Radiation Hardening Efficiency of Gate Sizing and Transistor Stacking Based on Standard Cells
Radiation hardening efficiency of gate sizing and transistor stacking based on standard cells Y.Q. Aguiar, Frédéric Wrobel, S. Guagliardo, J.-L. Autran, P. Leroux, F. Saigné, A.D. Touboul, V. Pouget To cite this version: Y.Q. Aguiar, Frédéric Wrobel, S. Guagliardo, J.-L. Autran, P. Leroux, et al.. Radiation hardening efficiency of gate sizing and transistor stacking based on standard cells. Microelectronics Reliability, Elsevier, 2019, 100-101, pp.113457. 10.1016/j.microrel.2019.113457. hal-02515096 HAL Id: hal-02515096 https://hal.archives-ouvertes.fr/hal-02515096 Submitted on 24 Mar 2020 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Radiation Hardening Efficiency of Gate Sizing and Transistor Stacking based on Standard Cells Y. Q. Aguiara,*, F. Wrobela, S. Guagliardoa, J-L. Autranb, P. Lerouxc, F. Saignéa, A. D. Touboula and V. Pougeta a Institut d’Electronique et des Systèmes, University of Montpellier, Montpellier, France b Institut Materiaux Microelectronique Nanoscience de Provence, Aix-Marseille University, Marseille, France c Advanced Integrated Sensing Lab, KU Leuven University, Leuven, Belgium Abstract Soft error mitigation schemes inherently lead to penalties in terms of area usage, power consumption and/or performance metrics.
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