arXiv:1707.02465v2 [cond-mat.mes-hall] 28 Jun 2018 ri opig(O)adaszbegpo 1 spin- of Its gap large sizable a recently. relatively and (SOC) 7] a coupling [6, orbit sur- supports the- experimentally metal structure both and on low-buckled attention 5] extensive synthesized [4, attracted been oretically and has [1–3] faces atoms, silicon of eae hsc nTD,sc sMoS phase as Berry such and TMDs, valley in spin, physics of related dichalcogenides interplay metal The transition (TMDs). SOC with the compared However, weak valleytronics. is for candidate a be icene 17], ef- 19]. [16, [18, valley-Hall effect coupling Hall and valley-spin anomalous spin- quantum the the [13–15], as fects such of studies effects, silicene many interesting of motivates compatibility technology elec- The silicon-based the with [10–12]. as increases transition field phase field, tric topological electric can a silicene perpendicular of inducing a gap thus applying band The by modulated 9]. [8, be K’ and K points Dirac acltosso htteeeg adcnb signifi- be can catch band to energy as the so that large first-principles systems Recently, show a silicene valleytronics. create calculations in to in TMDs desirable SOC with is up and it gap Thus SOC. band due weak suit- devices 21]. the valleytronics not in [20, to is operations silicene effect switching that for Hall seems able it spin TMDs, valley-dependence with Compared a in result † ∗ lcrncades [email protected] address: Electronic lcrncades [email protected] address: Electronic iiee o-uke ooae-oecm lattice monolayer-honeycomb low-buckled a Silicene, h xsec ftesi-alyculn ae sil- makes coupling spin-valley the of existence The tancnrle alyadsi eaaini iieeh silicene in separation spin and valley Strain-controlled ASnmes 36.b 17.j 17.k 73.22.-f 71.70.Fk, 71.70.Ej, 73.63.-b, numbers: PACS a valley strain-induced the devices. of t valleytronics phenomenon changing silicene-based The by Theref strain. transport the spin-dependent directions. of and transverse a valley opposite field of two but electric lation the directions, an val in transverse of move and opposite electrons also strain the in a are lobes separ only When transmission not spin-dependent region, only. and scattering field valley central electric that the found by is It junctions. eaottetgtbnigmd-acigmto osuyth study to method mode-matching tight-binding the adopt We 1 .INTRODUCTION I. eateto hsc,Hnzo iniUiest,Hangzh University, Dianzi Hangzhou Physics, of Department lcrcladCmue niern eatet National Department, Engineering Computer and Electrical Qian unLi Yuan 2 .Bai R. , 3 aghuDaz nvriy aghu hjag301,Chi 310018, Zhejiang Hangzhou, University, Dianzi Hangzhou eateto hsc n e aoaoyfrLow-Dimension for Laboratory Key and Physics of Department unu tutrsadMnplto Mnsr fEducatio of (Ministry Manipulation and Structures Quantum 4 1 opttoa aolcrnc n aodvc Laborator Nano-device and Nanoelectronics Computational , ua omlUiest,Cagh 101 hn and China 410081, Changsha University, Normal Hunan 2 , 2 ∗ niern rv ,Snaoe177,Singapore 117576, Singapore 3, Drive Engineering 4 .H Zhou H. G. , 2 .B Zhu B. H. etrfrItgae pnrncDvcs(CISD), Devices Spintronic Integrated for Center 2 n WSe and . 5e tthe at 55meV 1 Dtd coe ,2018) 1, October (Dated: .Q Wang Q. G. , 3 .Yesilyurt C. , 2 can , es[2 3.Tesri-nue adgpo silicene 0 of of gap value sys- maximum band silicene the strain-induced reach in The can strain structures 23]. a [22, applying tems by modulated cantly nosrthbesbtae,smlrt h taneetin effect strain the deposition MoS to via similar silicene substrates, in stretchable strain onto controllable one a Experimentally, realize switching can devices. for valleytronics suitable in and which TMDs operations gap, of band that large to comparable a is induce can strain the Obviously, oee,fragnrlcnieain .. o compli- for e.g., consideration, general a geometries. system for simplified However, with those prob- results certain especially for analytical lems, insights yielding physical sil- basic of the in advantage capture transport which the has of a It studies as serve theoretical icene. only for can point which approach starting effective an is electric theory the and strain the the of utilizing fields. polarizations by spin effec- devices and to silicene valley route the novel modulate a provides tively strain, phenomenon the magnetic This or of materials fields. direction ferromagnetic for stretch need the the chang- or without by modu- amplitude transport effective the spin-dependent an strain ing and realize the valley can Combining of one lation field, field. electric electric dis- the the be that and by show cannot only results electrons persed spin-dependent Our and the systems. valley- and silicene strain the create the in thus utilizing field by valleys, electric separation different sepa- spin of to distinct fermions way a Dirac efficient an the mode- propose rate tight-binding the and adopt method we matching pre- paper, discussed this been In not viously. has systems silicene in separation 1 .Z Peng Z. Y. , 4 oprn ihtetgtbnigmdl h Dirac the model, tight-binding the with Comparing spin and valley the on strain the of effect the However, .B Siu B. Z. , 2 esKadK eaae notodistinct two into separated K’ and K leys h psi n onsi lcrn will electrons down-spin and up-spin the 2] rb xriga xenlmcaia force. mechanical external an exerting by or [25], r,oecnraiea ffciemodu- effective an realize can one ore, eapiueadtesrthdirection stretch the and amplitude he dsi eeto a eepotdfor exploited be can deflection spin nd to feetoscno eachieved be cannot electrons of ation esmlaeul ple othe to applied simultaneously re taneeto iieehetero- silicene on effect strain e 4 u hjag301,China 310018, Zhejiang ou, 1 n .B .Jalil A. B. M. and , nvriyo Singapore, of University .R Xu R. J. , n), y, eterojunctions 1 na .H. Z. , al 4 † . 8V[24]. 08eV 2

] II. MODEL AND DISPERSION RELATIONS ¡ We consider a low-buckled silicene sheet with zigzag Top view direction along the axis x, in which the angle Ω describes Side view the amplitude of the buckling with lattice constant being a = 3.86A˚. In the central scattering region, the silicene StrainStr ain sheet is stretched (or compressed) along the angle φ rel- ative to the axis x, as shown in Fig. 1. Note that we as- [ [   sume there exists no strain outside the central scattering [ -׎  region. The silicene sheet can be described by the four \ band second-nearest-neighbor tight-binding model [9, 16] \ c V E [c i , zi z [ ~ † tso(ξ) † z H = Viciαciα + i νij ciασαβ cjβ Drain 3√3 Source SScatteringcatterin g reregiongio n Xiα hhi,jXiiαβ

2 † z i tR (ξ~) µic (~σ dˆij ) cjβ FIG. 1: Schematic of the silicene heterojunction with an uni- − 3 2 iα × αβ i,jXαβ axial strain, electric field and voltage potential in the central hh ii scattering region. The zigzag direction of the honeycomb lat- ~ † † t(ξ) ciαcjα µiazEzciαciα, (1) tice (x-y plane) is always parallel to the axis x, the tension is − − hXi,jiα Xiα applied along the angle φ relative to the axis x, and the angle Ω is defined as between the Si-Si bond and the z direction † where ciα(ciα) refers to the creation (annihilation) op- normal to the plane. erator with spin index α at site i, and i, j / i, j run over all the nearest or next-nearest neighborh i hh hoppingii sites. The first term is the on-site potential energy, the cated geometries, or for spatially dependent variation in second term denotes the effective spin-orbit coupling with the lattice configuration (e.g. due to strain or defects), the hopping parameter tso(ξ~), where ~σ = (σx, σy, σz) the low-energy Dirac Hamiltonian is not readily avail- are the spin Pauli matrix operators, and νij = 1 for able, and one has to resort to the more general tight- the anticlockwise (clockwise) hopping between the± next- binding model. Furthermore, the tight-binding model nearest-neighboring sites with respect to the positive would automatically include higher-order terms and the z axis. The third term represents the Rashba spin- contribution of both the K and K’ valleys, and allow orbit coupling with µi = 1 for the A(B) site, where for the complete band information to be captured (even ± dˆij = dij / dij refers to the unit vector connecting the for spatially varying systems). Furthermore, the effects two next-nearest-neighboring| | sites. The fourth term is of leads and other interactions (impurity scattering, etc.) the nearest-neighbor hopping with the transfer energy can be included systematically in the tight-binding model t(ξ~), where the vector ξ~ is adopted to describe the elas- combined with the non-equilibrium Green’s function ap- tic response for which deformations are affine [27]. The proach (NEGF) and the mode-matching method. The fifth term describes the contribution of the staggered sub- tight-binding NEGF formalisms form the basis of quan- lattice potential, with 2az = 0.46A˚ being the distance tum transport modeling of nanoscale devices [26]. It of the two sublattice planes. The relaxed equilibrium can deal with a wide range of conductors, composed of values for the hopping parameters are t0(ξ~) 1.09eV, a scattering region and external leads, under the appli- ≈ t0 (ξ~) 3.9meV and t0 (ξ~) 0.7meV [9]. cation of a bias. Therefore, it is important to develop so ≈ R2 ≈ and demonstrate the use of the tight-binding NEGF tech- In the central scattering region, the silicene sheet is nique and the mode-matching method in this paper, due uniformly stretched (or compressed) along the angle φ to its more general application than that of the effective relative to the axis x. Note that we assume there ex- Dirac Hamiltonian. ists no strain outside the central scattering region. In the considered Cartesian coordinates, the tension T can The paper is organized as follows. In Sec. II, we in- be written as T = T(cos φeˆ + sin φeˆ ). It is conve- troduce the system under consideration, i.e., a silicene x y nient to represent the tension in the principal coordi- heterojunction under the influence of strain and exter- nates Ox′y′, i.e., T = Tˆe ′ . In terms of the generalized nal electric field applied to the central scattering region. x Hooke’s law [27], the strain ǫ′ are related to the com- We then calculate the strain-modulated hopping param- ij ponents of the compliance tensor, namely ǫ′ = TS , eters based on the Slater-Koster framework, and ana- ij ijxx with the indices i, j = x,y,z. For the honeycomb lattice, lyze the dispersion relations. In Sec. III, we employ we know that only five compliance tensor components are the mode-matching method to investigate the spin and independent (i.e., S , S , S , S , S ) [28]. valley-dependent angular transmissions. In Sec. IV, the xxxx xxyy xxzz zzzz yzyz Thus, the Poisson’s transverse ratio and perpendicular combined effects of the strain and the electric field on the ratio are defined as valley and spin separation are analyzed and discussed. A summary is given in Sec. V. ν = Sxxyy/Sxxxx,ν = Sxxzz/Sxxxx. (2) k − ⊥ − 3

0.05 0.05 0.02 0.02 (a) (b) 0.04 0.04 0.015 0.015

0.03 0.03 0.01 0.01 0.02 0.02 (0.667,0.0078662) (1.333,0.0078662) 0.005 0.005 0.01 0.01 K K’ 0 (0.667,0.00409) 0 (1.333,0.00409) 0 K 0 K’ E (eV) E (eV) E (eV) E (eV) −0.01 −0.01 −0.005 −0.005

−0.02 −0.02 −0.01 −0.01 −0.03 −0.03

−0.015 −0.015 −0.04 −0.04

−0.05 −0.05 −0.02 −0.02 0.65 0.66 0.67 0.68 1.31 1.32 1.33 1.34 1.35 0.66 0.665 0.67 0.675 1.325 1.33 1.335 1.34 k (π/a) k (eV) k (π/a) k (π/a) x x x x

0.02 0.02 0.2 0.2 (c) (d) 0.015 0.015 0.15 0.15

0.01 0.01 0.1 0.1 (0.666,0.0083) (1.334,0.0083) 0.005 0.005 0.05 0.05 (0.657,0.049) (1.343,0.049) (0.666,0.0028) (1.334,0.0028) 0 0 0 0 E(eV) E (eV) E (eV) E (eV)

-0.005 -0.005 -0.05 -0.05

-0.01 -0.01 -0.1 -0.1

-0.015 -0.015 -0.15 -0.15

-0.02 -0.02 -0.2 -0.2 0.65 0.66 0.67 0.68 1.32 1.33 1.34 1.35 0.55 0.6 0.65 0.7 0.75 1.25 1.3 1.35 1.4 1.45 k (π/a) k (π/a) k (π/a) k (π/a) x x x x

FIG. 2: The dispersion relations are plotted as a function of the wave vector kx for (a) Ez = 0, ǫ0 = 0, the energy difference is △E = 8.2meV, (b)Ez = 16.96meVA˚, ǫ0 = 0, (c)Ez = 16.96meVA˚, ǫ0 = 0.005, (d)Ez = 16.96meVA˚, ǫ0 = 0.05. The other ◦ parameters are νk = 0.25, ν⊥ = 2.5, φ = 30 and ky = 0. The red and blue arrows refers to the spin indexes.

When the strain is applied to the low-buckled geom- gradually stretched to a planar structure. etry, the lattice deformation will result in the change of For the low-buckled silicene described by s and p or- the vectors ξℓ (ℓ = 1, 2, 3). Expanded in the first-order bitals, there are four types of hopping integrals Vssσ , approximation, the strain-dependent vectors are given by Vspσ, Vppσ and Vppπ. Within the Slater-Koster frame- ~ ~0 ξℓ = (1+~ǫ)ξℓ , which thus modulates the hopping terms. work [29], the hopping processes between the two neigh- Accordingly, we obtain the deformed bond length as fol- boring sites depend only on the bond length and the rel- lows ative angle Ω. The hopping parameters in equation (1) can be calculated in terms of the formula given in Ref. √2 ξ~ = ǫ [(2 cos2 φ + √3 sin 2φ)(1 + ν ) (3) [9], which considered the weak contribution of the angle | 1| 10 0 k  Ω on the hopping processes. Under the two-center ap- ν⊥ 5√2 proximation adopted by Slater and Koster, the hopping +(1 3ν )] + a, − k − 6 12 integrals can be expressed as [30]

√2 2 −α2 α4 ξ~ = ǫ [(2 cos φ √3 sin 2φ)(1 + ν ) Vµ(rℓ)= α1r exp( α3r ), (4) | 2| 10 0 − k ℓ − ℓ  ν⊥ 5√2 where µ refers to the four types of the hopping integrals, +(1 3νk )] + a, ~ − − 6 12 rℓ = ξℓ is the bond length, ακ(κ = 1, 2, 3, 4) denotes | | 2√2 ν 5√2 the system parameters for silicene. So far, there are ξ~ = ǫ [(1 ⊥ ) cos2 φ(1 + ν )] + a. no microscopic evaluations of the four parameters for | 3| 5 0 − 24 − k 12  the silicene sheet from experiments and first-principle The height is h = √2(1 ν ǫ )/12. As the deforma- calculations. We slightly modify the parameters ob- − ⊥ 0 tion is increased to ǫ0 = 1/ν⊥, the buckled structure is tained from Environment-dependent tight-binding po- 4

1 1 2 (a) ǫ =0 2 ǫ 0 (b) =0.02 0.8 0.8 0 2 1 1.5 2 1.5 1 1.5 0.6 0.6 1 1.5 1 1 0.4 1 (0.667,0,0.001) 0.4 (0.664,0.008,0.001)

1 1

1 0.2 0.2 0.5 0.5 0.5 1 K K 1 0 0 /1.73a) /1.73a)

1 π K' π 1 K'

1 ( ( 0.5 y -0.2 1 y -0.2 k k

-0.4 -0.4 (1.336,-0.008,0.001) (1.333,0,0.001) 1 1 1.5 -0.6 -0.6 1.5 1 1 1 2 2 -0.8 1.5 -0.8 1.5

2 2 -1 -1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 k (π/a) k (π/a) x x

1 1 2 (c) ǫ =0.05 2 0 0.8 0.8 1 2 1 1.5 2 1.5 (d) ǫ =0.1 1.5 0 0.6 1.5 0.6 1 1

0.4 (0.658,0.028,0.001 1 0.4 (0.644,0.066,0.002) 1

0.2 0.2 1 0.5 1 1 K K 1 0 0

1 /1.73a) /1.73a)

π 0.5 π 1 K' K' ( 1 ( 0.5 y -0.2 y -0.2 1 k 0.5 k

-0.4 (1.342,-0.028,0.001) -0.4 1 1 1 (1.356,-0.066,0.002)

1 -0.6 1 1.5 -0.6 1.5 1 2 1.5 2 -0.8 1.5 -0.8 2 2 -1 -1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 k (π/a) k (π/a) x x

FIG. 3: Contour plot of the dispersion relations as a function of the wave vectors kx and ky for different strain strengths: (a) ǫ0 = 0, (b) ǫ0 = 0.02, (c) ǫ0 = 0.05 and (d) ǫ0 = 0.1. The solid lines are equal energy contour lines corresponding to energy ◦ values of 0.5eV, 1eV, 1.5eV, and 2eV. The parameters are Ez = 16.96meVA˚, νk = 0.25, ν⊥ = 2.5, and φ = 30 . The blue and red squares refer to the Dirac points of K and K’ with the value of (kx,ky,E).

tential model [30] to mimic the hopping integral of the when ǫ0 =0.005, the energy difference of the conduction silicene sheet. band and the valence band increases to 5.6meV. With in- The Possion’s transverse ratio and perpendicular ra- creasing amplitude of the strain to ǫ0 =0.05, as shown in tio can change slightly with increasing strain [22]. For Fig. 2(d), the energy difference is significantly enlarged simplicity, in our numerical calculation, we choose the to about 100meV for the two valleys. Especially, the spin-polarization induced by the electric field is also sup- Possion’s ratio to be νk = 0.25 and ν⊥ = 2.5. For this case, the low-buckled silicene will be stretched to a planar pressed, and the dispersion relation recovers the spin and structure when the strain is close to 0.4. valley degeneracy. We first investigate the dispersion relation of the It is natural to consider whether the minima of energy infinite-sized, homogeneous silicene sheet under the in- profile for the two valleys still concide at ky = 0 in the fluence of the strain ǫ0 and the electric field Ez, as shown presence of the strain. In order to clarify the effect of the in Fig. 2. In the absence of the strain and the electric strain on Dirac points, we plot the dispersion relations field, the energy band is spin and valley-degenerate and as a function of the wave vectors kx and ky for different has a small band gap of about 8.2meV arising from the strain strengths, as shown in Fig. 3. We can see that, effective spin-orbit coupling. When the electric field is in- when ǫ0 = 0, the Dirac points of K and K’ are located creased to the critical value Ezc = tso/az = 16.96meVA˚ at the points with the wave vectors (kx, ky)= (0.667, 0) [see Fig. 2(b)], we find that the band gap gradually ap- and (1.333, 0), respectively. Interestingly, the Dirac point proaches to zero for up-spin electrons at K valley and K moves towards the positive direction of ky axis, while down-spin electrons at K’ valley. Correspondingly, the the Dirac point K’ moves towards the negative direction spin and valley-degeneracy are broken by the electric with the strain increasing from ǫ0 =0to0.1. Thus, the field. Thus the electrons can become perfectly spin-up application of strain results in a relative transverse shift (spin-down) polarized at the K (K’) point under the in- of the two Dirac cones. At the same time, the Dirac fluence of the electric field Ezc, which agrees well with the points of K and K’ also move away from each other results obtained from the low-energy theory [11]. When along the kx direction. Therefore, the dispersion rela- the strain is applied to the silicene system, for example tions in Fig. 2(c) and (d) are just representing a cut of 5 the Dirac cone at ky = 0, and that the energy differ- tonian matrix connecting the sites between neighboring ence between the conduction and valence bands depicted there are not the actual band gap. For comparison, we recall the graphene system where the strain can induce pseudo-magnetic fields greater than 300 Tesla [31]. This pseudo-magnetic field can be described by a gauge field in the low-energy approximation [32]. Correspondingly,A the Hamiltonian of the strained graphene sheet has the form [33, 34] H = vF σ (~p /vF ), where has reversed signs for valleys K and K’.· −A Considering theA strain-induced deflection of the Dirac points of K and K’, it is reason- able to deduce that one can also adopt a gauge field to effectively describe the strain effect in the silicene sheet.

III. CALCULATION OF TRANSPORT PROPERTY   In order to calculate the transport property, we adopt   the method formulated by Ando [35]. The silicene het- FIG. 4: The system is divided into cells indicated by an index τ. Hτ,τ is the Hamiltonian matrix representing the hopping erojunction is divided into cells indicated by an index τ,  terms between sites within cell τ; Hτ,τ 1 is the Hamiltonian which represents a minimum repeating unit, as shown in  ± matrix connecting the sites between neighboring cells. Fig. 4. The source and drain are ideal leads that span the cells τ = ,..., 0 and τ = S +1,..., . The cen- cells, which can be mapped from the tight-binding Hamil- tral scattering−∞ region spans the cells τ =1, 2∞,...,S. The tonian in Eq. (1). Schr¨odinger equation of the silicene heterojunction can First, we need to find the solutions of the wavefunction be written as in leads. Since the leads have periodic structures, the vectors in subsequent cells satisfy the Bloch condition Hτ,τ ψτ + (EI Hτ,τ )ψτ Hτ,τ ψτ =0, (5) − −1 −1 − − +1 +1 ψτ = λψτ−1, (6) for τ = ,..., . If each cells contains N orbitals, ψτ −∞ ∞ ikxa is a N dimensional vector including the wave-function where λ = e is the Bloch factor with kx real for prop- coefficients of all orbitals for cell τ. Hτ,τ is the N N agating waves and complex for evanescent waves. Sub- Hamiltonian matrix representing the hopping terms× be- stituting this formula into Eq. (5) for left and right leads, tween sites within cell τ, Hτ,τ is the N N Hamil- we can obtain the generalized eigenvalue equation: ±1 ×

I H H H† E τ,τ τ,τ+1 τ,τ+1 0 ψτ −I λ − I = 0 (7) h  0  −  0  i  ψτ−1 

After solving this equation, we obtain nontrivial solu- where the sign of the velocities distinguishes right from tions, which can be divided into propagating modes and left propagation. Accordingly, we can distinguish the val- evanescent modes in terms of the eigenvalues [36]. The leys K and K’ in terms of the wave vector kx derived from eigenvalues of the propagating modes and the evanescent the eigenvalue λ. The first valley K is related to the lon- modes satisfy the conditions λ( ) = 1 and λ( ) = 1, gitudinal wave vector kxa (0, π), whereas the second | ± | | ± | 6 ∈ respectively, with +/ referring to the right-going modes valley K’ lies in the wave vector regime kxa (π, 2π) [37]. and left-going modes.− When λ(+) < 1, the eigenvec- The general solution of the leads can be∈ written as tor is named as right-going evanescent| | modes, while the states with λ( ) > 1 associate with left-going evanes- ψτ = ψτ (+) + ψτ ( ) ′ − ′ | − | τ−τ τ−τ cent modes. For the propagating states, in order to dis- = F (+)ψτ ′ (+) + F ( )ψτ ′ ( ), (9) tinguish the right- and left-going modes, one needs to − − where the matrices F( ) are defined as calculate their Bloch velocities ± N F ˜† 2a † † ( )= λn( )ψn( )ψn( ), (10) vn( )= Im[λn( )ψn( ) H ψn( )], (8) ± ± ± ± ± − ~ ± ± τ,τ+1 ± Xn 6

        FIG. 6: (a)The K valley (b) and K’ valley dependence of the    transmission are plotted as a function of the incident angle θ FIG. 5: (a) The valley dependence and (b) spin dependence for different amplitudes of the strain. The other parameters  of the transmission are plotted as a function of the incident are Ez = 0, EF = 7.9meV, V0 = 8.4meV and L = 193nm. angle θ for Ez = 0 and ǫ0 = 0.005. The other parameters are EF = 7.9meV, V0 = 8.4meV and L = 193nm. Accordingly, the total transmission can be written as where ψ˜n( ) are dual vectors, which satisfy the following N ± vR,n 2 relations TLR(ky, E)= tn,m , vL,m | | † † Xn,m ψ˜ ( )ψm( )= δn,m, ψ ( )ψ˜m( )= δn,m. (11) n ± ± n ± ± ˜† (0) −1 tn,m = ψR,n(+)GS+1,0[G0,0] ψL,m(+), (15) Note that the eigenvectors are nonorthogonal. Next we calculate the solutions of the scattering re- (0) where G0,0 and GS+1,0 refer to the Green’s function of gions. By treating the effect of the leads as the bound- the left lead and the full system, respectively, which can ary conditions, the Schr¨odinger equation of the scattering be obtained by using the iterative techniques of Green’s region can be modified as function approach [36]. After obtaining the Green’s func- ′ ′ ′ tions, we can calculate the valley-resolved transmission in H ψτ + (EI H )ψτ H ψτ − τ,τ−1 −1 − τ,τ − τ,τ+1 +1 terms of the corresponding eigenvalues. Λ = 0ψ0(+)δτ,0, (12) Utilizing the periodical boundary conditions at the transverse direction, we can introduce the wave vector where the index of the cells becomes τ =0, 1,,...,S,S + k into the Hamiltonian and effectively mimic the sil- 1. The renormalized Hamiltonian matrices are y icene sheet by using a silicene nanoribbon with zigzag H′ HL HL F−1 chain number of Ny = 2 [38]. The incident angle is de- 0,0 = τ ′,τ ′ + τ ′,τ ′+1 L ( ), − fined as θ = arcsin(k /k ), where the Fermi wave vector ′ R R† −1 y F H H ′ ′ H ′ ′ F S+1,S+1 = τ ,τ + τ ,τ +1 R (+), kF can be obtained from the relation [11] H′ H′ 0,−1 =0, S+1,S+2 =0, (13) 2 ′ E = ~2v2 k2 + a E t2 + a2t2 k2 , (16) and other Hamiltonian matrices are H ′ = H ′ for F F F z z so R2 F τ,τ τ,τ r  − q  the indexes τ, τ ′ =0, 1,...,S,S +1. The source term is Λ HL F−1 F−1 0 = τ ′,τ ′+1[ L (+) L ( )] with L/R referring to with vF = √3at/2 being the Fermi velocity. the left and right leads.− − Eq. (12) gives a set of linear equations, which can be solved efficiently by using the block Gaussian elimination IV. RESULTS AND DISCUSSION method. We can then obtain the transmission matrix elements tn,m by expanding the vector ψS+1(+) in modes It is found that the valley-dependent and spin- of the right lead dependent electrons cannot be dispersed by only the elec-

N tric field. We thus consider the effect of the strain on the transport properties. In the central scattering region, ψ (+) = ψ (+)t , (14) S+1 R,n n,m the silicene sheet is uniformly stretched along the an- Xn ◦ gle φ = 30 relative to the axis x with Ez = 0. When where the incoming wave is chosen as one of the propagat- the strain is ǫ0 = 0.005,the transmission curve of K val- ing modes of the left lead, namely ψ0(+) = ψL,m. After ley is deflected upwards, while the curve of K’ valley is running the vector ψ0(+) runs over all possible modes deflected downwards, as shown in Fig. 5(a). Moreover, of the left lead, namely ψL,m,m = 1, 2,...,N, the full the maximum value of the transmission is significantly transmission matrix can be obtained. reduced to about 0.08 due to the effect of the strain. 7

° 1 (a) 1 ° 60 (b) 60 ° 90 90 ° ° 0.8 ° 0.8 φ=90 φ=90 ° ° φ=45 0.6 φ=45 0.6 ° 30 ° 30 φ=30 ° φ=30 ° 0.4 0.4 φ=0 ° φ=0 ° φ=−30° 0.2 φ=−30° 0.2 φ=−45° ) φ=−45° θ 0 ) 0 ° ( φ=−90

° θ ↑

φ=−90 ( 0° °

↓ 0 T T

−30 ° −30 °

° ° ° −90 ° −90 −60 −60

    FIG. 8: The transmission of (a) up-spin and (b) down-spin   electrons are plotted as a function of the incident angle θ FIG. 7: (a) The valley dependence and (b) spin dependence for different angles φ. The other parameters are Ez = of the transmission are plotted as a function of the incident   16.96meVA˚, ǫ0 = 0.006, EF = 7.9meV, V0 = 8.4meV and angle θ for Ez = 16.96meVA˚ and ǫ0 = 0.006. The other  L = 193nm. parameters are EF = 7.9meV, V0 = 8.4meV and L = 193nm.

sion curves of valleys K and K’ still deflect upwards and It means that the strain can result in the separation of downwards, respectively[see Fig. 7(a)]. The transmis- Dirac fermions of K and K’ valleys, which is similar with sion profile of up-spin (down-spin) electrons is also ob- the deflection behavior induced by real magnetic fields in viously pushed upwards (downwards). This shows that graphene systems [39–41]. the up-spin (down-spin) component is related to K (K’) In Fig. 5(b), we see that the spin-dependent transmis- valley. Therefore, one can separate the electrons of differ- sion is decreased to about 0.052. However, the trans- ent spins into two opposite transverse directions, which mission profiles of up-spin and down-spin electrons are can result in a strain-induced spin (valley) Hall effect identical and symmetric with respect to normal inci- in a suitable silicene device. This phenomenon is simi- dence.Thus, the strain can separate the electrons of val- lar with the spin-valley Hall effect reported in monolayer leys K and K’ but cannot separate the up-spin and down- graphene [42]. spin electrons. Similarly, the up-spin (down-spin) transmission curves In order to clarify the effect of the strain on the valley- are deflected upwards (downwards) when φ = 30◦ and dependent transport, we plot the transmission of valleys φ = 45◦, as shown in Fig. 8. However, when the an- K and K’ as a function of the incident angle θ for differ- gle is changed to negative values, namely φ = 30◦ and ent amplitudes of the strain, as shown in Fig. 6. We find φ = 45◦, the transmission profiles of up-spin and− down- that the transmission profile of K valley is deflected up- spin− components are pushed downwards and upwards, wards with increasing strain from 0.004 to 0.01. When respectively. When the strain is along the zigzag or arm- ǫ0 = 0.01, the transmission of electrons is pushed to- chair direction, the transmission profiles of two spin com- wards the angular regime θ > 45◦ [see Fig. 6(a)]. Seen ponents are symmetrical with respective to the normal from the physical picture of view, the K-valley electrons incident, so the up-spin and down-spin electrons can not will be scattered back the left region if the incident angle be separated at these strain configurations. These re- is smaller than a certain critical angle. Correspondingly, sults imply that one can modulate the spin polarization the transmission profile of the K’ valley is deflected down- by changing the stretching angle of the strain. wards under the influence of the strain. The K’-valley Since germanene also has a honeycomb geometry [13, electrons will be deflected back into the incident region 16] and its Hamiltonian is the same as equation (1), ger- when the incident angle is larger than a certain angle. manene can be modeled by replacing the parameters with When the strain is along the zigzag or armchair direc- t =1.3eV, tso = 43meV, tR2 = 10.7meV and az =0.33A˚. tion, namely φ = 0◦, φ = 90◦ and φ = 90◦, the trans- The band gap induced by the spin-orbit couplings can − mission profiles have no deflection behavior, which is a reach 93meV [9], which can provide a significant mod- distinct anisotropy behavior for the strain modulation of ulation of spin- and valley-dependent properties. We the valley current. think one can also observe the spin and valley separa- The above analysis show that strain can be utilized tion in germanene systems due to its similar geometry to separate the Dirac fermions of different valleys. Since and low-buckling structure. The numerical trends of the silicene has a spin-valley correlation, it is thus natural spin-valley separation due to strain in germanene sys- to think that we can separate the electrons of different tems would be the same as those shown in Figs. 5-8 for spins in the silicene sheet by applying the strain and silicene. an external electric field. Fig. 7 gives a clear picture However, the parameters (e.g. the change in the bond of the strain modulation of spin and valley components. length, and the α coefficients in the Slater-Koster inte- When Ez = 16.96meVA˚ and ǫ0 = 0.006, the transmis- gral) under the influence of strain and the electric field 8 would be different. Their exact values need to be de- be deflected to two opposite transverse directions, thus termined e.g. by ab initio calculations, and currently resulting in the separation of valleys K and K’. When a they are not available in the literature, unlike for silicene. strain and an electric field are applied to the scattering re- However, given the larger SOC values in germanene, we gion simultaneously, not only are the electrons of valleys believe that one would require a relatively smaller am- K and K’ separated into two branches, but the up-spin plitude of the strain to realize the same degree of valley and down-spin electrons will also move towards two op- and spin separation in comparison with silicene systems. posite transverse directions correspondingly. Therefore, Thus, in experimental investigation of germanene sys- combining the strain and the electric field, one can real- tems, we envisage that would be easier to realize the val- ize an effective modulation of the valley-dependent and ley and spin separation by applying similar strain and the spin-dependent transport by changing the amplitude and electric field configurations as that assumed in this paper the stretching direction of the strain. Our results may be for the strained silicene system. This suggests that the helpful for exploring the transport mechanism of strain strain-induced valley and spin separation can in general modulated silicene systems and making the new types of be observed in 2D materials with low-buckled honeycomb the silicene-based valleytronics and spintronics devices. structures.

Acknowledgments V. CONCLUSIONS This work was supported by NSF-China (Grant No. In summary, we have studied the effect of the strain 11574067), Natural Science Foundation of Zhejiang and the external electric field on the dispersion relation Province (Grant Nos. LY16A040007, LY15E060007, and the transport property of a silicene heterojunction. LQ17F010004), and the National Research Foundation It is found that the valley-dependent and spin-dependent of Singapore under the Competitive Research Program electrons cannot be dispersed only by the electric field. ”Non-Volatile Magnetic Logic And Memory Integrated In the presence of the strain, the transmission profiles can Circuit Devices” NRF-CRP9-2011-01.

[1] B. Aufray, A. Kara, S. Vizzini, H. Oughaddou, C. Lean- (2013). dri, B. Ealet and G. Le Lay, Appl. Phys. Lett. 96, 183102 [15] N. Missault, P. Vasilopoulos, V. Vargiamidis, F. M. (2010). Peeters and B. Van Duppen, Phys. Rev. B 92, 195423 [2] P. De Padova, C. QuaresimaC. OttavianiP. M. (2015). Sheverdyaeva, P. Moras, D.Topwal, B. Olivieri, A. Kara, [16] M. Ezawa, Phys. Rev. Lett. 109, 055502 (2012). H. Oughaddou, B. Aufray and G. Le Lay, Appl. Phys. [17] H. Pan, Z. S. Li, C. C. Liu, G. B. Zhu, Z. H. Qiao and Lett. 96, 261905 (2010). Y. G. Yao Phys. Rev. Lett. 112, 106802 (2014). [3] B. Lalmi, H. Oughaddou, H. Enriquez, A. Kara, S. [18] L. Stille, C. J. Tabert, and E. J. Nicol, Phys. Rev. B 86, Vizzini, B. Ealet, and B. Aufray, Appl. Phys. Lett. 97, 195405 (2012). 223109 (2010). [19] C. Yesilyurt, S. G. Tan, G. C. Liang, and Mansoor B. A. [4] S. B. Fagan, R. J. Baierle, R. Mota, A. J. R. da Silva and Jalil, Appl. Phys. Express 8, 105201 (2015). A. Fazzio, Phys. Rev. B 61, 9994 (2000). [20] W. Y. Shan, H. Z. Lu and D. Xiao, Phys. Rev. B 88, [5] S. Cahangirov, M. Topsakal, E. Akturk, H. Sahin and S. 125301 (2013). Ciraci, Phys. Rev. Lett. 102, 236804 (2009). [21] D. Xiao, G. B. Liu, W. Feng, X. Xu and W. Yao, Phys. [6] P. Vogt, P. De Padova, C. Quaresima, J. Avila, E. Rev. Lett. 108, 196802 (2012). Frantzeskakis, M. C. Asensio, A. Resta, B. Ealet and [22] B. L. Wang, J.T. Wu, X. K. Gu, H. Q. Yin, Y. J. Wei, G. LeLay, Phys. Rev. Lett. 108, 155501 (2012). R. G. Yang and M. Dresselhaus, Appl. Phys. Lett. 104, [7] L. Chen, C.C. Liu, B. J. Feng, X. Y. He, P. Cheng, Z. 081902 (2014). J. Ding, S. Meng, Y. G. Yao and K. H. Wu, Phys. Rev. [23] J. F. Qu, X. Y. Peng, D. Xiao and J. X. Zhong, Phys. Lett. 109, 056804 (2012). Rev. B 94, 075418 (2016). [8] G. G. Guzm´an-Verri and L. C. Lew Yan Voon, Phys. Rev. [24] H. Zhao, Phys. Lett. A 376, 3546-3550 (2012). B 76, 075131 (2007). [25] A. Castellanos-Gomez, R. Rold´an, E. Cappelluti, M. [9] C. C. Liu, H. Jiang, Y. G. Yao, Phys. Rev. B 84, 195430 Buscema, F. Guinea, S. S. J. van der Zant, and G. A. (2011). Steele, Nano Lett. 13, 5361 (2013). [10] N. D. Drummond, V. Z´olyomi, and V. I. Falko, Phys. [26] S. Datta, Electronic Transport in Mesoscopic Systems Rev. B 85, 075423 (2012). (Cambridge University Press, Cambridge, 1995). [11] M. Ezawa, New J. Phys. 14, 033003 (2012). [27] V. M. Pereira, A. H. Castro Neto, and N. M. R. Peres, [12] X. T. An, Y. Y. Zhang, J. J. Liu and S. S. Li, Appl. Phys. Phys. Rev. B 80, 045401 (2009). Lett. 102, 043113 (2013). [28] O. L. Blakslee, D. G.Proctor, E. J. Seldin, G. B. Spence [13] C. C. Liu, W. Feng and Y. G. Yao, Phys. Rev. Lett. 107, and T. Weng, J. Appl. Phys. 41, 3373 (1970). 076802 (2011). [29] J. C. Slater and G. F. Koster, Phys. Rev. 94, 1498 (1954). [14] C. J. Tabert and E. J. Nicol, Phys. Rev. B 87, 235426 [30] S. Yip and T. D. de la Rubia, Scientific Modeling and 9

Simulations (Page 99), Springer-Verlag Berlin Heidelberg and P. J. Kelly, Phys. Rev. B 72, 035450 (2005). (2009). [37] A. Rycerz, J. TworzydLo, and C. W. J. Beenakker, Nat. [31] N. Levy, S. A. Burke, K. L. Meaker, M. Panlasigui, A. Phys. 3, 172 (2007). Zettl, F. Guinea, A. H. C. Neto and M. F. Crommie. [38] Y. Li, Q. Wan, Y. Z. Peng, G. Q. Wang, Z. H. Qian, G. Science 329, 544-547 (2010). H. Zhou and M. B. A. Jalil, Sci. Rep. 5, 18458 (2015). [32] M. M. Fogler, F. Guinea, and M. I. Katsnelson, Phys. [39] A. De Martino, L. DellAnna and R. Egger, Phys. Rev. Rev. Lett. 101, 226804 (2008). Lett. 98, 066802 (2007). [33] V. M. Pereira and A. H. Castro Neto, Phys. Rev. Lett. [40] M. R. Masir, P. Vasilopoulos and F. M. Peeters, Appl. 103, 046801 (2009). Phys. Lett. 93, 242103 (2008). [34] T. Fujita, M. B. A. Jalil and S. G. Tan, Appl. Phys. Lett. [41] Y. Li, M. B. A. Jalil and G. H. Zhou, Appl. Phys. Lett. 97, 043508 (2010). 105, 193108 (2014). [35] T. Ando, Phys. Rev. B 44, 8017 (1991). [42] S. F. Islam and C. Benjamin, Carbon 110, 304 (2016). [36] P. A. Khomyakov, G. Brocks, V. Karpan, M. Zwierzycki