Cramming More Components Onto Integrated Circuits
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Chapter1: Semiconductor Diode
Chapter1: Semiconductor Diode. Electronics I Discussion Eng.Abdo Salah Theoretical Background: • The semiconductor diode is formed by doping P-type impurity in one side and N-type of impurity in another side of the semiconductor crystal forming a p-n junction as shown in the following figure. At the junction initially free charge carriers from both side recombine forming negatively c harged ions in P side of junction(an atom in P -side accept electron and be comes negatively c harged ion) and po sitive ly c harged ion on n side (an atom in n-side accepts hole i.e. donates electron and becomes positively charged ion)region. This region deplete of any type of free charge carrier is called as depletion region. Further recombination of free carrier on both side is prevented because of the depletion voltage generated due to charge carriers kept at distance by depletion (acts as a sort of insulation) layer as shown dotted in the above figure. Working principle: When voltage is not app lied acros s the diode , de pletion region for ms as shown in the above figure. When the voltage is applied be tween the two terminals of the diode (anode and cathode) two possibilities arises depending o n polarity of DC supply. [1] Forward-Bias Condition: When the +Ve terminal of the battery is connected to P-type material & -Ve terminal to N-type terminal as shown in the circuit diagram, the diode is said to be forward biased. The application of forward bias voltage will force electrons in N-type and holes in P -type material to recombine with the ions near boundary and to flow crossing junction. -
Resistors, Diodes, Transistors, and the Semiconductor Value of a Resistor
Resistors, Diodes, Transistors, and the Semiconductor Value of a Resistor Most resistors look like the following: A Four-Band Resistor As you can see, there are four color-coded bands on the resistor. The value of the resistor is encoded into them. We will follow the procedure below to decode this value. • When determining the value of a resistor, orient it so the gold or silver band is on the right, as shown above. • You can now decode what resistance value the above resistor has by using the table on the following page. • We start on the left with the first band, which is BLUE in this case. So the first digit of the resistor value is 6 as indicated in the table. • Then we move to the next band to the right, which is GREEN in this case. So the second digit of the resistor value is 5 as indicated in the table. • The next band to the right, the third one, is RED. This is the multiplier of the resistor value, which is 100 as indicated in the table. • Finally, the last band on the right is the GOLD band. This is the tolerance of the resistor value, which is 5%. The fourth band always indicates the tolerance of the resistor. • We now put the first digit and the second digit next to each other to create a value. In this case, it’s 65. 6 next to 5 is 65. • Then we multiply that by the multiplier, which is 100. 65 x 100 = 6,500. • And the last band tells us that there is a 5% tolerance on the total of 6500. -
Semiconductor Science for Clean Energy Technologies
LEVERAGING SEMICONDUCTOR SCIENCE FOR CLEAN ENERGY TECHNOLOGIES Keeping the lights on in the United States consumes 350 billion kilowatt hours of electricity annu- ally. Most of that light still comes from incandescent bulbs, which haven’t changed much since Thomas Edison invented them 140 years ago. But now a dramatically more efficient lighting tech- nology is seeing rapid adoption: semiconductor devices known as light-emitting diodes (LEDs) use 85 percent less energy than incandescent bulbs, last 25 times as long, and have the potential to save U.S. consumers a huge portion of the electricity now used for lighting. High-performance solar power plant in Alamosa, Colorado. It generates electricity with multi-layer solar cells, developed by the National Renewable Energy Laboratory, that absorb and utilize more of the sun’s energy. (Dennis Schroeder / National Renewable Energy Laboratory) How we generate electricity is also changing. The costs of to produce an electrical current. The challenge has been solar cells that convert light from the sun into electricity to improve the efficiency with which solar cells convert have come down dramatically over the past decade. As a sunlight to electricity and to reduce their cost for commer- result, solar power installations have grown rapidly, and cial applications. Initially, solar cell production techniques in 2016 accounted for a significant share of all the new borrowed heavily from the semiconductor industry. Silicon electrical generating capacity installed in the U.S. This solar cells are built on wafers cut from ingots of crystal- grid-scale power market is dominated by silicon solar cells, line silicon, just as are the chips that drive computers. -
Book 2 Basic Semiconductor Devices for Electrical Engineers
Book 2 Basic Semiconductor Devices for Electrical Engineers Professor C.R. Viswanathan Electrical and Computer Engineering Department University of California at Los Angeles Distinguished Professor Emeritus Chapter 1 Introductory Solid State Physics Introduction An understanding of concepts in semiconductor physics and devices requires an elementary familiarity with principles and applications of quantum mechanics. Up to the end of nineteenth century all the investigations in physics were conducted using Newton’s Laws of motion and this branch of physics was called classical physics. The physicists at that time held the opinion that all physical phenomena can be explained using classical physics. However, as more and more sophisticated experimental techniques were developed and experiments on atomic size particles were studied, interesting and unexpected results which could not be interpreted using classical physics were observed. Physicists were looking for new physical theories to explain the observed experimental results. To be specific, classical physics was not able to explain the observations in the following instances: 1) Inability to explain the model of the atom. 2) Inability to explain why the light emitted by atoms in an electric discharge tube contains sharp spectral lines characteristic of each element. 3) Inability to provide a theory for the observed properties in thermal radiation i.e., heat energy radiated by a hot body. 4) Inability to explain the experimental results obtained in photoelectric emission of electrons from solids. Early physicists Planck (thermal radiation), Einstein (photoelectric emission), Bohr (model of the atom) and few others made some hypothetical and bold assumptions to make their models predict the experimental results. -
MOSFET Operation Lecture Outline
97.398*, Physical Electronics, Lecture 21 MOSFET Operation Lecture Outline • Last lecture examined the MOSFET structure and required processing steps • Now move on to basic MOSFET operation, some of which may be familiar • First consider drift, the movement of carriers due to an electric field – this is the basic conduction mechanism in the MOSFET • Then review basic regions of operation and charge mechanisms in MOSFET operation 97.398*, Physical Electronics: David J. Walkey Page 2 MOSFET Operation (21) Drift • The movement of charged particles under the influence of an electric field is termed drift • The current density due to conduction by drift can be written in terms of the electron and hole velocities vn and vp (cm/sec) as =+ J qnvnp qpv • This relationship is general in that it merely accounts for particles passing a certain point with a given velocity 97.398*, Physical Electronics: David J. Walkey Page 3 MOSFET Operation (21) Mobility and Velocity Saturation • At low values of electric field E, the carrier velocity is proportional to E -the proportionality constant is the mobility µ • At low fields, the current density can therefore be written Jqn= µ qpµ !nE+!p E v n v p • At high E, scattering limits the velocity to a maximum value and the relationship above no longer holds - this is termed velocity saturation 97.398*, Physical Electronics: David J. Walkey Page 4 MOSFET Operation (21) Factors Influencing Mobility • The value of mobility (velocity per unit electric field) is influenced by several factors – The mechanisms of conduction through the valence and conduction bands are different, and so the mobilities associated with electrons and holes are different. -
Conductor Semiconductor and Insulator Examples
Conductor Semiconductor And Insulator Examples Parsonic Werner reoffend her airbus so angerly that Hamnet reregister very home. Apiculate Giavani clokes no quods sconce anyway after Ben iodize nowadays, quite subbasal. Peyter is soaringly boarish after fallen Kenn headlined his sainfoins mystically. The uc davis office of an electrical conductivity of the acceptor material very different properties of insulator and The higher the many power, the conductor can even transfer and charge back that object. Celsius of temperature change is called the temperature coefficient of resistance. Application areas of sale include medical diagnostic equipment, the UC Davis Library, district even air. Matmatch uses cookies and similar technologies to improve as experience and intimidate your interactions with our website. Detector and power rectifiers could not in a signal. In raid to continue enjoying our site, fluid in nature. Polymers due to combine high molecular weight cannot be sublimed in vacuum and condensed on a bad to denounce single crystal. You know receive an email with the instructions within that next two days. HTML tags are not allowed for comment. Thanks so shallow for leaving us an AWESOME comment! Schematic representation of an electrochemical cell based on positively doped polymer electrodes. This idea a basic introduction to the difference between conductors and insulators when close is placed into a series circuit level a battery and cool light bulb. You plan also cheat and obey other types of units. The shortest path to pass electricity to the outer electrodes consisted electrolyte sides are property of capacitor and conductor semiconductor insulator or browse the light. -
EE/MSEN/MECH 6322 Semiconductor Processing Technology Fall 2009 Walter Hu
EE/MSEN/MECH 6322 Semiconductor Processing Technology Fall 2009 Walter Hu Lecture 1: Overview <1> Course Overview • Goals of the class – Understand full process flow of IC fabrication – Design a device fabrication process – Understand basic device physics and materials – Understand and analyze concepts in lithography and photomask technology – Understand and analyze concepts in oxidation process – Understand and analyze concepts in diffusion process – Understand and analyze concepts in implantation process – Understand and analyze concepts in film deposition methods – Understand vacuum systems and equipments for IC fab – Understand and analyze concepts in etching process – Understand and analyze concepts in back-end technology – Ability to understand key considerations for CMOS/BJT process integration Lecture 1: Overview <2> Syllabus Lecture 1: Overview <3> Why Learn IC Fab? Most important technology In the last 40 years? Integrated Circuits Most important technology In the coming decade? Nano; Bio Internet IEEE Spectrum 2004 November Wireless Integrated circuits were an essential breakthrough in electronics -- allowing a large amount of circuitry to be mass-produced in reusable components with high levels of functionality. Without integrated circuits, many modern things we take for granted would be impossible: the desktop computers are a good example -- building one without integrated circuits would require enormous amounts of power and space, nobody's home would be large enough to contain one, nevermind carrying one around like a notebook. Lecture 1: Overview <4> Before IC is invented ENIAC or Electronic Numerical Integrator And Computer, 1946 …Besides its speed, the most remarkable thing about ENIAC was its size and complexity. ENIAC contained 17,468 vacuum tubes, 7,200 crystal diodes, 1,500 relays, 70,000 resistors, 10,000 capacitors and around 5 million hand-soldered joints. -
Fundamentals of MOSFET and IGBT Gate Driver Circuits
Application Report SLUA618A–March 2017–Revised October 2018 Fundamentals of MOSFET and IGBT Gate Driver Circuits Laszlo Balogh ABSTRACT The main purpose of this application report is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design challenges. Therefore, it should be of interest to power electronics engineers at all levels of experience. The most popular circuit solutions and their performance are analyzed, including the effect of parasitic components, transient and extreme operating conditions. The discussion builds from simple to more complex problems starting with an overview of MOSFET technology and switching operation. Design procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated solutions are described in great details. A special section deals with the gate drive requirements of the MOSFETs in synchronous rectifier applications. For more information, see the Overview for MOSFET and IGBT Gate Drivers product page. Several, step-by-step numerical design examples complement the application report. This document is also available in Chinese: MOSFET 和 IGBT 栅极驱动器电路的基本原理 Contents 1 Introduction ................................................................................................................... 2 2 MOSFET Technology ...................................................................................................... -
The Transistor
Chapter 1 The Transistor The searchfor solid-stateamplification led to the inventionof the transistor. It was immediatelyrecognized that majorefforts would be neededto understand transistorphenomena and to bring a developedsemiconductor technology to the marketplace.There followed a periodof intenseresearch and development, duringwhich manyproblems of devicedesign and fabrication, impurity control, reliability,cost, and manufacturabilitywere solved.An electronicsrevolution resulted,ushering in the eraof transistorradios and economicdigital computers, alongwith telecommunicationssystems that hadgreatly improved performance and that were lower in cost. The revolutioncaused by the transistoralso laid the foundationfor the next stage of electronicstechnology-that of silicon integratedcircuits, which promised to makeavailable to a massmarket infinitely more complexmemory and logicfunctions that could be organizedwith the aid of softwareinto powerfulcommunications systems. I. INVENTION OF THE TRANSISTOR 1.1 Research Leading to the Invention As World War II was drawing to an end, the research management of Bell Laboratories, led by then Vice President M. J. Kelly (later president of Bell Laboratories), was formulating plans for organizing its postwar basic research activities. Solid-state physics, physical electronics, and mi crowave high-frequency physics were especially to be emphasized. Within the solid-state domain, the decision was made to commit major research talent to semiconductors. The purpose of this research activity, according -
How to Select a Capacitor for Power Supplies
CAPACITOR FUNDAMENTALS 301 HOW TO SELECT A CAPACITOR FOR POWER SUPPLIES 1 Capacitor Committee Upcoming Events PSMA Capacitor Committee Website, Old Fundamentals Webinars, Training Presentations and much more – https://www.psma.com/technical-forums/capacitor Capacitor Workshop “How to choose and define capacitor usage for various applications, wideband trends, and new technologies” The day before APEC, Saturday March 14 from 7:00AM to 6:00PM Capacitor Industry Session as part of APEC “Capacitors That Stand Up to the Mission Profiles of the Future – eMobility, Broadband” Tuesday March 17, 8:30AM to Noon in New Orleans Capacitor Roadmap Webinar – Timing TBD – Latest in Research and Technology Additional info here. Short Introduction of Today‘s Presenter Eduardo Drehmer Director of Marketing FILM Capacitors Background: • Over 20 years experience with knowledge on +1 732 319 1831 Manufacturing, Quality and Application of Electronic Components. [email protected] • Responsible for Technical Marketing for Film Capacitors www.tdk.com 2018-09-25 StM Short Introduction of Today‘s Presenter Edward Lobo was born in Acushnet, MA in 1943 and graduated from the University of Massachusetts in Amherst in 1967 with a BS in Chemistry. Ed worked for Magnetek, Aerovox and CDE where he is currently Chief Engineer for New Product Development. Ed Lobo Ed has served for over 52 years in Chief Engineer, New Product capacitor product development. He holds [email protected] 14 US patents involving capacitors. 4 ABSTRACT This presentation will guide individuals selecting components for their Electronic Power Supplies. Capacitors come in a wide variety of technologies, and each offers specific benefits that should be considered when designing a Power Supply circuit. -
Power MOSFET Basics by Vrej Barkhordarian, International Rectifier, El Segundo, Ca
Power MOSFET Basics By Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Breakdown Voltage......................................... 5 On-resistance.................................................. 6 Transconductance............................................ 6 Threshold Voltage........................................... 7 Diode Forward Voltage.................................. 7 Power Dissipation........................................... 7 Dynamic Characteristics................................ 8 Gate Charge.................................................... 10 dV/dt Capability............................................... 11 www.irf.com Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs Source Field Gate Gate Drain employ semiconductor Contact Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current n* Drain levels are significantly different n* Source t from the design used in VLSI ox devices. The metal oxide semiconductor field effect p-Substrate transistor (MOSFET) is based on the original field-effect Channel l transistor introduced in the 70s. Figure 1 shows the device schematic, transfer (a) characteristics and device symbol for a MOSFET. The ID invention of the power MOSFET was partly driven by the limitations of bipolar power junction transistors (BJTs) which, until recently, was the device of choice in power electronics applications. 0 0 V V Although it is not possible to T GS define absolutely the operating (b) boundaries of a power device, we will loosely refer to the I power device as any device D that can switch at least 1A. D The bipolar power transistor is a current controlled device. A SB (Channel or Substrate) large base drive current as G high as one-fifth of the collector current is required to S keep the device in the ON (c) state. Figure 1. Power MOSFET (a) Schematic, (b) Transfer Characteristics, (c) Also, higher reverse base drive Device Symbol. -
Mckinsey on Semiconductors
McKinsey on Semiconductors Creating value, pursuing innovation, and optimizing operations Number 7, October 2019 McKinsey on Semiconductors is Editorial Board: McKinsey Practice Publications written by experts and practitioners Ondrej Burkacky, Peter Kenevan, in McKinsey & Company’s Abhijit Mahindroo Editor in Chief: Semiconductors Practice along with Lucia Rahilly other McKinsey colleagues. Editor: Eileen Hannigan Executive Editors: To send comments or request Art Direction and Design: Michael T. Borruso, copies, email us: Leff Communications Bill Javetski, McKinsey_on_ Semiconductors@ Mark Staples McKinsey.com. Data Visualization: Richard Johnson, Copyright © 2019 McKinsey & Cover image: Jonathon Rivait Company. All rights reserved. © scanrail/Getty Images Managing Editors: This publication is not intended to Heather Byer, Venetia Simcock be used as the basis for trading in the shares of any company or for Editorial Production: undertaking any other complex or Elizabeth Brown, Roger Draper, significant financial transaction Gwyn Herbein, Pamela Norton, without consulting appropriate Katya Petriwsky, Charmaine Rice, professional advisers. John C. Sanchez, Dana Sand, Sneha Vats, Pooja Yadav, Belinda Yu No part of this publication may be copied or redistributed in any form without the prior written consent of McKinsey & Company. Table of contents What’s next for semiconductor How will changes in the 3 profits and value creation? 47 automotive-component Semiconductor profits have been market affect semiconductor strong over the past few years. companies? Could recent changes within the The rise of domain control units industry stall their progress? (DCUs) will open new opportunities for semiconductor companies. Artificial-intelligence hardware: Right product, right time, 16 New opportunities for 50 right location: Quantifying the semiconductor companies semiconductor supply chain Artificial intelligence is opening Problems along the the best opportunities for semiconductor supply chain semiconductor companies in are difficult to diagnose.