Design of Efficient Pass-Transistor Binary ALU
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Role of Mosfets Transconductance Parameters and Threshold Voltage in CMOS Inverter Behavior in DC Mode
Preprints (www.preprints.org) | NOT PEER-REVIEWED | Posted: 28 July 2017 doi:10.20944/preprints201707.0084.v1 Article Role of MOSFETs Transconductance Parameters and Threshold Voltage in CMOS Inverter Behavior in DC Mode Milaim Zabeli1, Nebi Caka2, Myzafere Limani2 and Qamil Kabashi1,* 1 Department of Engineering Informatics, Faculty of Mechanical and Computer Engineering ([email protected]) 2 Department of Electronics, Faculty of Electrical and Computer Engineering ([email protected], [email protected]) * Correspondence: [email protected]; Tel.: +377-44-244-630 Abstract: The objective of this paper is to research the impact of electrical and physical parameters that characterize the complementary MOSFET transistors (NMOS and PMOS transistors) in the CMOS inverter for static mode of operation. In addition to this, the paper also aims at exploring the directives that are to be followed during the design phase of the CMOS inverters that enable designers to design the CMOS inverters with the best possible performance, depending on operation conditions. The CMOS inverter designed with the best possible features also enables the designing of the CMOS logic circuits with the best possible performance, according to the operation conditions and designers’ requirements. Keywords: CMOS inverter; NMOS transistor; PMOS transistor; voltage transfer characteristic (VTC), threshold voltage; voltage critical value; noise margins; NMOS transconductance parameter; PMOS transconductance parameter 1. Introduction CMOS logic circuits represent the family of logic circuits which are the most popular technology for the implementation of digital circuits, or digital systems. The small dimensions, low power of dissipation and ease of fabrication enable extremely high levels of integration (or circuits packing densities) in digital systems [1-5]. -
Logic Styles with Mosfets
Logic Styles with MOSFETs NMOS Logic One way of using MOSFET transistors to produce logic circuits uses only n-type (n-p-n) transistors, and this style is called NMOS logic (N for n-type transistors). An inverter circuit in NMOS is shown in the figure with n-p-n transistors replacing both the switch and the resistor of the inverter circuit examined earlier. The lower transistor in the circuit operates as a switch exactly as the idealised switch in the original circuit: with 5V on the Gate input, the conducting channel is created in the transistor and the “switch” is closed; with 0V on the Gate there is no channel and the transistor is non-conducting - the “switch” is open. The depletion mode transistor is produced by adding a small amount of donor material to the The upper transistor, called a depletion mode channel region of a n-p-n transistor, so that there are a small number of free electrons in the channel transistor, operates as a resistor to limit current even when there is no electric field across the flow when the “switch” is closed. This transistor is insulator. This provides a connection through the a modified n-p-n transistor that always has a transistor for all Gate voltages. The conductivity of channel present and is always conducting, although the channel is lowest (Resistance is highest) when the conductivity is low when there is 0V on the the Gate is at 0V. When the Gate is at 5V and more Gate and higher when 5V is on the Gate: see Box. -
MOSFET - Wikipedia, the Free Encyclopedia
MOSFET - Wikipedia, the free encyclopedia http://en.wikipedia.org/wiki/MOSFET MOSFET From Wikipedia, the free encyclopedia The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET, NMOS FET, PMOS FET, nMOS FET, pMOS FET). The 'metal' in the name (for transistors upto the 65 nanometer technology node) is an anachronism from early chips in which the gates were metal; They use polysilicon gates. IGFET is a related, more general term meaning insulated-gate field-effect transistor, and is almost synonymous with "MOSFET", though it can refer to FETs with a gate insulator that is not oxide. Some prefer to use "IGFET" when referring to devices with polysilicon gates, but most still call them MOSFETs. With the new generation of high-k technology that Intel and IBM have announced [1] (http://www.intel.com/technology/silicon/45nm_technology.htm) , metal gates in conjunction with the a high-k dielectric material replacing the silicon dioxide are making a comeback replacing the polysilicon. Usually the semiconductor of choice is silicon, but some chip manufacturers, most notably IBM, have begun to use a mixture of silicon and germanium (SiGe) in MOSFET channels. Unfortunately, many semiconductors with better electrical properties than silicon, such as gallium arsenide, do not form good gate oxides and thus are not suitable for MOSFETs. -
EE 434 Lecture 2
EE 330 Lecture 6 • PU and PD Networks • Complex Logic Gates • Pass Transistor Logic • Improved Switch-Level Model • Propagation Delay Review from Last Time MOS Transistor Qualitative Discussion of n-channel Operation Source Gate Drain Drain Bulk Gate n-channel MOSFET Source Equivalent Circuit for n-channel MOSFET D D • Source assumed connected to (or close to) ground • VGS=0 denoted as Boolean gate voltage G=0 G = 0 G = 1 • VGS=VDD denoted as Boolean gate voltage G=1 • Boolean G is relative to ground potential S S This is the first model we have for the n-channel MOSFET ! Ideal switch-level model Review from Last Time MOS Transistor Qualitative Discussion of p-channel Operation Source Gate Drain Drain Bulk Gate Source p-channel MOSFET Equivalent Circuit for p-channel MOSFET D D • Source assumed connected to (or close to) positive G = 0 G = 1 VDD • VGS=0 denoted as Boolean gate voltage G=1 • VGS= -VDD denoted as Boolean gate voltage G=0 S S • Boolean G is relative to ground potential This is the first model we have for the p-channel MOSFET ! Review from Last Time Logic Circuits VDD Truth Table A B A B 0 1 1 0 Inverter Review from Last Time Logic Circuits VDD Truth Table A B C 0 0 1 0 1 0 A C 1 0 0 B 1 1 0 NOR Gate Review from Last Time Logic Circuits VDD Truth Table A B C A C 0 0 1 B 0 1 1 1 0 1 1 1 0 NAND Gate Logic Circuits Approach can be extended to arbitrary number of inputs n-input NOR n-input NAND gate gate VDD VDD A1 A1 A2 An A2 F A1 An F A2 A1 A2 An An A1 A 1 A2 F A2 F An An Complete Logic Family Family of n-input NOR gates forms -
Vlsi Design Lecture Notes B.Tech (Iv Year – I Sem) (2018-19)
VLSI DESIGN LECTURE NOTES B.TECH (IV YEAR – I SEM) (2018-19) Prepared by Dr. V.M. Senthilkumar, Professor/ECE & Ms.M.Anusha, AP/ECE Department of Electronics and Communication Engineering MALLA REDDY COLLEGE OF ENGINEERING & TECHNOLOGY (Autonomous Institution – UGC, Govt. of India) Recognized under 2(f) and 12 (B) of UGC ACT 1956 (Affiliated to JNTUH, Hyderabad, Approved by AICTE - Accredited by NBA & NAAC – ‘A’ Grade - ISO 9001:2015 Certified) Maisammaguda, Dhulapally (Post Via. Kompally), Secunderabad – 500100, Telangana State, India Unit -1 IC Technologies, MOS & Bi CMOS Circuits Unit -1 IC Technologies, MOS & Bi CMOS Circuits UNIT-I IC Technologies Introduction Basic Electrical Properties of MOS and BiCMOS Circuits MOS I - V relationships DS DS PMOS MOS transistor Threshold Voltage - VT figure of NMOS merit-ω0 Transconductance-g , g ; CMOS m ds Pass transistor & NMOS Inverter, Various BiCMOS pull ups, CMOS Inverter Technologies analysis and design Bi-CMOS Inverters Unit -1 IC Technologies, MOS & Bi CMOS Circuits INTRODUCTION TO IC TECHNOLOGY The development of electronics endless with invention of vaccum tubes and associated electronic circuits. This activity termed as vaccum tube electronics, afterward the evolution of solid state devices and consequent development of integrated circuits are responsible for the present status of communication, computing and instrumentation. • The first vaccum tube diode was invented by john ambrase Fleming in 1904. • The vaccum triode was invented by lee de forest in 1906. Early developments of the Integrated Circuit (IC) go back to 1949. German engineer Werner Jacobi filed a patent for an IC like semiconductor amplifying device showing five transistors on a common substrate in a 2-stage amplifier arrangement. -
CSCE 5730 Digital CMOS VLSI Design
Lecture 2: Overview CSCE 5730 Digital CMOS VLSI Design Instructor: Saraju P. Mohanty, Ph. D. NOTE: The figures, text etc included in slides are borrowed from various books, websites, authors pages, and other sources for academic purpose only. The instructor does not claim any originality. CSCE 5730: Digital CMOS VLSI Design 1 Lecture Outline • Historical development of computers • Introduction to a basic digital computer • Five classic components of a computer • Microprocessor • IC design abstraction level • Intel processor family • Developmental trends of ICs • Moore’s Law CSCE 5730: Digital CMOS VLSI Design 2 Introduction to Digital Circuits CSCE 5730: Digital CMOS VLSI Design 3 What is a digital Computer ? A fast electronic machine that accepts digitized input information, processes it according to a list of internally stored instruction, and produces the resulting output information. List of instructions Æ Computer program Internal storage Æ Memory CSCE 5730: Digital CMOS VLSI Design 4 Different Types and Forms of Computer • Personal Computers (Desktop PCs) • Notebook computers (Laptop computers) • Handheld PCs • Pocket PCs • Workstations (SGI, HP, IBM, SUN) • ATM (Embedded systems) • Supercomputers CSCE 5730: Digital CMOS VLSI Design 5 Five classic components of a Computer Computer Processor Memory Devices Control Input Datapath Output (1) Input, (2) Output, (3) Datapath, (4) Controller, and (5) Memory CSCE 5730: Digital CMOS VLSI Design 6 What is a microprocessor ? • A microprocessor is an integrated circuit (IC) built on a tiny piece of silicon. It contains thousands, or even millions, of transistors, which are interconnected via superfine traces of aluminum. The transistors work together to store and manipulate data so that the microprocessor can perform a wide variety of useful functions. -
Digital Logic and Design (Course Code: EE222) Ltlecture 6: Lliogic Famili Es
Indian Institute of Technology Jodhpur, Year 2018‐2019 Digital Logic and Design (Course Code: EE222) LtLecture 6: LiLogic Fam ilies Course Instructor: Shree Prakash Tiwari EilEmail: sptiwari@iitj .ac.i n Webpage: http://home.iitj.ac.in/~sptiwari/ Course related documents will be uploaded on http://home.iitj.ac.in/~sptiwari/DLD/ Note: The information provided in the slides are taken form text books Digital Electronics (including Mano & Ciletti), and various other resources from internet, for teaching/academic use only 1 Overview •Early families (DL, RTL) • TTL •Evolution of TTL family • CMOS family and its evolution 2 Logic families Diode Logic (DL) •simpp;lest; does not scale •NOT not possible (need = an active element) Resistor-Transistor Logic (RTL) • replace diode switch with a tittransistor switc h •can be cascaded = • large power draw 3 Logic families Diode-Transistor Logic (DTL) • essentially diode logic with transistor amplification • reduced power consumption •faster than RTL = DL AND gate Saturating inverter 4 Logic Families • The bipolar transistor as a logical switch TTL Bipolar Transistor-Transistor Logic (TTL) •First introduced by in 1964 (Texas Instruments) •TTL has shaped digital technology in many ways • Standard TTL family (e.g. 7400) is obsolete •Newer TTL families used (e.g. 74ALS00) 6 TTL Bipolar Transistor-Transistor Logic (TTL) Distinct features •Multi‐emitter transistors 7 TTL A Standard TTL NAND gate 8 TTL A standard TTL NAND gate with open collector output 9 TTL evolution Schottky series (74LS00) TTL •A major -
Chapter6-6.Pdf
MEMS1082 Chapter 6 Digital Circuit 6-6 Department of Mechanical Engineering TTL and CMOS ICs , TTL and CMOS output circuit totem pole configuration When the upper transistor is forward biased and the bottom When input is high, the p- transistor is off, the output is type transistor (top) is off, high. The resistor, transistor, n-type is on. So the and diode drop the actual output is pulled low. The output voltage to a value device sinks current typically about 3.4 V. When the lower transistor is forward When input is low, the n- biased and the top transistor is type transistor (bottom) is off, the output is low. off, p-type is on. So the The TTL device sources current output is pulled high. The when there is a high output and device sources current. sinks current when the output is low. TTL device dissipates power continuously regardless of whether the output is high or low. Department of Mechanical Engineering The MOSFET and MOSFET switching states There are presently two general types of MOSFETs: depletion and enhancement. MOS digital ICs use enhancement MOSFETs exclusively The direction of the arrow indicates either P- or N-channel. The symbols show a broken line between the source and drain to indicate that there is normally no conducting channel between these electrodes. Symbol also shows a separation between the gate and the other terminals to indicate the very high resistance (typically around 1012 Ω ) between the gate and channel. Department of Mechanical Engineering The MOSFET and MOSFET switching states Department of Mechanical Engineering N-MOS Inverter Department of Mechanical Engineering N-MOS NAND Gate Department of Mechanical Engineering N-MOS NOR Gate Department of Mechanical Engineering CMOS Logic The complementary MOS (CMOS) logic family uses both P- and N- channel MOSFETs in the same circuit to realize several advantages over the P-MOS and N- MOS families. -
Class 08: NMOS, Pseudo-NMOS
Class 08: NMOS, Pseudo-NMOS Topics: •02 NMOS Logic Gates •03 NMOS Logic Gates •04 Pseudo-NMOS •05 Pseudo-NMOS •06 Transistor Equivalency Dr. Joseph Elias; Dr. Andrew Mason 1 Class 08: NMOS, Pseudo-NMOS NMOS (Martin c. 1) § nMOS Inverter with resistive load § nMOS Inverter with depletion load Depletion nMOS, Vtn < 0 always ON for VGS = 0 § switch level model W/L Q1 > W/L Q2 so Q1 can “pull down” Vout § nMOS NOR gate c = a+b (a) NMOS off (b) NMOS on want to realize resistor with a transistor § nMOS NAND gate § Including transistor resistance c = ab rds º channel resistance RL >> rds so output close to 0V Dr. Joseph Elias; Dr. Andrew Mason 2 Class 08: NMOS, Pseudo-NMOS NMOS (Martin c. 1) • General nMOS schematic Examples: depletion-load nMOS logic – single load transistor – parallel and series nMOS transistor to complete the compliment of the desired function i.e., they determine when the output is low “0” rather than high “1” Dr. Joseph Elias; Dr. Andrew Mason 3 Class 08: NMOS, Pseudo-NMOS Pseudo-NMOS (Martin c. 4) •NMOS Common-Source Amplifier with •Pseudo-NMOS inverter with PMOS load current sourrce load and load capacitor •Choose W/L so that: •Choose Vbias in between VDD and ground Q2 always on since |Vgs| > |Vtp| Q2 in saturation if (for VDD=3.3) |Vds| > |Veff| > |Vgs| – |Vt| VDD – Vout > |Vgs| - |Vt| Vout < VDD - |Vgs| + |Vt| Vout < 1.65 + Vt < 2.45 Q1 in saturation if Vgs = Vin > Vt Vds > Veff > Vgs – Vt => •Current-source realized with a PMOS transistor Vout > Vin - Vt •Power Dissipation: Veff = Vgs - Vt output low (Vin is high): P = IL * VDD Vds = Vgs + Vdg at saturation, Vdg=-Vt output high (Vin is low): P = 0 Valid if: average static dissipation: P = ½ * IL * VDD Veff = |Vds-sat| > |Vgs| - |Vtp| -want drain at least Vt from gate Dr. -
Comparative Analysis of Low Power Adiabatic Logic Circuits in DSM Technology
International Journal of Engineering Trends and Technology (IJETT) – Volume-45 Number3 -March 2017 Comparative Analysis of Low Power Adiabatic Logic Circuits in DSM Technology Shaefali Dixit #1, Ashish Raghuwanshi #2, # PG Student [VLSI], Dept. of ECE, IES college of Eng. Bhopal, RGPV Bhopal, M.P. India Abstract— With the continuous scaling down of dissipation energy loss takes place. While in technology, in the field of integrated circuit design, semiconductor devices, the charge transfer between low power dissipation has become one of the primary different nodes is the process of energy exchange and focus of the research. With the increasing demand for different techniques can be used for minimizing this low power devices adiabatic logic gates proves to be energy loss due to charge transfer. While fully an effective solution. This paper investigates different adiabatic operation is the ideal condition of a circuit adiabatic logic families such as ECRL, 2N-2N2P and operation, in practical cases partial adiabatic operation PFAL. The main aim of this paper is to simulate of circuit is used which gives considerable various logic gates using conventional CMOS and performance. different adiabatic logic families, and thus compare In conventional CMOS circuits the energy stored in for the effectiveness in terms of lower power load capacitors was dissipated to ground. While, dissipation. All simulations are carried out using adiabatic logic, in contrast, offers a way to reuse this HSPICE at 65nm technology with supply voltage is 1V energy and thus prevents the wastage of this energy. at 100MHz frequency, for fair comparison of results By adding the ideas of both the conventional and the W/L ratio of all the circuit is same. -
VLSI Overview
Lecture 1: VLSI Overview Digital CMOS VLSI Design Instructor: Saraju P. Mohanty, Ph. D. NOTE: The figures, text etc included in slides are borrowed from various books, websites, authors pages, and other sources for academic purpose only. The instructor does not claim any origgyinality. Digital CMOS VLSI Design 1 Lecture Outline • Historical development of computers • ItIntro duc tion toabibasic dig ita l computer • Five classic components of a computer • Microprocessor • IC design abstraction level • Processor Trend • DlDevelopmen tltal tdtrendsof ICs • Moore’s Law Digital CMOS VLSI Design 2 Introduction to Digital Circuits Digital CMOS VLSI Design 3 What is a digital Computer ? A fast electronic machine that accepts digitized input information, processes it according to a list of internally stored instruction, and produces the resulting output information. List of instructions Computer program Internal storage Memory Digital CMOS VLSI Design 4 Different Types and Forms of Computer • Personal Computers (Desktop PCs) • Notebook computers (Laptop computers) • Handheld PCs • Pocket PCs • WkttiWorkstations (SGI, HP, IBM, SUN) • ATM (Embedded systems) • Supercomputers Digital CMOS VLSI Design 5 Five classic components of a Computer Computer Processor Memory Devices Control Input Datapath Output (1) Input, (2) Output, (3) Datapath, (4) Controller, and (5) Memory Digital CMOS VLSI Design 6 What is a microprocessor ? • A microprocessor is an integrated circuit (IC) built on a tiny piece of silicon. It contains thousands, or even millions, of transistors, which are interconnected via superfine traces of aluminum. The transistors work together to store and manipulate data so that the microprocessor can perform a wide variety of useful functions. The particular functions a microprocessor performs are dictated by software. -
Logic Families/Objectives
Logic Families/Objectives – Digital Logic Voltage and Current Parameters • Fan-out, Noise Margin, Propagation Delay – TTL Logic Family – Supply current spikes and ground bounce – TTL Logic Family Evolution –ECL – CMOS Logic Families and Evolution – Logic Family Overview 29/09/2005 EE6471 (KR) 121 Logic Families/Level of Integration – SSI <12 gates/chip Level of integration ever increasing, because of – MSI 12..99 gates/chip •cost •speed – LSI ..1000 gates/chip •size •power – VLSI …10k gates/chip •reliability – ULSI …100k gates/chip Limits of integration: – GSI …1Meg gates/chip •packaging •power dissipation •inductive and capacitive components Note: Ratio gate count/transistor count •flexibility is roughly 1/10 •critical quantity 29/09/2005 EE6471 (KR) 122 Logic Families/Level of Integration – Remember: Gordon Moore, 1975. Predictions: • Mosfet device dimensions scale down by a factor of 2 every 3 years • #transistors/chip double every 1-2 years. Source: G. Sery, Intel 29/09/2005 EE6471 (KR) 123 Logic Families/Static VI Parameters Vcc Vcc Vcc Ioh Iih Iol Iil Voh Vih Vol Vil Parameter Comment Voh(min) High-Level Output Voltage. The minimum voltage level at a logic circuit output in the logical 1 state under defined load conditions. Vol(max) Low-Level Output Voltage. The maximum voltage level at a logic circuit output in the logical 0 state under defined load conditions. 29/09/2005 EE6471 (KR) 124 Logic Families/Static VI Parameters Vcc Vcc Vcc Ioh Iih Iol Iil Voh Vih Vol Vil Parameter Comment Vih(min) High-Level Input Voltage. The minimum voltage level required for a logical 1 at an input.