Valleytronics: Opportunities, Challenges, and Paths Forward
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Theory and Application of Fermi Pseudo-Potential in One Dimension
Theory and application of Fermi pseudo-potential in one dimension The Harvard community has made this article openly available. Please share how this access benefits you. Your story matters Citation Wu, Tai Tsun, and Ming Lun Yu. 2002. “Theory and Application of Fermi Pseudo-Potential in One Dimension.” Journal of Mathematical Physics 43 (12): 5949–76. https:// doi.org/10.1063/1.1519940. Citable link http://nrs.harvard.edu/urn-3:HUL.InstRepos:41555821 Terms of Use This article was downloaded from Harvard University’s DASH repository, and is made available under the terms and conditions applicable to Other Posted Material, as set forth at http:// nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of- use#LAA CERN-TH/2002-097 Theory and application of Fermi pseudo-potential in one dimension Tai Tsun Wu Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts, U.S.A., and Theoretical Physics Division, CERN, Geneva, Switzerland and Ming Lun Yu 41019 Pajaro Drive, Fremont, California, U.S.A.∗ Abstract The theory of interaction at one point is developed for the one-dimensional Schr¨odinger equation. In analog with the three-dimensional case, the resulting interaction is referred to as the Fermi pseudo-potential. The dominant feature of this one-dimensional problem comes from the fact that the real line becomes disconnected when one point is removed. The general interaction at one point is found to be the sum of three terms, the well-known delta-function potential arXiv:math-ph/0208030v1 21 Aug 2002 and two Fermi pseudo-potentials, one odd under space reflection and the other even. -
A Valleytronic Diamond Transistor: Electrostatic Control of Valley-Currents and Charge State Manipulation of NV Centers
A valleytronic diamond transistor: electrostatic control of valley-currents and charge state manipulation of NV centers N. Suntornwipat1, S. Majdi1, M. Gabrysch1, K. K. Kovi1,3, V. Djurberg1, I. Friel2, D. J. Twitchen2 and J. Isberg1* 1 Division for Electricity, Department of Electrical Engineering, Uppsala University, Box 65, 751 03, Uppsala, Sweden. 2 Element Six, Global Innovation Centre, Fermi Ave, Harwell Oxford, Oxfordshire OX11 0QR, United Kingdom. 3 Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL-60439, United States. (Dated: 17nd Sep 2020) The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices require all-electric control of long-lived valley-polarized states, without the use of strong external magnetic fields. Attributable to the extreme strength of the carbon-carbon bond, diamond possesses exceptionally stable valley states which provides a useful platform for valleytronic devices. Using ultra-pure single- crystalline diamond, we here demonstrate electrostatic control of valley-currents in a dual gate field-effect transistor, where the electrons are generated with a short UV pulse. The charge- and the valley- current measured at receiving electrodes are controlled separately by varying the gate voltages. A proposed model based on drift-diffusion equations coupled through rate terms, with the rates computed by microscopic Monte Carlo simulations, is used to interpret experimental data. As an application, valley-current charge- state modulation of nitrogen-vacancy (NV) centers is demonstrated. Charge and spin are both well-defined quantum numbers created in diamond.6 This occurs by the hot electron in solids. -
Enhanced Valley-Resolved Thermoelectric Transport in a Magnetic Silicene Superlattice
Home Search Collections Journals About Contact us My IOPscience Enhanced valley-resolved thermoelectric transport in a magnetic silicene superlattice This content has been downloaded from IOPscience. Please scroll down to see the full text. 2015 New J. Phys. 17 073026 (http://iopscience.iop.org/1367-2630/17/7/073026) View the table of contents for this issue, or go to the journal homepage for more Download details: IP Address: 62.204.246.50 This content was downloaded on 13/08/2015 at 09:21 Please note that terms and conditions apply. New J. Phys. 17 (2015) 073026 doi:10.1088/1367-2630/17/7/073026 PAPER Enhanced valley-resolved thermoelectric transport in a magnetic OPEN ACCESS silicene superlattice RECEIVED 19 April 2015 Zhi Ping Niu, Yong Mei Zhang and Shihao Dong REVISED College of Science, Nanjing University of Aeronautics and Astronautics, Jiangsu 210016, Peopleʼs Republic of China 8 June 2015 ACCEPTED FOR PUBLICATION E-mail: [email protected] 18 June 2015 Keywords: valleytronics, magnetic silicene superlattice, thermoelectric transport PUBLISHED 22 July 2015 Content from this work Abstract may be used under the Electrons in two-dimensional crystals with a honeycomb lattice structure possess a valley degree of terms of the Creative Commons Attribution 3.0 freedom in addition to charge and spin, which has revived the field of valleytronics. In this work we licence. investigate the valley-resolved thermoelectric transport through a magnetic silicene superlattice. Since Any further distribution of this work must maintain spin is coupled to the valley, this device allows a coexistence of the insulating transmission gap of one attribution to the author(s) and the title of valley and the metallic resonant band of the other, resulting in a strong valley polarization Pv. -
The VOI-Based Valleytronics
The VOI-Based Valleytronics G. Y. Wu,1,2,* N.-Y. Lue,1 and Y.-C. Chen,1 Abstract We discuss the valley-orbit interaction (VOI) and the concept of VOI based valleytronics. Potential of such valleytronics is illustrated, with graphene as an example material, in several frontier applications comprising FETs, quantum computing, and quantum communications. Two important devices are discussed as examples, namely, 1) valley pair qubits in coupled graphene quantum dots, to build quantum networks consisting of graphene and photons, and 2) valley- based FETs consisting of graphene quantum wires (channels) and armchair graphene nanoribbons (sources and drains), to build graphene-based, low-power FET circuits. This demonstration makes the VOI-based valleytronics an attractive R & D direction in the area of electronics. 1 Department of Physics, National Tsing-Hua University, Hsin-Chu, Taiwan 30013 2Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan 30013 * Email: [email protected] PACS numbers: 85.35.-p, 72.80.Vp, 73.63.Nm, 03.67.Lx, 03.67.Hk, 85.30.Tv 1 I. Introduction The emerging graphene[1] has provided an exciting continent of physics for exploration[1-4] and, as a promising future electronic material, numerous interesting possibilities for frontier applications. In particular, it has opened the door to implement a new realm of electronics, namely, valleytronics, based on the valley degree of freedom[5] in electrons for the control of electrical properties[5-16]. Valley filtering (or polarization)[5-12,15], magnetic effects[6,7], and devices[5,9,13-16] have been explored or proposed. -
A Theoretical Study of Quantum Memories in Ensemble-Based Media
A theoretical study of quantum memories in ensemble-based media Karl Bruno Surmacz St. Hugh's College, Oxford A thesis submitted to the Mathematical and Physical Sciences Division for the degree of Doctor of Philosophy in the University of Oxford Michaelmas Term, 2007 Atomic and Laser Physics, University of Oxford i A theoretical study of quantum memories in ensemble-based media Karl Bruno Surmacz, St. Hugh's College, Oxford Michaelmas Term 2007 Abstract The transfer of information from flying qubits to stationary qubits is a fundamental component of many quantum information processing and quantum communication schemes. The use of photons, which provide a fast and robust platform for encoding qubits, in such schemes relies on a quantum memory in which to store the photons, and retrieve them on-demand. Such a memory can consist of either a single absorber, or an ensemble of absorbers, with a ¤-type level structure, as well as other control ¯elds that a®ect the transfer of the quantum signal ¯eld to a material storage state. Ensembles have the advantage that the coupling of the signal ¯eld to the medium scales with the square root of the number of absorbers. In this thesis we theoretically study the use of ensembles of absorbers for a quantum memory. We characterize a general quantum memory in terms of its interaction with the signal and control ¯elds, and propose a ¯gure of merit that measures how well such a memory preserves entanglement. We derive an analytical expression for the entanglement ¯delity in terms of fluctuations in the stochastic Hamiltonian parameters, and show how this ¯gure could be measured experimentally. -
Graphene-Based Spintronic Components
Graphene-Based Spintronic Components Minggang Zeng,†,‡ Lei Shen,∗,† Haibin Su,¶,§ Miao Zhou,† Chun Zhang,†,∥ and Yuanping Feng∗,† Department of Physics, 2 Science Drive 3, National University of Singapore, Singapore 117542, Singapore, NanoCore, 5A Engineering Drive 4, National University of Singapore, Singapore 117576, Singapore, Division of Materials Science, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore, Institute of High Performance Computing, 1 Fusionopolis Way, Connexis 138632, Singapore, and Department of Chemistry, 3 Science Drive 3, National University of Singapore, Singapore 117543, Singapore E-mail: [email protected] ; [email protected] Abstract A major challenge of spintronics is in generating, controlling and detecting spin-polarized current. Manipulation of spin-polarized current, in particular, is difficult. We demonstrate here, based on calculated transport properties of graphene nanoribbons, that nearly ±100 % spin-polarized current can be generated in zigzag graphene nanoribbons (ZGNRs) and tuned by a source-drain voltage in the bipolar spin diode, in addition to magnetic configurations of the electrodes. This unusual transport property is attributed to the intrinsic transmission selection rule of the spin subbands near the Fermi level in ZGNRs. The simultaneous control of spin current by the bias voltage and the magnetic configurations of the electrodes provides an opportunity to implement a whole range of spintronics devices. We propose theoretical designs for a complete set of basic spintronic devices, including bipolar spin diode, transistor and logic gates, based on ZGNRs. Graphical TOC Introduction Spintronics, a new type of electronics that seeks to exploit the spin degree of freedom of an electron in addition to its charge, offers one of the most promising solutions for future high operating speed and energy-saving electronic devices.1 The major challenge of spintronics is the difficulty in generating, controlling and detecting spin-polarized current. -
Lecture Notes
Solid State Physics PHYS 40352 by Mike Godfrey Spring 2012 Last changed on May 22, 2017 ii Contents Preface v 1 Crystal structure 1 1.1 Lattice and basis . .1 1.1.1 Unit cells . .2 1.1.2 Crystal symmetry . .3 1.1.3 Two-dimensional lattices . .4 1.1.4 Three-dimensional lattices . .7 1.1.5 Some cubic crystal structures ................................ 10 1.2 X-ray crystallography . 11 1.2.1 Diffraction by a crystal . 11 1.2.2 The reciprocal lattice . 12 1.2.3 Reciprocal lattice vectors and lattice planes . 13 1.2.4 The Bragg construction . 14 1.2.5 Structure factor . 15 1.2.6 Further geometry of diffraction . 17 2 Electrons in crystals 19 2.1 Summary of free-electron theory, etc. 19 2.2 Electrons in a periodic potential . 19 2.2.1 Bloch’s theorem . 19 2.2.2 Brillouin zones . 21 2.2.3 Schrodinger’s¨ equation in k-space . 22 2.2.4 Weak periodic potential: Nearly-free electrons . 23 2.2.5 Metals and insulators . 25 2.2.6 Band overlap in a nearly-free-electron divalent metal . 26 2.2.7 Tight-binding method . 29 2.3 Semiclassical dynamics of Bloch electrons . 32 2.3.1 Electron velocities . 33 2.3.2 Motion in an applied field . 33 2.3.3 Effective mass of an electron . 34 2.4 Free-electron bands and crystal structure . 35 2.4.1 Construction of the reciprocal lattice for FCC . 35 2.4.2 Group IV elements: Jones theory . 36 2.4.3 Binding energy of metals . -
Emerging Spintronics Phenomena and Applications
Emerging spintronics phenomena and applications Rahul Mishra and Hyunsoo Yang * Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore Development of future sensor, memory, and computing nanodevices based on novel physical concepts is one of the significant research endeavors in solid-state research. The field of spintronics is one such promising area of nanoelectronics which utilizes both the charge and spin of an electron for device operations. The advantage offered by spin systems is in their non-volatility and low- power functionality. This paper reviews emerging spintronic phenomena and the research advancements in diverse spin based applications. Spin devices and systems for logic, memories, emerging computing schemes, flexible electronics and terahertz emitters are discussed in this report. *[email protected] 1 I. Introduction Conventional sensor, memory, and computing electronics exploit the charge of an electron for their operations. However, along with charge, an electron is also characterized by its spin angular momentum or spin. It is the spin of an electron that manifests in the form of magnetism that we see in magnetic objects of the macro world. In the information technology age, magnetism has found industry applications in the massive digital data storage. The field of spintronics is centered on electron’s spin in conjunction with its charge. As we near the end of a several decade scaling of CMOS technologies due to fundamental physical limitations, utilizing the degree of spin freedom might be a natural choice for next generation technologies. An external energy source is not required for maintaining a particular spin- or magnetic-state in a spintronic device. -
Dimensionality and Anisotropicity Dependence of Radiative Recombination in Nanostructured Phosphorene
Journal of Materials Chemistry C Dimensionality and Anisotropicity Dependence of Radiative Recombination in Nanostructured Phosphorene Journal: Journal of Materials Chemistry C Manuscript ID TC-ART-04-2019-002214.R1 Article Type: Paper Date Submitted by the 28-May-2019 Author: Complete List of Authors: Wu, Feng; University of California Santa Cruz Rocca, Dario; Universite de Lorraine Ecole Doctorale LTS Ping, Yuan; University of California Santa Cruz, Chemistry and Biochemistry Page 1 of 8 Journal of Materials Chemistry C Dimensionality and Anisotropicity Dependence of Ra- diative Recombination in Nanostructured Phospho- rene Feng Wua, Dario Roccab and Yuan Ping∗c The interplay between dimensionality and anisotropicity leads to intriguing optoelectronic prop- erties and exciton dynamics in low dimensional semiconductors. In this study we use nanos- tructured phosphorene as a prototypical example to unfold such complex physics and develop a general first-principles framework to study exciton dynamics in low dimensional systems. Specif- ically we derived the radiative lifetime and light emission intensity from 2D to 0D systems based on many body perturbation theory, and investigated the dimensionality and anisotropicity effects on radiative recombination lifetime both at 0 K and finite temperature, as well as polarization and angle dependence of emitted light. We show that the radiative lifetime at 0 K increases by an order of 103 with the lowering of one dimension (i.e. from 2D to 1D nanoribbons or from 1D to 0D quantum dots). We also show that obtaining the radiative lifetime at finite temperature requires accurate exciton dispersion beyond the effective mass approximation. Finally, we demonstrate that monolayer phosphorene and its nanostructures always emit linearly polarized light consistent with experimental observations, different from in-plane isotropic 2D materials like MoS2 and h-BN that can emit light with arbitrary polarization, which may have important implications for quantum information applications. -
Introduction to the Physical Properties of Graphene
Introduction to the Physical Properties of Graphene Jean-No¨el FUCHS Mark Oliver GOERBIG Lecture Notes 2008 ii Contents 1 Introduction to Carbon Materials 1 1.1 TheCarbonAtomanditsHybridisations . 3 1.1.1 sp1 hybridisation ..................... 4 1.1.2 sp2 hybridisation – graphitic allotopes . 6 1.1.3 sp3 hybridisation – diamonds . 9 1.2 Crystal StructureofGrapheneand Graphite . 10 1.2.1 Graphene’s honeycomb lattice . 10 1.2.2 Graphene stacking – the different forms of graphite . 13 1.3 FabricationofGraphene . 16 1.3.1 Exfoliatedgraphene. 16 1.3.2 Epitaxialgraphene . 18 2 Electronic Band Structure of Graphene 21 2.1 Tight-Binding Model for Electrons on the Honeycomb Lattice 22 2.1.1 Bloch’stheorem. 23 2.1.2 Lattice with several atoms per unit cell . 24 2.1.3 Solution for graphene with nearest-neighbour and next- nearest-neighour hopping . 27 2.2 ContinuumLimit ......................... 33 2.3 Experimental Characterisation of the Electronic Band Structure 41 3 The Dirac Equation for Relativistic Fermions 45 3.1 RelativisticWaveEquations . 46 3.1.1 Relativistic Schr¨odinger/Klein-Gordon equation . ... 47 3.1.2 Diracequation ...................... 49 3.2 The2DDiracEquation. 53 3.2.1 Eigenstates of the 2D Dirac Hamiltonian . 54 3.2.2 Symmetries and Lorentz transformations . 55 iii iv 3.3 Physical Consequences of the Dirac Equation . 61 3.3.1 Minimal length for the localisation of a relativistic par- ticle ............................ 61 3.3.2 Velocity operator and “Zitterbewegung” . 61 3.3.3 Klein tunneling and the absence of backscattering . 61 Chapter 1 Introduction to Carbon Materials The experimental and theoretical study of graphene, two-dimensional (2D) graphite, is an extremely rapidly growing field of today’s condensed matter research. -
Arxiv:1707.02465V2 [Cond-Mat.Mes-Hall] 28 Jun 2018 Ri Opig(O)Adaszbegpo 1 Spin- of Its Gap Large Sizable a Recently
Strain-controlled valley and spin separation in silicene heterojunctions Yuan Li1,2,∗ H. B. Zhu1, G. Q. Wang1, Y. Z. Peng1, J. R. Xu1, Z. H. Qian2, R. Bai2, G. H. Zhou3, C. Yesilyurt4, Z. B. Siu4, and M. B. A. Jalil4† 1Department of Physics, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China 2Center for Integrated Spintronic Devices (CISD), Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China 3Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Hunan Normal University, Changsha 410081, China and 4 Computational Nanoelectronics and Nano-device Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore (Dated: October 1, 2018) We adopt the tight-binding mode-matching method to study the strain effect on silicene hetero- junctions. It is found that valley and spin-dependent separation of electrons cannot be achieved by the electric field only. When a strain and an electric field are simultaneously applied to the central scattering region, not only are the electrons of valleys K and K’ separated into two distinct transmission lobes in opposite transverse directions, but the up-spin and down-spin electrons will also move in the two opposite transverse directions. Therefore, one can realize an effective modu- lation of valley and spin-dependent transport by changing the amplitude and the stretch direction of the strain. The phenomenon of the strain-induced valley and spin deflection can be exploited for silicene-based valleytronics devices. PACS numbers: 73.63.-b, 71.70.Ej, 71.70.Fk, 73.22.-f I. -
Operation-Induced Decoherence by Nonrelativistic Scattering from a Quantum Memory
INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS A: MATHEMATICAL AND GENERAL J. Phys. A: Math. Gen. 39 (2006) 11567–11581 doi:10.1088/0305-4470/39/37/015 Operation-induced decoherence by nonrelativistic scattering from a quantum memory D Margetis1 and J M Myers2 1 Department of Mathematics, and Institute for Physical Science and Technology, University of Maryland, College Park, MD 20742, USA 2 Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA E-mail: [email protected] and [email protected] Received 16 June 2006, in final form 7 August 2006 Published 29 August 2006 Online at stacks.iop.org/JPhysA/39/11567 Abstract Quantum computing involves transforming the state of a quantum memory. We view this operation as performed by transmitting nonrelativistic (massive) particles that scatter from the memory. By using a system of (1+1)- dimensional, coupled Schrodinger¨ equations with point interaction and narrow- band incoming pulse wavefunctions, we show how the outgoing pulse becomes entangled with a two-state memory. This effect necessarily induces decoherence, i.e., deviations of the memory content from a pure state. We describe incoming pulses that minimize this decoherence effect under a constraint on the duration of their interaction with the memory. PACS numbers: 03.65.−w, 03.67.−a, 03.65.Nk, 03.65.Yz, 03.67.Lx 1. Introduction Quantum computing [1–4] relies on a sequence of operations, each of which transforms a pure quantum state to, ideally, another pure state. These states describe a physical system, usually called memory. A central problem in quantum computing is decoherence, in which the pure state degrades to a mixed state, with deleterious effects for the computation.