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MEMS Fabrication MEMS Fabrication Wright State University Fabrication EE480/680 Fabrication Micro-Electro-Mechanical Systems (MEMS) Summer 2006 LaVern Starman, Ph.D. Assistant Professor Dept. of Electrical and Computer Engineering Email: [email protected] Help ! Spin-coating photoresist onto a wafer EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 1 EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 2 MEMS Fabrication MEMS Fabrication Micromachining consists of • Micromachining combines Lithography, Thin Film four separate areas: Processing, and Sacrificial Etching to form • Substrates and Dopants – Starting point mechanical devices • Patterning - Lithography • Three Types of Fabrication Processes • Additive Processes - Deposition • Subtractive Process - Etching • Surface Micromachining Combining Lithography with • Bulk Micromachining • Substrates and Dopants • Additive Processes • Microforming • Subtractive Process Results in Micromachining!! EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 3 EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 4 1 MEMS Fabrication Overview Microforming Surface Bulk • Materials micromachining Micromachining • Microelectronics Fabrication • Bulk Micromachining • Surface Micromachining • Micromolding • Packaging Substrate EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 5 EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 6 Why Silicon Processing? Materials • Traditionally, MEMS have been fabricated using the same materials used in silicon (Si) based microelectronics - this is what we will concentrate on. 1) Abundant and Inexpensive • Crystalline Si • Polycrystalline Si (polysilicon) 2) Billions invested in developing pure • Oxides of Si wafers and Silicon processing • Polycrystalline or Amorphous Dielectric Layers • Metal Films 3) Native Oxide with good electrical properties Addison Engineering EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 7 EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 8 2 Materials Materials • Si crystal structure • Miller Indices • Diamond, or equivalently, two interpenetrating FCC lattices by a/4 along • Specific plane (hkl), set of equivalent planes {hkl} <111> • Specific direction [hkl] parallel to normal of plane (hkl), set of equivalent directions <hkl> z (c) a (111) = 1/1, 1/1, 1/1 (100) = 1/1, 1/∞,1/∞ y (b) a a x (a) “a” is the lattice constant, for Si, a = 5.43 Å at 300 K EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 9 EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 10 Materials: Properties Materials: Properties Kovacs, Micromachined Transducers Sourcebook, 1998 Gardner, Microsensors, 1994. EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 11 EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 12 3 Materials: Properties Primary Micromachining Substrates Elemental Semiconductors (Group IV) • Silicon •Germanium Compound Semiconductors (III-V) • Gallium Arsenide • Indium Phosphide Non-Semiconductor Substrates • Quartz Gardner, Microsensors, 1994. Gardner, Microsensors, MEMS and Smart Devices, 2001. • Sapphire EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 13 EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 14 Overview Microelectronics Fabrication Impurity Anneal Doping Design • Materials Wafer Surface Film Photolithography • Microelectronics Fabrication Preparation Formation • Bulk Micromachining • Surface Micromachining Etching 1. • Micromolding 13 Mask Set • Packaging Subdice Inspection/Test Packaging Final Test EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 15 EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 16 4 MEMS Fabrication Microelectronics Fabrication Impurity Anneal Doping Chemical/mechanical Design • Wafer Fabrication polishing of wafers Wafer • Czochralski (CZ) (CMP) Surface Film Photolithography • Float Zone (FZ) Preparation Formation Bonding and/or 1. Etching 13 Mask Set Wafer standard Subdice Inspection/Test markings. Primary Etching flats are shown down. Etching (CZ) Final Test Packaging, Integration, and/or Assembly Gardner, Microsensors, MEMS and Smart Devices, 2001. EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 17 EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 18 MEMS Fabrication MEMS Fabrication • Primarily Integrated Circuit type fabrication • Direct Mechanical-Electrical Integration • One fab process for both IC and MEMS • Allows Batch Fabrication • Direct Sensor, Processor, Actuator Integration Interface Circuitry MEMS Sense Devices Circuitry picture of ADXL202 from www.analog.com EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 19 EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 20 5 MEMS Fabrication Microelectronics Fabrication • Film Formation (thin < 5µm, thick < 50 µm) • Thermal Oxidation (wet/dry) • The enhancement of the transformation of Si into SiO2, consumption ratio 0.44 Si/SiO2 • Amorphous thin films, conformal coating • 1000 - 1200 °C, atmospheric pressure, hours deposition times • Passivation, sacrificial layers, hard etch/diffusion mask, insulation • Chemical Vapor Deposition (CVD) • LPCVD, MOCVD, PCVD • The nucleation of a gaseous species on a substrate to form a film • Polycrystalline or Amorphous thin films, conformal coating Micromachining is not 3D • ≈ 600 °C, low - atmospheric pressure, on order of 1 µm/hour deposition rates • Structural layers, passivation, sacrificial layers, hard etch/diffusion mask, insulation, While a large variety of some metals, SiO2, Si3N4, polySi, phosphosilicate glass (PSG) structures are possible, arbitrary 3D structures are difficult to fabricate EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 21 EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 22 Microelectronics Fabrication Microelectronics Fabrication • Film Formation (thin < 5µm, thick < 50 µm) • Film Formation (thin < 5µm, thick < 50 µm) • Evaporation • Sputtering • The physical removal of atoms from a target by energized ions (plasma) and • The evaporation of metals by resistive, inductive, or electron beam heating in reformation of a film on a substrate order for condensation to occur on a substrate, thereby, forming a film • Amorphous thin films, conformal/nonconformal coatings • Amorphous thin films, semi-conformal coating • High vaccum • From melting temperature of metal to 200 °C, high vacuum, on order of 2 • Most materials can be sputtered: metals, organics, inorganics µm/hour deposition rates • Electroplating • Metal conductor lines, solder • The electrochemical reaction of a solution, on a seed surface, to form a metal film deposition, mirror surfaces, • Amorphous thick and greater films electrical contacts • Spin Casting • Thin film material dissolved in a volatile liquid solvent, spin coated onto a substrate to form films • Low quality, but convenient amorphous thin or thick films • Room temperature application, ≈ 100 °C cure temperatures • Organic polymers, inorganic glasses EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 23 EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 24 6 Sputtering System Microelectronics Fabrication Dopant Ions • Impurity Doping Source Dopant • Si or polysilicon doped for the purpose of Gas or Doped increasing conductivity or creating etch stops Layer Mask • Constant/Limited Source Diffusion or Ion Implantation Substrate • B in Si is p-type • P in Si is n-type Si Si Si Si Spire Corporation EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 25 EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 26 Microelectronics Fabrication Microelectronics Fabrication • Photolithography • Photolithography - Mask Production • The technique of transferring a pattern to • When masks are designed, each design layer must be specified as either: UV light a surface • Light Field or Dark Field • Etch masks (soft), insulating layers, passivation, • With light field, a polygon on your design will appear as a polygon of chrome (which will block UV) on the mask. Conversely for dark field. protection, structures • The type of photoresist (positive or negative) will determine what the developed features look like. • Contact, Proximity, and Printing Design layer (as seen on computer screen) Glass or Quartz Mask Plate Chromium Dark Field Pattern Light Field Shadow Gardner, Microsensors, MEMS and Smart Photoresist Devices, 2001. Chromium layer (as seen on mask) EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 27 EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 28 7 Lithography Microelectronics Fabrication • Photolithography Substrate Negative Resist Substrate Substrate Spinner Bench and Relevant Mask Aligner Chemicals & Supplies Positive Resist EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 29 EE 480/680, Summer 2006, WSU, L. Starman MicroElectroMechanical Systems (MEMS) 30 Microelectronics Fabrication Microelectronics Fabrication • Etching • Etching Etchant Products • The process of selectively
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