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BE230 MIC5014 May05 MIC5014/5015 Micrel, Inc. MIC5014/5015 Low-Cost High- or Low-Side MOSFET Driver General Description Features MIC5014 and MIC5015 MOSFET drivers are designed for • 2.75V to 30V operation gate control of N-channel, enhancement-mode, power • 100µA maximum supply current (5V supply) MOSFETs used as high-side or low-side switches. •15µA typical off-state current The MIC5014/5 can sustain an on-state output indefinitely. • Internal charge pump The MIC5014/5 operates from a 2.75V to 30V supply. In high- • TTL compatible input side configurations, the driver can control MOSFETs that •Withstands 60V transient (load dump) switch loads of up to 30V. In low-side configurations, with •Reverse battery protected to –20V separate supplies, the maximum switched voltage is limited • Inductive spike protected to –20V only by the MOSFET. •Overvoltage shutdown at 35V • Internal 15V gate protection The MIC5014/5 has a TTL compatible control input. •Minimum external parts The MIC5014 is noninverting while the MIC5015 is inverting. •Operates in high-side or low-side configurations The MIC5014/5 features an internal charge pump that can •1µA control input pull-off sustain a gate voltage greater than the available supply • Inverting and noninverting versions voltage. The driver is capable of turning on a logic-level MOSFET from a 2.75V supply or a standard MOSFET from a 5V supply. The gate-to-source output voltage is internally Applications limited to approximately 15V. •Automotive electrical load control The MIC5014/5 is protected against automotive load dump, •Battery-powered computer power management reversed battery, and inductive load spikes of –20V. • Lamp control The driver’s overvoltage shutdown feature turns off the exter- •Heater control nal MOSFET at approximately 35V to protect the load against •Motor control power supply excursions. •Power bus switching The MIC5014 is an improved pin-for-pin compatible replace- ment in many MIC5011 applications. The MIC5014/5 is available in plastic 8-pin DIP and 8-pin SOIC pacakges. Typical Application +3V to +4V 10µF MIC5014 1 8 V+ NC Control Input 2 7 ON Input NC OFF 3 6 Source NC 4 5 Gnd Gate IRLZ24 Load Figure 1. 3V “Sleep-Mode” Switch with a Logic-Level MOSFET Micrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com June 2005 1 MIC5014/5015 MIC5014/5015 Micrel, Inc. Ordering Information Part Number Temperature Standard Pb-Free Range Configuration Package MIC5014BM MIC5014YM –40ºC to +85ºC Non-Inverting 8-Pin SOIC MIC5014BN MIC5014YN –40ºC to +85ºC Non-Inverting 8-Pin PDIP MIC5015BM MIC5015YM –40ºC to +85ºC Inverting 8-Pin SOIC MIC5015BN MIC5015YN –40ºC to +85ºC Inverting 8-Pin PDIP Block Diagram V+ (1) Charge Pump Gate (5) 15V Source (3) Input (2) * * Only on the inverting version Ground (4) Pin Description Pin Number Pin Name Pin Function 1V+Supply. Must be decoupled to isolate from large transients caused by the power MOSFET drain. 10µF is recommended close to pins 1 and 4. 2 Input Turns on power MOSFET when taken above (or below) threshold (1.0V typical). Pin 2 requires ~ 1µA to switch. 3 Source Connects to source lead of power MOSFET and is the return for the gate clamp zener. Pin 3 can safely swing to –20V when turning off inductive loads. 4 Ground 5 Gate Drives and clamps the gate of the power MOSFET. 6, 7, 8 NC Not internally connected. MIC5014/5015 2 June 2005 MIC5014/5015 Micrel, Inc. Absolute Maximum Ratings (Notes 1,2) Operating Ratings (Notes 1,2) Supply Voltage ............................................... –20V to 60V θJA (Plastic DIP) ..................................................... 160°C/W + Input Voltage .....................................................–20V to V θJA (SOIC) ............................................................. 170°C/W Source Voltage..................................................–20V to V+ Ambient Temperature: ................................ –40°C to +85°C Source Current .......................................................... 50mA Storage Temperature ................................ –65°C to +150°C Gate Voltage .................................................. –20V to 50V Lead Temperature...................................................... 260°C Junction Temperature .............................................. 150°C (max soldering time: 10 seconds) Supply Voltage (V+) ......................................... 2.75V to 30V Electrical Characteristics (Note 3) TA = –40°C to +85°C unless otherwise specified Parameter Conditions Min Typ Max Units + Supply Current V = 30V VIN De-Asserted (Note 5) 10 25 µA VIN Asserted (Note 5) 5.0 10 mA V+ = 5V V De-Asserted 10 25 IN µA VIN Asserted 60 100 V+ = 3V V De-Asserted 10 25 IN µA VIN Asserted 25 35 Logic Input Voltage Threshold 3.0V ≤ V+ ≤ 30V Digital Low Level 0.8 V VIN TA = 25°CDigital High Level 2.0 Logic Input Current 3.0V V+ 30V V Low –2.0 0 ≤ ≤ IN µA MIC5014 (non-inverting) VIN High 1.0 2.0 Logic Input Current 3.0V V+ 30V V Low –2.0 –1.0 ≤ ≤ IN µA MIC5015 (inverting) VIN High –1.0 2.0 Input Capacitance 5.0 pF + Gate Enhancement 3.0V ≤ V ≤ 30V VIN Asserted 4.0 17 V VGATE – VSUPPLY + Zener Clamp 8.0V ≤ V ≤ 30V VIN Asserted 13 15 17 V VGATE – VSOURCE + Gate Turn-on Time, tON V = 4.5V VIN switched on, measure 2.5 8.0 ms + (Note 4) CL = 1000pF time for VGATE to reach V + 4V V+ = 12V As above, measure time for 90 140 µs + CL = 1000pF VGATE to reach V + 4V + Gate Turn-off Time, tOFF V = 4.5V VIN switched off, measure 6.0 30 µs (Note 4) CL = 1000pF time for VGATE to reach 1V V+ = 12V As above, measure time for 6.0 30 µs CL = 1000pF VGATE to reach 1V Overvoltage Shutdown 35 37 41 V Threshold Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device beyond its specified Operating Ratings. Note 2: The MIC5014/5015 is ESD sensitive. Note 3: Minimum and maximum Electrical Characteristics are 100% tested at TA = 25°C and TA = 85°C, and 100% guaranteed over the entire operating temperature range. Typicals are characterized at 25°C and represent the most likely parametric norm. Note 4: Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster—see Applications Information. Note 5: “Asserted” refers to a logic high on the MIC5014 and a logic low on the MIC5015. June 2005 3 MIC5014/5015 MIC5014/5015 Micrel, Inc. Typical Characteristics All data measured using FET probe to minimize resistive loading Supply Current Gate Enhancement High-Side Turn-On Time (Output Asserted) vs. Supply Voltage vs. Gate Capacitance 6 20 300 5 250 s) 15 µ 4 200 3 10 150 2 100 5 1 Gate Enhancement = TURN-ON TIME ( 50 SUPPLY CURRENT (mA) GATE ENHANCEMENT (V) Supply = 12V VGATE – VSUPPLY 0 0 0 051015 20 25 30 051015 20 25 30 0246810 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) GATE CAPACITANCE (nF) High-Side Turn-On Time High-Side Turn-On Time High-Side Turn-On Time Until Gate = Supply + 4V Until Gate = Supply + 4V vs. Temperature 100 100 180 s) µ 160 C = 1300pF C = 3000pF 10 GATE 10 GATE 140 120 100 1 1 80 Supply = 12V 60 CGATE = 1000pF 0.1 0.1 40 TURN-ON TIME (ms) TURN-ON TIME (ms) 20 0.01 0.01 HIGH-SIDE TURN-ON TIME ( 0 0481216 20 24 28 0481216202428 -60 -30 0 30 60 90 120 150 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (°C) High-Side Turn-On Time High-Side Turn-On Time High-Side Turn-Off Time Until Gate = Supply + 10V Until Gate = Supply + 10V Until Gate = 1V 100 100 10 C = 1300pF C = 3000pF GATE GATE s) 8 10 10 µ 6 1 1 CGATE = 3000pF 4 0.1 0.1 TURN-ON TIME (ms) TURN-ON TIME (ms) TURN-OFF TIME ( 2 CGATE = 1300pF 0.01 0.01 0 051015 20 25 30 051015 20 25 30 051015 20 25 30 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) Charge-Pump Charge-Pump Low-Side Turn-On Time Output Current Output Current Until Gate = 4V 1000 10000 10000 28V 28V C = 3000pF A) A) GATE µ µ 1000 12V s) 1000 µ 100 12V Source connected to ground: supply 100 voltage as noted 100 10 5V Source connected 5V CGATE = 1300pF 3V 10 3V 10 to supply: supply TURN-ON TIME ( OUTPUT CURRENT ( OUTPUT CURRENT ( voltage as noted 1 1 1 051015 051015 051015 20 25 30 GATE-TO-SOURCE VOLTAGE (V) GATE-TO-SOURCE VOLTAGE (V) SUPPLY VOLTAGE (V) MIC5014/5015 4 June 2005 MIC5014/5015 Micrel, Inc. Applications Information not use a socket for the MOSFET. If the MOSFET is a TO-220 Functional Description type package, make high current connections to the drain tab. Wiring losses have a profound effect on high-current circuits. The MIC5014 is functionally and pin for pin compatible with A floating milliohmeter can identify connections that are con- the MIC5011, except for the omission of the optional speed- tributing excess drop under load. up capacitor pins, which are available on the MIC5011. The MIC5015 is an inverting configuration of the MIC5014. Low Voltage Testing As the MIC5014/MIC5015 have relatively high output imped- The internal functions of these devices are controlled via a ances, a normal oscilloscope probe will load the device. This logic block (refer to block diagram) connected to the control is especially pronounced at low voltage operation. It is recom- input (pin 2). When the input is off (low for the MIC5014, and mended that a FET probe or unity gain buffer be used for all high for the MIC5015), all functions are turned off, and the testing. gate of the external power MOSFET is held low via two N- channel switches.
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