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Technical Paper TECHNICAL PAPER Improved ESR on MnO2 Tantalum Capacitors at Wide Voltage Range I. Horacek, T. Zednicek, M. Komarek, J. Tomasko, and S. Zednicek AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic W. A. Millman AVX Limited Long Road, Paignton, Devon TQ4 7ER, United Kingdom J. Sikula and J. Hlavka Czech Noise Research Laboratory Brno University of Technology Technicka 8, 616 00 Brno, Czech Republic Abstract: One common trend in switch-mode power supply, micro-processor, and digital circuit applications is to achieve reduced noise while operating at higher frequencies. In order to realize this, components with low Equivalent Series Resistance (ESR), high capacitance and high reliability are required. A new generation of Low ESR tantalum chip capacitors has been developed utilizing a low resistivity MnO2 electrolyte that enables very low component ESR. MnO2 technology provides excellent field performance, environmental stability and high electrical and thermal stress resistance in wide voltage range from four to thirty-five volts. The capacitors are designed for operation in temperatures up to 125°C. 2020© INTRODUCTION processes was selected for New TPS Series III design as the optimum compromise between low ESR Tantalum capacitor technology has many and cost requirements. characteristics ideal for filtering applications in DC/DC MnO Conductivity converters, power supplies and other applications. 2 The most important and common characteristics are: Much experimental research has focused on improving the MnO2 conductivity by optimising Low and Stable ESR pyrolysis conditions [3, 4]. This has resulted in High Capacitance Retention at High significant overall ESR reduction. Frequencies While process design of experiments can optimise Low Failure Rate ESR, the basic physics behind conductivity Wide Voltage Range processes in MnO2 was not fully understood. This Surge Robustness led to the conclusion that ESR levels below 50mΩ Environment (moisture/temperature) for tantalum capacitors could only be achieved by Resistant either conductive polymer or multi-anode solutions. Low Cost Current research in co-operation with Czech Noise The above features were taken as the development Research Laboratory of Brno University of Technology criteria for the new TPS Series III of very low ESR suggests that the capability for MnO2 to achieve high conductivity in tantalum capacitors has been under- capacitors. MnO2 technology in conjunction with tantalum dielectric is best suited to meet all of the estimated. Now, based on a better understanding of criteria including low ESR, excellent stability, the physical mechanisms involved, we are able to reliability and wide voltage range. demonstrate that ESR values can be significantly improved by modification of MnO2 technology in accordance with the energy level diagram shown DESIGN FOR VERY LOW AND STABLE ESR below: Ta Anode Shape T a 2 O 5 M n O 2 The overall surface area of a tantalum capacitor anode, particularly its surface-to-volume ratio, is one EC of the key parameters that defines its ESR value - the higher the overall surface area, the lower the EC ESR. EF EV U EF a)single anode b)multi anode c)fluted anode EV Fig. 1. Anode seign in cross section The single anode (Figure 1a) is the standard used Fig. 2. Band diagram of tantalum capacitor for general capacitor designs because of cost and in normal mode performance efficiency. A multi-anode design (Figure 1b) offers the lowest possible ESR [1,2]; A tantalum capacitor can be represented by MIS however it is a more costly solution. Apart from hetero-structure with N-type MnO2 semiconductor additional manufacturing steps (e.g. multiple having a band diagram, as illustrated in Figure 2 internal welds), there is also a production yield (see also Figure 5). In this model, MnO2:β phase has impact. If the standard yield for single anode (the a band gap of 0.26 eV and MnO2:γ phase 0.58-0.7 eV. active capacitor element) is ~ 90%, then the total When an ideal MIS structure is biased, three cases yield for three anodes in a single assembly is ~ may exist at the semiconductor surface: the 0.9x0.9x0.9 = 73%, entailing higher cost compared to accumulation of carriers near the semiconductor a single anode solution. The fluted anode design surface, depletion of carriers and carrier inversion. (Figure 1.c) using standard chip assembly These parameters are also dependent on bulk conductivity, carrier concentration (typically 1019 cm-3 with mobility (1-3) Ωcm2/Vs), and surface charge density or surface potential Lower ESR in tantalum capacitors is also (also a function of MnO2 crystals surface associated with lower capacitance loss with morphology). The volume of MnO2 and its crystals frequency and higher continuous ripple current surface potential depend on temperature. ratings [1]. These effects depend on the actual Conductivity (ESR) increases with temperature and ESR level, and are of the technology employed. humidity. Both the morphology /structure and Hence, for example, D case capacitors having a conductivity of MnO2 crystals are crucial to ESR 100kHz ESR of 50mΩ made with MnO2 or improvement. The interfaces between Ta - Ta2O5 conductive polymer materials will show about the and Ta2 O5 - MnO2 are also important to consider same capacitance loss with frequency and have for ESR versus frequency characteristics. equivalent ripple current ratings (power dissipation for a molded D case part is essentially Figure 3 is a comparison of typical ESR values independent of the electrolyte technology used). The at 100kHz for conventional TPS and Series III TPS. capacitance loss over frequency for the same group of parts as above is shown in Figure 5, and a ripple current comparison is shown in Fig.6. Capacitance frequency behaviour L O W E S R C O D E S Typical Values 140 120 100 80 100 60 40 80 20 D100/10 55mO Polymer 0 60 D330K6R3 D220K10 40 D100/10 50mO TPS III TPS TIERIII 20 D100/10 100mO STD TPS 0 100 1000 10000 100000 Fig. 3. Conventional TPS vs Tier III typical ESR value Frequency (Hz) Fig. 5. TPS, TPS III and Polymer Cap vs frequency ESR, Capacitance vs frequency, Higher Ripple Load The ESR improvements resulting from the new Low ESR Series III technology can be seen Ripple Current(mA)@100kHz o o o over whole frequency range from 100Hz up to the Series PartNumber 25 C 85 C 125 C capacitor’s self-resonance frequency. A comparison conventionalTPS TPSD107K010R0100 1225 1102 490 of a conventional TPS low ESR capacitor D TPS Series III TPSD107K010R0050 1732 1559 693 case 100µF 10V with 100mΩ ESR, a new TPS Series III D case 100µF 10V with 50mΩ ESR and Fig. 6. TPS and TPS III Ripple Current Comparison a conductive polymer D100µF 10V with 55mΩ ESR are shown in Figure 4. Temperature Dependence of ESR The temperature behaviour of ESR for new TPS III ESR frequency behaviour 10 capacitors, as compared to conventional low ESR tantalum and polymer tantalum capacitors is shown in D100/10 55mO Polymer Figure 7. D100/10 50mO TPS III 1 D100/10 100mO STD TPS The conductivity of MnO2 increases as temperature increases. When used as the counter-electrode material in tantalum capacitors, this gives lower ESR 0.1 as temperature increases. This is a significant difference to the ESR characteristic of polymer counter-electrode systems, which do not have 0.01 100 1000 10000 100000 increased conductivity. This is an important Frequency (Hz) consideration in applications with higher operating temperature. Fig. 4 . TPS, TPS III and Polymer ESR vs. frequency SURGE ROBUST ESR frequency behaviour@ 85C 10 Active Surge Load Suppression D100/10 55mO Polymer D100/10 50mO TPS III 1 Following the improvements made in the graphite D100/10 100mO STD TPS and silver materials, humidity and stress absorption barriers were also evaluated in the new TPS Series III design. The role of these barriers is to 0.1 absorb any mechanical stresses that can occur (typically during pcb manufacture) as well as electrical stresses (typically in low impedance 0.01 100 1000 10000 100000 circuits such as in power supply applications). Frequency (Hz) Advanced Surge Testing Fig. 7. TPS, TPS III and Polymer vs frequency 85°C An intelligent dynamic surge test has been Graphite and Silver Counter-electrode Materials developed based on observations of thermal runaway in overloading conditions – see CARTS Graphite and silver polymeric materials are used as published papers [7,8]. The new TPS Series III is part of the outer counter-electrode layers. The 100% surge screened using this system during self-resistance and contact resistance of these production. materials also has a significant effect on the overall ESR and ESR stability (see Figure 6). It can be expected that interface resistance between MnO2 LOW FAILURE RATE and DCL and graphite is also dependent on the material formulation and how it is applied. Close co- Efficient Self-Healing operation with manufacturers of these materials has resulted in an improved materials system for Tantalum capacitors are well known for good reliability the new TPS series III to maintain a low and stable characteristics, no dielectric wear-out mechanism ESR under various humidity and high temperature and decreasing failure rate with time under steady conditions. state conditions. The self-healing process of MnO2 is responsible for this behaviour. Current flowing Highly accelerated tests were used to evaluate ESR through a defect site in Ta2O5 dielectric heats o stability. Standard TPS and TPS Series III units MnO2 at the interface. At temperatures about 400 C, st were subjected to a 1 reflow cycle, then subjected the conductive semiconductor MnO2 will change to to a pressure cooker test (two hours humidity Mn2O3, a material having much higher resistivity. exposure at two atmosphers pressure at 120°C) This process can isolate the failure site and self- followed by a 2nd exposure to reflow.
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