Strain-controlled valley and spin separation in silicene heterojunctions Yuan Li1,2,∗ H. B. Zhu1, G. Q. Wang1, Y. Z. Peng1, J. R. Xu1, Z. H. Qian2, R. Bai2, G. H. Zhou3, C. Yesilyurt4, Z. B. Siu4, and M. B. A. Jalil4† 1Department of Physics, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China 2Center for Integrated Spintronic Devices (CISD), Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China 3Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Hunan Normal University, Changsha 410081, China and 4 Computational Nanoelectronics and Nano-device Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore (Dated: October 1, 2018) We adopt the tight-binding mode-matching method to study the strain effect on silicene hetero- junctions. It is found that valley and spin-dependent separation of electrons cannot be achieved by the electric field only. When a strain and an electric field are simultaneously applied to the central scattering region, not only are the electrons of valleys K and K’ separated into two distinct transmission lobes in opposite transverse directions, but the up-spin and down-spin electrons will also move in the two opposite transverse directions. Therefore, one can realize an effective modu- lation of valley and spin-dependent transport by changing the amplitude and the stretch direction of the strain. The phenomenon of the strain-induced valley and spin deflection can be exploited for silicene-based valleytronics devices. PACS numbers: 73.63.-b, 71.70.Ej, 71.70.Fk, 73.22.-f I. INTRODUCTION cantly modulated by applying a strain in silicene sys- tems [22, 23]. The strain-induced band gap of silicene Silicene, a low-buckled monolayer-honeycomb lattice structures can reach the maximum value of 0.08eV [24]. of silicon atoms, has been synthesized on metal sur- Obviously, the strain can induce a large band gap, which faces [1–3] and attracted extensive attention both the- is comparable to that of TMDs and suitable for switching oretically [4, 5] and experimentally [6, 7] recently. Its operations in valleytronics devices. Experimentally, one low-buckled structure supports a relatively large spin- can realize a controllable strain in silicene via deposition orbit coupling (SOC) and a sizable gap of 1.55meV at the onto stretchable substrates, similar to the strain effect in Dirac points K and K’ [8, 9]. The band gap of silicene can MoS2 [25], or by exerting an external mechanical force. be modulated by applying a perpendicular electric field, However, the effect of the strain on the valley and spin thus inducing a topological phase transition as the elec- separation in silicene systems has not been discussed pre- tric field increases [10–12]. The compatibility of silicene viously. In this paper, we adopt the tight-binding mode- with silicon-based technology motivates many studies of matching method and propose an efficient way to sepa- interesting effects, such as the spin- and valley-Hall ef- rate the Dirac fermions of different valleys, thus create fects [13–15], the quantum anomalous Hall effect [16, 17], a distinct spin separation by utilizing the strain and the valley-spin coupling [18, 19]. electric field in silicene systems. Our results show that The existence of the spin-valley coupling makes sil- the valley- and spin-dependent electrons cannot be dis- icene be a candidate for valleytronics. However, the SOC persed only by the electric field. Combining the strain is weak compared with transition metal dichalcogenides and the electric field, one can realize an effective modu- (TMDs). The interplay of spin, valley and Berry phase lation of valley and spin-dependent transport by chang- ing the amplitude or the stretch direction of the strain, related physics in TMDs, such as MoS2 and WSe2, can arXiv:1707.02465v2 [cond-mat.mes-hall] 28 Jun 2018 result in a valley-dependence spin Hall effect [20, 21]. without the need for ferromagnetic materials or magnetic Compared with TMDs, it seems that silicene is not suit- fields. This phenomenon provides a novel route to effec- able for switching operations in valleytronics devices due tively modulate the valley and spin polarizations of the to the weak SOC. Thus it is desirable to create a large silicene devices by utilizing the strain and the electric band gap and SOC in silicene systems so as to catch fields. up with TMDs in valleytronics. Recently, first-principles Comparing with the tight-binding model, the Dirac calculations show that the energy band can be signifi- theory is an effective approach which can only serve as a starting point for theoretical studies of transport in sil- icene. It has the advantage of yielding analytical results which capture the basic physical insights for certain prob- ∗Electronic address: [email protected] lems, especially those with simplified system geometries. †Electronic address: [email protected] However, for a general consideration, e.g., for compli- 2 ] II. MODEL AND DISPERSION RELATIONS ¡ We consider a low-buckled silicene sheet with zigzag Top view direction along the axis x, in which the angle Ω describes Side view the amplitude of the buckling with lattice constant being a = 3.86A˚. In the central scattering region, the silicene StrainStr ain sheet is stretched (or compressed) along the angle φ rel- ative to the axis x, as shown in Fig. 1. Note that we as- [ [ sume there exists no strain outside the central scattering [ -׎ region. The silicene sheet can be described by the four \ band second-nearest-neighbor tight-binding model [9, 16] \ c V E [c i , zi z [ ~ † tso(ξ) † z H = Viciαciα + i νij ciασαβ cjβ Drain 3√3 Source ScatteringScatterin g reregiongio n Xiα hhi,jXiiαβ 2 † z i tR (ξ~) µic (~σ dˆij ) cjβ FIG. 1: Schematic of the silicene heterojunction with an uni- − 3 2 iα × αβ i,jXαβ axial strain, electric field and voltage potential in the central hh ii scattering region. The zigzag direction of the honeycomb lat- ~ † † t(ξ) ciαcjα µiazEzciαciα, (1) tice (x-y plane) is always parallel to the axis x, the tension is − − hXi,jiα Xiα applied along the angle φ relative to the axis x, and the angle Ω is defined as between the Si-Si bond and the z direction † where ciα(ciα) refers to the creation (annihilation) op- normal to the plane. erator with spin index α at site i, and i, j / i, j run over all the nearest or next-nearest neighborh i hh hoppingii sites. The first term is the on-site potential energy, the cated geometries, or for spatially dependent variation in second term denotes the effective spin-orbit coupling with the lattice configuration (e.g. due to strain or defects), the hopping parameter tso(ξ~), where ~σ = (σx, σy, σz) the low-energy Dirac Hamiltonian is not readily avail- are the spin Pauli matrix operators, and νij = 1 for able, and one has to resort to the more general tight- the anticlockwise (clockwise) hopping between the± next- binding model. Furthermore, the tight-binding model nearest-neighboring sites with respect to the positive would automatically include higher-order terms and the z axis. The third term represents the Rashba spin- contribution of both the K and K’ valleys, and allow orbit coupling with µi = 1 for the A(B) site, where for the complete band information to be captured (even ± dˆij = dij / dij refers to the unit vector connecting the for spatially varying systems). Furthermore, the effects two next-nearest-neighboring| | sites. The fourth term is of leads and other interactions (impurity scattering, etc.) the nearest-neighbor hopping with the transfer energy can be included systematically in the tight-binding model t(ξ~), where the vector ξ~ is adopted to describe the elas- combined with the non-equilibrium Green’s function ap- tic response for which deformations are affine [27]. The proach (NEGF) and the mode-matching method. The fifth term describes the contribution of the staggered sub- tight-binding NEGF formalisms form the basis of quan- lattice potential, with 2az = 0.46A˚ being the distance tum transport modeling of nanoscale devices [26]. It of the two sublattice planes. The relaxed equilibrium can deal with a wide range of conductors, composed of values for the hopping parameters are t0(ξ~) 1.09eV, a scattering region and external leads, under the appli- ≈ t0 (ξ~) 3.9meV and t0 (ξ~) 0.7meV [9]. cation of a bias. Therefore, it is important to develop so ≈ R2 ≈ and demonstrate the use of the tight-binding NEGF tech- In the central scattering region, the silicene sheet is nique and the mode-matching method in this paper, due uniformly stretched (or compressed) along the angle φ to its more general application than that of the effective relative to the axis x. Note that we assume there ex- Dirac Hamiltonian. ists no strain outside the central scattering region. In the considered Cartesian coordinates, the tension T can The paper is organized as follows. In Sec. II, we in- be written as T = T(cos φeˆ + sin φeˆ ). It is conve- troduce the system under consideration, i.e., a silicene x y nient to represent the tension in the principal coordi- heterojunction under the influence of strain and exter- nates Ox′y′, i.e., T = Tˆe ′ . In terms of the generalized nal electric field applied to the central scattering region. x Hooke’s law [27], the strain ǫ′ are related to the com- We then calculate the strain-modulated hopping param- ij ponents of the compliance tensor, namely ǫ′ = TS , eters based on the Slater-Koster framework, and ana- ij ijxx with the indices i, j = x,y,z.