designing Switched- Circuit

ECEN 622 (ESS) Fall 2011 Practical Issues Designing Switched-Capacitor Circuit

Material partially prepared by Sang Wook Park and Shouli Yan

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 MOS

G

G

S Cov Cox Cov D

S D Ron

o Excellent Roff

o Non-idea Effect

 Charge injection, Clock feed-through

 Finite and nonlinear Ron

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 Charge Injection

G

Qch1 Qch2

C VS

o During TR. is turned on, Qch is formed at channel surface

 Qch = WLC OX (VGS −Vth )

 When TR. is off, Qch1 is absorbed by Vs, but Qch2 is injected to C

o Charge injected through overlap capacitor

o Appeared as an offset voltage error on C

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 Charge Injection Effect

CLK Ideal sw.

Vout

MOS sw. 0.1pF 1V

CLK

o When clock changes from high to low, Qch2 is injected to C

o Compared to ideal sw., MOS sw. creates voltage error on Vout

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 Decrease Charge Injection Effect (1)

CLK

Vout

W/L = 1/0.4 0.1pF 1V

W/L = 10/0.4

o Decrease the effect of Qch

o Use either bigger C or small TR. (small ratio of Cox/C)

o Increased Ron

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 Decrease Charge Injection Effect (2)

CLK CLKb

10/0.4 3.1/0.4 Vout

With dummy sw. 0.1pF 1V

Single sw.

o Use dummy switch which provides opposite charge o Adjust size of dummy sw. for exact canceling o Needs opposite clock

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 Decrease Charge Injection Effect (3)

CLK

10/0.4 Vout CMOS sw. 23/0.4 0.1pF 1V

CLKb NMOS sw.

o Use N/PMOS complementary switch

o Both Qch cancel out due to their opposite polarity o Needs opposite clock, increased parasitic capacitance

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 Nonlinear Ron

VDD Ron

7.5/0.4 1.5V

18/0.4 PMOS NMOS Vin

GND

N/PMOS

Vin

o Ron varies with signal amplitude o CMOS sw. can adopt large signal o Needs opposite clock, increased parasitic capacitance

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 Slow Settling due to high Ron

CLK CLKb

V1 Vout

20pF 10pF Vin

o Ron varies with signal amplitude o CMOS sw. can adopt large signal o Needs opposite clock, increased parasitic capacitance

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 Slow Settling due to high Ron

Vout Vout Ideal sw.

NMOS sw.

V1 V1

o Small NMOS sw. (5/0.4)

o With high Ron, output is not settled o In case of large signal input, N/PMOS sw. should be used

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 Slow Settling due to high Ron

Vout Vout Ideal sw.

NMOS sw.

V1 V1

o Large NMOS sw. (20/0.4)

o Low Ron makes output settled fast o Close to ideal sw.

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 Switch and Clock Arrangement

CKb

M5

C3 CK

M6 CKe CKbe

CK CKbe

C1 C M1 M2

CK CKb CKb CKe

M3 M4

C2

o M2, M4 : small sw., Others : large sw. o M2, M4 turn off earlier : minimize charge injection effect o Charge injection  M2, M4 (M3, M6) : Signal independent  Others : Signal dependent

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 Switch and Clock Arrangement

Ideal sw.

Different sw. (30/0.4, 5/0.4) Early CLK

Same sw. (5/0.4) Same CLK

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 PSS vs. Transient Simulation

fin = 10KHz PSS-PAC simulation

fin = 100KHz

fin = 200KHz o PSS simulation is used to check the frequency response for Switched-capacitor circuit o Should be compared with transient simulation

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 Capacitor Layout

Cfr

D D D D D

C fr D C1 C2 D D C fr C1 2 Cox = Cfr D C2 C1 C2 D C2 3

D D D D D

Cfr Cox Cfr

o Capacitor is implemented with PIP (poly) or MIM ()

o Total capacitance is the sum of Cox and Cfr’s o Ratio is more important than absolute value o Multiples of unit capacitor can minimize ratio error o Unit capacitor can be determined by process o Surrounding capacitor bank with dummies is preferred

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 Layout Example

o Example of SC biquad circuit (TSMC 0.35um)

ELEN 622 Fall 2011 16 / 27 Switched-Capacitor practical issues Practical Issues Designing Switched-Capacitor Circuit Low Voltage Circuits

• Challenges of LV SC circuit GON design [cas95] – SC circuits are widely used in filters, data converters, sample and hold, and other analog signal processing VDD building blocks. V V -V – LV SC circuit design is very T,P DD T,N challenging due to the difficulties Switch conductance for high involved in turning on MOS VDD(such as 5V) . GON • Solutions – Low and/or multi Vt process VDD – Clock boostering or bootstrap – Switched opamp VDD-VT,N VT,P

Switch conductance for low VDD ELEN 622 Fall 2011 17 / 27 Switched-Capacitor practical issues Practical Issues Designing Switched-Capacitor Circuit

Low Voltage Switched Capacitor Circuits (Cont’d)

• Low and/or multi Vt process VDD [ada90] M2 2V – Expensive M1 DD – Switch leakage while it is off – Vt is not tightly controlled for low C1 C2 M3 Vt • Clock boostering or bootstrap M4 – Earlier work ( see right figure ) required that transistors could 2VDD sustain maximum of 2Vdd [nak91, cho95, VDD rab98] 0 0 – This could not be used in finer due to reduced breakdown voltage

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Low Voltage Switched Capacitor Circuits (Cont’d)

– Constant overdrive bootstrap clock driving solved this problem [abo99] – Reliability is improved as each just sustains Vdd as maximum voltage – More power consumption and lower speed due to its complexity – Potential reliability problem during transient

VDD VDD Msw CB φ1 φ1 φ1 At φ1 A B CB φ1 At φ1 C Msw φ1 B A B A B

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– Detailed schematic and wave form [abo99] • M1, M2, C1, C2 and the inverter could be shared by the switches with the same phase, other components need to be repeated for every switch.

M2 M3 VDD φ1

M1 M10 M8

M7 M4 C3 M13 C1 C2 M5 Msw φ1 φ1 M9 M12 A B

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C • Switched opamp [cro94,bas97, FB pel98] C IN S4 – In conventional SC circuits, S1 is the critical switch, as it sees S1 wide signal swing S2 S3 – Switched opamp eliminated S1 by switching on and off the VREF Conventional SC circuits CFB – True low voltage operation – Potential of low power CIN S4 consumption – Slower speed ( usually clock S2 S3 freq. is around several KHz to 1

or 2 MHz ) due to the need to VREF switch on and off the opamp Switched opamp circuits ELEN 622 Fall 2011 21 / 27 Switched-Capacitor practical issues Practical Issues Designing Switched-Capacitor Circuit

• Low voltage also poses difficulties for designing the SC Opamps – To maximize output voltage swing, cascoding of output transistors should be avoided – To achieve required DC gain, two stage architecture may have to be used instead of single stage OTA – Frequency compensation is an essential issue to make the amplifier stable and fast settling – Input common mode bias voltage need to close one of the supply rails to make input transistors operate correctly ( close to Vss -- PMOS input; close to Vdd – NMOS input ) – Input and output need to be biased at different DC levels, level shift may be necessary for switched opamp circuits

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• LV SC opamp design example I [abo99] – Two-stage architecture is adopted to achieve high enough gain – Simple output stage maximizes output voltage swing – First stage is folded-cascode stage with cascode load to obtain a high gain, as nodes A and B have a small signal voltage swing, and supplyV voltage=1.5 V and VTN permit this luxury DD M12 M4 M3 M5 M13

M6 M7 V Cc Cc VO- O+ VI+ VI- A M1 M2 B

M8 M9

M14 M10 M11 M15

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– Cascode frequency compensation [ahu83] is used to have a higher bandwidth over conventinal Miller compensation

– The functionality of the circuit is independent of VIN_CM setting, thus VIN_CM could be set to a DC level which makes the amplifier work properly

Cf S1 VIN VOUT

S1 1.5b ADC 1.5b ADC Cs output

S1 VIN_CM

+V -V R 0 R The X2 residue amplifier for 1.5b/stage pipeline A/D converter

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• LV SC opamp design example II [rab97] – Two-stage architecture with miller compensation – Push-pull operation of the second stage maximize driving capacity – Two common-mode feedback loops are required to stablize the bias condition

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• LV SC opamp design example III [pel98] – One-stage architecture is used due to relaxed system requirement for the DC gain – Class AB operation lowers power consumption – Low voltage current mirror makes more room for the input transistors

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References

[abo99] A. M. Abo and P. R. Gray, “A 1.5-V, 10-, 14.3-MS/s CMOS pipeline analog-to-digital converter,” IEEE J. Solid-State Circuits, vol. 34, no. 5, pp. 599-606, May 1999 [ada90] T. Adachi, A. Ishikawa, A. Barlow, and K. Takasuka, “A 1.4 V switched capacitor filter,” IEEE CICC 1990, pp. 8.2.1-8.2.4, 1990 [ahu83] B. K. Ahuja, “An improved frequency compensation technique for CMOS operational ,” IEEE J. Solid-State Circuits, vol. SC-18, no. 6, pp. 629-633, Dec. 1983 [bas97] A. Baschirotto and R. Castello, “A 1-V 1.8-MHz CMOS switched-opamp SC filter with rail-to-rail output swing ,” IEEE J. Solid-State Circuits, vol. 32, no. 12, pp. 1979-1986, Dec. 1997 [cas95] R. Castello, F. Montecchi, F. Rezzi, and A. Baschirotto, “Low-voltage analog filters,” IEEE Trans. Circuits and Systems – I, vol. 42, no. 11, pp. 827-840, Nov. 1995 [cho95] T. B. Cho and P. R. Gray, “A 10 b, 20 Msample/s, 35 mW pipeline A/D converter,” IEEE J. Solid-State Circuits, vol. 30, no. 3, pp. 166-172, March 1995 [cro94] J. Crols and M. Steyaert, “Switched-opamp: an approach to realize full CMOS switched- capacitor circuits at very low power supply voltages,” IEEE J. Solid-State Circuits, vol. 29, no. 8, pp. 936-942, Aug. 1994 [nak91] Y. Nakagome, et al. “An experimental 1.5-V 64-Mb DRAM,” IEEE J. Solid-State Circuits, vol. 26, no. 4, pp. 465-472, April 1991 [pel98] V. Peluso, P. Vancorenland, A. M. Marques, M. S. J. Steyaert, and W. Sansen, “A 900- mV low-power Σ∆ A/D converter with 77-dB dynamic range,” IEEE J. Solid-State Circuits, vol. 33, no. 12, pp. 1887-1897, Dec. 1998 [rab97] S. Rabii and B. A. Wooley, “A 1.8-V sigma-delta modulator in 0.8 um CMOS,” IEEE J. Solid-State Circuits, vol. 32, no. 6, pp. 783-796, June 1997

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