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UTC Product Introduction UNISONIC TECHNOLOGIES CO., LTD. http://www.unisonic.com.tw UTC Product Introduction 1 Integrated Device Manufacturer Site Capacity 1. Circuit design Power & Analog Integrated Circuit Taiwan x 2 2. Pattern layout Design High-quality Semiconductor Device China x 6 3. Process development (XiaMen) Jaysun 6” CMOS/BiCMOS/DMOS Semiconductor 50k->100k(2019)/ month Manufacturing Wafer (FuZhou) 8”,6”CMOS/Bipolar/BiCMOS Vertical Fushun, Heshun 100k / month Integration Microelectronics (FuZhou) Fushun Packaging Assembly / Final test Semiconductor 400M / month Manufacturing Taiwan, China, Korea, Japan, Sales Germany, Turkey, USA Europe China Korea Japan Turkey USA India Taiwan ASEAN 2 Product Tree IC (Integrated Circuit) Discrete Component PWM Controller Lighting Driver FRED Diode Bridge Rectifier Super-junction Photo-Coupler Voltage Reference Schottky Rectifier MOSFET DC Converter Regulator / LDO Low-VF Rectifier Planar MOSFET USB Power Switch Reset / Volt. Detect Digital Transistor Trench MOSFET Comparator 74- Logic IC Power Transistor JFET Op Amplifier Audio IC / Amplifier RS-232/485 IC Darlington Driver TRIAC SCR Hall IC Special IC IGBT TVS / ESD Array 3 Power / Lighting Application Mobile Charger AC-DC PWM Fly-back Green Mode (60W) (cellphone, battery pack, Controller IC Primary-side Regulation (20W) USB powered device…) Isolated PSR driver Lighting Driver Adaptor Non-isolated buck / linear driver Photo-Coupler (Laptop, set-top box, WiFi router, monitor…) 2nd-side Volt. Ref. (TL431) supporting IC CC/CV Circuit (TL431+Op Amp) Power Module Supervisory IC (Desktop, PoS, server, Bridge Rectifier (ABS/DFM/MBF/MBS) whitegoods, TV…) Fast-recovery Diode (SMD/THD/Axial) High-voltage Depletion MOSFET (UF601Q) Discrete Planar MOSFET (~1500V) Component Super-junction MOSFET (500~950V) Lighting / Dimming SCR (~1000V) Power Control TRIAC (~900V) (Bulb, tube, ballast, nd MOSFET (DFN5060 DFN3030) dimmer, power control) 2 -side Discrete Component Schottky/MGBR/TGBR low-V 4 F Product PN. (for Power Module) A Bridge Rectifier 1~2A for low power application B High-volt. Diode / FRED 600V+, mostly <5A, general/fast/superfast C PWM controller IC PSR: save usage of supporting IC (Flyback topology: up to 60W) MOSFET integrated: save usage of HV MOSFET D Depletion MOSFET Optional: only for low-consumption circuit PFC: 500~600V Current High-volt. MOSFET 110VAC: 600~700V determined by E (Planar / Super-junction) 220VAC: 800~1000V Output-power F Schottky rectifier / MGBR / TGBR Voltage determined by Current Output-voltage determined by G Synchronous Rectifier MOSFET 40V for 5VOUT, 100V for 12VOUT Output-current H Supporting IC TL431 + photo-coupler (UPC816/817) (not in PSR topology) or UM60x (VREF + 2*Op Amp) for both CV / CC Thyristor (power-control) BT169 (SCR), UZ0103 (TRIAC) TVS (snubber/surge) P6KE, SMDJ Transformer Sync. PWM PFC Rectifier / Controller Schottky VAC C E F / G Isolated Universal: B D Feedback H 5 90VAC~265VAC Primary side Secondary side Mainboard Parts ∗ Switching DC Regulator ∗ Low-dropout ∗ Darlington Array ∗ Hall Sensor Regulator ∗ 74- Shift Register ∗ Motor Driver 00.386 023.95 230.2 1.680 ∗ 50.12 0.997 Reset IC Date: 5. 26. 2017 Time: 37 Hr 22 Min LED Indicator / Display DC Power Core H System Manag. Logic Motor / Fan Sensor / Control AC-DC Power Communication Module Logic control Mux / Switch ∗ 74-logic gates ∗ USB Power Switch ∗ Amplifier ∗ 74-bus switch ∗ RS-232 / RS-485 ∗ Comparator ∗ Mux / demux 6 ESD protection 7 Package Portfolio DO-201AD TO-3P TO-220 TO-220F/F1/F2/F3 TO-126B/C DO-15 TO-247 Series (non-iso) TO-220F-4 TO-126/S DO-41 Axial Power MOSFET / BJT / Regulator Audio Amplifier Transistor TO-230 Glass-passivated Diode HZIP-x To-92 (FL) SIP-8 TO-262 (I2PAK) TO-251 (IPAK) Series THD DIP-8 MOSFET / Regulator Application IC Bridge DFM Rectifier TO-263 (D2PAK) TO-252 (DPAK) ABS SMC SMD MBS SMB MBF SMA Power IC / Analog IC / Logic IC Low-VF Diode Transistor / Logic IC Diode HSOP-8 SOP-8 DFN5060 TO-277 DFN3030 SOT-23 SOT-25 SOD-123(S) LDO / Transistor (H)TSSOP-x ... SOT-323 SOT-353 SOD-323 (H)MSOP-x DFN1010 SOT-223 SOT-523 SOT-26 SOD-523 SSOP-x DFN1006 SOT-89 SOT-723 SOT-363 SOD-723 pitch 1.27 pitch 0.65 pitch 0.50 DFN1010 LDO MOSFET Comparator U74AUP1Gxx LR91xx DFN3030 DFN2030 Amplifier U74LVCxxxx DFN5060 U74LVCxxx p 0.35 Power MOSFET DFN3020 Rectifier Diode DFN2020 DFN1410 DFN1006 8 5.0 3.0 2.0 1.6 1.0 mm Discrete Component Transistor Diode MOSFET FRED (~1200V, ~160A) Trench MOSFET (~200V) Schottky diode (~200V, ~40A) Planar MOSFET (~1500V) MGBR/TGBR (Low-VF, ~300V, ~60A) Super-junction MOSFET TVS diode / array (500~950V, 0.2~75A) Thyristor IGBT (600V/1200V) SCR (200~1000V, ~20A) JFET TRIAC (400~900V, ~40A) Bipolar junction transistor Darlington transistor Digital transistor 9 UTC Power MOSFET Max. RDS(ON) <6.5Ω Application 1Ω Planar MOSFET Super-junction 4N150 (50V~1500V) MOSFET <2.5Ω Low-voltage Trench MOSFET (500V~950V) 6N120 -Mainboard application 100mΩ <0.5Ω Power / SMPS / 13NM90 100~400V Planar MOSFET 50 mΩ Trench MOSFET Lighting <70mΩ -Motor / Industrial application 75NM70 (10V~200V) <55mΩ <55mΩ High-voltage Super-junction / 10mΩ 60NM50 75NM60 <40mΩ Super-junction Planar MOSFET Mainboard UF50N20 Planar 2 mΩ <14mΩ Trench -AC-DC power / lighting <2.4mΩ UTT220N03 UTT80N10H -Up to 1500V 20V 60V 100V 200V 600V 900V 1500V -Low RDS(ON) <55mΩ (75A) at 600V Source Gate Source Source Gate Source Source Gate Source n+ n+ n+ n+ p+ p+ p+ p+ Drain Drain Drain Super-junction MOSFET Trench MOSFET Planar MOSFET 10 (Low Repi ) (Low Rch ) (up to 1500V, high EAS) UTC Planar MOSFET Max. RDS(ON) <6.5Ω Planar Power MOSFET 1Ω Planar MOSFET Super-junction 4N150 VDSS: up to 1500 V ID: up to 110 A Type (50V~1500V) MOSFET <2.5Ω Part No. VDSS ID (=X) (500V~950V) 6N120 UF5305 P-ch -55V -31A 100mΩ <0.5Ω UF5210 P-ch -100V -40A Power / SMPS / 13NM90 50 mΩ Trench MOSFET Lighting <70mΩ UF9640 P-ch -200V -11A 75NM70 (10V~200V) <55mΩ <55mΩ 7P30 P-ch -300V -6A 10mΩ 60NM50 75NM60 4P50 P-ch -500V -4A <40mΩ Super-junction Mainboard UF50N20 Planar UF3205 N-ch 55V 110A 2 mΩ <14mΩ Trench <2.4mΩ UTT220N03 UTT80N10H UF8010 N-ch 100V 80A 20V 60V 100V 200V 600V 900V 1500V UF50N20 N-ch 200V 50A 12N30 N-ch 300V 12A XN40 N-ch 400V up to 25A Planar MOSFET name rule: XN50 N-ch 500V up to 26A Current + N/P + Voltage XN60 N-ch 600V up to 22A e.g. 2N60: 600V, 2A (package/RDS(ON) related) XN70 N-ch 700V up to 25A Efficiency: XN80 N-ch 800V up to 12A XN90 N-ch 900V up to 12A RDS(ON): smaller->better (higher cost) XN100 N-ch 1000V up to 9A Switching speed: EMI related XN120 N-ch 1200V up to 6A XN150 N-ch 1500V up to 4A 11 Super-junction MOSFET Super-junction MOSFET Planar Super-junction Cross- Cross- MOSFET section OFF MOSFET section OFF state state n+ n+ n+ n+ p+ E Rch E Rch B B ON state V Repi V DSS DSS UTC p+ p+ Repi Thinner epi n- 2.5 Super-Junction BVDSS Heavy doping available Cross-section Defect-free n+ n+ Reliable & robust with Low Risk of multi-layer process avalanche failure … Part No. VDSS ID (=X) RDS(ON), MAX Comparison 7N65 7NM65 XNM50 500V 0.4A~60A 55mΩ Low R XNM60 600V 0.2A~75A 55mΩ RDS (ON) max. 1.2 Ω 0.9 Ω DS(ON) XNM65 650V 0.2A~60A 65mΩ Gate Charge 29 nC 21 nC Fast Switching XNM70 700V 0.2A~75A 70mΩ XNM80 800V 2A~13A 0.35Ω Die size 100% 35% Small Package XNM90 900V 2A~13A 0.50Ω12 XNM95 950V 6A~9A 1.20Ω Low-voltage MOSFET Max. RDS(ON) <6.5Ω 1Ω Planar MOSFET Super-junction 4N150 Channel resistance reduction (50V~1500V) MOSFET <2.5Ω Planar MOSFET (500V~950V) 6N120 100mΩ <0.5Ω Power / SMPS / 13NM90 50 mΩ Lighting Trench MOSFET <70mΩ Trench MOSFET 75NM70 (10V~200V) <55mΩ <55mΩ G G 10mΩ 60NM50 75NM60 Gate-charge Super-junction S S <40mΩ minimized Mainboard UF50N20 Planar 2 mΩ <14mΩ Trench Split-gate Trench <2.4mΩ UTT220N03 UTT80N10H 20V 60V 100V 200V 600V 900V 1500V RDS(ON) Part VDSS ID Trench MOSFET structure: (mΩ) Package Reduce conduction resistance Number (V) (A) TYP. MAX. or die size UPD02R095L -20 -40 7.6 9.5 DFN5x6 Various SMD package combo UTT50P06 -60 -50 12 15 TO-252 MOSFET available UTT25P10 -100 -25 - 150 TO-252 UTT130N06M 60 80 - 5.9 DFN5x6 Power / signal switching UTT60N10M 100 60 15 16 DFN5x6 application UFB4321H 150 83 - 13.8 TO-263 13 Signal switching MOSFET VDSS VGS(th) (V) VDSS VGS(th) (V) VDSS VGS(th) (V) PN PN (V) MIN. MAX. (V) MIN. MAX. (V) MIN. MAX. UT6302 -20 -0.7 -1.5 BSS84Z -50 -0.8 -2.0 UM6K31N 60 1.0 2.5 UT3P01Z -30 -0.4 -1.4 UK2158 50 0.5 1.1 UMBF170 60 1.0 - UK3018 30 0.8 1.5 BSS139Z 50 0.5 1.5 2N7002 60 1.0 2.5 UT3N01Z 30 0.4 1.3 UK1398 50 1.0 3.0 2N7002K 60 1.0 2.5 Low VGS(TH) MOSFET Maxim um RDS(ON) (mΩ) at VGS = VGS(th) (V) PN VDSS ID 4.5V 2.5V 1.8V (V) (A) MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. UT2340 -20 -2.0 -0.40 -1.50 52 70 78 110 - 210 UT3413 -20 -3.0 -0.30 -1.00 81 97 108 130 146 190 UT2302 20 2.4 0.45 - - 50 75 95 - - UT2308 20 2.7 0.40 1.00 - 80 - 110 - - UT3414 20 4.2 0.40 1.00 41 50 52 63 67 87 UT3416 20 6.5 0.40 1.00 18 22 21 26 26 34 DFN package options Combo solutions available Config.
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