Interactive Booklet

INTERACTIVE BOOKLET

TABLE OF CONTENT

PROGRAMME OVERVIEW

AUTHOR INDEX

CONFERENCE MAPS Electron Beam Technology

41ST | MICRO AND NANO ENGINEERING | THE HAGUE New 41ST MICRO AND NANO ENGINEERING

Select First-choice Evolutionary Technology

Optimized for all direct write applications based on a 155 mm by 155 mm stage, from small piece parts up to full 150 mm substrates 200 nm • 20, 50 and 100 kV PROGRAMME • Pattern generator speeds to 100 MHz • Automated system operation • High resolution at large ﬁ eld size capability • Sub-10 nm lithography (1 mm ﬁ eld size) Visit us at the Raith booth no. 6/7 Automatic 10 holder operation

DEDICATED ELECTRON BEAM LITHOGRAPHY THE HAGUE THE NETHERLANDS www.raith.com 21– 24 SEPTEMBER 2015

WWW.MNE2015.ORG

Anz EBPG MNE 95x210 Raith 15-08 RZ.indd 1 28.08.15 14:45 MNE2015programmaboekje-Cover in delen.indd 1-2 10-09-15 09:37 Electron Beam Technology

41ST | MICRO AND NANO ENGINEERING | THE HAGUE New 41ST MICRO AND NANO ENGINEERING

Select First-choice Evolutionary Technology

DEDICATED ELECTRON BEAM LITHOGRAPHY THE HAGUE THE NETHERLANDS www.raith.com 21– 24 SEPTEMBER 2015

WWW.MNE2015.ORG

Anz EBPG MNE 95x210 Raith 15-08 RZ.indd 1 28.08.15 14:45 MNE2015programmaboekje-Cover in delen.indd 1-2 10-09-15 09:37 Silver Sponsors: Gold Sponsors:

Micro-nanotech Cluster of Western Switzerland

MNE2015programmaboekje-Cover in delen.indd 3-4 10-09-15 09:37 Silver Sponsors: Gold Sponsors:

Micro-nanotech Cluster of Western Switzerland

MNE2015programmaboekje-Cover in delen.indd 3-4 10-09-15 09:37 ProgrammeProgramme overview overview

MNE2015programmaboekje-Cover in delen.indd 5-6 10-09-15 09:37 The 41st International Conference on Micro-and Nano-Engineering MNE2015

World Forum The Hague, The Netherlands September 21-24, 2015

Organising Partners

DISCLAIMER: Although care has been taken to ensure the accuracy, completeness and reliability of the information provided in this programme booklet, The MNE2015 organisation assumes no responsibility therefore.

1 Content Content 2 Conference organisation and committees 4 Welcome 8 Information 9 Conference location. 9 Registration hours 9 Conference schedule 9 Sponsors – Exhibitors 9 Internet/Wifi 9 Speaker-Ready Room (Volga1) 9 Posters, best poster competition 10 Special sessions 10 Awards 10 Coffee/Lunch 10 Dinner and social events 10 Micro-& Nano-graph contest 11 Publications 11 MNE2015 on the web – book of abstracts 11 MNE Conference App 11 Oral Programme: clusters and sessions 11 Key to sessions/paper numbers 12 Oral Programme Overview 13 Tuesday Morning 22 September 2015 30 Plenary Session 1 30 A3 - Electron and Ion Beam Lithography 30 B4 - 3D Micro Manufacturing and Micro Printing 32 C1.1 - MEMS/NEMS Sensing 1 34 D5 - System Design and Fabrication 36 Tuesday Afternoon 22 September 2015 38 A5 - Materials for lithography, resists and resist processing 38 B3 -Electron/Ion Beam deposition, related technologies, applications 39 C1.2 - MEMS/NEMS Fabrication and Reliability 41 D6 - Applications 43 Tuesday Poster Session and Exhibition 45 Special Sessions 81 Single Nanometer Manufacturing (SNM) 81 Chemistry for ELectron Induced NAnofabrication (CELINA) 82 Wednesday Morning 23 September 2015 85 Plenary Session 2 85 A6 - Directed Self Assembly 85 A7 - Stencil and Tip Based Patterning 87 B7 - Metrology 89 B8 - Self Aligned Processes 91 C5.1 - Micro and Nano devices for Physical Science - Computing 92 C5.2 - Micro and Nano devices for Physical Science - Nano Tubes and Nano Wires 93 D3 - Organ on a Chip 95 D2 - Lab on Chip 96 Wednesday Afternoon 23 September 2015 99 A1 - Photo Lithography 99 C3 - Meta Materials and their Fabrication 100 C5.3 - Micro and Nano devices for Physical Science - Instrumentation and Imaging 101 D4 - Micro and Nanofluidics for Biology and Life Sciences 102 Plenary Session 3 103 Wednesday Poster Session and Exhibition 104 Thursday Morning 24 September 2015 141 Award Ceremony 141 A4.1 - Soft Lithography 1 141 A9 - Novel Techniques 142 MEE Young Investigator Award Lecture - Late and Hot News Session 144 B1 - Pattern Transfer 144 C1.3 -MEMS/NEMS for Energy Harvesting 146 C1.4 -MEMS/NEMS graphene devices 147 D1.1 - Mechanical Sensing Elements 149 D1.2 - Sensing Systems 150 Thursday Afternoon 24 September 2015 153 A4.2 - Soft Lithography 2 153 B2 - Plasma Etching 154 C2 - Micro and Nano Fluidic Systems 155 D1.3 - Optical Sensing Elements 156 Plenary Session 5 157 List of Authors 159 Micro-Nano-graph contest ballot 189

World Forum ground floor map 191 Sponsors booth list 193 World Forum first floor map 193

3 Conference organisation and committees

Conference Chair Kees Hagen, Delft University of Technology

Programme Chair Urs Staufer, Delft University of Technology

MNE2015 Organizing Committee Frank Dirne, Delft University of Technology Paul Alkemade, Delft University of Technology Remco Wiegerink, University of Twente Luigi Sasso, Delft University of Technology Ageeth Bol, Eindhoven University of Technology Harm Knoops, Oxford Instruments plasma Technology Marko Blom, Micronit Microfluidics B.V. Patrick de Jager, ASML Hans Mulders,FEI Company Lucienne Dado, Ab-Initio, PCO Inge van Marion, Ab-Initio, PCO

MNE International Steering Committee Anja Boisen, Technical University of Denmark – Denmark Hubert Brückl, Danube University Krems – Austria Michel Despont, CSEM – Switzerland Zahid Durrani, Imperial College London – United Kingdom Massimo Gentili (Chair), Centre for Materials and Microsystems – Italy Evangelos Gogolides, NCSR Demokritos Athens – Greece Gabi Grützner, micro resist technology GmbH – Germany Jean-Francois de Marneffe, IMEC Leuven – Belgium J. Alexander Liddle, NIST Gaithersburg – USA Shinji Matsui, University of Hyogo – Japan Francesc Pérez-Murano, CNM-CSIC Barcelona – Spain Urs Staufer, Delft University of Technology – Netherlands Christophe Vieu, LAAS-CNRS Toulouse – France

MNE International Programme Committee Gabriel Abadal Universitat Autònoma de Barcelona Maan Alkaisi University of Canterbury, NZ Paul Alkemade Delft University of Technology Sternberg Andris University of Latvia Panagiotis Argitis NCSR Demokritos Gonçal Badenes ICFO Joan Bausells CSIC Uwe Behringer UBC Microelectronics Gérard Benassayag CEMES/CNRS Max Planck Institute for Polymer Ruediger Berger Research Iris Bergmair Sony DADC Austria AG Marko Blom Micronit Microfluidics BV

Ageeth Bol TU-Eindhoven Martin Brandl Danube University Krems Hubert Brückl EPFL Juergen Brugger Danube University Krems Claus J. Burkhardt NMI Stefano Cabrini Lawrence Berkeley National Laboratory Victor J. Cadarso Paul Scherrer Institut Christophe Cardinaud CNRS Aline Cerf LAAS-CNRS Wen-Huei Chang National Pingtung University Hsuen-Li Chen National Taiwan University Lei Chen NIST Rebecca Cheung University of Edinburgh Jin-Woo Choi Louisiana State University Vieu Christophe University of Toulouse Vassilios Constantoudis National Center for Scientific Research Demokritos Bo Cui University of Waterloo Neil Curson UCL Stefan De Gendt IMEC / KU-Leuven JF de Marneffe IMEC Massimo De Vittorio University of Salento Emiliano Descrovi Politecnico di Torino Panagiotis Dimitrakis NCSR Demokritos Zoran Djuric Institute of Technical Sciences of SASA Klaus Stefan Drese Fraunhofer ICT-IMM Andreas Erdmann Fraunhofer IISB Theodore H. Fedynyshyn MIT Lincoln Laboratory César Fernández-Sánchez CSIC Monika Fleischer University of Tuebingen Kristel Fobelets Imperial College London Hiroshi Fukuda Hitachi High-Technologies Corporation Sebastian Gautsch EPFL Massimo Gentili FBK Annamaria Gerardino CNR Gerald Gerlach TU Dresden Jacques Gierak LPN-CNRS Ioanna Giouroudi Vienna University of Technology Jens Gobrecht Paul Scherrer Institute Evangelos Gogolides NCSR Demokritos Markus Graf Sensirion Brian J. Grenon Grenon Consulting, Inc. Vitaliy Guzenko Paul Scherrer Institute Cornelis W. Hagen Delft University of Technology Peter Hahmann Vistec Electron Beam GmbH Lloyd Harriott University of Virginia Harry Heinzelmann CSEM Laura Heyderman ETH Zurich - Paul Scherrer Institute Bart Hoogenboom University College London Toshiro Itani EUVL Infrastructure Development Center, Inc.

Shi Jian Ecole Normale Supérieure de Paris Mervyn Jones Imperial College London Grigoris Kaltsas Technological Educational Institute of Athens Songphol Kanjanachuchai Chulalongkorn University Dieter Kern Tübingen University Gyu Man Kim Kyungpook National University Beomjoon Kim The University of Tokyo Robert Kirchner Paul Scherrer Institut Eugenie Kirk Paul Scherrer Institut Harm Knoops Oxford Instruments Plasma Technology Fu-Hsiang Ko National Chiao Tung Uni Manfred Kohl KIT Richard Koops VSL Dutch Metrology Institute Anders Kristensen Technical University of Denmark Pieter Kruit TUDelft Josiane P. Lafleur University of Copenhagen Laura Lechuga ICN2 JaeJong Lee Korea Institute of Machinery and Materials J. Alexander Liddle NIST Chun-Hung Lin National Cheng Kung University Ran Liu Fudan Universty Andreu Llobera Institut de Microelectronica de Barcelona Hans Loeschner IMS Nanofabrication AG Leandro Lorenzelli Fondazione Bruno Kessler Regina Luttge Eindhoven University of Technology Eleni Makarona NCSR Demokritos Laurent Malaquin LAAS CNRS Adrian Martinez-Rivas Instituto Politécnico Nacional Cristina Martin-Olmos CSEM Shinji Matsui University of Hyogo Faisal Mohd-Yasin Griffith University Isabella Moser Jobst technologies Miha Mraz University of Ljubljana Xavier Munoz-Berbel IMB-CNM, CSIC Pascal Normand NCSR "Demokritos" Shunri Oda Tokyo Institute of Technology Je Hoon Oh Hanyang University Heidi Ottevaere Vrije Universiteit Brussel James Owen Zyvex Labs Tung-Ming Pan Chang Gung University Stella Pang City University of Hong Kong Francesc Perez-Murano IMB-CNM, CSIC Francesco Pieri Università di Pisa Pasqualantonio Pingue Scuola Normale Superiore Phil Prewett University of Birmingham Christelle Prinz Lund University Muhammad Aftab Rafiq Pakistan Institute of Engineering and Applied Sciences

Ioannis Raptis NCSR "Demokritos' Alex Robinson University of Birmingham Francois Rossi European Commission Xavier Rottenberg IMEC Luigi Sasso Delft University of Technology Steven Schofield University College London Joerg Schotter Austrian Institute of Technology GmbH Urs Staufer TU Delft Blunier Stefan ETH Zurich Ralf Steingrueber Fraunhofer Heinrich-Hertz-Institute Rafael Taboryski Technical University of Denmark Maria Tenje Uppsala University Christos Tsamis NCSR Demokritos Angeliki Tserepi NCSR Demokritos Dimitris Tsoukalas National Technial University of Athens Falco van Delft Molecular Sense Ltd. Jeroen A van Kan National University Singapore Guillermo Villanueva EPFL Katia Vutova Institute of electronics, Bulgarian Academy of Sciences Michael Ward Birmingham City University Remco Wiegerink University of Twente Sandra Wolff TU Kaiserslautern Ioanna Zergioti National Technical University of Athens

Welcome Welcome to MNE 2015, the 41st International Conference on Micro and Nano Engineering - welcome to The Hague, the International City of Peace and Justice! We are very happy that you join us for three days of scientific discussions, exchange of latest technology developments, and cultivating personal and professional friendship. MNE was started in Cambridge (UK) in 1975 and since then was annually held at different locations in Europe. It is the conference that brings together engineers and scientists from all over the world to discuss recent progress and future trends in the fabrication and application of micro- and nanostructures and devices. Applications in electronics, photonics, electromechanics, environment, life sciences and biology are also discussed. MNE 2015 continues this tradition and will present an attractive technical programme that features 6 plenary, 14 invited, and 419 contributed papers of which about 2/3 will be presented as posters. The poster session is split in two, such that also presenters have the time to visit other posters. All posters will be on display during the entire conference. The oral presentations are given in four parallel sessions, spread over three consecutive days. For the first time, we will offer a ‘late and hot news’ session, which will feature both posters and 3 oral presentations. At the moment of print, it was not clear how you, dear participants of MNE, react to this opportunity and we are very curious about your response. MNE is a conference covering the transition of basic scientific and engineering knowledge into instrumentation and device applications and commercialisation. The industrial exhibition forms therefore an integral part of the conference, and we are very pleased that we can announce an interesting show exhibiting all the important companies in the field. These companies support the conference through their participation and sponsorship for which we are very grateful. We also thank our non-technical sponsors for their contribution to MNE. Without their help, the conference could not take place! Since a few years, the International Steering Committee awards a prize, the MNE Fellow Award, to recognise the work of a person and his contributions to the field of MNE. We are very happy that this year’s award, sponsored by ASML, will be presented to Dr. Emile van der Drift (Delft University of Technology). Please join his award lecture on Thursday morning. Since 2014, Elsevier is sponsoring the MEE Young Investigator Award, a prize to recognise researchers in their early career for their contributions to the field of the journal Microelectronic Engineering (MEE). This year’s prize will be awarded to Stephan S. Keller. He will also present his award lecture as an invited talk on Thursday morning. Finally, we thank the local organizing committee members, the international programme committee and the international steering committee for their support in organizing this event, and we hope that you all will have a successful memorable meeting! Kees Hagen (Conference Chair) and Urs Staufer (Program Chair).

Information Conference location. The MNE2015 conference will be held in the World Forum: World Forum Churchillplein 10 2517 JW The Hague The Netherlands www.worldforum.nl Registration hours The registration desk at the Ground Floor of the World Forum, in the Pangea area, will be open during the hours listed below. Please check in upon arrival. Badges (white) are required to attend the technical sessions. Badges with a coloured dot give access to the Welcome Reception and Conference banquet only. Monday, September 21 1200 – 1900 hrs. Tuesday, September 22 0730 – 1800 hrs. Wednesday, September 23 0830 – 1800 hrs. Thursday, September 24 0830 – 1530 hrs. Conference schedule The conference opens on Monday at 5 pm with the industrial exhibition and the welcome reception in the exhibition area. Here is your opportunity to meet with vendors of equipment and materials relevant to the conference, and to meet your colleagues from all over the world. The plenary session begins on Tuesday morning at 8.30 am. Sponsors – Exhibitors The MNE2015 organisation gratefully thanks their conference sponsors and the companies participating in the industrial exhibition. Conference attendees are invited to visit the exhibition that will be open at the hours listed below. Monday, September 21 1700 – 1900 hrs. Tuesday, September 22 0830 – 1800 hrs. Wednesday, September 23 0830 – 1800 hrs. Thursday, September 24 0830 – 1530 hrs. Internet/Wifi Wifi is available in the conference area on level 1 (including the lecture rooms) and on the ground floor. Network: MNE-2015 Password: MNE-2015 Speaker-Ready Room (Volga1) PLEASE NOTE THAT PRESENTERS MUST BRING A USB MEMORY STICK CONTAINING THEIR PRESENTATION and up-load their files to local PCs in the Speaker-Ready Room Volga1 (see map on back cover). For morning sessions, speakers must up-load their presentation files at the latest at 0800 in the morning on the day of the presentation; for afternoon sessions, speakers must up-load their presentation at the latest before 1300, during the break between the sessions. Technical staff will be available for assistance.

Posters, best poster competition Posters should be mounted on Monday after registration or Tuesday morning. They will stay on display during the entire conference. There are two poster sessions: even number (2, 4, 6 ...) posters will be presented on Tuesday afternoon (1530 - 1800), odd number (1, 3, 5 ...) posters on Wednesday afternoon (1530 - 1800). Each poster board will have a poster identification number. Please leave them on display and do not block them in order to provide a means for orientation of visitors to the poster session. Posters should be removed by Thursday 1330.

Prizes (sponsored by Raith GmbH) will be awarded to the best poster in each of the four clusters A, B, C, and D (see programme at inside front cover). The posters will be judged on visual impact, design and scientific content. The judges will be drawn from the international steering committee and the local programme committee. The four winners will be presented with their prizes and a commemorative certificate during the conference dinner. Special sessions Late Tuesday afternoon two special sessions will be held in parallel to the poster session: Single Nanometer Manufacturing-SNM (an EU- FP7 project) and Chemistry for Electron-Induced Nanofabrication- CELINA (An EU COST Action). Both sessions are open to all MNE attendees. Awards On Thursday morning, at 0830 in the World Forum Theatre, the 2015 MNE Fellowship (sponsored by ASML) will be awarded to Emile van der Drift (Delft University of Technology) and the 2015 Young Investigator Award (sponsored by Elsevier) will be awarded to Stephan S. Keller (Technical University of Denmark). Immediately after the award ceremony Emile van der Drift will give a plenary lecture "Quantitative technology, a joy forever”, and Stephan Keller will present an invited lecture at 0930 hr in the next parallel session in the World Forum Theatre. Coffee/Lunch Coffee breaks will be between 1030 and 1100 and between 1500 and 1530 around the exhibition area. Lunch will be served during the break from 1230 and 1330, also around the exhibition area. Dinner and social events There will be an informal welcome reception (sponsored by EV Group) on Monday evening from 1700-1900 on the first floor of the World Forum for all participants and accompanying persons. Drinks will be served, together with a selection of typical Dutch food, the perfect setting to catch up with old friends and make new ones. The conference dinner (sponsored by SPTS) on Wednesday night will be held at Madurodam (George Maduroplein 1, 2584 RZ The Hague, Phone: +31(0)704162400, Web: http://www.madurodam.nl/). The doors open at 1800, dinner will start at 2000, and the event ends at 2400. There will be no transportation organised to and from Madurodam, as it can be reached by public transportation or by foot

from the Word Forum. There will be no entry into Madurodam without a valid badge, so please do not forget to bring it with you! Additional banquet tickets can be bought at the registration desk as long as there is seating available. Micro-& Nano-graph contest During the conference dinner on Wednesday night John Randall from Zyvex will announce the winner of the most strange or most beautiful micro- or nano-art work (Sponsored by Zyvex). Publications As in previous years, all presenters are kindly asked to publish their contribution in one of the four special issues to appear after peer- reviewing in the Journal of Microelectronic Engineering: ‘Micro/Nano devices and systems’, ‘Micro- and Nano-Patterning’, ‘Micro- and Nano-Technologies for Biology and Life Sciences’, and ‘Micro/Nano Fabrication 2015’. Manuscript submission deadline is 23 October 2015. MNE2015 on the web – book of abstracts Up-to-date information on all aspects of MNE2015 can be found at www.mne2015.org A searchable pdf file containing all the abstracts can be downloaded from the website. MNE Conference App For the first time an MNE Conference App is available and can be downloaded from the MNE2015 website, containing the scientific programme and information on the industrial exhibition. It allows you to make your own personal programme, make notes and add tags. The App can be used off-line, but being on-line offers the advantage of receiving updates, programme changes and late news. Oral Programme: clusters and sessions The programme has been divided into four clusters, and subdivided into sessions, as follows:

Cluster A: Micro- and Nanopatterning Session Session name A1 Photo Lithography A3 Electron and Ion Beam Lithography A4.1 Soft Lithography 1 A4.2 Soft Lithography 2 A5 Materials for lithography, resists and resist processing A6 Directed Self Assembly A7 Stencil and Tip Based Patterning A9 Novel Techniques

Cluster B: Micro- and Nanofabrication Session Session name B1 Pattern Transfer B2 Plasma Etching Electron/Ion Beam deposition, related technologies, B3 applications B4 3D Micro Manufacturing and Micro Printing B7 Metrology B8 Self Aligned Processes

Cluster C: Micro/Nano devices and systems Session Session name C1.1 MEMS/NEMS Sensing 1 C1.2 MEMS/NEMS Fabrication and Reliability C1.3 MEMS/NEMS for Energy Harvesting C1.4 MEMS/NEMS graphene devices C2 Micro and Nano Fluidic Systems C3 Meta Materials and their Fabrication C5.1 Micro and Nano devices for Physical Science – Computing C5.2 Micro and Nano devices for Physical Science - Nano Tubes and Nano Wires C5.3 Micro and Nano devices for Physical Science

Cluster D: Micro- and Nanotechnology/engineering for Life sciences and Biology Session Session name D1.1 Mechanical Sensing Elements D1.2 Sensing Systems D1.3 Optical Sensing Elements D2 Lab on Chip D3 Organ on a Chip D4 µ/n fluidics for bio/life science D5 System Design and Fabrication D6 Applications Key to sessions/paper numbers The programme has been divided into four clusters (A,B,C and D), and subdivided into sessions (1,2,3,…). For example: A5 means session 5 in cluster A. An oral contribution will be indicated in the programme as Day-Session-c# (eg. Tue-A3-c4 is the 4th contribution in session A3 on Tuesday). The first keynote lecture on Tuesday will be indicated in the programme as Tue-Keynote-1, etc. An invited lecture will be indicated in the programme as Day-session-inv, for instance Thu-A4-inv. The posters are grouped according to the clusters A, B, C, and D. In the programme a poster will be indicated as Day-session-p#, for instance Wed-B-p34 means poster number 34 in cluster B on Wednesday.

Oral Programme Overview

MNE2015

Tuesday Morning 22 September 2015 830 WF Theatre Chairs: Kees Hagen and Urs Staufer (TU-Delft, NL) Opening 900 Tue-Keynote-1 Nano-Lithography ‘WF Theatre’ Chair: Kees Hagen (TU-Delft, NL) Pieter Kruit 930 Tue-Keynote-2 Nano Fountain Probe Technology for In Vitro Single Cell Studies ‘WF Theatre’ Chair: Urs Staufer (TU-Delft, NL) Horacio Espinosa 1030 Break/Exhibition session A3. Electron and Ion Beam B4. 3D Micro Manufacturing C1.1. MEMS/NEMS Sensing 1 D5. System Design and Lithography and Micro Printing Fabrication Chair: J. Alexander Liddle (NIST, USA) Chair: Massimo Gentili (Fondazione Chair: Sternberg Andris (Univ. of Latvia, Chair: Joan Bausells (CSIC, ES) Bruno Kessler, IT) LV) room ‘Amazon’ ‘Yangtze’ ‘WF Theatre’ ‘Mississippi’ 1100 Tue-A3-c1 Tue-B4-c1 Tue-C1-c1 Tue-D5-inv Optimization of electron beam Inversed pyramid-shaped cave arrays Fabrication, characterisation and Technologies for point-of-care lithographic exposure of PMMA with nano-opening cap fabricated by behaviour of very low-power gas diagnostics implantation masks with high aspect laser interferometric lithography and sensing devices based on single M. Irmscher et al. ratio covering a topographic step wet etching nanowires Jens Bolten et al. Weijie Sun et al. J. Samà et al. 1115 Tue-A3-c2 Tue-B4-c2 Tue-C1-c2 Toward Less Than 50 nm-Line and Novel Open Channel Microneedle Integration of ZnO nanostructures onto Space Negative Tone Pattern Array Fabrication by 3D Laser a micro hot plate for gas sensing Fabrication by Electron Beam Lithography and Micromoulding A. Tommasi et al. Lithography using NEB-22 Techniques Makoto Okada et al. Zahra Faraji Rad et al. 1130 Tue-A3-c3 Tue-B4-c3 Tue-C1-c3 Tue-D5-c1 Characterization for the photomask High throughput fabrication of Integrated smart gas flow sensor with Fabrication of a smart contact lens fabrication based on a novel technique hierarchical photonic nanostructures 2.6 mW total power consumption and platform for the diagnosis of dry eye of high-resolution with a non- N. Schneider et al. 80 dB dynamic range disease chemically amplified resist and a post- Massimo Piotto et al. Sajina Tinku et al. exposure bake Hidetatsu Miyoshi et al. 1145 Tue-A3-c4 Tue-B4-c4 Tue-C1-c4 Tue-D5-c2 Focused ion beam current density Fabricating high density metal Flexible Magnetoresistive Devices with Top-down Zinc Oxide Nanowires by Ion profile derivation from single crystal structures using a six-fold line High-Performance Sensors Beam Etching for Biosensing amorphization region widths – analysis multiplying scheme H. Fonseca et al. Applications method J. Bosgra et al. Kai Sun et al. Yuval Greenzweig et al. 1200 Tue-A3-c5 Tue-B4-c5 Tue-C1-c5 Tue-D5-c3 Proximity Effect Quantification and Monolithic micro-optical components: High Frequency self-sensing On-chip glass microfluidic trap and Dose Optimisation for High Resolution advancing from novel master piezoresistive SPM cantilevers with a storage of helical magnetic microrobot Helium Ion Beam Lithography fabrication methodology towards high- novel design Barbot Antoine et al. Xiaoqing Shi et al. volume manufacturing schemes W. Engl et al. L. Jacot-Descombes et al. 1215 Tue-A3-c6 Tue-B4-c6 Tue-C1-c6 Tue-D5-c4 Fabrication of metallic nanostructures An effective approach for reducing MEMS mechanism for resonance Fast and Large Area Fabrication of by character projection based electron surface roughness of PMMA in frequency tuning Hierarchical Super Hydrophobic Silicon beam lithography and hard mask lift- grayscale EBL by thermal radiation Nao Takeda et al. Surfaces off technique induced local reflow Ghio S. et al. Torsten Harzendorf et al. Chen Xu et al. 1230-1330 Lunch Break, lunch served in the Exhibition Area

Early Tuesday Afternoon 22 September 2015 session A5. Materials for lithography, B3. Electron/Ion Beam C1.2. MEMS/NEMS Fabrication D6. Applications resists and resist processing deposition, related and Reliability Chair: Luigi Sasso (TU Delft, NL) Chair: Robert Kirchner (PSI, CH) technologies, applications Chair: Rebecca Cheung (Univ. of Chair: Claus J. Burkhardt (NMI, DE) Edinburgh, UK) room ‘Amazon’ ‘Yangtze’ ‘WF Theatre’ ‘Mississippi’ 1330 Tue-A5-inv Tue-B3-c1 Tue-C1-c7 Tue-D6-inv Resist material options for extreme Mimicking the iridescent color of free- Fabrication of a freestanding Semiconductor Nanowires, a Promising ultraviolet lithography standing Morpho butterfly wing scales nanofluidic gas channel between two Tool for Cell Sensing T. Kozawa fabricated by e-beam lithography metal membranes C.Prinz Sichao Zhang et al. G.J. Rademaker et al. 1345 Tue-B3-c2 Tue-C1-c8 Nanomagnets as building blocks of Hydrothermal growth of c-axis logic gates - 3D nano manufacturing of nanorod-based ZnO films for SAW nanomagnet assemblies by electron sensing applications beam induced deposition G. Rius et al. H.D. Wanzenboeck et al. 1400 Tue-A5-c1 Tue-B3-c3 Tue-C1-c9 Tue-D6-c1 Characterization of the anisotropy of Photoluminescence Emission from a Effect of fluorine surface modification Cell Direction Switching and Metastasis semi-crystalline polymers after nanofabricated Scanning Probe Tip on resonance of a carbon Screening by Designed Topography nanoimprint by spectroscopic Made of Epitaxial Germanium nanoresonator fabricated by FIB/EB S.F. Zhou et al. ellipsometry M.Bollani et al. dual-beam lithography Si Wang et al. R. Kometani et al. 1415 Tue-A5-c2 Tue-B3-c4 Tue-C1-c10 Tue-D6-c2 Highly extended PDMS stamp life-time Parallel imaging in a 196-Beam SEM Mass sensor utilising the mode- Substrate-Independent Immobilization enabled by the new organic photo- Y.Ren et al. localisation effect in an electro- of Monolayer Metal Nanoparticles curable soft NIL resist “mr-NIL210” statically-coupled MEMS resonator pair Array via Self-Assembly for Efficient Martin Messerschmidt et al. fabricated using an SOI process Antibiofilm Coatings Graham S. Wood et al. Shang-Yi Yi et al. 1430 Tue-A5-c3 Tue-B3-inv Tue-C1-c11 Tue-D6-c3 Pattern collapse mitigation in inorganic Focused electron beam induced Novel Saw Tooth Gate for Stiction and In situ protein crystallization on resists via a polymer freeze technique deposition of metallic binary alloy Pull-in Voltage Controlled Ohmic microfabricated chips for serial Tero S. Kulmala et al. nanostructures employing a Silicon NEMS Switch crystallography. heteronuclear precursor L. Boodhoo et al. Nadia Opara et al. 1445 Tue-A5-c4 M. Huth et al. Tue-C1-c12 Tue-D6-c4 Multiphoton Laser Ablation Exposing the tribological run-in of Rapid Prototyping for Microfluidics Lithography (MP-LAL) using 375 nm polysilicon MEMS sidewalls in sliding and Neuro-Engineering Continuous Wave Laser Enabling contact using in-situ force Anthony Leonard et al. Patterning down to the 30 nm Regime measurements with AFM-like and beyond resolution T. Manouras et al. Jaap Kokorian et al. 1500-1530 Break/Exhibition 1530 Poster session 1 (even numbers) / Exhibition Until 1800 session Special session S1. Single Special session S2. Chemistry Nanometer Manufacturing for ELectron Induced (SNM) NAnofabrication (CELINA) Chair: Ivo Rangelow (TU-Ilmenau) Chair: Ivo Utke (EMPA, CH) room ‘Amazon’ ‘Mississippi’ 1700 Tue-S1-c1 Tue-S2-c1 Introduction to Single Nanometer Chemistry for Electron Induced Manufacturing for beyond CMOS Nanofabrication: Introduction to COST devices (SNM) Action CM1301 – CELINA Ivo W. Rangelow Petra Swiderek et al. 1705 Tue-S1-c2 Tue-S2-c2 Charged particle single nanometer Focused electron beam induced nanofabrication processing (FEBIP) as maskless 3D Philip Prewett direct-write nanolithography platform 1725 Tue-S1-c3 H.D. Wanzenboeck et al. 1735 Thermal and Oxidation Scanning Probe Tue-S2-c3 Lithography Focused electron induced processing in Felix Holzner a surface science approach 1745 Tue-S1-c4 Hubertus Marbach Single nanometer pattern transfer Mike Cooke 1800 End of poster session 1 1805 Tue-S1-c5 Tue-S2-c4 3D-AFM/Metrology for sub 3nm Shape control in high resolution Marijn van Veghel Electron Beam Induced Deposition S. Hari et al. 1820 Tue-S2-c5 1825 Tue-S1-c6 Focused electron and ion beam induced deposition on flexible and Sub-10nm device development within the SNM Project transparent polycarbonate substrates Zahid Durrani J. M. de Teresa et al. 1835 Tue-S2-c6 1845 End of Special session S1 The SEM as reaction chamber: developing nanogranular Pt-C additive chemistry on the nanometer scale A.A.M. Al-Marashdeh et al. 1850 End of Special session S2

Early Wednesday Morning 23 September 2015 830 Wed-Keynote-3 Development of block copolymers to create complex material nanopatterns ‘WF Theatre’ Chair: Dieter Kern (Univ. Tuebingen, DE) Michael Morris 915 Relocation session A6. Directed Self Assembly B7. Metrology C5.1. Micro and Nano devices D3. Organ on a Chip Chair: Christophe Vieu (Univ. of Chair: Harm Knoops (TU Eindhoven, NL) for Physical Science - Chair: Stella Pang (City Univ. of Hong Toulouse, FR) Computing Kong, HK) Chair: Victor Cadarso (PSI, CH) room ‘Amazon’ ‘Yangtze’ ‘WF Theatre’ ‘Mississippi’ 930 Wed-A6-c1 Wed-B7-c1 Wed-C5-inv Wed-D3-c1 Capture probability of assembly Imaging and model simulation of Evolution of Superconducting Quantum Skin-on-chip : integration of skin tissue defects in 14 nm half-pitch line/space trenches on a silicon surface in helium Processors and microsystems engineering DSA patterns ion microscopy Leonardo DiCarlo Bergers Lambert et al. H.Pathangi et al. P.F.A. Alkemade et al. 945 Wed-A6-c2 Wed-B7-c2 Wed-D3-c2 Ordering of either nano-dot arrays or Diamond scanning probes with sub- Microelectrode array with integrated nano-lines along EB-drawn resist guide nanometer resolution for advanced sieving structure for automated cell lines using PS-PDMS self-assembly with nanoelectronics device characterization positioning a molecular weight of 1.46 kg/mol T. Hantschel et al. B. Schurink et al. Sumio Hosaka et al. 1000 Wed-A6-c3 Wed-B7-c3 Wed-C5-c1 Wed-D3-inv Determination of the interfacial Electric Fields in Scanning Electron Quantum Cellular Automata: Design Organs-on-chip by selective assembly energies in chemical guiding patterns Microscopy Simulations and Fabrication with the of primary cells enabled by for directed self-assembly of block co- K. T. Arat et al. Nanodamascene Process dielectrophoresis in microfluidic polymers Gabriel Droulers et al. devices Laura Evangelio et al. M.Stelzle 1015 Wed-A6-c4 Wed-B7-c4 Wed-C5-c2 Characterization of Half-pitch 15 nm Using Piezoresponse Force Microscopy Scaling and Integration of Memristive Metal Wire Circuit Fabricated by for semiconductor ZnO nanowires Nanodevices Using Nanoimprint Directed Self-assembly of PS-b-PMMA G. Murillo et al. Lithography Y. Kasahara et al. Shuang Pi et al. 1030-1100 Break/Exhibition session A7. Stencil and Tip Based B8. Self Aligned Processes C5.2. μ/nano - devices for D2. Lab on Chip Patterning Chair: Monika Fleischer (Univ. Physical Science–Nano Tubes Chair: Anja Boisen (DTU, DK) Chair: Pasqualantonio Pingue (Scuola Tuebingen, DE) and Nano Wires Normale Superior PISA, IT) Chair: Zahid Durani (Imperial College London, UK) room ‘Amazon’ ‘Yangtze’ ‘WF Theatre’ ‘Mississippi’ 1100 Wed-A7-c1 Wed-B8-inv Wed-C5-c3 Wed-D2-c1 Etching through nanostencils for high Strategies for selective atomic layer TEM study of Schottky junctions for Microreactor with integrated micro- resolution and large-scale patterning of deposition on patterned substrates reconfigurable silicon nanowire devices mixer and heated nebulizer for mass optical nanoantenna arrays A.J.M.Mackus et al. S. Banerjee et al. spectrometric chemical reaction Valentin Flauraud et al. analysis G.Scotti et al. 1115 Wed-A7-c2 Wed-C5-c4 Wed-D2-c2 Direct fabrication of thin film layer Fabrication of a suspended silicon Resealable flowcells with integrated MoS2 field-effect nanoscale transistors nanowire single hole transistor by oxygen sensing layers for enzymatic by oxidation scanning probe focused ion beam implantation reaction studies lithography J.Llobet et al. Martina Viefhues et al. Francisco M. Espinosa et al. 1130 Wed-A7-c3 Wed-B8-c1 Wed-C5-c5 Wed-D2-c3 Lift-off processes for avoiding substrate Area selective growth of chalcogenide GaAs/InSb core-shell nanowires and Monolithically integrated photonic damage from charged particles during materials onto patterned substrates by InSb nanotubes platform for Point-of-Need application lithography chemical vapor deposition Torsten Rieger et al. in food safety Martin Spieser et al. Ruomeng Huang et al. Μ.Angelopoulou et al. 1145 Wed-A7-c4 Wed-B8-c2 Wed-C5-c6 Wed-D2-c4 Field Emission Scanning Probe Nanocrystal Self-Assembly of CdSe/CdS Fabrication and characterization of A Capillary-Driven Microsystem for Lithography and Etching at Cryogenic Hollow Domes in quasi contact-free tunnel barriers in a multi-walled carbon DNA Amplification Direct from Whole Temperatures – A Closed Loop conditions nanotube formed by focused ion beam Blood Technology towards beyond CMOS Angelo Accardo et al. technique Benjamin Jones et al. Device Manufacturing H. Tomizawa et al. M.Kaestner et al. 1200 Wed-A7-inv Wed-B8-c3 Wed-C5-c7 Wed-D2-c5 Advanced Scanning Probe Lithography Fabrication of High-resolution, Self- Improving the Double Layer Periodic convection of superparamag- A.Knoll aligned Palladium Electrodes for Capacitance of Silicon Nanowire Arrays netic beads within a microfluidic Nanoresonators with Room Temperature Ionic Liquids channel by interlocked, electroplated Laura Vera Jenni et al. Abdurrahman Shougee et al. structures activated by a static field Thies Jan-Wilhelm et al. 1145 Wed-B8-c4 Wed-C5-c8 Wed-D2-c6 Crystallinity variations over the length Optimization of 3-D N-channel Twin Nanoimprinted photonic crystal slab of vertically aligned carbon nanotubes Silicon Nanowire MOSFET sensor for label-free diffusion grown by chemical vapour deposition Izzati Omar et al. monitoring S. Vollebregt et al. Kristian Tølbøl Sørensen et al. 1230-1330 Lunch Break, lunch served in the Exhibition Area

Wednesday Afternoon 23 September 2015 session A1. Photo Lithography C3. Meta Materials and their C5.3. μ/nano-devices for D4. Micro and Nanofluidics for Chair: Paul Alkemade (TU Delft, NL) Fabrication Phys.Science - Instrumentation Biology and Life Sciences Chair: Anders Kristensen (DTU, DK) and Imaging Chair: Albert van der Berg (Univ. Chair: Richard Koops (VSL, NL) Twente, NL) room ‘Amazon’ ‘Yangtze’ ‘WF Theatre’ ‘Mississippi’ 1330 Wed-A1-c1 Wed-C3-inv Wed-C5-c9 Wed-D4-c1 Towards Single Photon Lithography Recent progress in hyperbolic, chiral Dopant Imaging of Power Preparation of highly porous PLGA Hilde Hardtdegen et al. and 3D metamaterials: Physics, Semiconductor Device Cross Sections microparticles using droplet fission and Fabrication and Applications U. Gysin et al. gelatin porogen Minkyung Kim et al. Chul Min Kim et al. 1345 Wed-A1-c2 Wed-C5-c10 Wed-D4-c2 Fabrication of high-aspect-ratio Experimental system combined with a SU-8 micro-pillars suspended on Si3N4 polarizers with Displacement Talbot micromachine and double-tilt TEM membranes: a superhydrophobic chip Lithography holder for in-situ X-ray diffraction studies on Christian Dais et al. Takaaki Sato et al. bio-soft matter A.Accardo et al. 1400 Wed-A1-c3 Wavelength Selective Metamaterial Wed-C5-c11 Wed-D4-c3 Through-Wafer Photolithographic Absorber for Thermal Detectors Microfabrication of an integrated Active porous valves for droplet flow Exposure for Control of Resist Sidewall A. Shoshi et al. photoconductive switch and Ultrafast manipulation in open channel fluidics Profile Beam Blanker N. Vourdas et al. L. Wang et al. Gerward Weppelman et al. 1415 Wed-A1-c4 Wed-C3-c2 Wed-C5-c12 Wed-D4-c4 High coherency hybrid-ArF laser: An Fabrication of Chiral-Molecular@ Nano NV-center diamond cantilevers: Microfluidic Chips for Studying Mass application to interference lithography particle Complex Materials with Great extending the range of available Transport across Permeable Vascular Hiroaki Oizumi et al. Chiroptical Effect in Visible Region fabrication methods Walls in Drug Delivery Duan Xie et al. J. Kleinlein et al. Chiara Manneschi et al. 1430 Relocation to ‘WF Theatre’ 1445 Wed-Keynote-4 Advanced centrifugal microfluidics for Point-of-Care Applications ‘WF Theatre’ Chair: Urs Staufer (TU Delft, NL) Roland Zengerle 1530

Poster session 2 (odd numbers) / Exhibition

1800 End of poster session 2 / Individual transfer to Conference Dinner location ‘Madurodam’

Thursday Morning 24 September 2015 830 ‘WF Theatre’ Award Ceremony Chairs: Hubert Brückl (Danube University Krems , AT) MNE-Fellow (sponsored by ASML): Emile van der Drift and Dieter Kern (Univ. Tuebingen, DE) Micro Electronic Engineering Young Investigator Award (sponsored by Elsevier): Stephan Keller Thu-MNE-Fellow Quantitative technology, a joy forever ‘WF Theatre’ Chair: Emile van der Drift 915 Relocation session A4.1. Soft Lithography 1 Young Investigator Award C1.3. MEMS/NEMS for Energy D1.1. Mechanical Sensing Chair: Jens Gobrecht (PSI, CH) lecture, Hot news - Late News Harvesting Elements Session Chair: Phil Prewett (OSC, UK) Chair: Murali Ghatkesar (TU Delft, NL) Chair: Evangelos Gogolides (Demokritos, GR) room ‘Amazon’ ‘WF Theatre’ ‘Yangtze’ ‘Mississippi’ 930 Thu-A4-c1 Thu-MEE-YIA AWARD LECTURE Thu-C1-c1 Thu-D1-c1 A new photo-curable PDMS with Biomaterial Microsystems for Drug Design and fabrication of trapezoidal In-line picogram-resolution excellent master replication fidelity for Delivery and Bioelectrochemistry organic micro-beams for mechanical microchannel resonator for protein fast fabrication of working stamps in S.S. Keller et al. energy harvesting from environment al adsorption measurement operating at soft UV-NIL applications. sources atmospheric pressure Manuel W. Thesen et al. H. Nesser et al. J. Groenesteijn et al. 945 Thu-A4-c2 Thu-C1-c2 Thu-D1-c2 Athermal nanoimprint lithography AlN layers for bistable energy Fabrication of holder-type based on azobenzene resist harvesting microdevices piezoresistive cantilever for embryo Christian Probst et al. R. A. Dias et al. mass measurement Hayato Sone et al. 1000 Thu-A4-c3 Hot News – Late News Session Thu-C1-c3 Thu-D1-c3 Injection Moulding of hard and soft Triboelectric nanogenerator with The Helium Ion Microscope as an ideal substrates with Micro- and honeycomb-like nanofiber complement of FIB technologies for Nanostructures. microstructures one nanometre-scale graphene Anwer Saeed et al. Shin Jang et al. nanopore fabrication For program see App J. Gierak et al. 1015 Thu-A4-c4 Thu-C1-c4 Thu-D1-c4 High volume soft-stamp NIL, tooling AlN-based flexible piezoelectric skin for Iron Oxide Nanoparticle Assembly on and process design energy harvesting from human motion DNA Origami M.A. Verschuuren et al. Francesco Guido et al. Daniel Schiffels et al. 1030-1100 Break/Exhibition session A9. Novel Techniques B1. Pattern Transfer C1.4. MEMS/NEMS graphene D1.2. Sensing Systems Chair: Andreu Llobera (CSIC, ES) Chair: Raphael Taboryski (DTU, DK) devices Chair: Zoran Djuric (SASA, SRB) Chair: Michel Despont (CSEM, CH) room ‘Amazon’ ‘Yangtze’ ! ‘WF Theatre’ ! ‘Mississippi’ 1100 Thu-A9-inv Thu-B1-c1 Thu-C1-c5 Thu-D1-inv Wafer scale 3D-nanofabrication based SnOx high-efficiency EUV interference Graphene membrane fabrication Three-dimensional (3D) Scaffolds for on retraction edge lithography, corner lithography gratings towards the ultim- methods for NEMS applications with Bioartificial Organ-on-a-Chip Systems lithography and anisotropic wet ate resolution in photolithography sealed cavities and Bioelectroanalysis etching of silicon Elizabeth Buitrago et al. S.Wagner et al. S. Mohanty et al. 1115 Erwin J.W. Berenschot et al. Thu-B1-c2 Thu-C1-c6 High aspect ratio nanopatterning for x- Modification of boronnitride-encapsula ray diffractive optics ted graphene using a focused He beam Richard C. Tiberio et al. Gaurav Nanda et al. 1130 Thu-A9-c1 Thu-B1-c3 Thu-C1-c7 Thu-D1-c5 Development of Paper-based Effects of thermal nanoimprint P3HT:PCBM and graphene inks for Highly Sensitive Raman analysis and Photolithography for Device lithography on the mechanical organic solar cells electrical recording of living cells using Applications properties of PMMA: a comparison J. Kastner et al. vertical plasmonic nanoantennas Michael Cooke et al. between standard NIL and ultrafast NIL Michele Dipalo et al. Michele Pianigiani et al. 1145 Thu-A9-c2 Thu-B1-c4 Thu-C1-c8 Thu-D1-c6 High aspect ratio 10-nm-scale Patterning of diamond like carbon films Piezoresistive transduction of Fast prototyping of plastic microfluidic nanoaperture arrays with template- using silicon containing thermoplastic graphene-based devices with Vis/IR transparent view- guided metal dewetting resist (SiPol) as hard mask nanoelectromechanical systems port for live cell imaging Ying Min Wang et al. D. Virganavicius et al. Madhav Kumar et al. Giovanni Birarda et al. 1200 Thu-A9-c3 Thu-B1-c5 Thu-C1-inv Thu-D1-c7 Magnetic assembly of microspheres Polymer injection molding of hard X- Transfer-Free Fabrication of Large-Area A disposable miniaturized blood into ordered two-dimensional arrays ray refractive optics Nanocrystalline Graphene extraction device with flexible parylene Kanna Aoki et al. F. Stöhr et al. Nanoelectromechanical Switch Array microneedles Jian Sun et al. W.-H. Hung et al. 1215 Thu-A9-c4 Thu-B1-c6 Thu-D1-c8 Approach for novel 3-dimensional Pattern Fidelity in 3-D Structures during Automated characterization of imaging by built-in lens mask Pattern Transfer from Atomically Biopolymer Degradation with a Blu-Ray lithography Precise Templates Readout Platform Toshiki Tanaka et al. Joshua B. Ballard et al. Andrea Casci Ceccacci et al. 1230-1330 Lunch Break, lunch served in the Exhibition Area

Thursday Afternoon 24 September 2015 session A4.2. Soft Lithography 2 B2. Plasma Etching C2. Micro and Nano Fluidic D1.3. Optical Sensing Elements Chair: Regina Luttge (TU-Eindhoven, NL) Chair: Sandra Wolff (TU Kaiserslautern, Systems Chair: Massimo De Vittorio (Univ. DE) Chair: Marko Blom (Micronit, NL) Salento, IT) room ‘Amazon’ ‘Yangtze’ ‘WF Theatre’ ‘Mississippi’ 1330 Thu-A4-inv Thu-B2-c1 Thu-C2-c1 Thu-D1-c9 Photonic Crystals for visible light Fabrication of shape memory / silicon Effect of Different Fluids on Rectified Microring resonator based evanescent fabricated by reverse nanoimprinting bimorph nanoactuators Motion of Leidenfrost Droplets on field sensor with homogeneously of a high refractive index material Franziska Lambrecht et al. Micro/Sub-Micron Ratchets integrated P-I-N detector C. Pina-Hernandez et al. Jeong Tae Ok et al. Alina Samusenko et al. 1345 Thu-B2-c2 Thu-C2-c2 Thu-D1-c10 Supercritical CO2 etching of metal thin Lateral porous silicon membranes Monitoring of the extracellular changes films for magnetoresistive memory fabricated within 2D microchannels in the cell medium by SERS analysis processing through local ion implantation Victoria Shalabaeva et al. Md Rasadujjaman et al. Yingning He et al. 1400 Thu-A4-c5 Thu-B2-c3 Thu-C2-c3 Thu-D1-c11 Smart elastomer substrates for flexible Plasma Directed Assembly: A non- Luminescent and absorptive metal- Fabrication and application of ultrathin systems lithographic nanoassembly technology coated droplets for micro-velocimetry gold nanohole films as complementary Rian Seghir et al. for polymeric nanodot and silicon Olivier Mesdjian et al. dual sensing platform nanopillar fabrication Raphael F Tiefenauer et al. Athanasios Smyrnakis et al. 1415 Thu-A4-c6 Thu-B2-c4 Thu-C2-c4 Thu-D1-c12 Multiplexed microfluidic stamp inking Low-damage cryogenic etch of porous A novel piezo actuated high stroke Label-free biosensing of ErbB2 protein for automated micro-contact printing organosilicate low-k dielectric polymer membrane for micropumps marker detection by an organic process L. Zhang et al. Ardavan Shabanian et al. distributed feedback laser based on Aurore Estève et al. perylenediimide derivative Aritz Retolaza et al. 1430 Relocation to ‘WF Theatre’ 1445 Thu-Keynote-5 Promises, Problems, and Practicalities of Nanomaterial Electronics ‘WF Theatre’ Chair: Ageeth Bol (TU Eindhoven, NL) Aaron D. Franklin 1530 ‘WF Theatre’ Chair: Kees Hagen (TU Delft, NL) Closing remarks and Farewell

Tuesday Morning 22 September 2015

Plenary Session 1 Lecture Hall: World Forum Theatre Session Chairs: U. Staufer and C.W. Hagen time 0830 Welcome and Opening of the Conference 0900 Tue-Keynote-1 Nano-Lithography P. Kruit Delft University of Technology This talk will guide the audience through the world of lithography by visiting 4 Dutch producers of lithography equipment: FEI Company in Eindhoven, VISTEC (RAITH) in Best, MAPPER in Delft and ASML in Veldhoven. On the way, we will discuss some principles such as the Resolution - Line Edge Roughness – Sensitivity triangle and the effects of resolution versus positioning accuracy on data content in a pattern. 0945 Tue-Keynote-2 Nano Fountain Probe Technology for In Vitro Single Cell Studies H. Espinosa Northwestern University We present a broadly-applicable Nanofountain Probe for single cell delivery and analysis using biomolecules and functional nanoparticles. It is a scanning probe nanodelivery tool which makes use of on-chip fluid reservoirs and integrated microchannels to deliver liquid solutions to sharp- apertured dispensing tips. It allows for both sub-100-nm nanopatterning on substrates for subsequent cell culture, as well as direct biomolecular delivery inside cells. The spatial and force resolution of the atomic force microscope are leveraged to control the probe with nanometer and nanoNewton precision during nanopatterning and in vitro transfection experiments.

1030 Break and Opening of the Exhibition

Cluster A - Micro and Nano Patterning A3 - Electron and Ion Beam Lithography Lecture Hall: Amazon Session Chair: J. Alexander Liddle (NIST, USA) 1100 Tue-A3-c1 Optimization of electron beam lithographic exposure of PMMA implantation masks with high aspect ratio covering

a topographic step Jens Bolten, Andreas Prinzen, Heiko Füser, Caroline Porschatis, Thorsten Wahlbrink, Anna Lena Giesecke, Heinrich Kurz AMO GmbH, AMICA, Aachen, Germany An electron beam lithography process has been optimized for the definition of narrow and dense implantation in a thick PMMA layer. They cover a 175nm topographic step and are used to create an optical modulator based on a MZI structure and interdigitated doped regions. Optically functional devices have been realized. 1115 Tue-A3-c2 Toward Less Than 50 nm-Line and Space Negative Tone Pattern Fabrication by Electron Beam Lithography using NEB-22 Makoto Okada and Shinji Matsui Univ. of Hyogo, Japan We carried out electron beam lithography using a diluted NEB-22. The 40 nm-line and 70 nm-space pattern was fabricated. The pattern height was 95 nm. 1130 Tue-A3-c3 Characterization for the photomask fabrication based on a novel technique of high-resolution with a non-chemically amplified resist and a post-exposure bake Hidetatsu Miyoshi a b, Jun Taniguchi a a Tokyo University of Science, Japan; b Intel Corporation, Tsukuba-shi, Ibaraki-ken, Japan A novel high-resolution technique has been developed for the fabrication of photomasks. we applied the PEB method from non-CAR resists, and demonstrated its feasibility as a high-resolution technique of the order of 20nm. The goal of this research has been to explore the mechanisms involved in it. 1145 Tue-A3-c4 Focused ion beam current density profile derivation from single crystal amorphization region widths – analysis method Yuval Greenzweig a, Yariv Drezner a, Shida Tan b, Richard H. Livengood b, Amir Raveh a aIntel Israel (74) Ltd., Haifa, Israel; bIntel Corporation, Santa Clara, CA We present a method for deriving focused ion beam current distributions based on amorphization region widths of line scans on a single crystal. The method gives a beam parameterization as a sum of a narrow Gaussian representing resolution, a wider “tail” Gaussian, and a lower current peripheral exponential tail.

1200 Tue-A3-c5 Proximity Effect Quantification and Dose Optimisation for High Resolution Helium Ion Beam Lithography Xiaoqing Shi a, Philip Prewett b, Ejaz Huq b, Darren M Bagnall c, Stuart A Boden a, a University of Southampton, UK; b Oxford Scientific Consultants Ltd., Oxfordshire, UK; c The University of New South Wales, Sydney, Australia We present the latest results using helium ion microscope for high resolution lithographic patterning of PMMA, an EBL benchmark resist. Proximity effect was quantitatively studied along with a systematic look into dose optimisation. Well- defined lines with widths down to 20 nm were achieved in 20 nm thick PMMA films. 1215 Tue-A3-c6 Fabrication of metallic nanostructures by character projection based electron beam lithography and hard mask lift-off technique Torsten Harzendorf a, Thomas Flügel-Paul a, Uwe D. Zeitnera b a Fraunhofer IOF, Jena, Germany; b University of Jena, Germany Plasmonic effects at metallic nanostructures are widly used in the field of nanophotonics. For the realization of application relevant optical elements the nanostructuring must be performed with the corresponding accuracy at large scale, which is realized by fast electron beam technology and a lift- off process utilizing a hard mask.

1230 Lunch Break until Lunch served in the Exhibition Area 1330

Cluster B - Micro and Nano Fabrication B4 - 3D Micro Manufacturing and Micro Printing Lecture Hall: Yangtze Session Chair: Massimo Gentili (Fondazione Bruno Kessler, IT) 1100 Tue-B4-c1 Inversed pyramid-shaped cave arrays with nano-opening cap fabricated by laser interferometric lithography and wet etching Weijie Sun, Shibing Tian, Baogang Quan, Changzhi Gu, Junjie Li Beijing National Laboratory for Condensed Matter Physics, China We fabricate a new sub-micron 3D structure of inversed pyramid-shaped cave with nano-opening cap, having a tunable size in the cave and nano-opening, which further

extend the application field of conventional inversed pyramid-shaped cave structure. 1115 Tue-B4-c2 Novel Open Channel Microneedle Array Fabrication by 3D Laser Lithography and Micromoulding Techniques Zahra Faraji Rad a, b, Graham. J. Davies a, Lynne. E. Bilston a, Carl. J. Anthony b, Philip. D. Prewett b, Robert. E. Nordon a a University of New South Wales, Sydney, Australia; bUniversity of Birmingham, UK 3D laser lithography is used to manufacture microneedle master molds with optimal geometric designs. Thermoplastic microneedles are accurately replicated at submicron resolution from the master by soft embossing. Optimal microscale designs are based on structural and fluid dynamic simulation rather than the manufacturing constraints imposed by machining or etching processes. 1130 Tue-B4-c3 High throughput fabrication of hierarchical photonic nanostructures N. Schneider a, A. Striegel a, A. Kolew a, M. Schneider a, J. Leuthold b, M. Worgul a a Karlsruhe Institute of Technology, Germany; b ETH Zurich, Switzerland We present a flexible replication process for photonic structures inspired by Morpho butterflies which is suitable for large area fabrication. By combining hot embossing and thermoforming with the unique abilities of shape memory polymers we demonstrate the successful fabrication of complex geometries with undercuts on the micro- and nanoscale. 1145 Tue-B4-c4 Fabricating high density metal structures using a six-fold line multiplying scheme J. Bosgra, E. Kirk, V.A. Guzenko, C. David Paul Scherrer Institut, Switzerland Using an edge defined lithography technique, we developed and applied a six-fold line multiplying scheme to fabricate Fresnel zone plates having an outermost zone width of 9 nm. Using this method, the density of structures is not limited anymore by e-beam lithography, but only by atomic layer deposition. 1200 Tue-B4-c5 Monolithic micro-optical components: advancing from novel master fabrication methodology towards high-volume manufacturing schemes L. Jacot-Descombes a, V.J. Cadarso b, A. Schleunitz a, S. Grützner a, J. Brugger c, H. Schift b, G. Grützner a

a Micro resist technology GmbH, Berlin, Germany; b PSI, Switzerland; cEPFL, Lausanne, Switzerland This work combines UV-nanoimprint lithography approaches and inkjet printing for the fabrication of microlens arrays containing lenses with different characteristics. The microlens arrays are subsequently replicated by UV-imprint and the resulting monolithic microlens arrays are compared with the initial printed ones. 1215 Tue-B4-c6 An effective approach for reducing surface roughness of PMMA in grayscale EBL by thermal radiation induced local reflow Chen Xu , Sichao Zhang , Jinhai Shao, Yifang Chen Fudan University, Shanghai, China We have developed an effective method to reduce surface roughness on PMMA by thermal radiation induced local reflow without de-shaping the whole profile. 50% of surface roughness reduction has been succeeded which has been applied to the multilayer Aztec profiles with super smooth surface on all the deep steps.

1230 Lunch Break until Lunch served in the Exhibition Area 1330

Cluster C - Micro and Nano Systems and Devices C1.1 - MEMS/NEMS Sensing 1 Lecture Hall: World Forum Theatre Session Chair: Sternberg Andris (Univ. of Latvia, LV) 1100 Tue-C1-c1 Fabrication, characterisation and behaviour of very low- power gas sensing devices based on single nanowires Jordi Samà a, Juan Daniel Prades a, Olga Casals a, Sven Barth b, Joaquin Santander c, Carles Cané c, Isabel Gracia c, Francisco Hernández-Ramírez d, Albert Romano-Rodriguez a a Universitat de Barcelona, Spain; b Technical University of Vienna, Austria; c Institut de Microelectrònica de Barcelona, Bellaterra, Spain; d IREC, and Universitat de Barcelona, Spain Single metal-oxide nanowires can be contacted and operated in the self-heating mode, where the measuring current both provides the resistance and the temperature required for the correct operation of the sensor. In this work we will described the fabrication, characterisastion, the benefits and challenges of this technology. 1115 Tue-C1-c2 Integration of ZnO nanostructures onto a micro hot plate for gas sensing

A. Tommasi a, S.L. Marasso c, D. Perrone b, D. Mombello a, S. Benetto a, M. Cocuzza a, b, c , C.F. Pirri a,b , R. Mosca c, A. Zappettini c, D. Calestani c, M. Villani c. a Politecnico di Torino, Chivasso (Turin), Italy; b Italian Institute of Technology, Torino, Italy; c CNR-IMEM, Parma, Italy A novel MEMS based sensor that integrates ZnO tetrapods nanostructures (TPs) was successfully achieved using a cost- effective patterning method and a homogeneous dispersion of TPs. A TPs layer on a thin Si3N4 membrane allows for increasing the sensing performance and obtaining a highly sensitive sensor, while decreasing power consumption. 1130 Tue-C1-c3 Integrated smart gas flow sensor with 2.6 mW total power consumption and 80 dB dynamic range Massimo Piotto a, Francesco Del Cesta b, Paolo Bruschi b a IEIIT-Pisa, CNR, Pisa, Italy b Dipartimento di Ingegneria dell’Informazione, Pisa, Italy Thermal flow sensor, with integrated readout interface, designed to obtain very low power consumption while maintaining high dynamic range, is proposed. The device was obtained by applying post-processing to chips designed with a STMicroelectronics process. A resolution by power- consumption product of 2.6 mW×mm/s is obtained. 1145 Tue-C1-c4 Flexible Magnetoresistive Devices with High-Performance Sensors H. Fonseca a, E. Paz a, R. Ferreira a, P. P. Freitas a,b, J. Gaspar a a International Iberian Nanotechnology Laboratory, Braga, Portugal; b INESC-MN/Institute for Nanosciences and Nanotechnologies, Lisbon, Portugal We report on the integration of MTJ sensors with magnetoresistance responses above 150% on flexible substrates. These are able to bend and conform to non- planar geometries, non-conformal and hard-to-reach regions for magnetic sensors processed in conventional rigid substrates, paving the way for new spintronic applications. 1200 Tue-C1-c5 High Frequency self-sensing piezoresistive SPM cantilevers with a novel design W. Engl 1, T. Sulzbach 1, C. Penzkofer 2 1 NanoWorld Services GmbH, Erlangen, Germany 2 Nantools GmbH, München, Germany We developed ultra-short cantilevers with integrated piezoresistive deflection sensor with resonance frequencies up to 5 MHz. They have a novel vertical electrical design which enables them to fit easily into commercial AFM’s. AFM

Topography measurements with these probes in non-contact mode showed atomic resolution in z-direction. 1215 Tue-C1-c6 MEMS mechanism for resonance frequency tuning Nao Takeda , Motoaki Hara , Hiroki Kuwano Tohoku university, Sendai, Japan A MEMS mechanism for resonance frequency tuning was newly proposed. In this system, a spiral-shaped cantilever and MEMS stoppers were integrated. The stoppers can operate as a frequency tuner for the vibrating cantilever, and can widen the dynamic range with low power consumption.

1230 Lunch Break until Lunch served in the Exhibition Area 1330

Cluster D Micro and Nano Technology for Bio/Life Sciences D5 - System Design and Fabrication Lecture Hall: Mississippi Session Chair: Joan Bausells (CSIC, ES) 1100 Tue-D5-inv Technologies for point-of-care diagnostics Matthias Irmscher1, Jeroen Nieuwenhuis2 1Philips Group Innovation, Research 2Philips Healthcare Incubator, Handheld Diagnostics We will present the Philips Minicare I platform and discuss the technologies that underlie its architecture which in turn is driven by market needs. In particular, we will discuss the implications of using capillary transport as the basic mechanism of fluid transport and will show how ultrasensitive detection of tens of molecules is achieved by contactless optical means. By juxtaposing general architectural principles with concrete examples, we will sketch the creation of a platform that can live up to the requirements of modern decentralized healthcare. 1130 Tue-D5-c1 Fabrication of a smart contact lens platform for the diagnosis of dry eye disease Sajina Tinku 1,2, Ravinder Dahiya 3, Leandro Lorenzelli 2 1University of Trento, Italy; 2 Fondazione Bruno Kessler, Trento, Italy; 3University of Glasgow, UK Functional contact lenses have recently attracted attention as a suitable means to exploit the characteristics of the human eye to diagnose diseases and for drug delivery. In this work, we propose a basic electrode structure to be included into

the smart contact lens platform to detect dry eye syndrome. 1145 Tue-D5-c2 Top-down Zinc Oxide Nanowires by Ion Beam Etching for Biosensing Applications Kai Suna, I.Zeimpekisa, N.M.J. Ditshegoa, C. Hua, O. Thomasb, M.R.R. de Planquea, H.M.H. Chonga, H.Morgana, P. Ashburna a University of Southampton, UK bOxford Instruments Plasma Technology, Yatton, Bristol, UK As an alternative to expensive Si nanowire sensors, we report a top-down ZnO nanowire sensor using ALD and ion beam etch. It gives a pH sensitivity of 250 mV/pH. The process thermal budget of 190°C enables it to be fabricated on low- cost glass substrate. 1200 Tue-D5-c3 On-chip glass microfluidic trap and storage of helical magnetic microrobot Barbot Antoine, Decanini Dominique, Hwang Gilgueng LPN-CNRS, Marcoussis, France One major challenge of mobile microrobots toward in-vitro or in-vivo applications is their controllable trapping and storing capabilities in microfluidics. We developed on-chip glass microfluidic trap and storage by pneumatic actuation for helical magnetic microrobots. Using the system, we successfully demonstrated temporal evolutions of their swimming characteristics. 1215 Tue-D5-c4 Fast and Large Area Fabrication of Hierarchical Super Hydrophobic Silicon Surfaces Ghio S.1, Paternoster G.2, Belluti P.2, Boscardin M.2, Pugno N.1,2,3 1 University of Trento, Italy; 2 Fondazione Bruno Kessler, Povo (TN), Italy; 3 Queen Mary University of London, London, U.K. Several studied, based on nature observation, have highlighted how hierarchical patterns show a substantial improvement for hydrophobic properties. So far only rather long processes have been proposed to generate hierarchical structures. This work aims to present fast and repeatable process to produce silicon based hierarchical structures on large surfaces. 1230 Lunch Break until Lunch served in the Exhibition Area 1330

Tuesday Afternoon 22 September 2015

Cluster A - Micro and Nano Patterning A5 - Materials for lithography, resists and resist processing Lecture Hall: Amazon Session Chair: Robert Kirchner (PSI, CH) time 1330 Tue-A5-inv Resist material options for extreme ultraviolet lithography T. Kozawa Osaka University, Ibaraki, Osaka, Japan With progress in EUV sources, the demand for improving resist performance became increasingly strong. Even in the sub-10-nm high-volume production, the mechanism of chemical amplification is still attractive. Shot noise effect is a significant concern for highly sensitive materials. We have investigated the conversion processes in resist materials using a time-resolved spectroscopy system and an EUV exposure tool. The material options for EUV lithography will be discussed. 1400 Tue-A5-c1 Characterization of the anisotropy of semi-crystalline polymers after nanoimprint by spectroscopic ellipsometry Si Wang, Johannes Rond, Christian Steinberg, Marc Papenheim, Hella-Christin Scheer University of Wuppertal, Germany Typically, semi-crystalline polymers feature electrical and optical anisotropy. Thus, spectroscopic ellipsometry as an optical method is suitable to characterize such materials. In case of P3HT an anisotropic factor of 2.3 is obtained. Our intention is to verify the anisotropy with samples after thermal nanoimprint. 1415 Tue-A5-c2 Highly extended PDMS stamp life-time enabled by the new organic photo-curable soft NIL resist “mr-NIL210” Martin Messerschmidt a, Andrew Greer b, Florian Schlachter c, Julian Barnett c, Manuel W. Thesen a, Nikolaj Gadegaard b, Gabi Grützner a a Micro resist technology GmbH, Berlin, Germany; b University of Glasgow, UK; c AMO GmbH, Aachen, Germany We report on a newly developed organic photo-curable soft NIL resist “mr-NIL210”, which renders a significantly extended PDMS stamp life-time addressing the requirements for high-volume manufacturing. Moreover, “mr-NIL210” reveals an excellent plasma etch performance for many different substrate materials like silicon, sapphire, titanium, etc.

1430 Tue-A5-c3 Pattern collapse mitigation in inorganic resists via a polymer freeze technique Tero S. Kulmala, Roberto Fallica, Elizabeth Buitrago, Yasin Ekinci Paul Scherrer Institute, Villigen, Switzerland Shrinking feature sizes result in resist pattern collapse due to capillary forces. We present a pattern collapse mitigation technique via polymer encapsulation of the resist and subsequent removal of the polymer by dry etching. As the sample isn’t dried, no pattern collapse due to capillary forces can occur. 1445 Tue-A5-c4 Multiphoton Laser Ablation Lithography (MP-LAL) using 375 nm Continuous Wave Laser Enabling Patterning down to the 30 nm Regime and beyond Theodoros Manouras a,b,c, Evangelos Angelakos c,e, Maria Vamvakaki a,d, Panagiotis Argitis b a FORTH, Heraklion, Greece; bNCSR Demokritos, Greece; c Opticon ABEE, Tripoli-Peloponnesus, Greece; d University of Crete, Heraklion, Greece; eNanotronics inc, Palo Alto- California, USA Multi-photon Laser Ablation Lithography (MP-LAL) is demonstrated, where a CW diode laser (375nm) is used to expose a perylene-doped PMMA film. Perylene absorbs at the exposure wavelength, where the polymer is transparent. The non-linear nature of this process allowed sub-25nm patterning.

1500 Break and Exhibition

Cluster B - Micro and Nano Fabrication B3 -Electron/Ion Beam deposition, related technologies, applications Lecture Hall: Yangtze Session Chair: Claus J. Burkhardt (NMI, DE) time 1330 Tue-B3-c1 Mimicking the iridescent color of free-standing Morpho butterfly wing scales fabricated by e-beam lithography Sichao Zhang and Yifang Chen Fudan University, Shanghai, China We report a technical breakthrough recently achieved in the fabrication of aligned lamellae multilayer on nanopillars to mimic the coloration of Morpho butterfly wing scales by a novel process based on electron beam lithography and alternating development/dissolution. Careful characterization of the artificial structures by spectral measurements were

carried out 1345 Tue-B3-c2 Nanomagnets as building blocks of logic gates - 3D nano manufacturing of nanomagnet assemblies by electron beam induced deposition H.D. Wanzenboeck a, M.M. Shawrav a, M. Gavagnin a, S. Wachter a, P. Taus a, A. Steiger-Thirsfela a, M. Stoeger-Pollach a, A. Persson b, K. Gunnarsson b, P. Svedlindh, E. Bertagnolli a a Vienna University of Technology, Austria b Uppsala University, Sweden Focused electron beam induced deposition (FEBID) has the potential to fabricate 3-dimensional nanomagnetic devices. Vertical magnetic nanopillars have been used for high‐aspect ratio MFM tips. Advanced 3-dimensional NML gate structures featuring both in-plane and out-of-plane magnets have been realized. Future applications will be discussed 1400 Tue-B3-c3 Photoluminescence Emission from a nanofabricated Scanning Probe Tip Made of Epitaxial Germanium M.Bollani a, V. Giliberti b, E. Sakat c, L. Baldassarre d, M. Celebrano c, J. Frigerio e, G.Isella e, M. Finazzi c, M. Melli f, A. Weber-Bargioni f, S. Cabrini f, P. Biagioni c, M. Ortolani b a IFN-CNR, LNESS laboratory, Como, Italy; b Sapienza University of Rome, Italy; c Politecnico di Milano, Milano, Italy d Italian Institute of Technology, Rome, Italy; e Politecnico di Milano, Como, Italy; f Lawrence Berkeley National Labs, CA We report on the experiment performed when the Ge tips , fabricated by a combination of EBL and FIB, was mounted in a confocal micro-PL setup, where the illumination wavelength of 1060 nm excites electron-hole pairs in the Ge tip that subsequently recombine at the direct gap of Ge. 1415 Tue-B3-c4 Parallel imaging in a 196-Beam SEM Y.Ren, C.W. Hagen, P. Kruit Delft University of Technology, The Netherlands A Multi-Beam Scanning Electron Microscope with 196 beams is developed for high throughput imaging in different applications, such as wafer inspection, biological research etc. Recent experimental results on Secondary Electron imaging and Transmission Electron imaging are presented here. 1430 Tue-B3-inv Focused electron beam induced deposition of metallic binary alloy nanostructures employing a heteronuclear precursor M. Huth a, F. Porrati a, R. Sachser a, L. Keller a, M. Zoerb a,

H. Plank b, C. Gspan b, M. Pohlit a, J. Müller a, S. Barth c a Goethe University, Frankfurt, Germany; b Graz University of Technology, Austria; c Vienna Institut of Technology, Austria Here we show that magnetic alloy nanostructures can be fabricated reproducibly by FEBID with welldefined elemental composition and high metal content by using a heteronuclear precursor.

1500 Break and Exhibition

Cluster C - Micro and Nano Systems and Devices C1.2 - MEMS/NEMS Fabrication and Reliability Lecture Hall: World Forum Theatre Session Chair: Rebecca Cheung (Univ. of Edinburgh, UK) time 1330 Tue-C1-c7 Fabrication of a freestanding nanofluidic gas channel between two metal membranes G.J. Rademaker, C.T.H. Heerkens, L.Van Kouwen, C.W. Hagen, P. Kruit Delft University of Technology, The Netherlands The Nano-Aperture Ion Source ionizes gas in a nanochannel between two platinum membranes. The channel is created by releasing an amorphous silicon sacrificial layer by a SF6 plasma. The results of these chips look promising. The fabrication process flow will be discussed in more detail. 1345 Tue-C1-c8 Hydrothermal growth of c-axis nanorod-based ZnO films for SAW sensing applications G. Rius a, C. Perfetti a, X. Borrisé b, L. Solé b K. Abe a a Nagoya Institute of Technology, Japan b Institut de Microelectrónica de Barcelona, Spain We present 1) parametric studies of ZnO deposition by hydrothermal technique of c-axis nanorod compact films, 2) their electrical characterization and 3) a numerical model to design an operational range of resonance frequency by COMSOL Multiphysics, to assess ZnO film performance as a piezoelectric material in a SAW configuration. 1400 Tue-C1-c9 Effect of fluorine surface modification on resonance of a carbon nanoresonator fabricated by FIB/EB dual-beam lithography R. Kometani, T. Miyakoshi, E. Maeda The University of Tokyo,Japan

Relationship between fluorine surface modification using XeF2 gas and resonant properties of carbon mechanical resonator fabricated by FIB/EB dual-beam lithography. As a result, fluorination was useful to obtain carbon resonators with higher Q factor. And CFx bond on carbon surface has the important role for enhancing Q factor. 1415 Tue-C1-c10 Mass sensor utilising the mode-localisation effect in an electrostatically-coupled MEMS resonator pair fabricated using an SOI process Graham S. Wood a, Chun Zhao a, Suan Hui Pu a,b, Stuart A. Boden a, Ibrahim Sari a, Michael Kraft c a University of Southampton, UK; b University of Southampton Malaysia Campus, Malaysia; c University of Liège, Belgium In order to develop an ultrasensitive mass sensor, this work presents the characterisation of a pair of electrostatically coupled MEMS resonators and the response of the amplitude ratio at resonance to a mass imbalance, which has been introduced by removing material from one resonator with a focussed ion beam. 1430 Tue-C1-c11 Novel Saw Tooth Gate for Stiction and Pull-in Voltage Controlled Ohmic Silicon NEMS Switch L. Boodhoo a, F. Alkhalil a, H. M. H. Chong a, Y. Tsuchiya a, W. Redman-White a, T. Hasegawa b, H. Mizuta a, c a University of Southampton, UK; b National Institute for Materials Science, Japan; c Japan Advanced Institute of Science and Technology, Japan Novel saw tooth, electrostatic spike, gate design for stiction and pull-in voltage control in suspended ohmic silicon NEMS switch. Pull-in voltage reduced from 22.5V to observed voltage of 13.1V. Spike tip at point of mechanical contact results in reduced stiction; electromechanical pull- out at 5V. 1445 Tue-C1-c12 Exposing the tribological run-in of polysilicon MEMS sidewalls in sliding contact using in-situ force measurements with AFM-like resolution Jaap Kokoriana, W. Merlijn van Spengena,b a Delft University of Technology, The Netherlands b Falco Systems B.V., Amsterdam, The Netherlands We present an investigation into the tribological evolution of two polysilicon MEMS sidewalls in repeated sliding contact. We capture individual ‘friction loops’ during millions of sliding cycles with a resolution of a single chemical bond. It allows us to expose the details of the complex mechanics of sliding micromechanical contacts.

1500 Break and Exhibition

Cluster D Micro and Nano Technology for Bio/Life Sciences D6 - Applications Lecture Hall: Mississippi Session Chair: Luigi Sasso (TU Delft, NL) time 1330 Tue-D6-inv Semiconductor Nanowires, a Promising Tool for Cell Sensing C.Prinz Lund University, Sweden Semiconductor nanowires are very promising tools for biological applications. Their small dimensions, which are on the same length scale as many cell components, make them an ideal tool to probe and stimulate cells with minimal perturbation. In this talk I will review our work towards using nanowires for neural implant and cellular force sensor applications, as well as our studies towards understanding andcontrolling the cell-nanowire interface. 1400 Tue-D6-c1 Cell Direction Switching and Metastasis Screening by Designed Topography S.F. Zhou, S. Gopalakrishnan, Y.H. Xu, Y.W. Lam, S.W. Pang City University of Hong Kong, Hong Kong Designed micropatterns with strategically placed bends and short segments on gratings were developed to switch cells for forward or reversed movement. Such platforms were also used for cell screening, where closely related cell lines with different metastasis states could be distinguished by their polarization and migration directionality on these patterns. 1415 Tue-D6-c2 Substrate-Independent Immobilization of Monolayer Metal Nanoparticles Array via Self-Assembly for Efficient Antibiofilm Coatings Shang-Yi Yi, Dehui Wan, Shao Hsuan Tsao, and Shih-Yu Tseng National Tsing Hua University, Hsinchu, Taiwan We successfully immobilized metal nanoparticles array onto commercial polymer and metal surfaces via wet-chemical methods.Substrate-independent coating of Ag NPs will be very valuable, especially for antibacterial surface modification of implantable devices.Further evaluations of anti-biofilm activity and cytotoxicity test of our samples are in progress. 1430 Tue-D6-c3 In situ protein crystallization on microfabricated chips for serial crystallography.

Nadia Opara a,b, Thomas Braun b, Henning Stahlberg b, Celestino Padeste a a Paul Scherrer Institute, Villigen, Switzerland b University of Basel, Switzerland Microfabricated silicon chips with arrays of ultrathin, X-ray transparent silicon nitride windows are used as supports for protein crystallization. The high density and quality of crystals that can be obtained on a support opens new possibilities for serial protein crystallography at synchrotrons or free electron lasers. 1445 Tue-D6-c4 Rapid Prototyping for Microfluidics and Neuro-Engineering Anthony Leonard a, B.G.C. Maisonneuve a, b, T. Honegger a, b, J.Cordeiro a, b, O. Lecarme a, b, T. Thiry a, b, D. Fuard a, b, K. Berton a, b, E. Picard c, M. Zelsmann a, b, D. Peyrade a, b a Univ. Grenoble Alpes; b CNRS, LTM, Grenoble; c CEA, INAC- SiNaPS, Grenoble, France A novel process is presented here, answering the ever growing need of a low cost technique to allow rapid microfluidic prototyping. The ability of this technology to produce masks for microfluidic purpose was demonstrated, with the fabrication of a multilayered, compartmentalized microfluidic device for neuro-engineering.

1500 Break and Exhibition

1530 Tuesday Poster Session and Exhibition until even number posters 1800 Tue-A-p2 Resistance Improvement of Line End Node for Double Patterning Technology (DPT) Patterned DRAM Cell Sukho Shin a, b, Chul Lee a, Kweonjae Lee a, Hyeongsun Hong a, Gyoyoung Jin a , Byoungdeok Choi b a Samsung Electronics Co., Ltd, Republic of Korea b Sungkyunkwan University, Suwon, Republic of Korea DRAM DPT line pattern has been realized with straight-line end, which has higher contact resistance. We will suggest the method that it is able to realize small pitched line with landing pad implementable at sub 2X nm node DRAM as well as similar with former generation shaped landing pad. Tue-A-p4 Conductive layer for the e-beam lithography for all kinds of e-beam resists M. Schirmer a, U. Barth b, G. Schmidt c, R. Schmidt d, C. Kaiser a a Allresist GmbH, Strausberg, Germany; b Raith GmbH, Dortmund, Germany; c Interdisziplinäres Zentrum für Materialwissenschaften, Halle (Saale), Germany; d Technische Universität Berlin, Germany The precise structuring on insulating substrates with e-beam lithography requires a thin conductive layer on the resists. The new development Electra 92 generates such a conductive polymer layer, is easy to process and characterized by a long shelf life. Few application examples on different e-beam resists are presented. Tue-A-p6 3D Silicon Structure Preparation by Focused Ion Beam Patterning through Metal Oxide Hard Masks with Subsequent Wet Etching and Thermal Annealing for Beam Damage Recovery Marko Vehkamäki, Zhongmei Han, Mikko Ritala, Markku Leskelä Laboratory of Inorganic Chemistry, University of Helsinki, Finland Amorphous oxide thin film masks, wet etching and thermal annealing are used for blocking, limiting and recovering gallium focused ion beam induced damage to milled silicon surfaces. Nanoscale silicon trenches and fin structures are demonstrated. Tue-A-p8 Fabrication of plasmonic nanostructures on nonconductive substrates using variable-pressure electron beam lithography Jiří Babocký a, b, Jan Bok b, Jiří Fial b a Brno University of Technology, Czech Republic b TESCAN Brno, Czech Republic

Variable-pressure electron beam lithography is an alternative technique for patterning of nanostructures on nonconductive substrates. We demonstrate its benefits in fabrication of large array of plasmonic nanostructures on a glass substrate. Tue-A-p10 Estimating the base dose for arbitrary substrate materials based on Monte-Carlo-Simulations Marcus Rommel, Bengt Nilsson Chalmers University of Technology, Gothenburg, Sweden Monte-Carlo simulated PSFs are used to determine the energy contribution of backscattered electrons from the substrate to the exposure. By comparing the deposited energy in the resist for two different material stacks using simulated PSFs the dose-to-clear can be predicted with an error of less than 5%. Tue-A-p12 O2 and H2O enhanced FEBIE for low damage fabrication of nanopores in few layer graphene. Lex Pillatsch a, Alfredo R. Vaz a, c, Alexandra Szkudlarek a,d, Carlos Guerra-Nuñez a, Yucheng Zhang b, Rolf Erni b, Andrei V. Alaferdov c, Stanislav Moshkalev c, Ivo Utke a a EMPA, Thun, Switzerland; b EMPA, Dubendorf, Switzerland; c State University of Campinas, Brazil; d AGH University of Science and Technology, Kraków, Poland Structural deformation of graphene etched by O2 and H2O assisted Focused Electron Beam Induced Etching (FEBIE) is investigated by Raman spectroscopy. The etch time and O2 respectively H2O flux were optimized to get graphene nano-holes in an SEM instrument. The diameters of the holes <10nm are measured by TEM. Tue-A-p14 Proximity Effects in a Chemically Amplified Electron Beam Resist Patterned at 100 keV W.Tiddi, T. Greibe, M. Beleggia, A. Han a Technical University of Denmark, Lyngby, Denmark We assessed proximity effects in negative resist mr-EBL 6000.1 XP 90 nm thin films with 100 keV electron beam lithography. As a simple optimization, we showed how under-dosed patterns offer appreciable improvements in minimum obtainable pitch, and obtained analogous results in films thinner than 40 nm. Tue-A-p16 Nanofabrication of radial gold nanoslits by a PMMA/NEB bilayer technique for vectorial optical field Xiaqi Huang, Chialin Tsou, Jinhai Shao, Sichao Zhang, Bingrui Lu, Yifang Chen Fudan University, Shanghai, China A novel PMMA/NEB bilayer process by EBL has been developed for the fabrication of radial nanoslits in thick gold film, by using this

novel process, the thinnest lines we can get is 10nm. The conversion of light field by such a metasurface is under way. Tue-A-p18 High Accuracy Overlay Alignment for Nanoimprint lithography Applications Valentyn Ishchuk a, Elshad Guliyev a, Tzvetan Ivanov a, Thomas Glinsner b, Ivo W. Rangelow a a Ilmenau University of Technology, Germany b EVGroup, St. Florian, Austria We present a new method and a proof of concept (POC) set-up for accurately aligning a nanoimprint lithography (NIL) template with a semiconductor wafer capable for positional accuracy preferably better than 10 nm and in particular potentially approaching the 1 nm accuracy. Tue-A-p20 UV-NIL based nanostructuring of aluminum using a novel organic imprint resist demonstrated for 100 nm half-pitch wire grid polarizer Florian Schlachter a, Julian Barnett a, Ulrich Plachetka a, Christoph Nowak a, Martin Messerschmidt b, Manuel Thesen b, Heinrich Kurz a a AMO GmbH, Aachen, Germany b Micro resist technology GmbH, Berlin, Germany We report on a novel combination of a hybrid SCIL stamp with the fully organic imprint resist mrNIL-210 suitable for the nanostructuring of Al demonstrated for wire grid polarizers on large areas of up to 6” diameter. Tue-A-p22 Fabrication of residual free multi-layered nano structures on flexible substrate by Roll-based Liquid Transfer Imprints Lithography Process Mira Jeong a, Sanghee Jung a, Hyungjun Lim a,b, Jaejong Lee a,b a Korea Institute of Machinery & Materials, Daejeon, South Korea b University of Science and Technology, Daejeon, South Korea In this paper, roll-based liquid transfer imprint lithography (R-LTIL) technology is used for the fabrication of multi-layered nano structures on a large area substrate. Tue-A-p24 Large area hierarchical micro/nano structures for enhanced self- cleaning applications A. Fernandez a, A. Francone a, C. Benkel c, M. Guttmann c, B. Bilenberg d, L. H. Thamdrup d, T. Nielsen d, C. M. Sotomayor Torres a, b, N. Kehagias a a Catalan Institute of Nanoscience and Nanotechnology, Barcelona, Spain; b ICREA, Barcelona, Spain; c Karlsruhe Institute of Technology, Eggenstein-Leopoldshafen, Germany; d NIL Technology ApS, Lyngby, Denmark

We present a process, which enables the fabrication of hierarchical micro/nano structures for enhanced self-cleaning applications over a large area in a cost effective manner. Such process combines different Nano Imprint Lithography (NIL) techniques: soft NIL / reverse NIL / step-and-repeat NIL. Tue-A-p26 Defined area polymer working stamp manufacture for S&R UV-NIL by direct laser writing M. Rumler a, c, F. Michel b, M. Becker d, M. Förthner b, c, M. Rommel a, A. Schleunitz e, J. Klein e a Fraunhofer Institute for Integrated Systems and Device Technology; b University of Erlangen-Nuremberg; c Graduate School in Advanced Optical Technologies; d NanoWorld Services GmbH, Erlangen, Germany; e Micro resist technology GmbH, Berlin, Germany This work presents an alternative approach for the fabrication of polymer working stamps for S&R UV-NIL. Direct Laser Writing is used to produce OrmoStamp mesa structures with defined areas as needed e.g. for a seamless step & repeat process. Tue-A-p28 Self-relaxation characteristics of roll-to-roll imprinted nanogratings on plastic film Noriyuki Unno a, Tapio Mäkelä b, Jun Taniguchi a a Tokyo University of Science, Japan b VTT Printed and Hybrid Functionalities, Espoo, Finland The deformation characteristics of the nanopatterns fabricated by thermal roll-to-roll nanoimprint using a cellulose acetate film were investigated. We found that there were various modes of filling behaviour and the observing temperature for each mode was shifted with varying the features of the mold pattern. Tue-A-p30 Complex 3D structures via hybrid processing of SU-8 Christian Steinberg, Marc Papenheim, Si Wang, Hella-Christin Scheer University of Wuppertal, Germany To realize complex 3D structures often time-consuming and expensive process, e.g. EBL or FIB, are necessary. We present an easy and fast method to realize complex 3D structures. Therefore a pre- patterned negative-tone photoresist is first exposed to deep UV (172nm) and then imprinted at elevated temperature. Tue-A-p32 Tracking the material flow during step&repeat stamp replication for nanoimprint lithography H. Limbeck, E. Weigl, C. Feyrer, T. Fischinger, J. Danzberger, T. Voglhuber, J. Korak, M. Mühlberger (presented by J. Kastner?) PROFACTOR GmbH, Steyr-Gleink, Austria During step and repeat stamp replication for nanoimprinting we are using machine vision algorithms to track the position and shape of

the material spreading under the stamp. Also very irregular shapes can be very well tracked. Tue-A-p34 Nanostructuration of polymers using spontaneous structuration in nanoimprint lithography Frolet N., Gourgon C., Masclaux C., Durret J. CEA LETI, Grenoble, France Our goal is to use the spontaneous negative structuration to develop a new way of nanoimprint without pressure and to replicable structures on large scale on polymers foil. We will show how parameters can be optimized. We explore the incorporation of particles in the polymer matrix compatible with NIL process. Tue-A-p36 Computational study on template release process for peeling (rotating) release method Takamitsu Tochino, Tatsuya Iida, Masaaki Yasuda, Hiroaki Kawata, Yoshihiko Hirai Osaka Prefecture University, Sakai, Japan Template release mechanism is studied by computational work for peeling release method. The force curve and stress fields are calculated. Due to asymmetric field of stress by rotational movement of template, the release force is effectively reduced in separation from residual layer and sidewall of the template. Tue-A-p38 Effect of Pressing Pressure on Filling Ratio of Microstructures by Laser-Assisted Imprinting Y. Yajima a, K. Nagato a, b, K. Takahashi a, T. Hamaguchi a, M. Nakao a a The University of Tokyo, Japan b Research Fellow of Precursory Research for Embryonic Science and Technology (PRESTO), Japan Science and Technology Agency (JST) Laser-assisted thermal imprinting (LATI) is an inexpensive method to fabricate nano- or microstructures on a thermoplastic polymer. In LATI, pressing pressure of a mold has effects on filling ratio of polymer film. We replicated microstructures on the polymer with LATI and investigated the effects of the pressing pressure. Tue-A-p40 Fabrication of mesa working stamps from borderless mesa masters for step&repeat UV-based nanoimprint lithography Michael Mühlberger a, Michael J. Haslinger a, Michael Jurisch b, Jürgen Danzberger a, Thomas Fischinger a, Mathias Irmscher b a Profactor GmbH, Steyr-Gleink, Austria b IMS Chips, Stuttgart, Germany To fabricate large area stamps for nanoimprint we are working on the fabrication and replication of borderless mesa stamps. One possibility is to replicate working stamps from a mesa stamp master, which already contains patterns right to the edge. The fabrication of this master and its replication will be discussed.

Tue-A-p42 Lifetime and degradation effects of PDMS SCIL stamps during imprinting UV Curing Sol Gel resist M. J. Haslinger a, M. A. Verschuuren b, R. van Brakel b, J. Danzberger a, I. Bergmair a, c, M. Mühlberger a a Profactor GmbH, Steyr, Austria; b Philips Corporate Technologies Research, Eindhoven, The Netherlands; c Sony DADC Austria AG, Salzburg, Austria We will present a systematic study of the degradation effects of X- PDMS SCIL stamps during Nanoimprint lithography with UV-curing sol-gel material, while optimizing the imprint process to achieve a high throughput of up to 75 consecutive imprints with a cycle time of 3min 30sec per imprint. Tue-A-p44 Antireflective structures on polymer by electroforming of black silicon J. Ramiro, A. Retolaza, S. Merino IK4-TEKNIKER, Eibar, Spain Black silicon antireflective features, achieved employing commercial RIE equipment, were replicated in a thermoplastic polymer (polycarbonate) using hot embossing. With this aim, a stamp made of nickel was obtained by electroforming a silicon wafer showing those random tapered nanofeatures. Reflection of textured polymer was measured and compared to flat surfaces. Tue-A-p46 Numerical study of nanoimprint lithography with dynamic contact angle using modified Stefan's equation Ji Hyeong Ryu a, Sang-ho Lee b, Hyung Jun Lim a, c, Jae Jong Lee a, c a Korea Institute of Machinery and Materials, Daejeon; b Wonkwang University, Iksan; c University of Science and Technology, Daejeon, Republic of Korea The filling ratio and behaviors were investigated using experimental and numerical methods in order to verify the modified equation, which included compensated functions to prevent the overestimated effect of the polymer thickness and stamp indenter. Tue-A-p48 Fabrication of Micro- to Nano- Scale Pattern with Functional Material by Using Electrohydrodynamic Lithography Suok Lee a, Sanghee Jung b, Dae Joon Kang b, Jaejong Lee a a Korea Institute of machinery & Materials 1, Daejeon; b SungKyunKwan university 2, Suwon, Republic of Korea This work investigates an alternative route to induce the pattern formation process in thin resist films by the use of an electric field. This work is to investigate, develop and apply the use of EHL as a versatile patterning tool on the micrometer and nanometer scales for functional materials.

Tue-A-p50 Proton beam writing on a removable negative-tone resist as a mother for Ni electroplating H. Nishikawa a, J. Takahashi a, Y. Ishii b, T. Kamiya b a Shibaura Institute of Technology, Tokyo, Japan b Japan Atomic Energy Agency, Gunma, Japan We studied a commercially available negative resist, KMPR for proton beam writing. The microstructure of KMPR was used as a mother for electroplating to make an imprint mold. The KMPR is found to be suitable for electroplating, since it is sensitive to proton beam and is easy to be stripped. Tue-A-p52 Performance of A High Resolution Chemically Amplified Electron Beam Resist at Various Beam Energies D.X. Yang a, A. McClelland b, J. Roth c, M. Rosamond d, J. Osmond e, R.E. Palmer a, A.P.G. Robinson a a The University of Birmingham, Birmingham, UK; b Irresistible Materials Ltd., Swansea, UK; c Nano-C Inc., Westwood, MA USA d University of Leeds, UK; e ICFO, Barcelona, Spain A novel chemically amplified electron beam resist, IM-XMT-110, is presented in this study. This novel electron beam resist shows an excellent combination of sensitivity, resolution and line edge roughness (LER) at various beam energies. 30 nm pitch resolution has been achieved using a 100 kV electron beam tool. Tue-A-p54 Contrast-sensitivity behaviour of PMMA in 7:3 IPA:water developer Mark C. Rosamond, Edmund H. Linfield University of Leeds, UK We demonstrate the atypical nature of 7:3 IPA:water developer with PMMA in EBL. There is no saturation in development rate with increasing dose and hence contrast can be traded for sensitivity. High contrast is achievable by high exposure doses, high bake temperatures and short development times. Tue-A-p56 Multilayer resist scheme suitable for the fabrication of narrowly- spaced sidewall-free Nb contacts on HgTe heterostructures T. Borzenko, J. Kleinlein, J. Wiedenmann, H. Buhmann, L.W. Molenkamp Universitaet Wuerzburg, Germany Josephson junctions on HgTe require narrowly spaced superconducting contacts. The fabrication process relies on electron beam lithography, ion milling and sputtering followed by lift-off. Careful engineering of the resist profile in multiple layers of poly(methylmethacrylate) (PMMA) of different molecular weights allows for fabrication of such contacts without sidewalls.

Tue-A-p58 Voltage-Controllable Directed Assembly of Single Nanoparticles Benjamin F. Porter, Harish Bhaskaran University of Oxford, United Kingdom An elusive goal in nanomanufacturing has been the pick-and-place assembly of individual nano-objects. Using a combination of a controlled, pulsed electrical bias and solution-based surface charging we have been able to achieve the accurate assembly of individual 20 nm Au nanoparticles onto patterned templates. Tue-A-p60 Influence of Surface Energy Modification in Grapho-Epitaxy DSA Jan Doise a, b, Julien Mailfert a,b, Joost Bekaert b, BT Chan b, Guanyang Lin c, Roel Gronheid b a KU Leuven, Heverlee, Belgium; b imec, Heverlee, Belgium; c EMD Performance Materials Corp., Somerville, NJ USA In this work a dedicated surface energy modification step is implemented in imec's grapho-epitaxy directed self-assembly flow for hole multiplication. A progress report will be presented concerning the influence of surface energy on the hole placement accuracy and transfer of the pattern into an underlying stack. Tue-A-p62 3D Thermal Scanning Probe Nano-Lithography on Transparent Glass Substrates Samuel Zimmermann, Valentin Flauraud, Juergen Brugger Microsystems Laboratory - EPFL, Lausanne, 1015, Switzerland We present high resolution thermal scanning probe lithography on a transparent substrate and provide a comparative study of the resolution and mechanism of patterning on conventional Si substrate. This investigation opens the routes to patterning on new materials and applications such as plasmonic sensors. Tue-A-p64 Using intruded nano-catalysts patterned local oxidation by atomic force microscope S. C. Tseng a, M. T. Tang a, G. C. Yin a, H. L. Chen b, Y. C. Liu c, K. H. Chenc, J. R. Kwo c a National Synchrotron Radiation Research Center, Hsinchu, Taiwan b National Taiwan University, Taipei, Taiwan c National Tsing Hua University, Hsinchu, Taiwan In this study, we describe a unique method for preparing “atomic- scale” Au nanoclusters for use as highly active catalysts to enhance atomic force microscope (AFM) local oxidation. Tue-A-p66 Static image magnification with wavelength change for overlay control in Sub-Wavelength Holographic Lithography technology Michael V. Borisov, Dmitry A. Chelubeev, Vitaly V. Chernik, Alexander A. Gavrikov, Petr A. Mikheev, Vadim I. Rakhovsky, Alexey S. Shamaev

Nanotech SWHL, Moscow, Russia In modern projection lithography problem of images overlay is solved with use of set of tools for nanopositioning and mask alignment. Whereas all same methods of positioning and overlay control are available in SWHL technology, the holographic lithography is more advanced with regard to the solution of image scaling problem. Tue-A-p68 Reducing the risk for delamination with flexible hybrid stamps M. Papenheim, W. Eidemüller, S. Wang, C. Steinberg, H.-C. Scheer University of Wuppertal, Germany With flexible hybrid stamps, the structured top layer may often delaminate from the backplane due to bending stresses at the interface. We will show that with well suited parameters (modulus, thickness) of both layers this stress can be reduced to zero thus improving the handling stability. Tue-A-p70 Rapid fabrication of paper-based MEMS strain sensor using a laser micromachining process Georges Dubourg a,b, Sanja Kojić b, Jovan Matovic a,b, Vesna Crnojević- Bengin a,b a Biosense Institute, Novi Sad, Serbia b University of Novi Sad, Novi Sad, Serbia In this work, we propose an inexpensive and rapid fabrication process for the development MEMS-based strain sensors. The proposed process consists of the use of a laser micromachining process for the formation of the strain gauge but also for the fabrication of the microcantilever. Tue-A-p72 Electrochemical Process for Fabrication of Laminated Micro- Inductors on Silicon Ricky Anthony, Cian Ó Mathúna, James Rohan Tyndall National Institute, University College Cork, Lee Maltings, Ireland In this work, a CMOS compatible electrochemical-resist- electrochemical based lamination technique has been described whereby magnetic core in racetrack micro-inductor can be laminated by a new selective metal deposition process on dielectrics such as SU- 8 without any conductive seed-layer. Tue-A-p74 In-situ observation of graphene growth by an optical microscope Mikihiro Kato, Junro Takahashi, Hiroki Kato, Yoshikazu Homma, Akira Suzuki, Xinwei Zhao Tokyo University of Science, Japan In this study, a possibility of in situ observation of graphene growth using visible light is discussed

Tue-A-p76 Use of Titanium sacrificial layer for PMMA-free graphene transfer method A. Matruglio a,b, S. Dal Zilio b, S. Nappini b, E. Magnano b, F. Bondino b, M. Lazzarino b a University of Trieste, Italy; b IOM-CNR, Trieste, Italy A rapid, clean transfer method of commercial CVD graphene from copper to a silicon target substrate has been achieved using a thin Ti film as sacrificial layer. XPS investigation shows higher graphene cleaning respect to conventional methods based on PMMA. XAS measurements confirm no Ti trace after wet etching process. Tue-B-p2 Demolding Process of Polymer Resist in Hot Embossing via Finite Element Method Qing Wang, Xu Zheng, Rui Zhang Shandong University of Science and Technology, Qingdao, China We studied the stress and the deformation behaviors in polymer resist during demolding process of hot embossing via finite element method (FEM). A simple model structure of the nickel (Ni) mold/ poly (methyl methacrylate) (PMMA) resist was employed for the simulation, considering the adhesion and the friction forces. Tue-B-p4 Area-selective atomic layer deposition of platinum R.H.J. Vervuurt, A. Sharma, W.M.M. Kessels, A.A. Bol Eindhoven University of Technology, The Netherlands In this contribution area-selective atomic layer deposition of Pt is discussed. Several common lithography resists are screened for their ability to enable selective growth of Pt ALD. PMMA enables area- selective ALD, but is unsuitable for features below 50 um due to reflow of the resist at elevated temperatures Tue-B-p6 Direct patterning of multilayer graphene by ultrafast laser irradiation Wen-Yi Chen a, Zhao-Chi Chen a, Tien-Li Chang a, Chieh-Fu Chang a, Ya- Wei Lee b, Shih-Feng Tseng c a National Taiwan Normal University, Taiwan, R.O.C. b National Defense University, Taiwan, R.O.C. c National Applied Research Laboratories, Taiwan, R.O.C. The study aims to use the direct patterning of screen-printed multilayer graphene with an UV picosecond laser (PS-laser) irradiation. Based on this process, we have a great opportunity to develop and use for the electrical and fast detection in the new fields of optoelectronic applications.

Tue-B-p8 Fabrication of high efficiency 50 nm Flip Blazed Fresnel zone plate with HSQ/PMMA bilayer resists Jianpeng Liu a, Jinhai Shao a, Sichao Zhang a, Xin Li a, Yan Sun b, Yifang Chen a a Fudan University, Shanghai, China; b Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China By summary, in this work we have proposed a new approach to generate shaped profiles of zone plates by using HSQ/PMMA bilayer. This technique has the advantages of high resolution prospect with very smooth sidewall and better defined zone profile over conventional PMMA. Tue-B-p10 Micromachining Silicon Structures on Thin Membranes Using Plasma Etching Zhong Ren, Mark E McNie, Colin C Welch, Mike Cooke Oxford Instruments Plasma Technology, Yatton, UK Micromachining detailed silicon structures on thin membranes is regarded as one of the primary MEMS fabrication techniques, but also one of the more difficult processes. This paper reports a technique which addresses these problems, and realised example results on three typical structures, using ICP plasma etch in the Bosch process. Tue-B-p12 Development of InSb dry etch for mid-IR applications Vincenzo Pusino, Chengzhi Xie, Ata Khalid, Iain Thayne, David R. S. Cumming University of Glasgow, U.K. We present a new chlorine-free dry etching process which can be used to effectively etch InSb grown on GaAs substrates without exceeding its thermal budget. The etch profile depends on the chosen mask; the process proved non-selective by etching multi-layer structures comprising InSb, GaAs and GaSb. Tue-B-p14 Maskless Reactive Ion Etching of Fused Silica to Achieve Nanopillars and Nanocylinders for SERS and LSPR Sensing Anil Haraksingh Thilsted, Michael Schmidt, Tomas Rindzevicius, Kaiyu Wu, Anja Boisen Technical University of Denmark, Lyngby, Denmark Transparent nanopillar and nanocylinder arrays are achieved with a maskless reactive ion etch (RIE). A deposited thin film results in a conductive structure of both nano-cavities and nanopillars. This structure supports localised surface plasmon resonance (LSPR) allowing detection of trace molecules or biomolecules with refractive index sensing.

Tue-B-p16 Maskless Nanostructure Definition of Submicron Rear Contact Areas for Advanced Solar Cell Designs Rasmus Schmidt Davidsen, Michael Stenbæk Schmidt, Anja Boisen, Ole Hansen DTU Nanotech, Lyngby, Denmark We present a completely maskless process allowing for controlled definition of local contact areas on a passivated Si surface with controllable pitch between contact openings and submicron feature size. The technique has the potential for realizing advanced high- efficiency solar cell concepts without the use of photolithography. Tue-B-p18 Fabrication of diffractive optics with reactive ion etching on borosilicate glass Quandou Wang, Lei Chen, Ulf Griesmann NIST, Gaithersburg, Maryland, USA This paper presents plasma etching on borosilicate glass substrates with smooth etched surface and well controlled profile. A dual layer mask technique is also proposed to solve the problem prone to whisker grow in dry etching when using metal mask. A quality CGH is successfully fabricated on Schott Borofloat33 glass. Tue-B-p20 Plasma Patterning of SIS modified DSA line space patterns into Silicon Ziad el Otell a,b, Arjun Singh a,b, BT Chan a, Roel Gronheid a, Jean- Francois de Marneffe a a imec, Leuven, Belgium b Katholieke Universiteit Leuven, Belgium Sequential Infiltration Synthesis was performed to DSA lines, with 28nm pitch, to enhance etch contrast between the polymers and improve the LER/LWR of these lines. Various etching plasmas are being investigated in order to maintain the improvement in LER/LWR values while transferring the patterns to the underlying substrate. Tue-B-p22 Manipulating the switching in ferromagnetic iron nanostructures grown by Focused Electron Beam Induced Deposition R. Córdoba, D.-S. Han, B. Koopmans Eindhoven University of Technology, The Netherlands Here, we report a study on the magnetic reversal behavior in a novel set of magnetic nanostructures fabricated by FEBID. We manipulate the switching field in Fe FEBID nanostructures varying ‘scanning strategy’ of this direct-write technique. Our novel strategy could have a great potential for future spintronic applications.

Tue-B-p24 Subtractive direct-writing with a focused electron beam - Tailoring monocrystalline semiconductors without carbon contamination by localized etching. H.D. Wanzenboeck, M.M. Shawrav, J. Mika, S. Waid, Z. Goekdeniz, P. Roediger, E. Bertagnolli Vienna University of Technology, Austria Focused electron beam induced etching with chlorine is a contamination-free alternative for nanopatterning of semiconductors. Electrical modification of Si and Ge nanodevices by FEBIE has been demonstrated. Not only controlled material removal but also controlled surface modification by chlorine can be achieved with this approach. Future applications are discussed. Tue-B-p26 DNA Oligonucleotide Conformation on Au Nanoparticles: Simulations and Experiments Julia Sandmaier a, Veronika Szalai a, Daniel Schiffels a, b, Fernando Vargas-Lara b, Jack F. Douglas b, J. Alexander Liddle a a NIST, Gaithersburg, MD b University of Maryland, College Park, MD DNA-functionalized Au nanoparticles can be used as drug delivery vehicles. The conformation of DNA on the surface is critical to their function, but is determined by many parameters. Dynamic light scattering measurements of hydrodynamic size are used to validate simulations to enable optimum configurations to be designed in silico. Tue-B-p28 Large area fabrication of tuned high-aspect-ratio CVD-diamond nanopillar arrays using reactive ions etching process Peng Sun a, b, Chengcun Tang a, Xiaoxiang Xia a, Baogang Quan a, Guang Yuan b, Changzhi Gu a, Junjie Li a a Institute of Physics, Chinese Academy of Sciences, Beijing, China b Ocean University of China, Qingdao, China We show an effective fabrication approaches to fabricate controllably high aspect ratio CVD-diamond nanopillar arrays without any etching mask contamination. Such development of the CVD-diamond nanopillar fabrication process will likely impact the development of diamond based nanoscale sensors, nanoelectronic devices, and NEMS/MEMS manufacturing. Tue-B-p30 Gold-assisted chemical etching of silicon dioxide technique and application for micro-patterning Takahiro Murakami, Etsuo Maeda, Reo Kometani The University of Tokyo, Japan In this report, we demonstrated the unique properties of metal- assisted chemical etching of silicon dioxide with vapor hydrogen fluoride. Patterned gold films were applied as a metallic catalyst. We

evaluated etching depths of each phase and applied this technique to fabrication of micro lens. Tue-B-p34 Parameters affecting pattern fidelity in scanning-projection micro- stereolithography for micro lens array fabrication using hybrid layering spatial light modulation Haeryung Kim a, Seung Ki Moon b, Manseung Seo c a Tongmyong University, Busan, Korea; b Nanyang Technological University, Singapore; c Tongmyong University, Busan, Korea The effect of stereolithograpy parameters on pattern fidelity is investigated for spherical and conical surface fabrication. To correct cone apex rounding, a method of hybrid layering utilizing virtual and auxiliary layers is proposed. The potential for improving pattern fidelity by using hybrid layering is demonstrated through critical shape error measurements. Tue-B-p36 A novel approach in the free-electron laser (FEL) diagnosis based on Pixeled Phosphor Detector (PPD) A. Matruglio a, b, S. Dal Zilio b, R. Sergo c, R. Mincigrucci c, C. Svetina a, c, M. Zangrando b, c , E. Principi c, N. Mahne c, L. Raimondi c a University of Trieste, Italy; b IOM-CNR, Trieste, Italy; c Elettra- Sincrotrone Trieste, Trieste, Italy A new method of beam diagnosis of the FERMI free-electron laser (FEL) focused beam quality has developed. The proposed highly reliable and low cost Pixeleted Phosphor Detector (PPD) allows a highly precision detection, able to measure the actual spot size shot- to-shot with unprecedented micrometrical resolution. Tue-B-p38 Enhancing redetection efficacy of defects on blank wafers using stealth fiducial markers M.A.J. Bouwens a, b, P. van der Walle a, V.I.T.A. de Rooij-Lohmann a, J.C.J. van der Donck a, P.F.A. Alkemade b, D.J. Maas a a TNO, Delft, The Netherlands b Delft University of Technology, The Netherlands We have created fiducial markers that are accurately and easily found in fast dark field optical inspection tools, SEM and AFM. These markers can link the coordinates of the three platforms. The use of this marker system will greatly enhance the redetection efficacy of defects on blank wafers. Tue-B-p40 Measurement of Elastic Modulus and Residual Stress of Individual Layers for Composite Films in MEMS Application Chao Sun, Zai-Fa Zhou, Wei-Hua Li, Qing-An Huang Southeast University, Nanjing, China This paper presents a simple method to characterize the elastic modulus and residual stress of individual layers for composite films. Experiments are carried out by measuring the deflection of bilayer

cantilevers in an optical way. The elastic modulus and residual stress of individual layers can be determined simultaneously. Tue-B-p42 Experimental characterisation of FIB induced lateral damage on silicon carbide samples F. Stumpf a, b, M. Rumler a, b, A. Abu Quba a, P. Singer a, M. Rommel a a Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, Germany; b Graduate School in Advanced Optical Technologies, Erlangen, Germany This work focuses on the characterisation of the electrically relevant damage caused by FIB treatment on silicon carbide and especially its comparability to the results on silicon. The measurements were performed using SSRM and conductive AFM as highly sensitive electrical characterisation techniques. Tue-B-p44 Fast simulation tool for electron beam inspection T. Verduin, S. R. Lokhorst, C. W. Hagen, P. Kruit Delft University of Technology, The Netherlands In this contribution, we will present our SEM simulation code, some results to demonstrate the power of our simulation tool and the sensitivity of the simulation results to the parameters of the underlying physical scattering models. Tue-B-p46 A virtual lateral standard for nanoscale calibration of scanning probe microscopes Richard Koops, Marijn van Veghel VSL Dutch Metrology Institute, Delft, The Netherlands We present a standard for the calibration of the lateral scale and non-linearity of scanning probe microscopes used in industrial settings, based on a sample with an irregular texture that is measured at two sample positions. Correlation analysis is used to calibrate the lateral scale and scanner non-linearity. Tue-B-p48 AFM- based Nanomechanical Characterization of Silicon Nanowires Z. Tasdemir a, O. Peric b, G. Nadar a, G. Fantner b, Y. Leblebici b, B. E. Alaca a a Koc University, Istanbul, Turkey b EPFL, Lausanne, Switzerland Silicon nanowires (SiNWs) as being one of the most exciting type of nanostructures have been mechanically characterized by AFM bending method. Results show that SiNWs with size of 30 nm diameter, 4.5 µm length break at a force of 9 µN, in the midspan where the force is applied. Tue-B-p50 Nanoscale thermal analysis using piezoresistive SThM probes with silicon tip

Maciej Rudek a, Piotr Kunickia Wojciech Majstrzyk a, Paweł Janus b, Andrzej Sierakowski b, Piotr Grabiec b, Teodor Gotszalk a a Wroclaw University of Technology, Poland b Institute of Electron Technology, Warszawa, Poland In this paper, we present thermal analyses of micro and nanostructures with a novel micromachined, piezoresistive scanning probe microscopy (SPM) microcantilevers equipped with conductive p-type boron doped tip. Batch lithography/etch patterning process combined with focused ion beam (FIB) modification allows to manufacture thermally active, resistive tips. Tue-B-p52 A Solution to Reduce the Effect of Edge-placement Errors by Selective Etching and Alternating-material Self-aligned Multiple Patterning Part II: Cut-hole Layout Decomposition and Synthesis Hongyi Liu, Ting Han, Yijian Chen Peking University, Shenzhen, China To overcome the prohibitive barrier of edge-placement errors, we propose a novel patterning approach by combining selective etching and alternating-material self-aligned multiple patterning (altSAMP) processes. In this paper, we mainly focus on cut-hole layout decomposition and synthesis algorithm development. Tue-B-p54 Integration process of a self-aligned contact setup for flexible electronics Thorsten Meyers, Fábio F. Vidor, Ulrich Hilleringmann University of Paderborn, Paderborn, Germany We present an integration process to minimize the parasitic overlap capacitances by a self-aligned source/drain contact setup on a glass substrate. As all process steps are limited to 115 °C, the integration of both p-/n- channel TFTs and CMOS compatible applications on flexible substrates is feasible. Tue-C-p2 MOEMS Accelerometer Evaluation Regarding Resolution And Comparison With ADXL203 W . Hortschitz a, A. Kainz b, H. Steiner a, F. Kohl a, J. Schalko b, F. Keplinger b, T. Sauter a a Danube University Krems, Wiener Neustadt, Austria b Vienna University of Technology, Austria This work presents the results of the characterization of two MOEMS accelerometer in comparison to a commercial ADXL203 sensor from analog device. The noise densities for the MOEMS sensors were determined with the Lock-In amplifier revealing an improvement of the sensors resolution of more than two orders of magnitudes. Tue-C-p4 Design, Fabrication and Bio-applications of Ultra Flexible Micro Bridges Array

Jianfeng Chen, Gang Zhao, Wenqiang Du, Guangli Liu, Wulin Zhu, Jiaru Chu University of Science and Technology of China, Hefei, China We designed and fabricated an ultra-flexible micro bridges array. The structure of the array is simple, yet it has multiple applications in biomedical field. We have tested the arrays as cell culture microenvironment and cell or micro particle filter and got good results. Tue-C-p6 High performance MEMS microphone for automotive applications Ilseon Yoo, Sang-Gyu Park, Sanghyeok Yang, Dong-gu Kim, Hyunsoo Kim Hyundai Motor Company, Uiwang-si, Korea This paper presents a high performance MEMS capacitive microphone suitable for automotive environments. A high sensitivity and suppressed lower frequency characteristic of the MEMS microphone is achieved by designing a slotted membrane. From the measurement, the sensitivity is -36dBV/Pa, and 3dB roll-off frequency is 300Hz. Tue-C-p8 Shear force measurement of membrane-actuated gecko-like structures J. Zajadacz a, P. Lorenz a, K. Zimmer a, M. Papenheim b, H.-C. Scheer b a Leibniz Institute of Surface Modification, Leipzig, Germany b University of Wuppertal, Germany The designed pressure-responsive dry adhesive system is a membrane-actuated micromechanical system with gecko-inspired surface structures based on polydimethylsiloxane. For testing by shear force measurements, we developed a complex test system comprising high-resolution optical microscopy, force and displacement measurements as well as the investigation of mechanical actuators. Tue-C-p10 FIB based fabrication of reliable and durable AFM probes for current measurements M. Pea a, A. Rinaldi b, R. Araneo c, A. Notargiacomo a a Institute for Photonics and Nanotechnologies - CNR, Rome, Italy b Nanofaber srl, ENEA, C.R. Casaccia, Rome, Italy c Sapienza University of Rome, Italy In this work we discuss major advantages and drawbacks specific to the diverse conductive AFM (C-AFM) probes, and we propose the fabrication process of novel and reliable conductive probes, especially designed for extended life in particularly stressful conditions, i.e. high mechanical load applied and large current densities.

Tue-C-p12 Low temperature catalytic combustible hydrogen MEMS gas sensor enhanced by Si-Pt nanostructures Lutz Müller a, Konrad Maier b, Andreas Helwig b, Gerhard Müller b, Martin Hoffmann a a TU Ilmenau, Germany; b Airbus Group Innovations, München, Germany A thin film based H2 gas sensor with catalytic Pt nanostructures is presented. It enhances the maximum response from 11 % at 500 °C up to 68 % at 100 °C for 20,000 ppm H2, while the detection limit is as low as 200 ppm. Tue-C-p14 Fabrication and characterization of dual AFM probe with narrow- gapped silicon tip and switchable cantilevers with magneto-strictive FePd film actuator Takashi Mineta, Kenta Kawashma, Ryoga Taguchi a Yamagata University, Yonezawa, Japan A dual AFM probe having 600nm-narrow-gapped dual silicon tip and dual cantilever with magneto-strictive FePd film actuator was successfully fabricated. The cantilevers located orthogonally each other was able to be individually deflected for switching by external magnetic field. Tue-C-p16 Manufacturing a chip to accelerate electrons on microscopic scale for gas sensor applications F. J. Giebel, M. Köhle, P. Czyba, K. Kolander, K. T. Kallis, C. M. Zimmer, H. L. Fiedler Technische Universität Dortmund, Germany Sensors that determine gases are essential for example in the context of civil safety or in industrial applications. Combining the efforts of previous works, optimizing the material for a levitating acceleration grid and preventing corrosion and hydrogen embrittlement approved to manufacture a gas detector by means of planar technologies. Tue-C-p18 Fabrication of an all-Parylene hollow cantilever resonant device G. A. Marocco a, A. Qualtieri b, C. Ciminelli a, M. De Vittorio b, c, F. Rizzi b a Politecnico di Bari, Italy; bIstituto Italiano di Tecnologia, Arnesano (LE), Italy; c Università del Salento, Lecce, Italy We propose a fast and cheap fabrication strategy of polymeric hollow cantilevers. The fabricated structures consist of a Parylene beam with an integrated micro channel able to resonate to a different frequency with mass. It may offer a promising way to realize flexible, innovative devices for MEMS label-free biosensors

Tue-C-p20 Strongly Passively Damped MOEMS Vibration Sensor A. Kainz a, W. Hortschitz b, J. Schalko a, A. Jachimowicz a, F. Keplinger a a Vienna University of Technology, Austria b Danube University Krems, Wiener Neustadt, Austria Usually, one favors a low resonance peak for vibration sensing, since this expands the measurement range and avoids ringing. Both requirements are met by a low quality factor of Q~1. In this contribution, we present a MOEMS vibration sensor featuring a strong passive damping leading to a Q~2. Tue-C-p22 Large-Stroke MEMS Electrostatic Comb Drive Actuators for Magnetic Field Modulators I. R. B. Ribeiro a b d, R. A. Dias d, L. A. Rocha c d, H. Fonseca d, J. Gaspar d a Universidade Federal de Viçosa, Brazil; b Instituto Federal de Educação, Ciência e Tecnologia do Espírito Santo, Alegre, Brazil; c Universidade do Minho, Braga, Portugal; d International Iberian Nanotechnology Laboratory, Braga, Portugal The purpose of this work is to fabricate a device capable of inducing such large displacements in AC at a convenient location where a magnetic flux guide can be integrated, for a magnetic field modulation application, coupled to a magnetic sensor that in turn senses a modulated, amplified field. Tue-C-p24 Characterization of a high-sensitive flexible tactile sensing array. C.-W. Ma, C.-M. Chang, Y.-J. Yang National Taiwan University, Taipei, TAIWAN In this work, the characterization of a flexible tactile sensing array employing tunneling effect is presented. Measurement results showed that the patterned polymer composite arranged in a row- column array can effectively eliminate the cross-talk effect. Tue-C-p26 Directional Rebounding of Water Drop on PMMA Superhydrophobic Ratchets Jeong Tae Ok a, Bahador Farshchian b, Lance Brumfield c, Junseo Choi d, Sunggook Park d a Midwestern State University, Wichita Falls, TX U.S.A.; b Texas State University, San Marcos, TX U.S.A.; c Metallurgical and Materials Technologies, Baton Rouge, LA U.S.A.; d Louisiana State University, Baton Rouge, LA U.S.A. The impact property of millimetric water drops on various polymer superhydrophobic ratchets was investigated. Up to four different impact events were observed depending on the ratchets dimensions and their impact speeds. The drop temporally moves along both superhydrophobic asymmetric microratchets and the symmetric V grooves with local surface roughness difference.

Tue-C-p28 Towards EIS characterization of a segmented flow Kateřina Ježková, Pavel Beránek, Jiří Lindner, Zdeněk Slouka, Michal Přibyl University of Chemistry and Technology, Prague, Czech Republic We introduce enhanced impedance measurement method for characterization of segmented flow in microfluidic systems. It is rather simple though reliable method, suitable for automatic data processing and evaluation, it can be used even in non-transparent microchannel, in presented setup it is suitable also for high- impedance media. Tue-C-p30 Liquid metal alloy EGaIn in microfluidics Pavel Kovář, Jiří Lindner, Zdeněk Slouka, Dalimil Šnita University of Chemistry and Technology, Prague, Czech Republic We present our experiments with eutectic Ga In alloy, under common condition a liquid metal, as a medium manipulated by Lorentz force. We have found interesting behaviour including hysteresis, we discuss the perspectives of this alloy in microfluidics. Tue-C-p32 Microfabrication of a micro-electro-fluidic system for cell electroporation Oana Nedelcu, Roxana Rebigan, Florea Craciunoiu, Andrei Avram, Ramona Corman, Bogdan Bita National Institute for Research and Development in Microtechnologies - IMT Bucharest, Romania A microsystem with fluidic and electric layers for cell separation and electroporation is presented. The fluid layer was realized in two versions: by glass wet etching and by silicon deep reactive ion etching, while the electrodes were obtained by e-beam deposition of metal and patterning on silicon wafer. Tue-C-p34 From random to order: Colloidal crystals on non-flat surfaces A. Coll, S. Bermejo, I. Martin, P. Ortega, R. Alcubilla Universitat Politècnica de Catalunya, Barcelona, Spain In this paper we explore the formation of 3D colloidal crystals by this electrospray deposition technique in uneven surfaces. The results presented in this work pave the way to introduce large area colloidal crystals in a broad range of optical and photovoltaic applications. Tue-C-p36 Fabrication of inverted stack Magnetoelectric Composites on SOI Rachel Gleeson a, Jenny Wooldridge a, Ahmed Abuelgasim b a National Physical Laboratory, London, UK b University of Southampton, UK In this work, a process is presented for the fabrication of Magnetoelectric (ME) composite films by depositing the stack

materials in reverse order to what is found in the literature reducing the number of fabrication steps involved in the processing of ME structures on SOI Tue-C-p38 Birefringent metamaterial for terahertz wave plate Liangping Xia a, Hongyan Mao a,b, Sijiang Wang a, Hongliang Cui a, Chunlei Du a a Chongqing Institute of Green and Intelligent Technology, Chongqing, China; b Changchun University of Science and Technology, Changchun, China To transfer source polarization of the terahertz timedomain spectrum system, the birefringent metamaterial constituted by metallic variant split ring is proposed. Birefringence is caused by two kinds of structure difference between x and y direction. Experimental results reveal that Quasi-1/4 terahertz wave plate canbe realized with proposed metamaterial. Tue-C-p40 Non-electrical long-term incident storage for wireless sensors Martin Hoffmann, Hannes Mehner, Christoph Weigel TU Ilmenau, Germany Condition monitoring is important for sustainability. Summarized results of critical conditions within preceding periods are often sufficient to draw implications that can be stored in a non-electrical incident storage but allows an electrical wireless read out. Four showcase ways for non-electrical measurement suitable for RFID applications are presented. Tue-C-p42 Readout circuit for capacitance ratio measurement T.S.J. Lammerink a, J. Groenesteijn a, J.C. Lötters a, b, R.J. Wiegerink a a MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands; b Bronkhorst High-Tech BV, Ruurlo, The Netherlands This paper presents a technique for measuring the ratio between two on-chip capacitances, which largely eliminates the influence of drift in the electronic measurement circuit. Measurement results on an inline capacitive pressure sensor are presented. Tue-C-p44 Plate-type thermoelectric power generator having oxidized bi-metal interface Hironori Tohmyoh, Toshinori Daimon Tohoku University, Sendai, Japan We report a plate-type thermoelectric power generator for power generation from a small temperature difference. The generator is composed of thin Fe plate and the Al layer on it, and oxidizing the surface of the Fe plate was found to be effective for enhancing its efficiency.

Tue-C-p46 An optical absorber for optical detection device with two-interface surface plasmonic structure Masataka Goto, Etsuo Maeda, Reo Kometani The University of Tokyo, Japan We proposed surface plasmon resonance on each surface with same dielectric material to increase the wavelength resolution in optical detection device. Electron beam lithography, vapor deposition, lift- off, and sputtering were applied for fabrication sequence. The gain of absorbance from measured results as function of wavelength was evaluated. Tue-C-p48 SiGe stressors on Ge membranes by top-down e-beam lithography and wet etching Valeria Mondiali a,b, Monica Bollani b, Daniel Chrastina a, Jacopo Frigerio a, Mario Lodari a, Mauro Borriello a, Daniele Scopece c, Francesco Montalenti c, Michael Barget c, Emiliano Bonera c a L-NESS-Politecnico di Milano, Como, Italy; b IFN-CNR, L-NESS, Como, Italy; c Università Milano Bicocca, Milano, Italy SiGe structures fabricated with a top-down approach are used as stressors for the generation of 4% uniaxial tensile strain in a Ge bridge. A combination of dry and wet-anisotropic etching is used in order to realize free-standing Ge structures for new class of tensile Ge micro substrates. Tue-C-p52 Combined optical/e-beam lithography approach for the development of HfO2-based memristors in crossbar geometry R.V. Kirtaev, Yu.A. Matveyev, A.I. Fetisova, D.V. Negrov, A.V. Zenkevich Moscow Institute of Physics and Technology, Dolgoprudny, Russia Process combining optical/e-beam lithography is proposed to fabricate Pt/HfO2/TiN stacks in crossbar geometry down to 40x40nm in size. The process provides ~90% yield of «forming-free» nanodevices exhibiting memristive properties with endurance up to 100000 cycles, and could be used in memristor arrays for neuromorphic applications. Tue-C-p54 Extremely low temperature thin film preparation using cyclic chemical vapour deposition system with liquid precursor delivery system Jae Seok An, Bum Ho Choi, Jong Ho Lee Korea Institute of Industrial Technology, Gwangju, Rep. of Korea In this study, we have investigated thin film preparation at extremely low temperature using newly developed liquid precursor delivery system (LDS) with cyclic chemical vapor deposition (C-CVD) system. 50-nm-thick Al2O3 layer was prepared at 90oC with comparable quality.

Tue-C-p56 Device featuring pyrolysed carbon electrodes on silicon nitride membranes with applications in electrochemical measurements in- situ electron microscopy R. Møller-Nilsen a, S. Canepa a, I. Kondratowicz b, L. Amato a, K. Mølhave a a Technical University of Denmark, Lyngby, Denmark b Gdansk University of Technology, Poland Carbon is a fundamentally important and widely used electrode material and hence also essential to include in liquid cell systems for electron microscopy of liquid processes that are being increasingly used to study the intricate details of heterogeneous electrochemical processes. Tue-C-p58 Complex permittivity of semiconductor device under dc bias Yun Li , Ping Su, Min Gong Sichuan University, Chengdu, Sichuan, China The complex dielectric constant of silicon PIN diode was studied for the first time. The negative permittivity of real part and strong dielectric loss occur under dc bias. All above phenomena give a possible method to modulate the complex permittivity by electrical signals and potential applications of semiconductor devices. Tue-C-p60 Case Studies of Planar Vibration Sensor Fabricated by Front-side Micromachining Process Lan Zhang, Jian Lu, Yuichi Kurashima, Hideki Takagi, Ryutaro Maeda National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan A planar piezoresistive vibration sensor is fabricated by frontside micromachining process. Typical vibration response, transient time history signal waves, and earthquake waves have been evaluated comprehensively. The fabricated sensor can be used to realize a real- time identification of the residence security and monitoring of the civil structures health condition. Tue-C-p62 In-plane thermal conductivity measurement for nanostructured semiconductor thermoelectric materials Jinyong Choi, Kyoungah Cho, Sangsig Kim Korea University, Seoul, Korea We propose a novel method using IR images for measuring thermal conductivity of nanostructured semiconductors. In this study, silicon nanowires with lengths of several hundred micrometers prepared from a Si wafer by the top-down approach are selected as one of nanostructured semiconductors.

Tue-C-p64 High-sensitivity, Low Frequency Extrinsic Fabry-Perot Interferometric Acoustic Pressure Sensor Based On Large-Area Thin Silver Diaphragm Bin Liua, P. Jina, Jie Lina, Huan Liua, Jian Wang Harbin Institute of Technology, Harbin, China A high-sensitivity, low frequency Extrinsic Fiber Fabry-Perot interferometric acoustic sensor based on large-area thin silver diaphragm, prepared by magnetron sputtering and then transferred using a sacrifice positive resist layer, was proposed. Tue-C-p66 The fabrication and gas sensitivity of graphene nanoribbon arrays with wafer size Chengchun Tang a, Jing Zhao a, Huizhen Zhang a, Haifang Yang a, Qianqing Jiang a, Dongxia Shi a, Junjie Li a, Changzhi Gu a, b a Institute of Physics, Chinese Academy of Sciences, Beijing, China b Collaborative Innovation Center of Quantum Matter, Beijing, China Graphene gas sensor based on nanoribbon arrays were fabricated on 4 inch Si wafer, which presented a very high sensitivity to NOx. A grain boundary physisorption and charge tunneling model were built. Tue-C-p68 Modelling and Fabrication of perpendicular bi-stable cantilever for vibrational energy harvesting grounded on stochastic resonance Michitaka Kawano, Yunshun Zhang, Rencheng Zheng, Kimihiko Nakano, Beomjoon Kim The University of Tokyo, Japan This research proposed a vibrational energy harvester which can utilize low frequency vibration with wide bandwidth using stochastic resonant. The proposed energy harvester composed of bi-stable cantilever with tip mass was designed based on numerical simulations. According to simulation results, proposed energy harvester was fabricated. Tue-C-p70 Thermoelectric characteristics of a solution-processed Ag2Te nanoparticle-thin film on a plastic substrate Seunggen Yang, Kyoungah Cho, Jinyong Choi, Sangsig Kim Korea University, Seoul, Korea We investigate the thermoelectric properties of an Ag2Te nanoparticle(NP)-thin film fabricated on a plastic substrate by solution process. The Seebeck coefficient of 3560 μV/K is the highest value among those of other thermoelectric materials fabricated on plastic. Tue-C-p72 Domain Wall Pinning for Racetrack Memory Using Exchange Bias M. Samiepour a, I. Polenciuc a, A. J. Vicka a, G. Vallejo-Fernandez a, T. Hayward b, D. A. Allwood b, K. O’Grady a and A. Hirohata a

a University of York, UK; b University of Sheffield, UK We have fabricated an alternative simple pinning scheme for the DWs in straight wires using exchange bias. We have patterned antiferromagnetic (AF) wires with different widths perpendicularly above and below the ferromagnetic (F) wires. The AF wires induce exchange bias at AF/F crossing points, which act as pinning sites. Tue-C-p74 Nano-contact phase-change memory with nanostructures and a highly-resistive thin layer You Yin, Sumio Hosaka Gunma University, Kiryu, Gunma, Japan Nano-contact phase-change memory (nano-C PCM) with incorporated cylinder nanostructures and a high-resistivity nanolayer was intensively investigated for lowering reset current. The reset current of nano-C PCM could be greatly reduced to about 8% of that of the conventional one owing to its high efficiency heating. Tue-C-p76 Resistive switching characteristics in manganese oxide and tantalum oxide devices Quanli Hu, Mi Ra Park, Yawar Abbas, Haider Abbas, Tae-Sik Yoon, Chi Jung Kang Myongji University, Gyeonggi-do, Korea The monodisperse manganese oxide nanoparticles with hexagonal shape were chemically synthesized .The devices of Ta/MnO/Pt, Ta/Ta2O5/Pt, and Ta/Ta2O5/MnO/Pt were fabricated, respectively. The devices presented bipolar resistive switching behaviors. The conduction mechanism have been investigated for the conduction and switching mechanism. Tue-C-p78 The Investigation of Shear Strength and Long-Term Performance of Eutectic Flip-Chip LEDs Chien-Ping Wang a, Shang-Ping Ying b, Tien-Li Chang c a Chung Yuan Christian University, Taoyuan City, Taiwan. b Minghsin University of Science and Technology, Hsinchu, Taiwan. c National Taiwan Normal University, Taipei City, Taiwan. The Au-Sn adhesion was adopted between flip-chip LED and ceramic substrate. The varying copper thickness on the ceramic substrate was investigated in order to decrease junction temperature of the LEDs. Long-term reliability was also discussed by applying aging test to optimize the eutectic die bond process. Tue-C-p80 Effect of Annealing on Mechanical Properties of Nickel Film Electrodeposited Using Supercritical CO2 Emulsion Evaluated by Micro-Compression Test Takashi Nagoshi a, Tso-Fu Mark Chang b, Tatsuo Sato b, Masato Sone b a National Institute of Advanced Science and Technology, Tsukuba, Ibaraki, Japan; b Tokyo Institute of Technology, Yokohama, Japan

This work focused on the effect of thermal treatment of nanocrystalline nickel electrodeposited with supercritical carbon dioxide. Micro-compression test showed brittle fracture after low temperature annealing without losing strength although grain size increased from 8nm to 30nm. Thermal stability of mechanical properties was discussed based on impurities. Tue-C-p82 Temperature as an accelerating factor for life-time determination of RF-MEMS switches V.Mulloni a, L. Lorenzelli a, M. Barbato b, G. Meneghesso b, B. Margesin a a Fondazione B. Kessler, Trento, Italy; b University of Padova, Italy At present, a consolidated procedure to predict RF-MEMS switch lifetime is still lacking. In this paper temperature is investigated as accelerating factor for the estimation of switch lifetime. Based on prolonged actuation measurements at different temperatures limits and possibilities of this approach are analyzed for a typical ohmic switch. Tue-C-p84 Combination of leaky waveguide and plasmonic sensing approaches based on patterned DLC:Ag composite materials D. Virganavicius a, b, V.J. Cadarso a, H. Schift a, S. Tamulevicius b a Paul Scherrer Institut, Villigen, Switzerland b Kaunas University of Technology, Kaunas, Lithuania Metal-doped diamond like carbon (DLC) is a promising material for optical, biomedical, and catalytic applications. Here we develop periodic nanostructures based on DLC:Ag nanocomposite by means of nanoimprint lithography. This allows combining surface plasmon and guided-mode resonances to explore the application of such structures in optical sensing. Tue-C-p86 Negative ion detection in air using nano field-effect transistor (nanoFET) Kook-Nyung Lee a, Yeong-Tai Seo b, Yong-Kweon Kim b, Min-Ho Lee a, Woo Kyeong Seong a a Korea Electronics Technology Institute, Seongnam, Korea b Seoul National University, Seoul, Korea In this study, we firstly demonstrated the quantitative detection of negative ions in air using a nano field-effect transistor (nanoFET). We propose an airborne anion detecting sensor using nanoFETs, which enables the realization of a very small and low cost air ion detecting device. Tue-C-p88 Properties of Ge1Sb4Te7 and its application to two terminal synaptic device You Yin, Sumio Hosaka Gunma University, Kiryu, Gunma, Japan

Ge1Sb4Te7 exhibited a gradual conductivity change with annealing temperature, a very promising characteristics for synaptic application. A lateral Ge1Sb4Te7 device was investigated as a two terminal synaptic device and incremental conductance was obtained. The basic function of a synapse was successfully mimicked by using the lateral Ge1Sb4Te7 device. Tue-C-p90 Morphology and Crystallinity Control of Ultrathin TiO2 Layers Deposited on Carbon Nanotubes by Temperature-Step ALD Carlos Guerra-Nuñez a, Yucheng Zhang b, Meng Li c, Vipin Chawla a, Rolf Erni b, Johann Michler a, Hyung Gyu Park c, Ivo Utke a a EMPA, Thun; b EMPA, Dübendorf; c ETH Zürich, Switzerland In this work, we fabricated nanostructures of vertically aligned multiwall carbon nanotubes (vaMWCNTs) coated with ultrathin layers of TiO2. We used a new "Temperature-step" Atomic Layer Deposition approach to completely coat the CNTs and engineer the surface and interface of the TiO2 film for their use in photovoltaic devices. Tue-C-p92 A minimal optical Yagi-Uda nanoantenna array for wavelength detection with optmechanical resonator Jun Oishi a, Masataka Goto a, Hiroshi Yamaguchi b, Etsuo Maeda a, Reo Kometani a a The University of Tokyo, Japan; b NTT Corporation, Kanagawa, Japan A new photonic absorber for optical information systems with nanomechanical resonator is proposed. The photonic absorber was consisted of minimal optical Yagi-Uda nanoantenna to absorb specific wavelength. Our photonic absorbers were fabricated through reactive ion etching following electron beam lithography. The measured absorbance spectra were evaluated in our work. Tue-C-p94 Influence of Growth Temperature on the Al2O3 gate insulators for Organic Thin Film Transistors. Eung-Kyu Park, Ji-Hwan Kim, Sungruel Kwon, Wonjin Ban, Hyeong-Jun Cho, Dong-Hoon Lee, Donggeun Jung, Yong-Sang Kim Sungkyunkwan University, Suwon, Gyeonggi, Korea

Organic semiconductors are considered as a replacement for amorphous silicon in TFT applications. In this work, organic TFTs were fabricated on glass substrates. The Al2O3 thin films, used as gate insulators, were grown by ALD. Different growth temperature was used to deposit Al2O3. 150oC was used as the optimized condition. Tue-C-p96 Comparison in Memristive Behavior of Heterogeneous and Homogeneous Active Layer based on Organic Materials Kwang-Young Kim a, Jeongdai Jo a, M. Muqeet Rehman b, Kyung Hyun Choi b

a Korea Institute of Machinery and Materials, Daejeon, Korea b Jeju National University, Korea In this work, we report the effect of homogeneous and heterogeneous structres on bistable electrical behavior of the memory device based on two organic materilas MEH:PPV and PMMA. Electrically, heterogeneous structure showed memristive behavior while the device based on the homogeneous active layer did not show any memory effect. Tue-C-p98 The Enhancement of the Light Extraction Efficiency of GaN based Light-Emitting Diodes by micro-semispherical and nano-cone composite Structure Hongxin Yin a, Yujin Wang a, Chuanrui Zhu a, Yan Shen b, Haifang Yang a, Zhe Liu a, Changzhi Gu a, Baoli Liu a, Xiangang Xu b a Institute of Physics, Chinese Academy of Sciences, Beijing, China b Shandong University, Jinan, Shandong, China In this study, the composite of micro concave semispherical structure and nano-cone structure was prepared on the surface of vertical- LEDs by ICP dry etching. The GaN based V-LEDs chips with micro/nano composite structures show high light output power than the original V-LEDs chips. Tue-C-p100 GaN light-emitting diodes fabricated with doped-reduced graphene oxide/single walled carbon nanotube hybrid films Byeong Ryong Lee, Min Ju Kim, Kyeong Heon Kim, Tae Hoon Park, Kyung Rock Son, Myung Ju Kim, Tae Geun Kim Korea University, Seoul, Korea We report the performance of GaN-based light-emitting diodes with doped-reduced graphene oxide/single-walled carbon nanotube. we reduced the forward voltage of the device from 5.3 V to 5.02 V at 20 mA, and increased the output power up to 1.26 times. Tue-C-p102 A spin photovoltaic cell on semiconductor material M. Bollani a, F.Bottegoni b, M. Celebrano b, P. Biagioni b, G. Isella b, F. Ciccacci b, M. Finazzi b a IFN-CNR, LNESS laboratory, Como, Italy b Politecnico di Milano, Milano, Italy The generation of two complementary spin-up and spin-down electron populations can be obtained by illuminating a semiconductor (Ge film) through a patterned metal mask (Pt). Tue-C-p104 The Humidity Effect on UV Excited SnO2 Nanowire Based e-Nose Mustahsin Adib, Martin Sommer Karlsruhe Institute of Technology, Germany In this paper, the response of a SnO2 nanowire based electronic nose to variable relative humidity is presented. The recognition and

separation of CO, 2 – Propanol and Air at 1%, 50% and 75% is performed using LDA (Linear Discriminant Analysis) as a pattern recognition algorithm. Tue-C-p106 Application of FDTD analytical instruments to planar plasmonic diffractive lenses Yen-Yu Chou, Yeeu-Chang Lee Chung Yuan Christian University, Chung-Li, Taiwan This study employed the finite-difference time-domain (FDTD) technique to investigate various geometry-related parameters of the Al nanoholes as well as factors associated with the incident light in order to adjust the quality of the focused spot. Tue-C-p108 Mechanics of silver nanowires Horacio D. Espinosa a, R. Ramachandramoorthy a, Rodrigo A. Bernal a, Seunghwa Ryu b, Wei Cai c a Northwestern University, Evanston, IL, USA b Korea Advanced Institute of Science and Technology, Daejeon, Korea c Stanford University, Stanford, CA, USA We report a novel MEMS testing system that uses closed-loop feedback control to achieve displacement-controlled and low-noise electronic sensing for monotonic and cyclic nano-mechanical testing. The effect of cyclic loading on nanowire failure will be discussed. Tue-D-p2 Hollow-Nanoneedle-Based AFM Probe for Electrokinetic Intracellular Delivery and Intracellular TERS Imaging Takayuki Shibata a, Goh Miyazaki a, Terutake Hayashi b, Moeto Nagai a a Toyohashi University of Technology, JAPAN b Kyushu University, Fukuoka, JAPAN To enable novel atomic force microscope (AFM) applications in cellular function analysis, we have developed a newly designed bioprobe with a hollow SiO2 nanoneedle. In this paper, we propose the fabrication process of a stepped hollow SiO2 nanoneedle. Moreover, we demonstrate intracellular imaging based on tip- enhanced Raman spectroscopy (TERS). Tue-D-p4 Geometrical Patterning of the Conductive PEDOT:PSS Polymer Enables Resolved Analysis of Biological Mixtures in a Super- Hydrophobic Drop Nicola Coppedè a, Lorenzo Ferrara b, Paolo Bifulco c, Marco Villani a, Salvatore Iannotta a, Andrea Zappettini a, Mario Cesarelli c, Enzo Di Fabrizio d, e, Francesco Gentile c, e a IMEM-CNR, Parma, Italy; b Istituto Italiano di Tecnologia, Genova, Italy; c University Federico II, Naples, Italy; d King Abdullah University of Science and Technology, Thuwal, Saudi Arabia; e University of Magna Graecia, Catanzaro, Italy

PEDOT:PSS is a conductive polymer that can be integrated into last generation Organic Electrochemical Transistor devices for biological analysis. Here, we integrate PEDOT with patterns of superhydrophobic pillars in which a finite number of those pillars is independently controlled for space and time resolved analysis of a biological mixture Tue-D-p6 2D and 3D epoxy-based nanostructures for biosensor active-binding surface enhancing by laser interference lithography nanopatterning A. Sonato a, A. Zanut a, b, N. Cefarin a, b, G. Romanato a, c, d, M. Tormen a, d a IOM-CNR, Trieste; b University of Trieste; c University of Padova; d ThunderNIL Srl, Padova, Italy In this paper we report the fabrication, characterization and application of epoxy-based 2 and 3D nanostructures aimed at enhance the active-binding surface by Laser interference lithography (LIL). The resultant devices were explored as a biosensing platform by choosing Gliadin, as a model for ultrasensitive detection of biomolecules. Tue-D-p8 Nanobiosensors based on modified graphene material S. Proa-Coronado a, J.R. Vargas-García a, S. Mendoza-Acevedo a, N. Muñoz-Aguirre b, M.A. Ramírez-Salinas a, L.A. Villa-Vargas a, A. Martinez-Rivas a a National Polytechnic Institute, Mexico D.F., Mexico; b ESIME- Azcapotzalco Unit National Polytechnic Institute, Mexico D.F., Mexico In this work, we use commercial flake reduced graphene oxide (rGO) material homogeneously decorated with Pt nanoparticles (CVD technique), as part of the nanobiosensor (GFET configuration) we elaborated, to enhance its sensitivity in detecting biomolecules. We conducted electrical test without and with biomolecules (Protein G') Tue-D-p10 Nanoparticle based DNA biosensor: an optimization study Evangelos Skotadis a, Konstantinos Voutyras a, Marianneza Chatzipetrou a, Georgios Tsekenis b, Leonidas Madianos a, Stavros Chatzandroulis c, Ioanna Zergioti a, Dimitris Tsoukalas a a National Technical University of Athens, Greece b Biomedical Research Foundation of the Academy of Athens, Greece c NCSR Demokritos, Athens, Greece In the present article an electrochemical biosensor based on Platinum nanoparticles is presented and optimized by modifying key design parameters. Platinum nanoparticles are produced via the sputtering process and self-assemble on top of oxidized silicon substrates. An optimized, label-free resistive nanoparticle based biosensor design is ultimately produced. Tue-D-p14 3D microfluidic platform for the study of cells chemotaxis

S. Benetto a, S.L. Marasso c, D. Mombello a, A. Puliafito d, M. Cocuzza a, b, c, L. Primo d, F. Bussolino d, C.F. Pirri a, b a Politecnico di Torino, Chivasso (Turin); b Italian Institute of Technology, Torino; c CNR-IMEM, Parma; d IRCC, Candiolo (Turin), Italy This paper reports the simulation, fabrication and testing of a microfluidic circuit to study cells chemotaxis in a platform where reagents concentration is controlled spatially and temporally. The procedure of fabrication is described and images of simulations and tests are shown. Tue-D-p16 Surface roughness and external agents affect the self-assembly of Amyloid-beta peptides Angelo Accardo a, Victoria Shalabaeva a, Bernhard Hesse b, Marine Cotte b, Roman Krahne a, Christian Riekel b, Silvia Dante a a Istituto Italiano di Tecnologia, Genova, Italy b European Synchrotron Radiation Facility, Grenoble, France Here we present recent results related to self-assembly of Amyloid-β peptides, involved in Alzheimer’s disease, in presence of superhydrophilic nanostructured supports. A multi-technique approach involving Raman spectroscopy, synchrotron μFTIR and X- Ray micro-Diffraction reveal secondary structure transitions induced by the microfluidic flows provided by the supports. Tue-D-p18 Microfluidic components and integrated Lab on Chip for food safety control A.S. Kastania a, K. Tsougeni a, G. Kaprou a, b, G. Papadakis c, E. Gizeli b, c, A. Tserepi a, E. Gogolides a a NCSR Demokritos; b Univ. of Crete, Heraklion; c FO.R.T.H, Heraklion, Greece We fabricated four microfluidic modules, which will be integrated in a Lab-on-chip platform as described in the EU project LOVE-FOOD. Experiments of cell capture, DNA purification and isothermal DNA amplification modules were successful. The first two modules exhibit high efficiency. Sensing is performed on a SAW sensor. Tue-D-p20 Metallization of organically modified ceramics Ashkan Bonabi a, Ville Jokinen b, Tiina Sikanen a a University of Helsinki; b Aalto University, Espoo, Finland In this study, we report metallization process of (Al, Ag, Pt, and Au) on top of Ormocomp, a commercial Ormocer (negative) photoresist. Processes are developed for patterning of thin-film metal elements to serve as electrodes or mirrors in a microfluidic channel. Tue-D-p22 Nano-scale silicon scaffolds fabricated by RIE for studying in vitro primary cortical cell network formation Sijia Xie a, Meint de Boer a, Regina Luttge a,b

a MESA+, University of Twente, Enschede, The Netherlands b Eindhoven University of Technology, The Netherlands We’ve revealed that scaffolds fabricated by Jet and Flash Imprint Lithography guide primary glial cell outgrowth direction. Here we demonstrate that such shallow gratings can be well transferred to a more durable silicon scaffold by using a BOSCH reactive ion etch process and nanoresist as an etch mask. Tue-D-p24 Selective cell patterning using JSR photo-induced surface control material S. Peeters a, K. Hoshiko a, R. Van Roosbroeck a, X. Buch a, T. Pauwelyn c, V. Reumers c, D. Braeken c, H. Hamaguchi b, K. Kuriyama b, K. Hieda b a JSR Micro, Leuven, Belgium; b JSR corporation, Tokyo, Japan; c Imec, Leuven, Belgium To boost the development of new cell culturing platforms JSR has developed a new polymer material for selective cell patterning i.e. PisC. By simultaneously controlling the surface wettability and surface topography, this material allows to fabricate cell-scaffolds in a very simple, fast and reliable process. Tue-D-p26 Electrophysiological Examination of Neurite Regeneration on a Chip - Using an integrated microfluidic Lab-on-Chip approach to study neurite growth J.K. Mika a, H.D. Wanzenboeck a, K. Schwarz b, P.Scholze b, E. Bertagnolli a a Vienna University of Technology, Austria; b Medical University Vienna, Austria We demonstrated the proof-of-concept with sympathetic neurons of mice responding to different levels of nerve growth factor, a neurotrophic factor. Our microfluidic-microelectronic setup enables the simultaneous recording of neuronal activity of neurites through microchannels and optical investigation of the whole growing cell population at the same time. Tue-D-p28 Agarose multi-wells for tumor spheroid formation and anti-cancer drug test Yadong Tang a, Jianmiao Liu b and Yong Chena,c,d* a Sorbonne Universités, Paris, France; b Huazhong University Of Science And Technology, Wuhan, China; c Kyoto University, Japan; d Jianghan University, Wuhan, China Spheroid culture has recently received a great deal of attention in stem cell and cancer studies. We propose an assay form based on agarose multi-well patterning which allow easy forming millimetre size tumor spheroids and easy evaluation of anticancer drug effect. Tue-D-p30 A low cost blood microviscometer for clinical purposes

N. Morhell, H. Pastoriza Instituto Balseiro – S.C. Bariloche, Rio Negro, Argentina Here we present a blood microviscometer featuring a portable embedded system and disposable glass microfluidic chips with a novel self calibrating design. A blood sample is passively pumped into the channel where an optical detection system registers the complex fluid dynamics and automatically calculates absolute viscosity values. Tue-D-p32 Continuous tracing of emulsion formation in a microfluidic T- junction Ya-Wei Lee a, Tien-Li Chang b, Wun-Yi Chen b, Zhao-Chi Chen b, Jung- Chang Wang c a National Defense University, Tauyuan County, Taiwan, R.O.C. b National Taiwan Normal University, Taiwan, R.O.C. c National Taiwan Ocean University, Taiwan, R.O.C. Due to the miniaturization of biological and chemical processes for the design of microfluidic devices, this study aims a quantitative approach on an emulsion flow in a microfluidic T-junction that can be helpful to design the functional on-chip microfluidic system. Tue-D-p34 Effect of the microchip geometry in cells grown Betiana Lerner a, Cristian Payés b, Milena Vega a, Carlos Lasorsa a, Gustavo Helguera b, Maximiliano S. Pérez a a National Technological University, Buenos Aires, Argentina b Biology and Experimental Medicine Institute, Buenos Aires, Argentina In this work was study the effect of the microchip geometry for the growth of HEK-293T cells, which are antibody production cells. A Chip design with different serpentine shapes of 100 μm wide and lengths between 12 mm and 80 mm was used. Tue-D-p36 Directly nanopatternable nanoporous Titania – application to cell growth engineering Denis Garoli a, Laura Lovato a, Erika Zanchetta b, Gioia Della Giustina b, Giovanna Brusatin b, Marco Francardi a, Francesco De Angelis a a Istituto Italiano di Tecnologia, Genova, Italy b Industrial Engineering Department and INSTM, Padova, Italy In this work we present an approach for nanoporous Titania preparation. This system is directly patternable both by means of ultraviolet and electron beam exposure. With proper development processes it’s possible to obtain nanostructures with nanoporous morphology. This material has been investigated as support for engineered neuronal cell growth.

Tue-D-p38 Fabrication of Adjacent Micropillar Arrays with Different Heights for Cell Studies Jin Wei a, Jian Shi a, Bin Wang a, Yadong Tang a, Xiaolong Tu a, Emmanuel Roy d, Benoit Ladoux b, Yong Chen a, c a Ecole Normale Supérieure, Paris, France; b Université Paris Diderot, Paris, France; c Kyoto University, Japan; d Laboratoire de Photonique et de Nanostructures, Marcoussis, France Adjacent micropillar arrays of different heights have been fabricated on the same substrate by casting or hot embossing. Cells have shown preferential attachment when the stiffness of the pillars is not far from the Young’s module of the cells. Tue-D-p40 Fabrication of trabecular bone scaffolds through 3D stereolithogaphy for early osteoporosis diagnostics. Petra Juskova a, Jason Woittequand a, Fabien Meziere b, Marie Muller, Emmanuel Bossy b, Arnaud Derode b, Laurent Malaquin a a Universite Paris Diderot-Paris 7, Paris; b PSL Research University, Paris, France We present possibility to use 3D stereolithography to produce artificial models with controllable porosity and microstructure reproducing acoustic properties of the trabecular bone. Ultrasound measurements were in a good agreement with numerical simulations, showing great potential of using ultrasound propagation as inexpensive and non-invasive technique for osteoporosis diagnostics. Tue-D-p42 Metallization on Textile by Electroless Plating with Pd or Pt Catalyzation in Supercritical Carbon Dioxide for Sensing Wearable Devise Mitsuo Sano a, Yuma Tahara b, Tso-Fu Mark Chang a, c, Chun-Yi Chen a, c, Tomoko Hashimoto b, Hiromichi Kurosu b, Masato Sone a, c a Tokyo Institute of Technology, Yokohama, Japan b Nara Women's University, Nara, Japan c CREST, Yokohama, Japan For applications in the wearable device, we have proposed new metallization method on nylon 6,6 textile by electroless plating method involved catalyzation in pure supercritical CO2 containing Pd(II) or Pt(II) acetylacetonate and conducting the plating step in a sc- CO2 emulsified electrolyte Tue-D-p44 Formation of crosslinked PVA nanowires on multilayer graphene- based device for glucose detection Chieh-Fu Chang a, Tien-Li Chang a, Chi-Huang Huang a, Zhao-Chi Chen a, Wen-Yi Chen a, Jung-Chang Wang b, Shih-Feng Tseng c

a National Taiwan Normal University, Taiwan, R.O.C. b National Taiwan Ocean University, Keelung, Taiwan, R.O.C. c National Applied Research Laboratories, Taiwan, R.O.C. This study presents the electrode-based technique for glucose detection that combine the nanowire and laser-ablated processes. And this process has great potential in fabricating and integrating the future sensing device for glucose detection. Tue-D-p46 FIB fabrication of large arrays of zero-mode waveguides for fluorescently labeled biomolecules detection E. Bourhis a, J. Gierak a, T. Plenat b, S. Yoshizawa b, D. Fourmy b a Laboratoire de Photonique et de Nanostructures, Marcoussis, France; b Université Paris-Sud, Gif-sur-Yvette, France In this presentation we will detail our efforts aiming at fabricating zero-mode waveguides (ZMWs) using a dedicated high-resolution FIB nanowriter capable of prototyping large arrays of such devices with pre-defined geometries, ultra-high precision and highest reproducibility. Tue-D-p48 3D printed PEGDA microstructures for gelatin scaffold integration and neuron differentiation Xiaolong Tu a, Jin Wei a, Lina Wang b, Bin Wang a, Yadong Tang a, Zhijun Zhang b, Yong Chen a, c, d a École Normale Supérieure, Paris, France; b Suzhou Institute of Nano- Tech and Nano-Bionics, Suzhou, China; c Kyoto University, Japan; d Jianghan University, Wuhan, China We developed porous scaffold with a simple approach by combining 3D printing of PEGDA and freeze-drying of gelatin, which shows sponge-like gelatin structures which are embedded in the PEGDA skeleton. The scaffold has good cell biocompatibility and is used for neural progenitor cells culture and neuron differentiation. Tue-D-p50 Biomimicking natural nanopatterned topology by 3D laser lithography Chaturanga D. Bandara a, Han-Hao Cheng b, Sanjleena Singh a, Tuquabo Tesfamichael a, Adekunle Oloyede a a Queensland University of Technology, Brisbane, Australia b The University of Queensland, St Lucia, Australia Natural nanopatterned surfaces (nNPS) found on insects are bactericidal. As chemistry and geometry of these surfaces are different, rapid and controllable fabrication methods are required to fabricate and determine the geometrical parameters causing bactericidal activity. Photopolymerisation lithography is such possible technique to fabricate influential geometry of natural nanopatterned surfaces.

Tue-D-p52 Combined Effect of Surface Nano-Topography and Delivery of Therapeutics on the Adhesion of Tumor Cells on Porous Silicon Substrates De Vitis S a, Coluccio ML a, Strumbo G a, Malara N. a, Fanizzi FP b, De Pascali SA b, Candeloro P a, Di Fabrizio E b, Gentile F a, c a University Magna Graecia, Catanzaro, Italy; b University of Salento, Lecce, Italy; c King Abdullah University of Science and Technology, Thuwal, Saudi Arabia; d University Federico II, Naples, Italy We demonstrate the fabrication of porous Silicon substrates. The devices were used as substrates for MCF-7 cancer cells. Cell adhesion was verified with and without an antitumor drug to study how the competition between nano-topography and a controlled dosage of drugs may influence the adhesion of cells. Tue-D-p54 Patterned Poly-HEMA surfaces for cell sorting, guiding and understanding cell behaviour I. Mutreja a, b, D. Kumar b, J. Evans b, M.M. Alkaisi a a University of Canterbury, Christchurch, New Zealand; b University of Otago, Christchurch, New Zealand. In this study, soft lithography is used to pattern non-adhesive poly- HEMA based coatings with adhesive areas on glass to sort, guide and understand cellular response.

Special Sessions

Special Session S1 Single Nanometer Manufacturing (SNM) Lecture Hall: Session Chair: Ivo W. Rangelow

1700 Tue-S1-c1 Introduction to Single Nanometer Manufacturing for beyond CMOS devices (SNM) Ivo W. Rangelow Technische Universität Ilmenau, Germany

Work Package Group 1: Single-Nanometer Lithography 1705 Tue-S1-c2 Charged particle single nanometer nanofabrication Philip Prewett Oxford Scientific Consultants, UK 1725 Tue-S1-c3 Thermal and Oxidation Scanning Probe Lithography Felix Holzner SwissLitho AG, Switzerland Various Scanning Probe Lithography (SPL) methods have demonstrated resolution below 10 nm [1]. Within the EU project “Single Nanometer Manufacturing” we focus on methods and processes that offer genuinely lithography capabilities such as those based on thermal effects and voltage-induced processes. Work Package Group 2: Nano-Pattern-Transfer 1745 Tue-S1-c4 Single nanometer pattern transfer Mike Cooke Oxford Instruments, UK 1805 Tue-S1-c5 3D-AFM/Metrology for sub 3nm Marijn van Veghel VSL, The Netherlands

Work Package Group 3: Beyond-CMOS devices 1825 Tue-S1-c6 Sub-10nm device development within the SNM Project Zahid Durrani Imperial College London, UK

1845 End of special session S1

Special Session S2 Chemistry for ELectron Induced NAnofabrication (CELINA) Lecture Hall: Session Chair: Ivo Utke

1700 Tue-S2-c1 Chemistry for Electron Induced Nanofabrication: Introduction to COST Action CM1301 – CELINA Petra Swiderek1, Cornelis W. Hagen2, Oddur Ingolfsson3, Nigel Mason4, Ivo Utke5 1 University of Bremen, Germany, 2 Delft University of Technology, The Netherlands, 3 University of Iceland, 4 The Open University, United Kingdom, 5 EMPA, Switzerland This five minutes talk introduces you to the aim of the European COST Action network CELINA (Chemistry for ELectron Induced NAnofabrication) which strives to develop a maskless lithography nanotechnology platform based on direct-write / direct-erase with volatile functional molecules being dissociated locally by focused electron beams. Overview talks 1705 Tue-S2-c2 Focused electron beam induced processing (FEBIP) as maskless 3D direct-write nanolithography platform H.D. Wanzenboeck1, M.M. Shawrav1, M. Gavagnin1, D. Belic1, P. Roediger1, G. Hochleitner1, J.K. Mika1, P. Taus1, M. Stoeger-Pollach2, E. Bertagnolli1 1Institute of Solid State Electronics, Vienna University of Technology, Austria, 2Institute of Solid State Physics, Vienna University of Technology, Austria This overview talk introduces focused electron beam induced processing (FEBIP) as a maskless (resistless), direct- write lithography and alternative to electron-beam lithography. Focused electron beam induced deposition, etching, and oxidation will be explained. Theory on the mechanism will be exemplified by experimental results. Several applications realized by FEBID will be presented.

1735 Tue-S2-c3 Focused electron induced processing in a surface science approach Hubertus Marbach Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany This overview talk introduces latest findings on how to exploit catalytic processes and local surface activation for the controlled direct-write fabrication of clean metallic nanostructures with reduced size using finely focused electron beams. Expert talks 1805 Tue-S2-c4 Shape control in high resolution Electron Beam Induced Deposition S. Hari1, T. Verduin1, J. J. L. Mulders2, P. H. F. Trompenaars2, C. W. Hagen1, P. Kruit1 1Delft University of Technology, The Netherlands, 2 FEI Electron Optics, The Netherlands Shape control in Electron Beam Induced Deposition is essential for its application as a lithography technique. This study makes use of the current limited regime to reproducibly pattern lines of desired widths and Electron Beam Induced Etching is presented as a technique to achieve vertical sidewalls in 3D EBID structures. 1820 Tue-S2-c5 Focused electron and ion beam induced deposition on flexible and transparent polycarbonate substrates J. M. De Teresa, S. Sangiao, P. Peinado University of Zaragoza, Spain Sub-100 nm-wide Pt-C, W-C and Co nanowires with appropriate electrical conduction values have been grown on flexible transparent polycarbonate substrates by FEBID and FIBID techniques. Additionally, a Pt-C diffraction grating in transmission mode has been built, showing sharp diffraction spots. 1835 Tue-S2-c6 The SEM as reaction chamber: developing nanogranular Pt-C additive chemistry on the nanometer scale A.A.M. Al-Marashdeha, N.J.C. van Velzena, S. Harderb, R.W.A. Havenitha, J.T.M. De Hossona, W.F. van Dorpc a University of Groningen, NL, b Friedrich-Alexander Universität Erlangen-Nürnberg, DE, c Technische Universität Dresden, DE We can turn electron microscopes into a platform for chemical synthesis on the nanometer scale using focused

electron beam induced processing (FEBIP). We will present our latest results on formulating new design rules for improved FEBIP precursors, to extending our tool box for additive chemistry in the SEM.

1850 End of special session S2

Wednesday Morning 23 September 2015

Plenary Session 2 Lecture Hall: World Forum Theatre Session Chair: Dieter Kern (Univ. Tuebingen, DE) time 0830 Wed-Keynote-3 Development of block copolymers to create complex material nanopatterns M. Morris, C Cummins, T Ghoshal University College Cork, Cork, Ireland and AMBER, Trinity College Dublin, Dublin, Ireland EUV lithography and the possible development of block copolymer self-assembly techniques as on-chip lithographic masks may provide techniques for the development of regular nanopatterned substrates at acceptable costs. Block copolymer lithography is nearing a point where it could be transferred into industrial fabrication. Block copolymer methods may have application beyond lithography as means of ‘writing’ functional patterns on the nanoscale. We show how block copolymer nanopattening techniques can be realized to allow the formation simple line and cylinder nanopatterns of dielectrics, magnetics, metals and complex structures using simple methodologies.

Cluster A - Micro and Nano Patterning A6 - Directed Self Assembly Lecture Hall: Amazone Session Chair: Christophe Vieu (Univ. of Toulouse, FR)

0930 Wed-A6-c1 Capture probability of assembly defects in 14 nm half- pitch line/space DSA patterns Hari Pathangi a, Boon Teik Chan a, Lieve Van Look a, Nadia Vandenbroeck a, Dieter Van Den Heuvel a, Ryoto Harukawab, Ito Chikashib, Jim Brown b, Paulina A. Rincon a, Marco Polli b, Andrew Cross b, Sung Eun Hong c, Guanyang Lin c, Kathleen Nafus d, Lucia D’Urzo e, Roel Gronheid a, Paul Nealey f aIMEC, Leuven, Belgium; bKLA-Tencor Corporation, Milpitas CA USA; cEMD Performance Materials Corp., Branchburg, NJ USA; dTokyo Electron America, Inc., Austin, TX USA; eEntegris GmbH, Dresden, Germany; f University of Chicago, IL USA In this work, we will further our understanding of the capture probability of DSA-relevant defect modes, namely dislocations and 1-period bridges, by studying the effect of etch depth on the signal to noise ratio (SNR) of the defects

captured in the broadband plasma tool. 0945 Wed-A6-c2 Ordering of either nano-dot arrays or nano-lines along EB- drawn resist guide lines using PS-PDMS self-assembly with a molecular weight of 1.46 kg/mol Sumio Hosaka, Masakazu Ohyama, Hui Zhang, You Yin, and Hayato Sone Graduate School of Science and Technology, Gunma University, Kiryu, Japan We succeeded to fabricate either nanodot arrays or nano line arrays with the guide lines with PS-PDMS with 1.46 kg/mol. due to the thickness dependence on the structure of nano-dot and nano-lines with 7-nm-size and 12-nm- pitch. 1000 Wed-A6-c3 Determination of the interfacial energies in chemical guiding patterns for directed self-assembly of block copolymers Laura Evangelio a,b, Matteo Lorenzoni a, Jordi Fraxedas b, Francesc Pérez-Murano a a Institut de Microelectrònica de Barcelona, Bellaterra, Spain; b Institut Català de Nanociència i Nanotecnologia, Bellaterra, Spain Directed self-assembly (DSA) of block co-polymers allows the generation of high-resolution patterns. In chemical epitaxy DSA, the guiding patterns are defined as areas of varied chemical strength. We present a method to experimentally determine the interface energies and the relation between surface affinity strength and guidance capability 1015 Wed-A6-c4 Characterization of Half-pitch 15 nm Metal Wire Circuit Fabricated by Directed Self-assembly of PS-b-PMMA Y. Kasahara, Y. Seino, H. Sato, K. Kobayashi, H. Kanai, H. Kubota, K. Miyagi, S. Minegishi, K. Kodera, N. Kihara, S. Nomura, T. Tobana, M. Shiraishi, Y. Kawamonzen, and T. Azuma EUVL Infrastructure Development Center, Inc., Tsukuba, Ibaraki, Japan We have proposed a novel DSA process for HP sub-15 nm L/S patterning process named“coordinated line epitaxy (COOL) process”. In order to carry out our process verification for practical semiconductor device manufacturing, we demonstrated an electrical open and short yield test and analyzed defects by physical analysis.

1030 Break and Exhibition

A7 - Stencil and Tip Based Patterning Lecture Hall: Amazone Session Chair: Pasqualantonio Pingue(Scuola Normale Superior PISA, IT)

1100 Wed-A7-c1 Etching through nanostencils for high resolution and large- scale patterning of optical nanoantenna arrays Valentin Flauraud a, Thomas S. van Zanten b, Mathieu Mivelle b, Carlo Manzo b, Maria F. Garcia Parajo b, Jürgen Brugger a a EPFL, Lausanne, Switzerland; b ICFO, Castelldefels, Spain

We present reactive ion etching through reusable nanostencils as a high resolution, large scale subtractive patterning technique. Specifically, we demonstrate and apply this high quality patterning approach to the fabrication of large arrays of optical nanoantennas used for live-cell, nanoscale fluorescence measurements. 1115 Wed-A7-c2 Direct fabrication of thin film layer MoS2 field-effect nanoscale transistors by oxidation scanning probe lithography Francisco M. Espinosa a, Yu Kyoung Ryu a, Kolyo Marinov b, Dumitru Dumcenco b, Andras Kis b and Ricardo Garcia a a Instituto de Ciencia de Materiales, Madrid, Spain b EPFL, Lausanne, Switzerland Oxidation scanning probe lithography method is applied to fabricate very narrow field effect transistors channel widths on a single layer MoS2 flake. This method relies on the direct and local chemical modification of MoS2 to enhance the aspect ratio of the devices and thus, their electrical properties. 1130 Wed-A7-c3 Lift-off processes for avoiding substrate damage from charged particles during lithography Martin Spieser a, Colin Rawlings b, Heiko Wolf b, Philipp Mensch b, Siegfried Karg b, Simon Bonanni a, Urs Duerig b, Armin W. Knoll b a SwissLitho AG, Zurich, Switzerland b IBM Research, Rueschlikon, Switzerland Thermal Scanning Probe Lithography (tSPL) is a novel method for patterning and manipulating delicate nanostructures. Here we present two high resolution (< 100 nm) lift-off techniques based on tSPL patterning which respectively minimize and eliminate exposure to charged particles, thus preserving device performance.

1145 Wed-A7-c4 Field Emission Scanning Probe Lithography and Etching at Cryogenic Temperatures – A Closed Loop Technology towards beyond CMOS Device Manufacturing Marcus Kaestner a, Yana Krivoshapkina a, Cemal Aydogan a, Burkhard Volland a, Matthias Budden a, Tzvetan Ivanov a, Ahmad Ahmad a, Tihomir Angelov a, Alexander Reum a, b, Manuel Hofer a, b, Steve Lenk a, Ivaylo Atanasov a, b, Mathias Holz b, and Ivo W. Rangelow a a Ilmenau University of Technology, Germany b Nano analytik GmbH, Ilmenau, Germany The heart of a single nanometer manufacturing technology consists of the proper combination and tuning of the lithographic technology and the pattern transfer strategy. In this paper we will discuss our recent achievements in the closed loop field emission scanning probe lithography technology and cryogenic etching as subsequent transfer step. 1200 Wed-A7-inv Advanced Scanning Probe Lithography A.Knoll IBM Research, Rüschlikon, Switzerland Since the invention of the Scanning Probe Microscope for imaging surfaces down to atomic resolution, a similar quest started to manipulate the constituents of the surface with comparable resolution. The close proximity of the scanning tip to the substrate has enabled a variety of interactions and methods. Most of these them are direct write in nature. Furthermore, using the same tip for imaging allows for in-situ post-patterning metrology, and nanometer precise overlay and stitching. However, in particular the limited throughput of these methods has largely prevented their exploitation in technological applications. I will give an overview on robust methods operating in ambient conditions that demonstrate a potential for applications.

1230 Lunch Break until Lunch served in the Exhibition Area 1330

Cluster B - Micro and Nano Fabrication B7 - Metrology Lecture Hall: Yangtze Session Chair: Harm Knoops (TU Eindhoven, NL)

0930 Wed-B7-c1 Imaging and model simulation of trenches on a silicon surface in helium ion microscopy

P.F.A. Alkemade a, T. Yamanaka b, E. van Veldhoven c, D.J. Maas c, K. Ohya b a Delft University of Technology, The Netherlands; b Tokushima University, Japan; c TNO, Delft, The Netherlands The helium ion microscope constructs images of specimens by detecting ion-beam-generated secondary electrons (SEs). The high yield and localized production of SEs ensure a high signal-to-noise ratio and a high spatial resolution. We studied experimentally and by simulation image contrast for trenches at different orientations. 0945 Wed-B7-c2 Diamond scanning probes with sub-nanometer resolution for advanced nanoelectronics device characterization T. Hantschel a, Z. Xu a,b, K. Paredis a, A. Schulze a, W. Vandervorst a,b a imec, Leuven, Belgium; b K. U. Leuven, Belgium We present a high-yield (≥85%) process for conductive full diamond tips (FDT) with sub-nanometer resolution for electrically characterizing advanced semiconductor device structures. The doped diamond tips are integrated into Ni cantilevers and are manufactured via 200-mm Si wafer technology. We demonstrate SSRM measurements on nanoelectronics device structures. 1000 Wed-B7-c3 Electric Fields in Scanning Electron Microscopy Simulations K. T. Arat a, J. Bolten b, T. Klimpel a, a GenISys GmbH , Taufkirchen, Germany b AMO GmbH, Aachen, Germany Electric fields and charging effects in SEM were studied. A fast field solver was implemented and integrated into a MC based SEM simulator. The accuracy of simulation results has been evaluated by using SEM measurements of 2D and complex 3D structures. Results were in good agreement with experimental data. 1015 Wed-B7-c4 Using Piezoresponse Force Microscopy for semiconductor ZnO nanowires G. Murillo a, H. Lozano a, N. Domingo b, G. Catalán b, J. Estevea a Instituto de Microelectrónica de Barcelona, Bellaterra, Spain; b Instituto Catalán de Nanociencia, Bellaterra, Spain We have characterized the topology, piezoresponse and I-V curve of ZnO nanowires grown by hydrothermal method. A piezoelectric coefficient of 8.6 pm/V has been measured and the presence of a Schottky barrier has been observed for certain AFM probe tips, indicating the existence of the nanopiezotronic effect.

1030 Break and Exhibition

B8 - Self Aligned Processes Lecture Hall: Yangtze Session Chair: Monika Fleischer (Univ. Tuebingen, DE)

1100 Wed-B8-inv Strategies for selective atomic layer deposition on patterned substrates A.J.M.Mackus, F.S.M.Hashemi, S.F. Bent Stanford University, Stanford, USA There is increasing interest in recent years for novel nanopatterning approaches based on selective deposition of materials. When extremely small nanoscale features need to be fabricated, such as those found in FinFETs transistors, it can be beneficial to process the material in a bottom-up fashion using self-aligned growth to eliminate the overlay challenges of lithography. We present area selective deposition using a combination of self assembled monolayers and atomic layer deposition. 1130 Wed-B8-c1 Area selective growth of chalcogenide materials onto patterned substrates by chemical vapor deposition Ruomeng Huang , Sophie L. Benjamin, Chitra Gurnani, Andrew L. Hector, William Levason, Gillian Reid and C. H. (Kees) de Groot University of Southampton, United Kingdom Here we report the chemical vapor deposition of a range of different chalcogenide materials with custom-synthesized single source precursors. Area selective deposition behavior by CVD is observed for the first time via these single source reagents. 1145 Wed-B8-c2 Nanocrystal Self-Assembly of CdSe/CdS Hollow Domes in quasi contact-free conditions Angelo Accardo a, Francesco Di Stasio a, Manfred Burghammer b, Christian Riekel b, Roman Krahne a aIstituto Italiano di Tecnologia, Genova, Italy bEuropean Synchrotron Radiation Facility, Grenoble, France We report the self-assembly of colloidal nanocrystals (NCs) into 3D hollow dome structures by exploiting the homogeneous evaporation rates of droplets drying on superhydrophobic substrates. The free-standing hollow domes, which can be used as color converters, show peculiar NCs packing as revealed by synchrotron X-ray nanodiffraction.

1200 Wed-B8-c3 Fabrication of High-resolution, Self-aligned Palladium Electrodes for Nanoresonators Laura Vera Jenni, Johannes Weichart, Matthias Muoth, Kiran Chikkadi, Miroslav Haluska and Christofer Hierold ETH Zürich, Switzerland Carbon nanotube based resonators show great promise for mass-sensing. To actuate higher modes, multi-gate structures are needed. Here, the source, drain and the gate electrodes, which are required to have an exact difference in elevation, were patterned using a self-aligned e-beam lithography based process. 1215 Wed-B8-c4 Crystallinity variations over the length of vertically aligned carbon nanotubes grown by chemical vapour deposition S. Vollebregt, P. Padmanabhan, C. Silvestri, P.M. Sarro Delft University of Technology, The Netherlands To transfer source polarization of the terahertz timedomain spectrum system, the birefringent metamaterial constituted by metallic variant split ring is proposed. Birefringence is caused by two kinds of structure difference between x and y direction. Experimental results reveal that Quasi-1/4 terahertz wave plate canbe realized with proposed metamaterial.

1230 Lunch Break until Lunch served in the Exhibition Area 1330

Cluster C - Micro and Nano Systems and Devices C5.1 - Micro and Nano devices for Physical Science - Computing Lecture Hall: World Forum Theatre Session Chair: Victor Cadarso (PSI, CH)

0930 Wed-C5-inv Evolution of Superconducting Quantum Processors Leonardo DiCarlo QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands I will present the basic fabrication of superconducting quantum processors with the focus on planar processors based on circuit quantum electrodynamics, assembled from modular elements. I will survey three generations of processors, identified through their characteristic use of the third dimension. I will conclude with a survey of key fabrication developments envisioned on the road to

scalability. 1000 Wed-C5-c1 Quantum Cellular Automata: Design and Fabrication with the Nanodamascene Process Gabriel Droulers a, Serge Ecoffey a, Michel Pioro-Ladrière b, Dominique Drouin a a Université de Sherbrooke, Qc, Canada; b Canadian Institute for Advanced Research, Toronto, On, Canada We present the design and fabrication of a quantum cellular automata half-cell using the Nanodamascene process. Coulomb oscillations of SET charge detectors are obtained at low temperature. The obtained charging energies of a few meV correspond to values extracted from a model using finite element method and Monte-Carlo. 1015 Wed-C5-c2 Scaling and Integration of Memristive Nanodevices Using Nanoimprint Lithography Shuang Pi, Peng Lin, Qiangfei Xia University of Massachusetts, Amherst, MA USA We present the smallest memristive nanodevices (8 nm) in a crossbar array and the first memristor/CMOS hybrid circuits with reconfigurable logic functions, both enabled by nanoimprint lithography.

1030 Break and Exhibition

C5.2 - Micro and Nano devices for Physical Science - Nano Tubes and Nano Wires Lecture Hall: World Forum Theatre Session Chair: Zahid Durani (Imperial College London, UK) 1100 Wed-C5-c3 TEM study of Schottky junctions for reconfigurable silicon nanowire devices S. Banerjee a,b, M. Löffler a, A. Heinzig b, J. Trommer c, U. Muehle a, W.F. van Dorp a, W.M. Weber b,c, E.Zschecha d a Technische Universität Dresden, Germany; b NaMLab GmbH, Dresden, Germany; c Fraunhofer-Institut für Keramische Technologien und Systeme, Dresden, Germany Si nanowires can be used to fabricate reconfigurable FETs by forming nickelsilicide/silicon Schottky junction in the nanowires. Such nanowires are a potential approach for beyond CMOS devices. We characterize the Ni diffusion into the nanowires and the nickelsilicide phases that are formed in situ, to tune the Schottky junction. 1115 Wed-C5-c4 Fabrication of a suspended silicon nanowire single hole

transistor by focused ion beam implantation Jordi Llobet a, Emiljana Krali b, Chen Wang b, Xavier Borrisé c, Mervyn E. Jones b, Francesc Pérez-Murano a, Zahid A. K. Durrani b a Institut de Microelectrònica de Barcelona, Bellaterra, Spain; b Imperial College London, London, UK; c Institut Català de Nanociència i Nanotecnologia, Bellaterra, Spain We present the fabrication of a suspended p-type Si nanowire incorporating nanocrystals that form sa suspended single-hole transistor showing electrical characteristics with well-defined Coulomb diamonds at 10 K. The device has been fabricated by the combination of FIB implantation, wet chemical etching and high temperature annealing. 1130 Wed-C5-c5 GaAs/InSb core-shell nanowires and InSb nanotubes Torsten Rieger a,b, Franz Josef Hackemüller a,b, Patrick Zellekens a,b, Johanna Janßen a,b, Natalia Demarina a,b, Detlev Grützmacher a,b, Thomas Schäpers a,b, Mihail Ion Lepsa a,b a Forschungszentrum Jülich, Germany; b JARA-FIT, Jülich, Germany The growth and structural characteristics of GaAs/InSb core-shell nanowires are investigated and electrical measurements are performed. The huge lattice mismatch is relaxed by misfit dislocations. Room temperature transport experiments show an ambipolar behavior which strongly depends on the dimensions of the nanowires. 1145 Wed-C5-c6 Fabrication and characterization of tunnel barriers in a multi-walled carbon nanotube formed by focused ion beam technique H. Tomizawa a b, T. Yamaguchi a, S. Akita c, K. Ishibashi a, b, d a RIKEN, Wako, Saitama, Japan; b Tokyo University of Science, Katsushika-ku, Tokyo, Japan; c Osaka Prefecture University, Nakaku, Sakai, Osaka, Japan; d RIKEN Center for Emergent Matter Science (CEMS) We report on the fabrication and the characterization of tunnel barriers in multi-walled carbon nanotubes formed by focused ion beam technique. The resistance variation after the irradiation and the tunnel barrier height were evaluated. This technique could be applied to fabricate single electron devices in nanotube circuits. 1200 Wed-C5-c7 Improving the Double Layer Capacitance of Silicon Nanowire Arrays with Room Temperature Ionic Liquids Abdurrahman Shougee, Lu Qiao, Tim Albrecht, Kristel Fobelets

Imperial College London, UK A low-cost metal-assisted chemical etch process is used to fabricate a high density of Si nanowires as supercapacitor electrodes. Surface conditioning is carried out to achieve higher currents and a much larger electrochemical window, with capacitances improving over 100-fold compared to bulk Si. 1215 Wed-C5-c8 Optimization of 3-D N-channel Twin Silicon Nanowire MOSFET Izzati Omar and Nurul Ezaila Alias Universiti Teknologi Malaysia, Skudai, Johor, Malaysia Twin silicon nanowire n-channel MOSFET is an advanced nanotechnology which is believed to be the smallest structure of CMOS devices. The optimization of n-channel TSNWFET is explored using 3-D simulation. Electrical characteristics such as Vth, SS, and Ion/Ioff ratio are analyzed with various dimension dependent.

1230 Lunch Break until Lunch served in the Exhibition Area 1330

Cluster D Micro and Nano Technology for Bio/Life Sciences D3 - Organ on a Chip Lecture Hall: Mississippi Session Chair: Stella Pang (City Univ. of Hong Kong, HK) time 1000 Wed-D3-c1 Skin-on-chip : integration of skin tissue and microsystems engineering Bergers, Lambert a,b, Waaijman, T.a, De Gruijl, T. D.a, van de Stolpe, A.b, Dekker, R.b,c, Gibbs, S. a,d a VU University Medical Center, Amsterdam; b Philips Research, Eindhoven; c Delft University of Technology; d ACTA, Amsterdam, Netherlands Skin disease has an underlying immune component. This paper discusses a novel in-vitro microsystem for studying the dynamic immune response in human skin models. It employs bichannel microfluidics with microporous membranes. Skin equivalent and endothelium is cultured on this. We show that this microsystem is suitable for immunological assays. 1015 Wed-D3-c2 Microelectrode array with integrated sieving structure for automated cell positioning B. Schurink a, E.J.W. Berenschot a, R.M. Tiggelaar a, R. Luttge a,b.

a University of Twente, Enschede; b Eindhoven University of Technology, The Netherlands We attempt to improve the common microelectrode array (MEA) device by enhancing the efficiency and quality of the electrical coupling by automatic positioning of neurons on 3D-shaped electrodes. 0930 Wed-D3-inv Organs-on-chip by selective assembly of primary cells enabled by dielectrophoresis in microfluidic devices M.Stelzle NMI Natural and Medical Sciences Institute at the University of Tübingen, Reutlingen, Germany Our generic microfluidic technology employs dielectrophoresis to construct tissues in vitro by assembly of primary human cells. Active assembly of multiple cell types and constant perfusion produce organ-like morphologies. Results from liver and blood–brain barrier chips will be presented

1030 Break and Exhibition

D2 - Lab on Chip Lecture Hall: Mississippi Session Chair: Anja Boisen (DTU, DK) 1100 Wed-D2-c1 Microreactor with integrated micro-mixer and heated nebulizer for mass spectrometric chemical reaction analysis Gianmario Scotti a, Markus Haapala a, Sofia Nilsson a, Ingo Aumüllera, Gustav Boije af Gennäsa,Alexandros Kiriazisa, Jari Yli-Kauhaluoma a, Anas Al-Azawi b, Robin Rasb, Sami Franssila b, Tapio Kotiaho a a University of Helsinki, Finland; b Aalto University, Finland We present a microfluidic device that integrates on one chip a microfluidic mixer, a microreactor, and a heated nebulizer, aimed at analyzing chemical reactions by mass spectrometry. This is the first time that such integration has been demonstrated. 1115 Wed-D2-c2 Resealable flowcells with integrated oxygen sensing layers for enzymatic reaction studies Martina Viefhues a, Donya Valikhani b, Shiwen Sun b, Torsten Mayr b, Elwin Vrouwe a, Marko Bloma, Bernd Nidetzky b, Juan Bolivar b a Micronit Microfluidics BV, Enschede, The Netherlands b Graz university of Technology, Austria A versatile type of flowcells is presented that allows easy

integration of sensor elements and repeatable access to the flowcells surface enabling chemical and physical surface modification. The capability of the devices to perform well- controlled enzymatic reactions was evaluated. Integrated oxygen sensing layers were used to measure oxygen consumption. 1130 Wed-D2-c3 Monolithically integrated photonic platform for Point-of- Need application in food safety Μ. Angelopoulou a, V. Pagkali a, Z. Tsialla a, A. Botsialas b, A. Salapatas a, P.S. Petrou a, E. Makarona a, G. Jobst c, D. Goustouridis b, I. Raptis a, S.E. Kakabakos a, K. Misiakos a a NCSR Demokritos, Greece; b ThetaMetrisis S.A., Athens, Greece; c Jobst Technologies GmbH, Freiburg, Germany We have developed a novel monolithic optoelectronic module, fabricated with standard microelectronic processes, where planar waveguides are self-aligned with VIS/NIR light sources. The transducer has been functionalized for the simultaneous detection of pesticides, mycotoxins and allergens in food at concentrations lower than the limits set by EU. 1145 Wed-D2-c4 A Capillary-Driven Microsystem for DNA Amplification Direct from Whole Blood Benjamin Jones a, Ahmed Taher a,b, Bivragh Majeed a, Paolo Fiorini a and Liesbet Lagae a,b a IMEC, Leuven, Belgium; b KU Leuven, Belgium In this paper we propose capillary-driven, microfabricated systems with enhanced functionalities. Flow control devices such as valves and pumps with controllable filling patterns have been proposed. This work extends the possibilities of capillary-driven microsystems by demonstrating DNA amplification using polymerase chain reaction (PCR). 1200 Wed-D2-c5 Periodic convection of superparamagnetic beads within a microfluidic channel by interlocked, electroplated structures activated by a static field Thies Jan-Wilhelm, Koch Eugen V., Dietzel Andreas TU Braunschweig, Germany We present a novel method for manipulating superparamagnetic beads within a microfluidic channel in a seesaw manner. The microsystem is activated by only one static magnet but still allows to control the movement in a 2D trajectory due to changing shapes of electroplated structures along the channel. 1215 Wed-D2-c6 Nanoimprinted photonic crystal slab sensor for label-free

diffusion monitoring Kristian Tølbøl Sørensen, Andreas Spandet Havreland, Sigurd Friis Truelsen, Pétur Gordon Hermannsson, Christoph Vannahme, Anders Kristensen Technical University of Denmark, Lyngby, Denmark Microfluidic H-filters separate solutes by diffusivity. We present a photonic crystal slab sensor, embedded into the microchannel of a device that is ultrasonically bonded. This enables the monitoring of diffusion of compounds that are neither absorbing nor fluorescing. Resulting characteristic diffusion profiles agree well with simulations.

1230 Lunch Break until Lunch served in the Exhibition Area 1330

Wednesday Afternoon 23 September 2015

Cluster A - Micro and Nano Patterning A1 - Photo Lithography Lecture Hall: Amazon Session Chair: Paul Alkemade (TU Delft, NL) time 1330 Wed-A1-c1 Towards Single Photon Lithography Hilde Hardtdegen a,b, Martin Mikulics a,b and Detlev Grützmacher a,b a Forschungszentrum Jülich GmbH, Germany b Jülich Aachen Research Alliance for Future Information Technology (JARA-FIT), Germany A novel mask-less lithography approach and its technological realization are presented for a simple, fast and flexible nanostructure mass-production. It is based on the use of single photon sources for exposure. A proof of principal is demonstrated using vertically integrated singularly addressable nano-LEDs assembled in arrays. 1345 Wed-A1-c2 Fabrication of high-aspect-ratio polarizers with Displacement Talbot Lithography Christian Dais, Francis Clube, Li Wang, Harun H. Solak Eulitha AG, Würenlingen, Switzerland Fabrication of large-area wire-grid polarizers with Displacement Talbot Lithography technique is demonstrated. The high aspect ratio lines etched in aluminum have a width of 125 nm, and a thickness of 250nm. The experiments show achievement of good quality polarizers with a new technique compatible with high- volume manufacturing. 1400 Wed-A1-c3 Through-Wafer Photolithographic Exposure for Control of Resist Sidewall Profile L. Wang, C. Dais, F. Clube, H. H. Solak Eulitha AG, Würenlingen, Switzerland A new scheme is introduced for obtaining negative sidewall photoresist structures suitable for lift-off processing. The scheme involves exposing the photoresist through backside of the wafer in a Displacement Talbot Lithography setup. Sub-micron diameter Au discs were obtained in an exposure performed through 0.5mm-thick transparent substrates.

1415 Wed-A1-c4 High coherency hybrid-ArF laser: An application to interference lithography Hiroaki Oizumi, Takashi Onose, Youichi Sasaki, Hironori Igarashi, Mitsuru Tamiya, Atsushi Fuchimukai, Shinji Ito, Kouji Kakizaki, Takashi Matsunaga and Hakaru Mizoguchi Gigaphoton Inc., Oyama, Tochigi, Japan We have been developing a hybrid-ArF laser which consists of a high efficiency solid-state laser oscillator and an ArF excimer laser power oscillator. It is found that hybrid-ArF laser has spatial coherent length of larger than 2mm and is suitable for large field exposure by interference lithography.

Cluster D Micro and Nano Technology for Bio/Life Sciences C3 - Meta Materials and their Fabrication Lecture Hall: Yangtze Session Chair: Anders Kristensen (DTU, DK) time 1330 Wed-C3-inv Recent progress in hyperbolic, chiral and 3D metamaterials: Physics, Fabrication and Applications Minkyung Kim, Gwanho Yoon, Inki Kim, Sunae So, Junsuk Rho Pohang University of Science and Technology (POSTECH), Korea I will present recent progress in hyperbolic, chiral, NIM and 3D metamaterials. 1400 Wed-C3-c1 Wavelength Selective Metamaterial Absorber for Thermal Detectors A. Shoshi a, T. Maier b, H. Brückl a a Danube University Krems, Wiener Neustadt, Austria b Austrian Institute of Technology GmbH, Vienna, Austria The absorption properties of trilayer and more sophisticated multilayer metamaterial structures are analyzed by numerical simulations and compared to experiments. The dissipative electromagnetic energy absorption of tailored metamaterials can be utilized to improve the performance of thermal detectors. 1415 Wed-C3-c2 Fabrication of Chiral-Molecular@ Nanoparticle Complex Materials with Great Chiroptical Effect in Visible Region Duan Xie a,c, Yarong Su a,c, Yidong Hou a,c, Fuhua Gao a,b,c, Jinglei Dua,b,c, Jianhua Zhua,b,c a Sichuan University, Chengdu, Sichuan, China; b Sino-British Joint Materials Research Institute, Chengdu, Sichuan, China;

c Sichuan, China University, Chengdu, China Chirality is a common phenomenon in nature. However, the chiroptical effect from nature chiral molecules is very weak and usually located in ultraviolet region. In this paper, we report the scalable fabrication of a new kind of chiral molecule@nanoparticle complex materials with great chiroptical effect in visible region.

C5.3 - Micro and Nano devices for Physical Science - Instrumentation and Imaging Lecture Hall: World Forum Theatre Session Chair: Richard Koops (VSL, NL) time 1330 Wed-C5-c9 Dopant Imaging of Power Semiconductor Device Cross Sections U. Gysin a, E. Meyer a, T. Glatzel a, H. R. Rossmanna b, T. A. Jung a,b, S. Reshanov c, A. Schöner c, H. Bartolf d a University of Basel, Switzerland; b Paul Scherrer Institute, Villigen, Switzerland; cAscatron AB, Kista, Sweden; d ABB Switzerland Ltd, Baden-Dättwil, Switzerland The characterization of power electronic device cross- sections is an essential part of the manufacturing and optimization processes. One of the important informations is the mapping of the dopant concentrations, since they rule the electronic performance of the device. A dedicated scanning probe microscope is applied for this purpose.

1345 Wed-C5-c10 Experimental system combined with a micromachine and double-tilt TEM holder Takaaki Sato, Eita Tochigi, Teruyasu Mizoguchi, Yuichi Ikuhara, Hiroyuki Fujita The university of Tokyo, Japan An in-situ observational setup is a significant tool that is necessary for understanding the fundamental properties of materials. We have combined MEMS with TEM and developed a novel experimental setup. The setup enabled us to tilt the specimen around two axes and to detect forces in two directions. 1400 Wed-C5-c11 Microfabrication of an integrated photoconductive switch and Ultrafast Beam Blanker I.G.C. (Gerward) Weppelman a, R.F.C. van Tol b, C.T.H. Heerkens a, R.J. Moerland a, J.P. Hoogenboom a, P. Kruit a a TU Delft; b DEMO, TU Delft, The Netherlands We discuss a micron sized blanker integrated with a photoconductive switch for Ultrafast Electron Microscopy.

The photoconductive switch is illuminated with femtosecond laser pulses, hence the beam blanker is jitter free locked to the laser and is capable of blanking an electron beam at ultrafast timescales. 1415 Wed-C5-c12 NV-center diamond cantilevers: extending the range of available fabrication methods J. Kleinlein, T. Borzenko, F. Muenzhuber, J. Brehm, T. Kiessling, L. W. Molenkamp Universitaet Wuerzburg, Germany We present an alternative fabrication process for single crystal diamond cantilevers containing NV-centers. Our method extends existent technology (100 kV electron beam lithography/ICP deep etching) to lower electron voltages (30 kV) and standard RIE etching. We confirm the presence of NV-centers using photoluminescence measurements.

Cluster D Micro and Nano Technology for Bio/Life Sciences D4 - Micro and Nanofluidics for Biology and Life Sciences Lecture Hall: Mississippi Session Chair: Albert van der Berg (Univ. Twente, NL) time 1330 Wed-D4-c1 Preparation of highly porous PLGA microparticles using droplet fission and gelatin porogen Chul Min Kim, Asad Ullah, Gyu Man Kim Kyungpook National University, Daegu, South Korea Porous microparticles have many advantages including large surface area and high interconnectivity. Here we present a simple method to fabricate highly porous PLGA microbeads by using a microfluidic device with T-junction breakup and gelatin as porogen. The prepared microparticles were used as carriers for cells and CNT. 1345 Wed-D4-c2 SU-8 micro-pillars suspended on Si3N4 membranes: a superhydrophobic chip for in-situ X-ray diffraction studies on bio-soft matter Angelo Accardo a, Giovanni Marinaro a, Manfred Burghammer b, Christian Riekel b, Francesco De Angelis a aIstituto Italiano di Tecnologia, Genova, Italy bEuropean Synchrotron Radiation Facility, Grenoble, France Here we report the fabrication of superhydrophobic chips based on SU-8 micro-pillars suspended on Si3N4 membranes. The devices, characterized by high X-ray transparency, allowed revealing crystalline macro-domains of highly oriented tobacco mosaic virus rod-like structures and represent a tool for investigating bio-soft matter

aggregation. 1400 Wed-D4-c3 Active porous valves for droplet flow manipulation in open channel fluidics N. Vourdas, K. Dalamagkidis and V.N. Stathopoulos Technological Educational Institute of Sterea Ellada, Psahna, Greece Incorporation of materials and systems with controllable wetting properties is a key issue for microfluidics. Recently we presented an alternative methodology for reversible wetting transitions on porous media, by means of backpressure. We explore the application of our methodology in fluidic-related applications, for valving and pumpless droplet transport. 1415 Wed-D4-c4 Microfluidic Chips for Studying Mass Transport across Permeable Vascular Walls in Drug Delivery Chiara Manneschi a, Marco Francardi a, Daniele di Mascolo a, Aeju Lee a, Paolo Decuzzi a, b aIstituto Italiano di Tecnologia, Genova, Italy; bThe Methodist Hospital Research Institute, Houston, TX USA We present a microfluidic model for a permeable vascular wall. The vascular and extravascular channels are separated by a PDMS membrane made of high aspect-ratio pillars providing separation between cells but high interaction between them. This microfluidic chip represents a useful tool to study the particle transport for theragnostics.

Plenary Session 3 Lecture Hall: World Forum Theatre Session Chair: Urs Staufer (TU Delft, NL)

1445 Wed-Keynote-4 Advanced centrifugal microfluidics for Point-of-Care Applications R. Zengerle University of Freiburg and ‘Hahn-Schickard Gesellschaft für angewandte Forschung’, Freiburg, Germany We demonstrate sample-to-answer assays for Point-of-Care applications by using centrifugal microfluidics. Additionally we show advanced centrifugal unit operations like integrated pneumatic pumping and the merging of droplet microfluidics with centrifugal microfluidics for digital amplification assays. 1530 Announcements

1540 Wednesday Poster Session and Exhibition until odd number posters 1800

Wed-A-p1 Fabrication of continuous relief structured mask by single point diamond tool turning Weiguo Zhang a,b, Guodong Zhu a, Dong Zhang a, Fenglei Liu a, Xin Xiong a, Liangping Xia a, Deqiang Wang a, Chunlei Du a,b a Chongqing Institute of Green and Intelligent Technology, Chongqing, China; b Chongqing University, Chongqing, China We have worked on the method to fabricate continuous relief micro- optics mask by single point diamond turning, and successfully fabricated photoresist Fresnel lens with 1nm surface roughness, which has 100 micrometer width and 2 micrometer height. Based on this micro-optics mask, we are exploring some micro-optics. Wed-A-p3 Improving pattern fidelity in helium ion beam lithography using pixel dose optimization Nima Kalhor a, Wouter Mulckhuyse b, Paul Alkemade a, Diederik Maas b a Delft University of Technology, The Netherlands; b TNO Science and Industry, Delft, The Netherlands We discuss the potential of scanning helium ion beam lithography (SHIBL) for pre-screening EUV resists. We introduce optimized-pixel- dose SHIBL to improve critical dimension uniformity, line width roughness, exposure latitude and throughput gain. Moreover, our heuristic resist activation model agrees well with our single-pixel SHIBL experiments. Wed-A-p5 Buried binary blazed grating Janne Laukkanen, Toni Saastamoinen, Markku Kuittinen University of Eastern Finland, Joensuu, Finland A fabrication process for a new type of effective medium blazed grating is presented. The method utilizes electron beam lithography and ALD. The base structure is made of HSQ and it is buried with TiO2. The resulting structure is rigid and provides high diffraction efficiency for the -1 diffraction order. Wed-A-p7 High-resolution electron beam lithography patterning of germanium with hydrogen silsesquioxane resist Anushka Gangnaik a,b, Yordan M. Georgiev a,b,c, Justin Holmes a,b a Tyndall National Institute and University College Cork, Ireland. b AMBER@CRANN, Trinity College Dublin, Ireland.

c On leave of absence from the Institute of Electronics, Bulgarian Academy of Sciences, Sofia, Bulgaria High-resolution Ge patterning with EBL and HSQ is problematic: native Ge oxides are soluble in aqueous based HSQ developers and lift-off the HSQ structures. We propose a novel technique to clean Ge surfaces prior to patterning, which allowed successful fabrication of 5 nm Ge nanowires on GeOI substrates. Wed-A-p9 A study of metal-assisted chemical etching for deep silicon hole arrays Xin Li, Jianpeng Liu, Jinhai Shao, Bingrui Lu, Yifang Chen Fudan University, China We have initially developed a MaCE process for fabrication of high aspect ratio silicon pores in the dimension down to sub-micrometers. Our initial results have shown a promising avenue to the application of light collimators. It also should be used in TSV, and super capacitors. Wed-A-p11 Focused ion beam strategies for high throughput and high aspect ratio pillars M. Pea a, L. Maiolo a, A. Rinaldi b,c, R. Araneo d, E. Giovine a, L. Di Gaspare d, M. De Seta e, A. Notargiacomo a a CNR, Rome; b University of L'Aquila, Cisterna di Latina (LT); c ENEA, Rome; d Sapienza University of Rome; e Università Roma TRE, Rome, Italy Results of FIB milling zinc oxide and germanium samples with and without a masking metal layer are reported. Different milling strategies for patterning pillar structures are discussed. Better control over the sidewall shape and faster patterning capabilities are obtained, respectively. Wed-A-p13 Quality control of JEOL JBX-9500 E-beam lithography system in a multi-user laboratory Tine Greibe, Thomas Aarøe Anhøj, Anpan Han, Leif S. Johansen Technical University of Denmark, Lyngby, Denmark Our quality control includes testing of pattern position accuracy, dynamic focus and astigmatism, and high resolution writing. We minimized overlay accuracy to ~5nm. 12 nm linewidths have been obtained in ~50nm resist. Our quality control procedure ensures consistent high performance for our users and preventive maintenance awareness for instrument engineers. Wed-A-p15 Pulse electron beam from InGaN photocathode with negative electron affinity Daiki Sato, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano Nagoya University, Japan

Photocathode using InGaN with negative electron affinity can be utilizes in industrial technologies such as electron beam processing and electron microscopes, because their photoemission can be used in applications such as large electron beam current and pulse electron beam. We measured a pulse electron beam of the InGaN photocathode. Wed-A-p17 10 nm T-gates by a double patterning process with electron beam lithography and dry etch Jinhai Shao, Jianpeng Liu,Sichao Zhang, Bing-Rui Lu, Yifang Chen Fudan University, Shanghai, China We have developed a novel process for achieving 10 nm T shape gates standing on a SiNx ridge as a mechanical supporting facility.This process is reproducible with good successful yield for 10 nm T gates. Such an ultra narrow gate enables us to achieve high frequency in THz regime. Wed-A-p19 Thermal roll to roll nanoimprint using replica mould made by UV curable resin Shohei Kakimoto a, Noriyuki Unno a, Tapio Mäkelä b, Shin Hiwasa c, Jun Taniguchi a a Tokyo University of Science, Katsushika-ku, Tokyo, Japan b VTT Printed and Hybrid Functionalities, Espoo, Finland c Autex Co., Ltd., Shinjuku-ku, Tokyo, Japan We performed thermal roll to roll nanoimprint (RTRNIL) using replica moulds made by an UV curable resin containing a fluorinated component. Consequently, we succeeded in thermal RTRNIL without any release agent. We will exam the transfer characteristics using the three kinds of UV curable resin for the replica mould. Wed-A-p21 Fabrication of antireflection structures on optical lens surface using liquid transfer imprint technique Tomoya Uchida a, Feng Yu b, Mizuhisa Nihei b, Jun Taniguchi a a Tokyo University of Science, Katsusika, Tokyo, Japan b HUAWEI TECHNOLOGIES JAPAN K.K., Kanagawa, Yokohama, Kanagawa, Japan In this study, we attempted novel LTIL process using roll press method. As a result, we have successfully fabricated ARS which has low reflection and thin residual layer on curved surface of lens. This novel process is suited to fabricate ARS on the curved surface. Wed-A-p23 Comparison of surface relief Bragg gratings fabricated by UV-SCIL and volume index Bragg gratings based on hybrid polymers M. Förthner a,d, M. Rumler b,d, M. Rommel b, L. Frey a,b,d, M. Girschikofsky c, S. Belle c, R. Hellmann c a University of Erlangen-Nuremberg, Erlangen, Germany; b Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen,

Germany; c University of Applied Sciences Aschaffenburg, Aschaffenburg, Germany; d Graduate School in Advanced Optical Technologies, Erlangen, Germany This work compares two fabrication approaches for Bragg Gratings on imprinted hybrid polymer waveguides. The Bragg Grating is either introduced via excimer laser-irradiation (volume index grating) or printed together with the waveguide structure (surface relief grating). Functionality and sensitivity of both grating types will be discussed. Wed-A-p25 Roll-to-roll liquid transfer imprint lithography for patterning on a large-area roll Hyungjun Lim a,b, Sanghee Jung a, Junhyoung Ahn a, Sangwook Lee a, Kee-Bong Choi a,b, Geehong Kim a,b, Soongeun Kwon a, Sunghwi Lee a, Jaejong Lee a,b a Korea Institute of Machinery and Materials, Daejeon, South Korea b University of Science and Technology, Daejeon, South Korea This work seeks to verify the possibility of the liquid transfer imprint lithography (LTIL) process from a small roll to another large roll. By repeating this process, we fabricated nanopatterns on a roll which was 1,000 mm long. Wed-A-p27 Hydrophobicity and anti-icing performance of nanoimprinted fluoropolymers films under overcooled temperature J. Durret, N. Frolet, M. Panabière, C. Gourgon CNRS/Uni. Grenoble Alpes/CEA LETI, Grenoble, France Flexible films of fluoropolymers were structured by NIL with different structures in order to study their hydrophobic and icephobic behavior. Contact Angle water has been measured at room temperature and under overcooled conditions. We characterized the anti-icing performance by measuring the freezing delay of a droplet and frost propagation. Wed-A-p29 Hybrid pattern mold fabrication using liquid transfer technique and succeeding dry etching Hiroshi Kigami, Jun Taniguchi Tokyo University of Science, Katsushika-ku, Tokyo, Japan We investigated reduction of residual layer on LTIL process, dry etching condition, and fabrication method of silicon mold with hybrid pattern. We obtained holes patterns Si mold on curved surface and our technique will enable to fabricate lenticular lens shapes with moth-eye structures. Wed-A-p31 Ag-nanoparticles/Al2O3/Au-nanograting hybrid nanostructure for Surface-Enhanced Raman Scattering Yujin Wang, Junjie Li, Aizi Jin, Zhe Liu, Baogang Quan, Changzhi Gu Beijing National Laboratory for Condensed Matter Physics, Chinese Academic of Sciences, Beijing, China

Considering of the low-cost and high reproduction during the fabrication process, we provide a feasible SERS substrate using simply fabrication method, and the kind of hybrid nanostructure substrates have great application potential for detection and analysis. Wed-A-p33 Localized liquid crystalline molecular orientation in line and space pattern fabricated by double nanoimprint-graphoepitaxy Makoto Okada a, Yusuke Taniguchi a, Yuichi Haruyama a, Hiroshi Onob, Nobuhiro Kawatsuki a, Shinji Matsui a a Univ. of Hyogo, Japan; b Nagaoka Univ. of Technology, Nagaoka, Nigata, Japan We carried out double nanoimprint-graphoepitaxy for a photo-cross- likable liquid crystalline polymer (PLCP) and the localized LC molecular orientation in line and space pattern was induced. Wed-A-p35 A nanotransfer technique for silver ink using ultraviolet roll to roll nanoimprint Kai Ojima, Noriyuki Unno, Ryuichi Wakamatsu, Jun Taniguchi Tokyo University of Science, Katsushika-ku, Tokyo, Japan Nanotransfer printing for a silver ink pattern using ultraviolet roll to roll nanoimprint is performed. In addition, roll-to-roll liquid transfer imprint lithography was used to reduce the residual thickness of the ink. Consequently, we succeeded in the fabrication of nanoscale metal line pattern in air using the ink. Wed-A-p37 High fidelity nanoimprint lithography verified by scatterometry M. Eibelhuber a, H. Zaglmayr a, T. Glinsner a, T. Uhrmann a, M. Wollenweber b, J. Engelmann b a EV Group, St. Florian am Inn, Austria; b KLA Tencor, Dresden, Germany Equipment and processes are closely linked to the performance of nanotechnology, biotechnology and photonic devices. The availability and technical verification of ellipsometry as a metrology method and the high pattern fidelity over large numbers of imprints qualifies soft UV-NIL for industrial applications. Wed-A-p39 Improved replication of microfeatures by hot embossing with surfactant-added polydimethylsiloxane (PDMS) mold Bom-yee Lee, Bong-Kee Lee Chonnam National University, Gwangju, Republic of Korea In this study, hot embossing using a surfactant-added polydimethylsiloxane mold was investigated to improve a replication of microfeatures. To elucidate effects of the mold surface, which was changed to have an increased surface energy by adding the surfactant, hot embossing experiments under various processing conditions were performed and analyzed.

Wed-A-p41 Real-time measurement of replication degree in thermal roller nanoimprinting K. Hishiki a, K. Nagato a,b, K. Takahashi a, T. Hamaguchi a, M. Nakao a a The University of Tokyo, Japan; b JST PRESTO, Tokyo, Japan We clarified the relationship between the diffraction intensity and the replication degree in a flat mold and measured the diffraction intensity in a roller mold and estimated the replication degree by the calibration for real-time measurement in thermal roller nanoimprinting. Wed-A-p43 Evaluation of UV-NIL stamp materials for the replication of T-shaped nanostructures M. Mühlberger a, A. Prinz b, P. Taus c, H. Außerhuber a, J. Danzberger a, H.D. Wanzenboeck c a Profactor GmbH, Steyr, Austria; b SONY DADC Austria AG, Anif, Austria; c Vienna Technical University, Austria We investigate the influence of working stamp material properties on the nanoimprint replication of undercut T-shaped structures. Masters with T-shaped structures were fabricated using optical lithography and phase transition mastering. These masters were used to fabricate working stamps, which were then used for nanoimprinting. Wed-A-p45 Residual-layer-free nanoimprint lithography using UV curable polymer resin Junhyoung Ahn, Sanghee Jeong, Hyungjun Lim, JaeJong Lee Nano Convergence Mechanical Systems Research Division, Korea Institute of Machinery & Materials PUA-based UV curable resin was developed, and the residual-layer- free NIL was demonstrated with the various patterns on Si wafer substrates. With this method, etching process for removing residual layers can be needed no more. Moreover, cost and time will be saving, and NIL process can be simplified. Wed-A-p47 Positive greyscale photoresist for 3D patterning by direct writing or greyscale mask lithography Christine Schuster a, Anja Voigt a, Marina Heinrich a, Dominique Colle b, Gabi Grützner a a micro resist technology GmbH, Berlin, Germany, b Heidelberg Instruments Mikrotechnik GmbH, Heidelberg, Germany A positive photoresist has been developed especially for the requirements of 3D patterning by greyscale lithography. Its excellent suitability both for direct writing lithography and for greyscale mask lithography is proven. An example for the pattern transfer by UV moulding is presented.

Wed-A-p49 Helium ion beam lithography on fullerene molecular resists for sub- 10 nm patterning Xiaoqing Shi a, Philip Prewett b, Ejaz Huq b, Darren M Bagnall c, Alex P G Robinson d, Stuart A Boden a a University of Southampton, UK; b Oxford Scientific Consultants Ltd., Dorchester, Oxfordshire, UK; c The University of New South Wales 3, Sydney, Australia; d University of Birmingham, UK Here we present the latest results on novel fullerene resist using high resolution and sensitivity helium ion beam lithography. Continuous well-defined 18 nm-pitched lines and 12 nm-pitched resolvable lines were demonstrated showing helium ion beam lithography as an alternative to EBL for superfine and dense rapid prototyping. Wed-A-p51 UV-curable hybrid polymers enabling multiple manufacturing schemes for complex (micro)optical components J. J. Klein a, M. M. Russew a, A. Schleunitz a, R. Houbertz b, E. Harnisch c, G. Grützner a a micro resist technology GmbH, Berlin, Germany; b Multiphoton Optics GmbH, Würzburg, Germany; c Fraunhofer-Institute for Production Technology IPT, Aachen, Germany Firstly, we report on two newly developed UV-curable hybrid polymer materials with focus on high refractive index and PDMS compatibility. Secondly, we present the extension of OrmoComp’s processability from 2D to 3D by the employment of two-photon absorption lithography. Wed-A-p53 Evaluation of mr-PosEBR - a novel positive tone resist for high resolution electron-beam lithography Stefan Pfirrmann a, Olga Lohse b, Anja Voigt a, Irina Harder b, Anett Kolander a, Gabi Grützner a a micro resist technology GmbH, Berlin, Germany b Max Planck Institute for the Science of Light, Erlangen, Germany Herein, we present lithographic results obtained with a newly developed positive tone electron beam resist mr-PosEBR. The resist material was specifically tailored to meet the needs for high resolution, sensitivity and etch resistance. Under the conditions tested it performs comparably to the high resolution resist ZEP-520A. Wed-A-p55 High resolution resists based on polyacetals main chain scission Manouras Theodoros a,b,c, Olziersky Antonios b, Argitis Panagiotis b a FORTH, Heraklion; b NCSR Demokritos, Aghia Paraskevi; c Opticon ABEE, Tripoli-Peloponnesus, Greece The main target of the current work was to develop new polymeric materials for lithographic applications, the main chain of which is cleaved under the influence of photogenerated acid. Imaging

experiments using high resolution e-beam system have demonstrated capability for sub 50 nm closed-spaced lines. Wed-A-p57 Patterning of melamine and SiO2 microsphere lens arrays Gergely Huszka, Hui Yang, Martin A.M. Gijs EPFL, Lausanne, Switzerland We propose an electrostatic method for patterning of melamine microspheres in a parylene-c template and a mechanical swiping method for patterning of SiO2 microspheres in a photoresist template to realize microlens arrays to be used in high-resolution imaging applications. Wed-A-p59 Impact of simulation parameters of the block copolymer lithography with the nanoimprint lithography S.-K. Kim Hanyang University, Ansan, Republic of Korea, Hongik University, Seoul Republic of Korea The block copolymer lithography (BCPL) with NIL is modeled and simulated by using the Navier-Stokes equation for the nanoimprint lithography (NIL) and the self-consistent field theory (SCFT) for BCPs. Through these easy-to-optimize parameters, the BCPL with NIL for 10-nm node is discussed and predicted. Wed-A-p61 Localized catalytic chemical etching of silicon in water by platinum- coated atomic force microscope tip Kota Yamamoto, Shingo Fujii, Junji Sasano, Moeto Nagai, Takayuki Shibata Toyohashi University of Technology, Toyohashi, JAPAN We propose a novel nanofabrication technique based on highly localized chemical catalysis with a platinum-coated atomic force microscope tip. Nanoscale grooves can be fabricated on Si surface at room temperature via Pt-assisted catalytic chemical etching in just water without adding any chemicals to be used as an etchant. Wed-A-p63 Multi-level gratings patterning using Thermal Scanning Probe Lithography Sasa Ristic a , Matthieu Nannini a , Felix Holzner b, Philip Paul b, Peter Grutter a,b a McGill University, Montreal, Canada; b SwissLitho AG, Zurich, Switzerland World’s first commercial Thermal Scanning Probe Lithography tool is used for grayscale patterning of efficient silicon-on-insulator bi-level optical grating fiber-to-chip couplers. A tri-layer pattern transfer process is adopted for the fabrication of these devices. Etch selectivities for the tri-layer stack are presented.

Wed-A-p65 Microfabrication of multi-layered 3D pyrolysed carbon electrodes Suhith Hemanth, Claudia Caviglia, Letizia Amato, Stephan Sylvest Keller DTU Nanotech, Lyngby, Denmark This work presents the fabrication of multi-layered three-dimensional (3D) carbon microelectrodes for bioelectrochemistry. For this purpose, an optimized UV photolithography and pyrolysis process with the negative tone photoresist SU-8 has been developed. Wed-A-p67 Pattern perfection evaluation methodology for inkjet printed circuits Bo-Cin Huang, Hui-Ju Chan, Jian-Wei Hong, Cheng-Yao Lo National Tsing Hua University, Hsin Chu, Taiwan (R. O. C.) In this work, we propose an advanced methodology to quantitatively qualify inkjet printed circuits with both arithmetic-progress (AP) such as Archimedean spiral, and non-AP patterns such as logarithmic, hyperbolic, and lituus spirals. Limitations and effectiveness of this methodology were also studied. Wed-A-p69 Formation of micro- and nanostructures with well-rounded profile using a new e-beam lithography principle M.A. Bruk a, E.N. Zhikharev b, A.E. Rogozhin b, D.R. Streltsov c, V.A. Kalnov b, S.N. Averkin b, A.V. Spirin a a L.Ya. Karpov Institute of Physical Chemistry, Moscow, Russia b Physics and Technology Institute of the RAS, Moscow, Russia c Enikolopov Institute of Synthetic Polymer Materials of RAS, Moscow, Russia Micro- and nanostructures formation of well-rounded shape using an e-beam lithography is a huge task. Usually stair-like profile is used instead that complicates the process immensely. The problem can be solved using the dry method of relief formation in some resists during electron-beam exposure (DEBER method). Wed-A-p71 Comparison of soft thermal printing and lamination for the fabrication of high aspect ratio patterns on small-sized samples S. Abada a,b, L. Salvi a,b, E. Daran a,b, R. Courson a,b, B. Reig a,b, J.B. Doucet a,b, T. Camps a,b, S. Charlot a,b, V. Bardinal a,b a CNRS, Toulouse, France b Université de Toulouse, Toulouse, France Uniform fabrication of high aspect-ratio patterns on small-sized samples is demonstrated using a method called « soft thermal printing » and commercial thick epoxy dry film sheets (SUEX). Influence of printing temperature is detailed. Thickness profiles are successfully compared to the ones obtained with standard spin coating and with lamination.

Wed-A-p73 Periodic pattern formation using electric field driven material transport Santanu Talukder, Praveen Kumar, Rudra Pratap a Indian Institute of Science, Bangalore, India We propose an electric field induced, material transport based, novel, one step patterning technique to fabricate periodic ripple patterns. These rippled structures, having wavelengths of few µm to few hundreds nm and minimum channel width of 27 nm, are successfully used as optical grating to obtain diffraction patterns. Wed-A-p75 Integration of zinc oxide nanowires into flexible substrates for application in wearable technologies Atif Syed, Vasileios Koutsos, Enrico Mastropaolo The University of Edinburgh, UK In this paper we present a novel process to deposit metal layers directly on flexible substrates which ensures good metal layer quality and negligible physical damage when bending the substrates. Furthermore, synthesis of zinc oxide nanowires on the seed layer embedded into the flexible substrate will also be discussed. Wed-B-p1 Embedded gold micro heater in PDMS substrate using modified dry peel-off process Ryohei Ueno, Ikjoon Byun, Beomjoon Kim Institute of Industrial Science, Tokyo, Japan The paper describes a reliable transfer method of stable gold heaters to PDMS by a modified dry peel-off process. Three kinds of self- assembled mono-layers were applied for surface modification. The micro heaters were characterized by infrared thermal microscopy and compared with simulation results based on FEM. Wed-B-p3 Study on micromachining of Ga-doped ZnO thin films with picosecond laser pulses Zhao-Chi Chen a, Tien-Li Chang a, Wen-Yi Chen a, Shih-Feng Tseng b, Chieh-Fu Chang a, Chi-Huang Huang a a National Taiwan Normal University, Taiwan, R.O.C. b National Applied Research Laboratories, Taiwan, R.O.C. In this study, the ultra-fast-laser direct-write system was used a picosecond laser source in the ultraviolet (UV) to form the micro/nano-structures on the GZO surface. Based on this industrial laser process, it can provide the capability and flexibility necessary for future GZO-based sensor applications. Wed-B-p5 Thin film metallization of PDMS with improved adhesion properties for micro electrode arrays M. Scharin a,c, A. Al-Naimi a, T. Dirnecker a, M. Rumler b,c, M. Rommel b, L. Frey a,b,c

a University of Erlangen-Nuremberg, Erlangen, Germany; b Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, Germany; c Graduate School in Advanced Optical Technologies, Erlangen, Germany PDMS as flexible MEA substrate has gained growing interest, due to its biocompatibility and chemical inertness. The limited adhesion of thin metal layers for electrode formation still represents a major challenge that need to be addressed. Goal of this study is to manufacture adhesive, stable conductive Ti-layers on PDMS. Wed-B-p7 Design and fabrication of MEMS polysilicon bridges used for switching applications Angela Baracu a,b, Rodica Voicu a, Cosmin Obreja a a IMT Bucharest, Romania b University “Politehnica” of Bucharest, Bucharest, Romania The manufacturing of polysilicon bridges implies several important stages. Material properties are very important in fabrication process, because Characteristics as grain sizes, roughness or stress, can induce manufacturing errors. In such situations, design and technology can be a solution. These fabricated structures can be used for vibrational or switching applications. Wed-B-p9 Low cost fabrication of solid state nanopores in robust silicon wafer Milena Vega a, Pablo Granell b, Federico Golmar b, María José Diéguez c, Carlos Lasorsaa d , Sebastian Carbonetto e, Betiana Lernera f, Maximiliano Péreza f a National Technological University, Buenos Aires; b INTI-CMNB, San Martín, Buenos Aires; c INTA-Castelar “Ewald A. Favre t”, Buenos Aires; d National Atomic Energy Commission, Buenos Aires; e UBA, Buenos Aires; f INTEC (UNL-CONICET), Santa Fe, Argentina In this research an easy, reproducible and inexpensive technique for the production of solid state nanopores, using silicon wafer substrate is proposed. The method uses an automatic braking pore formation, without the intervention of an external agent, when this has dimensions of around 20 nm to 200 µm. Wed-B-p11 Development of technological platform for Argon ion beam etching to achieve perpendicular sidewalls Anja Weber a b, Eugenie Kirk a b, Patrick Matthes c d , Dennis Nissen c d, Harald Oezelt e, Thomas Schrefl e f, Manfred Albrecht c d, Laura Jane Heyderman a b a ETH Zurich, Switzerland; bPSI, Switzerland; c University of Augsburg, Germany; d Chemnitz University of Technology, Germany; e University of Applied Sciences Pölten, Austria; f Danube University Krems, Austria Novel exchange-coupled composite nanomagnets are of great interest for magnetic data storage, sensors or magnetic oscillators. Regarding this, we present a new process using Argon ion beam

etching (ArIBE) to structure large area, high-density arrays of magnetic dots with reproducible vertical sidewalls for tuneable and consistent properties. Wed-B-p13 Fluorine-based dry etching and selective surface functionalization of titanium dioxide nanostructures Seungkyu Ha, Richard Janissen, Yera Ussembayev, Maarten M. van Oene, Nynke H. Dekker Delft University of Technology, The Netherlands. We introduce a novel top-down nanofabrication method utilizing fluorine-based dry etching and chromium etch mask. It enables the fabrication of high aspect ratio titanium dioxide (rutile) nanostructures and nanoparticles, with controlled sidewall profiles. Furthermore, their surfaces are modifiable through a reliable surface functionalization method employing epoxysilanes as linkers. Wed-B-p15 Fabrication of high-aspect-ratio GaN nanostructures for advanced photonic devices E.D. Le Boulbar, C. J. Lewins, D.W.E. Allsopp, P.A. Shields, University of Bath, UK Dense arrays of high-aspect-ratio nitride semiconductor nanorods and nanoholes are created through optimisation of the plasma etch parameters. The high uniformity of such arrays have applications in advanced photonic devices incorporating photonic crystals and core- shell structures. Wed-B-p17 The graphene nanomeshes with precisely controlled narrow neck width Huizhen Zhang a, Chengchun Tang a, Haifang Yang a, Junjie Li a, Changzhi Gu a,b a Institute of Physics, Beijing, China; b Collaborative Innovation Center of Quantum Matter, Beijing, China A novel method to fabricate graphene nanomesh with neck width down to sub-10nm. With this method, the neck width can be controlled precisely, and the residual PMMA can also be avoided. The phenomena of local quantum confinement was observed. Wed-B-p19 Fabrication of anti-reflective structures to improve efficiency of photovoltaic solar cells Kuan-Tao Li, Yu-min Kao, Yen-Yu Chou, Yeeu-Chang Lee Chung Yuan Christian University, Chung-Li, Taiwan In this study, we developed a hybrid SWS array aimed at reducing the gradient of the refractive index in order to further reduce surface reflection. Hybrid SWSs were fabricated using PS-sphere colloidal lithography in conjunction with high-density plasma (HDP) etching.

Wed-B-p21 Metrology andy reproducibility in high resolution Electron Beam Induced Deposition S. Hari, T. Verduin, N. Lakens, C. W. Hagen, P. Kruit Delft University of Technology, The Netherlands Electron Beam Induced Deposition (EBID) has potential as an alternative lithography technique. We present a study of metrology, reproducibility and shape control of high resolution dense lines patterned by EBID in the electron current limited regime, with the aim of providing recipes to fabricate lines of any desired width. Wed-B-p23 Focused electron and ion beam induced deposition on flexible and transparent polycarbonate substrates J. M. De Teresa a , S. Sangiaob, P. Peinado a Universidad de Zaragoza-CSIC; b Fundación ARAID, Zaragoza, Spain Sub-100 nm-wide Pt-C, W-C and Co nanowires with appropriate electrical conduction values have been grown on flexible transparent polycarbonate substrates by FEBID and FIBID techniques. Additionally, a Pt-C diffraction grating in transmission mode has been built, showing sharp diffraction spots. Wed-B-p25 Direct deposition with pure gold nanostructures – Is it possible with FEBID? Mostafa Moonir Shawrav, Philipp Taus, Heinz D. Wanzenboeck, Sabine Schwarz, Michael Stöger-Pollach, Emmerich Bertagnolli Vienna University of Technology, Austria Focused electron beam induced deposited gold nanostructures suffers from low metal content which hampers the functionality of FEBID devices. This work will give a new direction to directly deposit highly pure FEBID gold structures. Wed-B-p27 Influence of stamp properties during UV-nanoimprinting on 3D printed surfaces T. Köpplmayr, L. Häusler, M. Mühlberger Profactor GmbH, Steyr-Gleink, Austria We use nanoimprint lithography with soft stamps to pattern curved surfaces of 3D printed parts. In addition to the challenge of the curved surface there is also the pronounced surface roughness of the 3D print. We investigate different stamp materials and the influence on the replication fidelity in this process. Wed-B-p29 Resist strategies for 3D electron beam grayscale and reflow patterning R. Kirchner, I. Vartiainen, V.A. Guzenko, H. Schift Paul Scherrer Institut, Villigen, Switzerland

This work compares different resist strategies for electron beam grayscale patterning and selective thermal reflow. For this purpose, the working horse positive tone grayscale resist PMMA is compared with the high-contrast resist ZEP520A. Wed-B-p31 SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces A.Talneau a, K.Pantzas a, A.Durnez a, G.Patriarche a ,D.Alamarguy b, E.Le Bourhis c a CNRS – LPN, Marcoussis; b Laboratoire GeePs Centrale Supelec, Gif- sur-Yvette; c Institut P', CNRS, Chasseneuil, France Oxide-mediated bonding of III-V layers on Silicon is demonstrated through ultra-thin –one monolayer- SiO2 ALD layer. XPS characterization of the SiO2 ALD layer evidences its surface activation with –OH dangling bonds, and allows determining the optimized ALD process parameters for a void-free bonded interface. Wed-B-p33 A novel thermal-aware structure of TSV cluster in 3D IC Ligang Hou, Jingyan Fu, Jinhui Wang, Na Gong Beijing University of Technology, Beijing, China In this paper, a novel structure of TSV cluster, which can effectively improve the utilization rate of area, is proposed to improve the thermal performance in 3D IC. Analyses of the basic cluster’s cells and TSV clusters’ simulations are provided. Wed-B-p35 New simple method for fabricating micro-lens arrays by directly replicating resist-mould patterns to transparent resin Toshiyuki Horiuchi, Ryunosuke Sasaki Tokyo Denki University, Tokyo, Japan A simple fabrication method of micro-lens arrays was developed. At first, resist mould patterns were formed using projection lithography with large defocus. Next, transparent epoxy resin was infused on them and hardened. The resin lens arrays were successfully obtained by peeling the wafer off and dissolving remained resist residues. Wed-B-p37 A high-current Scanning Electron Microscope with MBSEM optics Takashi Doi a,b, Minoru Yamazaki b, Takashi Ichimura b, Yan Ren a, Pieter Kruit a a Delft University of Technology, the Netherlands b Hitachi High-Technologies Co., Hitachinaka, Japan We have designed a new Multi-beam Scanning Electron Microscope (MBSEM) which potentially offers high-current. In this system primary electrons separated into 196 beams by Aperture Lens Array can be focused into one single spot by using a Micro Lens Array (MLA) in Objective lens.

Wed-B-p39 Thermal nanoimprint using lift-off patterns made by a polymer resin to fabricate a calibration plate for layer-total-internal- reflection-fluorescence method in water Nakata Shuichiro, Noriyuki Unno, Shin-ichi Satake, Jun Taniguchi Tokyo University of Science, Katsushika-ku, Tokyo Japan To fabricate nanosteps for the calibration of layer-TIRF, we performed nanoimprint technique using lift-off patterns made of a polymer resin whose refractive index is equal to water. The fabricated calibration plate has no residual layer and we succeeded in the multipoint calibration in water at the same time. Wed-B-p41 Static and dynamic mechanical characterization of two-photon lithography photoresists Enrico Domenico Lemma a,b, Francesco Rizzi a, Leonardo Sileo a, Barbara Spagnolo a,b, Tommaso Dattoma a, Antonio Qualtieri a, Massimo De Vittorio a,b, Ferruccio Pisanello a a Istituto Italiano di Tecnologia, Arnesano (Lecce), Italy b Università del Salento, Lecce, Italy We propose a new method to mechanically characterize photoresists for two-photon lithography. It is based on coupling static and dynamic methodologies (bending tests and laser Doppler vibrometry, respectively) to estimate elastic modulus, Poisson’s ratio and density of the investigated materials, resulting in a powerful tool for micromechanical engineering. Wed-B-p43 Crystal anisotropy effect on deformation of Ti-27Nb Ni-free biomedical shape-memory alloy evaluated by micro-compression test Takahisa Yasuda a, Nao Okano a, Tso-Fu Mark Chang a,b, Chun-Yi Chen a,b, Masaki Tahara a, Tomonari Inamura a, Hideki Hosoda a, Masato Sone a,b a Tokyo Institute of Technology, Yokohama, Japan b CREST, Yokohama, Japan Crystal anisotropy and size effect of nickel-free shape memory alloys, Ti-27Nb, were evaluated by a micro-compression test. Strength of the [111] micro-pillar was higher than that of the [101] micro-pillar. The shape memory effect was observed in the micro-pillar with [111] crystal orientation. Wed-B-p45 Improving scatterometry accuracy using hybrid metrology N.Figueiro a, S. Soulan a,b,c, J. Hazart c, S. Bos c, M. Besacier a,b,c a Université Grenoble Alpes, LTM; b CNRS, LTM; c CEA-Leti-Minatec, Grenoble, France Feature profiles control is critical for ensuring device performance and production yield. Metrology is a cornerstone on process control. Scatterometry presents high precision and speed but lacks accuracy in

comparison to CDSEM and CDAFM. We propose a hybrid metrology technique in order to improve scatterometry accuracy based on data fusion. Wed-B-p47 Design and fabrication of the graphene membranes on the advanced FoMaMet substrates Krzysztof Gajewski a, Anna Szumska a, Piotr Kunicki a, Stefan Goniszewski b,c, Ling Hao b, Andrzej Sierakowski d, Piotr Grabiec d, Teodor Gotszalk a a Wroclaw University of Technology, Wrocław, Poland; b National Physical Laboratory, Teddington, Middlesex, UK; c Imperial College London, UK; d Institute of Electron Technology, Piaseczno, Poland Graphene membranes became new member of the family of the vibrating devices. Nevertheless their production is still challenging. In this work we would like to present our way of producing suspended graphene on advanced FoMaMet devices. Here drawback of previous construction was elliminated, shown production method and characterisation. Wed-B-p49 Micro four-point probe measurement for line defects detection on 2D materials Xu Gong, Fei Wang South University of Science and Technology of China, Shenzhen, China It is generally difficult to detect the line defects such as the grain boundaries on 2D nano materials with optical microscopy. Micro four-point probe measurements may be useful to detect the boundaries. In this paper, we studied the resistance ratio Ra/Rb, which is sensitive to the line defects. Wed-B-p51 Fabrication and characterization of moth-eye mimicking nanostructured convex lens Hyuneui Lim a, Seung-Chul Park a, Seungmuk Ji a,b, Namsu Kim a,c a Korea Institute of Machinery and Materials, Daejeon, Republic of Korea; b Yonsei University, Incheon, Korea; c Hanyang University, Seoul, Korea Bio-inspired functional surfaces exhibit the amazing properties based on their adaptive hierarchical structures from macro-size to nano-size. Fabrication and antireflective behavior of transparent convex lens are observed with the elaborate controls of the nanopillars morphology. This technology will provide the practical approach in optical industry. Wed-B-p53 Fabrication of nanocone arrays by two step metal assisted chemical etching method Norihiro Tanaka, Tomohiro Shimizu, Takeshi Ito, Shoso Shingubara Kansai Univ., Suita-shi, Osaka, Japan Moth eye structure which has sub-wavelength periodical Si nanocone structure on a Si substrate has been studied as an anti-reflecting

layer. We demonstrated novel and simple method to fabricate Si nanocone arrays using two-step metal assisted etching with two different shape of metal catalyst. Wed-B-p55 A solution to reduce the effect of edge-placement errors by selective etching and alternating-material self-aligned multiple patterning. Part I：Edge-placement yield modeling and optimization Ting Han, Hongyi Liu, Yijian Chen Peking University, Shenzhen, China We propose a novel patterning method by combining alternating- material self-aligned multiple patterning (altSAMP) processes and selective etching. Our research shows that this patterning approach will bear larger overlay errors and cut-hole CD variations, which gets a larger process window and reduces the effect of edge-placement errors. Wed-C-p1 Localized growth of SnO2 NWs on top of microhotplates for their integration into micromachined gas sensing devices Jordi Samà a, Juan Daniel Prades a, Olga Casals a, Sven Barth b, Joaquin Santander c, Carles Cané c, Isabel Gracia c, Francisco Hernández- Ramírez d, Albert Romano-Rodriguez a a Universitat de Barcelona, Barcelona, Spain; b Technical University of Vienna, Austria; c CSIC, Bellaterra, Spain; d IREC, Barcelona, Spain Localized growth of nanowires on top of CMOS compatible microhotplates has been carried out and gas sensors based on this fabrication methodology have been achieved. The gas sensing behavior of such devices has been tested towards different gases, proving the feasibility of the approach. Wed-C-p3 Micro-clamps for precise positioning of 120° silicon double mirrors in MOEMS-gyroscopes T. Niesel, A. Dietzel Institut für Mikrotechnik, Braunschweig, Germany This work describes the use of micromechanical Clamps for precise positioning of 120° silicon double mirrors in MOEMS-gyroscopes. Attention is paid both to the particular mirrors, as well as in the production and examination of the clamping elements. Wed-C-p5 High mechanical strength gold micro-components fabricated by pulse electroplating Chun-Yi Chen a,b, Masaharu Yoshiba a, Tso-Fu Mark Chang a,b, Daisuke Yamane a,b, Katsuyuki Machida a,b,c, Kazuya Masu a,b, Masato Sone a,b a Tokyo Institute of Technology, Yokohama, Japan; b CREST, Yokohama, Japan; c NTT, Kanagawa, Japan Au micro-pillars were obtained from the film fabricated by pulse electroplating. The pillar showed a high compressive strength of 800

MPa. This strength is much higher than that of bulk Au materials, and even higher than 600 MPa of the micro-pillar fabricated from the commercially available Au film. Wed-C-p7 Effect of surface modification on charge generation in a Triboelectric Nanogenerator M. A. Parvez Mahmud a, Jaejong Lee a,b, Geehong Kim a,b, Hyungjun Lim a,b, Kee-Bong Choi a,b a University of Science and Technology, Daejeon, South Korea b Korea Institute of Machinery and Materials, Daejeon, South Korea In Triboelectric Nanogenerator, two contact surfaces of PDMS and PMMA were modified with pillar patterns to enhance power generation. The generated power was investigated with the diameter of the pillars. As a result, the smaller diameter of the pillar generated the higher power. Wed-C-p9 The precipitation strengthening behavior of Cu-Ni-Si alloy used as micro-components evaluated by micro-tensile tests Sari Yanagida a,b, Akiyoshi Araki c, Tso-Fu Mark Chang a,b, Chun-Yi Chen a,b, Takashi Nagoshi d, Equo Kobayashi c, Hideki Hosoda a, Tatsuo Sato a, Masato Sone a,b a Tokyo Institute of Technology, Yokohama, Japan b CREST, Yokohama, Japan c Tokyo Institute of Technology, Tokyo, Japan d National Institute of Advanced Industrial Science and Technology, Ibaraki, Japan Cu-Ni-Si alloy is a precipitation strengthening-type alloy and has excellent properties. However, there is still no report on micromechanical properties of the alloy. We report deformation behaviors of the Cu-Ni-Si alloy using micro-tensile test and the precipitation strengthening as compared with pure Cu. Wed-C-p11 A low mechanical noise tri-axis MEMS inertial sensor fabricated by multi-layered metal technology Daisuke Yamane a,b, Toshifumi Konishi c, Hiroshi Toshiyoshi a,b, Kazuya Masu a,b, Katsuyuki Machida a,b,c a CREST, Kawaguchi; b Tokyo Institute of Technology, Yokohama; c NTT, Atsugi; d The University of Tokyo, Tokyo, Japan We present the mechanical noise (Bn) evaluation of a tri-axis single proof mass MEMS inertial sensor fabricated by multi-layered metal technology. The measured Bns were more than one order of magnitude lower than those of conventional MEMS accelerometers made of silicon, when compared with the same device size. Wed-C-p13 Adhesive bonding for AFM probe fabrication Marco Becker, Christoph Richter, Thomas Sulzbach Nanoworld Services GmbH, Erlangen, Germany

This work presents a new approach for the fabrication of AFM probes using adhesive bonding for the permanent connection of a thin film cantilever and a holder chip. Cantilever and holder chip are fabricated independently from each other and bonded afterwards. AFM measurements shows the performance of these probes. Wed-C-p15 Uncooled MEMS detector of terahertz radiation T. Lalinský a, Š. Chromík b, P. Lobotka a, I. Rýger a, J. Zehetner b, J. Dzuba a, G. Vanko a a Institute of Electrical Engineering, Bratislava, Slovakia b Vorarlberg University of Applied Sciences, Dornbirn, Austria We present an uncooled MEMS THz detector using the bolometric sensing principle. Thermal conversion of the incident THz radiation absorbed by LSMO disc is performing using a thermally isolated 2µm thin SiO2/Si membrane patterned on SOI substrate by RIE. The detector functionality was verified by THz beam scanning. Wed-C-p17 Towards the inclusion of large area high-stress silicon nitride membranes in opto-mechanical devices E. Serra a,b,c,d, M. Bawaj e,f, M. Bonaldi g,b, A. Borielli g,b, G. Di Giuseppe e,f, S. Forte c,d, N. Kralj e,f, N. Malossi e,f, L. Marconi h, F. Marin h,i,l, B. Morana d, R. Natali e,f, A. Pontin h,i, F. Marino h,i, G. Pandraud d, G.A. Prodi b,c M. Rossi e,f, P. M. Sarro d, D. Vitali e,f a Fondazione Bruno Kessler, Trento; b INFN, Povo, TN; c Università di Trento, Povo, Trento, Italy; d Delft University of Technology, The Netherlands; e University of Camerino, (MC); f INFN, Sezione di Perugia; g Institute of Materials for Electronics and Magnetism, Povo (TN); h Università di Firenze, Sesto Fiorentino (FI); i CNR-INO, Firenze; l INFN, Sezione di Firenze, Sesto Fiorentino (FI), Italy Optomechanical coupling between a laser beam and a microdevice via radiation pressure is an emerging field in quantum-optics. We present a novel fabrication process and characterization of a large area high-stress SiN nanomembrane that will be included in state-of- the-art quantum optomechanics silicon devices. Wed-C-p19 Sample size effect on mechanical properties of electrodeposited gold evaluated by micro-compression test Masaharu Yoshiba a,b, Chun-Yi Chen a,b, Tso-Fu Mark Chang a,b, Katsuyuki Machida a,b,c, Daisuke Yamane a,b, Kazuya Masu a,b, Masato Sone a,b a CREST, Yokohama; b Tokyo Institute of Technology, Yokohama; c NTT, Kanagawa, Japan Gold has been applied as movable structures for MEMS devices. MEMS accelerometers made of gold, a high density material, could give a much higher sensitivity than that of silicon. In this study, micromechanical properties of commercially available electrodeposited pure gold films were evaluated by the micro-compression test.

Wed-C-p21 Large-area integration of metallic coatings on polyimide films using supercritical carbon dioxide Tso-Fu Mark Chang a,b, Cheng-Chuan Wang c, Chia-Ying Yen c, Shin- Hwa Chen c, Chun-Yi Chen a,b, Masato Sone a,b a Tokyo Institute of Technology, Yokohama, Japan; b CREST, Yokohama, Japan; c Industrial Technology Research Institute, Chutung, Hsinchu, Taiwan Metallization of polyimide films with dimensions of 12.0 X 4.5 cm2 was achieved utilizing catalyzation in pure supercritical carbon dioxide containing Pd(II) acetylacetonate. Adhesion strength of the Ni coatings on the polyimide films could be as high as 3.4 MPa. Wed-C-p23 Metrology of electromagnetically actuated microbridges using atomic force microscopy Magdalena Moczała a, Wojciech Majstrzyk a, Andrzej Sierakowski b, Rafał Dobrowolski b, Piotr Grabiec b, Teodor Gotszalk a a Wrocław University of Technology, Poland b Institute of Electron Technology, Warszawa, Poland We present the microbridges’ architecture (silicon nitride microbridge system with integrated metal paths enabling Lorentz force-based electromagnetic actuation), manufacturing process and wide characteristics including dynamic (measured using laser vibrometer) and static (measured using AFM) electromagnetically actuated response and a study of coupling between them. Wed-C-p25 A novel capacitive detection principle for Coriolis mass flow sensors enabling range/sensitivity tuning D. Alveringh a, J. Groenesteijn a, K. Ma a,b, R.J. Wiegerink a, J.C. Lötters a,c a MESA+, University of Twente, Enschede; b MicroCreate BV, Enschede; c Bronkhorst High-Tech BV, Ruurlo, The Netherlands We report on a novel capacitive detection principle for Coriolis mass flow sensors. One pair of comb-structures produces two signals with a phase shift dependent on the flow, another pair is used to cancel the actuation signal. This results in one order of magnitude larger phase shifts. Wed-C-p27 High-heat-transfer boiling surface with the combination of boehmite treatment and imprinting S. Yamada a, K. Nagato a,b, S. Miyazaki a, N. Shikazono a, M. Nakao a a The University of Tokyo, Japan b Research Fellow of Precursory Research for Embryonic Science and Technology (PRESTO), Japan Science and Technology Agency (JST) In a boiling surface, bubbles are generated and they enhance the heat flux. To control the generation of the bubbles for the higher heat flux, we proposed and demonstrated the high-heat-transfer

surface with the combination of the nanopattern by boehmite treatment and the micropattern by imprinting. Wed-C-p29 Build valves, pumps and connectors on thermoplastic chip in a manufacturable way Z. F. Wang, Y. C. Soh, S. A. M Shaegh, G. G. Toh, Z. P. Wang Singapore Institute of Manufacturing Technology, Singapore We’ve established innovative manufacturable solutions of integrating fluidic valves, pumps and connectors with plastic microfluidic chips. The microfluidic chips are mass-produced following the conventional manufacturing process, whereas the function modules (valve, pump and connector) are mass-produced separately, and assembled with the chip in high-throughput ways. Wed-C-p31 Rapid prototyping method of polymer microfluidic devices René Sanders, Johan van Eemeren, Hans van der Schaft, Fred Verhoeckx Philips Group Innovation, Netherlands We present a new method for laser ablation of microfluidic devices that is both accurate and flexible. Standard building blocks are accurately stitched together to fabricate smooth channels. Wed-C-p33 Advanced metrology tool for surface acoustic wave (SAW) devices Y.Yu a, P.Pingue b, M.Travagliati c, D.Mansfield a a Taylor Hobson Ltd, Leicester, UK; b Laboratorio NEST, Pisa, Italy; c Instituto Italiano di Tecnologia, Pisa, Italy The Coherence Correlation Interferometry instrument provides accurate 3D surface, film thickness and interface information. Through the knowledge of film structure, the HCF approach allows the PCOR-induced step-height error for both dissimilar material steps and thin film steps to be compensated so that the ‘true’ step-heights are determined Wed-C-p35 Fabrication and microanalysis of 3D-shell-like chiral nanostructure base on micro-sphere assembled technology Junyi Chen,Yidong Hou, Jinglei Du, Jianhua Zhu, Fuhua Gao Sichuan University, Chengdu, Sichuan, China In this paper, we report a simple, low-cost and high-efficient fabrication method for the fabrication of high performance 3D shell like chiral nanostructure (SLCS). Wed-C-p37 Scalable fabrication of high performance absorber based on colloid sphere lithography technology Yarong Su, Yidong Hou, Fuhua Gao, Jianhua Zhu, Jinglei Du Sichuan University ,Chengdu, Sichuan, China

In this paper, we report a simple, low-cost and highly-efficient method for the fabrication of large area (>1cm2) high-performance absorber working in visible region. In theory, this nearly-100% incident light can be absorbed by this device at the resonance frequency. Wed-C-p39 Simple electrodynamic transduction scheme for micromechanical resonators Maksymilian Kurek, Peter Emil Larsen, Silvan Schmid, Anja Boisen Technical University of Denmark, Lyngby, Denmark A simple approach for the electrodynamic transduction of micromechanical resonators is presented. A new chip design with two electrodes sitting on a string resonator allows to separate drive and detection signal. Like that the troublesome differential measurement scheme can be avoided, which significantly simplifies the experimental setup. Wed-C-p41 Development of absorptive WGP of 45nm line/space pattern Ji Yun Jeong, Young Tae Cho, Yoon Gyo Jung Changwon National University, Changwon-si, Gyeongsangnam-do, Korea We made the 45nm line/space pattern using nanoimprint process and we could be reduced the residual layer up to about 20nm thickness. We found that the Fe3O4 is etched by only fluorine gas. So, we developed the absorptive WGP of 45nm line/spcace pattern using CF4 gas. Wed-C-p43 Design of a micro servo stage using PZT actuators for the dual servo stage C. W. Lee, T. H. Ha, S. M. Kim, J. Y. Song, J. H. Lee, Y. J. Kim Korea Institute of Machinery and Materials, Daejeon, Korea Long-stroke precision stage is often used in the field of semiconductor and display production. The dual servo system is used to get a quick response and reduce the path error in the long-stroke. We design the fine stage that is decoupled and has a fast response characteristic. Wed-C-p45 Exchange coupled hard-FM/soft-FM and AFM/soft-FM nanostructures: production, characterization and modeling S. Laureti a, F. Spizzo b, P. Alippi a, A. Notargiacomo c, L. Businaro c, D. Peddis a, M. Albrecht d, M. Testa a, G. Varvaro a, E. Bonfiglioli b, M. Tamisari b,f, G. Barucca e, L. Del Bianco b, A. Gerardino c a ISM-CNR, Monterotondo Scalo, Roma, Italy; b Università di Ferrara, Ferrara, Italy; c IFN- CNR, Roma, Italy; d University of Chemnitz, Germany; e Università Politecnica delle Marche, Ancona, Italy; f CNISM and University of Perugia, Perugia, Italy

Two different patterned bilayers have been developed to realize a nano-spin-valve architecture: exchange-biased in-plane dots (soft- ferromagnetic (FM)/antiferromagnetic (AFM) dots) and Soft/Hard - FM perpendicular dots . Overall magnetic behaviour depends on exchange interaction between the two magnetic phases. Fabrication and characterization results will be reported. Wed-C-p47 Surface potential imaging of doping-concentration-modulated ultrathin silicon-on-insulator transistor channels under various biasing conditions Sheng Ye, Muhammad Khaled Husain, Shin-ichi Saito, and Yoshishige Tsuchiya University of Southampton, UK Characterise nano devices is important to improve stability of nano electronic devices. With carefully designed calibration sample we have successfully linked surface potential change with charge carrier manipulation with changing Vg and Vd. Nice consistency is also linked with IV characteristics. Wed-C-p49 SPR chip fabrication using silicon-on-quartz bonding Yeonsu Lee a, Sung-min Sim a, Eduardo Fontana b, Ignacio Llamas- Garro c, Gustavo Olivera Cavalcanti d, Jung-Mu Kim a a Chonbuk National University, Jeonju, Republic of Korea b Universidade Federal de Pernambuco, Recife, Brazil c Centre Tecnòlogic de Telecomunications de Catalunya, Castelldefels, Barcelona, Spain d Universidade de Pernambuco, Recife, Brazil In this study, the Otto configuration based SPR chip is designed and fabricated. The SPR effect was measured. The measured results agree well with the simulation results and the SoQ bonding is a feasible approach for implementation of Otto configuration based SPR chips. Wed-C-p51 Modified nanoantenna for infrared highly sensitive hydrogen detection Andrea Cerea a, Denis Garoli a, Pierfrancesco Zilio a, Michele Dipalo, Davide Bacco b, Maria G. Pelizzo b,Francesco De Angelis a a Istituto Italiano di Tecnologia, Genova; b CNR-IFN, Padova, Italy In this work 3D nanoantennas with a new design comprising a gold core and a thin palladium layer will be exploited in order to detect small exposure of hydrogen. The detection of permittivity change of the antennas covered of Pd that forms Pd hydride when exposed to hydrogen was investigated. Wed-C-p53 Atomic layer deposition of transition metal dichalcogenide 2D monolayer films for 3D device structures Adam M. Schwartzberg, Daniel Angell Lawrence Berkeley National Labs, Berkeley, California USA

Transition metal dichalcogenide (TMD) monolayer films possess unique optoelectronic properties, but are difficult to produce on the wafer scale with high uniformity and conformality while maintaining high quality. We present atomic layer deposition (ALD) produced TMD films coated conformally over tortuous surfaces and 3D devices while maintaining excellent optoelectronic properties. Wed-C-p55 Graphene based THz nano-gap sensors Jong-Kwon Lee a, Il-Suk Kang b, Hee Yeoun Kim b a Seoul National University, South Korea b National NanoFab Center, Daejeon, South Korea A tunability of light transmission for use in THz sensors has been demonstrated by combining graphene with Au nano-gap arrays. The enhanced absorption at resonance frequency of graphene reduces the transmission enhanced by large electric-field arising from the accumulated charges at the Au edge of nano-gap array. Wed-C-p57 Sub-nanosecond electron beam blanking for deep-subwavelength lifetime probing of nanophotonical devices Robert J. Moerland, Gerward (I.G.C.) Weppelman, Pieter Kruit, Jacob P. Hoogenboom Delft Technical University, The Netherlands Optical techniques are used to probe carrier or excited energy dynamics, but lack the resolution to address the nanoscale. Dedicated microscopes provide higher spatial resolution using pulsed beams of electrons. We show the creation of sub-nanosecond pulses in a standard electron microscope to probe time-resolved cathodoluminescence. Wed-C-p59 Deep subwavelength photonic multilayers fabricated by atomic layer deposition Evgeniy Shkondin a,b, Sergei V. Zhukovsky b,c, Andrei A. Andryieuski b, Osamu Takayama b, Radu Malureanu b , Mikkel Dysseholm Mar a, Andrei Lavrinenko b, Flemming Jensen a a DTU Danchip, Lyngby, Denmark; b DTU Fotonik, Lyngby, Denmark; c ITMO University, St. Petersburg, Russia

In this work we present the fabrication of Al2O3 and TiO2 photonic multilayers. Thickness of each layer in this structure is either 10 or 20 nm. In order to achieve such precision on large scale, we implemented atomic layer deposition technique. These nanodevices is believed to exhibit exotic optical phenomena. Wed-C-p61 Investigation of chemisorption processes on graphene using metal- dielectric-graphene structures Zoran Djurić, Ivana Jokić ITS SASA, Belgrade, Serbia; University of Belgrade, Serbia

Studying chemisorption in graphene is significant for fundamental research and practical applications. Functionalization or doping of graphene (to obtain properties necessary for sensing and electronics applications) is based on adsorption. In this work the theory is derived, which is applicable for analysis of chemisorption on graphene, using a MIG structure. Wed-C-p63 Effect of surface orientation and channel direction on aggressively scaled 16 nm FinFET stress engineering F. A. Md Rezali, N. Soin, S.Wan Muhamad Hatta, Li-Ya Ma, A.N. Nordin University of Malaya, Malaysia This 3D simulation approach investigates 16-nm FinFETs on various combination of surface orientation and channel direction to demonstrate its dependence on the device intrinsic performance. Other interests include short channel effects and pitch scaling characteristics are discussed in providing an extensive insight into FinFETs’ critical electrical figure of merit. Wed-C-p65 Top-down fabrication optimisation of ZnO nanowire FETs by sidewall smoothing Ghazali N.A.B., Ebert M., Ditshego N.M.J., de Planque M.R.R., Chong H.M.H. University of Southampton, U.K. We fabricated ZnO dual nanowire FET based on the spacer method. This study focus on optimizing the top-down nanowire process with reduced sidewall roughness during pattern transfer. The process involves photo resist reflow technique and dry oxidation of the etched silicon sidewalls. Wed-C-p67 Dependence of thermoelectric characteristics of ZnO nanofibers on thermal annealing Yoonbeom Park, Kyoungah Cho, Donghoon Lee, Sangsig Kim Korea University, Seoul, Korea We investigate in this study the effect of thermal annealing time on the thermoelectric characteristics for ZnO NFs prepared by electrospinning. The variation of thermal annealing time affects the morphologies of electrospun oxide NFs and consequently influences the thermoelectric performance. Wed-C-p69 Electrical characteristics of bendable a-IGZO TFTs as a function of bending radius Hyungon Oh, Sukhyung Park, Kyoungah Cho and Sangsig Kim Korea University, Seoul, Korea In this study, we fabricated a-IGZO TFTs directly on bendable plastic substrates without multilayered buffer and investigate the electrical characteristics of a-IGZO TFTs as a function of bending radius.

Wed-C-p71 Tuneable GexSbyTez phase change memory from electrodeposition Ruomeng Huang, Philip N. Bartlett, Sophie L. Benjamin, Andrew L. Hector, Andrew Jolleys, Gabriela P. Kissling, William Levason, Gillian Reid and C. H. (Kees) de Groot University of Southampton, United Kingdom We report here a tunable electrolyte bath suitable for the rapid electrodeposition of ternary GexSbyTez phase change materials. The composition of the GexSbyTez can be tuned by adjusting the concentration of the precursors and the deposition potential. Thin film memory cells are fabricated from these films, displaying good switching performance. Wed-C-p73 Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition Kian. S. Kiang, Ruomeng Huang, Kai Sun, C. H. de Groot University of Southampton, United Kingdom We have demonstrated the modulation of the electrical properties of ZnO film with PE-ALD, and the forming-free resistive switching is achieved by carefully chosen the initial resistive state of the as- deposited ZnO film. This enables the fabrication of multilayer complementary resistive switching memory in a single deposition. Wed-C-p75 Resistive switching characteristics in hafnium oxide and tantalum oxide bilayer devices Mi Ra Park a, Yawar Abbas a, Quanli Hu a, Haider Abbas a, Tae-Sik Yoon b, Chi Jung Kang a a Myongji-ro, Cheoin-gu, Yongin, Gyeonggi-do, Korea b Myongji University, Gyeonggi-do, Korea

The devices with Ta2O5-x/HfO2 and HfO2-y/TaO2 were fabricated, respectively. The Ta2O5-x and HfO2-y were the switching layers and the HfO2 and TaO2 severed as oxygen reservoirs. Wed-C-p77 Wafer-Level Encapsulation for BiCMOS embedded RF-MEMS Applications A. Göritz a, M. Lisker a, S. Tolunay a, M. Wietstruck a, M. Kaynak a,b a IHP, Frankfurt (Oder), Germany b Sabanci University, Tuzla, Turkey For cost efficient MEMS packaging, wafer-level encapsulation is the preferred solution. In this work we demonstrate a wafer-level encapsulation process (SiO2-deposition, T<250°C) for HF vapor phase released BiCMOS embedded RF-MEMS switches. The analysis has been done by FIB-SEM images and C-V measurements. Wed-C-p79 Multiple-cycle endurance of MEMS devices with sliding surfaces at various temperatures

Alkisti Gkouzou a, Jaap Kokorian a, G. C. A. M. Janssen a, W. Merlijn van Spengen a,b a Delft University of Technology, The Netherlands b Falco Systems B.V., Amsterdam, The Netherlands Sliding surfaces in MEMS devices are avoided due to friction, as their endurance is affected both by capillary condensation and changes in the surface topography during prolonged sliding. We study the evolution of friction in MEMS devices with self-heating contacting parts as a function of sliding cycles and temperature. Wed-C-p81 Structure stability of high aspect ratio Ti/Au two-layered cantilevers for applications in MEMS accelerometers Minami Teranishi a,b , Tso-Fu Mark Chang a,b, Chun-Yi Chen a,b, Toshifumi Konishi c, Katsuyuki Machida a,b,c, Hiroshi Toshiyoshi a,d, Daisuke Yamane a,b, Kazuya Masu a,b, Masato Sone a,b a CREST, Yokohama, Japan; b Tokyo Institute of Technology, Yokohama, Japan; c NTT, Atsugi, Kanagawa, Japan; d The University of Tokyo, Japan Structure stability of two-layered Ti/Au micro-cantilevers for applications as movable structure in MEMS accelerometers was evaluated and analyzed by COMSOL Multiphysics simulation. The stability was found to be high for the micro-cantilevers with length of 1000 μm, width of 5 μm, and thickness of 12 μm. Wed-C-p83 Photonic nanofences: high aspect ratio nanostructures as subwavelength waveguides V.J. Cadarso a, A. Llobera b, H. Schift a a Paul Scherrer Institut), Villigen, Switzerland b Institut de Microelectrònica de Barcelona, Bellaterra, Spain Polymeric photonic nanofences are here demonstrated as subwavelength waveguides. We do not only show that such structures present extremely high evanescent fields, but also that it is possible to combine them to form an effective waveguide that allows increasing the value of the evanescent field close to 20’000 times. Wed-C-p85 Developing 3-dimension PIN-type Si-nanodot solar cell Miftakhul Huda a,b, Sumio Hosaka a, Shin Yokoyama c, Masataka Fukuyama c, Hiroshi Sakurai a a Gunma University, Kiryu, Japan b Japan Society for the Promotion of Science, Tokyo, Japan c Hiroshima University, Kagamiyama, Japan 3-dimension PIN Si-nanodot solar cell was formed by pattern- transferring self-assembled BCP nanodots onto thin-film PIN solar cell. Experimental result shows that the photovoltaic effect of 3- dimension PIN Si-nanodot solar cell was 1000 times higher than thin film PIN solar cell.

Wed-C-p87 A three-dimensional polymer micro supercapacitor based on reduced graphene oxide hybrids S.L. Marasso a,c, R. Giardi a, D. Mombello a, S. Bianco a, A.Gigot a,b,M. Fontana a, M. Cocuzza a,c, P. Rivolo a, C.F. Pirri a,b a Politecnico di Torino, Chivasso (Turin), Italy; b CSHR@POLITO, Italian Institute of Technology, Torino, Italy; c CNR-IMEM, Parma, Italy A novel polydimethylsiloxane microsupercapacitor with reduced graphene oxide hybrid hydrogels, as electrode materials, is presented. The fabrication process provides cost reduction and easy manufacturing of the devices with the advantages of the photolithographic resolution and the flexibility of the polymer substrate, achieving a specific capacitance value of 62 mF/cm2. Wed-C-p89 Physical and electrical properties of high-k Yb2O3 and YbTixOy gate dielectrics for InGaZnO thin-film transistors Tung-Ming Pan a, Ching-Hung Chen a, Tung-Yu Wu a, Fu-Chien Chiu b a Chang Gung University, Taoyuan, Taiwan b Ming Chuan University, Taoyuan, Taiwan

In this paper, we developed high-k Yb2O3 and YbTixOy gate dielectrics for an indium-gallium-zinc oxide (IGZO) thin-film transistor (TFT) applications. Compared with the Yb2O3 dielectric, the IGZO TFT using the high-k YbTixOy gate dielectric exhibited better electrical characteristics. Wed-C-p91 ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique Fábio F. Vidor a, Thorsten Meyers a, Gilson I. Wirth b, Ulrich Hilleringmann a a University of Paderborn, Germany b Universidade Federal do Rio Grande do Sul, Porto Alegre, Brazil Aiming at flexible and transparent electronics, we present a ZnO nanoparticle TFT on flexible substrate using spray coating technique with a maximal process temperature of 115 °C. As template, an inverted coplanar structure on a polyethylene terephthalate (PET) substrate was integrated. The transistor transparency and electrical characteristics were evaluated. Wed-C-p93 Highly sensitive capacitive pressure sensors with electrospun polymer nanofibers Shin Jang, Yeongjun Kim, Hyounjin Kim, Je Hoon Oh Hanyang University, Ansan, Gyeonggi-do, Republic of Korea We present a high performance capacitive sensor based on electrospinning PVDF-TrFE nanofibers. Electrospun nanofibers are highly deformable due to their porous structure. The fabricated sensors show a high sensitivity, ~0.8 kPa-1, as well as a good absolute

capacitance. The sensors can be utilized in biosignal sensing applications. Wed-C-p95 Inclusion of gold nanoparticles in meso-porous silicon for the SERS analysis of cell adhesion on nano-structured surfaces Coluccio ML a, De Vitis S a, Strumbo G a, Candeloro P. a, Di Fabrizio E b, Gentile F a,c a University Magna Graecia, Catanzaro, Italy; b King Abdullah University of Science and Technology, Thuwal, Saudi Arabia; c University Federico II, Naples, Italy Porous Si substrates were fabricated and gold nano-particles were incorporated on their surface by electroless deposition technique. SERS devices were obtained and used for cells cultures. Raman maps on these cells showed the distribution of adhesion molecules which is dependent from the pattern nano-topography. Wed-C-p97 A new interpretation on shift of NMOSFET characteristic induced by wafer backside defect Sanghyeon Jeon, Hyuckchai Jung, Youngwoo Kim, Seunghwan Kim, Taehong Ha, Sangkyu Sun, Taewoo Lee, Haebum Lee, Insoo Cho Samsung Electronics Co., Banwol-Dong, Hwasung-City, Gyeonggi-Do, Republic of Korea We discovered a degradation of NMOSFET performance induced by Wafer backside defect for the first time. By exploiting measurement of C-V and mobility, we can explain that backside defect leads to a heat loss during oxidation process at high temperature. Wed-C-p99 High-performance nanopillar arrays with anti-reflective and antibacterial properties Wenwen Chen a,b, Zhaolu Diao a, Jan-Henning Dirks a, Fania Geiger a, Joachim Spatz a,b a Max Planck Institute for Intelligent Systems, Stuttgart, Germany b Heidelberg University, Germany We fabricate high-performance nanopillar arrays on silica substrates with both anti-reflective and anti-bacterial properties. The transmittance at an interface equipped with nanopillars can reach 99.5%. Surface coverage experiments with Staphylococcus sciuri showed significantly less bacteria attached to silica surfaces with nanopillars compared to plain ones. Wed-C-p101 Structural and sensing characteristics of Tb2O3 and Tb2Ti2O7 sensing films for electrolyte-insulator-semiconductor pH sensors Tung-Ming Pan a, Chih-Wei Wang a, Han-Xuan Xie a, Fu-Chien Chiu b a Chang Gung University, Taoyuan, Taiwan b Ming Chuan University, Taoyuan, Taiwan In this study, we proposed an electrolyte–insulator–semiconductor (EIS) device fabricating from Tb2O3 and Tb2Ti2O7 sensing films

deposited on Si substrates through reactive sputtering. Compared with the Tb2O3 sensing film, the EIS sensor using the Tb2Ti2O7 sensing film after annealing at 900 °C exhibited better pH sensing performances. Wed-C-p103 Development of a MEMS type six axis force-torque sensor Donggu Kim, Ilseon Yoo, Hyunsoo Kim Hyundai Motors Company, Uiwang-Si, Korea A six axis force-torque sensor was developed using MEMS strain gauge. The structure of the sensor was optimally designed by using DFSS. Main performance test of the developed sensor was carried out. Wed-C-p105 Electrical and optical properties of metal-doped indium-tin-oxide films: possible applications to GaN-based near-ultraviolet light- emitting diodes Min Ju Kim, Byoung Ryoung Lee, Myung Ju Kim, Kyung Rock Son, Tae Hoon Park, Tae Geun Kim Korea University, Seoul, Korea We proposed an effective method to enhance the optical and electrical properties of conventional indium-tin-oxide (ITO) films in terms of metal doping (here in, metal’s orbital energy gap should be large than that of In), for its possible application in the near- ultraviolet (NUV) region. Wed-C-p107 Oxynitride and silicon nitride wet etching for high voltage supply transistor formation Irina Kiryushina a, Gennady Krasnikov a, Denis Darvin b, Alexander Egorov a, Tatyana Egorova b, Andrey Islyaykin a, Yury Ozerin a, Sergey Ranchin a, Pavel Ignatov b a Mikron JSC, Moscow, Russia; b “MERI”, JSC, Moscow, Russia

The use of HF-last etching for oxynitride and H3PO4 with maintaining selectivity option for Si3N4 etching is demonstrated in this study. Different concentration and sequences of HF based chemistry were investigated for full oxynitride removal with slight impact on oxide layer. HF concentrations were varied up to 3%. Wed-D-p1 A simple implementation of an optical biosensor based on Raman Spectroscopy Immanuel Valpapuram a, Gerardo Perozziello a, Patrizio Candeloro a, Andrea Giugni b, Gobind Das b, Maria Laura Coluccio a, Pushpa MichealRaj a, Francesco Gentile c, Marco Allione b, Elvira Parrotta a, Pierangelo Veltri a, Gianni Cuda a, Enzo Di Fabrizio b,a a University “Magna Graecia” of Catanzaro, Catanzaro, Italy; b King Abdullah University of Science and Technology, Thuwal, Kingdom of Saudi Arabia; c University “Federico II” of Naples, Napoli, Italy

In this work we present the implementation of a biosensors integrating optical waveguides and Surface Enhanced Raman scattering (SERS) surfaces for the label-free detection of biological compounds. Wed-D-p3 Coating of platinum in high-aspect ratio nano-structures by atomic layer deposition and surface modification Lei Chen a, Houxun Miao b, Amit Vaish b, Vince Luciani a, Han Wen b a NIST, Gaithersburg, MD USA; b NIH, Bethesda, MD USA Conformal coating inside high-aspect-ratio nano-structures is a challenge for all the current thin film coating techniques. In this study, atomic layer deposition was used to coat Platinum (Pt) inside HAR nano-structures. Based on an optimized process, the effect of surface chemistry was studied in detail. Wed-D-p5 Rapid, cost-effective, disposal analytical platforms prepared by nanoimprinting technique for on-site detection of mercury (II) ions Shih-Yu Tseng, Shang-Yi Yi, Dehui Wan National Tsing Hua University, Hsinchu, Taiwan In this study, we develop a novel paper-based analytical platform for on-site detection of mercury ions. Combining with colorimetric analysis and smartphones, the metal nanoparticles arrays are designed for chemical sensors with easy-to-use, portability, low-cost, and excellent sensitivity. Wed-D-p7 Analysis of viscoelastic properties of carbon disulfide-based surface chemistry with quartz crystal microbalance for biosensing purposes Victor F. Martinez-Silva, M.A. Ramírez-Salinas, L.A. Villa-Vargas, A. Martinez-Rivas Instituto Politécnico Nacional, México D.F., México Here, we want to contribute with a deep carbon disulfide (CS2) study, which has the potential to be used as surface chemistry in nanobiosensor ,we obtained useful information related to viscoelastic properties of this surface chemistry and its bound state via a Quartz Crystal Microbalance with Dissipation (QCM-D). Wed-D-p9 Fabrication of a micro wells array with integrated micro-mirrors for an innovative Single-Plane Illumination Microscopy implementation Gianluca Grenci a,b, Remi Galland b,c, Jean-Baptiste Sibarita d, Vincent Studer d, Virgile Viasnoff b,c a CNR-IOM, TASC laboratory, Trieste (IT); b National University of Singapore, Singapore; c CNRS UMI, Singapore; d CNRS UMR, Bordeaux, France We present the fabrication of disposable cover slips comprising of an array of micro-wells flanked with micro-mirrors slanted at 45°. These chips make possible super-resolution single-plane illumination

microscopy up to 30 micron above the coverslip with a single objective for excitation and collection of fluorescent signal Wed-D-p11 A dopamine sensor on paper with printed carbon nanotube electrodes Tallis H. da Costa, Jin-Woo Choi University Baton Rouge, LA, USA This work presents an electrochemical sensor on a paper substrate, which is composed of printed carbon nanotube electrodes, for dopamine sensing. Carbon nanotubes are inkjet-printed to form a conductive path on paper, which works as electrodes of an electrochemical cell. Wed-D-p13 An EWOD mixer with high flexibility on dilution ratio Ying-Bin Wang, Meng-Shiue Lee, Jun-Hao Huang, Cheng-Yeh Huang, Wensyang Hsu, Yung-Yi Tu National Chiao Tung University, Hsinchu, Taiwan The proposed EWOD mixer design is shown to provide a simple and rapid method to generate droplet with highly flexible dilution ratio in the range from 1/2 to 1/51, which may easily integrate into a digital microfluidic system for biological or chemical analysis requiring flexible dilution ratio. Wed-D-p15 Multiplexed electrochemical detection of p-Coumaric acid on a lab- on-a-disc platform Kuldeep Sanger, Letizia Amato, Sheida Esmail Tehrani, Robert Burger, Arto Heiskanen, Anja Boisen Technical University of Denmark, Lyngby, Denmark We report the simultaneous electrochemical detection of p-Coumaric acid (pCA) in 8-separate chambers integrated with interdigitated gold microelectrodes (IMEs) on a lab-on-a-disc platform. The platform successfully quantified pCA using cyclic voltammetry and confirms its potential against traditional chromatographic detection techniques. Wed-D-p17 New electrode configuration to impedance wide-band frequency measurements for micro flow cytometry María Cabello Fusarés a, Óscar Castillo-Fernández a, Mauricio Moreno b, Francesc Xavier Muñoz a a CNM-IMB CSIC, Bellaterra, Spain b Electronics Department of University of Barcelona, Barcelona, Spain We present a new electrode configuration designed for micro flow impedance cytometry. The design combines a high metal-liquid interface area with a microstructures that allows a 3D electric field influence on the sensing volume. The electrodes performs a real impedance response for a wide band of frequencies.

Wed-D-p19 Surface-patterned PDMS cantilever for drug screening applications D. S. Kim, J.-Y Kim, Y.-S. Choi, E.-S. Kim, B.-K. Lee, D.-W. Lee Jeonnam National University, Kwangchu, Korea In this paper, we describe a polydimethylsiloxane (PDMS) cantilever with microgrooves and its application to drug toxicity test. Wed-D-p21 Advanced polymer materials for mass production of lab-on-chip systems K. Hoshiko a, Sara. Peeters a, R. Van Roosbroeck a, J. O’Callaghan c, B. Majeed c, K. Jans c, C.X. Liu c, M. Kaneko b, T. Uchida b, I. Nishimura b, E. Hayashi b, X. Buch a, K. Hieda b and P. Deshpande c a JSR Micro N.V., Leuven, 3001, Belgium; b JSR Corporation, Tokyo, 105-8640, Japan; c Imec, Leuven, 3001, Belgium Material choice is one of the most important factors to establish the state-of-art fabrication process of lab-on-chip systems. In this paper, the authors will introduce some unique materials such as photo- patternable adhesive together with their results we obtained in the recent applications for life sciences. Wed-D-p23 Characterization and application of nano- and microstructured silicon-polymer-based surfaces for manipulation of cells M. Scharin a,d, A. Haering a,c, D. Gilbert c,d, T. Dirnecker a, M. Rommel b, O. Friedrich c,d, L. Frey a,b,d a University of Erlangen-Nuremberg, Erlangen, Germany; b Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, Germany; c University of Erlangen-Nuremberg, Erlangen, Germany; d Graduate School in Advanced Optical Technologies, Erlangen, Germany Cellular processes can be manipulated using nano- or micropatterned surfaces. So far cell interaction with patterned surfaces cannot be predicted in general and, thus, systematic experimental studies have to be performed. In this work the influence of different patterned PDMS surface topography in the context of cell adhesion was investigated. Wed-D-p25 Microfluidic platform for pathogen load monitoring M. Jamalieh, G. Kokkinis, C.Haiden, T. Berris, F. Keplinger, I. Giouroudi Vienna University of Technology, Austria This paper presents a novel microfluidic diagnostic platform for pathogen load monitoring. The platform combines magnetic separation and optical detection in order to rapidly detect the presence of pathogens and provide additional clinical information (the pathogen load) in a simple, quick and compact manner without flow.

Wed-D-p27 Magnetic clamped microfluidic device for automated immunodiagnostic on biochips Erwan Crestel a,b, Julie Foncy b, Jean-Philippe Borges b, Aurore Estève b, Christophe Vieu b,c, Laurent Malaquin b , Emmanuelle Trévisiol b,d,e,f a Innopsys, Carbonne, France; b CNRS, LAAS, Toulouse, France; c Univ de Toulouse, Toulouse, France; d Université de Toulouse; INSA, UPS, INP; LISBP, Toulouse, France; e INRA, Toulouse, France; f CNRS, UMR, Toulouse, France To implement an automated biointeraction protocol on a biochip compatible with fluorescence analyze, we have developed a generic microfluidic interface that minimizes the volume of solutions, ensures its homogeneous repartition over the interaction spots of the chip and that is removable for optical reading, thanks to a reversible magnetic clamp. Wed-D-p29 Hand-operated bump array devices fabricated in low cost plastics Keith Morton, Lucas Poncelet, Xuyen Dai Hoa, Liviu Clime, Teodor Veres National Research Council Canada, Montreal, QC, Canada We fabricate all-plastic, deterministic lateral particle displacement devices (Bump Arrays) and demonstrate manual operation for application to a broad range of biological sample preparation tasks including blood cell fractionation, pathogen concentration and bead- based assays. Wed-D-p31 Thermodynamic capillary assembly for point-of-care diagnostics Anthony Leonard a,b, Olivier Lecarme a,b, Julien Cordeiro a,b, Kevin Berton a,b, David Peyrade a,b a Univ. Grenoble Alpes, Grenoble, France b CNRS, LTM, MINATEC Campus, Grenoble, France We show a new particle assembly method especially developed for point-of-care diagnostics. Thanks to a 3-steps control of mesoscopic forces, a fast and large area assembly of beads is achieved. We demonstrate the interest of such a technique for wide range and ultrasensitive detection of functionnalized microbeads. Wed-D-p33 Manipulations of superparamagnetic microparticles in confined space Yan-Hom Li a, Ting-Yu Su b, Ching-Yao Chen b, Ya-Wei Lee a a National Defense University, Tauyuan County, Taiwan b National Chiao Tung University, Hsinchu, Taiwan In this work, the oscillating chain in the confined space can be designed to mimic a single Magnetotactic Bacterium which has been used as an effective integrated propulsion and steering system for potential applications in the human blood vessels.

Wed-D-p37 Femtosecond-laser-structured nitrocellulose membranes for multi- parameter Point-of-Care diagnostic tests Lars Hecht a, Denise van Rossum b, Andreas Dietzel a a Technische Universität Braunschweig, Germany b Sartorius Stedium Biotech, Göttingen, Germany In order to address the drawbacks of lateral flow tests based on nitrocellulose membranes a novel laser fabrication method is presented. Using a femtosecond laser the membrane can be structured into barriers and channels without damaging the pore structure thus creating a reliable platform for multi-parameter PoC tests. Wed-D-p39 Spaced nanofiber layers for three-dimensional cell handling Bin Wang a, Jian Shi a, Yadong Tang a, Jin Wei a, Xiaolong Tu a, Yong Chen a,b,c a Ecole Normale Supérieure, Paris, France; b Kyoto University, Japan; c Jianghan University, Wuhan, China Micro- and nano-engineering techniques are promising to provide improved cell culture support that are useful for both fundamental research and advanced applications. we developed to combine approaches which allow fabricating consistently a new type of three- dimensional cell culture supports by mimicking the 3D organization of extracellular matrix proteins. Wed-D-p41 Nano Petri dish having physically microsectioned-nanoengineered surface (PMS-NES) for regulating cell morphology and alignment Kyoung Je Cha a, Moon-Hee Na b, Dong Sung Kim b a Korea Institute of Industrial Technology, Daegu, Korea; b Pohang University of Science and Technology, Pohang, Gyungbuk, Korea The cell-nanotophography interactions have the ability to control cell behaviors due to physical stimulation of the nanotopography. In this study, Nano Petri dish having a physically microsectioned nanoengineered surface (PMS-NES) was newly developed for regulating cell morphology and alignment. Wed-D-p43 High voltage insulation properties of DLC-Parylene multilayer films Michael Bangharda, Kamel Silmya, René von Metzena, Volker Bucherb a University of Tübingen, Reutlingen, Germany b Furtwangen University, Villingen-Schwenningen, Germany The goal of this applied industrial research and development project was to develop a thin electrical insulation film being pinhole free, non-thermal conductive and biocompatible. The thin film is based on multilayers of diamond like carbon (DLC) and a parylene layer on top. Wed-D-p45 2D RAMAN mapping of polymer and drug distribution in implantable PLGA microplates

M. Francardi a, D. Di Mascolo a, P. Decuzzi a,b a Istituto Italiano di Tecnologia, Genoa, Italy b The Methodist Hospital Research Institute, Huston, Texas, USA We present a quantitative characterization of (20x20x5)um PLGA u- Plates loaded with curcumin for drug delivery application. 2D RAMAN mapping are performed to evaluate: topography, loaded drug distribution, PLGA degradation in solution as a function of time. A complete analysis on the method for RAMAN quantification is done. Wed-D-p47 Plasmonic substrates by soft UV nanoimprint lithography for bimodal biochemical detection J.-F. Bryche a,b, F. Hamouda a, G. Barbillon a, J. Ruscica a, R. Gillibert c, M.-P. Plante a, J.Moreau b, M. Lamy de la Chapelle c, M. Canva b, B. Bartenlian a a Université Paris-Sud, Orsay, France; b CNRS, Palaiseau, France; c Université Paris 13, Bobigny, France A specific design of substrate is realized by soft UV-NIL to let a bimodal measurement of biological element. An array of gold nanodisks on gold layer on glass substrate is used to identify and quantify the target molecule thanks to Surface Plasmon Resonance Imaging and Surface Enhanced Raman Scattering. Wed-D-p49 Biomechanical cell regulation by high aspect ratio nanoimprinted pillars Felipe Viela a, Ángel Ayuso a,b, Daniel Granados a, Manuel Rodríguez a, Isabel Rodríguez a,b a Universitaria de Cantoblanco, Madrid, Spain b IMMA-CIOCC, San Bernardo, Madrid The response of progenitor neural stem cells to dense high aspect ratio polymer pillars in the nano and micro scale fabricated by nanoimprinting was investigated. Each topography distinctively impacted the cytoskeleton remodeling and distribution of the cellular tractions. Consequently, pronounced changes on the cell morphology and migration patterns were observed. Wed-D-p51 Structural and optical properties of non-polar a-plane ZnO/Mg0.2Zn0.8O multiple quantum wells grown by pulsed laser deposition B. H. Lin, S. C. Tseng, H. Y. Chen National Synchrotron Radiation Research Center, Hsinchu, Taiwan In this work, by means of synchrotron x-ray source to study the ZnO based multiple quantum wells. The correlation between the structural and optical properties will be discussed. Wed-D-p53 Gold and silver dimers for SERS applications Maria Laura Coluccio a, Gianluca Melino b, Gobind Das b, Salma Arasheed b, Francesco Gentile c, Patrizio Candoloro a, Enzo Di Fabriziob

a University “Magna Graecia” of Catanzaro, Catanzaro, Italy; b King Abdullah University of Science and Technology, Thuwal, Kingdom of Saudi Arabia; c University of Naples, Naples, Italy. Dimers composed of two nanospheres were fabricated in silver and in gold. These plasmonic devices were used for analysis of Rhodamine-6G monolayer. Raman mappings around dimers show the rhodamine spectrum contributing only from the metallic nanostructures with a very high enhancement for silver dimers. Wed-D-p55 A ferroelectric capacitive neural probe system possessing minimal mechanical strength and wireless measurement system Petronil Yves, J. Park, H. Oh, Y. Park, Keekeun Lee Ajou University, Suwon, S. Korea For the first time we developed chipless, wireless neural probe system based on the one-port SAW reflective delay line and neural- firing-dependent ferroelectric capacitors to observe the action potentials of neurons in particular regions in the brain.

Thursday Morning 24 September 2015

Plenary Session 4 Lecture Hall: World Forum Theatre Session Chairs: Hubert Brückl (Danube University Krems, AT) and Dieter Kern (Univ. Tuebingen, DE) time 0830 Award Ceremony

Thu-MNE-Fellow Quantitative technology, a joy forever E. van der Drift, MNE Fellow 2015 Delft University of Technology, The Netherlands

Cluster A - Micro and Nano Patterning A4.1 - Soft Lithography 1 Lecture Hall: Amazon Session Chair: Jens Gobrecht (PSI, CH) 0930 Thu-A4-c1 A new photo-curable PDMS with excellent master replication fidelity for fast fabrication of working stamps in soft UV-NIL applications. Manuel W. Thesen, Martin Messerschmidt, Gabi Grützner Micro resist technology GmbH, Berlin, Germany We present a new photo-curable PDMS stamp material that features extremely low volume shrinkage (only 0.02%) resulting in a superior stamp replication fidelity compared to thermally curable PDMS. Moreover, we demonstrate time effective replications of master stamps from different materials (silicon, quartz, nickel) indicating its ease of utility. 0945 Thu-A4-c2 Athermal nanoimprint lithography based on azobenzene resist Christian Probst a, Christoph Meichner a, Josef Kumpfmüller b, Thomas Glinsner b, Lothar Kador a, Hans-Werner Schmidt a, Christian Neuber a a University of Bayreuth, Germany b EV Group, St. Florian am Inn, Austria Our newly developed and straightforward approach of athermal azobenzene-based Nanoimprint Lithography (azo- NIL) combines Hot-Embossing and UV-NIL. The imprint process is allowed utilizing solid films which gets athermal photofluidized by light exposure. Using azo-NIL we demonstrate clear patterns ranging from microns- to 100 nm in size. 1000 Thu-A4-c3 Injection Moulding of hard and soft substrates with Micro- and Nanostructures. Anwer Saeed, John M. Stormonth-Darling, and Nikolaj Gadegaard. University of Glasgow, UK Flexible polymers are useful substrate materials in tissue engineering and we Injection moulded both polymers at micro- and nano scale. Injection moulding an industrially established technique commonly used to replicate the nanoscale features at such low cost and fast production rates over competing high throughput. 1015 Thu-A4-c4 High volume soft-stamp NIL, tooling and process design M.A. Verschuuren a, R. van Brakel a, R. Voorkamp a, M. Knight b, A. Polman b a Philips Corporate Technologies, Eindhoven, The Netherlands b FOM institute AMOLF, Amsterdam, The Netherlands Nanoimprint lithography is a promising technology for the cost effective fabrication of sub-micron and nano-patterns on large areas. We will discuss and explain the different trade- offs that can be made between NIL processes and post processing steps for various applications and the consequence for the optimal CoO.

1030 Break and Exhibition

A9 - Novel Techniques Lecture Hall: Amazon Session Chair: Andreu Llobera (CSIC, ES) 1100 Thu-A9-inv Wafer scale 3D-nanofabrication based on retraction edge lithography, corner lithography and anisotropic wet etching of silicon Erwin J.W. Berenschot a, Henri V. Jansen b, Edin Sarajlic c, Roald M. Tiggelaar a, Han J.G.E. Gardeniers a, Niels R. Tas a a MESA+, University of Twente, The Netherlands; b Enschede, the Netherlands; c SmartTip BV, Enschede, the Netherlands In this paper we present a number of techniques for the fabrication of three-dimensional nanostructures. Combined, these techniques form a powerful toolbox for wafer scale nanostructurefabrication. The main techniques that we develop and combine are retraction edge lithography, corner lithography, and anisotropic etching of the single crystalline substrate.

1130 Thu-A9-c1 Development of Paper-based Photolithography for Device Applications Michael Cooke, David Wood Durham University, UK Using standard paper as a substrate has a significant cost reduction implication over other more expensive substrate materials by a factor of 100. Discussed here is a novel process which allows photolithography and etching of simple metal films deposited on paper substrates, but requires no additional facilities to achieve it. 1145 Thu-A9-c2 High aspect ratio 10-nm-scale nanoaperture arrays with template-guided metal dewetting Ying Min Wang a, Liangxing Lu b, Bharathi Madurai Srinivasanb, Mohamed Asbahi a, Yong Wei Zhang b, Joel K.W. Yang a,c a Institute of Materials and Research Engineering, Singapore b Institute of High Performance Computing, Singapore c Singapore University of Technology and Design We present an approach that achieves 10nm-scale nanoaperture arrays at 5:1 aspect ratio with template-guided metal dewetting, bypassing the need for liftoff, etching, or post-processing. The experimental results are closely corroborated by a numerical model, enabling a comprehensive study of the parameter space and physical mechanisms. 1200 Thu-A9-c3 Magnetic assembly of microspheres into ordered two- dimensional arrays Kanna Aoki, Minoru Fujii Kobe University, Nada, Kobe, Hyogo, Japan Magnetic assembly technique, which utilizes building block’s magnetic properties to organize them into systematic arrangements is introduced. Combination of conventional photolithography and two-dimensional magnetic assembly of microspheres achieved structures whose fineness is close to the level of electron-lithography. 1215 Thu-A9-c4 Approach for novel 3-dimensional imaging by built-in lens mask lithography Toshiki Tanaka, Hisao Kikuta, Hiroaki Kawata, Masaaki Yasuda, Masaru Sasago and Yoshihiko Hirai Osaka Prefecture University, Japan 3-dimensional imaging by built-in lens mask lithography is studied. The complex transmission of the mask is obtained by

superposition of complex amplitudes of the seed patterns in voluntary focal depths. The 3-D imaging by single mask is confirmed by computational lithographic work.

1230 Lunch Break until Lunch served in the Exhibition Area 1330

MEE Young Investigator Award Lecture - Late and Hot News Session Lecture Hall: World Forum Theatre Session Chair: Evangelos Gogolides (Demokritos, GR) 0930 Thu-MEE-YIA Biomaterial Microsystems for Drug Delivery and Bioelectrochemistry S.S. Keller, L. Amato, R.Singh Petersen, C. Caviglia, S.Hemanth, A.Heiskanen, A. Boisen, J. Emnéus Technical University of Denmark, Lyngby, Denmark 1000 LHN-1 to be announced 1010 LHN-2 to be announced 1020 LHN-3 to be announced

1030 Break and Exhibition

Cluster B - Micro and Nano Fabrication B1 - Pattern Transfer Lecture Hall: World Forum Theatre Session Chair: Raphael Taboryski (DTU, DK) 1100 Thu-B1-c1 SnOx high-efficiency EUV interference lithography gratings towards the ultimate resolution in photolithography Elizabeth Buitrago, Roberto Fallica, Tero Kulmalaa, Daniel Fana, Yasin Ekinci Paul Scherrer Institute, Villigen, Switzerland EUV interference lithography (IL) has been demonstrated to be a powerful platform for photoresist research. In this work we investigate a molecular metalorganic Sn-based resist featuring high absorbance at EUV for the fabrication of highly efficient diffraction gratings necessary for single- digit resolution patterning. 1115 Thu-B1-c2 High aspect ratio nanopatterning for x-ray diffractive optics Richard C. Tiberio a, Michael J. Rooks b, Chieh Chang c, Sharon Oh c, Selven Virasawmy c , Jeongwon Park c, Anne Sakdinawat c a Stanford University, Stanford, CA USA; b Yale University, New Haven, CT USA; c SLAC National Accelerator Laboratory,Menlo Park, CA USA Very high aspect ratio etching into silicon using vertical directionality- controlled metal-assisted chemical etching is demonstrated for x-ray diffractive optics fabrication. Structures with feature sizes ranging from 25nm lines/ 25nm space at 50:1 aspect ratio to 150nm lines 50nm spaces at 100:1 aspect ratio are shown. 1130 Thu-B1-c3 Effects of thermal nanoimprint lithography on the mechanical properties of PMMA: a comparison between standard NIL and ultrafast NIL Michele Pianigiani a,b,c, Robert Kirchner d, Enrico Sovernigoa,b, Massimo Tormen a,b, Helmut Schift d a ThunderNIL srl, Padova, Italy; b IOM-CNR Area Science Park, Basovizza, Trieste, Italy; c Università degli Studi di Trieste, Trieste, Italy; d Paul Scherrer Institut, Villigen, Switzerland T-NIL is a replication process to pattern micro/nanostructures in a range of materials. In MNE2014, ultrafast pulse-NIL (p- NIL) was presented. In this work we examine the effect of T and p-NIL on the mechanical properties of the surface of PMMA, using PeakForceQNMTM mode on AFM. 1145 Thu-B1-c4 Patterning of diamond like carbon films using silicon containing thermoplastic resist (SiPol) as hard mask D. Virganavicius a,b, V.J. Cadarso a, S. Tamulevicius b, H. Schift a a Paul Scherrer Institut, Villigen, Switzerland b Kaunas University of Technology, Kaunas, Lithuania Patterning of materials such as diamond-like carbon (DLC) and DLC nanocomposites is of interest for an increasing number of applications. However, novel methods are required to achieve this. We presented a nanoimprint process based on the use of SiPol resist combined with plasma etching to straightforwardly nanopattern such materials. 1200 Thu-B1-c5 Polymer injection molding of hard X-ray refractive optics F. Stöhr, J.M. Lindhard, H. Simons, A.C. Jakobsen, J. Hübner, F. Jensen, O. Hansen and H.F. Poulsen Technical University of Denmark, Lyngby, Denmark Polymer injection molding as a new route for the manufacture of high-efficient hard X-ray lenses at low cost is proposed. We discuss the manufacture of the nickel mold

inserts by UV-lithography, deep reactive ion etching of silicon and electroplating. Prototype lenses were successfully tested at the ESRF. 1215 Thu-B1-c6 Pattern Fidelity in 3-D Structures during Pattern Transfer from Atomically Precise Templates Joshua B. Ballard a, Scott W. Schmucker a, James H. G. Owen a, John N. Randall a a Zyvex Labs, Richardson, TX USA

The pattern fidelity of <10 nm structures fabricated by hydrogen depassivation lithography, area-selective atomic layer deposition, and reactive ion etching is analyzed. An empirical model describes the effects of the pattern transfer steps on the final pattern shape, starting with an initially atomically precise exposure step.

1230 Lunch Break until Lunch served in the Exhibition Area 1330

Cluster C - Micro and Nano Systems and Devices C1.3 -MEMS/NEMS for Energy Harvesting Lecture Hall: Yangtze Session Chair: Phil Prewett (OSC, UK) time 0930 Thu-C1-c1 Design and fabrication of trapezoidal organic micro-beams for mechanical energy harvesting from environmental sources H. Nesser , H. Debéda, I. Dufour, C. Ayéla Université de Bordeaux, Talence, France Trapezoidal organic micro-beams are designed and fabricated to have a low resonance frequency and a high strain under vibration, for mechanical energy harvesting application. With the optimized design, the trapezoidal micro-beams provide a theoretical harvested electrical power 2.2 higher than traditional rectangular shaped micro-beams. 0945 Thu-C1-c2 AlN layers for bistable energy harvesting microdevices R. A. Dias a, H. Fonseca a, M. Costa a, L. A. Rocha b and J. Gaspar a a INL, Braga, Portugal; b University of Minho, Guimaraes, Portugal This work focuses on a novel concept for piezoelectric energy harvesting using AlN-based buckled microdevices and presents the results of a comprehensive characterization (film structure, mechanical, electrical and piezoelectric properties) of sputtered AlN layers, the selected material for

this application. 1000 Thu-C1-c3 Triboelectric nanogenerator with honeycomb-like nanofiber microstructures Shin Jang, Hyounjin Kim, Yeongjun Kim, Je Hoon Oh, Hanyang University, Ansan, Gyeonggi-do, Republic of Korea Triboelectric nanogenerator was fabricated with electrospun PVDF-TrFE nanofibers. The microstructures of nanofibers are dependent on the concentration of PVDF-TrFE solution. The nanogenerator with honeycomb-like nanofiber structures can produce a high power density enough to illuminate 100 LEDs due to the increased surface roughness and deformable contact area. 1015 Thu-C1-c4 AlN-based flexible piezoelectric skin for energy harvesting from human motion Francesco Guido a, MariaTeresa Todaro a, b, Antonio Qualtieri a, Luciana Algieri a,c, Massimo De Vittorio a,c a Istituto Italiano di Tecnologia, Arnesano (LE); b Istituto di Nanotecnologia, Lecce; c Università del Salento, Lecce, Italy A biocompatible, flexible and wearable prototype of energy harvester is presented. Device is based on Aluminum Nitride piezoelectric thin film on a polymeric substrate. Prototypes show a flexible structure designed and fabricated to realize an artificial piezoelectric skin able to scavenge electrical energy from human motion at very low frequencies

C1.4 -MEMS/NEMS graphene devices Lecture Hall: Yangtze Session Chair: Michel Despont (CSEM, CH) 1100 Thu-C1-c5 Graphene membrane fabrication methods for NEMS applications with sealed cavities S.Wagner, C. Weisenstein, S. Kataria, M.C. Lemme University of Siegen, Germany Several methods to transfer chemical vapor deposited graphene onto microcavities are investigated and analyzed with respect to yield and quality of free-standing membranes. The optimized method is used to fabricate graphene NEMS pressure sensors. Electrical measurements demonstrate pressure sensing as an application for graphene membranes.

1115 Thu-C1-c6 Modification of boron-nitride-encapsulated graphene using a focused He+ beam Gaurav Nanda, Srijit Goswami, Paul Alkemade Delft University of Technology, The Netherlands We studied the effects of He+ beam bombardment of graphene encapsulated in hexagonal boron nitride. We found that self-healing of beam-induced defects and n-doping by nitrogen–carbon exchange occur. These phenomena are, we conclude, essential for the realization of p-n junction graphene devices. 1130 Thu-C1-c7 P3HT:PCBM and graphene inks for organic solar cells J. Kastner a, A. Fuchsbauer a, F. Tomarchio b, N. Decorde b, M. Wagner c, I. Gnatiuk d, D. Holzinger d, B. Unterauer a, K. Bretterbauer a, and A.C. Ferrari b a Profactor GmbH, Steyr-Gleink, Austria; b University of Cambridge, UK; cBelectric OPV GmbH, Nürnberg, Germany dTiger Coatings GmbH & Co KG, Wels, Austria Inkjet printing is promising technique the production of organic solar cells. We present different ink formulations with halogen-free solvents for printing the active layer (P3HT:PCBM). OPV modules on PET foil with active areas of 134 cm2 were fabricated. To improve stability, we replace PEDOT:PSS by graphene ink. 1145 Thu-C1-c8 Piezoresistive transduction of graphene-based nanoelectromechanical systems Madhav Kumar and Harish Bhaskaran University of Oxford, United Kingdom We have demonstrated that the intrinsic piezoresistivity of graphene is an effective technique to transduce the motion of monolayer graphene nanomechanical resonators. We find that such graphene resonators show very high Q-factors as high as 1000-2000 and 10 zeptogram mass resolution at room temperatures. 1200 Thu-C1-inv Transfer-Free Fabrication of Large-Area Nanocrystalline Graphene Nanoelectromechanical Switch Array Jian Sun a, Marek E. Schmidt a, Harold M. H. Chong b, Manoharan Muruganathan a, Hiroshi Mizuta a,b a Japan Advanced Institute of Science and Technology, Nomi, Japan; b University of Southampton, United Kingdom We deposited nanocrystalline graphene (E~0.74 TPa) on an insulator via catalyst-free PECVD. Large-area NEM switches were fabricated using thin film process techniques, with no transfer required, exhibiting high performances, i.e. pull-in

voltage of 8.5 V, reversible operations, and on/off ratio of ~1e5.

1230 Lunch Break until Lunch served in the Exhibition Area 1330

Cluster D Micro and Nano Technology for Bio/Life Sciences D1.1 - Mechanical Sensing Elements Lecture Hall: Mississippi Session Chair: Murali Ghatkesar (TU Delft, NL) time 0930 Thu-D1-c1 In-line picogram-resolution microchannel resonator for protein adsorption measurement operating at atmospheric pressure J. Groenesteijn a, R.J.A. Steenwelle a, J.C. Lötters a, b, R.J. Wiegerink a a MESA+, University of Twente, Enschede, The Netherlands b Bronkhorst High-Tech BV, Ruurlo, The Netherlands This paper reports on an in-line microchannel resonator for protein adsorption measurement with a resolution of 19 pg. The sensor eliminates the need for complex measurement sequences, vacuum environment or delicate external (optical) components. 0945 Thu-D1-c2 Fabrication of holder-type piezoresistive cantilever for embryo mass measurement Hayato Sone a, Tomoyuki Kawakami a, Akiko Saito b, Sumio Hosaka a and Toshiya Sakata b a Gunma University, Kiryu, Gunma, Japan b The University of Tokyo, Bunkyo-ku, Tokyo, Japan In this study, we fabricated holder-type piezoresistive cantilever using focused ion beam (FIB) to place and fix a single mouse embryo on the cantilever, and we demonstrated the first measurement of a single mouse embryo mass. 1000 Thu-D1-c3 The Helium Ion Microscope as an ideal complement of FIB technologies for one nanometre-scale graphene nanopore fabrication J. Gierak 1, E. Bourhis 1, T. Lottin 1, A. Madouri 1 Loïc Auvray 2, F. Montel 2, A. Morin 3, J. Mathé 3 E. Majorovits 4, A. Heidt 4 and P. Gnauck 4 1 LPN-CNRS, Marcoussis; 2 Paris Diderot University; 3 Université d'Evry, Evry, France; 4 Carl Zeiss Microscopy

GmbH, Oberkochen, Germany In this paper we will present and detail our methodology aiming at fabricating sub-1nm nanopores by complementing high and low masses Focused Ion Beams (FIB) patterning techniques. The goal of our study aims at drilling stable, robust and low dimensional aperture drilled into graphene sheets suspended over micro-pores. 1015 Thu-D1-c4 Iron Oxide Nanoparticle Assembly on DNA Origami Daniel Schiffels a,b, Fernando Vargas-Lara a, Jack F. Douglas a, J. Alexander Liddle a a NIST, Gaithersburg, USA b University of Maryland, College Park, USA DNA origami is used to assemble biocompatible superparamagnetic iron oxide nanoparticles into precise “dumbbells” for use as MRI contrast agents and hyperthermia therapeutics. Efficient, scalable purification by centrifugation is made possible by incorporating an enzymatically cleavable DNA tag into the structure.

1030 Break and Exhibition

D1.2 - Sensing Systems Lecture Hall: Mississippi Session Chair: Zoran Djuric (SASA, SRB) 1100 Thu-D1-inv Three-dimensional (3D) Scaffolds for Bioartificial Organ-on-a-Chip Systems and Bioelectroanalysis S. Mohanty a, A. Heiskanen a, L. Amato a, S. Keller a, C. Canali a, M. Hemmingsen a, L. B. Larsen a, M. Alm b, P. Thomsen b, Ø. G. Martinsen c, A. Aspegren d, A. Martinez-Serrano e, M. Dufva a, A. Wolff a, J. Emnéus a a Technical University of Denmark, Lyngby, Denmark; b Biomodics ApS, Høje Tåstrup, Denmark; c Oslo University, Oslo, Norway; d Cellartis® by Takara Bio Europe AB, Göteborg, Sweden; e Universidad Autónoma de Madrid, Madrid, Spain In this work, polymer scaffolds are fabricated using either photo- and colloidal lithographic nano/micro patterning or by a combination of 3D printing and polymer casting techniques, in some cases followed by pyrolysis to generated conductive carbon scaffolds. The scaffolds are optionally designed with: (a) Primary structured perfusable channel network that allows flow through the material enabling delivery of necessary nutrients and oxygen to the interior of the scaffolds. (b) Secondary more arbitrary random porous network that optionally can enclose a hydrogel phase with a

“nearby” source of important cell factors, supporting the growth and differentiation of cells. (c) Ability to conduct or sense electrical currents. The application of these scaffolds will be presented. 1130 Thu-D1-c5 Highly Sensitive Raman analysis and electrical recording of living cells using vertical plasmonic nanoantennas Michele Dipalo, Gabriele C. Messina, Rosanna La Rocca, Victoria Shalabaeva, Francesco De Angelis Istituto Italiano di Tecnologia, Genova, Italy Vertical plasmonic nanoantennas are integrated on biocompatible substrates and electronic biosensors in order to achieve highly sensitive Raman analysis and electrical recording of living cells. The nanoantennas provide predictable cell adhesion sites where the plasmonic enhancement value is known, leading to the possibility of performing quantitative analysis of living cells. 1145 Thu-D1-c6 Fast prototyping of plastic microfluidic devices with Vis/IR transparent view-port for live cell imaging Giovanni Birardaa, Andrea Ravasiob, Mona Suryana b, Sivakumar M. Maniamb, Hoi-Ying Holman a, Gianluca Grenci b a Lawrence Berkeley National Laboratory, Berkeley, USA b National University of Singapore, Singapore We present an easy approach for the production of plastic devices with transparent view-ports suitable for Infrared Spectro microscopy on living biological sample. The devices were tested by collecting IR maps of living human fibroblast cells 1200 Thu-D1-c7 A disposable miniaturized blood extraction device with flexible parylene microneedles W.-H. Hung, F.-W. Lee, Y.-J. Yang National Taiwan University, Taipei, Taiwan This work presents a disposable blood extraction device which consists of a high-aspect-ratio parylene microneedles array and a chamber structure. We demonstrated that the device assembled with a syringe pump was capable of extracting red ink. The corresponding penetrated force of different numbers of microneedles was also measured. 1215 Thu-D1-c8 Automated characterization of Biopolymer Degradation with a Blu-Ray Readout Platform Andrea Casci Ceccacci a, Lidia Morelli a, Filippo Giacomo Boscoa, Robert Burger a, Ching-Hsiu Chen a, En-Te Hwu b, Anja Boisen a a Technical University of Denmark, Lyngby, Lyngby,Denmark

b Institute of Physics, Academia Sinica, Taipei, Taiwan In this work we present a novel, rapid and low-cost tool to precisely characterize the biopolymer degradation of micrometer-sized thin films through the measurement of the resonance frequency of spray-coated micromechanical resonators. The system allows the characterization of arrays of micromechanical resonator in a fully automated way

1230 Lunch Break until Lunch served in the Exhibition Area 1330

Thursday Afternoon 24 September 2015

Cluster A - Micro and Nano Patterning A4.2 - Soft Lithography 2 Lecture Hall: Amazon Session Chair: Regina Luttge (TU-Eindhoven, NL) time 1330 Thu-A4-inv Photonic Crystals for visible light fabricated by reverse nanoimprinting of a high refractive index material C. Pina-Hernandez 1, Q. Fillot 2, S. Dhuey 2, A. Koshelev 1, G. Calafiore 1, M. Sainato 2, K. Munechica 1, S. Cabrini 2 1aBeam Technologies, Hayward, CA, USA 2 Lawrence Berkeley National Laboratory, Berkeley, CA USA We present the fabrication and characterization of active photonic crystals printed directly on functional high refractive index (n=2.1) materials with embedded thermally stable quantum dots. The new matrix was successfully patterned by direct nanoimprint technologies with high resolution and fidelity to fabricate photonic crystals with excellent optical properties. 1400 Thu-A4-c5 Smart elastomer substrates for flexible systems Rian Seghir and Steve Arscott University of Lille, Villeneuve d'Ascq, France The fabrication of flexible electronics and systems will require the development of smart functional substrates, e.g. to protect devices from strain. We demonstrate here that by mixing polydimethylsiloxane (PDMS) and SU-8 photoresist, we obtain both a locally photo-hardenable and patternable stretchable functional material compatible with standard photolithography. 1415 Thu-A4-c6 Multiplexed microfluidic stamp inking for automated micro- contact printing process Aurore Estève a, Julie Foncy a, Jean-Christophe Cau b, Erwan Crestel b, Emmanuelle Trévisiola,d,e,f, Christophe Vieua, Laurent Malaquina a CNRS LAAS, Toulouse, France; b INNOPSYS, Carbonne, France; c Univ de Toulouse, INSA, LAAS, Toulouse, France; d Université de Toulouse, Toulouse, France; e INRA, Toulouse, France; f CNRS, UMR Toulouse, France Micro-contact printing is a versatile patterning technique, scarcely implemented at an industrial level due to difficulties in the automation of some steps of the stamp preparation process. We propose a new microfluidic approach for stamp inking that enables integration in an automated commercial

system and makes multiplexed patterning possible.

Cluster B - Micro and Nano Fabrication B2 - Plasma Etching Lecture Hall: Yangtze Session Chair: Sandra Wolff (TU Kaiserslautern, DE) time 1330 Thu-B2-c1 Fabrication of shape memory / silicon bimorph nanoactuators Franziska Lambrecht a, Christian Lay a, Iván Aseguinolaza b, Volodymyr Chernenko b,c, Manfred Kohl a a Karlsruhe Institute of Technology, Karlsruhe, Germany b University of the Basque Country, Bilbao, Spain c Ikerbasque, Bilbao, Spain This paper investigates two process flows for fabrication of shape memory bimorph nanoactuators with critical dimensions of 50nm and presents in-situ measurements of their thermo-electro-mechanical properties in a SEM. The focus is on NiMnGa that exhibits outstanding actuation properties combined with a Si layer for elastic resetting. 1345 Thu-B2-c2 Supercritical CO2 etching of metal thin films for magnetoresistive memory processing Md Rasadujjaman a, Yoshiki Nakamura a, Mitsuhiro Watanabe a, Eiichi Kondoh a, Mikhail R. Baklanov b a University of Yamanashi, Kofu, Japan b IMEC, Leuven, Heverlee, Belgium We report, etching of metal (Cu, Ni, Co, and Fe) from glass substrate in supercritical CO2, using Hhfac etching agents, which is effective and efficient. Fe film is easier to etch than others. This process is potentially applicable to the etching of metal thin film in magnetic tunneling junction stacks. 1400 Thu-B2-c3 Plasma Directed Assembly: A non-lithographic nanoassembly technology for polymeric nanodot and silicon nanopillar fabrication Athanasios Smyrnakis, Angelos Zeniou, Vassilios Constantoudis, Evangelos Gogolides NCSR Demokritos, Aghia Paraskevi, Greece Plasma etching is presented as a directed assembly method to both create the nanodot pattern on a polymeric film, and then transfer it to a silicon substrate for the fabrication of silicon nanopillars. Dimensional control is achieved by plasma parameters. Room-T fluorocarbon and cryogenic silicon nanoetching processes are demonstrated.

1415 Thu-B2-c4 Low-damage cryogenic etch of porous organosilicate low-k dielectric L. Zhang a,b, A. Goodyear c, M. Cooke c, J.-F. de Marneffe a, S. de Gendt a,b, M. R. Baklanov a a IMEC, Leuven, Belgium; b KULeuven, Leuven, Belgium; c Oxford Instruments Plasma Technologies, Bristol, UK A new approach for low temperature damage free plasma etching of porous low-k films based on the gas condensation of precursor reactants prior to plasma ignition. Damage free plasma process is demonstrated on both blanket and patterned structure.

Cluster C - Micro and Nano Systems and Devices C2 - Micro and Nano Fluidic Systems Lecture Hall: World Forum Theatre Session Chair: Marko Blom (Micronit, NL) time 1330 Thu-C2-c1 Effect of Different Fluids on Rectified Motion of Leidenfrost Droplets on Micro/Sub-Micron Ratchets Jeong Tae Ok a, Sunggook Park b a Midwestern State University, Wichita Falls, TX USA. b Louisiana State University, Baton Rouge, LA USA A systematic study was performed on the Leidenfrost droplet motion of various liquids including acetone, isopropanol, deionized water and R134a on ratchets with different periods ranging from 1.5 millimeter down to 800 nm. 1345 Thu-C2-c2 Lateral porous silicon membranes fabricated within 2D microchannels through local ion implantation Yingning He, David Bourrier, Thierry Leïchlé LAAS-CNRS, Univ. Toulouse, Toulouse, France We present a novel process for the fabrication of lateral porous silicon membranes with tunable pore size and porosity for microfluidic applications. Since the formation of porous silicon by anodization is highly dependent on the dopant concentration, we use ion implantation to control the membrane location and physical properties. 1400 Thu-C2-c3 Luminescent and absorptive metal-coated droplets for micro-velocimetry Olivier Mesdjian a,b,c, Yong Chen a,b,c, Jacques Fattaccioli a,b,c a Ecole Normale Supérieure, Paris, France; b Sorbonne Universités, Paris, France; c CNRS, UMR, Paris, France We developed luminescent and absorptive metal-coated droplets as tracers for micro-veocimetry (µPTV). Here we

characterised the flow in a rectangular micro channel by measuring both the Poiseuille profile and the hydrodynamic resistance. 1415 Thu-C2-c4 A novel piezo actuated high stroke polymer membrane for micropumps Ardavan Shabanian, Frank Goldschmidtboeing, Sergio Vilches, Peter Woias IMTEK, University of Freiburg, Freiburg, Germany Piezo membrane actuators are the most common used in the micropumps. They are able to exert high forces but not very large deflection. Hence we developed a new actuation method for micropumps which can increase the deflection around 10 times more than previous methods with less power consumption.

Cluster D Micro and Nano Technology for Bio/Life Sciences

D1.3 - Optical Sensing Elements Lecture Hall: Mississippi Session Chair: Massimo De Vittorio (Univ. Salento, IT) time 1330 Thu-D1-c9 Microring resonator based evanescent field sensor with homogeneously integrated P-I-N detector Alina Samusenko a,b, Mher Ghulinyan a, Davide Gandolfi b, Romain Guider b, Tatevik Chalyan b, Lorenzo Pavesi b, Georg Pucker a a Bruno Kessler Foundation, Trento, Italy; b University of Trento, Italy Homogeneous integration of P-I-N detectors in polycrystalline silicon on SiON based sensor chip are demonstrated. The sensor is part of a system for aflatoxin detection in milk. The PIN-detector show a responsivity of 0.3 A/W at 850 nm and reproduces the WGM-spectra accurately. 1345 Thu-D1-c10 Monitoring of the extracellular changes in the cell medium by SERS analysis Victoria Shalabaeva, Rosanna La Rocca, Michele Dipalo, Gabriele C. Messina, Ermanno Miele, and Francesco De Angelis Istituto Italiano di Tecnologia, Genova, Italy Here we propose a straightforward approach based on SERS analysis for real-time, quantitative monitoring of metabolic processes happening in extracellular medium without affecting cells. The proposed method is label-free, cheap,

and easy to use, thus compatible with the majority of the protocols currently used for in vitro investigations. 1400 Thu-D1-c11 Fabrication and application of ultrathin gold nanohole films as complementary dual sensing platform Raphael F. Tiefenauer, Bernd Dielacher, Juliane Junesch, Klas Tybrandt, János Vörös ETH Zurich, Switzerland Simultaneous LSPR and electrical detection using ultrathin gold films with nanoholes is presented. The sensor is electrochemically accessible and enables label-free sensing in a controlled fashion. Iodide sensing was established by iodide induced electrochemical etching. Further, binding studies of DNA were performed to show the versatility of the platform. 1415 Thu-D1-c12 Label-free biosensing of ErbB2 protein marker detection by an organic distributed feedback laser based on perylenediimide derivative Aritz Retolaza a,b, Josu Martinez-Perdiguero a,b, Santos Merino a,b, Marta Morales-Vidal c, Pedro. G. Boj c, José A. Quintana c, José M. Villalvilla c, María A. Díaz-García c a IK4-Tekniker, Eibar, Spain; b CIC microGUNE, Arrasate- Mondragón, Spain; c Universidad de Alicante, Alicante, Spain A vertically emitting organic second-order one dimensional distributed feedback laser composed of polystyrene and perylene orange and fabricated by thermal-NIL was employed for label-free biomolecular detection of ErbB2 protein. A limit of detection of 22 ng/ml, with no cross- reactivity with BSA and TNFalfa was observed.

Plenary Session 5 Lecture Hall: World Forum Theatre Session Chair: Ageeth Bol (TU Eindhoven,NL)

1445 Thu-Keynote-5 Promises, Problems, and Practicalities of Nanomaterial Electronics Aaron D. Franklin Duke University, Department of Electrical & Computer Engineering and Department of Chemistry, USA Will we ever see the end of silicon computing? Will nanomaterials be the ones to save the day? Will the only future for nanomaterial electronics be one that is orthogonal to silicon? While definite answers to these questions are out of reach, this talk will provide helpful information for considering them, including a summary of the major

promises, problems, and practicalities offered by nanomaterial-driven electronics. 1545 Closing Remarks and Farewell Kees Hagen TU Delft, NL

List of Authors Name ...... Paper Abada, Sami ...... Wed-A-p71 Abbas, Haider ...... Tue-C-p76; Wed-C-p75 Abbas, Yawar ...... Wed-C-p75; Tue-C-p76 Abe, Koji ...... Tue-C1-c8 Abu Quba, Abd Alaziz ...... Tue-B-p42 Abuelgasim, Ahmed ...... Tue-C-p36 Accardo, Angelo ...... Wed-B8-c2; Wed-D4-c2; Tue-D-p16 Adib, Mustahsin ...... Tue-C-p104 Ahmad, Ahmad ...... Wed-A7-c4 Ahn, Junhyoung...... Wed-A-p45; Wed-A-p25 Akita, Seiji ...... Wed-C5-c6 Al-Azawi, Anas ...... Wed-D2-c1 Al-Marashdeh, A.A.M...... Tue-S2-c6 Al-Naimi, Aous ...... Wed-B-p5 Alaca, Burhanettin Erdem ...... Tue-B-p48 Alaferdov, Andrei ...... Tue-A-p12 Alamarguy, David ...... Wed-B-p31 Albrecht, Manfred ...... Wed-B-p11 Albrecht, Tim ...... Wed-C5-c7 Alcubilla Gonzalez, Ramon ...... Tue-C-p34 Algieri, Luciana ...... Thu-C1-c4 Alias, Nurul Ezaila ...... Wed-C5-c8 Alippi, Paola ...... Wed-C-p45 Alkaisi, Maan ...... Tue-D-p54 Alkemade, Paul ...... Wed-B7-c1; Wed-A-p3; Thu-C1-c6; ...... Tue-B-p38 Alkhalil, Feras ...... Tue-C1-c11 Allsopp, Duncan ...... Wed-B-p15 allwood, Dan ...... Tue-C-p72 Alveringh, Dennis ...... Wed-C-p25 Amano, Hiroshi ...... Wed-A-p15 Amato, Letizia ...... Wed-D-p15; Tue-C-p56; Wed-A-p65; ...... Thu-MEE-YIA An, Jae Seok ...... Tue-C-p54 Andryieuski, Andrei ...... Wed-C-p59 Angelakos, Evangelos ...... Tue-A5-c4 Angell, Daniel ...... Wed-C-p53 Angelopoulou, M...... Wed-D2-c3 Angelow, Tihomir ...... Wed-A7-c4 Anhøj, Thomas Aarøe ...... Wed-A-p13 Anthony, Carl ...... Tue-B4-c2 Anthony, Ricky ...... Tue-A-p72 Aoki, Kanna ...... Thu-A9-c3 Araki, Akiyoshi ...... Wed-C-p9 Araneo, Rodolfo ...... Tue-C-p10; Wed-A-p11 Arasheed, Salma ...... Wed-D-p53 Arat, Kerim Tugrul ...... Wed-B7-c3 Argitis, Panagiotis ...... Wed-A-p55; Tue-A5-c4 Arscott, Steve ...... Thu-A4-c5 Asbahi, Mohamed ...... Thu-A9-c2 Aseguinolaza, Iván ...... Thu-B2-c1 Ashburn, Peter ...... Tue-D5-c2 Aumüller, Ingo ...... Wed-D2-c1 Außerhuber, Helene ...... Wed-A-p43 Auvray, Loïc ...... Thu-D1-c7 Averkin, Sergey ...... Wed-A-p69 Avram, Andrei ...... Tue-C-p32 Aydogan, Cemal ...... Wed-A7-c4 Ayéla, Cédric ...... Thu-C1-c1 Babocký, Jiří ...... Tue-A-p8 bacco, davide ...... Wed-C-p51 Bagnall, Darren...... Wed-A-p49; Tue-A3-c5 Baklanov, Mikhail ...... Thu-B2-c2; Thu-B2-c4 Baldassarre, Leonetta...... Tue-B3-c3 Ballard, Joshua ...... Thu-B1-c6 Ban, Wonjin...... Tue-C-p94 Bandara, Chaturanga...... Tue-D-p50 Banerjee, Sayanti ...... Wed-C5-c3 Banghard, Michael ...... Wed-D-p43 Baracu, Angela ...... Wed-B-p7 Barbato, Marco ...... Tue-C-p82 Barbillon, Grégory ...... Wed-D-p47 Barbot, Antoine ...... Tue-D5-c3 Bardinal, Véronique ...... Wed-A-p71 Barnett, Julian ...... Tue-A-p20; Tue-A5-c2 Barth, Sven ...... Tue-C1-c1; Wed-C-p1 Barth, Ulrich ...... Tue-A-p4 Bartlett, Philip ...... Wed-C-p71 Bartolf, Holger ...... Wed-C5-c9 Becker, Marco ...... Wed-C-p13; Tue-A-p26 Bekaert, Joost...... Tue-A-p60 Beleggia, Marco ...... Tue-A-p14 Belic, D...... Tue-S2-c2 Belle, Stefan ...... Wed-A-p23 Belluti, Pierluigi ...... Tue-D5-c4 Benetto, Simone ...... Tue-D-p14; Tue-C1-c2 Benjamin, Sophie ...... Wed-B8-c1; Wed-C-p71 Benkel, Christian ...... Tue-A-p24 Beránek, Pavel ...... Tue-C-p28 Berenschot, Erwin ...... Wed-D3-c2 Bergers, Lambert ...... Wed-D3-c1 Bergmair, Iris ...... Tue-A-p42 Bermejo Broto, Sandra ...... Tue-C-p34 Berris, Theocharis...... Wed-D-p25 Bertagnolli, Emmerich ...... Tue-D-p26; Tue-B3-c2; Tue-B-p24; ...... Tue-S2-c2; Wed-B-p25 Berton, Kevin ...... Wed-D-p31; Tue-D6-c4 Besacier, Maxime ...... Wed-B-p45 Bhaskaran, Harish ...... Thu-C1-c8; Tue-A-p58 Bi-Hsuan, Lin ...... Wed-D-p51 Biagioni, Paolo...... Tue-C-p102 Bianco, Stefano ...... Wed-C-p87 Bifulco, Paolo ...... Tue-D-p4 Bilenberg, Brian ...... Tue-A-p24 Bilston, Lynne ...... Tue-B4-c2 Birarda, Giovanni ...... Thu-D1-c4 Bita, Bogdan ...... Tue-C-p32 Blom, Marko ...... Wed-D2-c2 Boden, Stuart ...... Tue-C1-c10; Tue-A3-c5; Wed-A-p49 Boije af Gennäs, Gustav ...... Wed-D2-c1 Boisen, Anja ...... Tue-B-p16; Wed-C-p39; Wed-D-p15; ...... Tue-B-p14; Thu-D1-c3; Thu-MEE-YIA Boj, Pedro G...... Thu-D1-c12 Bok, Jan ...... Tue-A-p8 Bol, Ageeth ...... Tue-B-p4 Bolivar, Juan M...... Wed-D2-c2

Bollani, Monica ...... Tue-B3-c3; Tue-C-p102 Bolten, Jens ...... Tue-A3-c1; Wed-B7-c3 Bonabi, Ashkan ...... Tue-D-p20 Bonaldi, Michele ...... Wed-C-p17 Bonanni, Simon ...... Wed-A7-c3 Bondino, Federica ...... Tue-A-p76 Boodhoo, Liam ...... Tue-C1-c11 Borges, Jean-Philippe ...... Wed-D-p27 Borisov, Michael ...... Tue-A-p66 Borrise, Xavier ...... Tue-C1-c8; Wed-C5-c4 Borzenko, Tatiana ...... Tue-A-p56; Wed-C5-c12 Bos, Sandra ...... Wed-B-p45 Boscardin, Maurizio ...... Tue-D5-c4 Bosco, Filippo Giacomo ...... Thu-D1-c3 Bosgra, Jeroen ...... Tue-B4-c4 Bossy , Emmanuel ...... Tue-D-p40 Botsialas, A ...... Wed-D2-c3 Bottegoni, Federico ...... Tue-C-p102 Bourhis, Eric ...... Tue-D-p46; Thu-D1-c7 Bourrier, David ...... Thu-C2-c2 Bouwens, Maryse ...... Tue-B-p38 Braun, Thomas ...... Tue-d6-c3 Brehm, Johannes ...... Wed-C5-c12 Bretterbauer, Klaus ...... Thu-C1-c7 Brueckl, Hubert ...... Wed-C3-c1 Brugger, Juergen ...... Tue-A-p62; Tue-B4-c5; Wed-A7-c1 Bruk, Mark ...... Wed-A-p69 Brumfield, Lance ...... Tue-C-p26 brusatin, giovanna...... Tue-D-p36 Bruschi, Paolo ...... Tue-C1-c3 Bryche, Jean-Francois ...... Wed-D-p47 Buch, Xavier ...... Wed-D-p21 Bucher, Volker ...... Wed-D-p43 Budden, Matthias ...... Wed-A7-c4 Buhmann, Hartmut ...... Tue-A-p56 Buitrago, Elizabeth ...... Thu-B1-c1; Tue-A5-c3 Burger, Robert...... Thu-D1-c3; Wed-D-p15 Burghammer, Manfred ...... Wed-B8-c2; Wed-D4-c2 Bussolino, Federico ...... Tue-D-p14 Byun, Ikjoon ...... Wed-B-p1 Cabello Fusarés, Maria ...... Wed-D-p17 Cabrini, Stefano ...... Tue-B3-c3; Thu-A4-inv Cadarso, Victor J...... Wed-C-p83; Tue-C-p84; Thu-B1-c4; ...... Tue-B4-c5 Calestani, Davide ...... Tue-C1-c2 Camps, Thierry ...... Wed-A-p71 Candeloro, Patrizio ...... Wed-C-p95; Wed-D-p53; Tue-D-p52 Cané, Carles ...... Tue-C1-c1; Wed-C-p1 Canepa, Silvia ...... Tue-C-p56 Canva, Michael ...... Wed-D-p47 Carbonetto, Sebastian ...... Wed-B-p9 Casals, Olga ...... Tue-C1-c1; Wed-C-p1 casci ceccacci, Andrea ...... Thu-D1-c3 Castillo-Fernandez, Óscar ...... Wed-D-p17 Catalan, Gustavo ...... Wed-B7-c4 Cau, Jean-Christophe ...... Thu-A4-c6 Caviglia, Claudia ...... Wed-A-p65; Thu-MEE-YIA Cefarin, Nicola ...... Tue-D-p6 Celebrano, Michele ...... Tue-C-p102; Tue-B3-c3

Cerea, Andrea ...... Wed-C-p51 Cesarelli, Mario ...... Tue-D-p4 Cha, Kyoung Je ...... Wed-D-p41 Chalyan , Tatevik ...... Thu-D1-c9 Chan, Boon Teik ...... Tue-A-p60 Chan, Boon Tiek ...... Tue-B-p20 Chan, Hui-Ju ...... Wed-A-p67 Chang, Tso-Fu Mark ...... Wed-C-p19 Chang, Chiaming ...... Tue-C-p24 Chang, Chieh ...... Thu-B1-c2 Chang, Chieh-Fu ...... Tue-D-p44; Tue-B-p6; Wed-B-p3 Chang, Tien-Li ...... Wed-B-p3; Tue-D-p44; Tue-B-p6; ...... Tue-C-p78; Tue-D-p32 Chang, Tso-Fu Mark ...... Wed-C-p21; Tue-C-p80; Wed-B-p43; ...... Wed-C-p9; Wed-C-p81; Wed-C-p5 Charlot, Samuel ...... Wed-A-p71 Chatzandroulis, Stavros ...... Tue-D-p10 Chatzipetrou, Marianneza ...... Tue-D-p10 Chawla, Vipin ...... Tue-C-p90 Chelubeev, Dmitry ...... Tue-A-p66 Chen, Ching-Hsiu ...... Thu-D1-c3 Chen, Ching-Hung ...... Wed-C-p89 Chen, Ching-Yao ...... Wed-D-p33 Chen, Chun-Yi ...... Wed-C-p5; Wed-B-p43; Tue-D-p42; ...... Wed-C-p21; Wed-C-p19; Wed-C-p81 Chen, H. L...... Tue-A-p64 Chen, Jianfeng ...... Tue-C-p4 Chen, Junyi ...... Wed-C-p35 Chen, K. H...... Tue-A-p64 Chen, Lei ...... Tue-B-p18; Wed-D-p3 Chen, Shin-Hwa ...... Wed-C-p21 Chen, Wen-Yi ...... Tue-B-p6; Wed-B-p3; Tue-D-p44 Chen, Wenwen ...... Wed-C-p99 Chen, Wun-Yi ...... Tue-D-p32 Chen, Yifang ...... Tue-B3-c1; Tue-B4-c6; Wed-A-p9; ...... Tue-A-p16; Tue-B-p8; Wed-A-p17 Chen, Yijian ...... Wed-B-p55; Tue-B-p52 Chen, Yong ...... Thu-C2-c3; Tue-D-p28; Wed-D-p39; ...... Tue-D-p38; Tue-D-p48; Chen, Zhao-Chi ...... Wed-B-p3; Tue-B-p6; Tue-D-p44; ...... Tue-D-p32 Cheng, Han-Hao ...... Tue-D-p50 Chernenko, Volodymyr ...... Thu-B2-c1 Chernik, Vitaly ...... Tue-A-p66 Chikkadi, Kiran ...... Wed-B8-c3 Chiu, Fu-Chien ...... Wed-C-p101; Wed-C-p89 Cho, Hyeong-Jun ...... Tue-C-p94 Cho, Insoo ...... Wed-C-p97 Cho, Kyoungah ...... Tue-C-p62; Wed-C-p69; Wed-C-p67; ...... Tue-C-p70 Cho, Young Tae ...... Wed-C-p41 Choi, Bum Ho ...... Tue-C-p54 Choi, Byoungdeok ...... Tue-A-p2 Choi, Jin-Woo ...... Wed-D-p11 Choi, Jinyong ...... Tue-C-p62; Tue-C-p70 Choi, Junseo ...... Tue-C-p26 Choi, Kee-Bong ...... Wed-A-p25; Wed-C-p7 Choi, Kyung Hyun ...... Tue-C-p96 Choi, Y. -S ...... Wed-D-p19

Chong, Harold ...... Thu-C1-inv; Wed-C-p65; Tue-C1-c11; ...... Tue-D5-c2 Chou, Yen-Yu ...... Tue-C-p106; Wed-B-p19 Chromík, Štefan...... Wed-C-p15 Chu, Jiaru ...... Tue-C-p4 Ciccacci, Franco ...... Tue-C-p102 Ciminelli, Caterina ...... Tue-C-p18 Clime, Liviu ...... Wed-D-p29 Clube, Francis ...... Wed-A1-c2; Wed-A1-c3 Cocuzza, Matteo ...... Tue-D-p14; Tue-C1-c2; Wed-C-p87 Coll Valenti, Arnau ...... Tue-C-p34 Colle, Dominique ...... Wed-A-p47 Coluccio, Maria Laura ...... Wed-D-p53; Wed-C-p95; Tue-D-p52 Constantoudis, Vassilios ...... Thu-B2-c3 Cooke, Michael ...... Thu-A9-c1; Thu-B2-c4 Cooke, Mike ...... Tue-S1-c4 Coppedè, Nicola ...... Tue-D-p4 Cordeiro, Julien ...... Wed-D-p31; Tue-D6-c4 Córdoba, Rosa ...... Tue-B-p22 Corman, Ramona ...... Tue-C-p32 Costa, Margaret ...... Thu-C1-c2 Costa, Tallis H...... Wed-D-p11 Cotte, Marine ...... Tue-D-p16 Courson, Rémi ...... Wed-A-p71 Craciunoiu, Florea ...... Tue-C-p32 Crestel, Erwan ...... Wed-D-p27; Thu-A4-c6 Crnojević Bengin , Vesna ...... Tue-A-p70 Cui, Hongliang ...... Tue-C-p38 Cumming, David ...... Tue-B-p12 Czyba, Philipp ...... Tue-C-p16 D, Graham ...... Tue-B4-c2 Dahiya, Ravinder ...... Tue-D5-c1 Daimon, Toshinori ...... Tue-C-p44 Dais, Christian ...... Wed-A1-c2; Wed-A1-c3 Dal Zilio, Simone...... Tue-B-p36; Tue-A-p76 Dalamagkidis, Konstantinos ...... Wed-D4-c3 Dante, Silvia ...... Tue-D-p16 Danzberger, Jürgen ...... Wed-A-p43; Tue-A-p32; Tue-A-p42; ...... Tue-A-p40 Daran, Emmanuelle ...... Wed-A-p71 Darvin, Denis ...... Wed-C-p107 Das, Gobind ...... Wed-D-p53 Dattoma, Tommaso ...... Wed-B-p41 David, Christian ...... Tue-B4-c4 Davidsen, Rasmus ...... Tue-B-p16 De Angelis, Francesco...... Thu-D1-c1; Tue-D-p36; Wed-C-p51; ...... Wed-D4-c2; Thu-D1-c10; de Boer, Meint ...... Tue-D-p22 De Gendt, Stefan ...... Thu-B2-c4 de Groot, C. H. (Kees) ...... Wed-C-p71; Wed-C-p73 De Gruijl, T...... Wed-D3-c1 De Hosson, J.T.M...... Tue-S2-c6 de Marneffe, Jean-Francois ...... Tue-B-p20; Thu-B2-c4 De Pascali, Sandra ...... Tue-D-p52 De Planque, Maurits ...... Wed-C-p65; Tue-D5-c2 De Rooij-Lohmann, Véronique ...... Tue-B-p38 De Seta, Monica ...... Wed-A-p11 De Vitis, Stefania ...... Wed-C-p95 De Vittorio, Massimo ...... Tue-C-p18; Thu-C1-c4; Wed-B-p41

Debèda, Hélène ...... Thu-C1-c1 Decanini, Dominique ...... Tue-D5-c3 Decorde, Nicolas ...... Thu-C1-c7 Decuzzi, Paolo ...... Wed-D-p45; Wed-D4-c4 Dekker, Nynke H...... Wed-B-p13 Dekker, R...... Wed-D3-c1 Del Cesta, Francesco ...... Tue-C1-c3 Della Giustina, Gioia ...... Tue-D-p36 Demarina, Natalia ...... Wed-C5-c5 Derode, Arnaud ...... Tue-D-p40 Di Fabrizio, Enzo ...... Wed-C-p95; Wed-D-p53; Tue-D-p52; ...... Tue-D-p4 Di Gaspare, Luciana ...... Wed-A-p11 di Mascolo, Daniele ...... Wed-D4-c4; Wed-D-p45 Di Stasio, Francesco...... Wed-B8-c2 Diao, Zhaolu ...... Wed-C-p99 Dias, Rosana A...... Tue-C-p22; Thu-C1-c2 Díaz-García, María ...... Thu-D1-c12 DiCarlo, Leonardo ...... Wed-C5-inv Diéguez, María José ...... Wed-B-p9 Dielacher, Bernd...... Thu-D1-c11 Dietzel, Andreas ...... Wed-C-p3; Wed-D-p37; Wed-D2-c5 Dipalo, Michele ...... Thu-D1-c1; Thu-D1-c10; Wed-C-p51 Dirks, Jan-Henning ...... Wed-C-p99 Dirnecker, Tobias ...... Wed-B-p5; Wed-D-p23 Ditshego, Jack ...... Wed-C-p65; Tue-D5-c2 Djuric, Zoran...... Wed-C-p61 Dobrowolski, Rafał ...... Wed-C-p23 Doi, Takashi ...... Wed-B-p37 Doise, Jan ...... Tue-A-p60 Domingo, Neus ...... Wed-B7-c4 Doucet, Jean-Baptiste ...... Wed-A-p71 Douglas, Jack ...... Thu-D1-c8; Tue-B-p26 Dr, Bartenlian ...... Wed-D-p47 Dr, Weber Bargioni...... Tue-B3-c3 Dr., Azuma ...... Wed-A6-c4 Dr., Barth...... Tue-B3-inv Dr., Gnauck ...... Thu-D1-c7 Drezner, Yariv ...... Tue-A3-c4 Drouin, Dominique ...... Wed-C5-c1 Droulers, Gabriel ...... Wed-C5-c1 Du, Chunlei ...... Tue-C-p38; Wed-A-p1 Du, Jinglei ...... Wed-C-p35; Wed-C-p37; Wed-C3-c2 Du, Wenqiang ...... Tue-C-p4 Dubourg, Georges ...... Tue-A-p70 Dufour, Isabelle ...... Thu-C1-c1 Dumcenco, Dumitru ...... Wed-A7-c2 Dürig, Urs ...... Wed-A7-c3 Durnez, Alan ...... Wed-B-p31 Durrani, Zahid A.K...... Tue-S1-c6; Wed-C5-c4 Durret, Jerome ...... Tue-A-p34; Wed-A-p27 Dysseholm Mar, Mikkel ...... Wed-C-p59 Dzuba, Jaroslav...... Wed-C-p15 Ebert, Martin ...... Wed-C-p65 Ecoffey, Serge ...... Wed-C5-c1 Egorov, Alexander ...... Wed-C-p107 Egorova, Tatyana...... Wed-C-p107 Eibelhuber, Martin ...... Wed-A-p37 Eidemüller, Wolfgang ...... Tue-A-p68

Ekinci, Yasin ...... Tue-A5-c3; Thu-B1-c1 Emnéus, Jenny ...... Thu-D1-inv; Thu-MEE-YIA Engelmann, Jan ...... Wed-A-p37 Engl, Wolfgang ...... Tue-C1-c5 Erni, Rolf...... Tue-C-p90 Esmail Tehrani, Sheida ...... Wed-D-p15 Espinosa Barea, Francisco M...... Wed-A7-c2 Espinosa, Horacio ...... Tue-Keynote-2 Esteve, Aurore ...... Thu-A4-c6; Wed-D-p27; Wed-B7-c4 Evangelio, Laura ...... Wed-A6-c3 Evans, John ...... Tue-D-p54 Fallica, Roberto ...... Thu-B1-c1; Tue-A5-c3 Fan, Daniel ...... Thu-B1-c1 Fanizzi, Francesco Paolo ...... Tue-D-p52 Fantner, Georg ...... Tue-B-p48 Faraji Rad, Zahra ...... Tue-B4-c2 Farshchian, Bahador...... Tue-C-p26 Fattaccioli, Jacques...... Thu-C2-c3 Fedrizzi Vidor, Fábio ...... Tue-B-p54 Fernandez, Ariadna ...... Tue-A-p24 Ferrara, Lorenzo ...... Tue-D-p4 Ferrari, A.C...... Thu-C1-c7 Ferreira, Ricardo...... Tue-C1-c4 Fetisova, Alyona ...... Tue-C-p52 Feyrer, Christoph ...... Tue-A-p32 Fiala, Jiří ...... Tue-A-p8 Fiedler, Horst ...... Tue-C-p16 Figueiro, Nivea ...... Wed-B-p45 Finazzi, marco ...... Tue-C-p102; Tue-B3-c3 Fiorini, Paolo ...... Wed-D2-c4 Fischinger, Thomas...... Tue-A-p32; Tue-A-p40 Flauraud, Valentin ...... Tue-A-p62; Wed-A7-c1 Flügel-Paul, Thomas ...... Tue-A3-c6 Fobelets, Kristel...... Wed-C5-c7 Foncy, Julie ...... Wed-D-p27; Thu-A4-c6 Fonseca, Helder...... Tue-C1-c4; Thu-C1-c2; Tue-C-p22 Fontana, Eduardo ...... Wed-C-p49 Fontana, Marco ...... Wed-C-p87 Forte, Salvatore ...... Wed-C-p17 Förthner, Michael ...... Wed-A-p23; Tue-A-p26 Fourmy, Dominique ...... Tue-D-p46 Francardi, Marco ...... Tue-D-p36; Wed-D-p45; Wed-D4-c4 Francone, Achille ...... Tue-A-p24 Franklin, Aaron ...... Thu-Keynote-5 Franssila, Sami...... Wed-D2-c1 Fraxedas, Jordi ...... Wed-A6-c3 Freitas, Paulo ...... Tue-C1-c4 Frey, Lothar ...... Wed-A-p23; Wed-B-p5; Wed-D-p23 Friedrich, Oliver ...... Wed-D-p23 Frigerio, Jacopo ...... Tue-B3-c3 Friis Truelsen, Sigurd ...... Wed-D2-c6 Frolet, Nathalie ...... Tue-A-p34; Wed-A-p27 Fu, Jingyan ...... Wed-B-p33 Fuard, David ...... Tue-D6-c4 Fuchimukai, Atsushi ...... Wed-A1-c4 Fuchsbauer , Anita ...... Thu-C1-c7 Fujii, Minoru ...... Thu-A9-c3 Fujii, Shingo ...... Wed-A-p61 Fujita, Hiroyuki ...... Wed-C5-c10

Fukuyama, Masataka ...... Wed-C-p85 Füser, Heiko ...... Tue-A3-c1 Gadegaard, Nikolaj ...... Tue-A5-c2; Thu-A4-c3 Gajewski, Krzysztof...... Wed-B-p47 Galland, Remi ...... Wed-D-p9 Gandolfi, Davide ...... Thu-D1-c9 Gangnaik, Anushka ...... Wed-A-p7 Gao, Fuhua ...... Wed-C-p37; Wed-C3-c2; Wed-C-p35 Garcia, Ricardo ...... Wed-A7-c2 Garcia parajo, Maria F...... Wed-A7-c1 garoli, denis ...... Tue-D-p36; Wed-C-p51 Gaspar, Joao ...... Tue-C1-c4Thu-C1-c2; Tue-C-p22 Gavagnin, Marco ...... Tue-B3-c2; Tue-B-p24; Tue-S2-c2 Gavrikov, Alexander ...... Tue-A-p66 Geiger, Fania ...... Wed-C-p99 Gentile, Francesco ...... Wed-D-p53; Wed-C-p95; Tue-D-p52 Georgiev, Yordan M...... Wed-A-p7 Gerardino, Annamaria ...... Wed-C-p45 Ghazali, Nor Azlin ...... Wed-C-p65 Ghio, Simone ...... Tue-D5-c4 Ghulinyan, Mher ...... Thu-D1-c9 Giardi, Rossella ...... Wed-C-p87 Gibbs, S...... Wed-D3-c1 Giebel, Friederike ...... Tue-C-p16 Gierak, Jacques ...... Thu-D1-c7; Tue-D-p46 Giesecke, Anna Lena ...... Tue-A3-c1 Gigot, Arnaud ...... Wed-C-p87 Gijs, Martin ...... Wed-A-p57 Gilbert, Daniel ...... Wed-D-p23 Giliberti, Valeria ...... Tue-B3-c3 Gillibert, Raymond ...... Wed-D-p47 Giouroudi, Ioanna ...... Wed-D-p25 Giovine, Ennio ...... Wed-A-p11 Girschikofsky, Maiko ...... Wed-A-p23 Gizeli, Electra ...... Tue-D-p18 Gkouzou, Alkisti ...... Wed-C-p79 Glatzel, Thilo ...... Wed-C5-c9 Gleeson, Rachel ...... Tue-C-p36 Glinsner, Thomas ...... Thu-A4-c2; Wed-A-p37; Tue-A-p18 Gnatiuk, Iurii ...... Thu-C1-c7 Goekdeniz, Zeynep ...... Tue-B-p24 Gogolides, Evangelos ...... Thu-B2-c3; Tue-D-p18 Goldschmidtboeing, Frank ...... Thu-C2-c4 Golmar, Federico ...... Wed-B-p9 Gong, Min ...... Tue-C-p58 Gong, Na ...... Wed-B-p33 Gong, Xu...... Wed-B-p49 Goniszewski, Stefan ...... Wed-B-p47 Goodyear, Andy ...... Thu-B2-c4 Gopalakrishnan, Singaram...... Tue-D6-c1 Gordon Hermannsson, Pétur...... Wed-D2-c6 Göritz, Alexander ...... Wed-C-p77 Goswami, Srijit ...... Thu-C1-c6 Goto, Masataka ...... Tue-C-p46; Tue-C-p92 Gotszalk, Teodor ...... Wed-C-p23; Tue-B-p50; Wed-B-p47 Gourgon, Cécile ...... Tue-A-p34; Wed-A-p27 Goustouridis, D ...... Wed-D2-c3 Grabiec, Piotr ...... Wed-C-p23; Tue-B-p50; Wed-B-p47 Gracia, Isabel ...... Tue-C1-c1; Wed-C-p1

Gracia, Joaquin ...... Wed-C-p1 Granell, Pablo ...... Wed-B-p9 Greenzweig, Yuval ...... Tue-A3-c4 Greer, Andrew...... Tue-A5-c2 Greibe, Tine ...... Tue-A-p14 Greibe, Tine ...... Wed-A-p13 Grenci, Gianluca ...... Wed-D-p9; Thu-D1-c4 Griesmann, Ulf ...... Tue-B-p18 Groenesteijn, Jarno ...... Thu-D1-c5; Wed-C-p25; Tue-C-p42 Gronheid, Roel ...... Tue-B-p20; Tue-A-p60 Groot, C. H. (Kees) ...... Wed-B8-c1 Grutter, Peter ...... Wed-A-p63 Grützmacher, Detlev ...... Wed-A1-c1; Wed-C5-c5 Grützner, Gabi ...... Thu-A4-c1; Wed-A-p47; Wed-A-p51; ...... Wed-A-p53; Tue-A5-c2; Tue-B4-c5 Gspan, Christian ...... Tue-B3-inv Gu, Changzhi ...... Tue-B4-c1; Wed-B-p17; Tue-C-p66; ...... Tue-B-p28; Wed-A-p31; Guerra-Nunez, Carlos ...... Tue-C-p90; Tue-A-p12 Guider, Romain ...... Thu-D1-c9 Guido, Francesco ...... Thu-C1-c4 Guliyev, Elshad ...... Tue-A-p18 Gunnarsson, Klas ...... Tue-B3-c2 Gurnani, Chitra ...... Wed-B8-c1 Guttmann, Markus ...... Tue-A-p24 Guzenko, Vitaliy ...... Tue-B4-c4; Wed-B-p29 Gysin, Urs ...... Wed-C5-c9 Ha, Seungkyu ...... Wed-B-p13 Ha, Taeho ...... Wed-C-p43 Ha, Taehong ...... Wed-C-p97 Haapala, Markus ...... Wed-D2-c1 Hackemüller, Franz Josef ...... Wed-C5-c5 Haeryung, Kim ...... Tue-B-p34 Hagen, C. W ...... Tue-B3-c4; Tue-S2-c1; Tue-S2-c4; ...... Wed-B-p21; Tue-B-p44; Tue-C1-c7 Haiden, Christoph ...... Wed-D-p25 Haluska, Miroslav ...... Wed-B8-c3 Hamaguchi, Tetsuya ...... Tue-A-p38; Wed-A-p41 Hamouda, Frederic ...... Wed-D-p47 Han, Anpan ...... Wed-A-p13; Tue-A-p14 Han, Dong-Soo ...... Tue-B-p22 Han, Ting ...... Tue-B-p52; Wed-B-p55 Han, Zhongmei ...... Tue-A-p6 Hansen, Ole ...... Tue-B-p16; Thu-B1-c5 Hantschel, Thomas ...... Wed-B7-c2 Hao, Ling ...... Wed-B-p47 Hara, Motoaki ...... Tue-C1-c6 Harder, Irina ...... Wed-A-p53 Harder, S...... Tue-S2-c6 Hardtdegen, Hilde ...... Wed-A1-c1 Hari, Sangeetha ...... Tue-S2-c4; Wed-B-p21 Häring, Aaron ...... Wed-D-p23 Harnisch, Emely ...... Wed-A-p51 Haruyama, Yuichi ...... Wed-A-p33 Harzendorf, Torsten ...... Tue-A3-c6 Hasegawa, Tsuyoshi ...... Tue-C1-c11 Hashimoto, Tomoko ...... Tue-D-p42 Haslinger, Michael ...... Tue-A-p40; Tue-A-p42 Häusler, Lukas ...... Wed-B-p27

Havenith, R.W.A...... Tue-S2-c6 Hayashi, Terutake ...... Tue-D-p2 Hayward, Tom ...... Tue-C-p72 Hazart, Jerome ...... Wed-B-p45 HE, YINGNING ...... Thu-C2-c2 Hecht, Lars ...... Wed-D-p37 Hector, Andrew ...... Wed-B8-c1; Wed-C-p71 Heerkens, Carel ...... Tue-C1-c7; Wed-C5-c11 Heinrich, Marina ...... Wed-A-p47 Heinzig, André ...... Wed-C5-c3 Heiskanen, Arto ...... Wed-D-p15; Thu-MEE-YIA; Thu-D1-inv HELGUERA, GUSTAVO ...... Tue-D-p34 Hellmann, Ralf ...... Wed-A-p23 Helwig, Andreas ...... Tue-C-p12 Hemanth, Suhith ...... Wed-A-p65; Thu-MEE-YIA Hernandez-Ramirez, Francisco ...... Tue-C1-c1; Wed-C-p1 Hesse, Bernhard ...... Tue-D-p16 Heyderman, Laura Jane ...... Wed-B-p11 Hierold, Christofer ...... Wed-B8-c3 Hilleringmann, Ulrich ...... Tue-B-p54; Wed-C-p91 Hirai, Yoshihiko ...... Thu-A9-c4; Tue-A-p36 Hirohata, Atsufumi ...... Tue-C-p72 Hishiki, Kenta ...... Wed-A-p41 Hiwasa, Shin ...... Wed-A-p19 Hoa, Xuyen ...... Wed-D-p29 Hochleitner, G...... Tue-S2-c2 Hoffmann, Martin ...... Tue-C-p40; Tue-C-p12 Holman, Hoi-Ying ...... Thu-D1-c4 Holmes, Justin D...... Wed-A-p7 Holzinger, Dieter ...... Thu-C1-c7 Holzner, Felix...... Tue-S1-c3; Wed-A-p63 Homma, Yoshikazu ...... Tue-A-p74 Honda, Yoshio ...... Wed-A-p15 Honegger, Thibault ...... Tue-D6-c4 Hong, Hyeongsun ...... Tue-A-p2 Hong, Jian-Wei ...... Wed-A-p67 Hoogenboom, Jacob...... Wed-C-p57; Wed-C5-c11 Horiuchi, Toshiyuki ...... Wed-B-p35 Hortschitz, Wilfried ...... Tue-C-p2; Tue-C-p20 Hosaka, Sumio ...... Wed-A6-c2; Wed-C-p85; Tue-C-p88; ...... Tue-C-p74; Thu-D1-c6; Hoshiko, Kenji ...... Wed-D-p21; Tue-D-p24 Hosoda, Hideki ...... Wed-B-p43; Wed-C-p9 Hou, Ligang ...... Wed-B-p33 Hou, Yidong ...... Wed-C3-c2; Wed-C-p35; Wed-C-p37 Houbertz, Ruth ...... Wed-A-p51 Hsu, Wensyang...... Wed-D-p13 Hu, Chunxiao ...... Tue-D5-c2 Hu, Quanli ...... Tue-C-p76; Wed-C-p75 Huang, Bo-Cin ...... Wed-A-p67 Huang, Cheng-Yeh ...... Wed-D-p13 Huang, Chi-Huang ...... Tue-D-p44; Wed-B-p3 Huang, Jun-Hao ...... Wed-D-p13 Huang, Ruomeng ...... Wed-B8-c1; Wed-C-p71; Wed-C-p73 Huang, Xiaqi ...... Tue-A-p16 Huang-Yeh , Chen ...... Wed-D-p51 Hübner, Jörg ...... Thu-B1-c5 Huda, Miftakhul ...... Wed-C-p85 Huq, Ejaz ...... Wed-A-p49; Tue-A3-c5

Husain, Muhammad Khaled ...... Wed-C-p47 Huszka, Gergely ...... Wed-A-p57 Huth, Michael...... Tue-B3-inv Hwang, Gilgueng ...... Tue-D5-c3 Hwu, En-Te ...... Thu-D1-c3 Iannotta, Salvatore ...... Tue-D-p4 Ichimura, Takashi ...... Wed-B-p37 Igarashi, Hironori...... Wed-A1-c4 Ignatov, Pavel ...... Wed-C-p107 IIda, Tatsuya ...... Tue-A-p36 Ikuhara, Yuichi ...... Wed-C5-c10 Imihami Mudiyanselage, Chiththaka ..... Tue-D-p50 Inamura, Tomonara ...... Wed-B-p43 Ingolfsson, Oddur ...... Tue-S2-c1 Irmscher, Mathias ...... Tue-A-p40 Irmscher, Matthias ...... Tue-D5-inv Isella, Giovanni ...... Tue-C-p102; Tue-B3-c3 Ishchuk, Valentyn ...... Tue-A-p18 Ishibashi, Koji ...... Wed-C5-c6 Ishii, Yasuyuki ...... Tue-A-p50 Islyaykin, Andrey ...... Wed-C-p107 Ito, Shinji ...... Wed-A1-c4 Ito, Takeshi ...... Wed-B-p53 Ivanov, Tzvetan ...... Tue-A-p18; Wed-A7-c4 Jachimowicz, Artur ...... Tue-C-p20 Jacot-Descombes, Loic ...... Tue-B4-c5 Jakobsen, Anders Clemen ...... Thu-B1-c5 Jamalieh, Murad ...... Wed-D-p25 Jang, Shin ...... Thu-C1-c3; Wed-C-p93 Janissen, Richard ...... Wed-B-p13 Janssen, G. C. A. M...... Wed-C-p79 Janßen, Johanna ...... Wed-C5-c5 Janus, Paweł ...... Tue-B-p50 Jenni, Laura Vera ...... Wed-B8-c3 Jensen, Flemming ...... Thu-B1-c5; Wed-C-p59 Jeon, Sanghyeon ...... Wed-C-p97 Jeong, Ji Yun ...... Wed-C-p41 Jeong, Mira ...... Tue-A-p22 Jeong, Sanghee ...... Wed-A-p45 Ježková, Kateřina...... Tue-C-p28 Ji, Seungmuk ...... Wed-B-p51 Jiang, Qianqing ...... Tue-C-p66 Jin, Gyoyoung ...... Tue-A-p2 Jin, Peng ...... Tue-C-p64 Jin, Tao ...... Tue-D6-c3 Jo, Jeongdai ...... Tue-C-p96 Jobst, G ...... Wed-D2-c3 Johansen, Leif Steen ...... Wed-A-p13 Jokic, Ivana ...... Wed-C-p61 Jokinen, Ville ...... Tue-D-p20 Jolleys, Andrew ...... Wed-C-p71 Jones, Benjamin ...... Wed-D2-c4 Jones, Mervyn E...... Wed-C5-c4 Junesch, Juliane ...... Thu-D1-c11 Jung, Donggeun ...... Tue-C-p94 Jung, Hyuckchai ...... Wed-C-p97 Jung, Sanghee ...... Tue-A-p48; Wed-A-p25; Tue-A-p22 Jung, Thomas ...... Wed-C5-c9 Jung, Yun Gyo ...... Wed-C-p41

Jurisch, Michael ...... Tue-A-p40 Juskova, Petra ...... Tue-D-p40 Kador, Lothar ...... Thu-A4-c2 Kaestner, Marcus ...... Wed-A7-c4 Kainz, Andreas ...... Tue-C-p20; Tue-C-p2 Kaiser, Christian ...... Tue-A-p4 Kakimoto, Shohei ...... Wed-A-p19 Kakizaki, Kouji ...... Wed-A1-c4 Kalhor, Nima ...... Wed-A-p3 Kallis, Klaus...... Tue-C-p16 Kalnov, Vladimir ...... Wed-A-p69 Kamiya, Tomihiro ...... Tue-A-p50 Kanai, Hideki ...... Wed-A6-c4 Kang, Chi Jung ...... Tue-C-p76 Kang, Daejoon ...... Tue-A-p48 Kang, Il-Suk...... Wed-C-p55 Kao, Yu-min ...... Wed-B-p19 Kaprou, Georgia ...... Tue-D-p18 Karg, Siegfried ...... Wed-A7-c3 Kasahara, Yusuke ...... Wed-A6-c4 Kastania, Athina S...... Tue-D-p18 Kastner, Julia ...... Thu-C1-c7 Kataria, Satender...... Thu-C1-c5 Kato, Hiroki ...... Tue-A-p74 Kato, Mikihiro ...... Tue-A-p74 Kawakami , Tomoyuki ...... Thu-D1-c6 Kawano, Michitaka ...... Tue-C-p68 Kawashima, Kenta ...... Tue-C-p14 Kawata, Hiroaki ...... Thu-A9-c4 Kawata , Hiroaki ...... Tue-A-p36 Kawatsuki, Nobuhiro ...... Wed-A-p33 Kehagias, Nikos ...... Tue-A-p24 Keller, Stephan ...... Thu-MEE-YIA Keller, Lukas ...... Tue-B3-inv Keplinger, Franz ...... Wed-D-p25; Tue-C-p20; Tue-C-p2 Kessels, Erwin ...... Tue-B-p4 Khalid, Ata ...... Tue-B-p12 Kiang, Kian Shen ...... Wed-C-p73 Kiessling, Tobias ...... Wed-C5-c12 Kigami, Hiroshi ...... Wed-A-p29 Kikuta, Hisao ...... Thu-A9-c4 Kim, Beomjoon ...... Wed-B-p1; Tue-C-p68 Kim, Chul Min ...... Wed-D4-c1 Kim, D. S...... Wed-D-p19 Kim, Dong Sung ...... Wed-D-p41 Kim, Dong-gu...... Tue-C-p6; Wed-C-p103 Kim, E. -S ...... Wed-D-p19 Kim, Geehong ...... Wed-C-p7; Wed-A-p25 Kim, Gyu Man...... Wed-D4-c1 Kim, Hee Yeoun ...... Wed-C-p55 Kim, Hyounjin ...... Thu-C1-c3; Wed-C-p93 Kim, Hyunsoo ...... Wed-C-p103; Tue-C-p6 Kim, Inki ...... Wed-C3-inv Kim, J. -Y ...... Wed-D-p19 Kim, Ji-Hwan ...... Tue-C-p94 Kim, Jung-Mu ...... Wed-C-p49 Kim, Kwang-Young ...... Tue-C-p96 Kim, Kyeong Heon ...... Tue-C-p100 Kim, Min Ju...... Wed-C-p105; Tue-C-p100

Kim, Minkyung ...... Wed-C3-inv Kim, Myung Ju ...... Wed-C-p105; Tue-C-p100 Kim, Namsu ...... Wed-B-p51 kim, sangkon ...... Wed-A-p59 Kim, Sangsig ...... Tue-C-p62; Wed-C-p69; Wed-C-p67; ...... Tue-C-p70 Kim, Seunghwan...... Wed-C-p97; Wed-C-p43 Kim, Tae Geun ...... Wed-C-p105; Tue-C-p100 Kim, Yeongjun ...... Wed-C-p93; Thu-C1-c3 Kim, Yong-Kweon ...... Tue-C-p86 Kim, Yong-Sang ...... Tue-C-p94 Kim, Youngjin ...... Wed-C-p43 Kim, Youngwoo ...... Wed-C-p97 Kirchner, Robert ...... Wed-B-p29; Thu-B1-c3 Kiriazis, Alexandros ...... Wed-D2-c1 Kirk, Eugenie ...... Tue-B4-c4; Wed-B-p11 Kirtaev, Roman ...... Tue-C-p52 Kiryushina, Irina ...... Wed-C-p107 Kis, Andras ...... Wed-A7-c2 Kissling, Gabriela ...... Wed-C-p71 Klein, Jan Jasper ...... Wed-A-p51; Tue-A-p26 Kleinlein, Johannes ...... Wed-C5-c12; Tue-A-p56 Klimpel, Thomas ...... Wed-B7-c3 Knight, Mark...... Thu-A4-c4 Knoll, Armin ...... Wed-A7-c3; Wed-A7-inv Kobayashi, Equo ...... Wed-C-p9 Kobayashi, Katsutoshi ...... Wed-A6-c4 Koch, Eugen Viktor ...... Wed-D2-c5 Kodera, Katsuyoshi ...... Wed-A6-c4 Kohl, Franz ...... Tue-C-p2 Kohl, Manfred ...... Thu-B2-c1 Köhle, Marcel ...... Tue-C-p16 Kojić, Sanja ...... Tue-A-p70 Kokkinis, Georgios ...... Wed-D-p25 Kokorian, Jaap ...... Tue-C1-c12; Wed-C-p79 Kolander, Anett ...... Wed-A-p53 Kolander, Karola ...... Tue-C-p16 Kolew, Alexander ...... Tue-B4-c3 Kometani, Reo ...... Tue-C1-c9; Tue-C-p46; Tue-B-p30; ...... Tue-C-p92 Kondoh, Eiichi ...... Thu-B2-c2 Kondratowicz, Izabela ...... Tue-C-p56 Konishi, Toshifumi ...... Wed-C-p11; Wed-C-p81 Koopmans, Bert ...... Tue-B-p22 Koops, Richard ...... Tue-B-p46 Köpplmayr, Thomas ...... Wed-B-p27 Korak, Johannes ...... Tue-A-p32 Koutsos, Vasileios ...... Wed-A-p75 Kovář, Petr ...... Tue-C-p30 Kozawa, Takahiro ...... Tue-A5-inv Kraft, Michael ...... Tue-C1-c10 Krahne, Roman...... Wed-B8-c2; Tue-D-p16 Krali, Emiljana ...... Wed-C5-c4 Krasnikov, Gennady...... Wed-C-p107 Kristensen, Anders ...... Wed-D2-c6 Krivoshapkina, Yana ...... Wed-A7-c4 Kruit, Pieter ...... Tue-Keynote-1; Tue-S2-c4; Wed-C-p57; ...... Tue-B3-c4; Tue-B-p44; Wed-B-p37; ...... Wed-B-p21; Tue-C1-c7

Kuan-Tao, Li ...... Wed-B-p19 Kubota, Hitoshi...... Wed-A6-c4 Kuittinen, Markku ...... Wed-A-p5 Kulmala, Tero ...... Tue-A5-c3; Thu-B1-c1 Kumar, Dhiraj ...... Tue-D-p54 Kumar, Madhav ...... Thu-C1-c8 Kumar, Praveen ...... Wed-A-p73 Kumpfmüller, Josef ...... Thu-A4-c2 Kunicki, Piotr ...... Tue-B-p50 Kunicki, Piotr ...... Wed-B-p47 Kurek, Maksymilian ...... Wed-C-p39 Kurosu, Hiromichi ...... Tue-D-p42 Kurz, Heinrich ...... Tue-A3-c1; Tue-A-p20 Kuwano, Hiroki ...... Tue-C1-c6 Kwo, J. R...... Tue-A-p64 Kwon, Soongeun ...... Wed-A-p25 Kwon, Sungruel ...... Tue-C-p94 La Rocca, Rosanna ...... Thu-D1-c10; Thu-D1-c1 LADOUX, Benoit ...... Tue-D-p38 Lagae, Liesbet...... Wed-D2-c4 Lakens, Niels ...... Wed-B-p21 Lalinský, Tibor ...... Wed-C-p15 Lam, Yun Wah ...... Tue-D6-c1 Lambrecht, Franziska ...... Thu-B2-c1 Lammerink, Theo ...... Tue-C-p42 Lamy de la Chapelle, Marc ...... Wed-D-p47 Larsen, Peter Emil ...... Wed-C-p39 Lasorsa, Carlos ...... Wed-B-p9; Tue-D-p34 Laukkanen, Janne ...... Wed-A-p5 Laureti, Sara ...... Wed-C-p45 Lavrinenko, Andrei ...... Wed-C-p59 Lay, Christian ...... Thu-B2-c1 Lazzarino, Marco ...... Tue-A-p76 Le Boulbar, Emmanuel ...... Wed-B-p15 Le Bourhis, Eric ...... Wed-B-p31 Leblebici, Yusuf ...... Tue-B-p48 Lecarme, Olivier ...... Wed-D-p31 Lee, Aeju ...... Wed-D4-c4 Lee, B. -K ...... Wed-D-p19 Lee, Bom-yee ...... Wed-A-p39 Lee, Bong-Kee ...... Wed-A-p39 Lee, Byeong Ryong ...... Tue-C-p100; Wed-C-p105 Lee, Changwoo ...... Wed-C-p43 Lee, D. -W...... Wed-D-p19 Lee, Dong-Hoon ...... Tue-C-p94 Lee, Donghoon ...... Wed-C-p67 Lee, Fu-Wei ...... Thu-D1-c2 Lee, Haebum ...... Wed-C-p97 Lee, Jaehak ...... Wed-C-p43 Lee, Jaejong ...... Wed-C-p7; Wed-A-p45; Tue-A-p48; ...... Wed-A-p25; Tue-A-p22; Tue-A-p46 Lee, Jong Ho ...... Tue-C-p54 Lee, Jong-Kwon ...... Wed-C-p55 Lee, Keekeun ...... Wed-D-p55 Lee, Kook-Nyung ...... Tue-C-p86 Lee, Kweonjae ...... Tue-A-p2 Lee, Meng-Shiue ...... Wed-D-p13 Lee, Min-Ho...... Tue-C-p86 Lee, Sangwook ...... Wed-A-p25

Lee, Sunghwi ...... Wed-A-p25 Lee, Suok ...... Tue-A-p48 Lee, Taewoo ...... Wed-C-p97 Lee, Ya-Wei ...... Tue-B-p6; Wed-D-p33; Tue-D-p32 Lee, Yeeu-Chang ...... Tue-C-p106; Wed-B-p19 Lee, Yeonsu ...... Wed-C-p49 Lee , Chul...... Tue-A-p2 Lee , Sang-ho ...... Tue-A-p46 LEICHILE, Thierry ...... Thu-C2-c2 Lemma, Enrico Domenico ...... Wed-B-p41 Lemme, Max Christian ...... Thu-C1-c5 Lenk, Steve ...... Wed-A7-c4 Leonard, Anthony...... Wed-D-p31; Tue-D6-c4 Lepsa, Mihail Ion ...... Wed-C5-c5 Lercarme, Olivier ...... Tue-D6-c4 Lerner, Betiana ...... Tue-D-p34; Wed-B-p9 Leskelä, Markku ...... Tue-A-p6 Leuthold, Juerg ...... Tue-B4-c3 Levason, William ...... Wed-B8-c1; Wed-C-p71 Lewins, Chris ...... Wed-B-p15 Li, Junjie ...... Wed-A-p31; Tue-B4-c1; Tue-B-p28; ...... Wed-B-p17; Tue-C-p66; Li, Meng ...... Tue-C-p90 Li, Xin ...... Tue-B-p8; Wed-A-p9 Li, Yan-Hom ...... Wed-D-p33 Li, Yun ...... Tue-C-p58 Liddle, James ...... Thu-D1-c8; Tue-B-p26 Lim, Hyuneui ...... Wed-B-p51 Lim, Hyungjun ...... Wed-A-p25; Wed-A-p45; Wed-C-p7; ...... Tue-A-p22; Tue-A-p46; Limbeck, Hannes ...... Tue-A-p32 Lin, Guanyang ...... Tue-A-p60 Lin, Jie ...... Tue-C-p64 Lindner, Jiří ...... Tue-C-p30; Tue-C-p28 Linfield, Edmund ...... Tue-A-p54 Liu, Bin ...... Tue-C-p64 Liu, Fenglei ...... Wed-A-p1 Liu, Guangli ...... Tue-C-p4 Liu, Hongyi ...... Tue-B-p52; Wed-B-p55 Liu, Huan ...... Tue-C-p64 Liu, Jianmiao ...... Tue-D-p28 Liu, Jianpeng ...... Tue-B-p8; Wed-A-p9; Wed-A-p17 Liu, Y. C...... Tue-A-p64 Livengood, Richard ...... Tue-A3-c4 Llamas-Garro, Ignacio ...... Wed-C-p49 Llobera, Andreu...... Wed-C-p83 Llobet, Jordi...... Wed-C5-c4 Lo, Cheng-Yao ...... Wed-A-p67 Lobotka, Peter ...... Wed-C-p15 Löffler, Markus ...... Wed-C5-c3 Lohse, Olga ...... Wed-A-p53 Lokhorst, Sebastiaan ...... Tue-B-p44 Lorenz, Pierre ...... Tue-C-p8 Lorenzelli, Leandro ...... Tue-D5-c1; Tue-C-p82 Lorenzoni, Matteo ...... Wed-A6-c3 Lotters, Joost ...... Thu-D1-c5; Tue-C-p42; Wed-C-p25 Lottin, Thibault ...... Thu-D1-c7 lovato, laura ...... Tue-D-p36 Lozano, Helena ...... Wed-B7-c4

Lu, Bingrui ...... Tue-A-p16; Wed-A-p9; Wed-A-p17 Lu, Liangxing...... Thu-A9-c2 Luttge, Regina ...... Tue-D-p22; Wed-D3-c2 Ma, Li-Ya ...... Wed-C-p63 Maas, Diederik ...... Wed-B7-c1; Wed-A-p3; Tue-B-p38 Machida, Katsuyuki ...... Wed-C-p81; Wed-C-p5; Wed-C-p11; ...... Wed-C-p19 Mackus, Adrie ...... Wed-B8-inv Madianos, Leonidas ...... Tue-D-p10 Madouri, Ali ...... Thu-D1-c7 Maeda, Etsuo ...... Tue-C-p46; Tue-B-p30; Tue-C1-c9; ...... Tue-C-p92 Magnano, Elena ...... Tue-A-p76 Mahmud, M. A. Parvez ...... Wed-C-p7 Mahne, Nicola ...... Tue-B-p36 Maier, Konrad ...... Tue-C-p12 Maier, Thomas ...... Wed-C3-c1 Mailfert, Julien ...... Tue-A-p60 Maiolo, Luca ...... Wed-A-p11 Maisonneuve, Benoit ...... Tue-D6-c4 Majeed, Bivragh ...... Wed-D2-c4 Majorovits, Endre ...... Thu-D1-c7 Majstrzyk, Wojciech ...... Wed-C-p23; Tue-B-p50 Makarona, E ...... Wed-D2-c3 Mäkelä, Tapio...... Tue-A-p28; Wed-A-p19 Malaquin, Laurent ...... Wed-D-p27; Thu-A4-c6 Malaquin, Laurent ...... Tue-D-p40 Malara, Natalia ...... Tue-D-p52 Malureanu, Radu...... Wed-C-p59 Maniam, Sivakumar M...... Thu-D1-c4 Manneschi, Chiara...... Wed-D4-c4 Manouras, Theodoros ...... Tue-A5-c4; Wed-A-p55 Mansfield, Daniel ...... Wed-C-p33 Manzo, Carlo ...... Wed-A7-c1 Mao, Hongyan ...... Tue-C-p38 Marasso, Simone Luigi ...... Wed-C-p87; Tue-D-p14; Tue-C1-c2 Marbach, Hubertus ...... Tue-S2-c3 Margesin, Benno ...... Tue-C-p82 Marin, Francesco ...... Wed-C-p17 Marinaro, Giovanni ...... Wed-D4-c2 Marinov, Kolyo ...... Wed-A7-c2 Marocco, Giovanna A...... Tue-C-p18 Martin Garcia, Isidro ...... Tue-C-p34 Martinez-Perdiguero, Josu ...... Thu-D1-c12 Martinez-Rivas, Adrian ...... Wed-D-p7; Tue-D-p8 Martinez-Silva, Victor ...... Wed-D-p7 Masclaux, Céline ...... Tue-A-p34 Mason, Nigel ...... Tue-S2-c1 Mastropaolo, Enrico ...... Wed-A-p75 Masu, Kazuya ...... Wed-C-p11; Wed-C-p5; Wed-C-p81 Masu, Kazuya ...... Wed-C-p19 Mathé, Jérôme ...... Thu-D1-c7 Matovic, Jovan ...... Tue-A-p70 Matruglio, Alessia...... Tue-B-p36; Tue-A-p76 Matsui, Shinji ...... Tue-A3-c2; Wed-A-p33 Matsunaga, Takashi ...... Wed-A1-c4 Matthes, Patrick ...... Wed-B-p11 Matveyev, Yuri ...... Tue-C-p52 Mayr, Torsten...... Wed-D2-c2

Md Rezali, Fazliyatul Azwa ...... Wed-C-p63 Mehner, Hannes ...... Tue-C-p40 Meichner, Christoph ...... Thu-A4-c2 Melino, Gianluca ...... Wed-D-p53 Melli, Mauro ...... Tue-B3-c3 Mendoza-Acevedo , Salvador ...... Tue-D-p8 Meneghesso, Gaudenzio ...... Tue-C-p82 Mensch, Philipp ...... Wed-A7-c3 Merino, Santos ...... Tue-A-p44; Thu-D1-c12 Mesdjian, Olivier ...... Thu-C2-c3 Messerschmidt, Martin ...... Tue-A5-c2; Thu-A4-c1; Tue-A-p20 Messina, Gabriele ...... Thu-D1-c10; Thu-D1-c1 Meyer, Ernst...... Wed-C5-c9 Meyers, Thorsten ...... Tue-B-p54; Wed-C-p91 Meziere , Fabien ...... Tue-D-p40 Michael-Lindhard, Jonas...... Thu-B1-c5 Michel, Felix ...... Tue-A-p26 Michler, Johann ...... Tue-C-p90 Miele, Ermanno ...... Thu-D1-c10 Mika, Johann ...... Tue-D-p26; Tue-B-p24; Tue-S2-c2 Mikheev, Petr ...... Tue-A-p66 Mikulics, Martin ...... Wed-A1-c1 Mincigrucci, Riccardo ...... Tue-B-p36 Minegishi, Shinya ...... Wed-A6-c4 Mineta, Takashi ...... Tue-C-p14 Mivelle, Mathieu ...... Wed-A7-c1 Miyagi, Ken ...... Wed-A6-c4 Miyakoshi, Takumi ...... Tue-C1-c9 Miyazaki, Goh...... Tue-D-p2 Miyazaki, Shunpei ...... Wed-C-p27 Miyoshi, Hidetatsu ...... Tue-A3-c3 Mizoguchi, Hakaru ...... Wed-A1-c4 Mizoguchi, Teruyasu ...... Wed-C5-c10 Mizuta, Hiroshi ...... Thu-C1-inv; Tue-C1-c11 Moczala, Magdalena ...... Wed-C-p23 Moerland, Robert ...... Wed-C-p57; Wed-C5-c11 Molenkamp, Laurens...... Tue-A-p56 Molenkamp, Laurens...... Wed-C5-c12 Mølhave, Kristian ...... Tue-C-p56 Møller-Nilsen, Rolf ...... Tue-C-p56 Mombello, Domenico...... Tue-D-p14; Wed-C-p87; Tue-C1-c2 Mondiali, Valeria ...... Tue-C-p48 Montel, Fabien ...... Thu-D1-c7 Moon, Seung Ki ...... Tue-B-p34 Morales-Vidal, Marta ...... Thu-D1-c12 Morana, Bruno ...... Wed-C-p17 Moreau, Julien ...... Wed-D-p47 Morelli, Lidia ...... Thu-D1-c3 Moreno, Mauricio ...... Wed-D-p17 Morgan, Hywel ...... Tue-D5-c2 Morhell, Nadim ...... Tue-D-p30 Morin, Alan ...... Thu-D1-c7 Morris, Michael ...... Wed-Keynote-3 Morton, Keith ...... Wed-D-p29 Mosca, Roberto ...... Tue-C1-c2 Moshkalev, Stanislav ...... Tue-D-p12; Tue-A-p12 Muenzhuber, Franz ...... Wed-C5-c12 Mulders, Hans ...... Tue-S2-c4 Mühlberger, Michael ...... Wed-A-p43; Tue-A-p40; Wed-B-p27;

...... Tue-A-p42; Tue-A-p32; Müller, Jens ...... Tue-B3-inv Müller, Lutz ...... Tue-C-p12 Mulloni, Viviana ...... Tue-C-p82 Muñoz, Francesc Xavier ...... Wed-D-p17 Muñoz-Aguirre, Narcizo ...... Tue-D-p8 Muoth, Matthias ...... Wed-B8-c3 Murakami, Takahiro ...... Tue-B-p30 Murillo, Gonzalo ...... Wed-B7-c4 Muruganathan, Manoharan ...... Thu-C1-inv Mutreja, Isha ...... Tue-D-p54 Na, Moon-Hee ...... Wed-D-p41 Nadar, Gokhan ...... Tue-B-p48 Nagai, Moeto ...... Tue-D-p2; Wed-A-p61 Nagato, Keisuke ...... Wed-A-p41; Tue-A-p38 Wed-C-p27 Nagoshi, Takashi ...... Tue-C-p80; Wed-C-p9 Nakamura, Yoshiki...... Thu-B2-c2 Nakano, Kimihiko ...... Tue-C-p68 Nakao, Masayuki ...... Wed-A-p41; Tue-A-p38; Wed-C-p27 Nanda, Gaurav ...... Thu-C1-c6 Nannini, Matthieu ...... Wed-A-p63 Nappini, Silvia ...... Tue-A-p76 Nedelcu, Oana ...... Tue-C-p32 Negrov, Dmitriy ...... Tue-C-p52 Nesser, Hussein ...... Thu-C1-c1 Neuber, Christian ...... Thu-A4-c2 Nidetzky, Bernd ...... Wed-D2-c2 Nielsen, Theodor ...... Tue-A-p24 Niesel, Thalke ...... Wed-C-p3 Nihei, Mizuhisa...... Wed-A-p21 Nilsson, Bengt ...... Tue-A-p10 Nilsson, Sofia ...... Wed-D2-c1 Nishikawa, Hiroyuki ...... Tue-A-p50 Nishitani, Tomohiro...... Wed-A-p15 Nissen, Dennis ...... Wed-B-p11 Nordin, A.N...... Wed-C-p63 Nordon, Robert ...... Tue-B4-c2 Notargiacomo, Andrea ...... Tue-C-p10; Wed-A-p11 Nowak, Christoph ...... Tue-A-p20 Ó Mathúna, Cian ...... Tue-A-p72 O'Grady, Kevin ...... Tue-C-p72 Obreja, Cosmin...... Wed-B-p7 Oezelt, Harald ...... Wed-B-p11 Oh, H.J...... Wed-D-p55 Oh, Hyungon ...... Wed-C-p69 Oh, Je Hoon ...... Thu-C1-c3; Wed-C-p93 Oh, Sharon ...... Thu-B1-c2 Ohya, Kaoru ...... Wed-B7-c1 Ohyama, Kazumasa ...... Wed-A6-c2 Oishi, Jun ...... Tue-C-p92 Oizumi, Hiroaki ...... Wed-A1-c4 Ojima, Kai ...... Wed-A-p35 Ok, Jeong Tae ...... Tue-C-p26; Thu-C2-c1 Okada, Makoto ...... Tue-A3-c2; Wed-A-p33 Okano, Nao ...... Wed-B-p43 Oloyede, Adekunle ...... Tue-D-p50 Olziersky, Antonios...... Wed-A-p55 Omar, Izzati ...... Wed-C5-c8 Ono, Hiroshi ...... Wed-A-p33

Opara, Nadia ...... Tue-d6-c3 Ortega Villasclaras, Pablo ...... Tue-C-p34 Otell, Ziad ...... Tue-B-p20 Owen, James ...... Thu-B1-c6 Ozerin, Yury...... Wed-C-p107 Padeste, Celestino ...... Tue-d6-c3 Padmanabhan, Preethi ...... Wed-B8-c4 Pagkali, V ...... Wed-D2-c3 Pan, Tung-Ming ...... Wed-C-p101; Wed-C-p89 Panabière, Marie ...... Wed-A-p27 Pandraud, Gregory ...... Wed-C-p17 Pang, Stella W...... Tue-D6-c1 Papadakis, George...... Tue-D-p18 Papenheim, Marc ...... Tue-A-p68; Tue-A-p30; Tue-A5-c1; ...... Tue-C-p8 Paredis, Kristof ...... Wed-B7-c2 Park, Eung-Kyu ...... Tue-C-p94 Park, Hyung Gyu ...... Tue-C-p90 Park, Jeongwon ...... Thu-B1-c2 Park, Jung ...... Wed-D-p55 Park, Mi Ra ...... Wed-C-p75; Tue-C-p76 Park, Sang-Gyu ...... Tue-C-p6 Park, Seung-Chul ...... Wed-B-p51 Park, Sukhyung ...... Wed-C-p69 Park, Sunggook...... Tue-C-p26; Thu-C2-c1 Park, Tae Hoon ...... Wed-C-p105; Tue-C-p100 Park, Y...... Wed-D-p55 Park, Yoonbeom ...... Wed-C-p67 Pastoriza, Hernan ...... Tue-D-p30 Paternoster, Giovanni ...... Tue-D5-c4 Pathangi, Hari ...... Wed-A6-c1 Patriarche, Gilles ...... Wed-B-p31 Paul, Philip ...... Wed-A-p63 Pavesi, Lorenzo ...... Thu-D1-c9 PAYÉS, CRISTIAN...... Tue-D-p34 Paz, Elvira ...... Tue-C1-c4 Pea, Marialilia ...... Wed-A-p11; Tue-C-p10 Peeters, Sara ...... Tue-D-p24; Wed-D-p21 Peinado, Patricia ...... Tue-S2-c5; Wed-B-p23 Pelizzo, Maria G...... Wed-C-p51 Penzkofer, Christian ...... Tue-C1-c5 PEREZ, MAXIMILIANO ...... Tue-D-p34; Wed-B-p9 Perez-Murano, Francesc...... Wed-A6-c3; Wed-C5-c4 Perfetti, Claire ...... Tue-C1-c8 Peric, Oliver ...... Tue-B-p48 Perozziello, Gerardo ...... Wed-D-p1 Perrone, Denis ...... Tue-C1-c2 Persson, Anders ...... Tue-B3-c2 Petrou, P.S...... Wed-D2-c3 Peyrade, David ...... Wed-D-p31; Tue-D6-c4 Pfirrmann, Stefan ...... Wed-A-p53 Pianigiani, Michele ...... Thu-B1-c3 Picard, Emmanuel ...... Tue-D6-c4 Pillatsch, Lex ...... Tue-A-p12 Pingue, Pasqualantonio ...... Wed-C-p33 Pioro-Ladrière, Michel ...... Wed-C5-c1 Piotto, Massimo ...... Tue-C1-c3 Pirri, Candido Fabrizio ...... Tue-C1-c2; Wed-C-p87; Tue-D-p14 Pisanello, Ferruccio ...... Wed-B-p41

Plachetka, Ulrich ...... Tue-A-p20 Plank, Harald ...... Tue-B3-inv Plante, Marie-Paule ...... Wed-D-p47 Plenat, Thomas ...... Tue-D-p46 Pohlit, Merlin ...... Tue-B3-inv Polenciuc, Ioan ...... Tue-C-p72 Polman, Albert ...... Thu-A4-c4 Poncelet, Lucas ...... Wed-D-p29 Porrati, Fabrizio ...... Tue-B3-inv Porschatis, Caroline ...... Tue-A3-c1 Porter, Benjamin ...... Tue-A-p58 Poulsen, Henning Friis ...... Thu-B1-c5 Prades, Juan Daniel ...... Tue-C1-c1; Wed-C-p1 Pratap, Rudra ...... Wed-A-p73 Prewett, Philip...... Wed-A-p49; Tue-A3-c5; Tue-B4-c2; ...... Tue-S1-c2 Přibyl, Michal ...... Tue-C-p28 Primo, Luca ...... Tue-D-p14 Principi, Emiliano...... Tue-B-p36 Prinz, Adrian ...... Wed-A-p43 Prinz, Christelle ...... Tue-D6-inv Prinzen, Andreas ...... Tue-A3-c1 Proa-Coronado, J. Roberto ...... Tue-D-p8 Proa-Coronado, Sergio ...... Tue-D-p8 Probst, Christian ...... Thu-A4-c2 Prodi, Giovanni Andrea ...... Wed-C-p17 Pu, Suan Hui ...... Tue-C1-c10 Pugno, Nicola Maria ...... Tue-D5-c4 Puliafito, Alberto ...... Tue-D-p14 Pusino, Vincenzo ...... Tue-B-p12 Qiao, Lu ...... Wed-C5-c7 Qualtieri, Antonio...... Tue-C-p18; Thu-C1-c4; Wed-B-p41 Quntana, José Antonio ...... Thu-D1-c12 Rackauskas, Simas ...... Tue-D-p12 Rademaker, Guido ...... Tue-C1-c7 Raimondi, Lorenzo ...... Tue-B-p36 Rakhovsky, Vadim ...... Tue-A-p66 Ramirez-Salinas , Marco A...... Wed-D-p7; Tue-D-p8 Ramiro, Jorge ...... Tue-A-p44 Ranchin, Sergey ...... Wed-C-p107 Randall, John ...... Thu-B1-c6 Rangelow, Ivo ...... Tue-A-p18; Tue-S1-c1; Wed-A7-c4 Raptis, I ...... Wed-D2-c3 Ras, Robin ...... Wed-D2-c1 Rasadujjaman, Md ...... Thu-B2-c2 Ravasio, Andrea ...... Thu-D1-c4 Raveh, Amir ...... Tue-A3-c4 Rawlings, Colin ...... Wed-A7-c3 Rebigan, Roxana ...... Tue-C-p32 Redman-White, William ...... Tue-C1-c11 Rehman, M. Muqeet ...... Tue-C-p96 Reid, Gillian ...... Wed-B8-c1; Wed-C-p71 Reig, Benjamin ...... Wed-A-p71 Ren, Yan ...... Tue-B3-c4; Wed-B-p37 ren, zhong ...... Tue-B-p10 Reshanov, Sergey ...... Wed-C5-c9 Retolaza, Aritz ...... Thu-D1-c12; Tue-A-p44 Rho, Junsuk ...... Wed-C3-inv Ribeiro, Igor ...... Tue-C-p22

Richter, Christoph ...... Wed-C-p13 Rieger, Torsten ...... Wed-C5-c5 Riekel, Christian ...... Wed-B8-c2; Wed-D4-c2; Tue-D-p16 Rinaldi, Antonio ...... Tue-C-p10; Wed-A-p11 Rindzevicius, Tomas ...... Tue-B-p14 Ristic, Sasa...... Wed-A-p63 Ritala, Mikko ...... Tue-A-p6 Rius, Gemma ...... Tue-C1-c8 Rivolo, Paola...... Wed-C-p87 Rizzi, Francesco ...... Tue-C-p18; Wed-B-p41 Robinson, Alex ...... Tue-A-p52; Wed-A-p49 Rocha, Luis ...... Tue-C-p22 Rocha, Luis A...... Thu-C1-c2 Rodrigues Vaz, Alfredo ...... Tue-A-p12 Rodriguez, Isabel ...... Wed-D-p49 Roediger, P...... Tue-S2-c2 Rogozhin, Alexander ...... Wed-A-p69 Rohan, James ...... Tue-A-p72 Rolf, Erni...... Tue-A-p12 Romanato, Filippo ...... Tue-D-p6 Romano-Rodriguez, Albert ...... Tue-C1-c1; Wed-C-p1 Rommel, Marcus ...... Tue-A-p10 Rommel, Mathias ...... Wed-A-p23; Tue-A-p26; Wed-B-p5; ...... Wed-D-p23; Tue-B-p42; Rond, Johannes ...... Tue-A5-c1 Rooks, Michael ...... Thu-B1-c2 Rosamond, Mark ...... Tue-A-p54 Rossmann, Harald ...... Wed-C5-c9 ROY, Emmanuel ...... Tue-D-p38 Rudek, Maciej ...... Tue-B-p50 Rumler, Maximilian ...... Tue-A-p26; Wed-A-p23; Tue-B-p42; ...... Wed-B-p5 Ruscica, Jérémy ...... Wed-D-p47 Russew, Maria-Melanie ...... Wed-A-p51 Rýger, Ivan ...... Wed-C-p15 Ryu, JiHyeong ...... Tue-A-p46 Ryu Cho, Yu Kyoung ...... Wed-A7-c2 Saastamoinen, Toni ...... Wed-A-p5 Sachser, Roland ...... Tue-B3-inv Saeed, Anwer ...... Thu-A4-c3 Saito, Akiko ...... Thu-D1-c6 Saito, Shin-ichi ...... Wed-C-p47 Sakat, Emilie ...... Tue-B3-c3 Sakata, Toshiya ...... Thu-D1-c6 Sakdinawat, Anne ...... Thu-B1-c2 Sakurai, Hiroshi ...... Wed-C-p85 Salapatas, A ...... Wed-D2-c3 Salvi, Laurène ...... Wed-A-p71 Samà, Jordi ...... Tue-C1-c1; Wed-C-p1 Samiepour, Marjan ...... Tue-C-p72 Samusenko, Alina ...... Thu-D1-c9 Sanders, Rene Sanders ...... Wed-C-p31 Sandmaier, Julia ...... Tue-B-p26 Sanger, Kuldeep ...... Wed-D-p15 Sangiao, Soraya ...... Tue-S2-c5; Wed-B-p23 Sano, Mitsuo ...... Tue-D-p42 Santander, Joaquin...... Tue-C1-c1 Sari, Ibrahim ...... Tue-C1-c10 Sarro, Lina ...... Wed-C-p17; Wed-B8-c4

Sasaki, Ryunosuke ...... Wed-B-p35 Sasaki, Youichi ...... Wed-A1-c4 Sasano, Junji ...... Wed-A-p61 Satake, Shin-ichi ...... Wed-B-p39 Sato, Daiki ...... Wed-A-p15 Sato, Hironobu ...... Wed-A6-c4 Sato, Takaaki ...... Wed-C5-c10 Sato, Tatsuo ...... Tue-C-p80; Wed-C-p9 Sauter, Thilo ...... Tue-C-p2 Schalko, Johannes ...... Tue-C-p20; Tue-C-p2 Schäpers, Thomas ...... Wed-C5-c5 Scharin, Marina ...... Wed-B-p5; Wed-D-p23 Scheer, Hella-Christin ...... Tue-A-p30; Tue-A-p68; Tue-A5-c1; ...... Tue-C-p8 Schiffels, Daniel ...... Thu-D1-c8; Tue-B-p26 Schift, Helmut ...... Thu-B1-c3; Wed-C-p83; Tue-C-p84; ...... Thu-B1-c4; Wed-B-p29; Tue-B4-c5 Schirmer, Matthias ...... Tue-A-p4 Schlachter, Florian...... Tue-A-p20; Tue-A5-c2 Schleunitz, Arne ...... Tue-A-p26; Wed-A-p51; Tue-B4-c5 Schmid, Silvan ...... Wed-C-p39 Schmidt, Georg Johannes ...... Tue-A-p4 Schmidt, Hans-Werner ...... Thu-A4-c2 Schmidt, Marek ...... Thu-C1-inv Schmidt, Michael...... Tue-B-p14 Schmidt, Ronny ...... Tue-A-p4 Schmucker, Scott...... Thu-B1-c6 Schneider, Marc ...... Tue-B4-c3 Schneider, Norbert ...... Tue-B4-c3 Schoener, Adolf ...... Wed-C5-c9 Scholze, Petra ...... Tue-D-p26 Schrefl, Thomas ...... Wed-B-p11 Schulze, Andreas ...... Wed-B7-c2 Schurink, Bart ...... Wed-D3-c2 Schuster, Christine ...... Wed-A-p47 Schwartzberg, Adam ...... Wed-C-p53 Schwarz, Karin ...... Tue-D-p26 Schwarz, Sabine ...... Wed-B-p25 Scotti, Gianmario ...... Wed-D2-c1 Seghir, Rian ...... Thu-A4-c5 Seino, Yuriko ...... Wed-A6-c4 Seo, Manseung ...... Tue-B-p34 Seo, Yeong-Tai ...... Tue-C-p86 Seong, Woo Kyeong ...... Tue-C-p86 Sergo, Rudi ...... Tue-B-p36 Serra, Enrico ...... Wed-C-p17 Shabanian, Ardavan ...... Thu-C2-c4 Shalabaeava, Victoria ...... Tue-D-p16; Thu-D1-c10; Thu-D1-c1 Shamaev, Alexey ...... Tue-A-p66 Shao, Jinhai ...... Tue-A-p16; Tue-B-p8; Tue-B4-c6; ...... Wed-A-p9; Wed-A-p17 Shao-Chin , Tseng ...... Wed-D-p51 Sharma, Akhil ...... Tue-B-p4 Shawrav, Mostafa M...... Tue-B3-c2; Tue-B-p24; Tue-S2-c2; ...... Wed-B-p25 Shen, yan ...... Tue-C-p98 Shi, Dongxia ...... Tue-C-p66 Shi, jian ...... Tue-D-p38; Wed-D-p39 Shi, Xiaoqing ...... Wed-A-p49; Tue-A3-c5

Shibata, Takayuki ...... Tue-D-p2; Wed-A-p61 Shields, Philip ...... Wed-B-p15 Shikazono, Naoki ...... Wed-C-p27 Shimizu, Tomohiro ...... Wed-B-p53 Shin, Sukho ...... Tue-A-p2 Shingubara, Shoso ...... Wed-B-p53 Shkondin, Evgeniy ...... Wed-C-p59 Shoshi, Astrit ...... Wed-C3-c1 Shougee, Abdurrahman ...... Wed-C5-c7 Shuichiro, Nakata ...... Wed-B-p39 Sibarita, Jean-Baptiste ...... Wed-D-p9 Sierakowski, Andrzej ...... Wed-C-p23; Tue-B-p50; Wed-B-p47 Sikanen, Tiina ...... Tue-D-p20 Sileo, Leonardo ...... Wed-B-p41 SILMY, Kamel...... Wed-D-p43 Silvestri, Cinzia ...... Wed-B8-c4 Sim, Sung-min ...... Wed-C-p49 Simons, Hugh ...... Thu-B1-c5 Singer, Philipp ...... Tue-B-p42 Singh, Arjun ...... Tue-B-p20 Singh, Sanjleena ...... Tue-D-p50 Singh Petersen, R...... Thu-MEE-YIA Skotadis, Evangelos ...... Tue-D-p10 Slouka, Zdeněk ...... Tue-C-p30; Tue-C-p28 Smyrnakis, Athanasios...... Thu-B2-c3 Šnita, Dalimil ...... Tue-C-p30 So, Sunae ...... Wed-C3-inv Soh, Yong Chear ...... Wed-C-p29 Soin, Norhayati...... Wed-C-p63 Solak, Harun ...... Wed-A1-c3; Wed-A1-c2 Sole, Libertad ...... Tue-C1-c8 Sommer, Martin ...... Tue-C-p104 Son, Kyung Rock ...... Wed-C-p105; Tue-C-p100 Sonato, Agnese ...... Tue-D-p6 Sone, Hayato ...... Thu-D1-c6; Wed-A6-c2 Sone, Masato ...... Tue-C-p80; Wed-C-p21; Wed-C-p5; ...... Wed-B-p43; Wed-C-p81; Wed-C-p9; ...... Wed-C-p19; Tue-D-p42 Song, Junyeob ...... Wed-C-p43 Sotomayor Torres, Clivia ...... Tue-A-p24 Soulan, Sebastien ...... Wed-B-p45 Sovernigo, Enrico ...... Thu-B1-c3 Spagnolo, Barbara ...... Wed-B-p41 Spandet Havreland, Andreas ...... Wed-D2-c6 Spatz, Joachim ...... Wed-C-p99 Spieser, Martin ...... Wed-A7-c3 Spirin, Alexander ...... Wed-A-p69 Spizzo, Federico ...... Wed-C-p45 Srinivasan, Bharathi Madurai ...... Thu-A9-c2 Stahlberg, Henning ...... Tue-d6-c3 Stathopoulos, Vassilis ...... Wed-D4-c3 Steenwelle, Ruud ...... Thu-D1-c5 Steinberg, Chrisitan ...... Tue-A5-c1 Steinberg, Christian ...... Tue-A-p30; Tue-A-p68 Steiner, Harald ...... Tue-C-p2 Stelzle, Martin ...... Wed-D3-inv Stenbæk Schmidt, Michael ...... Tue-B-p16 Stöger-Pollach , Michael ...... Tue-B3-c2; Tue-S2-c2; Wed-B-p25 Stöhr, Frederik ...... Thu-B1-c5

Stormonth-Darling, John ...... Thu-A4-c3 Streltsov, Dmitry ...... Wed-A-p69 Striegel, Andreas ...... Tue-B4-c3 Strumbo, Giuseppe ...... Tue-D-p52; Wed-C-p95 Studer, Vincent ...... Wed-D-p9 Stumpf, Florian ...... Tue-B-p42 Su, Ping ...... Tue-C-p58 Su, Ting-Yu ...... Wed-D-p33 Su, Yarong ...... Wed-C3-c2; Wed-C-p37 Sulzbach, Thomas ...... Tue-C1-c5; Wed-C-p13 Sun, Chao ...... Tue-B-p40 SUN, Jian ...... Thu-C1-inv Sun, Kai ...... Tue-D5-c2; Wed-C-p73 Sun, Sangkyu ...... Wed-C-p97 Sun, Shiwen ...... Wed-D2-c2 Sun, Yan ...... Tue-B-p8 Suryana, Mona ...... Thu-D1-c4 Suzuki, Akira ...... Tue-A-p74 Svedlindh, Peter ...... Tue-B3-c2 Svetina, Cristian ...... Tue-B-p36 Swiderek, Petra ...... Tue-S2-c1 Syed, Atif ...... Wed-A-p75 Sylvest Keller , Stephan ...... Wed-A-p65 Szalai, Veronika ...... Tue-B-p26 Szkudlarek, Aleksandra ...... Tue-A-p12 Szumska, Anna ...... Wed-B-p47 Taguchi, Ryoga ...... Tue-C-p14 Tahara, Masaki ...... Wed-B-p43 Tahara, Yuma ...... Tue-D-p42 Taher, Ahmed ...... Wed-D2-c4 Takahashi, Junichi ...... Tue-A-p50 Takahashi, Junro ...... Tue-A-p74 Takahashi, Ken ...... Wed-A-p41; Tue-A-p38 Takayama, Osamu ...... Wed-C-p59 Takeda, Nao ...... Tue-C1-c6 Talneau, Anne ...... Wed-B-p31 Talukder, Santanu ...... Wed-A-p73 Tamiya, Mitsuru ...... Wed-A1-c4 Tamulevicius, Sigitas ...... Thu-B1-c4; Tue-C-p84 Tan, Shida...... Tue-A3-c4 Tanaka, Norihiro...... Wed-B-p53 Tanaka, Toshiki ...... Thu-A9-c4 Tang, Chengchun ...... Tue-C-p66; Wed-B-p17 Tang, M. T...... Tue-A-p64 TANG, Yadong ...... Tue-D-p28; Tue-D-p38; Tue-D-p48 TANG, yadong ...... Wed-D-p39 Taniguchi, Jun ...... Wed-A-p29; Tue-A-p28; Wed-A-p35; ...... Wed-A-p21; Wed-B-p39; Wed-A-p19 Taniguchi, Yusuke ...... Wed-A-p33 Tas, Niels ...... Thu-A9-inv Tasdemir, Zuhal ...... Tue-B-p48 Taus, Philipp ...... Wed-A-p43; Tue-B3-c2; Tue-S2-c2; ...... Wed-B-p25 Teranishi, Minami ...... Wed-C-p81 Teresa, Jose Maria de ...... Tue-S2-c5; Wed-B-p23 Tesfamichael, Tuquabo ...... Tue-D-p50 Thamdrup, Lasse ...... Tue-A-p24 Thayne, Iain ...... Tue-B-p12 Thesen, Manuel ...... Thu-A4-c1; Tue-A5-c2; Tue-A-p20

Thies, Jan-Wilhelm ...... Wed-D2-c5 Thilsted, Anil Haraksingh ...... Tue-B-p14 Thiry, Timothee ...... Tue-D6-c4 Thomas, Owain ...... Tue-D5-c2 Tiberio, Richard ...... Thu-B1-c2 Tiddi, William ...... Tue-A-p14 Tiefenauer, Raphael F ...... Thu-D1-c11 Tiggelaar, Roald ...... Wed-D3-c2 Tinku, Sajina ...... Tue-D5-c1 Tochigi, Eita ...... Wed-C5-c10 Tochino, Takamitsu ...... Tue-A-p36 Todaro, Maria Teresa ...... Thu-C1-c4 Tohmyoh, Hironori ...... Tue-C-p44 Tølbøl Sørensen, Kristian ...... Wed-D2-c6 Tomarchio, Flavia ...... Thu-C1-c7 Tomizawa, Hiroshi ...... Wed-C5-c6 Tommasi, Alessio ...... Tue-C1-c2 Tormen, Massimo ...... Thu-B1-c3; Tue-D-p6 Toshiyoshi, Hiroshi ...... Wed-C-p11; Wed-C-p81 Travagliati, Marco ...... Wed-C-p33 Trévisiol, Emmanuelle ...... Wed-D-p27; Thu-A4-c6 Trommer, Jens ...... Wed-C5-c3 Trompenaars, Piet ...... Tue-S2-c4 Tsekenis, Georgios ...... Tue-D-p10 Tseng, S. C...... Tue-A-p64 Tseng, Shih-Feng ...... Wed-B-p3; Tue-B-p6; Tue-D-p44 Tseng, Shih-Yu ...... Wed-D-p5 Tserepi, Angeliki ...... Tue-D-p18 Tsialla, Z ...... Wed-D2-c3 Tsou, Chialin ...... Tue-A-p16 Tsougeni, Katerina ...... Tue-D-p18 Tsoukalas, Dimitris ...... Tue-D-p10 Tsuchiya, Yoshishige ...... Tue-C1-c11; Wed-C-p47 Tu, Xiaolong ...... Tue-D-p48; Tue-D-p38; Wed-D-p39 Tu, Yung-Yi ...... Wed-D-p13 Tybrandt, Klas ...... Thu-D1-c11 Uchida, Tomoya ...... Wed-A-p21 Ueno, Ryohei ...... Wed-B-p1 Uhrmann, Thomas...... Wed-A-p37 Ullah, Asad ...... Wed-D4-c1 Unno, Noriyuki ...... Tue-A-p28; Wed-A-p19; Wed-A-p35; ...... Wed-B-p39 Unterauer, Barbara ...... Thu-C1-c7 Ussembayev, Yera ...... Wed-B-p13 Utke, Ivo ...... Tue-C-p90; Tue-A-p12; Tue-S2-c1 Valikhani, donya ...... Wed-D2-c2 vallejo-fernandez, Gonzalo ...... Tue-C-p72 Valpapuram, Immanuel ...... Wed-D-p1 Vamvakaki, Maria...... Tue-A5-c4 van Brakel, Remco ...... Thu-A4-c4; Tue-A-p42 van De Stolpe, A...... Wed-D3-c1 van der Donck, Jacques ...... Tue-B-p38 van der Drift, Emile ...... Thu-MNE-Fellow van der Schaft, hans ...... Wed-C-p31 van der Walle, Peter ...... Tue-B-p38 van Dorp, Willem ...... Tue-S2-c6; Wed-C5-c3 van Eemeren, johan ...... Wed-C-p31 van Kouwen, Leon ...... Tue-C1-c7 van Oene, Maarten M...... Wed-B-p13

van Roosbroeck, Ruben ...... Wed-D-p21; Tue-D-p24 van Rossum, Denise ...... Wed-D-p37 van Spengen, Merlijn ...... Tue-C1-c12; Wed-C-p79 van Tol, Ruud ...... Wed-C5-c11 van Veghel, Marijn ...... Tue-B-p46; Tue-S1-c5 van Veldhoven, Emile ...... Wed-B7-c1 van Velzen, N.J.C...... Tue-S2-c6 van Zanten, Thomas S...... Wed-A7-c1 Vandervorst, Wilfried ...... Wed-B7-c2 Vanko, Gabriel ...... Wed-C-p15 Vannahme, Christoph...... Wed-D2-c6 Vargas-Lara, Fernando ...... Thu-D1-c8; Tue-B-p26 Vartiainen,, Ismo ...... Wed-B-p29 VEGA, MILENA...... Tue-D-p34 Vega, Milena ...... Wed-B-p9 Vehkamäki, Marko ...... Tue-A-p6 Verduin, Thomas ...... Tue-B-p44; Tue-S2-c4; Wed-B-p21 Veres, Teodor ...... Wed-D-p29 verhoeckx, fred ...... Wed-C-p31 Verschuuren, Marc A...... Thu-A4-c4 Verschuuren, Marc A...... Tue-A-p42 Vervuurt, René ...... Tue-B-p4 Viasnoff, Virgile ...... Wed-D-p9 Vick, Andrew ...... Tue-C-p72 Vidor, Fábio F...... Wed-C-p91 Viefhues, Martina...... Wed-D2-c2 Vieu, Christophe ...... Wed-D-p27; Thu-A4-c6 Vilches, Sergio ...... Thu-C2-c4 Villa-Vargas, Luis A...... Wed-D-p7; Tue-D-p8 Villalvilla, José Moisés ...... Thu-D1-c12 Villani, Marco ...... Tue-D-p4 Virasawmy, Selven ...... Thu-B1-c2 Virganavicius, Dainius ...... Tue-C-p84; Thu-B1-c4 Vitali, David ...... Wed-C-p17 Vitis, Stefania ...... Tue-D-p52 Voglhuber, Thomas ...... Tue-A-p32 Voicu , Rodica ...... Wed-B-p7 Voigt, Anja ...... Wed-A-p47; Wed-A-p53 Volland, Burkhard ...... Wed-A7-c4 Vollebregt, Sten ...... Wed-B8-c4 VonMetzen, René...... Wed-D-p43 Voorkamp, Rob ...... Thu-A4-c4 Vörös, Janos ...... Thu-D1-c11 Vourdas, Nikolaos ...... Wed-D4-c3 Voutyras, Konstantinos ...... Tue-D-p10 Vrouwe, Elwin ...... Wed-D2-c2 Waaijman, T...... Wed-D3-c1 Wachter, Stefan ...... Tue-B3-c2 Wagner, Michael ...... Thu-C1-c7 Wagner, Stefan ...... Thu-C1-c5 Wahlbrink, Thorsten ...... Tue-A3-c1 Waid, Simon ...... Tue-B-p24 Wakamatsu, Ryuichi ...... Wed-A-p35 Wan, Dehui ...... Wed-D-p5; Tue-D6-c2 Wan Muhamad Hatta, Sharifah F...... Wed-C-p63 Wang, bin ...... Tue-D-p38; Tue-D-p48; Wed-D-p39 Wang, Chen ...... Wed-C5-c4 Wang, Cheng-Chuan ...... Wed-C-p21 Wang, Chien-Ping ...... Tue-C-p78

Wang, Chih-Wei ...... Wed-C-p101 Wang, Deqiang ...... Wed-A-p1 Wang, Fei ...... Wed-B-p49 Wang, Jian ...... Tue-C-p64 Wang, Jinhui ...... Wed-B-p33 Wang, Jung-Chang...... Tue-D-p44; Tue-D-p32 Wang, Li ...... Wed-A1-c3; Wed-A1-c2 Wang, Lina ...... Tue-D-p48 Wang, Qing ...... Tue-B-p2 Wang, Quandou ...... Tue-B-p18 Wang, Si ...... Tue-A5-c1; Tue-A-p68; Tue-A-p30 Wang, Sijiang ...... Tue-C-p38 Wang, Ying Min ...... Thu-A9-c2 Wang, Ying-Bin ...... Wed-D-p13 Wang, YuJin ...... Tue-C-p98 Wang, Zhenfeng ...... Wed-C-p29 Wanzenboeck, Heinz ...... Tue-B3-c2; Tue-B-p24; Tue-D-p26; ...... Tue-S2-c2; Wed-A-p43; Wed-B-p25 Watanabe, Mitsuhiro ...... Thu-B2-c2 Weber, Anja ...... Wed-B-p11 Weber, Walter ...... Wed-C5-c3 Wei, Jin ...... Tue-D-p38; Tue-D-p48; Wed-D-p39 Weichart, Johannes ...... Wed-B8-c3 Weigel, Christoph ...... Tue-C-p40 Weigl, Eva ...... Tue-A-p32 Weisenstein, Christian ...... Thu-C1-c5 Weppelman, Gerward ...... Wed-C5-c11; Wed-C-p57 Wiedenmann, Jonas ...... Tue-A-p56 Wiegerink, Remco ...... Wed-C-p25; Thu-D1-c5; Tue-C-p42 Wirth, Gilson I...... Wed-C-p91 Woias, Peter ...... Thu-C2-c4 Woittequand, Jason ...... Tue-D-p40 Wolf, Heiko ...... Wed-A7-c3 Wollenweber, Marcus ...... Wed-A-p37 Wood, David ...... Thu-A9-c1 Wood, Graham ...... Tue-C1-c10 Wooldridge, Jenny ...... Tue-C-p36 Worgull, Matthias ...... Tue-B4-c3 Wu, Kaiyu ...... Tue-B-p14 Wu, Tung-Yu ...... Wed-C-p89 Xia, Liangping ...... Tue-C-p38; Wed-A-p1 Xia, Qiangfei ...... Wed-C5-c2 Xie, Chengzhi ...... Tue-B-p12 Xie, Duan ...... Wed-C3-c2 Xie, Han-Xuan ...... Wed-C-p101 Xie, Sijia ...... Tue-D-p22 Xiong, Xin ...... Wed-A-p1 Xu, Chen ...... Tue-B4-c6 Xu, Yuan Hao ...... Tue-D6-c1 Xu, Zheng ...... Wed-B7-c2 Yajima, Yuki ...... Tue-A-p38 Yamada, Shuhei ...... Wed-C-p27 Yamaguchi, Hiroshi ...... Tue-C-p92 Yamaguchi, Tomohiro ...... Wed-C5-c6 Yamamoto, Kota ...... Wed-A-p61 Yamanaka , Takuya ...... Wed-B7-c1 Yamane, Daisuke ...... Wed-C-p11; Wed-C-p5; Wed-C-p19; ...... Wed-C-p81 Yamazaki, Minoru ...... Wed-B-p37

Yanagida, Sari ...... Wed-C-p9 Yang, Dongxu ...... Tue-A-p52 Yang, Haifang ...... Wed-B-p17; Tue-C-p66; Tue-C-p98 Yang, Hui ...... Wed-A-p57 Yang, Joel ...... Thu-A9-c2 Yang, Sanghyeok ...... Tue-C-p6 Yang, Seunggen ...... Tue-C-p70 Yasuda, Masaaki ...... Thu-A9-c4; Tue-A-p36 Yasuda, Takahisa ...... Wed-B-p43 Ye, Sheng ...... Wed-C-p47 Yen, Chia-Ying ...... Wed-C-p21 Yi, Shang-Yi ...... Tue-D6-c2; Wed-D-p5 Yin, G. C...... Tue-A-p64 Yin, Hongxin ...... Tue-C-p98 Yin, You ...... Tue-C-p88; Tue-C-p74; Wed-A6-c2 Ying, Shang-Ping ...... Tue-C-p78 Yli-Kauhaluoma, Jari ...... Wed-D2-c1 Yokoyama, Shin ...... Wed-C-p85 Yoo, Ilseon...... Tue-C-p6; Wed-C-p103 Gwanho Yoon ...... Wed-C3-inv Yoon, Tae-Sik ...... Tue-C-p76 Yoshiba, Masaharu ...... Wed-C-p19 Yoshiba, Masaharu ...... Wed-C-p5 Yoshizawa, Satoko ...... Tue-D-p46 Yu, Feng ...... Wed-A-p21 Yu, Yang ...... Wed-C-p33 Yvesa, Petronil ...... Wed-D-p55 Zaglmayr, Harald ...... Wed-A-p37 Zajadacz, Joachim...... Tue-C-p8 zanchetta, erika ...... Tue-D-p36 Zangrando, Marco ...... Tue-B-p36 Zanut, Alessandra ...... Tue-D-p6 Zappettini, Andrea ...... Tue-D-p4; Tue-C1-c2 Zehetner, Johann ...... Wed-C-p15 Zeimpekis, Ioannis ...... Tue-D5-c2 Zeitner, Uwe D...... Tue-A3-c6 Zellekens, Patrick ...... Wed-C5-c5 Zelsmann, Marc...... Tue-D6-c4 Zengerle, Roland ...... Wed-Keynote-4 Zeniou, Angelos ...... Thu-B2-c3 Zenkevich, Andrei ...... Tue-C-p52 Zergioti, Ioanna ...... Tue-D-p10 Zhang, Dong ...... Wed-A-p1 Zhang, Hui ...... Wed-A6-c2 Zhang, Huizhen ...... Wed-B-p17; Tue-C-p66 zhang, Lan ...... Tue-C-p60 Zhang, Liping ...... Thu-B2-c4 Zhang, Rui ...... Tue-B-p2 Zhang, Sichao ...... Tue-B4-c6; Tue-B-p8; Wed-A-p17; ...... Tue-B3-c1; Tue-A-p16 Zhang, Weiguo ...... Wed-A-p1 Zhang, Yong Wei ...... Thu-A9-c2 Zhang, Yucheng ...... Tue-A-p12; Tue-C-p90 Zhang, Yunshun ...... Tue-C-p68 Zhang, Zhijun ...... Tue-D-p48 Zhao, Chun ...... Tue-C1-c10 Zhao, Gang ...... Tue-C-p4 zhao, Jing ...... Tue-C-p66 Zhao, Xinwei ...... Tue-A-p74

Zheng, Rencheng ...... Tue-C-p68 Zheng, Xu ...... Tue-B-p2 Zhikharev, Eugene ...... Wed-A-p69 Zhou, Shu Fan...... Tue-D6-c1 Zhu, Chuanrui ...... Tue-C-p98 Zhu, Guodong ...... Wed-A-p1 Zhu, Jianhua ...... Wed-C-p35 ; Wed-C-p37 ; Wed-C3-c2 Zhu, Wulin ...... Tue-C-p4 Zhukovski, Sergei ...... Wed-C-p59 Zilio, Pierfrancesco ...... Wed-C-p51 Zimmer, Cordula ...... Tue-C-p16 Zimmer, Klaus ...... Tue-C-p8 Zimmermann, Samuel ...... Tue-A-p62 Zoerb, Markus ...... Tue-B3-inv Zschech, Ehrenfried ...... Wed-C5-c3

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