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Award Recipients with Citations IEEE JACK A. MORTON AWARD RECIPIENTS Beginning with the year 2000 presentation, the Jack A. Morton Award will be renamed the IEEE Andrew S. Grove Award. 1999 - CHARLES H. HENRY "For fundamental contributions to the Lucent Technologies, Bell Laboratories understanding of the optical properties of Murray Hill, NJ quantum wells and semiconductor lasers." 1998 - ISAMU AKASAKI “For contributions in the field of Meijo University group-III nitride materials and devices.” Nagoya, Japan and SHUJI NAKAMURA Nichia Chemical Industries, Ltd. Tokushima, Japan 1997 - CHENMING HU "For outstanding contributions to the physics and University of California modeling of MOS device reliability." Berkeley, CA 1996 - ROBERT W. DUTTON "For seminal contributions to semiconductor Stanford University process and device modeling." Stanford, CA 1995 - YOSHIO NISHI "For contributions to the basic understanding and Hewlett-Packard Company innovative development of MOS device Palo Alto, CA technology." 1994 - ROBERT E. KERWIN "For pioneering work and the basic patent on the AT&T self-aligned silicon-gate process, a key element Warren, NJ in fabrication of very large scale integrated and DONALD L. KLEIN circuits." IBM Corporation Hopewell Junction, NY and JOHN C. SARACE Rockwell International Anaheim, CA 1993 - TOSHIHISA TSUKADA "For contributions to the discovery and Hitachi, Ltd. development of Buried Heterostructure (BH) Tokyo, Japan semiconductor lasers." 1992 - TAKUO SUGANO "For contributions to Metal-Insulator- University of Tokyo Semiconductor Devices and Technology." Tokyo, Japan 1991 - TAK H. NING "For contributions to the development of HWA N. YU advanced bipolar and MOS devices." IBM Corporation Yorktown Height, NY 1 of 3 IEEE JACK A. MORTON AWARD RECIPIENTS Beginning with the year 2000 presentation, the Jack A. Morton Award will be renamed the IEEE Andrew S. Grove Award. 1990 - GREGORY E. STILLMAN "For the growth and characterization of ultra-high University of Illinois purity gallium arsenide and related compounds." Urbana, IL and CHARLES M. WOLFE Washington University St. Louis, MO 1989 - CHIH-TANG SAH "For contributions to the understanding of University of Illinois semiconductor defects and the physics of MOS Urbana, IL devices." 1988 - FRANK STERN "For contributions to the theory of injection lasers IBM Corp. and two-dimensional electron gases." Yorktown Heights, NY 1987 - DENNIS D. BUSS "For the demonstration and development of and RICHARD A. CHAPMAN mercury cadmium telluride monolithically- and MICHAEL A. KINCH integrated charge-coupled device focal plane Texas Instruments arrays." Dallas, TX 1986 - HERBERT KROEMER "For pioneering the theory and device University of California applications of semiconductor heterostructures." Santa Barbara, CA 1985 - ROBERT D. BURNHAM "For contributions to electrically pumped and WILLIAM STREIFER distributed feedback lasers and high-power Xerox Corp. phased-locked laser arrays." Palo Alto, CA and DONALD R. SCIFRES Spectra Diode Laboratories San Jose, CA 1984 - HANS S. RUPPRECHT "For pioneering work in gallium aluminum and JERRY M. WOODALL arsenide heterojunctions and high efficiency light IBM Corp. emitting diodes and injection lasers prepared by Yorktown Heights, NY liquid phase epitaxy." 1983 - JUN-ICHI NISHIZAWA "For invention and development of the class of Tohoku University static induction transistors (SIT) and for advances Sendai, Japan in optoelectronic devices." 1982 - DOV FROHMAN-BENTCHKOWSKY "For contributions to non-volatile semiconductor INTEL Elec. memories." Jerusalem, Israel 1981 - NICK HOLONYAK, JR. "For pioneering work in quantum well lasers and University of Illinois contributions to visible semiconductor lasers and Urbana, IL light-emitting diodes." 2 of 3 IEEE JACK A. MORTON AWARD RECIPIENTS Beginning with the year 2000 presentation, the Jack A. Morton Award will be renamed the IEEE Andrew S. Grove Award. 1980 - JAMES F. GIBBONS "For pioneering contributions to the use of ion Stanford University implantation in the fabrication of semiconductor Stanford, CA devices." 1979 - MARTIN P. LEPSELTER "For invention of the beam-lead structure and Bell Laboratories metallurgy used in silicon integrated circuits." Murray Hill, NJ 1978 - JURI MATISOO "For pioneering the Josephson computer IBM Corp. technology." Yorktown Heights, NY 1977 - MORGAN SPARKS "For contributions to solid-state device technology Sandia Corp. and the management of research and Albuquerque, NM development." 1976 - ROBERT N. HALL "For outstanding achievement in solid-state General Electric Co. physics and chemistry and the invention and Schenectady, NY development of semiconductor devices." 3 of 3 .
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