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D MATERIALS SPUTTERING D TARGETS • Manufacturing Processes................................ D 03 • Sputtering Targets ........................................ D 04 • Sputter Yield Guide ....................................... D 17 MATERIALS / INORGANICS & THIN FILMS GUIDE D 01 MATERIALS SPUTTERING TARGETS Manufacturing Processes Most sputtering targets can be fabricated into a wide range of shapes and sizes. There are some technical limitations to the maximum size for a given single piece construction. In such cases, a multi-segmented target can be produced with the individual segments joined together by butt or beveled joints. OUR SPUTTERING TARGETS AT A GLANCE • Pure metal and alloy targets (99% to 99.9999%), industrial application targets: Al, Ni/Cr, Mo, Ta, Ti, Ti/Al, W... • Precious metal targets: Ag, Au, Ir, Pd, Pt, Rh... and alloys on request • Hot pressed oxides and intermetallic targets without binder: Al2O3, AZO, ITO, PZT, SiO2, ZnO... • Circular, rectangular, Delta, ring, tube and any other shape on request • All targets are delivered with a certificate of analysis Neyco offers you specific composition according to your needs on request. Don’t hesitate to ask us ! D 02 MATERIALS / INORGANICS & THIN FILMS GUIDE MATERIALS SPUTTERING TARGETS Manufacturing Processes D Manufacturing Processes Neyco manufactures sputtering targets from a wide variety of compositions in various purity levels, allowing customers to match targets to their specific requirements and needs. We employ a number of different target manufac- turing techniques to yield optimum grain size, density, hardness and compo- sition. The specific manufacturing process depends on the properties of the target material and the end use of the target. Manufacturing techniques used include: • Casting • Ceramic Sintering • Cold and Hot Isostatic Pressing • Extrusion • Hot and Cold Rolling • Inert Gas Hot-Pressing • Plasma Spray • Precision Machining • Vacuum Hot-Pressing • Vacuum Melting MATERIALS / INORGANICS & THIN FILMS GUIDE D 03 MATERIALS SPUTTERING TARGETS ManufacturingSputtering Targets Processes Sputtering Targets Al Sb 13 ALUMINUM Base 51 ANTIMONY Base CHEMICAL* FORMULA PURITY** CHEMICAL* FORMULA PURITY** Aluminum Al 99.99 / 99.999 Antimony Sb 99.5 / 99.999 Aluminum Antimonide AlSb 99.99 Antimony Sulfide Sb2S3 99.99 Aluminum Chromium (95/5) Al-Cr 99.95 Antimony Telluride Sb2Te 3 99.999 Aluminum Copper (99.5/0.5) Al-Cu 99.995 Aluminum Copper (90/10), 99.99 to Al-Cu (92/8), (95/5), (98/2), (99/1) 99.999 Ba Aluminum Copper Silicon Al-Cu-Si 99.999 (98/1/1) 56 BARIUM Base Aluminum Magnesium AlMg 99.995 Aluminum Magnesium Silicon AlMgSi 99.99 CHEMICAL* FORMULA PURITY** Aluminum Neodymium AlNd 99.95 Barium Ba 99.9 BaFe O Aluminum Nickel Boron Barium Ferrite 12 19 99.9 Al-Ni-B 99.99 (95.5/4/0.5 at%) Barium Fluoride BaF2 99.9 / 99.995 BaPbO Aluminum Nickelide Al3Ni 99.9 Barium Lead Oxide 3 99.5 Barium Manganese Oxide BaMnO3 99.9 Aluminum Nitride AlN 99 to 99.9 Barium Oxide BaO 99.95 Aluminum Nitride Titanium Barium Strontium AlN-TiN 99.5 BaSrTiO 99.95 Nitride Titanate, BST 3 BaTiO 99.99 to Barium Titanate 3 99.9 / 99.95 Aluminum Oxide Al O 2 3 99.999 Barium Zirconate BaZrO3 99.99 Aluminum Oxide Tungsten Barium Zirconium Al O -WO 99.99 BaZrTiO 99.9 Oxide (95/5 at%) 2 3 3 Titanate 3 Aluminum Oxide Yttrium Al O -Y O 99.99 Oxide (95/5 at%) 2 3 2 3 Aluminum Silicon Copper AlSiCu 99.95 Aluminum Silicon (98/2), (99/1) Al-Si 99.99 / 99.999 Aluminum Silicon AlSi 99.999 *All alloys are in wt% when not indicated. **All purities indicated in the tables are based on metallic impurities. D 04 MATERIALS / INORGANICS & THIN FILMS GUIDE MATERIALSMATERIALS SPU TT SERINPUTTG ERINTARGGE TARTS G EManufacturingTS Sputtering Processes Targets Bi Cd 83 BISMUTH Base 48 CADMIUM Base CHEMICAL* FORMULA PURITY** CHEMICAL* FORMULA PURITY** 99.9 to 99.9 to Bismuth Bi Cadmium Cd 99.999 99.999 Bismuth Aluminum Oxide BiAlO 99.99 Cadmium Oxide CdO 99.99 3 D Bismuth Antimonide BiSb 99.99 99.99 / Cadmium Selenide CdSe 99.995 Bismuth Antimony BiSbTe 99.999 Telluride Cadmium Stannate Cd2SnO4 99.99 BiCoO Bismuth Cobalt Oxide 3 99.95 99.99 / Cadmium Sulfide CdS 99.999 Bismuth Ferrite BiFeO3 99.99 Bismuth Gallate BiGa2O3 99.99 Cadmium Telluride CdTe 99.999 Bismuth Indium Oxide BiInO3 99.9 Cadmium Tin CdSn 99.99 Bismuth Iron Titanium Bi Fe Ti O 99.9 Oxide 1.02 0.98 0.02 3 Bismuth Manganese Oxide BiMnO 99.95 3 Ca Bismuth Neodymium (Bi Nd )Ti O 99.9 Titanium Oxide, BNdT 3.15 0.85 3 12 20 CALCIUM Base Bismuth Oxide Bi2O3 99.9 to 99.99 Bismuth Samarium Ferrite BiSmFeO3 99.9 CHEMICAL* FORMULA PURITY** Bismuth Selenide Bi2Se3 99.999 99.99 / Calcium Fluoride CaF 2 99.995 Bismuth Silicon Oxide Bi2SiO5 99.99 CaMnO Bismuth Strontium Calcium Calcium Manganate 3 99.95 Bi Sr Ca Cu O 99.9 Copper Oxide, BSCCO (2212) 2 2 1 2 8 Calcium Oxide CaO 99.99 CaTiO Bismuth Strontium Calcium Calcium Titanate 3 99.99 Bi Sr Ca Cu O 99.9 Copper Oxide, BSCCO (2223) 2 2 2 3 10 Bismuth Telluride Bi2Te 3 99.999 Bismuth Telluride Selenide BiTe Se 99.999 1-x x Ce Bismuth Titanate Bi2Ti4O11 99.9 58 CERIUM Base Bismuth Vanadate BiVO4 99.99 CHEMICAL* FORMULA PURITY** Cerium Ce 99.9 / 99.95 B CeF Cerium Fluoride 3 99.9 5 BORON Base Cerium Gadolinium CeGd 99.95 Cerium Oxide CeO2 99.9 CHEMICAL* FORMULA PURITY** 99.9 to Boron B 99.999 Boron Carbide B4C 99.5 / 99.9 Boron Nitride BN 97.5 to 99.9 *All alloys are in wt% when not indicated. **All purities indicated in the tables are based on metallic impurities. MATERIALS / INORGANICS & THIN FILMS GUIDE D 05 MATERIALS SPUTTERING TARGETS ManufacturingSputtering Targets Processes Cs Co 55 CESIUM Base 27 COBALT Base CHEMICAL* FORMULA PURITY** CHEMICAL* FORMULA PURITY** Cesium Iodide CsI 99.99 / 99.999 Cobalt Co 99.8 to 99.99 Cobalt Boride Co2B 99.9 Cobalt Chromium CoCrAl 99.95 Cr Aluminum 24 CHROMIUM Base Cobalt Chromium Iron CoCrFeAl 99.9 Aluminum CHEMICAL* FORMULA PURITY** Cobalt Chromium Oxide CoCr2O4 99.9 Cobalt Gadolinium CoGd 99.95 Chromium Cr 99.8 to 99.99 Cobalt Iron CoFe 99.95 Chromium Aluminide CrAl 99.99 Cobalt Iron (50/50), Chromium Boride CrB2 99.5 (60/40), (70/30), (84/16), Co-Fe 99.9 / 99.95 (90/10) Chromium Carbide Cr3C2 99.5 / 99.95 Chromium Diboride CrB2 99.5 Cobalt Iron Boron CoFeB 99.95 Cr N Chromium Nitride 2 99.5 Cobalt Oxide Co3O4 99.95 Cobalt Oxide CoO 99.95 Chromium Oxide Cr2O3 99.8 to 99.95 Cobalt Silicide CoSi2 99.5 Chromium Silicide CrSi2 99.5 / 99.9 Cobalt Silicon CoSi 99.95 Chromium Silicide Cr3Si 99.5 Chromium Titanium Cr-Ti 99.9 (80/20), (95/5) Chromium Nickel (60/40) Cr-Ni 99.9 Chromium Nickel CrNiAl 99.9 Aluminum Chromium Silicon Cr-SiO 99.5 / 99.9 Monoxide (60/40), (70/30) Chromium Ruthenium CrRu 99.95 *All alloys are in wt% when not indicated. **All purities indicated in the tables are based on metallic impurities. D 06 MATERIALS / INORGANICS & THIN FILMS GUIDE MATERIALSMATERIALS SPU TT SERINPUTTG ERINTARGGE TARTS G EManufacturingTS Sputtering Processes Targets Cu Eu 29 CoPPER Base 63 EUROPIUM Base CHEMICAL* FORMULA PURITY** CHEMICAL* FORMULA PURITY** Copper Cu 99.99 / 99.995 Europium Eu 99.9 Copper Aluminum Oxide CuAl2O3 99.9 Europium Oxide Eu2O3 99.95 Copper Aluminum Oxide CuAlO 99.99 2 D Copper Boron (95/5 at%) Cu-B 99.9 Copper Gallium CuGa 99.99 / 99.995 Copper Germanide CuGe 99.99 Gd 64 Copper Indium CuIn 99.99 GADOLINIUM Base Copper Indium Gallium CuInGa 99.99 Copper Indium Gallium CHEMICAL* FORMULA PURITY** CuInGaSe 99.99 Selenide 2 Gadolinium Gd 99.9 / 99.95 Copper Iron (99/1) Cu-Fe 99.95 Gadolinium Oxide Gd2O3 99.9 Copper Magnesium CuMg 99.99 Copper Nickel CuNi 99.99 Copper Oxide CuO 99.7 / 99.9 Ga Copper Oxide Cu O 99.9 2 31 GALLIUM Base Copper Selenide CuSe 99.99 Copper Selenide Cu2Se 99.5 CHEMICAL* FORMULA PURITY** Copper Sulfide Cu2S 99.95 Copper Sulfide CuS 99.999 Gallium Antimonide GaSb 99.999 Gallium Arsenide GaAs 99.999 Copper Telluride Cu2Te 99.99 Ga O -In O -ZnO Copper Tin (90/10) Cu-Sn 99.99 Gallium Indium Zinc Oxide 2 3 2 3 99.99 Copper Titanium Oxide CuTiO 99.99 Gallium Iron Magnesium 3 GaFeMgO 99.9 Oxide 3 99.995 / Gallium Oxide Ga O 2 3 99.999 Dy Gallium Phosphide GaP 99.999 Ga Se 66 DYSPROSIUM Base Gallium Selenide 2 3 99.99 CHEMICAL* FORMULA PURITY** Dysprosium Dy 99.95 Ge 32 GERMANIUM Base Er CHEMICAL* FORMULA PURITY* 68 ERBIUM Base Germanium Ge 99.999 Germanium Antimonide GeSb 99.999 Germanium Antimony CHEMICAL* FORMULA PURITY** Ge Sb Te 99.999 Telluride, GST 2 3 5 Erbium Er 99.95 Germanium Oxide GeO2 99.99 Erbium Fluoride ErF3 99.99 Germanium Selenide GeSe 99.999 Erbium Oxide Er2O3 99.95 / 99.99 Germanium Telluride GeTe 99.999 *All alloys are in wt% when not indicated. **All purities indicated in the tables are based on metallic impurities. MATERIALS / INORGANICS & THIN FILMS GUIDE D 07 MATERIALS SPUTTERING TARGETS ManufacturingSputtering Targets Processes Au Ho 79 GOLD Base 67 HOLMIUM Base CHEMICAL* FORMULA PURITY** CHEMICAL* FORMULA PURITY** Gold Au 99.95 / 99.999 Holmium Ho 99.95 Gold Boride AuB 99.99 Holmium Manganese HoMnO 99.95 Gold Germanium (88/12) Au-Ge 99.999 Oxide 3 Gold Palladium (60/40) Au-Pd 99.99 Gold Tin (70/30) Au-Sn 99.99 Gold Zinc (92/8) Au-Zn 99.99 In See Section E - Precious Metals in this catalogue about 49 INDIUM Base Presentation and Precious Metal Recycling.
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    Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number C3H8O 1‐propanol C4H7BrO2 2‐bromobutyric acid 80‐58‐0 GeH3COOH 2‐germaacetic acid C4H10 2‐methylpropane 75‐28‐5 C3H8O 2‐propanol 67‐63‐0 C6H10O3 4‐acetylbutyric acid 448671 C4H7BrO2 4‐bromobutyric acid 2623‐87‐2 CH3CHO acetaldehyde CH3CONH2 acetamide C8H9NO2 acetaminophen 103‐90‐2 − C2H3O2 acetate ion − CH3COO acetate ion C2H4O2 acetic acid 64‐19‐7 CH3COOH acetic acid (CH3)2CO acetone CH3COCl acetyl chloride C2H2 acetylene 74‐86‐2 HCCH acetylene C9H8O4 acetylsalicylic acid 50‐78‐2 H2C(CH)CN acrylonitrile C3H7NO2 Ala C3H7NO2 alanine 56‐41‐7 NaAlSi3O3 albite AlSb aluminium antimonide 25152‐52‐7 AlAs aluminium arsenide 22831‐42‐1 AlBO2 aluminium borate 61279‐70‐7 AlBO aluminium boron oxide 12041‐48‐4 AlBr3 aluminium bromide 7727‐15‐3 AlBr3•6H2O aluminium bromide hexahydrate 2149397 AlCl4Cs aluminium caesium tetrachloride 17992‐03‐9 AlCl3 aluminium chloride (anhydrous) 7446‐70‐0 AlCl3•6H2O aluminium chloride hexahydrate 7784‐13‐6 AlClO aluminium chloride oxide 13596‐11‐7 AlB2 aluminium diboride 12041‐50‐8 AlF2 aluminium difluoride 13569‐23‐8 AlF2O aluminium difluoride oxide 38344‐66‐0 AlB12 aluminium dodecaboride 12041‐54‐2 Al2F6 aluminium fluoride 17949‐86‐9 AlF3 aluminium fluoride 7784‐18‐1 Al(CHO2)3 aluminium formate 7360‐53‐4 1 of 75 Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number Al(OH)3 aluminium hydroxide 21645‐51‐2 Al2I6 aluminium iodide 18898‐35‐6 AlI3 aluminium iodide 7784‐23‐8 AlBr aluminium monobromide 22359‐97‐3 AlCl aluminium monochloride
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    S o u p S t a t e M e t a t h e s is P reparations OF H a r d R e f r a c t o r y C e r a m i c s A thesis presented by: Artur Marek Nartowski BSc in partial fulfilment for the award of Ph. D. U n iv e r s it y C o l l e g e Lo n d o n D e p t , o f C h e m is t r y ProQuest Number: 10014877 All rights reserved INFORMATION TO ALL USERS The quality of this reproduction is dependent upon the quality of the copy submitted. In the unlikely event that the author did not send a complete manuscript and there are missing pages, these will be noted. Also, if material had to be removed, a note will indicate the deletion. uest. ProQuest 10014877 Published by ProQuest LLC(2016). Copyright of the Dissertation is held by the Author. All rights reserved. This work is protected against unauthorized copying under Title 17, United States Code. Microform Edition © ProQuest LLC. ProQuest LLC 789 East Eisenhower Parkway P.O. Box 1346 Ann Arbor, Ml 48106-1346 Acknowledgements This work was supported by EPSRC and was completed under very helpfiil and encouraging supervision of Dr. I. P. Parkin. Grateful acknowledgement is due to members of staff, especially Dr. C. Carmalt, Prof. A. J. Craven, Dr. M. MacKenzie and the departmental microanalyst. I am also indebted to my fellow students, in particular, L.
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    CO-TUTELLE THESE DE DOCTORAT DE L'UNIVERSITE DE RENNES 1 OMUE NIVERSITE RETAGNE OIRE C U B L ECOLE DOCTORALE N° 596 Matière Molécules et Matériaux Spécialité : Chimie Inorganique NIKOLAEV INSTITUTE OF INORGANIC CHEMISTRY (NIIC) Novosibirsk, Russia Par Viktoria Muravieva Briques moléculaires à clusters hétérométalliques chalcogénées {Re 6-xMoxSe8} x = 1-3 : cristallochimie, structures electroniques et propriétés redox Thèse présentée et soutenue à Novosibirsk, le 27 novembre 2019 Unité de recherche : Institut des Sciences Chimiques de Rennes – UMR CNRS 6226 Nikolaev Institute of Inorganic Chemistry, Novosibirsk Rapporteurs avant soutenance : Composition du Jury : Emmanuel CADOT Emmanuel CADOT Professeur, Université de Versailles Professeur, Université de Versailles / rapporteur Sylvie FERLAY Vladimir FEDIN Professeur, Université de Strasbourg Professeur, NIIC de Novosibirsk / examinateur Stéphane CORDIER Directeur de recherches CNRS, Université de Rennes 1 / Directeur de thèse Nikolay NAUMOV Professeur, NIIC de Novosibirsk/ Co-directeur de thèse Maxim SOKOLOV Professeur, Novosibirsk State University / examinateur Galina ROMANENKO Researcher, International Tomography Center, Novosibirsk / examinatrice Membres invités: Pierric LEMOINE Chargé de Recherches CNRS, Université de Rennes 1 1 Carmelo PRESTIPINO Chargé de Recherche CNRS, Université de Rennes 1 1 Contents Résumé détaillé de la thèse ................................................................................................ 5 The list of Acronyms .......................................................................................................