Valley-reversible Berry phase effects in 2D valley-half-semiconductors

Xiaodong Zhou,1, 2, ∗ Run-Wu Zhang,1, 2, ∗ Zeying Zhang,3, ∗ Wanxiang Feng,1, 2, † Yuriy Mokrousov,4, 5 and Yugui Yao1, 2 1Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China 2Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China 3College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China 4Peter Gr¨unberg Institut and Institute for Advanced Simulation, Forschungszentrum J¨ulichand JARA, 52425 J¨ulich, Germany 5Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany (Dated: June 17, 2021) Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications. Here, by referring to effective model analysis, we propose a general scheme for realizing topological magneto-valley phase transitions. More im- portantly, by using valley-half-semiconducting VSi2N4 as an outstanding example, we investigate valley-reversible Berry phase effects which drive the change-in-sign valley anomalous transport char- acteristics via external means such as biaxial strain, electric field, and correlation effects. As a result, this gives rise to quantized versions of valley anomalous transport phenomena. Our findings not only uncover a general framework to control valley degree of freedom, but also motivate further research in the direction of multifunctional quantum devices in valleytronics and spintronics.

Introduction.— Recent advances in valleytronics are ley materials [3, 10–14] and the difficulty in characteriz- mainly based on the paradigm of time-reversal-connected ing the magnetic ordering and topological phase tran- valleys, which generates valley polarization by an exter- sitions, high-quality magneto-valley material candidates nal field, dynamically or statically [1,2]. However, for with a wide range of phase transitions have been scarcely achieving widespread applications of valleytronics, intrin- discussed. On the other hand, an interplay between dif- sic properties are to be prioritized higher than external ferent phase transitions accompanied by distinct valley tunability. More importantly, intrinsic valleytronics ma- anomalous transport manifestations in such materials has terials hosting spontaneous valley polarization are most not been seriously considered yet, which poses a great desirable, owing to their advantages of robustness, power challenge for the research on potential high-performance efficiency, and simplicity in operation. In this regard, valleytronics devices. alternatives to the existing paradigms are intensively A crucial but thought-provoking issue for magneto- sought after. Recently, the proposal of two-dimensional valley coupling (MVC) is finding a way to effectively gen- (2D) ferrovalley materials has laid out a new magneto- erate spontaneous valley polarization utilizing the spin valleytronics composite paradigm based on spontaneous degree of freedom, and thereby lead to a revolution in valley polarization induced by the integrated effects of magneto-valley-based information storage and operation magnetic order and spin-orbit coupling (SOC), which principles. To tackle current challenges of valleytronics, can radically reduce additional costs of the applied ex- we break out present ferrovalley paradigm to provide a ternal fields [3]. Specifically, when valley couples with general classification of MVC states through an effective intrinsic ferromagnetic (FM) order, the valley-dependent model analysis, where the low energy electronic inter- Berry phase effects can generate emergent valley anoma- valley nature enjoys a giant valley splitting with fully lous transport phenomena − e.g., valley Hall effect [4– spin-polarized fermions. Consistent with the model, as 7] and valley Nernst effect [8,9]) − making it possible a concrete example, VSi N showcases emerging MVC to realize high-performance quantum devices thus rais- 2 4 phases − including valley-half-semiconductor (VHSC), ing an intensive interest in materials systems which host valley-half-semimetal (VHSM) as well as valley quantum magneto-valley traits. arXiv:2106.06379v2 [cond-mat.mes-hall] 16 Jun 2021 anomalous Hall (VQAH) states − transitions between which can be controlled by using external stimuli such as From the perspective of potential applications in val- biaxial strain, electric field and correlation effects. Re- leytronics, exploring various phase transitions in 2D markably, we find that topological phase transitions with magneto-valley materials has played a vital role in pro- MVC can exhibit valley-dependent Berry phase effects moting our understanding, discovery and characteriza- which manifest in prominent valley-reversible anomalous tion of new quantum states of matter. A general law of transport fingerprints. phase transitions is that they can drive not only novel quantum states but also intriguing physical properties. Valley-half-semiconductors and their topological phase However, possibly due to the fewer number of 2D ferroval- transitions.— According to the relationship between the 2

ically nontrival phases can be analytically written as, √ √ 1 3 3r 3 3r |C| = | (Sign(e − 2 ) − Sign(e + 2 ))|. (2) 2 1 2 1 2 For our model, Fig.1(a) schematically shows that K and K0 valleys bare semiconductor characteristics with full spin-polarization in the same spin channel. Such a VHSC state is highly promising for generating, transport- ing, and manipulating spin currents in spin-valleytronics. Topological phase transitions starting from the VHSC state can be realized by changing the model parameters r2 and e1 simultaneously. When the band gap at K valley decreases, the other one at K0 valley is reduced as well. FIG. 1. Schematic diagrams of valley-related topological During the transition, a critical state, namely the VHSM phase transition in a 2D triangular lattice with magnetic space state, is inevitably encountered [Fig.1(b)]: it is gapless 0 0 group P 6¯m 2 . The balanced system is a VHSC state (a), at K0 valley but it is gapped at K valley. The gapless which exhibits valley polarization and full spin-polarization 0 crossing point is two-fold degenerate with a linear dis- simultaneously. With increasing the parameter e1,K and K valleys close successively at the critical points e and e persion, similar to that of Weyl semimetals. In Fig.1(c), c1 c2 0 respectively, corresponding to the VHSM states (b,d). The the gap reopening at K valley indicates a topological VQAH state (c) is expected between two VHSM states. Be- phase transition, and the VQAH state is confirmed by a yond ec2, the gap at K valley reopens and the VHSC state nonzero Chern number (C = 1). Further increasing the restores (e). A phase diagram as a function of the model parameter e1 will force K valley to first close the gap and parameters r2 and e1 (r1 = 2) is summarized in (f). then reopen it again, as shown in Figs.1(d) and1(e). The summary of topological phase transitions is shown in Fig.1(f). Note that the SOC has been taken into ac- valence band maximum (VBM) and conduction band count in our model [16], and therefore the emergence of minimum (CBM) of the same spin channel at the Fermi MVC states having 100% spin polarization is remarkable level, MVC gives rise to a wide spectrum of quantum and promising for spin-valleytronics [17–20]. phase transitions ranging from gapped to gapless ones. A unique interplay between valley degree of freedom, To better capture the key physics underlying topological magnetism, and topology provides an excellent platform phase transitions, we construct a simple tight-binding for researching valley-related anomalous transport prop- (TB) model for describing the topological phase tran- erties of MVC states, realizing a rich set of exotic quan- sitions of MVC states. Without loss of generality, we tum phenomena, such as valley anomalous Hall effect take a 2D triangular lattice with magnetic space group (VAHE), valley anomalous Nernst effect (VANE), as well P 6¯m020 as an example, and assume that the direction of as valley magneto-optical Kerr effect (VMOKE) and val- the spins of magnetic atoms is parallel to the z-axis (i.e., ley magneto-optical Faraday effect (VMOFE). Specifi- out of the plane). To conveniently describe the atomic cally, pursuing a single material that simultaneously ex- 0 0 basis of P 6¯m 2 symmetry, the minimal set of |dx2−y2 ↑i hibits topological phase transitions and valley-reversible and |dxy ↑i (or |px ↑i and |py ↑i) orbitals is taken as the Berry phase effects has been rarely done to date, although basis in our TB model. The Hamiltonian containing only such a material would be highly valuable for the multi- the nearest-neighbour hopping reads: functional miniaturized devices. In addition to consid- ering artificially constructed MVC heterostructures, an X alternative is to seek intrinsic MVC materials that can H = tαβc† c + H.c., (1) ij iα jβ harbor topological phase transitions driven by external hijiαβ means, such as biaxial strain, electric field, and correla- tion effects. † where ciα (cjβ) is the electron creation (annihilation) op- High-quality candidate materials.— In this work not erator for the orbital α (β) on site i (j). By using the only do we provide a classification of MVC states, MagneticTB package [15] that was recently developed but also propose a series of MVC materials [Figs.2(a) to incorporate the group representation theory, all in- and2(b)], including 2D ferromagnetic VSi 2N4 as well as αβ dependent nearest-neighbour hopping integrals tij can other eleven MA2Z4 (M=V, Nb; A=Si, Ge; Z=N, P, As) be screened under a given symmetry constraint. Under candidates [21, 22]. All these candidate materials form on magnetic space group of P 6¯m020, the topological phase a hexagonal lattice with the same magnetic space group transitions of MVC states can be achieved with only three that has been employed above. While aforementioned parameters (r1, r2, and e1, see the Supplemental Mate- MVC states and their topological phase transitions exist rial [16]). The Chern number for characterizing topolog- in all materials, below we focus on one representative − 3

FIG. 2. (a-b) The top and side views of MA2Z4 materials family. The dashed lines in (a) indicate the 2D primitive cell. (c) The Brillouin zone of MA2Z4. (d) The band structures of VSi2N4 calculated by the hybrid functional without SOC (left panel) and with SOC (right panel). (e) The stress-strain curve of VSi2N4. Top x-axis plots the whole strain range of 0% ∼ 30%, while bottom x-axis plots the small strain range of 0% ∼ 3%. The colors indicate the magnitudes of the band gap, and the corresponding Chern number (C) is marked. The evolution of band structure (f) and orbital compositions at band edge (g) under the strain of 0% ∼ 2%. Various fully spin-polarized valley topological states emerges, including VHSC (0%), VHSM (1.4%), VQAH (1.6%), VHSM (1.75%), and VHSC (2%).

VSi2N4 − and discuss the rest of materials in the Sup- correlation effects are shown in Figs. S5 and S6 [16]), we plemental Material (see Figs. S1 and S2) [16]. predict strained VSi2N4 to exhibit various MVC states, covering VHSC, VHSM, and VQAH states. As shown in The electronic band structure of VSi N , which is a 2 4 Fig.2(f), by increasing strain within a reasonable range fully spin-polarized semiconductor with a small direct (0% ∼ 2%), the VHSC state (0%) undergoes topologi- band gap (0.24 eV) at K/K0 valley in spin up channel cal phase transitions that can be identified by the clos- and with a large indirect band gap (3.19 eV) in spin down ing and reopening of band gaps at K0 and K valleys, channel, is shown in Fig.2(d). When SOC is taken into resulting in the VHSM (1.4%), VQAH (1.6%), VHSM account, VSi N evolves into a novel VHSC state with 2 4 (1.75%), and VHSC (2%) states. The gap evolution to- a giant valley splitting of 102.3 (27.3) meV at the va- gether with corresponding Chern numbers is summarized lence (conduction) band edge. More importantly, VSi N 2 4 in Fig.2(e). Furthermore, the orbital-projected band possesses an “ultra-clean” linear band dispersion around structures of MVC states [Fig.2(g)] are another indi- K and K0 valleys in the energy range of [−0.7, +1.2] cator for topological phase transitions. In the balanced eV, which suppresses the influence of irrelevant trivial state of VSi N , the VBM is dominated by the d and bands for valley performance. The linear band disper- 2 4 xy d 2 2 orbitals of V atoms, and the CBM mainly comes sion ensures high Fermi velocity of about 0.4 − 0.5 × 106 x −y from the d 2 orbital. At the strain of 1.4%, the orbital m/s along different momentum directions, which is of z compositions reverse at K0 valley, driving the system into the same order as that of graphene [23]. This promotes the VQAH state; further increasing strain to 1.75%, the VSi N into one of the most appealing candidates when 2 4 orbital inversion occurs also at K valley, restoring the comparing it with currently considered ferrovalley mate- system to the VHSC state. rials.

While VSi2N4 is a unique long-sought VHSC mate- Valley-reversible Berry phase effects.— An in-depth rial, it can also host various fully spin-polarized MVC investigation of MVC topological phase transitions pro- topological states under external means such as biaxial vides a platform for exploring valley-related anomalous strain, electric field, and correlation effects. Taking bi- transport phenomena. In this context, it is remarkable axial strain as an example (the cases of electric field and that VSi2N4, while hosting topological phase transitions, 4

VAHE is calculated by the integration of Ω(k) in a small region centered at each valley, the sign changes of VAHE are in full accordance with Ω(k) during the topologi- cal phase transitions. This is also the case for VANE as well as VMOKE and VMOFE. The former is calcu- lated by integrating the Berry curvature together with a weighting factor around each valley (see Eq. S2 of Supplemental Material). The latter phenomenon can be actually regarded as the ac counterpart of VAHE. Phys- ically, these anomalous transport phenomena are inti- mately related to each other. Therefore, the change in their signs strongly depends on the nature of topologi- cal phase transitions, exhibiting exotic valley-reversible Berry phase effects. Interestingly, due to the different magnitudes of Ω(k) at two valleys, a net fully spin-polarized valley current is produced by the anomalous Hall, anomalous Nernst, and magneto-optical effects. Notably, the VQAH phase emerges during the phase transition, accompanied by a 2 quantized anomalous Hall conductivity σxy = e /h [sec- ond row of Fig.3(b)]. Besides, one can utilize the non- contact magneto-optical technique [24–26] to detect this topological phase [27–30]. For a VQAH state, the cen- tral physical idea is that the Maxwell’s equations have 2 FIG. 3. Valley-related anomalous transport properties of to be modified by adding an axion term (Θα/4π )E·B 2 VSi2N4. The Berry curvature Ω(k) (first row), VAHE (sec- (here Θ is magnetoelectric polarizability and α = e /~c ond row), VANE (third row), and VMOKE (fourth row) un- is fine structure constant) into the usual Lagrangian [31]. der three different strains of 0% (a), 1.6% (b), and 2% (c), In this way, the magneto-optical Kerr (θK ) and Faraday respectively. The results of VMOFE (not shown here) are (θF ) rotation angles turn out to be quantized in the low- rather similar to that of VMOKE. The unit of VANE is set frequency limit, that is, θK ' −π/2 and θF 'Cα (C is to be α0 = kB e/h (e is the elementary charge, kB and h the Chern number) [32, 33]. In the bottom of Fig.3(b), are Boltzmann and Planck constants, respectively). Yellow shaded areas indicate the regions of large valley splitting. The one can clearly observe the quantization behavior of θK Berry curvature is plotted at the energy where the anomalous and θF in the low-frequency limit. Hall conductivity reaches to its maximum. The legends of K, Generally, the tunable sign of Ω(k) has been witnessed K0, and TOT represent contributions from K valley, K0 valley, by reversing the magnetization [3] and ferroelectric polar- and the entire Brillouin zone, respectively. ization [34]. However, these two means seem to be sub- optimal and often suffer from various drawbacks, making it difficult to utilize this effect. As an alternative av- exhibits also valley-reversible Berry phase effects. Re- enue, the manipulation by a small biaxial strain is more garding the VHSC state (0%), for which the calculated suitable for practical purposes. It is worth noting that k-resolved Berry curvature Ω(k) is shown in Fig.3(a), topological phase transitions through biaxial strain may one can clearly identify the hot spots in the Berry cur- not only change the sign of anomalous transport charac- vature around two valleys with opposite signs and dif- teristics but also modify their magnitude, and more im- ferent magnitudes. By introducing a tiny biaxial strain, portantly, the mediated quantization of transport char- the VHSC state experiences a topological phase transi- acteristics is indispensable for experimental observation. tion into the VQAH state, bridged by the VHSM state. Conclusion.— In this Letter, we introduce a general Within the strain of 1.4% ∼ 1.6%, the sign of Ω(k) at framework to realize topological magneto-valley phase K0 valley flips [Fig.3(b)]. Further increasing strain from transitions in 2D VHSC, and we propose a series of feasi- 1.6% to 2%, K valley also experiences a topological phase ble candidate materials harboring novel valley-reversible transition, akin to the case of K0 valley, resulting in the Berry phase effects, which are triggered by external sign change of Ω(k) at K valley [Fig.3(c)]. Such dy- means such as biaxial strain, electric field, and correlation namics of Ω(k) is bound to influence the valley-related effects. Taking VSi2N4 as a representative, we demon- anomalous transport phenomena such as VAHE, VANE, strate that such intrinsic VHSC states display unique VMOKE, and VMOFE. fully spin-polarized valley index. The proposal of valley- Our predictions concerning the valley-related anoma- reversible Berry phase effects and high-quality materi- lous transport phenomena are presented in Fig.3. Since als realization greatly expand the ferrovalley family and 5 provide an exciting playground for spintronics and val- arXiv:2105.09504 (2021). leytronics applications. [16] See Supplemental Material at http://link.aps.org/xxx, This work is supported by the National Key R&D which includes a detailed description of the first- Program of China (Grant No. 2020YFA0308800), the principles calculations, tight-binding model, as well as supplemental data and figures. National Natural Science Foundation of China (Grant [17] R.-W. Zhang, Z. Zhang, C.-C. Liu, and Y. Yao, Phys. Nos. 11734003, 11874085, 12047512, and 12004028), and Rev. Lett 124, 016402 (2020). the Project Funded by China Postdoctoral Science Foun- [18] B. Feng, R.-W. Zhang, Y. Feng, B. Fu, S. Wu, dation (Grant Nos. 2020M680011 and 2021T140057). K. Miyamoto, S. He, L. Chen, K. Wu, K. Shimada, Y.M. acknowledges the Deutsche Forschungsgemein- T. Okuda, and Y. Yao, Phys. Rev. Lett 123, 116401 schaft (DFG, German Research Foundation) − TRR 288 (2019). – 422213477 (project B06). Y.M., W.F., and Y.Y. ac- [19] X. Zhou, R.-W. Zhang, Z. Zhang, D.-S. Ma, W. Feng, knowledge the funding under the Joint Sino-German Re- Y. Mokrousov, and Y. Yao, J. Phys. Chem. Lett 10, 3101 (2019). search Projects (Chinese Grant No. 12061131002 & Ger- [20] R.-W. Zhang, D.-S. Ma, J.-M. Zhang, and Y. Yao, Phys. man Grant No. 1731/10-1) and the Sino-German Mobil- Rev. B 103, 195115 (2021). ity Programme (Grant No. M-0142). [21] Y.-L. Hong, Z. Liu, L. Wang, T. Zhou, W. Ma, C. Xu, S. Feng, L. Chen, M.-L. Chen, D.-M. Sun, X.-Q. Chen, H.-M. Cheng, and W. Ren, Science 369, 670 (2020). [22] K. S. Novoselov, Natl. Sci. Rev. 7, 1842 (2020). [23] S. Kim, I. Jo, D. C. Dillen, D. A. Ferrer, B. Fallahazad, ∗ These authors contributed equally to this work. Z. Yao, S. K. Banerjee, and E. Tutuc, Phys. Rev. Lett. † [email protected] 108, 116404 (2012). [1] X. Xu, W. Yao, D. Xiao, and T. F. Heinz, Nat. Phys. [24] V. Antonov, B. Harmon, and A. Yaresko, Electronic 10, 343 (2014). Structure and Magneto-Optical Properties of Solids [2] K. F. Mak, D. Xiao, and J. Shan, Nat. Photonics 12, (Kluwer Academic Publishers, Dordrecht, 2004) Chap. 451 (2018). 1.4. [3] W.-Y. Tong, S.-J. Gong, X. Wan, and C.-G. Duan, Nat [25] B. Huang, G. Clark, E. Navarro-Moratalla, D. R. Klein, Commun 7, 13612 (2016). R. Cheng, K. L. Seyler, D. Zhong, E. Schmidgall, M. A. [4] D. Xiao, W. Yao, and Q. Niu, Phys. Rev. Lett 99, 236809 McGuire, D. H. Cobden, W. Yao, D. Xiao, P. Jarillo- (2007). Herrero, and X. Xu, Nature 546, 270 (2017). [5] D. Xiao, G.-B. Liu, W. Feng, X. Xu, and W. Yao, Phys. [26] C. Gong, L. Li, Z. Li, H. Ji, A. Stern, Y. Xia, T. Cao, Rev. Lett 108, 196802 (2012). W. Bao, C. Wang, Y. Wang, Z. Q. Qiu, R. J. Cava, S. G. [6] K. F. Mak, K. L. McGill, J. Park, and P. L. McEuen, Louie, J. Xia, and X. Zhang, Nature 546, 265 (2017). Science 344, 1489 (2014). [27] L. Wu, M. Salehi, N. Koirala, J. Moon, S. Oh, and N. P. [7] J. Lee, K. F. Mak, and J. Shan, Nat. Nanotechnol. 11, Armitage, Science 354, 1124 (2016). 421 (2016). [28] K. N. Okada, Y. Takahashi, M. Mogi, R. Yoshimi, [8] X.-Q. Yu, Z.-G. Zhu, G. Su, and A. P. Jauho, Phys. Rev. A. Tsukazaki, K. S. Takahashi, N. Ogawa, M. Kawasaki, Lett 115, 246601 (2015). and Y. Tokura, Nat. Commun. 7, 12245 (2016). [9] M. T. Dau, C. Vergnaud, A. Marty, C. Beign´e,S. Gam- [29] A. Shuvaev, V. Dziom, Z. D. Kvon, N. N. Mikhailov, and barelli, V. Maurel, T. Journot, B. Hyot, T. Guillet, A. Pimenov, Phys. Rev. Lett. 117, 117401 (2016). B. Gr´evin,H. Okuno, and M. Jamet, Nat. Commun. [30] V. Dziom, A. Shuvaev, A. Pimenov, G. V. Astakhov, 10, 5796 (2019). C. Ames, K. Bendias, J. B¨ottcher, G. Tkachov, E. M. [10] X. Li, T. Cao, Q. Niu, J. Shi, and J. Feng, Proc. Natl. Hankiewicz, C. Br¨une, H. Buhmann, and L. W. Acad. Sci. (USA) 110, 3738 (2013). Molenkamp, Nat. Commun. 8, 15197 (2017). [11] Z. Song, X. Sun, J. Zheng, F. Pan, Y. Hou, M.-H. Yung, [31] X.-L. Qi, T. L. Hughes, and S.-C. Zhang, Phys. Rev. B J. Yang, and J. Lu, Nanoscale 10, 13986 (2018). 78, 195424 (2008). [12] P. Zhao, Y. Ma, C. Lei, H. Wang, B. Huang, and Y. Dai, [32] J. Maciejko, X.-L. Qi, H. D. Drew, and S.-C. Zhang, Appl. Phys. Lett. 115, 261605 (2019). Phys. Rev. Lett. 105, 166803 (2010). [13] H. Hu, W.-Y. Tong, Y.-H. Shen, X. Wan, and C.-G. [33] W.-K. Tse and A. H. MacDonald, Phys. Rev. Lett. 105, Duan, npj. Comput. Mater 6, 129 (2020). 057401 (2010). [14] R. Peng, Y. Ma, X. Xu, Z. He, B. Huang, and Y. Dai, [34] X. Liu, A. P. Pyatakov, and W. Ren, Phys. Rev. Lett. Phys. Rev. B 102, 035412 (2020). 125, 247601 (2020). [15] Z. Zhang, Z.-M. Yu, G.-B. Liu, and Y. Yao,