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A Linear Microwave Plasma Source Using a Circular Waveguide Filled applied sciences Article A Linear Microwave Plasma Source Using a Circular Waveguide Filled with a Relatively High-Permittivity Dielectric: Comparison with a Conventional Quasi-Coaxial Line Waveguide Ju-Hong Cha, Sang-Woo Kim and Ho-Jun Lee * Department of Electrical Engineering, Pusan National University, Busan 46241, Korea; [email protected] (J.-H.C.); [email protected] (S.-W.K.) * Correspondence: [email protected] Abstract: For a conventional linear microwave plasma source (LMPS) with a quasi-coaxial line transverse electromagnetic (TEM) waveguide, a linearly extended plasma is sustained by the surface wave outside the tube. Due to the characteristics of the quasi-coaxial line MPS, it is easy to generate a uniform plasma with radially omnidirectional surfaces, but it is difficult to maximize the electron density in a curved selected region. For the purpose of concentrating the plasma density in the deposition area, a novel LMPS which is suitable for curved structure deposition has been developed and compared with the conventional LMPS. As the shape of a circular waveguide, it is filled with relatively high-permittivity dielectric instead of a quasi-coaxial line waveguide. Microwave power at Citation: Cha, J.-H.; Kim, S.-W.; Lee, 2.45 GHz is transferred to the plasma through the continuous cylindrical-slotted line antenna, and H.-J. A Linear Microwave Plasma the radiated electric field in the radial direction is made almost parallel to the tangential plane of Source Using a Circular Waveguide the window surface. This research includes the advanced 3D numerical analysis and compares the Filled with a Relatively results with the experiment. It shows that the electron density in the deposition area is higher than High-Permittivity Dielectric: that of the conventional quasi-coaxial line plasma MPS. Comparison with a Conventional Quasi-Coaxial Line Waveguide. Appl. Keywords: microwave plasma; linear microwave plasma source; three-dimensional plasma fluid Sci. 2021, 11, 5358. https://doi.org/ simulation 10.3390/app11125358 Academic Editor: Mohammed Koubiti 1. Introduction Microwave plasma sources (MPSs) are driven by applied frequencies of 1–100 GHz and Received: 8 May 2021 lead to electron heating and excitation of a discharge from the electromagnetic waves that Accepted: 3 June 2021 Published: 9 June 2021 either penetrate the plasma or exist along the surface [1,2]. With weakly ionized MPS used for material processing, waves are important to transfer energy from the excited surface of Publisher’s Note: MDPI stays neutral the waveguiding structure to the bulk plasma, where the wave energy is absorbed [3]. The with regard to jurisdictional claims in main element of the MPS, for material processing, is the microwave-to-plasma applicator published maps and institutional affil- because it determines the structure of the electromagnetic field in the plasma as well as iations. the absorption energy efficiency of plasma [4]. The structure of the electromagnetic field in plasma is determined by the correlation of the internal plasma parameters (electron density, plasma frequency, etc.) and the external source parameters (waveguide structure, size of source, frequency, etc.). The energy absorption efficiency of MPS is determined by the wave penetration depth in the plasma, wave field strength at the plasma surface, and Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland. waveguiding structure. This article is an open access article Among the MPS for material processing, the sources generally have a form in which distributed under the terms and waves propagate along the transmission lines. The plasma is generated by the waves conditions of the Creative Commons emitted from the dielectric surface which replaces a part of the waveguiding structure. Attribution (CC BY) license (https:// Depending on the size and structure of the dielectric surface, plasma sources using the creativecommons.org/licenses/by/ transmission line field can be classified in the following ways: (i) plasma is a part of 4.0/). the waveguiding structure (transmission line applicators) and (ii) plasma is sustained Appl. Sci. 2021, 11, 5358. https://doi.org/10.3390/app11125358 https://www.mdpi.com/journal/applsci Appl. Sci. 2021, 11, x FOR PEER REVIEW 2 of 20 Appl. Sci. 2021, 11, 5358 transmission line field can be classified in the following ways: (i) plasma is a part of2 the of 20 waveguiding structure (transmission line applicators) and (ii) plasma is sustained by the field leaking out of the structure (antenna applicators) [5]. For the transmission line applicator,by the field the leaking cross section out of theof structurethe plasma–dielectric (antenna applicators) contact is [5wide,]. For whereas the transmission for the antennaline applicator, applicator, the the cross plasma–dielectric section of the plasma–dielectric contact cross section contact is narrow. is wide, So, whereas in the for case the ofantenna antenna applicator, applicator, the the plasma–dielectric process stability is contact high since cross the section wave ispropagation narrow. So, mode in the and case theof resonant antenna applicator,cavity in the the waveguiding process stability structure is high are since less theaffected wave by propagation plasma generation. mode and Hence,the resonant in material cavity processing, in the waveguiding which requires structure stable areplasma less affectedoperation, by antenna plasma applicator generation. typeHence, MPSs in are material preferred. processing, which requires stable plasma operation, antenna applicator typeAmong MPSs arethe preferred.antenna apllicator type MPS, LMPSs are mainly used for large area processingAmong [6]. theErstwhile antenna LMPS apllicator models type [7] MPS,were LMPSseither in are the mainly form of used discharge for large tubes area placedprocessing inside [ 6the]. Erstwhileguiding structure LMPS models or in th [7]e wereform eitherof discharge in the formtubes of across discharge the wide tubes waveguideplaced inside wall the parallel guiding to structurethe electric or field in the [8,9]. form However, of discharge in terms tubes of across productivity the wide improvementwaveguide walland large parallel area to material the electric processing, field [8 ,the9]. shape However, of the in discharge terms of tubes productivity inside theimprovement guiding structure and large is not area suited material for the processing, application, the so shapethe shape of the of the discharge discharge tubes outside inside thethe guiding guiding structure structure is is notdemanded. suited for A the SW application, sustained sosource the shape called of the the duo-plasma discharge outside line source,the guiding which structureuses the quasi-coaxial is demanded. line A TEM SW sustained wave mode, source was calledinvented the according duo-plasma to the line shapesource, of the which discharge uses the outside quasi-coaxial the tube linewith TEM a waveguiding wave mode, structure was invented [10,11]. according Due to the to highthe shapescalability of the with discharge a large outside processing the tube area with [12,13], a waveguiding duo-plasma structure line source [10, 11has]. Duebeen to appliedthe high to scalabilitymany plasma with enhanced a large processing chemical vapor area [ 12deposition,13], duo-plasma (PECVD) line processes source hassuch been as hardapplied coating, to many thin plasmafilm, synt enhancedhesis of chemicalgraphene, vapor and display deposition panels, (PECVD) which processes require a such large as area,hard an coating, operation thin pressure film, synthesis of 0.2~3Torr, of graphene, and high and speed display processes panels, [14–17]. which require a large area,In anthe operation quasi-coaxial pressure line ofTEM 0.2~3 wave Torr, mode, and highthe isotropically speed processes emitted [14– transverse17]. wave field fromIn the the quasi-coaxial inner conductor line TEM is perpendicular wave mode, theto the isotropically tangential emitted plane of transverse the window wave field from the inner conductor is perpendicular to the tangential plane of the window surface in all radial directions, and the dielectric surface in all radial directions is exposed surface in all radial directions, and the dielectric surface in all radial directions is exposed to interact with the plasma generation. Therefore, it is easy to generate a uniform plasma to interact with the plasma generation. Therefore, it is easy to generate a uniform plasma in in the radially omnidirectional plasma–dielectric window surfaces. However, it is difficult the radially omnidirectional plasma–dielectric window surfaces. However, it is difficult to to maximize the process productivity by concentrating the plasma density in a one- maximize the process productivity by concentrating the plasma density in a one-directional directional selected deposition region. In this study, for the purpose of concentrating the selected deposition region. In this study, for the purpose of concentrating the plasma plasma density in the selective area, a cylindrical slotted LMPS that had a high electron density in the selective area, a cylindrical slotted LMPS that had a high electron density in density in a specific deposition region was proposed and was compared with the quasi- a specific deposition region was proposed and was compared with the quasi-coaxial LMPS. coaxial LMPS. The shape of the discharge outside the guiding structure [18–20], The shape of the discharge outside the guiding structure [18–20], cylindrical-slotted LMPS cylindrical-slotted
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