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Indium Zinc Oxide As Conductive Coating: a Review

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Indium Zinc Oxide As Conductive Coating: a Review 1R5e0v. Adv. Mater. Sci. 49 (2017) 150-157O. Edynoor, A.R.M. Warikh, T. Moriga, K. Murai and M.E.A. Manaf TRANSPARENT COATING OXIDE – INDIUM ZINC OXIDE AS CONDUCTIVE COATING: A REVIEW O. Edynoor1,2,3, A.R.M. Warikh1,2, T. Moriga2,3, K. Murai3 and M.E.A. Manaf3 1Department of Materials Engineering, Faculty of Manufacturing Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia 2Tokushima-UTeM Academic Center, Tokushima University, 2-1 Minami-Josanjima, 770-8506 Tokushima, Japan 3Department of Chemical Science and Technology, Graduate School Advanced Technology and Science, Tokushima University, 2-1 Minami-Josanjima, 770-8506 Tokushima, Japan Received: March 13, 2017 Abstract. This paper reviews the transparent conductive oxide with emphasis on indium doped zinc oxide (TCO-IZO). TCO has been growing faster year by year, especially in semiconductor, solar devices and electronic field. There are many methods that can be used to produce IZO coating such as dip coating, sol-gel, magnetron sputtering, thermal evaporation and atomic layer deposition. IZO has gained significant attention for transparent electrodes due to its good elec- trical conductivity, high visible transmittance in the range from 400 to 900 nm, large work function, excellent surface smoothness, and low deposition temperature. Many studies have been done on the IZO coating onto glass substrate, but there is still less study on the low processing temperature substrates such as polymers and natural fibres. Parameters such as coating thick- ness, annealing temperature and number of cycles have to be considered in order to achieve the desired electrical conductivity and optical properties of IZO. 1. INTRODUCTION 1020 cm-3 and resistivity of about 10-4 ohm.cm. It combines two important properties which are good Transparent conducting oxide (TCO) and its mix- electrical conduction and high transmission in the tures have been extensively used in applications visible range of light (380-780 nm). Achieving high such as flat panel screen, in touch panels, solar electrical conductivity and good optical transmis- cells, and other future devices which exhibit capa- sion in TCO materials is crucial for most applica- bility of transporting electrical charge and transmit- tions [1]. Most of the TCO materials are n-type semi- ting visible photon. They are also essentially used conductors, but p-type TCO materials are re- in electrochromic windows, oven windows and en- searched and developed. Such TCO include: ergy-efficient windows that release and trapped heat ZnO:Mg, ZnO:N, IZO, NiO, NiO:Li, CuAlO , Cu SrO , during winter and summer. TCO is a very useful 2 2 2 and CuGaO thin films. At present, these materials material for transparent optoelectronics application 2 have not yet found place in actual applications. For due to its unique features of optical properties in the purpose of improving TCO coating properties, the visible light region such as high optical trans- new materials consisting of ternary compound ox- mittance over ~85% and wide optical band gap ides based on ZnO have been investigated. For ex- greater than 3 eV and controllable electrical con- ample, ternary compound oxides such as In-doped ductivity such as carrier concentrations of at least Corresponding author: A.R.M. Warikh, e-mail: [email protected] © 2017 Advanced Study Center Co. Ltd. Transparent coating oxide - Indium Zinc oxide as conductive coating: a review 151 ZnO (IZO), Al-doped ZnO (AZO), Ti-doped ZnO (TZO), are wide material availability, non-toxicity and easy and Si-doped ZnO (SZO) have attracted consider- handling that makes ZnO suitable for wide area of able attention as alternative materials for ITO. In- applications [9]. In comparison with indium tin ox- dium-tin oxide (ITO) films are the most extensively ide (ITO), ITO has been mainly used as TCO anode studied and commonly used as TCO film since its because of its high conductivity, large work function film has high electrical conductivity and high trans- and transparency over the visible range [10]. Pure parency as well as ease of fabrication on glass sub- ZnO has high resistivity and well-known as n-type strates at a substrate temperature over 473K. How- semiconductor. Addition of indium impurity will sub- ever, amorphous ITO films exhibit a decrease in elec- stitute Zn because of the similarity in ionic radius. trical conductivity and optical transparency with time Since Indium has one more electron than Zn, it acts and have a very poor chemical stability. These prob- as donor impurity and creates an n-semiconductor lems can be solved by using IZO films that can be [1]. Doping directly affects carrier concentration and deposited using variety of techniques and exhibit influences conductivity in turn. Although introduc- excellent chemical stability with highly electrical ing impurities is necessary, but the concentration conductivity and optical transparency [2-5]. has a limitation; otherwise, a very high doping level Recently, zinc oxide or impurity (B, Al, Ga, In, will result in high free carrier absorption, high plasma and Zr) doped zinc oxide films have been investi- resonance reflectivity, and low visible wavelength gated because of its nontoxicity, inexpensiveness transparency. IZO has significant attention for trans- and availability. The development of IZO coating onto parent electrodes due to its good electrical conduc- low processing temperature material such as natu- tivity, high visible transmittance in the range from 400 ral fiber is challenging yet promising as it has not to 900 nm, large work function, excellent surface been covered by previous researcher. The recent smoothness, and low deposition temperature [11]. increased demand and emerging interest in the de- Indium doped zinc oxide film was deposited from velopment of electrically conductive polymer com- mixed precursor of indium and zinc salts in the posites make the prospect of IZO coating on natu- atomic percent ratio, In/Zn = 1% – 9% using dip ral fiber to be very interesting as it has the potential coating method. As a result, doping range between to be utilized as conductive filler and reinforcement. 1% - 5% demonstrated the lowest electrical resis- tivity, indicating an increase in donor concentration, 2. TCO MATERIALS – ZINC OXIDE which is attractive for many optical and electrical (ZnO) applications. The donor action of indium compen- sated the grain boundary scattering leading to de- ZnO has direct band gap semiconductor of 3.27 eV crease in film resistivity. As the doping concentra- and has been recognized for its promising applica- tion increased, the grain size decreased due to de- tions in blue/UV optoelectronics, spintronic devices, formation. Though the carrier concentration is ex- surface acoustic wave devices and sensor applica- pected to increase by indium doping, the smaller tions. El Yamny et al. (2012) reported that undoped grain size enhances the grain boundary scattering of ZnO thin films are not stable at high tempera- and hence leading to an increase in the resistance tures and can be improved by introducing impuri- at higher indium content [6]. Increased dopant to ties into the ZnO host lattice, which dramatically more than 6 at.% changed the n-type semiconduc- reduces this disadvantage [6]. Doping of ZnO with tor to p-type [1] as previously studied using 2, 4, 6, elements of Group XIII such as B, Al, In, Ga in- 8, 16, and 32 at.% of dopant concentration. Con- creases the conductivity of the ZnO thin films. The siderable point in [1] is that of converting n-type to doping process is performed by means of replacing p-type semiconductor with increasing impurity 2+ Zn atoms with impurity of higher valence. It is worth (higher than 6%). It was found that conductivity ini- mentioning that the efficiency of the dopant element tially decreased as converting semiconductor (n-type depends on its electronegativity and difference in to p-type) and decreasing its carrier concentration. the ionic radius as compared to zinc. Aluminum and But following the increasing impurity, the carrier indium are well-known dopants for n-type ZnO and concentration increases so that the lowest resistiv- have been studied to some extent [7]. Transparent ity was observed with impurity of 32% [1]. conducting electrodes for thin solar cells has iden- tified zinc oxide as one of the best option due to its 3. TYPE OF SUBSTRATES high chemical stability against reducing environment [8], textured surface and the simultaneous concur- Recently, transparent conductive films have been rence of high transparency in the visible region as prepared on plenty of different substrates, such as well as highly conductive. Some other advantages glass, sapphire, and polymer as studied by previ- 152 O. Edynoor, A.R.M. Warikh, T. Moriga, K. Murai and M.E.A. Manaf Fig.1. Stages of the dip coating process. ous researchers [1,12-14]. Each substrate has their RF magnetron sputtering, sol-gel process, electro- own specific properties that may cater for different chemical deposition, molecular beam epitaxy (MBE), needs. For example, glass substrates are heavy pulsed laser deposition (PLD) and metal organic and brittle, whereas polymeric substrates such poly- chemical vapor deposition [6]. Due to the very high ethylene terephthalate (PET) are lightweight, un- deposition rate, electron beam evaporation method breakable and conveniently portable. Substrates has potential industrial application [20]. Sputtering nature alone may affect the microstructures, crys- can be used for coating large area of substrates at tallization, morphology and electrical properties of high rate and with competitive costs compared to films. The interest in natural fiber is rapidly growing other methods [21]. TCO based on indium doped either in terms of fundamental research or actual zinc oxide films in the nano scales have been suc- industrial application. They are renewable, cheap, cessfully prepared using combination between dip completely or partially recyclable, and biodegrad- coating and thermal decomposition process [6].
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