• Abstract and Figures
• Public Full-text

Valley-reversible Berry phase effects in 2D valley-half-semiconductors Xiaodong Zhou,1, 2, ∗ Run-Wu Zhang,1, 2, ∗ Zeying Zhang,3, ∗ Wanxiang Feng,1, 2, y Yuriy Mokrousov,4, 5 and Yugui Yao1, 2 1Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China 2Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China 3College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China 4Peter Gr¨unberg Institut and Institute for Advanced Simulation, Forschungszentrum J¨ulichand JARA, 52425 J¨ulich, Germany 5Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany (Dated: June 17, 2021) Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications. Here, by referring to effective model analysis, we propose a general scheme for realizing topological magneto-valley phase transitions. More im- portantly, by using valley-half-semiconducting VSi2N4 as an outstanding example, we investigate valley-reversible Berry phase effects which drive the change-in-sign valley anomalous transport char- acteristics via external means such as biaxial strain, electric field, and correlation effects. As a result, this gives rise to quantized versions of valley anomalous transport phenomena. Our findings not only uncover a general framework to control valley degree of freedom, but also motivate further research in the direction of multifunctional quantum devices in valleytronics and spintronics. Introduction.| Recent advances in valleytronics are ley materials [3, 10{14] and the difficulty in characteriz- mainly based on the paradigm of time-reversal-connected ing the magnetic ordering and topological phase tran- valleys, which generates valley polarization by an exter- sitions, high-quality magneto-valley material candidates nal field, dynamically or statically [1,2]. However, for with a wide range of phase transitions have been scarcely achieving widespread applications of valleytronics, intrin- discussed. On the other hand, an interplay between dif- sic properties are to be prioritized higher than external ferent phase transitions accompanied by distinct valley tunability. More importantly, intrinsic valleytronics ma- anomalous transport manifestations in such materials has terials hosting spontaneous valley polarization are most not been seriously considered yet, which poses a great desirable, owing to their advantages of robustness, power challenge for the research on potential high-performance efficiency, and simplicity in operation. In this regard, valleytronics devices. alternatives to the existing paradigms are intensively A crucial but thought-provoking issue for magneto- sought after. Recently, the proposal of two-dimensional valley coupling (MVC) is finding a way to effectively gen- (2D) ferrovalley materials has laid out a new magneto- erate spontaneous valley polarization utilizing the spin valleytronics composite paradigm based on spontaneous degree of freedom, and thereby lead to a revolution in valley polarization induced by the integrated effects of magneto-valley-based information storage and operation magnetic order and spin-orbit coupling (SOC), which principles. To tackle current challenges of valleytronics, can radically reduce additional costs of the applied ex- we break out present ferrovalley paradigm to provide a ternal fields [3]. Specifically, when valley couples with general classification of MVC states through an effective intrinsic ferromagnetic (FM) order, the valley-dependent model analysis, where the low energy electronic inter- Berry phase effects can generate emergent valley anoma- valley nature enjoys a giant valley splitting with fully lous transport phenomena − e.g., valley Hall effect [4{ spin-polarized fermions. Consistent with the model, as 7] and valley Nernst effect [8,9]) − making it possible a concrete example, VSi N showcases emerging MVC to realize high-performance quantum devices thus rais- 2 4 phases − including valley-half-semiconductor (VHSC), ing an intensive interest in materials systems which host valley-half-semimetal (VHSM) as well as valley quantum magneto-valley traits. arXiv:2106.06379v2 [cond-mat.mes-hall] 16 Jun 2021 anomalous Hall (VQAH) states − transitions between which can be controlled by using external stimuli such as From the perspective of potential applications in val- biaxial strain, electric field and correlation effects. Re- leytronics, exploring various phase transitions in 2D markably, we find that topological phase transitions with magneto-valley materials has played a vital role in pro- MVC can exhibit valley-dependent Berry phase effects moting our understanding, discovery and characteriza- which manifest in prominent valley-reversible anomalous tion of new quantum states of matter. A general law of transport fingerprints. phase transitions is that they can drive not only novel quantum states but also intriguing physical properties. Valley-half-semiconductors and their topological phase However, possibly due to the fewer number of 2D ferroval- transitions.| According to the relationship between the 2 ically nontrival phases can be analytically written as, p p 1 3 3r 3 3r jCj = j (Sign(e − 2 ) − Sign(e + 2 ))j: (2) 2 1 2 1 2 For our model, Fig.1(a) schematically shows that K and K0 valleys bare semiconductor characteristics with full spin-polarization in the same spin channel. Such a VHSC state is highly promising for generating, transport- ing, and manipulating spin currents in spin-valleytronics. Topological phase transitions starting from the VHSC state can be realized by changing the model parameters r2 and e1 simultaneously. When the band gap at K valley decreases, the other one at K0 valley is reduced as well. FIG. 1. Schematic diagrams of valley-related topological During the transition, a critical state, namely the VHSM phase transition in a 2D triangular lattice with magnetic space state, is inevitably encountered [Fig.1(b)]: it is gapless 0 0 group P 6¯m 2 . The balanced system is a VHSC state (a), at K0 valley but it is gapped at K valley. The gapless which exhibits valley polarization and full spin-polarization 0 crossing point is two-fold degenerate with a linear dis- simultaneously. With increasing the parameter e1,K and K valleys close successively at the critical points e and e persion, similar to that of Weyl semimetals. In Fig.1(c), c1 c2 0 respectively, corresponding to the VHSM states (b,d). The the gap reopening at K valley indicates a topological VQAH state (c) is expected between two VHSM states. Be- phase transition, and the VQAH state is confirmed by a yond ec2, the gap at K valley reopens and the VHSC state nonzero Chern number (C = 1). Further increasing the restores (e). A phase diagram as a function of the model parameter e1 will force K valley to first close the gap and parameters r2 and e1 (r1 = 2) is summarized in (f). then reopen it again, as shown in Figs.1(d) and1(e). The summary of topological phase transitions is shown in Fig.1(f). Note that the SOC has been taken into ac- valence band maximum (VBM) and conduction band count in our model [16], and therefore the emergence of minimum (CBM) of the same spin channel at the Fermi MVC states having 100% spin polarization is remarkable level, MVC gives rise to a wide spectrum of quantum and promising for spin-valleytronics [17{20]. phase transitions ranging from gapped to gapless ones. A unique interplay between valley degree of freedom, To better capture the key physics underlying topological magnetism, and topology provides an excellent platform phase transitions, we construct a simple tight-binding for researching valley-related anomalous transport prop- (TB) model for describing the topological phase tran- erties of MVC states, realizing a rich set of exotic quan- sitions of MVC states. Without loss of generality, we tum phenomena, such as valley anomalous Hall effect take a 2D triangular lattice with magnetic space group (VAHE), valley anomalous Nernst effect (VANE), as well P 6¯m020 as an example, and assume that the direction of as valley magneto-optical Kerr effect (VMOKE) and val- the spins of magnetic atoms is parallel to the z-axis (i.e., ley magneto-optical Faraday effect (VMOFE). Specifi- out of the plane). To conveniently describe the atomic cally, pursuing a single material that simultaneously ex- 0 0 basis of P 6¯m 2 symmetry, the minimal set of jdx2−y2 "i hibits topological phase transitions and valley-reversible and jdxy "i (or jpx "i and jpy "i) orbitals is taken as the Berry phase effects has been rarely done to date, although basis in our TB model. The Hamiltonian containing only such a material would be highly valuable for the multi- the nearest-neighbour hopping reads: functional miniaturized devices. In addition to consid- ering artificially constructed MVC heterostructures, an X alternative is to seek intrinsic MVC materials that can H = tαβcy c + H:c:; (1) ij iα jβ harbor topological phase transitions driven by external hijiαβ means, such as biaxial strain, electric field, and correla- tion effects. y where ciα (cjβ) is the electron creation (annihilation) op- High-quality candidate materials.| In this work not erator for the orbital α (β) on site i (j). By using the only do we provide a classification of MVC states, MagneticTB package [15] that was recently developed but also propose a series of MVC materials [Figs.2(a) to incorporate the group representation theory, all in- and2(b)], including 2D ferromagnetic VSi 2N4 as well as αβ dependent nearest-neighbour hopping integrals tij can other eleven MA2Z4 (M=V, Nb; A=Si, Ge; Z=N, P, As) be screened under a given symmetry constraint. Under candidates [21, 22]. All these candidate materials form on magnetic space group of P 6¯m020, the topological phase a hexagonal lattice with the same magnetic space group transitions of MVC states can be achieved with only three that has been employed above.

Load more

  5

Copy Link