A Beginners Guide to Effects Pedals Components
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Introduction What Is a Polymer Capacitor?
ECAS series (polymer-type aluminum electrolytic capacitor) No. C2T2CPS-063 Introduction If you take a look at the main board of an electronic device such as a personal computer, you’re likely to see some of the six types of capacitors shown below (Fig. 1). Common types of capacitors include tantalum electrolytic capacitors (MnO2 type and polymer type), aluminum electrolytic capacitors (electrolyte can type, polymer can type, and chip type), and MLCC. Figure 1. Main Types of Capacitors What Is a Polymer Capacitor? There are many other types of capacitors, such as film capacitors and niobium capacitors, but here we will describe polymer capacitors, a type of capacitor produced by Murata among others. In both tantalum electrolytic capacitors and aluminum electrolytic capacitors, a polymer capacitor is a type of electrolytic capacitor in which a conductive polymer is used as the cathode. In a polymer-type aluminum electrolytic capacitor, the anode is made of aluminum foil and the cathode is made of a conductive polymer. In a polymer-type tantalum electrolytic capacitor, the anode is made of the metal tantalum and the cathode is made of a conductive polymer. Figure 2 shows an example of this structure. Figure 2. Example of Structure of Conductive Polymer Aluminum Capacitor In conventional electrolytic capacitors, an electrolyte (electrolytic solution) or manganese dioxide (MnO2) was used as the cathode. Using a conductive polymer instead provides many advantages, making it possible to achieve a lower equivalent series resistance (ESR), more stable thermal characteristics, improved safety, and longer service life. As can be seen in Fig. 1, polymer capacitors have lower ESR than conventional electrolytic Copyright © muRata Manufacturing Co., Ltd. -
Capacitors and Inductors
DC Principles Study Unit Capacitors and Inductors By Robert Cecci In this text, you’ll learn about how capacitors and inductors operate in DC circuits. As an industrial electrician or elec- tronics technician, you’ll be likely to encounter capacitors and inductors in your everyday work. Capacitors and induc- tors are used in many types of industrial power supplies, Preview Preview motor drive systems, and on most industrial electronics printed circuit boards. When you complete this study unit, you’ll be able to • Explain how a capacitor holds a charge • Describe common types of capacitors • Identify capacitor ratings • Calculate the total capacitance of a circuit containing capacitors connected in series or in parallel • Calculate the time constant of a resistance-capacitance (RC) circuit • Explain how inductors are constructed and describe their rating system • Describe how an inductor can regulate the flow of cur- rent in a DC circuit • Calculate the total inductance of a circuit containing inductors connected in series or parallel • Calculate the time constant of a resistance-inductance (RL) circuit Electronics Workbench is a registered trademark, property of Interactive Image Technologies Ltd. and used with permission. You’ll see the symbol shown above at several locations throughout this study unit. This symbol is the logo of Electronics Workbench, a computer-simulated electronics laboratory. The appearance of this symbol in the text mar- gin signals that there’s an Electronics Workbench lab experiment associated with that section of the text. If your program includes Elec tronics Workbench as a part of your iii learning experience, you’ll receive an experiment lab book that describes your Electronics Workbench assignments. -
100“ 168\A166\1::: 1:1 162 { 164C 1
US 20060180895Al (19) United States (12) Patent Application Publication (10) Pub. No.: US 2006/0180895 A1 Chen et al. (43) Pub. Date: Aug. 17, 2006 (54) CAPACITOR DEVICE WITH VERTICALLY (21) Appl. No.: 11/055,933 ARRANGED CAPACITOR REGIONS OF VARIOUS KINDS (22) Filed: Feb. 11, 2005 (75) Inventors: Yueh-You Chen, Hsin-Chu City (TW); Publication Classi?cation Chung-Long Chang, Dou-Liu city (TW); Chih-Ping Chao, Chu-Dong (51) Int. Cl. Town (TW); Chun-Hong Chen, Jhubei H01L 29/93 (2006.01) City (TW) (52) U.S. Cl. .......................................... .. 257/595; 257/E2l Correspondence Address: (57) ABSTRACT DUANE MORRIS, LLP IP DEPARTMENT A capacitor device selectively combines MOM, MIM and 30 SOUTH 17TH STREET varactor regions in the same layout area of an IC. TWo or PHILADELPHIA, PA 19103-4196 (US) more types of capacitor regions arranged vertically on a substrate to form the capacitor device. This increase the (73) Assignee: Taiwan Semiconductor Manufacturing capacitance per unit of the capacitor device, Without occu Company, Ltd. pying an extra layout area. 100“ 168\A166\1::: 1:1 162 { 164C 1:: . 160 158, F I /_\~ ’/'_‘\ 130 Bi- - + - +--E6_,154 /\_ A/A\ 128 i. - + - +--?, 152 122 ' 134 . ,/—\ 142 126 \_/—'—~ . + .. +_-\_, 150 /\'_ ‘/_\ 4 124 i. + - +--—2, 148 120% 118/1- ] 116f 108 112 112 104 10s \ p — /_/ 106 _ m _ 114 l_/114 110 Patent Application Publication Aug. 17, 2006 Sheet 2 0f 2 US 2006/0180895 A1 200“ - + - + + - + - - + - + + - + - FIG. 2 300% 316% + ' + 314“ 312% + + 310v“ ' 308 “w - + - + 306\___ 304“ + + FIG. 3 US 2006/0180895 A1 Aug. -
AN826 Crystal Oscillator Basics and Crystal Selection for Rfpic™ And
AN826 Crystal Oscillator Basics and Crystal Selection for rfPICTM and PICmicro® Devices • What temperature stability is needed? Author: Steven Bible Microchip Technology Inc. • What temperature range will be required? • Which enclosure (holder) do you desire? INTRODUCTION • What load capacitance (CL) do you require? • What shunt capacitance (C ) do you require? Oscillators are an important component of radio fre- 0 quency (RF) and digital devices. Today, product design • Is pullability required? engineers often do not find themselves designing oscil- • What motional capacitance (C1) do you require? lators because the oscillator circuitry is provided on the • What Equivalent Series Resistance (ESR) is device. However, the circuitry is not complete. Selec- required? tion of the crystal and external capacitors have been • What drive level is required? left to the product design engineer. If the incorrect crys- To the uninitiated, these are overwhelming questions. tal and external capacitors are selected, it can lead to a What effect do these specifications have on the opera- product that does not operate properly, fails prema- tion of the oscillator? What do they mean? It becomes turely, or will not operate over the intended temperature apparent to the product design engineer that the only range. For product success it is important that the way to answer these questions is to understand how an designer understand how an oscillator operates in oscillator works. order to select the correct crystal. This Application Note will not make you into an oscilla- Selection of a crystal appears deceivingly simple. Take tor designer. It will only explain the operation of an for example the case of a microcontroller. -
Capacitor & Capacitance
CAPACITOR & CAPACITANCE - TYPES Capacitor types Listed by di-electric material. A 12 pF 20 kV fixed vacuum capacitor Vacuum : Two metal, usually copper, electrodes are separated by a vacuum. The insulating envelope is usually glass or ceramic. Typically of low capacitance - 10 - 1000 pF and high voltage, up to tens of kilovolts, they are most often used in radio transmitters and other high voltage power devices. Both fixed and variable types are available. Vacuum variable capacitors can have a minimum to maximum capacitance ratio of up to 100, allowing any tuned circuit to cover a full decade of frequency. Vacuum is the most perfect of dielectrics with a zero loss tangent. This allows very high powers to be transmitted without significant loss and consequent heating. Air : Air dielectric capacitors consist of metal plates separated by an air gap. The metal plates, of which there may be many interleaved, are most often made of aluminium or silver-plated brass. Nearly all air dielectric capacitors are variable and are used in radio tuning circuits. Metallized plastic film: Made from high quality polymer film (usually polycarbonate, polystyrene, polypropylene, polyester (Mylar), and for high quality capacitors polysulfone), and metal foil or a layer of metal deposited on surface. They have good quality and stability, and are suitable for timer circuits. Suitable for high frequencies. Mica: Similar to metal film. Often high voltage. Suitable for high frequencies. Expensive. Excellent tolerance. Paper: Used for relatively high voltages. Now obsolete. Glass: Used for high voltages. Expensive. Stable temperature coefficient in a wide range of temperatures. Ceramic: Chips of alternating layers of metal and ceramic. -
3. PPE Materials Components and Devices 2019 USPAS
Pulsed Power Engineering: Materials & Passive Components and Devices U.S. Particle Accelerator School University of New Mexico Craig Burkhart & Mark Kemp SLAC National Accelerator Laboratory June 24-28, 2019 Materials & Passive Components and Devices Used in Pulsed Power Engineering - Materials • Conductors • Insulators • Magnetic material - Passive components and devices • Resistors • Capacitors • Inductors • Transformers • Transmission lines • Loads - Klystrons - Beam kickers Jun. 24-28, 2019 USPAS Pulsed Power Engineering C. Burkhart & M. Kemp 2 Materials - Generally encounter three types of materials in pulsed power work • Conductors - Wires & cable - Buss bars - Shielding - Resistors • Insulators - Cables and bushing - Standoffs - Capacitors • Magnetic - Inductors, transformers, and magnetic switches - Ferrite and tape-wound Jun. 24-28, 2019 USPAS Pulsed Power Engineering C. Burkhart & M. Kemp 3 Calculating Resistance - At low frequency, resistance (R) determined by: • R = ρℓ/A (ohm) - Material resistivity, ρ (Ω•cm) - Conductor length, ℓ (cm) - Conductor cross-sectional area, A (cm2) - At high frequency, effective conductor area decreased by “skin effect” • Conducted current produces magnetic field • Magnetic field induces eddy currents in conductor which oppose/cancel B • Eddy currents decay due to material resistance, allow conducted current/magnetic field to penetrate material • Skin depth, δ, is the effective conducted current penetration (B = Bapplied/e) • δ = (2ρ/μω)½ (meters) for a current of a fixed frequency ω=2πf, or δ ≈ (2tρ/μ)½ (meters) for a pulsed current of duration t (sec) - Material resistivity, ρ (Ω•m) - Material permeability, μ (H/m) ½ ½ • δ = (6.6/f )[(ρ/ρc)/(μ/μo)] (cm) -8 - Normalized resistivity, (ρ/ρc) , copper resistivity, ρc = 1.7 X 10 (Ω•m) -7 - Relative permeability, μr =(μ/μo), permeability of free space, μo = 4π X 10 (H/m) • Litz wire is woven to minimize skin effects Jun. -
MT-101: Decoupling Techniques
MT-101 TUTORIAL Decoupling Techniques WHAT IS PROPER DECOUPLING AND WHY IS IT NECESSARY? Most ICs suffer performance degradation of some type if there is ripple and/or noise on the power supply pins. A digital IC will incur a reduction in its noise margin and a possible increase in clock jitter. For high performance digital ICs, such as microprocessors and FPGAs, the specified tolerance on the supply (±5%, for example) includes the sum of the dc error, ripple, and noise. The digital device will meet specifications if this voltage remains within the tolerance. The traditional way to specify the sensitivity of an analog IC to power supply variations is the power supply rejection ratio (PSRR). For an amplifier, PSRR is the ratio of the change in output voltage to the change in power supply voltage, expressed as a ratio (PSRR) or in dB (PSR). PSRR can be referred to the output (RTO) or referred to the input (RTI). The RTI value is equal to the RTO value divided by the gain of the amplifier. Figure 1 shows how the PSR of a typical high performance amplifier (AD8099) degrades with frequency at approximately 6 dB/octave (20 dB/decade). Curves are shown for both the positive and negative supply. Although 90 dB at dc, the PSR drops rapidly at higher frequencies where more and more unwanted energy on the power line will couple to the output directly. Therefore, it is necessary to keep this high frequency energy from entering the chip in the first place. This is generally done with a combination of electrolytic capacitors (for low frequency decoupling), ceramic capacitors (for high frequency decoupling), and possibly ferrite beads. -
MSCSICMDD/REF1 Application Note 1824 Dual Sic MOSFET Driver Reference Design 10/2016
MSCSICMDD/REF1 Application Note 1824 Dual SiC MOSFET Driver Reference Design 10/2016 Dual SiC MOSFET Driver Reference Design Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer’s Microsemi Corporate Headquarters responsibility to independently determine suitability of any products and to test and verify the same. The information One Enterprise, Aliso Viejo, provided by Microsemi hereunder is provided “as is, where is” and with all faults, and the entire risk associated with such CA 92656 USA information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, Within the USA: +1 (800) 713-4113 licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Outside the USA: +1 (949) 380-6100 Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any Fax: +1 (949) 215-4996 changes to the information in this document or to any products and services at any time without notice. -
EURO QUARTZ TECHNICAL NOTES Crystal Theory Page 1 of 8
EURO QUARTZ TECHNICAL NOTES Crystal Theory Page 1 of 8 Introduction The Crystal Equivalent Circuit If you are an engineer mainly working with digital devices these notes In the crystal equivalent circuit above, L1, C1 and R1 are the crystal should reacquaint you with a little analogue theory. The treatment is motional parameters and C0 is the capacitance between the crystal non-mathematical, concentrating on practical aspects of circuit design. electrodes, together with capacitances due to its mounting and lead- out arrangement. The current flowing into a load at B as a result of a Various oscillator designs are illustrated that with a little constant-voltage source of variable frequency applied at A is plotted experimentation may be easily modified to suit your requirements. If below. you prefer a more ‘in-depth’ treatment of the subject, the appendix contains formulae and a list of further reading. At low frequencies, the impedance of the motional arm of the crystal is extremely high and current rises with increasing frequency due solely to Series or Parallel? the decreasing reactance of C0. A frequency fr is reached where L1 is resonant with C1, and at which the current rises dramatically, being It can often be confusing as to whether a particular circuit arrangement limited only by RL and crystal motional resistance R1 in series. At only requires a parallel or series resonant crystal. To help clarify this point, it slightly higher frequencies the motional arm exhibits an increasing net is useful to consider both the crystal equivalent circuit and the method inductive reactance, which resonates with C0 at fa, causing the current by which crystal manufacturers calibrate crystal products. -
Wei Thesis.Pdf
UNIVERSITY OF CALIFORNIA Santa Barbara Wide Bandwidth Power Heterojunction Bipolar Transistors and Amplifiers A Dissertation submitted in partial satisfaction of the requirements for the degree Doctor of Philosophy in Electrical and Computer Engineering by Yun Wei Committee in charge: Professor Mark Rodwell, Chair Professor Steve Long Professor Umesh Mishra Professor Robert York March, 2003 The dissertation of Yun Wei is approved. _____________________________________________ Professor Steve Long _____________________________________________ Professor Umesh Mishra _____________________________________________ Professor Robert York _____________________________________________ Professor Mark Rodwell, Committee Chair November, 2002 ii Wide Bandwidth Power Heterojunction Bipolar Transistors and Amplifiers Copyright © 2003 by Yun Wei iii To my wife and daughter. iv ACKNOWLEDGEMENTS I would like to say that I feel lucky of being a student of Prof. Rodwell. I am always indebted to him for his advice and assistance during my graduate school career. I have learned not only the knowledge, but also gained a lot from his enthusiasm for scientific research and willingness to help others. I would also like to thank my committee members Prof. Umesh Mishra, Prof. Stephen Long and Prof. Robert York for their patience, encouragement and support. It was my greatest pleasure of working with my colleagues, who gave me both helps and friendliness. Thanks to Dino, James, Shri, Tomas and PK, who gave me the first laboratory training. Special thanks to Paidi, Miguel and Dennis; this thesis would not have been possible without their contributions. Also thanks to Sangmin, Zach, Shouxuan, Mattias, and Navin for their suggestions and support during this work. The excellent support received from Jack Whaley, Mike Anzlowar, Bob Hill, and Neil Baker led to the successful fabrication of the devices and MMICs described in this work. -
Reliability Information Analysis Center (RIAC) Electronic Parts Reliability Data (EPRD) Part Category Descriptors
Reliability Information Analysis Center (RIAC) Electronic Parts Reliability Data (EPRD) Part Category Descriptors The following pages contain the descriptors of all part categories covered by the 4-Volume RIAC Publication “Electronic Parts Reliability Data”, Catalog No. EPRD-2014. -
General Technical Information Vishay Roederstein Film Capacitors
General Technical Information www.vishay.com Vishay Roederstein Film Capacitors FILM CAPACITORS RFI suppression capacitors are the most effective way to Plastic film capacitors are generally subdivided into film/foil reduce RF energy interference. As its impedance decrease capacitors and metalized film capacitors. with frequency, it acts as a short-circuit for high-frequencies between the mains terminals and/or between the mains FILM / FOIL CAPACITORS terminals and the ground. Film / foil capacitors basically consist of two metal foil Capacitors for applications between the mains terminals are electrodes that are separated by an insulating plastic film called X Class capacitors. Capacitors for applications also called dielectric. The terminals are connected to the between the terminals and the ground are called Y Class end-faces of the electrodes by means of welding or capacitors. soldering. X-Capacitors Main features: For the suppression of symmetrical interference voltage. High insulation resistance, excellent current carrying and Capacitors with unlimited capacitance for use where their pulse handling capability and a good capacitance stability. failure will not lead to the danger of electrical shock on human beings and animals. The capacitor must present a METALIZED FILM CAPACITORS safe end of life behavior. The electrodes of metalized film capacitors consist of an Y-Capacitors extremely thin metal layer (0.02 μm to 0.1 μm) that is vacuum Capacitors for suppression of asymmetrical interference deposited either onto the dielectric film or onto a carrier film. voltage, and are located between a live wire and a metal The opposing and extended metalized film layers of the case which may be touched.