Semiconductor Heterostructures and Their Application

Copy Link

Zhores Alferov

The History of Semiconductor
Heterostructures Reserch: from Early Double Heterostructure
Concept to Modern Quantum Dot
Structures

St Petersburg Academic University —
Nanotechnology Research and Education Centre RAS

• Introduction • Transistor discovery • Discovery of laser-maser principle and birth of optoelectronics

• Heterostructure early proposals • Double heterostructure concept: classical, quantum well and superlattice heterostructure. “God-made” and “Man-made” crystals

• Heterostructure electronics • Quantum dot heterostructures and development of quantum dot lasers

• Future trends in heterostructure technology • Summary

The Nobel Prize in Physics 1956

"for their researches on semiconductors and their discovery of the transistor effect"

William Bradford
Walter Houser
John

Shockley

1910–1989

Brattain

1902–1987

Bardeen

1908–1991

W. Shockley and A. Ioffe. Prague. 1960.

The Nobel Prize in Physics 1964

"for fundamental work in the field of quantum electronics, which has led to the construction of oscillators and amplifiers based on the maser-laser principle"

Charles Hard
Aleksandr
Nicolay

Townes
Prokhorov
Basov

1922–2001

b. 1915
1916–2002

Proposals of semiconductor injection lasers

• N. Basov, O. Krochin and Yu. Popov

(Lebedev Institute, USSR Academy of Sciences, Moscow) JETP, 40, 1879 (1961)

• M.G.A. Bernard and G. Duraffourg

(Centre National d’Etudes des Telecommunications, Issy-les-Moulineaux, Seine) Physica Status Solidi, 1, 699 (1961)

Lasers and LEDs on p–n junctions

• January 1962: observations of superlumenscences in GaAs p-n junctions
(Ioffe Institute, USSR).

• Sept.-Dec. 1962: laser action in GaAs and GaAsP p-n junctions
(General Electric , IBM (USA); Lebedev Institute (USSR).

Wavelength

“+”

E_Fⁿ
L_Dⁿ
L_D^p

GaAs

E_F^p

Cleaved mirror

“–”

Eⁿ– E^p> E_g

Condition of optical gain:

The Nobel Prize in Physics 2000

"for basic work on information and communication technology"

“for developing semiconductor heterostructures used in high-speed- and opto-electronics”
“for his part in the invention of the integrated circuit”

Zhores I.
Herbert
Jack S.

Alferov
Kilby

1923–2005

Kroemer

b. 1930 b. 1928

circuit

Fundamental physical phenomena in classical heterostructures

Electrons

(a) (b) (c)

One-side Injection

Propozal — 1948 (W. Shokley) Experiment — 1965 (Zh. Alferov et al.)

∆E

Holes

∆E

Superinjection

Theory — 1966 (Zh. Alferov et al.)

Experiment — 1968 (Zh. Alferov et al.)

Electrons

F
E

Holes

Diffusion in built-in quasielectric field

Electrons

Theory — 1956 (H. Kroemer) Experiment — 1967 (Zh. Alferov et al.)

Fundamental physical phenomena in classical heterostructures

(d)

Electron and optical confinement

Propozal — 1963 (Zh. Alferov, R. Kazarinov)
(H. Kroemer)

F E

Experiment — 1968 (Zh. Alferov et al.)

(e)

Superlattices

Theory — 1962 (L.V. Keldysh) Experiment —1970 (L. Esaki et al.)

E E

Stimulated emission:

Theory — 1971 (R. Kazarinov and R. Suris)

Experiment —1994 (F. Capasso et al.)

Heterojunctions—a new kind of semiconductor materials:

Long journey from infinite interface recombination to ideal heterojunction

Lattice matched heterojunctions

2.8
AlP

• Ge–GaAs–1959

(R. L. Anderson)

GaP
2.0

1.2 0.4
AlSb

• AlGaAs–1967

(Zh. Alferov et al., J. M. Woodall & H. S. Rupprecht)

InP
GaAs

GaSb

InAs
Ge

• Quaternary HS
(InGaAsP & AlGaAsSb)

Proposal–1970

5.40 5.56 5.72 5.88 6.04 6.20
Lattice constant ( ) [300 K]

(Zh. Alferov et al.)

First experiment–1972

(Antipas et al.)

Radiation spectrum for the first low threshold
Al_xGa_1–xAs DHS laser at room temperature

(a)

(3)
1.59 eV

1.39 eV

300 K J_th= 4300 A/cm²

×100

(b)

1.59 eV
1.61 eV
(2)
(2)
1.61 eV

(1)
(1)

7760
Wavelength (

7820
7100 7700 8300 8900

Wavelength (
Å)
Å)

Recommended publications

Print Version

Strategic Partners and Leaders of World Innovation Peter the Great St. Petersburg Polytechnic University and Tsinghua University Presentation of the Rector of Peter the Great St. Petersburg Polytechnic University, Academician of the RAS A.I. Rudskoi within the frame of the Tsinghua Global Vision Lectures at Tsinghua University (China); April 15, 2019 Dear Chairman of the University Council Professor Chen Xu, distinguished First Secretary of the Embassy of the Russian Federation, representative of the Ministry of Education and Science of the Russian Federation in the People's Republic of China Igor Pozdnyakov, distinguished academicians of the Chinese Academy of Sciences and professors of Tsinghua University, dear students and graduates, dear colleagues! It is a great honor for me to be here today in this Hall of Tsinghua University, a strategic partner of Peter the Great St. Petersburg Polytechnic University, as a speaker of the Tsinghua Global Vision Lectures, earlier attended by rectors of global world universities, leading experts and prominent political figures. Tsinghua University is the leader of China's global education. You hold with confidence the first place in the national ranking and are among the top-rank universities in the world. Peter the Great St. Petersburg Polytechnic University is one of the top 10 Russian universities and the largest technical one, the leader in engineering education in the Russian Federation. Our universities, as leaders of global education, are facing the essential challenge of ensuring the sustainable development of society, creating and introducing innovations. This year, Peter the Great St. Petersburg Polytechnic University ranked 85th and got in the top-100 world universities in the Times Higher Education (THE) University Impact Rankings.
Underpinning of Soviet Industrial Paradigms

Science and Social Policy: Underpinning of Soviet Industrial Paradigms by Chokan Laumulin Supervised by Professor Peter Nolan Centre of Development Studies Department of Politics and International Studies Darwin College This dissertation is submitted for the degree of Doctor of Philosophy May 2019 Preface This dissertation is the result of my own work and includes nothing which is the outcome of work done in collaboration except as declared in the Preface and specified in the text. It is not substantially the same as any that I have submitted, or, is being concurrently submitted for a degree or diploma or other qualification at the University of Cambridge or any other University or similar institution except as declared in the Preface and specified in the text. I further state that no substantial part of my dissertation has already been submitted, or, is being concurrently submitted for any such degree, diploma or other qualification at the University of Cambridge or any other University or similar institution except as declared in the Preface and specified in the text It does not exceed the prescribed word limit for the relevant Degree Committee. 2 Chokan Laumulin, Darwin College, Centre of Development Studies A PhD thesis Science and Social Policy: Underpinning of Soviet Industrial Development Paradigms Supervised by Professor Peter Nolan. Abstract. Soviet policy-makers, in order to aid and abet industrialisation, seem to have chosen science as an agent for development. Soviet science, mainly through the Academy of Sciences of the USSR, was driving the Soviet industrial development and a key element of the preparation of human capital through social programmes and politechnisation of the society.
Russian Physics 4/19/2016 History of Science in Russia

Physics and Physicists in Russia Vladimir Shiltsev, Fermilab APS April Meeting - 2016 April 19, 2016 Content: • The Beginning : 1724 -1917 • Great Soviet Science • After Perestroika : – Disaster – Diaspora • Current Situation : – Facts and numbers – Institutes, Journals, Int’l Cooperation – Reforms • Outlook 2 Vladimir Shiltsev | Russian Physics 4/19/2016 3 History of Science History of Science in Russia 1700Physics | RussianShiltsev Vladimir 1750 1800 1850 1900 19504/19/2016 2000 Saint-Petersburg Academy fully state-sponsored (poll-taxes from 4 cities) Peter I 1724 First cohort from abroad - Bernoulli, Euler, Delisle, … Lomonosov was the 1st Russian academician (1745) • Imperial Academy of Sciences 1747 • Russian Academy of Sciences 1917 • USSR Academy of Sciences 1925 4 • VladimirRussian Shiltsev | Russian Academy Physics of Sciences 1991 4/19/2016 Mikhail Lomonosov (1711-1765) “Father of Russian Science” • Molecular theory of heat & colors • Proved the law of conservation of matter in chemical reactions • Discovered Venus’s atmosphere • Built first helicopter • Concept of atmospheric electricity • Geodynamics and metal origins • Proved organic origin of soil & oil • Founded first University (Moscow) • Formed Russian literary language • Outstanding historian • The best poet and courtier 5 Vladimir Shiltsev | Russian Physics more - Physics4/19/2016 Today, Feb.2011 Dmitry Mendeleev (1834-1907) • Periodic law (1869) • Finalized equation for ideal gas (1874) beyond Clapeyron’s 6Vladimir Shiltsev | Russian Physics (1834) 4/19/2016 20th Century:
City of Light: the Story of Fiber Optics

City of Light: The Story of Fiber Optics JEFF HECHT OXFORD UNIVERSITY PRESS City of Light THE SLOAN TECHNOLOGY SERIES Dark Sun: The Making of the Hydrogen Bomb Richard Rhodes Dream Reaper: The Story of an Old-Fashioned Inventor in the High-Stakes World of Modern Agriculture Craig Canine Turbulent Skies: The History of Commercial Aviation Thomas A. Heppenheimer Tube: The Invention of Television David E. Fisher and Marshall Jon Fisher The Invention that Changed the World: How a Small Group of Radar Pioneers Won the Second World War and Launched a Technological Revolution Robert Buderi Computer: A History of the Information Machine Martin Campbell-Kelly and William Aspray Naked to the Bone: Medical Imaging in the Twentieth Century Bettyann Kevles A Commotion in the Blood: A Century of Using the Immune System to Battle Cancer and Other Diseases Stephen S. Hall Beyond Engineering: How Society Shapes Technology Robert Pool The One Best Way: Frederick Winslow Taylor and the Enigma of Efﬁciency Robert Kanigel Crystal Fire: The Birth of the Information Age Michael Riordan and Lillian Hoddesen Insisting on the Impossible: The Life of Edwin Land, Inventor of Instant Photography Victor McElheny City of Light: The Story of Fiber Optics Jeff Hecht Visions of Technology: A Century of Provocative Readings edited by Richard Rhodes Last Big Cookie Gary Dorsey (forthcoming) City of Light The Story of Fiber Optics JEFF HECHT 1 3 Oxford New York Auckland Bangkok Buenos Aires Cape Town Chennai Dar es Salaam Delhi Hong Kong Istanbul Karachi Kolkata Kuala Lumpur Madrid Melbourne Mexico City Mumbai Nairobi Sa˜o Paulo Shanghai Taipei Tokyo Toronto Copyright ᭧ 1999 by Jeff Hecht Published by Oxford University Press, Inc.
Semiconductor Science and Leds

Optoelectronics EE/OPE 451, OPT 444 Fall 2009 Section 1: T/Th 9:30- 10:55 PM John D. Williams, Ph.D. Department of Electrical and Computer Engineering 406 Optics Building - UAHuntsville, Huntsville, AL 35899 Ph. (256) 824-2898 email: [email protected] Office Hours: Tues/Thurs 2-3PM JDW, ECE Fall 2009 SEMICONDUCTOR SCIENCE AND LIGHT EMITTING DIODES • 3.1 Semiconductor Concepts and Energy Bands – A. Energy Band Diagrams – B. Semiconductor Statistics – C. Extrinsic Semiconductors – D. Compensation Doping – E. Degenerate and Nondegenerate Semiconductors – F. Energy Band Diagrams in an Applied Field • 3.2 Direct and Indirect Bandgap Semiconductors: E-k Diagrams • 3.3 pn Junction Principles – A. Open Circuit – B. Forward Bias – C. Reverse Bias – D. Depletion Layer Capacitance – E. Recombination Lifetime • 3.4 The pn Junction Band Diagram – A. Open Circuit – B. Forward and Reverse Bias • 3.5 Light Emitting Diodes – A. Principles – B. Device Structures • 3.6 LED Materials • 3.7 Heterojunction High Intensity LEDs Prentice-Hall Inc. • 3.8 LED Characteristics © 2001 S.O. Kasap • 3.9 LEDs for Optical Fiber Communications ISBN: 0-201-61087-6 • Chapter 3 Homework Problems: 1-11 http://photonics.usask.ca/ Energy Band Diagrams • Quantization of the atom • Lone atoms act like infinite potential wells in which bound electrons oscillate within allowed states at particular well defined energies • The Schrödinger equation is used to define these allowed energy states 2 2m e E V (x) 0 x2 E = energy, V = potential energy • Solutions are in the form of
A Self-Consistent Static Model of the Double-Heterostructure Laser

IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. QE-17, NO. 9, SEPTEMBER 1981 1941 A Self-Consistent Static Model of the Double-Heterostructure Laser Abstract-A new static model of the double-heterostructure laser is even as an approximation, neglects twovery important effects: presentedwhich treats the p-njunction in the laser in a consistent first,the effect on the electricad characteristics oflateral manner.The .soiution makes use of thefinite-element method to treat complex diodegeometries. The model is valid above lasing thresh- carrier drift and diffusion and, second, the saturation of junc- old cdshows both the saturationin the diode junction voltageat tionvoltage (and carrier populations) associated with lasing thresholdas well as lateral mode shifts associated with spatial hole threshold. A more reasonable condition to apply to the diode burning.Several geometries have been analyzed and somespecific junction in the double-heterostructure laser is to assume the results are presented as illustration. continuity of the carrier quasi-Fermi levels across the hetero- junction interfaces. Thisassumption leads naturally to the I.INTRODUCTION saturationof the diode voltage at lasing threshold,and is OUBLE-HETEROSTRUCTURE injection lasershave consistent with semiconductor physics. However, the use of Drecently become objects of intense interest as compact, this model of the diode junction requires the use of a different highly efficient sources of coherent light. With this in mind, solution method from that ofprevious models. laser diode modeling is potentially a tool of great value, both Another model specifically designed to treat the behavior of to understand the effects seen in real laser diodes as well as to a narrow planar stripe laser treats the diode junction in this predict and possibly optimize the behavior of as yet unfabri- manner using a highly simplified geometry [7] .
1 Semiconductors, Alloys, Heterostructures

1 Semiconductors, alloys, heterostructures 1.1 Introducing semiconductors Single-crystal semiconductors have a particularly important place in optoelectronics, since they are the starting material for high-quality sources, receivers and amplifiers. Other materials, however, can be relevant to some device classes: polycrystalline or amorphous semiconductors can be exploited in light-emitting diodes (LEDs) and solar cells; dielectrics (also amorphous) are the basis for passive devices (e.g., waveguides and optical fibers); and piezoelectric (ferroelectric) crystals such as lithium niobate are the enabling material for a class of electrooptic (EO) modulators. Moreover, polymers have been recently exploited in the development of active and passive optoelectronic devices, such as emitters, detectors, and waveguides (e.g., fibers). Nevertheless, the peculiar role of single-crystal semiconductors justifies the greater attention paid here to this material class with respect to other optoelectronic materials. From the standpoint of electron properties, semiconductors are an intermediate step between insulators and conductors. The electronic structure of crystals generally includes a set of allowed energy bands, that electrons populate according to the rules of quantum mechanics. The two topmost energy bands are the valence and conduction band, respectively, see Fig. 1.1. At some energy above the conduction band, we find the vacuum level, i.e., the energy of an electron free to leave the crystal. In insulators,the valence band (which hosts the electrons participating to the chemical bonds) is separated from the conduction band by a large energy gap Eg, of the order of a few electronvolts (eV). Due to the large gap, an extremely small number of electrons have enough energy to be promoted to the conduction band, where they could take part into electrical con- duction.
Doping Concentration Effect on Performance of Single QW Double-Heterostructure Ingan/Algan Light Emitting Diode

EPJ Web of Conferences 162, 01037 (2017) DOI: 10.1051/epjconf/201716201037 InCAPE2017 Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode N. Syafira Abdul Halim1,*, M.Halim A. Wahid1, N. Azura M. Ahmad Hambali1, Shanise Rashid1, and Mukhzeer M.Shahimin2 1Semiconductor Photonics & Integrated Lightwave Systems (SPILS), School of Microelectronic Engineering, Universiti Malaysia Perlis, Pauh Putra Campus, 02600 Malaysia. 2Department of Electrical and Electronic Engineering, Faculty of Engineering, National Defence University of Malaysia (UPNM), Kem Sungai Besi, 57000 Kuala Lumpur. Abstract. Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15µm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V. 1 Introduction dislocation density. In this context, the improvement of increasing doping concentration in gallium nitride (GaN) Wide band gap gallium nitride (GaN) based LED structure has a great importance for better semiconductor device has become a great potential of performances in GaN LED structure.
Introduction

1 INTRODUCTION M.Shifman William I. Fine Theoretical Physics Institute University of Minnesota, Minneapolis, MN 55455 USA [email protected] When destination becomes destiny... — 1 — Five decades — from the 1920s till 1970s — were the golden age of physics. Never before have developments in physics played such an important role in the history of civilization, and they probably never will again. This was an exhilarating time for physicists. The same five decades also witnessed terrible atrocities, cruelty and degradation of humanity on an unprecedented scale. The rise of dictatorships (e.g., in Europe, the German national socialism and the communist Soviet Union) brought misery to millions. El sueño de la razón produce monstruos... In 2012, when I was working on the book Under the Spell of Lan- dau, [1] I thought this would be my last book on the history of the- oretical physics and the fate of physicists under totalitarian regimes (in the USSR in an extreme form as mass terror in the 1930s and 40s, and in a milder but still onerous and humiliating form in the Brezhnev era). I thought that modern Russia was finally rid of its dictatorial past and on the way to civility. Unfortunately, my hopes remain fragile: recent events in this part of the world show that the past holds its grip. We are currently witnessing recurrent (and even dangerously growing) symptoms of authoritarian rule: with politi- cal opponents of the supreme leader forced in exile or intimidated, with virtually no deterrence from legislators or independent media, the nation’s future depends on decisions made singlehandedly.
Light Emitting Diode

Module 6 : Light Emitting Diode Lecture : Light Emitting Diode part - I Objectives In this lecture you will learn the following Introduction to Light Emitting Diode (LED) Principle of LED - p-n Homojunction Double Heterojunctions LED Materials - Direct and Indirect Band Gaps LED Circuit 1.1Introduction A light emitting diode (LED) is a device which converts electrical energy to light energy. LEDs are preferred light sources for short distance (local area) optical fiber network because they: are inexpensive, robust and have long life (the long life of an LED is primarily due to its being a cold device, i.e. its operating temperature being much lower than that of, say, an incandescent lamp), can be modulated (i.e. switched on and off) at high speeds (this property of an LED is also due to its being a cold device as it does not have to overcome thermal inertia), couple enough output power over a small area to couple to fibers (though the output spectrum is wider than other sources such as laser diodes). The circuit symbol of an LED is shown alongside. There are two leads, a short one, cathode, labelled or k and a long one, anode, labelled a or +. 1.2 Principle of LED - p-n Homojunction An LED is essentially a p-n junction diode. It may be recalled that a p- type semiconductor is made by doping an intrinsic semiconductor with acceptor impurities while an n- type is made by doping with donor impurities. Ionization of carriers from the localized levels near the bottom of the conduction band provides electron carriers in the conduction band.
Fiber Types in Gigabit Optical Communications

White Paper Fiber Types in Gigabit Optical Communications Abstract Fiber optic cables are the medium of choice in telecommunications infrastructure, enabling the transmission of high-speed voice, video, and data traffic in enterprise and service provider networks. Depending on the type of application and the reach to be achieved, various types of fiber may be considered and deployed. This paper describes the main characteristics of optical fiber in general, and the properties of multimode and single-mode fiber (MMF and SMF) in particular. Brief History of Optical Communications Table 1. The Optical Era Date Milestone May 16, 1960 Theodore Maiman demonstrates first laser at Hughes Research Laboratories in Malibu December 1960 Ali Javan makes first helium-neon laser at Bell Labs, the first laser to emit a steady beam 1962–63 Alec Reeves at Standard Telecommunications Laboratories in Harlow, United Kingdom, commissions a group to study optical waveguide communications under Antoni E. Karbowiak. One system they study is optical fiber. Autumn 1962 Four groups nearly simultaneously make first semiconductor diode lasers, but they operate only pulsed at liquid-nitrogen temperature. Robert N. Hall’s group at General Electric is first 1963 Karbowiak proposes flexible thin-film waveguide December 1964 Charles K. Kao takes over STL optical communication program when Karbowiak leaves to become chair of electrical engineering at the University of New South Wales. Kao and George Hockham soon abandon Karbowiak’s thin-film waveguide in favor of single-mode optical fiber January 1966 Kao tells Institution of Electrical Engineers in London that fiber loss could be reduced below 20 decibels per kilometer for inter-office communications April 1970 STL demonstrates fiber optic transmission at Physics Exhibition in London Spring 1970 First continuous-wave room-temperature semiconductor lasers made in early May by Zhores Alferov’s group at the Ioffe Physical Institute in Leningrad (now St.
Annual Report 2017

67th Lindau Nobel Laureate Meeting 6th Lindau Meeting on Economic Sciences Annual Report 2017 The Lindau Nobel Laureate Meetings Contents »67 th Lindau Nobel Laureate Meeting (Chemistry) »6th Lindau Meeting on Economic Sciences Over the last 67 years, more than 450 Nobel Laureates have come 67th Lindau Nobel Laureate Meeting (Chemistry) Science as an Insurance Policy Against the Risks of Climate Change 10 The Interdependence of Research and Policymaking 82 to Lindau to meet the next generation of leading scientists. 25–30 June 2017 Keynote by Nobel Laureate Steven Chu Keynote by ECB President Mario Draghi The laureates shape the scientific programme with their topical #LiNo17 preferences. In various session types, they teach and discuss Opening Ceremony 14 Opening Ceremony 86 scientific and societal issues and provide invaluable feedback Scientific Chairpersons to the participating young scientists. – Astrid Gräslund, Professor of Biophysics, Department of New Friends Across Borders 16 An Inspiring Hothouse of Intergenerational 88 Biochemistry and Biophysics, Stockholm University, Sweden By Scientific Chairpersons Astrid Gräslund and Wolfgang Lubitz and Cross-Cultural Exchange Outstanding scientists and economists up to the age of 35 are – Wolfgang Lubitz, Director, Max Planck Institute By Scientific Chairpersons Torsten Persson and Klaus Schmidt invited to take part in the Lindau Meetings. The participants for Chemical Energy Conversion, Germany Nobel Laureates 18 include undergraduates, PhD students as well as post-doctoral Laureates 90 researchers. In order to participate in a meeting, they have to Nominating Institutions 22 pass a multi-step application and selection process. 6th Lindau Meeting on Economic Sciences Nominating Institutions 93 22–26 August 2017 Young Scientists 23 #LiNoEcon Young Economists 103 Scientific Chairpersons SCIENTIFIC PROGRAMME – Martin F.