Flux Growth of Phosphide and Arsenide Crystals
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Petrology, Mineralogy, and Geochemistry Northern California
Petrology, Mineralogy, and Geochemistry of the Lower Coon Mountain Pluton, Northern California, with Respect to the Di.stribution of Platinum-Group Elements Petrology, Mineralogy, and Geochemistry of the Lower Coon Mountain Pluton, Northern California, with Respect to the Distribution of Platinum-Group Elements By NORMAN J PAGE, FLOYD GRAY, and ANDREW GRISCOM U.S. GEOLOGICAL SURVEY BULLETIN 2014 U.S. DEPARTMENT OF THE INTERIOR BRUCE BABBITT, Secretary U.S. GEOLOGICAL SURVEY Dallas L. Peck, Director Any use of trade, product, or firm names in this publication is for descriptive purposes only and does not imply endorsement by the U.S. Government Text edited by George Havach Illustrations edited by Carol L. Ostergren UNITED STATES GOVERNMENT PRINTING OFFICE, WASHINGTON : 1993 For sale by Book and Open-File Report Sales U.S. Geological Survey Federal Center, Box 25286 Denver, CO 80225 Library of Congress Cataloging in Publication Data Page, Norman J Petrology, mineralogy, and geochemistry of the Lower Coon Mountain pluton, northern California, with respect to the distribution of platinum-group elements I by Norman J Page, Floyd Gray, and Andrew Griscom. p. em.- (U.S. Geological Survey bulletin ; 2014) Includes bibliographical references. 1. Rocks, Igneous-California-Del Norte County. 2. Geochemistry California-Del Norte County. I. Gray, Floyd. II. Griscom, Andrew. Ill. Title. IV. Series. QE75.89 no. 2014 [QE461] 557.3 s-dc20 92-27975 [552'.3'0979411] CIP CONTENTS Abstract 1 Introduction 2 Regional geologic setting 2 Geology 2 Shape, size, -
Single Crystal Growth for Topology and Beyond Chandra Shekhar#, Horst Borrmann, Claudia Felser, Guido Kreiner, Kaustuv Manna, Marcus Schmidt, and Vicky Sü
CHEMICAL METALS SCIENCE & SOLID STATE CHEMISTRY Single crystal growth for topology and beyond Chandra Shekhar#, Horst Borrmann, Claudia Felser, Guido Kreiner, Kaustuv Manna, Marcus Schmidt, and Vicky Sü Single crystals are the pillars for many technological advancements, which begin with acquiring the material. Since different compounds have different physical and chemical properties, different techniques are needed to obtain their single crystals. New classes of quantum materials, from insulators to semimetals, that exhibit non-trivial topologies, have been found. They display a plethora of novel phenomena, including topological surface states, new fermions such as Weyl, Dirac, or Majorana, and non-collinear spin textures such as antiskyrmions. To obtain the crystals and explore the properties of these families of compounds, it is necessary to employ different crystal growth techniques such as the chemical vapour transport method, Bridgman technique, flux growth method, and floating-zone method. For the last four years, we have grown more than 150 compounds in single crystal form by employing these methods. We sometimes go beyond these techniques if the phase diagram of a particular material allows it; e.g., we choose the Bridgman technique as a flux growth method. Before measuring the properties, we fully characterize the grown crystals using different characterization tools. Our TaAs family of crystals have, for the first time, been proven experimentally to exhibit Weyl semimetal properties. They exhibit extremely high magnetoresistance and mobility of charge carriers, which is indicative of the Weyl fermion properties. Moreover, a very large value of intrinsic anomalous Hall and Weyl physics with broken time-reversal symmetry is found in the full-Heuslers, while the half-Heuslers exhibit topological surface states. -
Where Do New Materials Come From? Neither the Stork Nor the Birds and the Bees! in Search of the Next “First Material” Gregory Morrison, Dileka Abeysinghe, Justin B
2016 Governor’s Award for Excellence in Science Where Do New Materials Come From? Neither the Stork nor the Birds and the Bees! In Search of the Next “First Material” Gregory Morrison, Dileka Abeysinghe, Justin B. Felder, Shani Egodawatte, Timothy Ferreira, Hans-Conrad zur Loye* Department of Chemistry and Biochemistry, University of South Carolina, Columbia, South Carolina 29208, USA Materials discovery and optimization has driven the rapid technological advancements that have been observed in our lifetimes. For this advancement to continue, solid-state chemists must continue to develop new materials. Where do these new materials come from? In this review, we discuss the approaches used by the zur Loye group to discover the next “First Material”, a new material exhibiting a desired or not previously observed property that can be optimized for use in the technologies of tomorrow. Specifically, we discuss several crystal growth techniques that we have used with great success to synthesize new materials: the flux growth method, the hydroflux method, and the mild-hydrothermal method. materials, the ever-shrinking cell phone due to improved INTRODUCTION microwave dielectric materials, the enhancement in lithium battery storage capacity due to new intercalation materials, and the improved capacitor due to new ferroelectric materials are all In our complex lives of the 21st Century we rely on technology and excellent examples of materials that were developed only recently. technological devices that work because they contain advanced We should not for one second believe, however, that these materials that exhibit specific properties to perform specific materials were discovered and used without further optimization, functions. -
Crystallization Processes and Solubility of Columbite-(Mn), Tantalite-(Mn), Microlite, Pyrochlore, Wodginite and Titanowodginite in Highly Fluxed Haplogranitic Melts
Western University Scholarship@Western Scholarship@Western Electronic Thesis and Dissertation Repository 3-12-2018 10:30 AM Crystallization processes and solubility of columbite-(Mn), tantalite-(Mn), microlite, pyrochlore, wodginite and titanowodginite in highly fluxed haplogranitic melts Alysha G. McNeil The University of Western Ontario Supervisor Linnen, Robert L. The University of Western Ontario Co-Supervisor Flemming, Roberta L. The University of Western Ontario Graduate Program in Geology A thesis submitted in partial fulfillment of the equirr ements for the degree in Doctor of Philosophy © Alysha G. McNeil 2018 Follow this and additional works at: https://ir.lib.uwo.ca/etd Part of the Earth Sciences Commons Recommended Citation McNeil, Alysha G., "Crystallization processes and solubility of columbite-(Mn), tantalite-(Mn), microlite, pyrochlore, wodginite and titanowodginite in highly fluxed haplogranitic melts" (2018). Electronic Thesis and Dissertation Repository. 5261. https://ir.lib.uwo.ca/etd/5261 This Dissertation/Thesis is brought to you for free and open access by Scholarship@Western. It has been accepted for inclusion in Electronic Thesis and Dissertation Repository by an authorized administrator of Scholarship@Western. For more information, please contact [email protected]. Abstract Niobium and tantalum are critical metals that are necessary for many modern technologies such as smartphones, computers, cars, etc. Ore minerals of niobium and tantalum are typically associated with pegmatites and include columbite, tantalite, wodginite, titanowodginite, microlite and pyrochlore. Solubility and crystallization mechanisms of columbite-(Mn) and tantalite-(Mn) have been extensively studied in haplogranitic melts, with little research into other ore minerals. A new method of synthesis has been developed enabling synthesis of columbite-(Mn), tantalite-(Mn), hafnon, zircon, and titanowodginite for use in experiments at temperatures ≤ 850 °C and 200 MPa, conditions attainable by cold seal pressure vessels. -
Compilation of Crystal Growers and Crystal Growth Projects Research Materials Information Center
' iW it( 1 ' ; cfrv-'V-'T-'X;^ » I V' 1l1 II V/ f ,! T-'* «( V'^/ l "3 ' lyJ I »t ; I« H1 V't fl"j I» I r^fS' ^SllMS^W'/r V '^Wl/ '/-D I'ril £! ^ - ' lU.S„AT(yMIC-ENERGY COMMISSION , : * W ! . 1 I i ! / " n \ V •i" "4! ) U vl'i < > •^ni,' 4 Uo I 1 \ , J* > ' . , ' ^ * >- ' y. V * / 1 \ ' ' i S •>« \ % 3"*V A, 'M . •. X * ^ «W \ 4 N / . I < - Vl * b >, 4 f » ' ->" ' , \ .. _../.. ~... / -" ' - • «.'_ " . Ife .. -' < p / Jd <2- ORNL-RMIC-12 THIS DOCUMENT CONFIRMED AS UNCLASSIFIED DIVISION OF CLASSIFICATION COMPILATION OF CRYSTAL GROWERS AND CRYSTAL GROWTH PROJECTS RESEARCH MATERIALS INFORMATION CENTER \i J>*\,skJ if Printed in the United States of America. Available from National Technical Information Service U.S. Department of Commerce 5285 Port Royal Road, Springfield, Virginia 22t51 Price: Printed Copy $3.00; Microfiche $0.95 This report was prepared as an account of work sponsored by the United States Government. Neither the United States nor the United States Atomic Energy Commission, nor any of their employees, nor any of their contractors, subcontractors, or their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness or usefulness of any information, apparatus, product or process disclosed, or represents that its use would not infringe privately owned rights. ORNL-RMIC-12 UC-25 - Metals, Ceramics, and Materials Contract No. W-7405-eng-26 COMPILATION OF CRYSTAL GROWERS AND CRYSTAL GROWTH PROJECTS T. F. Connolly Research Materials Information Center Solid State Division NOTICE This report was prepared as an account of work sponsored by the Unitsd States Government. -
Organometallic Pnictogen Chemistry
Institut für Anorganische Chemie 2014 Fakultät für Chemie und Pharmazie | Sabine Reisinger aus Regensburg, geb. Scheuermayer am 15.07.1983 Studium: Chemie, Universität Regensburg Abschluss: Diplom Promotion: Prof. Dr. Manfred Scheer, Institut für Anorganische Chemie Sabine Reisinger Die vorliegende Arbeit enthält drei Kapitel zu unterschiedlichen Aspekten der metallorganischen Phosphor- und Arsen-Chemie. Zunächst werden Beiträge zur supramolekularen Chemie mit 5 Pn-Ligandkomplexen basierend auf [Cp*Fe(η -P5)] und 5 i [Cp*Fe(η - Pr3C3P2)] gezeigt, gefolgt von der Eisen-vermittelten Organometallic Pnictogen Aktivierung von P4, die zu einer selektiven C–P-Bindungsknüpfung führt, während das dritte Kapitel die Verwendung von Phosphor Chemistry – Three Aspects und Arsen als Donoratome in mehrkernigen Komplexen mit paramagnetischen Metallionen behandelt. Sabine Reisinger 2014 Alumniverein Chemie der Universität Regensburg E.V. [email protected] http://www.alumnichemie-uniregensburg.de Aspects Three – Chemistry Pnictogen Organometallic Fakultät für Chemie und Pharmazie ISBN 978-3-86845-118-4 Universität Regensburg Universitätsstraße 31 93053 Regensburg www.uni-regensburg.de 9 783868 451184 4 Sabine Reisinger Organometallic Pnictogen Chemistry – Three Aspects Organometallic Pnictogen Chemistry – Three Aspects Dissertation zur Erlangung des Doktorgrades der Naturwissenschaften (Dr. rer. nat.) der Fakultät für Chemie und Pharmazie der Universität Regensburg vorgelegt von Sabine Reisinger, geb. Scheuermayer Regensburg 2014 Die Arbeit wurde von Prof. Dr. Manfred Scheer angeleitet. Das Promotionsgesuch wurde am 20.06.2014 eingereicht. Das Kolloquium fand am 11.07.2014 statt. Prüfungsausschuss: Vorsitzender: Prof. Dr. Helmut Motschmann 1. Gutachter: Prof. Dr. Manfred Scheer 2. Gutachter: Prof. Dr. Henri Brunner weiterer Prüfer: Prof. Dr. Bernhard Dick Dissertationsreihe der Fakultät für Chemie und Pharmazie der Universität Regensburg, Band 4 Herausgegeben vom Alumniverein Chemie der Universität Regensburg e.V. -
LOW LOSS ORIENTATION-PATTERNED GALLIUM ARSENIDE (Opgaas)
LOW LOSS ORIENTATION-PATTERNED GALLIUM ARSENIDE (OPGaAs) WAVEGUIDES FOR NONLINEAR INFRARED FREQUENCY CONVERSION Dissertation Submitted to The School of Engineering of the UNIVERSITY OF DAYTON In Partial Fulfillment of the Requirements for The Degree of Doctor of Philosophy in Electrical and Computer Engineering By Izaak Vincent Kemp Dayton, Ohio December 2012 LOW LOSS ORIENTATION-PATTERNED GALLIUM ARSENIDE (OPGaAs) WAVEGUIDES FOR NONLINEAR INFRARED FREQUENCY CONVERSION Name: Kemp, Izaak Vincent APPROVED BY: Dr. Andrew Sarangan Dr. Peter Powers Advisory Committee Chairman Committee Member Professor Professor Electrical and Computer Engineering Department of Physics Dr. Partha Banerjee Dr. Guru Subramanyam Committee Member Committee Member Professor Department Chair Electrical and Computer Engineering Electrical and Computer Engineering Dr. Rita Peterson Dr. Kenneth Schepler Committee Member Committee Member Adjunct Professor Adjunct Professor Electro-Optics Electro-Optics John G. Weber, Ph.D. Tony E. Saliba, Ph.D. Associate Dean Dean, School of Engineering School of Engineering &Wilke Distinguished Professor ii © Copyright by Izaak Vincent Kemp All rights reserved 2012 iii Distribution Statement A: Approved for public release, distribution is unlimited. This dissertation contains information regarding currently ongoing U.S. Department of Defense (DoD) research that has been approved for public release. Distribution of this dissertation is unlimited pursuant to DoD Directive 5230.24 subsection A4. Requests for further information may be referred to the author, Izaak V. Kemp AFRL/RYMWA. iv ABSTRACT LOW LOSS ORIENTATION-PATTERNED GALLIUM ARSENIDE (OPGaAs) WAVEGUIDES FOR NONLINEAR INFRARED FREQUENCY CONVERSION Name: Kemp, Izaak Vincent University of Dayton Advisor: Dr. Andrew Sarangan The mid-IR frequency band (λ = 2-5 μm) contains several atmospheric transmission windows making it a region of interest for a variety of medical, scientific, commercial, and military applications. -
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Z. Kristallogr. 226 (2011) 435–446 / DOI 10.1524/zkri.2011.1363 435 # by Oldenbourg Wissenschaftsverlag, Mu¨nchen Structural chemistry of superconducting pnictides and pnictide oxides with layered structures Dirk JohrendtI, Hideo HosonoII, Rolf-Dieter HoffmannIII and Rainer Po¨ttgen*, III I Department Chemie und Biochemie, Ludwig-Maximilians-Universita¨t Mu¨nchen, Butenandtstraße 5–13 (Haus D), 81377 Mu¨nchen, Germany II Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan III Institut fu¨r Anorganische und Analytische Chemie, Universita¨t Mu¨nster, Corrensstraße 30, 48149 Mu¨nster, Germany Received October 29, 2010; accepted February 6, 2011 Pnictide / Pnictide oxide / Superconductivity / for hydride formation of CeRuSi ! CeRuSiH [6] and Intermetallics / Group-subgroup relation CeRuGe ! CeRuGeH [7]. The crystal chemical data of the huge number of ZrCuSiAs materials have recently Abstract. The basic structural chemistry of supercon- been reviewed [8]. ducting pnictides and pnictide oxides is reviewed. Crystal Although the basic crystallographic data of the many chemical details of selected compounds and group sub- ThCr2Si2 and ZrCuSiAs type compounds are known for group schemes are discussed with respect to phase transi- several years, especially for the ZrCuSiAs family, systema- tions upon charge-density formation, the ordering of va- tic property studies have been performed only recently. cancies, or the ordered displacements of oxygen atoms. These investigations mainly focused on p-type transparent Furthermore, the influences of doping and solid solutions semiconductors like LaCuSO (for a review see [9]) or the on the valence electron concentration are discussed in or- colored phosphide and arsenide oxides REZnPO [10] and der to highlight the structural and electronic flexibility of REZnAsO [11]. -
Getting Ready for Indium Gallium Arsenide High-Mobility Channels
88 Conference report: VLSI Symposium Getting ready for indium gallium arsenide high-mobility channels Mike Cooke reports on the VLSI Symposium, highlighting the development of compound semiconductor channels in field-effect transistors on silicon for CMOS. esearchers across the world are readying the layer overgrowth or aspect-ratio trapping (ART) — are implementation of indium gallium arsenide free in the vertical direction, and thickness and surface R(InGaAs) and other III-V compound semicon- smoothness are determined post-growth by lithography ductors as high-mobility channel materials in field- or chemical mechanical polishing (CMP). The CELO effect transistors (FETs) on silicon (Si) for mainstream process filters out defects by the abrupt change in complementary metal-oxide-semiconductor (CMOS) growth direction from vertical to lateral, as constrained electronics applications. The latest Symposia on VLSI by the cavity. The researchers believe their technique Technology and Circuits in Kyoto, Japan in June featured avoids the main problems of alternative methods of a number of presentations from leading companies and integrating InGaAs into CMOS in terms of limited wafer university research groups directed towards this end. size, high cost, roughness, or background doping. In addition, Intel is proposing gallium nitride (GaN) The cap of the cavity was removed to access the for mobile applications such as voltage regulators or InGaAs for device fabrication. Also the InGaAs material radio-frequency power amplifiers, which require low was removed from the seed region to electrically power consumption and low-voltage operation. Away isolate the resulting devices from the underlying from III-V semiconductors, much interest has been silicon substrate. -
On the New Oxyarsenides Eu5zn2as5o and Eu5cd2as5o
crystals Article On the New Oxyarsenides Eu5Zn2As5O and Eu5Cd2As5O Gregory M. Darone 1,2, Sviatoslav A. Baranets 1,* and Svilen Bobev 1,* 1 Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716, USA; [email protected] 2 The Charter School of Wilmington, Wilmington, DE 19807, USA * Correspondence: [email protected] (S.B.); [email protected] (S.A.B.); Tel.: +1-302-831-8720 (S.B. & S.A.B.) Received: 20 May 2020; Accepted: 1 June 2020; Published: 3 June 2020 Abstract: The new quaternary phases Eu5Zn2As5O and Eu5Cd2As5O have been synthesized by metal flux reactions and their structures have been established through single-crystal X-ray diffraction. Both compounds crystallize in the centrosymmetric space group Cmcm (No. 63, Z = 4; Pearson symbol oC52), with unit cell parameters a = 4.3457(11) Å, b = 20.897(5) Å, c = 13.571(3) Å; and a = 4.4597(9) Å, b = 21.112(4) Å, c = 13.848(3) Å, for Eu5Zn2As5O and Eu5Cd2As5O, respectively. The crystal structures include one-dimensional double-strands of corner-shared MAs4 tetrahedra (M = Zn, Cd) and As–As bonds that connect the tetrahedra to form pentagonal channels. Four of the five Eu atoms fill the space between the pentagonal channels and one Eu atom is contained within the channels. An isolated oxide anion O2– is located in a tetrahedral hole formed by four Eu cations. Applying the valence rules and the Zintl concept to rationalize the chemical bonding in Eu5M2As5O(M = Zn, Cd) reveals that the valence electrons can be counted as follows: 5 [Eu2+] + 2 [M2+] + 3 × × × [As3–] + 2 [As2–] + O2–, which suggests an electron-deficient configuration. -
Gallium Arsenide
pp 163-196.qxp 31/05/2006 10:18 Page 163 GALLIUM ARSENIDE 1. Exposure Data 1.1 Chemical and physical data 1.1.1 Nomenclature Chem. Abstr. Serv. Reg. No.: 1303-00-0 Deleted CAS Reg. No.: 12254-95-4, 106495-92-5, 116443-03-9, 385800-12-4 Chem. Abstr. Serv. Name: Gallium arsenide (GaAs) IUPAC Systematic Name: Gallium arsenide Synonyms: Gallium monoarsenide 1.1.2 Molecular formula and relative molecular mass GaAs Relative molecular mass: 144.6 1.1.3 Chemical and physical properties of the pure substance (a) Description: Grey, cubic crystals (Lide, 2003) (b) Melting-point: 1238 °C (Lide, 2003) (c) Density: 5.3176 g/cm3 (Lide, 2003) (d) Solubility: Insoluble in water (Wafer Technology Ltd, 1997); slightly soluble in 0.1 M phosphate buffer at pH 7.4 (Webb et al., 1984) (e) Stability: Decomposes with evolution of arsenic vapour at temperatures above 480 °C (Wafer Technology Ltd, 1997) (f) Reactivity: Reacts with strong acid reducing agents to produce arsine gas (Wafer Technology Ltd, 1997) 1.1.4 Technical products and impurities Purity requirements for the raw materials used to produce gallium arsenide are stringent. For optoelectronic devices (light-emitting diodes (LEDs), laser diodes, photo- detectors, solar cells), the gallium and arsenic must be at least 99.9999% pure; for –163– pp 163-196.qxp 31/05/2006 10:18 Page 164 164 IARC MONOGRAPHS VOLUME 86 integrated circuits, a purity of 99.99999% is required. These purity levels are referred to by several names: 99.9999%-pure gallium is often called 6-nines, 6N or optoelectronic grade, while 99.99999%-pure gallium is called 7-nines, 7N, semi-insulating (SI) or integrated circuit (IC) grade. -
MSDS for Gallium Arsenide HOME
MSDS for Gallium Arsenide HOME News 1. PRODUCT AND COMPANY IDENTIFICATION Meeting Schedule 2006 Product Name: Gallium Arsenide C.A.S. Number: Full Product Listing 1303-00-0 Growth Technologies Material Evaluation Chemical Formula: GaAs Mol. Wt. 144.64 Material Safety Data Sheets Manufacturer: Wafer Technology Investor Relations Ltd Internet Resources Employment Opportunities Address: 34 Maryland Rd Tel: +44 (0)1908 Contact Details Tongwell 210444 Milton Keynes Fax: +44 (0)1908 MK15 8HJ 210443 Quick Quotation United Kingdom 2. COMPOSITION Chemical: Pure Compound 51.8 wt% As 48.2 wt% Ga MEL ( 8hr TWA): Ga N/A As 0.1mg m-3 3. HAZARD IDENTIFICATION Toxic by inhalation and if swallowed. Repeated and/or prolonged contact may cause dermatitis. Repeated exposure may produce adverse effects on the lung, liver and kidney. A possible human carcinogen. 4. FIRST AID MEASURES Inhalation: Remove patient from exposure. Obtain medical attention. Skin contact: Wash immediately with water. If symptoms occur, obtain medical attention. Eye contact: Irrigate with clean water or eyewash solution for at least 10 mins. Ingestion: Wash out mouth with water. Obtain immediate medical attention. 5. FIRE FIGHTING MEASURES Extinguishing Use dry extinguishers suitable for metal fires Media: Special Hazards: Product will thermally decompose above 480°C evolving toxic vapours of arsenic and oxides of arsenic. Reaction with acid and/or steam may release toxic arsine gas. Protective Wear full protective equipment and self- Equipment: contained breathing apparatus. Take measures appropriate for arsenic. 6. ACCIDENTAL RELEASE MEASURES Personal Wear protective equipment including gloves precautions: and appropriate respiratory protection. Evironment: Prevent any release to drains or water courses or emission of dust or fumes to air.