Handbook of Chemical Vapor Deposition (Cvd)
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5Th FORUM on NEW MATERIALS
TABLE OF CONTENTS 5th FORUM ON NEW MATERIALS OPENING SESSION ................................................................................ 11 Symposium FA - ADVANCED FOSSIL FUEL ENERGY TECHNOLOGIES: THE MATERIALS DEMAND Oral Presentations Session FA-1 - Fossil Fuel Combustion FA-1.1 Improved or New Materials ................................................................................ 13 FA-1.2 Membranes for O2 Separation and Adsorbents for CO2 Capture ................................................................................ 14 FA-1.3 Thermal and Protective Coatings ................................................................................ 15 FA-1.4 Long-term Creep and Fatigue ................................................................................ 16 FA-1.5 Corrosion and Erosion ................................................................................ 16 Session FA-2 - Gasification and Gas Clean-up FA-2.1 Catalysts for Water-gas Shift and for Fuel Production ................................................................................ 17 FA-2.2 Membranes for H2 Separation and CO2-selective Membranes ................................................................................ 18 FA-2.3 High Temperature Seals ................................................................................ 19 Poster Presentations ................................................................................ 19 Symposium FB - MATERIALS AND PROCESS INNOVATIONS IN HYDROGEN PRODUCTION AND STORAGE Oral Presentations -
Bandgap Engineering of Titanium Based Oxynitride Thin Films and Molybdenum Disulfide Thin Films for Photovoltaic Applications
FROESCHLE, MICHAEL R., M.S. Bandgap Engineering of Titanium Based Oxynitride Thin Films and Molybdenum Disulfide Thin Films for Photovoltaic Applications. (2019) Directed by Dr. Hemali P. Rathnayake. 70 pp. The purpose of this project was to investigate the potential of two different material systems for the improvement of solar cell efficiency; one based on a titanium oxynitride system and the other molybdenum disulfide. Both phases of the project utilized different fabrication methods and approach in designing the photovoltaic devices. For the titanium based system (TiNO), thin films were formed using pulsed laser deposition, a phase vapor deposition (PVD) technique. The photovoltaic cells deposited on ITO coated glass with copper electrodes yielded an average power conversion efficiency (PCE) of 4.47%, with a fill factor (FF) of 0.246, open circuit 2 voltage (Voc) of 0.18 V, and a short circuit current density (Jsc) of 58.43 mA/cm . XRD and XPS results provide insight into the materials composition and give evidence of multiple bandgap mediated transfer of charge carriers. For the molybdenum based device, monolayer molybdenum disulfide was incorporated into a current organic-based solar cell (OSC) as an electron transport layer. The active layer consists of a blend of donor Poly(3-hexylthiophene-2,5- diyl) and acceptor PCBM. MoS2 incorporated devices showed improved PCE, at 0.88% compared to that of the control samples which yielded a PCE of 0.22%. BANDGAP ENGINEERING OF TITANIUM BASED OXYNITRIDE THIN FILMS AND MOLYBDENUM DISULFIDE THIN FILMS FOR PHOTOVOLTAIC APPLICATIONS by Michael R. Froeschle A Thesis Submitted to the Faculty of The Graduate School at The University of North Carolina at Greensboro in Partial Fulfillment of the Requirements for the Degree Master of Science Greensboro 2019 Approved by _______________________________ Committee Chair APPROVAL PAGE This thesis written by Michael R. -
FY 1999 Budget Summary for DOE Materials Activities
me~~~~~dlP'go re ~n bs 811~~ ~~~ !Brl ~(~~ A1 Ag8 semi A S~~~~~~~~~I ~S~Zrrl rTi iiT~l·E )r~P~t ~ - li~ S..TTTT~~~~~~~TTTTTTT~ 0 0lT~ Table of Contents TABLE OF CONTENTS Pane Introduction ........... ... .......................................... .. ........ ..... ........ ... Membership List .................................... ............................ ... 3 Organization of the Report ...................................... .................. FY 1999 Budget Summary for DOE Materials Activities ......... ........................... .... 7 Distribution of Funds by Office ..................................................... 9 PROGRAM DESCRIPTIONS OFFICE OF ENERGY EFFICIENCY AND RENEWABLE ENERGY ...................................... 10 Office of Building Technology, State and Community Programs ....................................... 12 Office of Building Systems .............................................................. 13 OFFICE OF INDUSTRIAL TECHNOLOGIES .............. ...................................... 15 Office of Industrial Strategies ........................ .... .......................... 19 Aluminum Vision Team ....................... .................................. 19 Forest Products Vision Team .......................................................... 25 Steel Vision Team ................................................. ................ 25 Glass Vision Team ............................................................ 25 Metal Casting Vision Team ................... ............................... 2........26 Mining -
P020190719572604117959.Pdf
Springer Series in advanced microelectronics 27 Springer Series in advanced microelectronics Series Editors: K. Itoh T. Lee T. Sakurai W.M.C. Sansen D. Schmitt-Landsiedel The Springer Series in Advanced Microelectronics provides systematic information on all the topics relevant for the design, processing, and manufacturing of microelectronic devices. The books, each prepared by leading researchers or engineers in their fields, cover the basic and advanced aspects of topics such as wafer processing, materials, device design, device technologies, circuit design, VLSI implementation, and subsys- tem technology. The series forms a bridge between physics and engineering and the volumes will appeal to practicing engineers as well as research scientists. 18 Microcontrollers in Practice By I. Susnea and M. Mitescu 19 Gettering Defects in Semiconductors By V.A. Perevoschikov and V.D. Skoupov 20 Low Power VCO Design in CMOS By M. Tiebout 21 Continuous-Time Sigma-Delta A/D Conversion Fundamentals, Performance Limits and Robust Implementations By M. Ortmanns and F. Gerfers 22 Detection and Signal Processing Technical Realization By W.J. Witteman 23 Highly Sensitive Optical Receivers By K. Schneider and H.K. Zimmermann 24 Bonding in Microsystem Technology By J.A. Dziuban 25 Power Management of Digital Circuits in Deep Sub-Micron CMOS Technologies By S. Henzler 26 High-Dynamic-Range (HDR) Vision Microelectronics, Image Processing, Computer Graphics Editor: B. Hoefflinger 27 Advanced Gate Stacks for High-Mobility Semiconductors Editors: A. Dimoulas, E. Gusev, P.C. McIntyre, and M. Heyns Volumes 1–17 are listed at the end of the book. A. Dimoulas E. Gusev P.C. McIntyre M. -
Thin Film Metallization and Protective Top-Coat Development
University of Windsor Scholarship at UWindsor Electronic Theses and Dissertations 2011 Thin iF lm Metallization and Protective Top-Coat Development Jack Bekou University of Windsor Follow this and additional works at: http://scholar.uwindsor.ca/etd Recommended Citation Bekou, Jack, "Thin iF lm Metallization and Protective Top-Coat Development" (2011). Electronic Theses and Dissertations. Paper 174. This online database contains the full-text of PhD dissertations and Masters’ theses of University of Windsor students from 1954 forward. These documents are made available for personal study and research purposes only, in accordance with the Canadian Copyright Act and the Creative Commons license—CC BY-NC-ND (Attribution, Non-Commercial, No Derivative Works). Under this license, works must always be attributed to the copyright holder (original author), cannot be used for any commercial purposes, and may not be altered. Any other use would require the permission of the copyright holder. Students may inquire about withdrawing their dissertation and/or thesis from this database. For additional inquiries, please contact the repository administrator via email ([email protected]) or by telephone at 519-253-3000ext. 3208. Thin Film Metallization and Protective Top-Coat Development By Jack Bekou A Thesis Submitted to the Faculty of Graduate Studies Through the Department of Mechanical, Automotive and Materials Engineering In Partial Fulfillment of the Requirements for the Degree of Master of Applied Science at the University of Windsor Windsor, Ontario, Canada 2011 © 2011 Jack Bekou Thin Film Metallization and Protective Top-Coat Development By Jack Bekou APPROVED BY: ____________________________________________ Dr. Xueyuan Nie, Program Reader, Department of Mechanical, Automotive & Materials Engineering ____________________________________________ Dr. -
Reactive Sputtering of Complex Multi-Component Nitride Thin Films
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology 1852 Reactive Sputtering of Complex Multi-component Nitride Thin Films KRISTINA VON FIEANDT ACTA UNIVERSITATIS UPSALIENSIS ISSN 1651-6214 ISBN 978-91-513-0744-2 UPPSALA urn:nbn:se:uu:diva-392704 2019 Dissertation presented at Uppsala University to be publicly examined in Polhemssalen, Ångströmslaboratoriet, Lägerhyddsvägen 1, Uppsala, Friday, 25 October 2019 at 09:15 for the degree of Doctor of Philosophy. The examination will be conducted in English. Faculty examiner: Professor Jean-Francois Pierson (University of Lorraine). Abstract von Fieandt, K. 2019. Reactive Sputtering of Complex Multi-component Nitride Thin Films. Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology 1852. 71 pp. Uppsala: Acta Universitatis Upsaliensis. ISBN 978-91-513-0744-2. The ever-increasing demand on improvement of protective nitride thin films has led to an expansion of the research field into multi-element based materials. The work in this thesis has focused on exploring new complex, multi-component nitride thin films based on three different material systems: Al-Ge-N, Hf-Nb-Ti-V-Zr-N and Al-Cr-Nb-Y-Zr-N. All films were synthesised by reactive dc magnetron sputtering and characterised with regard to structure and material properties, in particular the mechanical, optical and corrosion properties. The Al-Ge-O-N coatings exhibited amorphisation of the structure upon oxygen addition, via the formation of a crystalline (Al1-xGex)(N1-yOy) solid solution phase for low O contents. The mechanical properties were improved, and hardness values up to 29 GPa were achieved for low O and Ge concentrations, most likely due to nanocomposite hardening. -
The Disilicides of Tungsten, Molybdenum, Tantalum, Titanium, Cobalt, and Nickel, and Platinum Monosilicide: a Survey of Their Thermodynamic Properties
The Disilicides of Tungsten, Molybdenum, Tantalum, Titanium, Cobalt, and Nickel, and Platinum Monosilicide: A Survey of Their Thermodynamic Properties Cite as: Journal of Physical and Chemical Reference Data 22, 1459 (1993); https:// doi.org/10.1063/1.555922 Submitted: 21 December 1992 . Published Online: 15 October 2009 M. S. Chandrasekharaiah, J. L. Margrave, and P. A. G. O’Hare ARTICLES YOU MAY BE INTERESTED IN Thermodynamic considerations in refractory metal-silicon-oxygen systems Journal of Applied Physics 56, 147 (1984); https://doi.org/10.1063/1.333738 Thermal and Electrical Conductivity of Graphite and Carbon at Low Temperatures Journal of Applied Physics 15, 452 (1944); https://doi.org/10.1063/1.1707454 Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds Journal of Applied Physics 55, 4208 (1984); https://doi.org/10.1063/1.333021 Journal of Physical and Chemical Reference Data 22, 1459 (1993); https://doi.org/10.1063/1.555922 22, 1459 © 1993 American Institute of Physics for the National Institute of Standards and Technology. The Disilicides of Tungsten, Molybdenum, Tantalum, Titanium, Cobalt, and Nickel, and Platinum Monosilicide: A Survey of Their Thermodynamic Properties M. s. Chandrasekharaiah and J. L. Margrave HARC, Materials Science Research Center, 4802 Research Forest Drive, The Woodlands, TX 77381 and P. A. G. O'Hare Chemical Kinetics and Thennodynamics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899-0001 Received December 21, 1992; revised manuscript received February 19, 1993 A critical evaluation is presented of the thermodynamic properties of six disiIi cides and one monosilicide that are important in the manutacture ot very large scale integrated circuits. -
Ternary Nitride Materials: Fundamentals and Emerging Device Applications Arxiv:2010.08058V1 [Cond-Mat.Mtrl-Sci] 15 Oct 2020
Ternary Nitride Materials: Fundamentals and Emerging Device Applications Ann L. Greenaway,1 Celeste L. Melamed,2;1 M. Brooks Tellekamp,1 Rachel Woods-Robinson,3;4;1 Eric S. Toberer,2 James R. Neilson5 and Adele C. Tamboli1* 1Materials and Chemistry Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado, United States, 80401 email: [email protected] 2Department of Physics, Colorado School of Mines, Golden, Colorado, United States, 80401 3Applied Science and Technology Graduate Group, University of California at Berkeley, Berkeley, California, United States, 97402 4Energy Technologies Area, Lawrence Berkeley National Laboratory, Berkeley, California, United States, 94720 5Department of Chemistry, Colorado State University, Fort Collins, Colorado, United States, 80523 Keywords ternary nitride, structural chemistry, metastability, nitride synthesis, optoelectronics, battery Abstract Interest in inorganic ternary nitride materials has grown rapidly over the past few decades, as their diversity of chemistries and structures make them appealing for a variety of applications. Due to synthetic challenges posed by the stability of N2, the number of predicted ni- tride compounds dwarfs those that have been synthesized, offering a breadth of opportunity for exploration. This review summarizes the fundamental properties and structural chemistry of ternary nitrides, leveraging metastability and the impact of nitrogen chemical potential. A discussion of prevalent defects, both detrimental and beneficial, is followed by a survey of synthesis techniques and their interplay with arXiv:2010.08058v1 [cond-mat.mtrl-sci] 15 Oct 2020 metastability. Throughout the review, we highlight applications (such as solid-state lighting, electrochemical energy storage, and electronic devices) in which ternary nitrides show particular promise. 1 Contents 1. -
Characterization of Iii-Nitride Thin Films
ABSTRACT PARK, JI-SOO. Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes. (Under the direction of Professor Robert F. Davis) AlGaN-based thin film heterostructures have been grown and fabricated into ultraviolet light emitting diodes with and without p-type and/or n-type AlGaN carrier- blocking layers at the top and the bottom of the quantum wells, respectively, and having the principal emission at 353 nm. The highest values of this peak intensity and light output power were measured in the devices containing p-type carrier-blocking layers. Growth of an n-type carrier-blocking layer had an adverse effect on these device characteristics. A broad peak centered at ~540nm exhibited yellow luminescence and was present in the spectra acquired from all the devices. This peak is attributed to absorption of the ultraviolet emission by and re-emission from the p-GaN and/or to the luminescence from the AlGaN within quantum wells by current injection. Individual AlxGa1-xN films (x<0≤1) have been grown on Si- and C-terminated 6H-SiC{0001} substrates and characterized for electron emission applications. The large range in the values of x was achieved by changing the fraction of Al in the gas phase from 0 to 0.45. The ionized donor concentration in the n-type, Si-doped AlxGa1-xN films decreased as the mole fraction of Al was increased due to the reduction in the donor energy level and compensation. The use of the SiH4 flow rate, which yields a Si concentration of ~1 x 1019 cm-3 in GaN, established the upper limit of the mole fraction of Al wherein n-type doping could be achieved at ~0.61. -
Njit-Etd2000-029
Copyright Warning & Restrictions The copyright law of the United States (Title 17, United States Code) governs the making of photocopies or other reproductions of copyrighted material. Under certain conditions specified in the law, libraries and archives are authorized to furnish a photocopy or other reproduction. One of these specified conditions is that the photocopy or reproduction is not to be “used for any purpose other than private study, scholarship, or research.” If a, user makes a request for, or later uses, a photocopy or reproduction for purposes in excess of “fair use” that user may be liable for copyright infringement, This institution reserves the right to refuse to accept a copying order if, in its judgment, fulfillment of the order would involve violation of copyright law. Please Note: The author retains the copyright while the New Jersey Institute of Technology reserves the right to distribute this thesis or dissertation Printing note: If you do not wish to print this page, then select “Pages from: first page # to: last page #” on the print dialog screen The Van Houten library has removed some of the personal information and all signatures from the approval page and biographical sketches of theses and dissertations in order to protect the identity of NJIT graduates and faculty. ABSTRACT SYNTHESIS AND CHARACTERIZATION OF LOW PRESSURE CHEMICALLY VAPOR DEPOSITED BORON NITRIDE AND TITANIUM NITRIDE FILMS by Narahari Ramanuj a This study has investigated the interrelationships governing the growth kinetics, resulting compositions, and properties of boron nitride (B-C-N-H) and titanium nitride (Ti-N-CI) films synthesized by low pressure chemical vapor deposition (LPCVD) using ammonia (NH3)/triethylamine-borane and NH 3/titanium tetrachloride as reactants, respectively. -
1.3.2 MOS Capacitor Phase Shifter
SILICON ELECTRO-OPTIC MODULATOR Fengqiao Dong A Thesis Submitted for the Degree of MPhil at the University of St. Andrews 2011 Full metadata for this item is available in Research@StAndrews:FullText at: http://research-repository.st-andrews.ac.uk/ Please use this identifier to cite or link to this item: http://hdl.handle.net/10023/2532 This item is protected by original copyright Silicon Electro-optic Modulator Fengqiao Dong This thesis is submitted in partial fulfilment for the degree of MPhil at the University of St Andrews September 2011 For my parents i 1. Candidate’s declarations: I, Fengqiao Dong, hereby certify that this thesis, which is approximately 19 000 words in length, has been written by me, that it is the record of work carried out by me and that it has not been submitted in any previous application for a higher degree. I was admitted as a research student in September, 2007 and as a candidate for the degree of MPhil in September, 2007; the higher study for which this is a record was carried out in the University of St Andrews between 2007 and 2011. Date ………… signature of candidate ……… 2. Supervisor’s declaration: I hereby certify that the candidate has fulfilled the conditions of the Resolution and Regulations appropriate for the degree of MPhil in the University of St Andrews and that the candidate is qualified to submit this thesis in application for that degree. Date ………… signature of supervisor ……… 3. Permission for electronic publication: In submitting this thesis to the University of St Andrews I understand that I am giving permission for it to be made available for use in accordance with the regulations of the University Library for the time being in force, subject to any copyright vested in the work not being affected thereby. -
Formation of Highly Electrically Conductive Surface-Silvered Polyimide Films Under Exceptionally Mild Conditions
W&M ScholarWorks Undergraduate Honors Theses Theses, Dissertations, & Master Projects 5-2010 Formation of Highly Electrically Conductive Surface-Silvered Polyimide Films Under Exceptionally Mild Conditions Tyler Stukenbroeker College of William and Mary Follow this and additional works at: https://scholarworks.wm.edu/honorstheses Part of the Chemistry Commons Recommended Citation Stukenbroeker, Tyler, "Formation of Highly Electrically Conductive Surface-Silvered Polyimide Films Under Exceptionally Mild Conditions" (2010). Undergraduate Honors Theses. Paper 666. https://scholarworks.wm.edu/honorstheses/666 This Honors Thesis is brought to you for free and open access by the Theses, Dissertations, & Master Projects at W&M ScholarWorks. It has been accepted for inclusion in Undergraduate Honors Theses by an authorized administrator of W&M ScholarWorks. For more information, please contact [email protected]. Formation of Highly Electrically Conductive Surface-Silvered Polyimide Films Under Exceptionally Mild Conditions A thesis submitted in partial fulfillment of the requirement for the degree of Bachelors of Science in Chemistry from The College of William and Mary by Tyler Stukenbroeker Accepted for (Honors, High Honors, Highest Honors) David Thompson, Director Christopher Abelt Gary Rice Clay Clemens Williamsburg, VA May 5, 2010 Table of Contents INTRODUCTION Background of Polyimide Synthesis and Characterization 4 EXPERIMENTAL SECTION Experimental Materials 11 Characterization Techniques and Procedure 15 Room Temperature Metallization