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Analytical Compact Modeling of Nanoscale Multiple-Gate Mosfets

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Analytical Compact Modeling of Nanoscale Multiple-Gate Mosfets ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS. Thomas Holtij Dipòsit Legal: T 1670-2014 ADVERTIMENT. L'accés als continguts d'aquesta tesi doctoral i la seva utilització ha de respectar els drets de la persona autora. Pot ser utilitzada per a consulta o estudi personal, així com en activitats o materials d'investigació i docència en els termes establerts a l'art. 32 del Text Refós de la Llei de Propietat Intel·lectual (RDL 1/1996). Per altres utilitzacions es requereix l'autorització prèvia i expressa de la persona autora. En qualsevol cas, en la utilització dels seus continguts caldrà indicar de forma clara el nom i cognoms de la persona autora i el títol de la tesi doctoral. No s'autoritza la seva reproducció o altres formes d'explotació efectuades amb finalitats de lucre ni la seva comunicació pública des d'un lloc aliè al servei TDX. Tampoc s'autoritza la presentació del seu contingut en una finestra o marc aliè a TDX (framing). Aquesta reserva de drets afecta tant als continguts de la tesi com als seus resums i índexs. ADVERTENCIA. El acceso a los contenidos de esta tesis doctoral y su utilización debe respetar los derechos de la persona autora. Puede ser utilizada para consulta o estudio personal, así como en actividades o materiales de investigación y docencia en los términos establecidos en el art. 32 del Texto Refundido de la Ley de Propiedad Intelectual (RDL 1/1996). Para otros usos se requiere la autorización previa y expresa de la persona autora. En cualquier caso, en la utilización de sus contenidos se deberá indicar de forma clara el nombre y apellidos de la persona autora y el título de la tesis doctoral. No se autoriza su reproducción u otras formas de explotación efectuadas con fines lucrativos ni su comunicación pública desde un sitio ajeno al servicio TDR. Tampoco se autoriza la presentación de su contenido en una ventana o marco ajeno a TDR (framing). Esta reserva de derechos afecta tanto al contenido de la tesis como a sus resúmenes e índices. WARNING. Access to the contents of this doctoral thesis and its use must respect the rights of the author. It can be used for reference or private study, as well as research and learning activities or materials in the terms established by the 32nd article of the Spanish Consolidated Copyright Act (RDL 1/1996). Express and previous authorization of the author is required for any other uses. In any case, when using its content, full name of the author and title of the thesis must be clearly indicated. Reproduction or other forms of for profit use or public communication from outside TDX service is not allowed. Presentation of its content in a window or frame external to TDX (framing) is not authorized either. These rights affect both the content of the thesis and its abstracts and indexes. UNIVERSITAT ROVIRA I VIRGILI ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS. Thomas Holtij Dipòsit Legal: T 1670-2014 UNIVERSITAT ROVIRA I VIRGILI ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS. Thomas Holtij Dipòsit Legal: T 1670-2014 UNIVERSITAT ROVIRA I VIRGILI ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS. Thomas Holtij Dipòsit Legal: T 1670-2014 UNIVERSITAT ROVIRA I VIRGILI ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS. Thomas Holtij Dipòsit Legal: T 1670-2014 . Thomas Holtij ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS DOCTORAL THESIS Supervised by Prof. Dr. Benjamín Iñíguez and Prof. Dr.-Ing. Alexander Kloes Department of Electronic, Electrical and Automatic Control Engineering Tarragona 2014 UNIVERSITAT ROVIRA I VIRGILI ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS. Thomas Holtij Dipòsit Legal: T 1670-2014 UNIVERSITAT ROVIRA I VIRGILI ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS. Thomas Holtij Dipòsit Legal: T 1670-2014 Statement of Supervision Department of Electronic, Electric and Automatic Engineering (DEEEA) Av. Paisos Catalans 26, Campus Sescelades 43007, Tarragona, Spain Phone: +34 977 558524 Fax: +34 977 559605 I STATE that the present study, entitled: "ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS", presented by Thomas Holtij for the award of the degree of the Doctor, has been carried out under my supervision at the Department of Electronic, Electrical and Automatic Control Engineering of this university, and that it fulfills all the requirements to be eligible for the European Doctorate Award. Tarragona (Spain), August 19, 2014 Prof. Dr. Benjamín Iñíguez, Doctoral Thesis Supervisor Prof. Dr.-Ing. Alexander Kloes, Doctoral Thesis Co-Supervisor ii UNIVERSITAT ROVIRA I VIRGILI ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS. Thomas Holtij Dipòsit Legal: T 1670-2014 UNIVERSITAT ROVIRA I VIRGILI ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS. Thomas Holtij Dipòsit Legal: T 1670-2014 Statement of Authorship Research Group Nanoelectronics / Device Modeling Wiesenstrasse 14 35390, Giessen, Germany Phone: +49 641 309-1968 Fax: +49 641 309-2901 I STATE that this document has been composed by myself and describes my own work, unless otherwise acknowledged in the text. Parts that are direct quotes or paraphrases are identified as such. It has not been accepted in any previous application for a degree. All sources of information have been specifically acknowledged. Giessen (Germany), August 19, 2014 Thomas Holtij, M. Eng. iv UNIVERSITAT ROVIRA I VIRGILI ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS. Thomas Holtij Dipòsit Legal: T 1670-2014 UNIVERSITAT ROVIRA I VIRGILI ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS. Thomas Holtij Dipòsit Legal: T 1670-2014 Acknowledgments This doctoral study would not have been possible without the help of many people. I wish to express my deepest thanks to all those who have made this thesis become materialized. First of all, I want to thank my supervisors Prof. Dr. Benjamín Iñíguez and Prof. Dr.-Ing. Alexander Kloes, who supported me throughout the entire thesis. I want to thank them for directing me to interesting topics of research and at the same time encouraged me to follow my own ideas. The many useful discussions and advices on compact modeling and device simulations made me stay confident and helped me to finalize this work. Thanks to my former colleague Dr. Mike Schwarz for the many discussions on modeling the electrostatic potential of MOSFETs and the enjoyable time we had at several conferences. I say thank you to my colleague Michael Graef who helped me handling different TCAD simulations and modeling problems, Fabian Hosenfeld for supporting me solving several complex mathematical tasks and to the complete Research Group Nanoelectronics / Device Modeling, at the Technische Hochschule Mittelhessen for the productive time. Special thanks go to Dr. Ghader Darbandy (Technical University Dresden, Germany), Dr. Francois Lime, Dr. Nae Bogdan Mihai (University Rovira i Virgili, Tarragona, Spain) and Dr. Romain Ritzenthaler (IMEC at Brussels, Belgium) for the useful collaboration during the last three years. The discussions on technical topics made me see problems from a different angle. Thanks for your help concerning technical matters and the administrative procedures. To Dr. Maria Mendez Malaga and Dr. Ghader Darbandy for the nice time we had at our meetings. And to Dr. Daniel Tomaszewski (ITE Warsaw, Poland) for the many helpful discussions about junctionless MOSFETs during several conferences and via e-mail. To all my colleagues at the Technische Hochschule Mittelhessen, in particular Frank Wasinski, Michael Hof, Johannes Friedrich and Fabian Hosenfeld for making the lunch time at work an enjoyable and relaxing atmosphere. Also to Martin Jung, who supported me during my diploma studies at the Fachhochschule Giessen-Friedberg, Giessen, Germany. Special thanks also to my colleague Michael Graef and to Dr. Ghader Darbandy for proofreading this thesis. Last but not least I wish to express my deepest thanks to my family and my beloved fiancée Wibke Fuhrberg. You strongly supported me not only during these doctoral studies, but also during all other, sometimes difficult, chapters of my life! ... and many others... vi UNIVERSITAT ROVIRA I VIRGILI ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS. Thomas Holtij Dipòsit Legal: T 1670-2014 UNIVERSITAT ROVIRA I VIRGILI ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS. Thomas Holtij Dipòsit Legal: T 1670-2014 "Where Do We Come From? What Are We? Where Are We Going?" Paul Gauguin UNIVERSITAT ROVIRA I VIRGILI ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS. Thomas Holtij Dipòsit Legal: T 1670-2014 UNIVERSITAT ROVIRA I VIRGILI ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS. Thomas Holtij Dipòsit Legal: T 1670-2014 List of Publications Journals • T. Holtij, M. Graef, A. Kloes, B. Iñíguez, "3-D Compact Model for Nanoscale Junctionless Triple-Gate Nanowire MOSFETs, Including Simple Treatment of Quantization Effects", submitted to: Special Issue of Solid-State Electronics, dedicated to EUROSOI 2014 • T. Holtij, M. Graef, A. Kloes, B. Iñíguez, "Modeling and Performance Study of Nanoscale Double Gate Junctionless and Inversion Mode MOSFETs Including Carrier Quantization Effects", available online and accepted for publication in a future issue of: Elsevier Microelectronics Journal • T. Holtij, M. Graef, F. Hain, A. Kloes, B. Iñíguez, "Compact Model for Short-Channel Junctionless Accumulation Mode (JAM) Double Gate MOSFETs", IEEE Trans. Electron
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