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A High -Temperature, High-Voltage, Fast Response Time Linear Regulator in 0.8Um BCD-On-SOI University of Tennessee, Knoxville TRACE: Tennessee Research and Creative Exchange Doctoral Dissertations Graduate School 8-2010 A High -Temperature, High-Voltage, Fast Response Time Linear Regulator in 0.8um BCD-on-SOI Chia Hung Su [email protected] Follow this and additional works at: https://trace.tennessee.edu/utk_graddiss Part of the Electrical and Electronics Commons Recommended Citation Su, Chia Hung, "A High -Temperature, High-Voltage, Fast Response Time Linear Regulator in 0.8um BCD- on-SOI. " PhD diss., University of Tennessee, 2010. https://trace.tennessee.edu/utk_graddiss/851 This Dissertation is brought to you for free and open access by the Graduate School at TRACE: Tennessee Research and Creative Exchange. It has been accepted for inclusion in Doctoral Dissertations by an authorized administrator of TRACE: Tennessee Research and Creative Exchange. For more information, please contact [email protected]. To the Graduate Council: I am submitting herewith a dissertation written by Chia Hung Su entitled "A High -Temperature, High-Voltage, Fast Response Time Linear Regulator in 0.8um BCD-on-SOI." I have examined the final electronic copy of this dissertation for form and content and recommend that it be accepted in partial fulfillment of the equirr ements for the degree of Doctor of Philosophy, with a major in Electrical Engineering. Syed K. Islam, Major Professor We have read this dissertation and recommend its acceptance: Benjamin J. Blalock, Leon Tolbert, Joshua S. Fu Accepted for the Council: Carolyn R. Hodges Vice Provost and Dean of the Graduate School (Original signatures are on file with official studentecor r ds.) To the Graduate Council: I am submitting herewith a dissertation written by Chiahung Su entitled “A High - Temperature, High-Voltage, Fast Response Time Linear Regulator in 0.8um BCD-on- SOI.” I have examined the final electronic copy of this dissertation for form and content and recommend that it be accepted in partial fulfillment of the requirements for the degree of Doctor of Philosophy, with a major in Electrical Engineering. Syed K. Islam, Major Professor We have read this dissertation and recommend its acceptance: Benjamin J. Blalock Leon Tolbert Joshua S. Fu Accepted for the Council: Carolyn R. Hodges Vice Provost and Dean of the Graduate School (Original signatures are on file with official student records.) A High -Temperature, High-Voltage, Fast Response Time Linear Regulator in 0.8um BCD-on-SOI A Dissertation Presented for the Doctor of Philosophy Degree The University of Tennessee, Knoxville Chiahung Su August 2010 ACKNOWLEDGEMENTS I would like to take this opportunity to thank my advisor, Dr. Syed K. Islam, for his valuable suggestion and great patience during my Ph.D. education. Without his guidance, this research work would not be completed. I am greatly indebted to his guidance and support. I would also like to thank my committee members: Dr. Benjamin J. Blalock, for his helpful advice and endless encouragement during proposal and various design review meetings; Dr. Leon Tolbert for his support and the opportunity for me to complete my education; and Dr. Joshua S. Fu for their valuable suggestions on the proposal and dissertation. I would like to thank all of my co-workers at Analog VLSI & Device Laboratory and the Integrated Circuits & Systems Laboratory for their help and friendship. They are Mo Zhang, Rafiqul Haider, Sazia Eliza, Touhidur Rahman, Aminul Huque, Asraf Bin Islam, Salwa Mostafa, Liang Zuo, Song Yuan, Kai Zhu, Neena Nambiar, Chandradevi Ulaganathan, Kevin Tham, Getao Liang, Ben McCue, Ross Chun, and Robert Greenwell. I would like to thank all of my friends from Taiwanese Student Association in University of Tennessee. They are Peter Lin’s family, Teyu Chien and Hao-Hsiang Liao. Special thanks are given to Dr. Wenchao Qu, for his mentorship in Analog IC design and friendship. I would like to express my gratitude to Dr. Qu for sacrificing his valuable family time in the weekend to help me on various technical problems. I would like to thank my late grandma and my late aunt. Without their love, I may not to complete my education. Last but never the least; thank my parents, my brothers, and Miaoru Liu for their love, encouragement and support. i ABSTRACT The sale of hybrid electric vehicles (HEVs) has increased tenfold from the year 2001 to 2009 [1]. With this the demand for high temperature electronics has also increased dramatically making, high temperature electronics for HEV applications desirable in the engine compartment , power train, and brakes where the ambient temperature normally exceeds 150°C. Power converters (i.e. DC-DC converter, DC-AC inverter) inside the HEVs require gate drivers to control the power switches. An integrated gate driver circuit has been realized in 0.8-um BCD- on-SOI process. This gate driver IC needs a step-down voltage regulator to convert the unregulated high input DC voltage (V DDH ) to a regulated nominal CMOS voltage (i.e. 5 V). This step-down voltage regulator will supply voltage to the low-side buffer (pre-driver) and other digital and analog circuits inside the gate driver ICs. A linear voltage regulator is employed to accomplish this task; however, very few publications on high temperature voltage regulators are available. This research presents a high temperature linear voltage regulator designed and fabricated in a commercially available 0.8-um BCD-on-SOI process. SOI processes typically offer reduced junction leakage current by three orders of magnitude compared to the bulk-CMOS processes at temperatures beyond 150°C. In addition, a pole swap compensation technique is utilized to achieve stability over a wide range (four decades) of load current. The error amplifier inside the regulator is designed using an inversion coefficient based design methodology, and a temperature stable current reference is used to bias the error amplifier. The linear regulator provides an output voltage of 5.3 V at room temperature and can supply a maximum load current of 200 mA. ii Table of Contents LIST OF FIGURES ........................................................................................................................ 1 LIST OF TABLES .......................................................................................................................... 1 CHAPTER 1 ................................................................................................................................... 1 INTRODUCTION .......................................................................................................................... 1 1.1 Motivation ........................................................................................................................ 1 1.2 Gate Driver Circuit and Voltage Regulator...................................................................... 5 1.3 Comparison of Voltage Regulator Topologies ..................................................................... 8 1.3.1. Linear Regulator ....................................................................................................... 8 1.3.2. Switching Regulator.................................................................................................. 9 1.3.3. Shunt Regulator ...................................................................................................... 10 1.4 Specifications of Voltage Regulator ................................................................................... 11 1.4.1. Load Regulation ...................................................................................................... 13 1.4.2. Line Regulation ....................................................................................................... 13 1.4.3. Power Supply Rejection .......................................................................................... 14 1.4.4. Quiescent Current ................................................................................................... 15 1.4.5. Power Efficiency ..................................................................................................... 15 1.4.6. Current Efficiency ................................................................................................... 16 1.4.7. Transient Output Voltage Variation........................................................................ 16 1.4.8. Dropout Voltage...................................................................................................... 17 1.5 Selection of Pass Transistor ................................................................................................ 18 1.6 Silicon-on-Insulator Technology ........................................................................................ 20 CHAPTER 2 ................................................................................................................................. 23 Literature Review ......................................................................................................................... 23 2.1 Introduction ......................................................................................................................... 23 2.1.1. Low Dropout Voltage Regulator ............................................................................ 23 2.1.2. High Temperature Linear Voltage Regulator ......................................................... 24 2.2 Design Examples in Prior Arts ........................................................................................... 25 2.2.1. Design
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