CMOS Inverter As Analog Circuit: an Overview
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Transistor Circuit Guidebook Byron Wels TAB BOOKSBLUE RIDGE SUMMIT, PA
TAB BOOKS No. 470 34.95 By Byron Wels TransistorCircuit GuidebookByronWels TABBLUE RIDGE BOOKS SUMMIT,PA. 17214 Preface beforemeIa supposepioneer (along the my withintransistor firstthe many field.experiencewith wasother Weknown. World were using WarUnlike solid-stateIIsolid-state GIs) today's asdevices somewhat experimen- receivers marks of FIRST EDITION devicester,ownFirst, withsemiconductors! youwith a choice swipedwhichor tank. ofto a sealed,Here'sexperiment, pairThen ofhow encapsulated, you earphones we carefullywe did had it: from totookand construct the veryonenearest exoticof our the THIRDSECONDFIRST PRINTING-SEPTEMBER PRINTING-AUGUST PRINTING-JANUARY 1972 1970 1968 plane,wasyouAnphonesantenna. emptywound strung jeep,apart After toiletfull outand ofclippingas paper wire,unwoundhigh closelyrollandthe servedascatchthe far spaced.wire offas as itfrom a thewouldsafetyThe thecoil remaining-pin,magnetreach-for form, you inside.which stuckwire the Copyright © 1968by TAB BOOKS coatedNext,it into youneeded,a hunkribbons of -ofwooda razor -steel, soblade.the but point Oh,aItblued was noneprojected placedblade of the -quenchat so fancy right the pointplastic-bluedangles.of -, Reproduction or publicationPrinted inof the ofAmerica the United content States in any manner, with- themindfoundphoneground pin you,the was couldserved right not wired contact lacquerspotas toa onground blade, it. theblued.blade'sAconnector, pin,bayonet bluing,and stuck antennaand you hilt thecould coil.-deep other actuallyIfin ear- youthe isoutherein. assumed express -
Hybrid Memristor–CMOS Implementation of Combinational Logic Based on X-MRL †
electronics Article Hybrid Memristor–CMOS Implementation of Combinational Logic Based on X-MRL † Khaled Alhaj Ali 1,* , Mostafa Rizk 1,2,3 , Amer Baghdadi 1 , Jean-Philippe Diguet 4 and Jalal Jomaah 3 1 IMT Atlantique, Lab-STICC CNRS, UMR, 29238 Brest, France; [email protected] (M.R.); [email protected] (A.B.) 2 Lebanese International University, School of Engineering, Block F 146404 Mazraa, Beirut 146404, Lebanon 3 Faculty of Sciences, Lebanese University, Beirut 6573, Lebanon; [email protected] 4 IRL CROSSING CNRS, Adelaide 5005, Australia; [email protected] * Correspondence: [email protected] † This paper is an extended version of our paper published in IEEE International Conference on Electronics, Circuits and Systems (ICECS) , 27–29 November 2019, as Ali, K.A.; Rizk, M.; Baghdadi, A.; Diguet, J.P.; Jomaah, J. “MRL Crossbar-Based Full Adder Design”. Abstract: A great deal of effort has recently been devoted to extending the usage of memristor technology from memory to computing. Memristor-based logic design is an emerging concept that targets efficient computing systems. Several logic families have evolved, each with different attributes. Memristor Ratioed Logic (MRL) has been recently introduced as a hybrid memristor–CMOS logic family. MRL requires an efficient design strategy that takes into consideration the implementation phase. This paper presents a novel MRL-based crossbar design: X-MRL. The proposed structure combines the density and scalability attributes of memristive crossbar arrays and the opportunity of their implementation at the top of CMOS layer. The evaluation of the proposed approach is performed through the design of an X-MRL-based full adder. -
Three-Dimensional Integrated Circuit Design: EDA, Design And
Integrated Circuits and Systems Series Editor Anantha Chandrakasan, Massachusetts Institute of Technology Cambridge, Massachusetts For other titles published in this series, go to http://www.springer.com/series/7236 Yuan Xie · Jason Cong · Sachin Sapatnekar Editors Three-Dimensional Integrated Circuit Design EDA, Design and Microarchitectures 123 Editors Yuan Xie Jason Cong Department of Computer Science and Department of Computer Science Engineering University of California, Los Angeles Pennsylvania State University [email protected] [email protected] Sachin Sapatnekar Department of Electrical and Computer Engineering University of Minnesota [email protected] ISBN 978-1-4419-0783-7 e-ISBN 978-1-4419-0784-4 DOI 10.1007/978-1-4419-0784-4 Springer New York Dordrecht Heidelberg London Library of Congress Control Number: 2009939282 © Springer Science+Business Media, LLC 2010 All rights reserved. This work may not be translated or copied in whole or in part without the written permission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York, NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights. Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com) Foreword We live in a time of great change. -
ECE 255, MOSFET Basic Configurations
ECE 255, MOSFET Basic Configurations 8 March 2018 In this lecture, we will go back to Section 7.3, and the basic configurations of MOSFET amplifiers will be studied similar to that of BJT. Previously, it has been shown that with the transistor DC biased at the appropriate point (Q point or operating point), linear relations can be derived between the small voltage signal and current signal. We will continue this analysis with MOSFETs, starting with the common-source amplifier. 1 Common-Source (CS) Amplifier The common-source (CS) amplifier for MOSFET is the analogue of the common- emitter amplifier for BJT. Its popularity arises from its high gain, and that by cascading a number of them, larger amplification of the signal can be achieved. 1.1 Chararacteristic Parameters of the CS Amplifier Figure 1(a) shows the small-signal model for the common-source amplifier. Here, RD is considered part of the amplifier and is the resistance that one measures between the drain and the ground. The small-signal model can be replaced by its hybrid-π model as shown in Figure 1(b). Then the current induced in the output port is i = −gmvgs as indicated by the current source. Thus vo = −gmvgsRD (1.1) By inspection, one sees that Rin = 1; vi = vsig; vgs = vi (1.2) Thus the open-circuit voltage gain is vo Avo = = −gmRD (1.3) vi Printed on March 14, 2018 at 10 : 48: W.C. Chew and S.K. Gupta. 1 One can replace a linear circuit driven by a source by its Th´evenin equivalence. -
LDMOS for Improved Performance
> Submitted to IEEE Transactions on Electron Devices < Final MS # 8011B 1 Extended-p+ Stepped Gate (ESG) LDMOS for Improved Performance M. Jagadesh Kumar, Senior Member, IEEE and Radhakrishnan Sithanandam Abstract—In this paper, we propose a new Extended-p+ Stepped Gate (ESG) thin film SOI LDMOS with an extended-p+ region beneath the source and a stepped gate structure in the drift region of the LDMOS. The hole current generated due to impact ionization is now collected from an n+p+ junction instead of an n+p junction thus delaying the parasitic BJT action. The stepped gate structure enhances RESURF in the drift region, and minimizes the gate-drain capacitance. Based on two- dimensional simulation results, we show that the ESG LDMOS exhibits approximately 63% improvement in breakdown voltage, 38% improvement in on-resistance, 11% improvement in peak transconductance, 18% improvement in switching speed and 63% reduction in gate-drain charge density compared with the conventional LDMOS with a field plate. Index Terms—LDMOS, silicon on insulator (SOI), breakdown voltage, transconductance, on- resistance, gate charge I. INTRODUCTION ATERALLY double diffused metal oxide semiconductor (LDMOS) on SOI substrate is a promising Ltechnology for RF power amplifiers and wireless applications [1-5]. In the recent past, developing high voltage thin film LDMOS has gained importance due to the possibility of its integration with low power CMOS devices and heterogeneous microsystems [6]. But realization of high voltage devices in thin film SOI is challenging because floating body effects affect the breakdown characteristics. Often, body contacts are included to remove the floating body effects in RF devices [7]. -
JFE150 Ultra-Low Noise, Low Gate Current, Audio, N-Channel JFET Datasheet
JFE150 SLPS732 – JUNE 2021 JFE150 Ultra-Low Noise, Low Gate Current, Audio, N-Channel JFET 1 Features and yields excellent noise performance for currents from 50 μA to 20 mA. When biased at 5 mA, the • Ultra-low noise: device yields 0.8 nV/√Hz of input-referred noise, – Voltage noise: giving ultra-low noise performance with extremely high input impedance (> 1 TΩ). The JFE150 also • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA features integrated diodes connected to separate • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz clamp nodes to provide protection without the addition • Low gate current: 10 pA (max) of high leakage, nonlinear external diodes. • Low input capacitance: 24 pF at VDS = 5 V The JFE150 can withstand a high drain-to-source • High gate-to-drain and gate-to-source breakdown voltage of 40-V, as well as gate-to-source and gate- voltage: –40 V to-drain voltages down to –40 V. The temperature • High transconductance: 68 mS range is specified from –40°C to +125°C. The device • Packages: Small SC70 and SOT-23 (Preview) is offered in 5-pin SOT-23 and SC-70 packages. 2 Applications Device Information • Microphone inputs PART NUMBER PACKAGE(1) BODY SIZE (NOM) • Hydrophones and marine equipment SOT-23 (5) - Preview 2.90 mm × 1.60 mm JFE150 • DJ controllers, mixers, and other DJ equipment SC-70 (5) 2.00 mm × 1.25 mm • Professional audio mixer or control surface • Guitar amplifier and other music instrument (1) For all available packages, see the package option addendum at the end of the data sheet. -
Advanced MOSFET Structures and Processes for Sub-7 Nm CMOS Technologies
Advanced MOSFET Structures and Processes for Sub-7 nm CMOS Technologies By Peng Zheng A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in Engineering - Electrical Engineering and Computer Sciences in the Graduate Division of the University of California, Berkeley Committee in charge: Professor Tsu-Jae King Liu, Chair Professor Laura Waller Professor Costas J. Spanos Professor Junqiao Wu Spring 2016 © Copyright 2016 Peng Zheng All rights reserved Abstract Advanced MOSFET Structures and Processes for Sub-7 nm CMOS Technologies by Peng Zheng Doctor of Philosophy in Engineering - Electrical Engineering and Computer Sciences University of California, Berkeley Professor Tsu-Jae King Liu, Chair The remarkable proliferation of information and communication technology (ICT) – which has had dramatic economic and social impact in our society – has been enabled by the steady advancement of integrated circuit (IC) technology following Moore’s Law, which states that the number of components (transistors) on an IC “chip” doubles every two years. Increasing the number of transistors on a chip provides for lower manufacturing cost per component and improved system performance. The virtuous cycle of IC technology advancement (higher transistor density lower cost / better performance semiconductor market growth technology advancement higher transistor density etc.) has been sustained for 50 years. Semiconductor industry experts predict that the pace of increasing transistor density will slow down dramatically in the sub-20 nm (minimum half-pitch) regime. Innovations in transistor design and fabrication processes are needed to address this issue. The FinFET structure has been widely adopted at the 14/16 nm generation of CMOS technology. -
50 Simple L.E.D. Circuits
50 Simple L.E.D. Circuits R.N. SOAR r de Historie v/d Radi OTH'IEK 50 SIMPLE L.E.D. CIRCUITS by R. N. SOAR BABANI PRESS The Publishing Division of Babani Trading and Finance Co. Ltd. The Grampians Shepherds Bush Road London W6 7NI- England Although every care is taken with the preparation of this book, the publishers or author will not be responsible in any way for any errors that might occur. © 1977 BA BAN I PRESS I.S.B.N. 0 85934 043 4 First Published December 1977 Printed and Manufactured in Great Britain by C. Nicholls & Co. Ltd. f t* -i. • v /“ ..... tr> CONTENTS U.V.H.R* Circuit Page No. 1 LED Pilot Light......................................... 7 2 LED Stereo Beacon.................................... 8 3 Stereo Decoder Mono/Sterco Indicator . 9 4 Subminiature LED Torch........................... 10 5 Low Voltage Low Current Supply............ 11 6 Microlight Indicator .................................. 12 7 Ultra Low Current LED Switching Indicator 13 8 LED Stroboscope....................................... 14 9 12 Volt Car Circuit Tester........................... 15 10 Two Colour LED......................................... 16 11 12 Volt Car “Fuse Blown” Indicator.......... 17 12 LED Continuity Tester............................... 17 13 LED Current Overload Indicator.............. 18 14 LED Current Range Indicator................... 20 15 1.5 Volt LED “Zener”................. '............ 22 16 Extending Zener Voltage........................... 22 17 Four Voltage Regulated Supply................. 23 18 PsychaLEDic Display.................................. 24 .19 Dual Colour Display.................................... 25 20 Dual Signal Device....................................... 26 21 LED Triple Signalling.................................. 27 22 Sub-Miniature Light Source for Model Railways . 28 23 Portable Television Protection Circuit . 29 24 Improved Portable TV Protection Circuit 30 25 LED Battery Tester.............................. -
Physical Structure of CMOS Integrated Circuits
Physical Structure of CMOS Integrated Circuits Dae Hyun Kim EECS Washington State University References • John P. Uyemura, “Introduction to VLSI Circuits and Systems,” 2002. – Chapter 3 • Neil H. Weste and David M. Harris, “CMOS VLSI Design: A Circuits and Systems Perspective,” 2011. – Chapter 1 Goal • Understand the physical structure of CMOS integrated circuits (ICs) Logical vs. Physical • Logical structure • Physical structure Source: http://www.vlsi-expert.com/2014/11/cmos-layout-design.html Integrated Circuit Layers • Semiconductor – Transistors (active elements) • Conductor – Metal (interconnect) • Wire • Via • Insulator – Separators Integrated Circuit Layers • Silicon substrate, insulator, and two wires (3D view) Substrate • Side view Metal 1 layer Insulator Substrate • Top view Integrated Circuit Layers • Two metal layers separated by insulator (side view) Metal 2 layer Via 12 (connecting M1 and M2) Insulator Metal 1 layer Insulator Substrate • Top view Connected Not connected Integrated Circuit Layers Integrated Circuit Layers • Signal transfer speed is affected by the interconnect resistance and capacitance. – Resistance ↑ => Signal delay ↑ – Capacitance ↑ => Signal delay ↑ Integrated Circuit Layers • Resistance – = = = Direction of • : sheet resistance (constant) current flows ∙ ∙ • : resistivity (= , : conductivity) 1 – Material property (constant) – Unit: • : thickess (constant) Ω ∙ • : width (variable) • : length (variable) Cross-sectional area = • Example ∙ – : 17. , : 0.13 , : , : 1000 • = 17.1 -
Characterization of the Cmos Finfet Structure On
CHARACTERIZATION OF THE CMOS FINFET STRUCTURE ON SINGLE-EVENT EFFECTS { BASIC CHARGE COLLECTION MECHANISMS AND SOFT ERROR MODES By Patrick Nsengiyumva Dissertation Submitted to the Faculty of the Graduate School of Vanderbilt University in partial fulfillment of the requirements for the degree of DOCTOR OF PHILOSOPHY in Electrical Engineering May 11, 2018 Nashville, Tennessee Approved: Lloyd W. Massengill, Ph.D. Michael L. Alles, Ph.D. Bharat B. Bhuva, Ph.D. W. Timothy Holman, Ph.D. Alexander M. Powell, Ph.D. © Copyright by Patrick Nsengiyumva 2018 All Rights Reserved DEDICATION In loving memory of my parents (Boniface Bimuwiha and Anne-Marie Mwavita), my uncle (Dr. Faustin Nubaha), and my grandmother (Verediana Bikamenshi). iii ACKNOWLEDGEMENTS This dissertation work would not have been possible without the support and help of many people. First of all, I would like to express my deepest appreciation and thanks to my advisor Dr. Lloyd Massengill for his continual support, wisdom, and mentoring throughout my graduate program at Vanderbilt University. He has pushed me to look critically at my work and become a better research scholar. I would also like to thank Dr. Michael Alles and Dr. Bharat Bhuva, who have helped me identify new paths in my research and have been a constant source of ideas. I am also very grateful to Dr. W. T. Holman and Dr. Alexander Powell for serving on my committee and for their constructive comments. Special thanks go to Dr. Jeff Kauppila, Jeff Maharrey, Rachel Harrington, and Tim Haeffner for their support with test IC designs and experiments. I would also like to thank Dennis Ball (Scooter) for his tremendous help with TCAD models. -
621 212 Electronics and Communication Engineering Ec6304/Linear Integrated Circuits
DSEC/ECE/EC6304-LIC/QB 1 DHANALAKSHMI SRINIVASAN ENGINEERING COLLEGE -621 212 ELECTRONICS AND COMMUNICATION ENGINEERING EC6304/LINEAR INTEGRATED CIRCUITS QUESTION BANK UNIT 1(2 MARKS) 1. What is an integrated circuit? APRIL/MAY 2010 An integrated circuit (IC) is a miniature, low cost electronic circuit consisting of active and Passive components fabricated together on a single crystal of silicon. The active components are Transistors and diodes and passive components are resistors and capacitors. 2. What is current mirror? APRIL/MAY 2010 A constant current source (current mirror) makes use of the fact that for a transistor in the active mode of operation, the collector current is relatively independent of the collector voltage 3. What are two requirements to be met for a good current source? MAY/JUNE 2012 a. Superior insensitivity of circuit performance to power supply variations and temperature. b. More economical than resistors in terms of die area required providing bias currents of small value. c. When used as load element, the high incremental resistance of current source results in high voltage gains at low supply voltages. 4. What are all the important characteristics of ideal op-amp? APRIL/MAY 2015 Ideal characteristics of OPAMP 1. Open loop gain infinite 2. Input impedance infinite 3. Output impedance low 4. Bandwidth infinite 5. Zero offset, ie, Vo=0 when V1=V2=0 5. Define CMRR of OP-AMP APRIL/MAY 2011 The relative sensitivity of an op-amp to a difference signal as compared to a common - mode signal is called the common -mode rejection ratio. It is expressed in decibels. -
1. Draw the Circuit Diagram of Basic CMOS Gate and Explain the Operation
1. Draw the circuit diagram of basic CMOS gate and explain the operation. The basic CMOS inverter circuit is shown in below figure. It consists of two MOS transistors connected in series (1-PMOS and 1-NMOS). The P-channel device source is connected to +VDD and the N-channel device source is connected to ground. The gates of the two devices are connected together as the common input VIN and the drains are connected together as the common output VOUT. Case 1: When Input is LOW If input VIN is low then the n-channel transistor Q1 is off, and it acts as a open switch since its Vgs is 0, but the top, p-channel transistor Q2 is on, and acts as a closed switch since its Vgs is a large negative value. This produces ouput voltage approximately +VDD as shown in fig 6(a). VOUT=VDD Case 2: When Input is HIGH If input VIN is high then the n-channel transistor Q1 is on, and it acts as a closed switch , but the top, p-channel transistor Q2 is off, and acts as a open switch. This produces ouput voltage approximately 0V as shown in fig 6(b). FUNCTION TABLE: VOUT=0V INPU Q1 Q2 OUTP T UT (VIN) (VOUT) 0 ON OFF 1 1 OFF ON 0 LOGIC SYMBOL: 2. Draw the resistive model of a CMOS inverter circuit and explain its behavior for LOW and HIGH outputs. CIRCUIT BEHAVIOR WITH RESISTIVE LOADS: CMOS gate inputs have very high impedance and consume very little current from the circuits that drive them.