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Scaling and Technology Issues for Soft Error Rates Allan Presented at the 4th Annual Research Conference on Reliability, Stanford University, October 2000 Scaling and Technology Issues for Soft Error Rates Allan. H. Johnston Jet Propulsion Laboratory California Institute of Technology Pasadena, California Abstract - The effects of device technology and scaling on Figure 2 shows how various contributions to the soft error rates are discussed, using information obtained from terrestrial error rate are affected by critical charge [3]. The both the device and space communities as a guide to determine work was done with SRAM cells, fabricated with a 0.35 µm the net effect on soft errors. Recent data on upset from high- CMOS process. For critical charge < 35 fC it is possible to energy protons indicates that the soft-error problem in DRAMs and microprocessors is less severe for highly scaled devices, in upset the cell with alpha particles. The largest contribution contrast to expectations. Possible improvements in soft-error from alphas comes from solder, but there is also a significant rate for future devices, manufactured with silicon-on-insulator contribution from impurities in the metallization. By technology, are also discussed. increasing the critical charge it is possible to eliminate errors from alpha particles, but terrestrial neutrons are still able to I. INTRODUCTION induce errors. The gradual decrease in neutron-induced error Soft-errors from alpha particles were first reported by rate with increasing critical charge is due to the distribution May and Woods [1], and considerable effort was spent by the of neutron energies, which extends over a very wide range. semiconductor device community during the ensuing years to Figure 2. Various contributions to error rate for a small-area deal with the problem of errors from alpha particles in 10-8 packaging, metallization and other materials. This included 1.2 um x 1.2 um SRAM junction modifications in device design to reduce the inherent 10-9 Volume = 6 um3 ) t sensitivity to extraneous charge, as well as application of i b / r Neutron (sea level flux) topical shielding and improvements in material purity. u 10-10 o α 2 h Alpha (AI wire, 0.001 -cm /hr) Atmospheric neutrons can also produce soft errors. One / s r α 2 o Alpha (PbSn solder, 0.01 -cm /hr) example is shown in Figure 1, after Lage, et al.[2], which r r -11 e 10 shows the increase in measured soft error rate when ( e t experiments were done on SRAMs using alpha sources with a R -12 r 10 o different intensities. The increased error rate is due to the r r presence of atmospheric neutrons that have a larger relative E influence when alpha experiments are done for long time 10-13 periods using low-intensity sources. -14 100,000 10 0 50 100 150 200 Critical Charge (fC) 24fC SRAM cell, fabricated with a 0.35 µm CMOS process, vs. critical Increased error rate charge (after Tosaka, et al. [3]). with low-intensity ) 10,000 S sources In parallel with the work by commercial manufacturers, T I F ( the space community began to be concerned about soft errors e t 48fC in the more rigorous environment of space at about the same a 1,000 R 32fC time period [4,5]. The most severe soft-error effect in space r o r r is due to high-energy galactic cosmic rays, which have E t specific ionization values that are many orders of magnitude f o 100 S above that of alpha particles. Those effects, just as for alpha Extrapolated value from m particles, are due to direct ionization along the path of the e tests with high-intensity t s alpha source y incident particle. S 10 The space community also recognized that indirect reactions from high-energy protons could cause soft errors After Lage, et al., 1993 IEDM [6-8]. The first experimental observations of proton upset 1 were made in 1979. Subsequently, high-energy protons have 0.010.1 1 10 100 1000 been shown to cause many different effects in space Accelerated Soft-Error Rate (Hits/hr) environments, including latchup in some devices [9], which Figure 1. Increase in soft-error rate of an SRAM when low- is of particular concern because it is potentially catastrophic. intensity alpha particle sources are used. The space community routinely tests advanced devices - - - - - - - with high energy protons, and that data, which is widely The research in this paper was carried out by the Jet Propulsion available, provides an interesting set of data for comparisons Laboratory, California Institute of Technology, under contract with the National Aeronautics and Space Adminstration (NASA) under with scaling predictions and modeling that can be directly the NASA Electronics Parts and Packaging Program (ERC). applied to neutron upset in the terrestrial environment. The 1 Presented at the 4th Annual Research Conference on Reliability, Stanford University, October 2000 space community also routinely tests devices with heavy high-energy neutrons. This allows test results for high- ions. For example, Figure 3 shows how the cross sections of energy protons to be extended directly to neutron internal registers and cache memory of a microprocessor environments, which has been noted by workers in both the increase when tests are done with long-range ions that have semiconductor and space environments [10,11]. The different values of LET. (For reference, the LET of a 5-MeV proposed standard for evaluating SER rates in terrestrial alpha particle is 1 MeV-cm2/mg). The heavy-ion data applications allows protons to be used as an alternative to provides a direct indication of the specific ionization track tests with neutron sources [12]. density required for upset, and is a useful way to compare the Although cross sections for protons and neutrons are upset sensitivity of different devices. nearly the same at high energies, that is not the case for lower energies (<50 MeV). At low energies, protons cross 10-1 sections increase because of Coulomb interactions with the Dynamic Test (Cache Enabled) lattice atoms, causing the cross section to increase with -2 10 decreasing energy. 10-3 In addition, the neutron energy distribution of the ) t uncharged neutrons in terrestrial environments extends to i b / 10-4 much lower energies than the distribution of protons within 2 m c Registers spacecraft because even moderate amounts of shielding ( 10-5 n eliminate most of the low-energy protons in space. Figure 4 o i t c -6 compares the distribution of atmospheric neutrons (actually e 10 S the energy distribution of the white neutron source at Los s s -7 Alamos National Laboratory) with the typical distribution of o 10 r C proton energies in spacecraft. -8 10 ) V -2 109 e 10 -9 M 10 - c e s - -3 10-10 2 10 108 0 10 20 30 40 m protons c / 2 s LET (MeV-cm /mg) e l c i -4 7 t 10 10 r neutrons a p Figure 3. Dependence of cross section on linear energy transfer for ( x u a microprocessor. The upset threshold is slightly above the LET for l 10-5 106 F a 5-MeV alpha particle. l a i t n e II. SPACE AND TERRESTRIAL ENVIRONMENTS r -6 5 e 10 10 f f i A. Comparison of Environments D 10-7 104 The high-energy cosmic rays that spacecraft encounter 1 10 100 1000 are largely shielded by the earth’s atmosphere. Consequently Neutron or Proton Energy, MeV they do not occur in significant numbers in terrestrial applications. However, the interaction of cosmic rays in the Figure 4. Energy distributions of atmospheric neutrons on the upper atmosphere produces secondary particles, including ground and protons in an earth-orbiting spacecraft. neutrons. The neutrons have a low interaction probability with the atmosphere, and significant numbers of energetic The point of this figure is to show that the proton neutrons arrive at the earth’s surface. spectrum in space decreases at low energies, reducing the importance (and interest) of low energy protons in causing Although spacecraft are usually not concerned with errors in spacecraft. On the other hand, the relative number neutrons, most space environments include high-energy of neutrons in terrestrial environments continues to increase protons with a wide distribution of energies. Direct at low energies. Thus, the soft-error rate problem on the ionization from protons is generally too low to be of concern ground is much more affected by reductions in the threshold in microelectronics. However, protons can produce nuclear energy for errors from neutron-induced reactions compared reactions in silicon, and the secondary reaction products from to the soft-error problem in space (from protons). reactions or nuclear collisions -- which have relatively short range -- produce ionization tracks with much higher charge B. Recoil Energy Distribution densities compared to those generated along the path of the A great deal of experimental work has been done to high-energy protons that initiate the reaction. However, the investigate the distribution of recoil energies when cross section for such indirect processes is much smaller than experiments are done with monoenergetic protons [13,14]. for direct ionization because the incoming particle has to That work has shown that there is a continuous distribution undergo a nuclear collision in order to produce the reaction of recoil energies that decreases up to a maximum energy. (nuclear cross sections are typically 10-4 to 10-5 lower). For silicon, the maximum recoil energy due to elastic Protons with energies above 50 MeV have cross sections collisions is 13.6% of the energy of the incident particle. for nuclear reactions that are nearly identical to those for This means that for 100 MeV protons (or neutrons), the 2 Presented at the 4th Annual Research Conference on Reliability, Stanford University, October 2000 1.2 maximum total energy of a recoil is 13.6 MeV.
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