Table of Contents Miniskiip® Generation II

Technical Explanation Revision: 4.5 ® MiniSKiiP Issue date: 2018-08-22 Prepared by: Thomas Hürtgen Generation II Approved by: Stefan Hopfe

Keyword: MiniSKiiP, spring, topology, 600V, 1200V, 1700V, board, pressure lid, order code Table of Contents

1. Introduction ...... 3 1.1 Key Features ...... 3 1.2 Advantages ...... 3 2. Topologies ...... 4 3. Selection Guide ...... 6 3.1 600V Fast Switching Modules ...... 6 3.2 600V Modules with Trench IGBT ...... 7 3.3 1200V Modules with Trench 4 IGBT ...... 8 3.4 1700V Modules with Trench IGBT ...... 9 3.5 3-Level Modules ...... 9 3.6 Half Bridge Modules ...... 10 3.7 Twin 6-pack Modules ...... 10 4. MiniSKiiP ® Qualification ...... 11 5. Storage & Shelf Life Conditions ...... 12 6. MiniSKiiP ® Contact System ...... 12 6.1 PCB Specification for the MiniSKiiP ® Contact System...... 12 6.1.1 Conductive Layer Thickness Requirements ...... 12 6.1.2 NiAu as PCB Surface Finish ...... 12 6.1.3 PCB Design ...... 12 6.1.4 PCB Soldering Process and Landing Pads ...... 14 6.2 Spring Contact Specification ...... 14 6.3 Contact Resistance ...... 15 6.4 Electromigration and Whisker Formation ...... 16 6.5 Qualification of Contact System ...... 17 7. Safe Operating Areas for IGBTs ...... 18 7.1 Safe Operating Area during Turn-on and Turn-off (SOA, RBSOA)...... 18 7.2 Safe Operating Area During Short Circuit (SCSOA) ...... 18

8. Definition and Measurement of R th and Z th ...... 19 8.1 Measuring Thermal Resistance R th(j-s) ...... 19 8.2 Transient Thermal Impedance (Z th ) ...... 20 9. Specification of the Integrated Temperature Sensor ...... 21 9.1 Electrical Characteristics (PTC) ...... 22 9.2 Electrical Characteristics (NTC) ...... 23 9.3 Electrical Isolation ...... 24 10. Creepage- and Clearance distances ...... 25 11. Thermal Material Data ...... 26 12. Silicon Nitride AMB Substrates ...... 27 13. Laser Marking ...... 28

14. RoHS Compliance ...... 28 15. Packing Specification ...... 29 15.1 Packing Box ...... 29 15.2 Marking of Packing Boxes ...... 30 16. Type Designation System ...... 31 17. Caption of the Figures in the Data Sheets ...... 31 17.1 Caption of Figures in the Data Sheets of “065”, “066” and “126” Modules...... 31 17.2 Caption of Figures in the Data Sheets of “12T4” and “176” Modules ...... 32 17.3 Calculation of max. DC-Current Value for “12T4” IGBTs ...... 33 17.4 Internal and External Gate Resistors ...... 33 18. Accessories ...... 34 18.1 Evaluation Boards ...... 34 18.1.1 Static Test Boards ...... 35 18.1.2 Dynamic Test Boards ...... 35 18.1.3 Order Codes for Evaluation Boards ...... 36 18.2 Pressure Lid...... 37 18.3 Pre-Applied Thermal Paste ...... 37 18.4 Mechanical Sample ...... 37 19. Ordering Codes ...... 38 20. Disclaimer ...... 39

1. Introduction

1.1 Key Features

• 600V/650V Trench and 600V ultrafast (NPT) IGBTs Figure 1: MiniSKiiP ® housing sizes • 1200V and 1700V Trench and Trench 4 IGBTs • SEMIKRON inverse and freewheeling diodes in CAL technology • SEMIKRON thyristors for controlled rectifiers • SEMIKRON rectifier diodes with high surge currents • Four different housing sizes • Current range 4A to 400A for power range up to 90 kW • Comprehensive setup of circuit topologies:

CIBs, 6-pack, twin 6-pack, H-bridge, half bridge, 3-level, uncontrolled/half controlled input bridges with brake chopper and custom specific modules for various applications • Solderless and rugged spring contact technology for all power and auxiliary connections

• Fast and easy mounting with one or two screw(s) • Full isolation and low thermal resistance due to DCB ceramic without base plate • Integrated PTC or NTC temperature sensor

1.2 Advantages Utilising the reliability of pressure contact technology the patented MiniSKiiP ® is a rugged, high-integrated system including converter, inverter, brake (CIB) topologies for standard drive applications up to 90 kW motor power. An integrated temperature sensor for monitoring the heat sink temperature enables an over temperature shut down. All components integrated in one package greatly reduce handling. The reduced number of parts increases the reliability.

® MiniSKiiP is using a well-approved Al 2O3 DCB ceramic for achieving an isolation voltage of AC 2.5 kV per 1 min and superior thermal conductivity to the heat sink.

Due to optimised current density, matched materials for high power cycling capability and pressure contact technology, MiniSKiiP ® is a highly reliable, compact and cost effective power module.

2. Topologies

The MiniSKiiP ® product platform offers wide range circuit topologies as catalogue and custom specific types in four package sizes. Converter-Inverter-Brake (CIB), 6-pack, twin 6-pack, H-bridge, half bridge, 3-Level, uncontrolled/half controlled input bridges with brake chopper and custom specific modules are available for various applications. Following figures demonstrate a selection of available circuit topologies.

Figure 2: Selected MiniSKiiP ® topologies

6-pack with open emitter (AC) CIB with open emitter (NAB)

6-pack with common emitter (AC) CIB with common emitter (NAB)

3-phase input bridge and 3-phase inverter (NAC) Single phase input bridge, brake chopper and 3- phase inverter (NEB)

Half controlled 3-phase input bridge with brake Uncontrolled 3-phase input bridge with brake chopper (AHB) chopper (ANB)

H-Bridge (GH) 3-Level (NPC)

3-Level (TNPC) Twin 6-pack (ACC)

Half Bridge (GB) 3-phase 3-level (TNPC)

3. Selection Guide

For drive applications, the following tables and diagrams can be used as a first indication. In any case, a verification of the selection with an accurate calculation is mandatory. For an easy calculation, SEMIKRON offers a calculation tool called “SEMISEL”. It is a flexible calculation tool based on MathCad. Parameters can be adapted to a broad range of applications. SEMISEL can be found on the SEMIKRON homepage under http://www.semikron.com/service-support/semisel-simulation.html

3.1 600V Fast Switching Modules The following table shows the correlation between standard motor power (shaft power) and standard MiniSKiiP ® under typical conditions. For the calculation parameters, please refer to Figure 3.

Table 1: Standard motor shaft powers and maximum switching frequencies

fsw(max) [kHz] < 8 8 - 12 > 12

P [kW] 1.5 2.2 3 4 5.5 7.5 11 15

SKiiP 11NAB065V1 25 4

SKiiP 12NAB065V1 20 4

SKiiP 13NAB065V1 25 12

SKiiP 14NAB065V1 17 4

SKiiP 26NAB065V1 20

SKiiP 37NAB065V1 15

SKiiP 39AC065V2 17 6

Figure 3: Mechanical power vs. switching frequency for 600V fast MiniSKiiP ® modules

3.2 600V Modules with Trench IGBT The following table shows the correlation between standard motor power (shaft power) and standard MiniSKiiP ® under typical conditions. For the calculation parameters, please refer to Figure 4.

Table 2: Standard motor shaft powers and maximum switching frequencies

fsw(max) [kHz] < 8 8 - 12 > 12

P [kW] 1.5 2.2 3 4 5.5 7.5 11 15

SKiiP 11NAB066V1 20 10

SKiiP 12NAB066V1 20 7

SKiiP 13NAB066V1 14

SKiiP 14NAB066V1 17 5.5

SKiiP 25NAB066V1 20 10

SKiiP 26NAB066V1 19 7

SKiiP 27AC066V1 17 5

SKiiP 28AC066V1 20 9

Figure 4: Mechanical power vs. switching frequency for 600V MiniSKiiP ® modules

3.3 1200V Modules with Trench 4 IGBT The following table shows for which standard motor power (shaft power) which standard MiniSKiiP ® works proper under typical conditions and switching frequencies. For the calculation parameters, please refer to Figure 5.

Table 3: Standard motor shaft powers and maximum switching frequencies

fsw(max) [kHz] < 8 8 - 12 > 12

P [kW] 2.2 3 4 5.5 7.5 11 15 18.5 22 30

SKiiP 11AC12T4V1 20 18 9

SKiiP 12AC12T4V1 20 17 9

SKiiP 13AC12T4V1 18 11 6

SKiiP 23AC12T4V1 4

SKiiP 24AC12T4V1 20 16 7

SKiiP 25AC12T4V1 17 9 4

SKiiP 26AC12T4V1 18 10 6

SKiiP 37AC12T4V1 14 8 5

SKiiP 38AC12T4V1 17 11 7 6

SKiiP 39AC12T4V1 13 10 8 4

Figure 5: Mechanical power vs. switching frequency for 1200V MiniSKiiP ® modules with Trench 4 IGBT

3.4 1700V Modules with Trench IGBT The following table shows the portfolio of 1700V MiniSKiiP ® power modules for applications up to 690V AC line voltage.

Table 4: MiniSKiiP® 1700V modules

Type designation VCES in V Ic,nom in A Topology Housing size SKiiP 28ANB18V3 1700 100 3-phase bridge rectifier MiniSKiiP 2 +brake chopper

SKiiP 38AC176V2 1700 100 6-pack MiniSKiiP 3

SKiiP 24NAB176V1 1700 58 CIB MiniSKiiP 2

SKiiP 34NAB176V3 1700 58 CIB MiniSKiiP 3

3.5 3-Level Modules The following table shows the portfolio of MiniSKiiP ® power modules for 3-Level applications. Blocking voltage values are referred to single switch value. The total blocking voltage in NPC module is 1300V since two IGBTs are always operating in series.

Table 5: MiniSKiiP ® 3-Level modules with NPC or TNPC topology

Type designation VCES in V Ic,nom in A Topology Housing size SKiiP 26MLI07E3V1 650 75 NPC, 1-phase MiniSKiiP 2

SKiiP 27MLI07E3V1 650 100 NPC, 1-phase MiniSKiiP 2

SKiiP 28MLI07E3V1 650 150 NPC, 1-phase MiniSKiiP 2

SKiiP 39MLI07E3V1 650 200 NPC, 1-phase MiniSKiiP 3

SKiiP 28TMLI12F4V1 1200/650 80 TNPC, 1-phase MiniSKiiP 2

SKiiP 29TMLI12F4V1 1200/650 150 TNPC, 1-phase MiniSKiiP 2

SKiiP 35TMLI12F4V2 * 1200/650 40 TNPC, 3-phase MiniSKiiP 3

SKiiP 39TMLI12T4V2 1200/650 200 TNPC, 1-phase MiniSKiiP 3

* : under development

3.6 Half Bridge Modules The following table shows the portfolio of MiniSKiiP ® half bridge power modules. For detailed info please refer to Technical Explanations for MiniSKiiP Dual product series.

Table 6: MiniSKiiP ® half bridge power modules

Type designation VCES in V Ic,nom in A Topology Housing size SKiiP 24GB07E3V1 650 150 Half bridge (GB) MiniSKiiP 2

SKiiP 26GB07E3V1 650 200 Half bridge (GB) MiniSKiiP 2

SKiiP 38GB07E3V1 650 300 Half bridge (GB) MiniSKiiP 3

SKiiP 24GB12T4V1 1200 150 Half bridge (GB) MiniSKiiP 2

SKiiP 26GB12T4V1 1200 200 Half bridge (GB) MiniSKiiP 2

SKiiP 38GB12E4V1 1200 300 Half bridge (GB) MiniSKiiP 3

SKiiP 39GB12E4V1 1200 400 Half bridge (GB) MiniSKiiP 3

SKiiP 22GB17E4V1 1700 100 Half bridge (GB) MiniSKiiP 2

SKiiP 24GB17E4V1 1700 150 Half bridge (GB) MiniSKiiP 2

SKiiP 36GB17E4V1 1700 200 Half bridge (GB) MiniSKiiP 3

SKiiP 38GB17E4V1 1700 300 Half bridge (GB) MiniSKiiP 3

3.7 Twin 6-pack Modules The following table indicates all 1200V MiniSKiiP ® twin 6-pack power modules.

Table 7: MiniSKiiP ® Twin power modules

Type designation Converter Converter Inverter Inverter Housing VCES in V Ic,nom in A VCES in V Ic,nom in A size SKiiP 12ACC12T4V10 1200 8 1200 15 MiniSKiiP 1

SKiiP 23ACC12T4V10 1200 15 1200 25 MiniSKiiP 2

SKiiP 24ACC12T4V10 1200 25 1200 35 MiniSKiiP 2

SKiiP 35ACC12T4V10 1200 50 1200 50 MiniSKiiP 3

4. MiniSKiiP ® Qualification

Standard tests for the product qualification and requalification.

The objectives of reliability tests are: 1. To ensure general product quality and reliability 2. To establish the limits of systems by exposing them to various test conditions 3. To ensure process stability and reproducibility of production processes 4. To evaluate the impact of product and process changes on reliability

The following standard tests are minimum requirements for the product release of power modules.

Table 8: Overview of SEMIKRON reliability tests, test conditions and relevant standards

Standard test conditions for:

Reliability Test MOS/IGBT Products Diode/Thyristor Products

High Temperature Reverse Bias 1,000 h, 1,000 h, DC, (HTRB) VDS /V CE = 95% of voltage class, VD/V R = 66% of voltage class, IEC 60747, DIN IEC 60749-23 125°C ≤ T c ≤ 145°C 105°C ≤ T c ≤ 120°C

High Temperature Gate Bias 1,000 h, ±VGS(max) /V GE(max) , not applicable (HTGB) Tj(max) IEC 60747, DIN IEC 60749-23

High Humidity High 504 h, 85°C, 85% RH, 1000 h, 85°C, 85% RH, Temperature High Voltage VDS /V CE = 80% of voltage class, VD/V R = max. 80V Reverse Bias (H3TRB) VGE = 0 V IEC 60068-2-67

High Temperature Storage (HTS) 1,000 h, T stg(max) 1,000 h, T stg(max) IEC 60068-2-2 Test B

Low Temperature Storage 1,000 h, T stg(min) 1,000 h, T stg(min) (LTS) IEC 60068-2-1

Thermal Shock (TS) 100 cycles, 100 cycles IEC 60068-2-14 Test Na Tstg(max) – Tstg(min) Tstg(max) – Tstg(min)

Power Cycling (PC) 20,000 load cycles, 10,000 load cycles, IEC 60749-34 ΔT j = 100 K ΔT j = 100 K

Vibration Sinusoidal sweep, 5 g, Sinusoidal sweep, 5g, IEC 60068-2-6 Test Fc 2 h per axis (x, y, z) 2 h per axis (x, y, z)

Mechanical Shock Half sine pulse, 30 g, Half sine pulse, 30g, IEC 60068-2-27 Test Ea 3 times each direction 3 times each direction (±x, ±y, ±z) (±x, ±y, ±z)

5. Storage & Shelf Life Conditions

MiniSKiiP power modules are qualified according to IEC 60721-4-1 and can be stored in original package for 2 years under climatic class 1K2 (IEC 60721-3-1):

Relative humidity: 5%...85% Storage temperature: 5°C…40°C

According to our experiences, following shelf life conditions (which are not tested) are possible and should not be exceeded:

Relative humidity: max. 85% Storage temperature: -25°C…+60°C Condensation: not allowed at any time Storage time: max. 2 years

After extreme humidity the reverse current limits may be exceeded but do not degrade the performance of the MiniSKiiP ®.

6. MiniSKiiP ® Contact System

6.1 PCB Specification for the MiniSKiiP ® Contact System The material combination between the MiniSKiiP ® spring surface and the corresponding contact pad surface of the PCB has an influence to the contact resistance for different currents. Tin Lead alloy (SnPb) is an approved interface for application with MiniSKiiP ® modules. A sufficient plating thickness has to be ensured according to PCB manufacturing process. In order to comply with RoHS rules, the use of following PCB finish materials are recommended:

• Nickel Gold flash (NiAu) • Hot Air Levelling Tin (HAL Sn) • Chemical Tin (Chem.l Sn)

It is not recommended to use boards with OSP (organic solderability preservatives) passivation. OSP is not suitable to guarantee a long term corrosion free contact. The OSP passivation is disappearing nearly 100% after a solder process or after 6 month storage.

6.1.1 Conductive Layer Thickness Requirements No special requirements on the thickness of the tin layer are necessary. All standard HAL and chemical tin boards (lead free process) are suitable. Due to PCB production process variations and several reflow processes it may be possible, that the tin layer has been consumed by the growth of inter metallic phases when mounting the MiniSKiiP ®. For the functionality of the MiniSKiiP ® spring contact system inside the specification limits a tin layer over the inter metallic phase is not necessary. The inter metallic phase is protecting the copper area on the PCB as well against oxidation as a long term effect.

6.1.2 NiAu as PCB Surface Finish The material combination NiAu and Ag plated spring has the best contact capabilities. To ensure the functionality of the Ni diffusion barrier, a thickness of at least 5µm nickel under plating is required.

6.1.3 PCB Design PCB Design is in responsibility of the customer. SEMIKRON’s recommendation is to comply with valid applicable regulations. In order to achieve the best performance layout the DC link should be a low inductance design. The –DC / +DC and –B/+B conductors should be as coplanar as possible with the maximum possible amount of copper area. The gate and the corresponding emitter tracks should be routed as well parallel and close together. If using the “standard (space) lid” a possibility is given for using SMD devices under the lid in certain areas. The maximum height of the applicable SMD devices is 3.5mm. Please make sure that the devices do not conflict either with the pressure points or with the mounting domes of the MiniSKiiP ® / MiniSKiiP ® lid. This will lead to an incorrect mounting increasing the thermal resistance which may lead to a thermal failure. As material for the printed circuit board, the FR 4 material can be applied. The thickness of copper layers should comply with IEC 326-3.

MiniSKiiP application PCB mounting holes:

• Module positioning pin hole diameter - current data sheet value = 3.1mm +0.1mm/-0.0mm - recommended values: housing size 0 = 3.1mm +0.1mm/-0.0mm housing size 1 = 3.1mm +0.1mm/-0.0mm housing size 2 = 3.1mm +0.1mm/-0.0mm housing size 3 = 3.5mm ±0.1mm

• Module mounting screw hole diameter - current data sheet value = 9.1mm +0.2mm/-0.0mm - recommended values: housing size 0 = 9.1mm +0.2mm/-0.0mm housing size 1 = 9.1mm +0.2mm/-0.0mm housing size 2 = 9.1mm +0.2mm/-0.0mm housing size 3 = 9.5mm ±0.1mm

Figure 6: PCB hole diameters for MiniSKiiP® assembly (Housing size 3)

MiniSKiiP

PCB

6.1.4 PCB Soldering Process and Landing Pads Components can be soldered on PCB using wave, reflow or selective soldering process. The landing pads for the spring contact must be free of any contamination like of solder stop, solder flux, dust, sweat, oil or other substances. If soldering components located on the PCB bottom side via wave soldering process, the contact pads have to be covered using metal stencil to protect the landing pads from solder splashes. Using an adhesive tape for masking the landing pads for protection requires paying particular attention that no residues remain on pads worsening the contact quality. Size and position of the particular landing pads are specified in the dedicated datasheet for each type. To ensure a reliable contact the landing pad size should be not undercut those measures. The landing pads must be free from plated-through holes (“VIAs”), to prevent any deterioration on a proper contact. In the remaining area, VIAs can be placed freely.

6.2 Spring Contact Specification Material: K88 Surface finishing: silver (Ag) with 1-5µm thickness; contact area (top and bottom) with 3-5µm thickness Surface protection: metallic passivation (50-55% Cu, 30-35% Sn, 13-17% Zn) thickness < 0.1μm

The base material K88 is a high-performance alloy for connector applications developed by Wieland Werke and Olin Brass. This alloy offers high yield strength (550 MPa), very good formability up to sharp bending, outstanding electrical conductivity (80% IACS) as well as remarkable relaxation resistance up to 200°C for a long term stable spring force over the specified temperature range. No spring fatigue expected over the complete MiniSKiiP ® lifetime. To protect the silver surface from deterioration it is covered with a metallic passivation film. This tarnish protection of the MiniSKiiP spring pins is for cosmetic reasons only and protects the silver surface from sulphuration and tarnishing for about half a year. Approximately half a year after production, depending on the thickness of the tarnish protection, the silver springs can begin to decolourize. It is possible that the springs of a single module show different states of discolouration.

Figure 7: Two examples for discoloured spring surfaces

The discolouration is caused by thin sulphide layers that develop on silver plated surfaces over time. The tarnish layers are ultrathin and brittle. These sulphide layers are easily broken during mounting; they do not impair the electrical contact. Therefore, MiniSKiiP modules with discoloured springs due to oxidation and sulphuration can be used for inverter production without any risk.

6.3 Contact Resistance The total ohmic resistance of the current path through the MiniSKiiP power module consists of several elements described in table and drawing below.

Note: The total ohmic resistance between the PCB terminals “1” and “2” is not the sum of values stated in the table. The trace resistances of PCB and DBC must be considered additionally.

Table 9: Elements of contact resistance

Resistance Value Explanation

RC11 0.75mΩ Contact resistance between spring and PCB landing pad

RS1 1.5mΩ Ohmic resistance of spring

RC12 0.75mΩ Contact resistance between spring and DBC landing pad

RC21 0.75mΩ Contact resistance between spring and DBC landing pad

RS2 1.5mΩ Ohmic resistance of spring

RC22 0.75mΩ Contact resistance between spring and PCB landing pad

Figure 8: Spring and contact resistances

1 2

PCB SnPb SnPb

Rc11 Rc21 Contact spring, R Contact spring, K88, Ag plated s1 K88, Ag plated Rs2

Rc12 Al Rc22 Cu Cu DBC Al2O3

To ensure a proper contact after mounting the measure for the spring looking out of the housing is set to min. 0.9mm (measured from the top surface to the head of the spring, Figure 9). For a proper functionality the spring contacts must not be contaminated by oil, sweat or other substances. Do not touch the spring surface with bare fingers. For this reason SEMIKRON recommends to wear gloves during all handling of the MiniSKiiP ® modules. Do not use any contact spray or other chemicals on the spring.

Figure 9: Spring excess length

min. 0.9mm

6.4 Electromigration and Whisker Formation To exclude the risk of electromigration SEMIKRON has performed a corrosive atmosphere test with a high concentration on H 2S. The test was successfully passed, please see test conditions below:

Table 10: Electromigration and whisker formation test parameters

Pre-conditioning 48 hours 25°C 75% Relative Humidity 80V Bias Voltage

Corrosive Atmosphere test following 240 hours the pre-conditioning 25°C 75% Relative Humidity 10ppm H 2S 80V Bias Voltage

Failure criteria Leakage current > 10µA

Whiskers are electrically conductive, crystalline structures growing out of a metal surface, generated by compressive stresses present in the metal structure and accelerated upon exposure to a corrosive atmosphere. After testing whisker growth has been observed on the edges of the MiniSKiiP ® springs in the area of less thick plating on the spring head and in the spring shafts. In no case whisker growth is influencing the creepage and clearance distances at MiniSKiiP ®. Spring shafts are non-conductive and made of plastic. Therefore, no issue can arise with the formation of whiskers in the spring shafts. Whisker growth on the spring head is not critical as well because the whisker is connecting spring pad and spring, which is anyway connected.

6.5 Qualification of Contact System

Table 11: Overview of MiniSKiiP contact system qualification tests for reliability

Pre-test Printed Circuit Board

Kind of Test Conditions Evaluation

1 Delivery condition - - Analysis of material compositions: Surface and cross section EDX/SEM

2 After Accelerated High Humidity, 85°C Analysis of material compositions: Aging Test High Temperature 85% RH Surface and cross section EDX/SEM Storage 1000h

3 After Accelerated High Temperature 150°C Analysis of material compositions: Aging Test Storage 1000h Surface and cross section EDX/SEM

Pressure Contact System Complete assembly: Mechanical Samples mounted with PCBs to a heat sink

Kind of Test Conditions Evaluation

4 High Temperature 125°C Measurement of electrical contact resistance before Storage 1000h and after the test

5 High Humidity, 85°C Measurement of electrical contact resistance before High Temperature 85% RH and after the test Storage 1000h

6 Temperature - 40…+125°C Continuous monitoring of contact resistance for: Cycling with 100 cycles Load current 6A Current Sense current 1mA

7 Industrial H2S 0.4ppm, Measurement of electrical contact resistance before Atmosphere SO2 0.4ppm, and after the test in dependence NO2 0.5ppm, upon Cl2 0.1ppm, IEC 60068-2-60 21Days

8 Vibration Sinusoidal sweep, Continuous monitoring of electrical contact 5 g, x, y, z – axis, 2 h/axis

9 Shock Half sine pulse, Continuous monitoring of electrical contact 30g, ±x, ±y, ±z – direction, 2h/axis

7. Safe Operating Areas for IGBTs

Safe operating areas are not included in the datasheets. They are given as standardized figures and referenced to V CES and I CRM or I Cnom . These figures apply to 600V, 1200V and 1700V.

7.1 Safe Operating Area during Turn-on and Turn-off (SOA, RBSOA) The following figure shows the maximum collector current (horizontal limit) and maximum collector-emitter voltage (vertical limit). It is important that the maximum ratings apply to currents which do not heat the IGBT to temperatures above the maximum chip temperature T j = 150°C or 175°C. IGBT modules may be operated as switches only and must not be used in linear mode. The maximum V CES value must never be exceeded. Due to the internal stray inductance of the module, an additional voltage will be induced during switching. The maximum voltage at the terminals V CEmax,T must therefore be smaller than VCEmax (see dotted line in Figure 10).

Figure 10: Safe Operating Area (SOA) / Reverse Biased Safe Operating Area (RBSOA)

7.2 Safe Operating Area During Short Circuit (SCSOA) Under certain conditions, the IGBT is essentially capable of turning off short circuits actively. In doing so, high power losses are generated by the IGBT working in the active operating area, causing a temporary increase in chip temperature to far beyond T j,max . However, the positive temperature coefficient of the collector-emitter voltage causes the circuit to stabilize and the short-circuit current is limited to 4..6 x I Cnom .

The following boundary conditions need to be fulfilled to ensure a safe operation: • The maximum short circuit duration is 6µs for 600V IGBT and 10μs for 1200V IGBT at V GE ≤ 15V • The number of short circuits may not exceed 1000 during the total operation time of the IGBT • The time between two short circuits has to be at least 1s • The maximum DC link voltage decreases to 360V for a 600V IGBT and 800V for a 1200V IGBT

The Figure 11 gives an example of the permissible SCSOA with a defined di/dt during turn-off. It must be taken into consideration that the voltage at the terminals is exceeded by the chip voltage to the amount of Ls*di/dt, meaning the maximum external voltage has to be reduced accordingly.

Figure 11: Short Circuit Safe Operating Area (SCSOA) - Example

8. Definition and Measurement of R th and Z th

8.1 Measuring Thermal Resistance R th(j-s) The thermal resistance is defined as given in the following equation:

− = ∆T = T1 T2 R ()−21th PV PV

The data sheet values for the thermal resistances are based on measured values. As can be seen in equation above, the temperature difference ΔT has a major influence on the R th value. As a result, the reference point and the measurement method have a major influence, too.

Figure 12: Measurement set up

Reference point T j (junction), silicon chip, hot spot

DBC substrate No copper baseplate!

Thermal grease 2 mm

Heatsink

Reference point T s (heat sink)

Since MiniSKiiP ® modules have no base plate, SEMIKRON gives the thermal resistance between the junction and the heat sink R th(j-s) . This value depends largely on the thermal paste. Thus, the value is given as a “typical” value in the data sheets. ® The R th(j-s) of the MiniSKiiP module is measured on the basis of the reference points given in Figure 12. The reference points are as follows:

• Tj - The junction temperature of the chip

• Ts – The heat sink temperature is measured in a drill hole, 2 mm beneath the module, directly under the chip. The 2 mm is derived from our experience, which has shown that at this distance from the DBC ceramic, parasitic effects resulting from heat sink parameters (size, thermal conductivity etc.) are at a minimum and the disturbance induced by the thermocouple itself is negligible.

For further information on the measurement of thermal resistances, please refer to: " M. Freyberg, U. Scheuermann, “Measuring Thermal Resistance of Power Modules “ ; PCIM Europe, May, 2003

The given R th values can be used for a standard thermal design. For a more detailed and more accurate thermal design it is important to create a dynamic thermal model of the heatsink taking in consideration the chip positions.

8.2 Transient Thermal Impedance (Z th )

When switching on a “cold” module, the thermal resistance R th appears smaller than the static value as given in the data sheets. This phenomenon occurs due to the internal thermal capacities of the package. These thermal capacities are “uncharged” and will be charged with the heating energy resulting from the losses during operation. In the course of this charging process the R th value seems to increase. During this time it is therefore called transient thermal impedance Z th . When all thermal capacities are charged and the heating energy has to be emitted to the ambience, the transient thermal resistance Z th will have reached the static data sheet value R th .

Figure 13: Z th - Transient thermal impedance with thermal paste Wacker P12

th(j-s) 0.1 /R

th(j-s) 0.01 Z

0.001

0.0001 0.00001 0.0001 0.001 0.01 0.1 1 t in s p

The transient thermal behaviour is measured during SEMIKRON’s module approval process. Based on this measurement a mathematical model is derived, resulting in the following equation

 t   t   t         τ   τ   τ  Z () t = R 1 − e 1 + R 1 − e 2 + R 1− e 3 th 1  2   3                    

® For MiniSKiiP modules, the coefficients R 1, τ1, and R 2, τ2 can be determined using the data sheet values as given in Table 12.

Table 12: Parameters for Z th(j-s) calculation using equation Parameter Unit IGBT, CAL diode

R1 [K/W] 0.11 x R th(j -s)

R2 [K/W] 0.77 x R th(j -s)

R3 [K/W] 0.12 x R th (j -s)

τ1 [sec] 1.0

τ2 [sec] 0.13

τ3 [sec] 0.002

9. Specification of the Integrated Temperature Sensor

Please note that MiniSKiiP ® power modules are equipped with a temperature sensor of NTC (=negative temperature coefficient) characteristic or of PTC (positive temperature coefficient) characteristic. Due to insulation and space reasons the temperature sensor is mostly placed near the edge of the DBC but close to an IGBT switch. The thermal coupling is not efficient enough to monitor the chip temperature of the switch. Therefore, the temperature sensor can be used as an indicator for the DBC and heat sink

temperature. For realising a trip level by an additional protection network the recommended value for the trip temperature is about 115 °C (air cooling), based on a heat sink with a standard thermal lateral spread. To get the detailed info about type of the temperature sensor in a specific module please refer to module data sheet.

Note: Thermal coupling diminished if water-cooling is used

9.1 Electrical Characteristics (PTC) The type “SKCS2 Temp 100” does have a characteristic like a resistance with positive temperature coefficient (PTC) – see Fig. 14 .

Note: Thermal coupling diminished if water-cooling is used

Figure 14: Temperature sensor ”SKCS2 Temp 100“:Resistance as a function of temperature

2500

2250

2000

1750

1500

1250

1000

750

500

Resistance in in ResistanceOhm 250

0 -50 -25 0 25 50 75 100 125 150 175

Temperature in °C

The temperature sensor has a nominal resistance of 1000 Ω at 25°C with a typical temperature coefficient of 0.76 % / K. Sensor resistance R(T) as a function of temperature:

R(T) = 1000 Ω * [1 + A * (T - 25 °C) + B * (T - 25 °C)² ] with A = 7.635 * 10 -3 °C -1 and B = 1.731 * 10 -5 °C -2

At 25°C the measuring tolerance is max. ± 3 %, at 100°C max. ± 2 %.

SEMIKRON recommends a measuring current range of 1 mA ≤ I m ≤ 3 mA.

For realising a trip level by an additional protection network the recommended value for the trip temperature is about 115 °C (air cooling), based on a heat sink with a standard thermal lateral spread.

9.2 Electrical Characteristics (NTC) Selected MiniSKiiP ® power modules are equipped with sensor type “KG3B-35-5” which has an NTC characteristic. The temperature sensor has a nominal resistance of 5000 Ω at 25°C (298.15 K). Following table and diagram show its detailed characteristics.

Figure 15: Typical sensor resistance of “KG3B-35-5” as a function of temperature

100

10 in kΩ in

typ. 1 R

0.1 0 10 20 30 40 50 60 70 80 90 -40 -30 -20 -10 100 110 120 130 140 150 Temperature in °C

Table 13: Typical sensor resistance values for selected temperatures Temperature Temperature R (typ.) in °C in °F in kΩ -40 -40 99.1 -30 -22 57.5 -20 -4 34.6 -10 14 21.5 0 32 13.7 10 50 9.00 20 68 6.05 25 77 5.00 30 86 4.16 40 104 2.91 50 122 2.08 60 140 1.52 70 158 1.12 80 176 0.840 90 194 0.640 100 212 0.493 110 230 0.385 120 248 0.304 130 266 0.243 140 284 0.196 150 302 0.160

9.3 Electrical Isolation Inside the MiniSKiiP® the temperature sensor is mounted close to the IGBT and diode dice on the same substrate. All MiniSKiiP modules provide functional isolation between temperature sensor and the remaining circuit, if not otherwise stated in the data sheet . The isolation is tested in production.

Figure 16: Temperature sensor on DBC substrate

mm ≥0.55

Figure 17: Sketch of high energy plasma caused by melted off bond wire

During short circuit failure and therewith electrical overstress, the bond wires can melt off producing an arc with high energy plasma. In this case, the direction of plasma expansion is not predictable; the temperature sensor might be touched by plasma and exposed to a high voltage level. The safety grade "Safe electrical Isolation" according to EN 50178 can be achieved by different additional means, described there in detail.

10. Creepage- and Clearance distances

The pressure lid of MiniSKiiP ® is designed as a hybrid construction with a metal inlay. The mounting screw is electrically connected with the metal inlay and the heat sink. Since the pressure lid has the same electrical potential as the heat sink creepage - and clearance distance considerations are required. Due to the design, only creepage distances are relevant. The distance between the metal inlay of the lid and the printed circuit board (Figure 18, 1.) are > 8.1 mm as given in Figure 19. The internal distance between screw and board (Figure 18, 2.) is > 8.5 mm, as given in Figure 20. Inside the MiniSKiiP ® a transparent silicone gel with a dielectric strength of 23 kV/mm ensures electrical isolation from the DBC substrate to the heat sink (Figure 18, 3.) as well as from the DBC to the screw (Figure 18, 4.).

Figure 18: MiniSKiiP ® assembly cross-section indicating distances

1. 2.

3. 4.

Figure 19: Cross-section sketch with distance from pressure plate to PCB

> 8.1 mm

Figure 20: Cross-section sketch with distance from screw to PCB

> 8.5 mm

11. Thermal Material Data

For thermal simulations it is necessary to have the thermal material properties e.g. layer thicknesses, specific thermal capacities and conductivity of the layers. The layer structure is shown in Figure 21 below and the material data in Table 14.

Figure 21: Sketch of MiniSKiiP ® assembly indicating material layers

Table 14: Material data for thermal simulations Spec. thermal Spec. Layer Density conductivity λ thermal capacity Layer Material thickness @25°C @25°C @25°C in µm in kg/m³ in W/(m*K) in J/(kg*K) IGBT chip “066” Si 70 148 700…750 2330 IGBT chip “126” Si 120 148 700…750 2330 IGBT chip “T4”, “F4” Si 115 148 700…750 2330 IGBT chip “E4” Si 120 148 700…750 2330 IGBT chip “17” Si 190 148 700…750 2330 600V diode chip “I3” Si 246 148 700…750 2330 600V diode chip “HD” Si 241 148 700…750 2330 650V diode chip Si 238 148 700…750 2330 1200V “I3”/”HD” Si 271 148 700…750 2330 1200V “I4F” Si 261 148 700…750 2330 1700V “I4F” Si 296 148 700…750 2330 1700V “I”/”HD” Si 304 148 700…750 2330 Chip solder layer SnAg ≈70 57 214 7800 DBC copper (top) Cu 300 394 385 8960

DBC ceramic Al 2O3 380 24 830 3780 DBC copper (bottom) Cu 300 394 385 8960 Customer Thermal paste - - - - specific Customer Heat sink - - - - specific

12. Silicon Nitride AMB Substrates

Si 3N4 substrates are offering a better thermal conductivity compared to standard Al 2O3 DCBs (Direct copper bonding) substrates. Si 3N4 is a ceramic substrate in AMB (=Active Metal Brazed) technology which is using a silver layer between the copper layer and the Si 3N4 ceramic.

Due to the fact that silver can migrate when humidity and DC voltage is applied the standard “High Humidity High Temperature High Voltage Reverse Bias” (H3TRB) qualification test would lead to an optical change of the substrate surface (dendritic appearance of the migrating silver). To assure the reliability of the Si 3N4 based products a climatic change inverter test with following test conditions, VDC=540V, T=-15°C/+85°C, RH=10%/85%, fsw=1kHz, cycle time=12h, cycles=10 has therefore been performed as additional climatic test.

13. Laser Marking

All MiniSKiiP ® modules passed the production line tests will be laser marked. The marking contains following info items:

Figure 22: Laser marking contents of MiniSKiiP ®

1. SEMIKRON logo 2. Type designation 3. SEMIKRON part number 4. Date code – 5 digits: YYWWL (L=Lot of same type per week) 5. “E”: Evaluation, engineering or application samples; for the type of sample please refer to the accompanying documents 6. “R”: Identification for compliance with RoHS 7. Data matrix code

The data matrix code consists of 53 digits and is described as follows: • type: EEC 200 • standard: ISO / IEC 16022 • cell size: 0.46 mm • field size: 24 x 24 • dimension: 11 x 11 mm plus a guard zone of 1 mm (circulating) • the following data is coded:

Table 15: MiniSKiiP ® data matrix code description

Position 1 2 3 4 5 6 7 8 9 10 11 Content Type Part Production Measure- Production Continuous Date designation number tracking ment line number code number number identifier Digits 16 1 10 12 1 1 1 1 4 1 5 Example SKiiP 25231570 14DE05006456 1 2 0018 14470 37NAB12T4V1

14. RoHS Compliance

RoHS: The Restriction of Hazardous Substances in Electrical and Electronic Equipment (RoHS) Directive (2002/95/EC) MiniSKiiP ® is in compliance with the RoHS Directive (2002/95/EC). Newer MiniSKiiP ® modules are marked with “R” behind the date code to show the compliance with RoHS in the laser marking as well (Figure 22, 6.)

15. Packing Specification

15.1 Packing Box Standard packing boxes for MiniSKiiP ® Modules:

Figure 23: Outer cardboard box, dimensions: 600 x 400 x 100 mm³ (l x w x h)

Three layers of antistatic trays with MiniSKiiP

Three additional card board boxes with pressure lids included in the outer box

600 400 mm mm

Figure 24; Antistatic tray, Figure 25: Card board for pressure dimensions: 440 x 275 x 30 mm³ lids, dimensions: 150 x 130 x 95 mm³

Cover tray on top

Bottom tray with modules

Quantities per package: MiniSKiiP ® 0 3 trays with 66 modules = 198 pcs (≈ 8.0 kg) MiniSKiiP ® 1 3 trays with 40 modules = 120 pcs (≈ 8.5 kg) MiniSKiiP ® 2 3 trays with 24 modules = 72 pcs (≈ 9.5 kg) MiniSKiiP ® 3 3 trays with 16 modules = 48 pcs (≈ 9.8 kg)

Bill of materials: Boxes: Paper (card board) Trays: A-PET (not electrically chargeable) Dry Pack: Activated and grained clay in paper bags

15.2 Marking of Packing Boxes All MiniSKiiP ® packing boxes are marked with a sticker label.

This label is placed on the packing box as can be seen in Figure 26:

Figure 26: Place for label on MiniSKiiP ® packing boxes

The label contains the following items (see Figure 27)

Figure 27: Label of MiniSKiiP ® packing boxes

Packing box label description :

1. Type designation including accessories (see table for variant codes) 2. Order: Order confirmation number 3. DMX code 4. Id.-Nr: SEMIKRON part number / variant code (see table for variant codes) 5. QTY: Quantity of modules inside the box 6. Lot: Date code=5 digits=YYWWL (example: year=2015, calendar week=33, lot=0); R=RoHS compliance

Bar Code due to • standard: EEC 200 • Format: 19/9

16. Type Designation System

Table 16: MiniSKiiP ® type designation

Position 1 2 3 4 5 6 7 Content Product Housing Current Topology Voltage IGBT Version Group Size Class Class Technology Values SKiiP 0 0-9 AC: 6-pack; 06=600V 5=Ultra fast NTP Vx=Version 1 NAB: 3-phase 07=650V 6=Trench 3 number 2 rectifier, brake 12=1200V E3=Trench 3 3 chopper, 3-phase 16=1600V E4=Trench 4 inverter; 18=1800V T4=Trench 4 ANB : 3-phase 17=1700V F4=Fast trench 4 uncontrolled rectifier, brake chopper; AHB : 3-phase half controlled rectifier, brake chopper; GH: H-bridge; GB: half bridge; ACC: twin 6-pack; MLI: 3-level (NPC); TMLI: 3-level (TNPC); NAC: 3-phase rectifier, 3-phase inverter; NEB: 1-phase rectifier, brake chopper, 3-phase inverter; Customer specific Example SKiiP 3 7 NAB 12 T4 V1

17. Caption of the Figures in the Data Sheets

17.1 Caption of Figures in the Data Sheets of “065”, “066” and “126” Modules For MiniSKiiP ® II Generation modules with “065”, “066” and “126” IGBT chip technologies (Ultra fast NPT IGBT and Fast Trench IGBT) the following captions of figures are given in the data sheet:

AC-Topologies

Fig. 1 Inverter IGBTs: Collector current IC as a function of the collector-emitter voltage VCE (typical output characteristics); Parameters: Gate-emitter voltage VGE, T j= 25°C, T j = 125°C or T j = 150°C

Fig. 2 Maximum rated continuous DC collector current IC as a function of the heat sink temperature T s Fig. 3 Collector current IC as a function of the Gate-emitter-voltage VGE (typical transfer characteristics)

Fig. 4 Maximum safe operating area for periodic turn off (RBSOA) at T j ≤ 150°C and V GE =±15V

Fig. 5 Typical Turn-on and Turn-off energy dissipation E on and E off of one IGBT switch as a function of the collector current IC for inductive load using a suitable R G ; Tj = 125°C

Fig. 6 Typical Turn-on and Turn-off energy dissipation Eon and E off of one IGBT switch as a function of the gate series resistance RG for inductive load using a suitable I c ; T j = 125°C

Fig. 7 Typical gate charge characteristic: Gate-emitter voltage V GE as a function of the gate charge Q G

Fig. 8 Transient thermal impedance Z th(j-s) of one IGBT switch and corresponding inverse diode as function of time

Fig. 9 Forward characteristics of an inverse diode. Typical and maximum values at T j = 25°C and T j = 125°C or T j = 150°C

CIB, ANB and AHB Topologies

Fig. 10 Forward characteristics of an input bridge diode. Typical and maximum values at Tj = 25°C and Tj = 125°C or Tj = 150°C

AHB-Topologies

Fig. 11 Thyristor gate voltage VG against gate current I G (total spread) showing the region of possible (BMZ) and certain (BSZ) triggering for various junction temperatures T j. The voltage and current of triggering pulses have to be in the region of certain triggering (BSZ ), but the peak pulse power P G must not exceed that given for the pulse duration t p used. The curve 20 V, 20 Ω is the inverter characteristic of an adequate trigger element.

17.2 Caption of Figures in the Data Sheets of “12T4” and “176” Modules For MiniSKiiP ® II Generation modules with Trench 3 (176) or Trench 4 (12T4) IGBT chip technologies the following captions of figures are given in the data sheet:

Fig. 1 Inverter IGBTs: Collector current I C as a function of the collector-emitter voltage V CE (typical output characteristics); Parameters: Gate-emitter voltage VGE, T j = 25°C, T j = 125°C or T j = 150°C

Fig. 2 Maximum rated continuous DC collector current IC as a function of the heat sink temperature T s

Fig. 3 Typical Turn-on and Turn-off energy dissipation Eon and E off of one IGBT switch as a function of the collector current I C for inductive load using a suitable R G ; T j = 125°C or T j = 150°C

Fig. 4 Typical Turn-on and Turn-off energy dissipation E on and E off of one IGBT switch as a function of the gate series resistance R G for inductive load using a suitable I c ; T j = 125°C or T j = 150°C

Fig. 5 Collector current I C as a function of the Gate-emitter-voltage VGE (typical transfer characteristics)

Fig. 6 Typical gate charge characteristic: Gate-emitter voltage V GE as a function of the gate charge Q G

Fig. 7 Typical Turn-on and Turn-off switching times (t d,on , t d,off , t r, t f) as a function of the collector current I C for inductive load using a suitable R G ; Tj = 125°C or T j = 150°C

Fig. 8 Typical Turn-on and Turn-off switching times (t d,on , t d,off , t r, t f) as a function of the gate series resistance R G for inductive load using a suitable I c ; T j = 125°C or T j = 150°C

Fig. 9 Transient thermal impedance Z th(j-s) of one IGBT switch and corresponding inverse diode as function of time Fig. 10 Forward characteristics of an inverse diode. Typical and maximum values at T j = 25°C and T j = 125°C or T j = 150°C

Fig. 11 Typical peak reverse recovery current IRRM of the inverse diode as a function of the fall rate d iF /d t of the forward current with corresponding gate series resistance R G of the IGBT during turn-on

Fig. 12 Typical recovery charge Q rr of the inverse diode as a function of the fall rate d iF /d t of the forward current (Parameters: forward current IF and gate series resistance R G of the IGBT during turn-on)

CIB-Topologies

Fig. 12 Forward characteristics of an input bridge diode. Typical and maximum values at T j = 25°C and Tj = 125°C or T j = 150°C

17.3 Calculation of max. DC-Current Value for “12T4” IGBTs ® In the data sheets for MiniSKiiP IGBT 4 types (“12T4”) the maximum DC-current I C,max is given. Three different considerations lead to limitations of the I C,max : • Thermal resistance for continuous operation • Limitation by main terminals • Chip size and bond configuration

17.4 Internal and External Gate Resistors Inside most of the SEMIKRON modules, IGBT chips are paralleled on the power hybrid to achieve higher currents. Therefore, the large IGBT dice contain internal gate resistors to perform acceptable decoupling when paralleled.

Figure 28: Two IGBTs with internal gate resistors paralleled

In some MiniSKiiP ® data sheets the total internal gate resistor is given, which is the equivalent resistance for the paralleled gate resistors in each chip. An example is given in Figure 28 where two IGBT dices are paralleled to one switch of the module with the external power connectors “C” and “E” and the external gate connector “G”. Each chip has his own gate resistor (R G-int1 and R G-int2 ). The equivalent resistance RG-int given in the data sheet is

= 1 R int-G 1 + 1 R int1-G R int2-G

Assuming that R G-int1 = R G-int2 (the same IGBT-type) the data sheet value RG-int is half the value of the resistor on a single chip (R G-int1 and R G-int2 ) in this example:

= 1 = 1 = R int1-G R int-G 1 + 1 2 2 R int1-G R int1-G R int1-G

The external gate resistor values R G-on and R G-off given in the data sheets are recommendations from SEMIKRON to achieve smooth switching behaviour together with low switching losses. Since the switching behaviour strongly depends on the external assembly, the external gate resistors R G-on and R G-off have to be tested in the customer application and – if necessary – adjusted.

18. Accessories

18.1 Evaluation Boards The evaluation boards (example Figure 29: Dynamic evaluation board for MiniSKiiP ®2 “AC” types) are offered to customers for design support to enable a fast and convenient way to connect the MiniSKiiP ® with a lab or breadboard circuit.

Figure 29: Dynamic evaluation board for MiniSKiiP ®2 “AC” types

Generic Specification Material : FR4 2 layer board Dimensions : specific to board, see below Thickness : 1.5mm Conductor : 70µm Cu, PbSn plating Mounting : all 4 corners prepared for clip on feet stand offs, Ø 4mm or threaded stand offs, screw Ø 4mm Auxiliary terminals : prepared for use of solder pins, board to wire connectors or board to board connectors.

Static board connectors: 5pol single in line, grid dimension 5mm, pin Ø 2mm 7pol single in line, grid dimension 5mm, pin Ø 2mm

Dynamic board connectors: 2pol single in line, grid dimension 2.54mm, pin Ø1 mm; 10pol single in line, grid dimension 2.54mm, pin Ø1 mm

Main terminals of static and dynamic boards are prepared for use of cable sockets and screws: • +/- DC connection: Ø 5mm • Phase out (U,V,W) connection: Ø 4mm.

Maximum continuous current: Idmax = 30Amp*

* limited by the current capability of the narrowest part of the conductor path. Not all evaluation board layouts are suitable for full current rating of the corresponding MiniSKiiP ® type! New generation boards lead free and with higher current capability are in preparation.

18.1.1 Static Test Boards For static measurements only. This layout is optimized to have the shortest connection between the Terminal and the Chips/Springs. The static test board allows an easy and fast connection to the MiniSKiiP ® in a lab circuit to evaluate the static values like V CEsat , V f, Rth , etc.

18.1.2 Dynamic Test Boards The dynamic board layout is optimized for dynamic operation. Therefore a low stray inductance design was realized. The boards allow as well the use of capacitors and resistors for a DC link pre-charge circuit.

Recommendation: 2 electrolytic capacitors 330μF / 400V, Ø 30mm 2 resistors 68KΩ/ 4W, 1 resistor 330Ω/ 4W

Dynamic test boards are for use under application near conditions for breadboard constructions but with limited current. As stated above the dynamic test boards are not designed for use in the final customer product and not for use of max module current.

18.1.3 Order Codes for Evaluation Boards Evaluation board can be ordered using following P/Ns:

Table 17: MiniSKiiP ® evaluation boards Housing Topology Static Board Static Board Dynamic Board Dynamic Board size P/N Dimensions P/N Dimensions 0 AC 41085315 160mm x 100mm 41085310 130mm x 132mm 0 NAC 41094855 160mm x 100mm 41094850 130mm x 132mm 0 NEB 41094875 160mm x 100mm 41094870 130mm x 132mm 1 AC 41085245 160mm x 100mm 41085240 135mm x 105mm 1 ACC 41097595 160mm x 100mm 41097590 130mm x 134mm 1 NAB 41085295 160mm x 100mm 41085290 125mm x 135mm 2 AC 41085255 160mm x 100mm 41085250 130mm x 140mm 2 ACC 41100585 160mm x 100mm 41100580 130mm x 134mm 2 NAB 41085305 160mm x 100mm 41085300 130mm x 140mm 2 MLI 45103600 120mm x 105mm 2 TMLI (28TMLI) 45115200 176mm x 131mm 2 TMLI (29TMLI) 45124800 176mm x 131mm 2 ANB (1700V) 45114100 176mm x 131mm 2 NAB (1700V) 45117900 176mm x 131mm 2 GB 45117200 140mm x 115mm 3 AC (126) 41085335 160mm x 100mm 41085330 163mm x 114mm 3 AC (12T4) L5047100 160mm x 125mm 3 NAB 41085235 160mm x 100mm 41085230 163mm x 114mm 3 MLI 45102900 145mm x 105mm 3 AC (1700V) 45117500 176mm x 131mm 3 NAB (1700V) 45118100 176mm x 131mm 3 GB 45117300 140mm x 115mm 3 TMLI (39TMLI) 45112000 105mm x 145mm

Additional boards for special types may be available on request. Please contact our closest sales office.

18.2 Pressure Lid The following pressure lid P/Ns are worldwide present in the NAVISION ERP system.

Table 18: MiniSKiiP ® II pressure lids Size Slim Type P/N Standard Type P/N 0 25121040 25121000 1 25121050 25121010 2 25121060 25121020 3 25121070 25121030

Please refer to chapter “ordering codes” to select the correct order (variant) code.

MiniSKiiP ® II pressure lid drawings in special file formats are available on request. Please contact our closest sales office.

18.3 Pre-Applied Thermal Paste ® SEMIKRON offers MiniSKiiP power modules with following types of pre-applied thermal paste:

• Wacker P12 (silicone-based) • Electrolube HTC (non-silicone-based) • High performance thermal paste (silicone-based)

Figure 30: MiniSKiiP® with pre-applied thermal paste

Please refer to chapter “Ordering Codes” to select the correct order (variant) code.

18.4 Mechanical Sample Mechanical samples can be ordered using following P/Ns:

Table 19: MiniSKiiP ® II mechanical samples Housing size P/N 0 25231100 1 25231110 2 25231120 3 25231130

19. Ordering Codes

Table 20: MiniSKiiP ® ordering codes (variant codes) Variant Description code M00 MiniSKiiP ® module without any accessory M01 MiniSKiiP ® module + thermal paste (P12, λ=0.8 W/mK) M02 MiniSKiiP ® module + thermal paste (HTC, λ=0.9 W/mK) M05 MiniSKiiP ® module + thermal paste (HpTp, λ=2.5 W/mK) M10 MiniSKiiP ® module + slim pressure lid (2.8mm height) M11 MiniSKiiP ® module + slim pressure lid (2.8mm height) + thermal paste (P12, λ=0.8 W/mK) M12 MiniSKiiP ® module + slim pressure lid (2.8mm height) + thermal paste (HTC, λ=0.9 W/mK) M15 MiniSKiiP ® module + slim pressure lid (2.8mm height) + thermal paste (HpTp, λ=2.5 W/mK) M20 MiniSKiiP ® module + standard pressure lid (6.5mm height) M21 MiniSKiiP ® module + standard pressure lid (6.5mm height) + thermal paste (P12, λ=0.8 W/mK) M22 MiniSKiiP ® module + standard pressure lid (6.5mm height) + thermal paste (HTC, λ=0.9 W/mK) M25 MiniSKiiP ® module + standard pressure lid (6.5mm height) + thermal paste (HpTp, λ=2.5 W/mK)

20. Disclaimer

IMPORTANT NOTICE: The technical data and hardware of the above offered evaluation boards are serving for technical support only. Any warranty is excluded. Technical details may change without notice.

No components are included in delivery. All boards will be delivered without Connectors, SMDs, Standoffs etc. All above mentioned components are standard components available at electronic distributors. No components are available from SEMIKRON neither as kits nor as individual parts.

The evaluation boards are not suitable to replace final PCBs or for use in customer end-products.

DISCLAIMER: SEMIKRON does not take on any liability for literal mistakes in the above displayed “Technical Information”. The content of the information is according to today’s standards and knowledge and written up with necessary care. A liability for usableness and correctness is excluded. A liability for direct or secondary damages resulting from use of this information is excluded, unless regulated by applicable law. The given examples are not taking in consideration individual cases, therefore a liability is excluded. The content is subject to change without further notice. In addition to that the SEMIKRON terms and condition apply exclusively, valid version displayed under http://www.semikron.com.

SEMIKRON INTERNATIONAL GmbH P.O. Box 820251 • 90253 Nuremberg • Germany Tel: +49 911-65 59-234 • Fax: +49 911-65 59-262 [email protected] • www.semikron.com