Introducing 5-nm FinFET technology in Microwind Etienne Sicard, Lionel Trojman To cite this version: Etienne Sicard, Lionel Trojman. Introducing 5-nm FinFET technology in Microwind. 2021. hal- 03254444 HAL Id: hal-03254444 https://hal.archives-ouvertes.fr/hal-03254444 Submitted on 8 Jun 2021 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Introducing 5-nm FinFET technology in Microwind Etienne SICARD Lionel TROJMAN Professor Professor, INSA-Dgei, 135 Av de Rangueil ISEP -Institut Supérieur 31077 Toulouse – France d’Électronique de Paris, 10 rue de www.microwind.org Vanves, Issy les Moulineaux, email: Etienne.sicard@insa- 92130-France. toulouse.fr Email :
[email protected] Abstract: This paper describes the implementation of a high performance FinFET-based 5-nm CMOS technology in Microwind. After a general presentation of the electronic market and the roadmap to 1- nm technology, design rules and basic metrics for the 5-nm node are presented. Concepts related to the design of FinFET and design for manufacturing are also described. The performances of a ring oscillator, basic cells and a 6-transistor RAM memory are also analyzed. Keywords: FinFET, CMOS design, 5-nm, Ring oscillator, interconnects, SRAM, logic gates Introduction Manufacturing smaller circuits begets the integration of more complex components to comply with a demand for an increased operating frequency and reduced power consumption.