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Comparison of Leading Edge 3D NAND Memories TOSHIBA-Sandisk /SAMSUNG/SK HYNIX/INTEL- MICRON Memory Report by Belinda Dube December 2018

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Comparison of Leading Edge 3D NAND Memories TOSHIBA-Sandisk /SAMSUNG/SK HYNIX/INTEL- MICRON Memory Report by Belinda Dube December 2018 REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT 3D NAND FLASH MEMORIES Comparison of Leading Edge 3D NAND Memories TOSHIBA-SanDisk /SAMSUNG/SK HYNIX/INTEL- MICRON Memory report by Belinda Dube December 2018 22 Bd. Benoni Goullin 44200 NANTES - FRANCE +33 2 40 18 09 16 [email protected] www.systemplus.fr Table of Contents Overview / Introduction 4 o SK Hynix 80 o Executive Summary Synthesis o Reverse Costing Methodology Die design Company Profile 8 Cross-Section o Toshiba/SanDisk Patents o Samsung o SK Hynix o Intel/ Micron 110 o Micron/Intel Synthesis Die design Cross-Section Technology & Market 8 o NAND Roadmap Patents o NAND Revenue Manufacturing Process Flow 146 o Global Overview Physical Analysis 14 o Wafer Fabrication Unit o Toshiba Synthesis of the Physical Analysis o Front-End Process o Toshiba Physical Analysis Methodology o Toshiba Physical analysis Cost Analysis 179 Die o Synthesis of the cost analysis Cross-Section Yields Explanation & Hypotheses o Toshiba Patents NAND wafer and die cost o Samsung Synthesis of the Physical Analysis 53 Front-End Cost o Samsung Physical Analysis Methodology Component Cost o Samsung Physical analysis Die Estimated Price and Manufacturer Gross Margin 228 Cross-Section Company services 239 o Samsung Patents Executive Summary Overview / Introduction o Executive Summary The memory semiconductor industry continues to grow due to higher memory demand in consumer electronics and o Reverse Costing Methodology mass storage. Remarkable investments are channeled into the memory manufacturing business. IoT escalates this o Glossary demand and hence manufacturers continue to increase the die density of memories at the same time aiming on Company Profile reduction of the NAND die. The manufacturing process is complex compared to most semiconductor products. Each manufacturer proposes different manufacturing techniques with each generation in order to lower the wafer Physical Analysis manufacturing by reducing the patterning count and cost. Manufacturing Process Flow This report details each process and features found in the latest NAND Memories. This full reverse costing study has Cost Analysis been conducted to provide insight on technology data, detailed analysis of microstructural features, wafer manufacturing cost and die selling price of the latest LEADING EDGE 3D NAND MEMORIES produced by the four top Estimated Price Analysis manufacturers in the NAND memory industry. Related Reports Toshiba/SanDisk, Samsung , Micron/Intel have produced 64 Layers in their latest 3D NAND and SK Hynix have the About System Plus highest number of layers in their NAND Memory having 72 layers in their latest 3D NAND. Based on complete teardown analyses of the 3D, the reports provide the physical analysis and detailed manufacturing methods and cost estimation of each 3D NAND wafer. Comparison is made on the technology used, feature differences and the wafer fabrication technics used by each manufacturer and their estimated cost. Moreover, the report proposes a comparison of the four different NAND memories, highlights the differences in design and manufacturing process. All the 3D NAND memory manufacturers use the 12 inch wafer (300mm). Executive Summary Overview / Introduction o Executive Summary o Reverse Costing Methodology o Glossary Company Profile Physical Analysis Manufacturing Process Flow Cost Analysis Estimated Price Analysis Related Reports About System Plus Toshiba NAND- Packaging (with mesurements) Overview / Introduction Company Profile Technology and market Physical Analysis o NAND Synthesis o Toshiba/SanDisk Synthesis o Toshiba/SanDisk Package o Toshiba/SanDisk Physical Analysis o Toshiba/SanDisk Patent o Toshiba Outline o Samsung Synthesis o Samsung Package o Samsung Physical Analysis o Samsung Patent o Samsung Outline o SK Hynix Synthesis o SK Hynix Package o SK Hynix Physical Analysis o SK Hynix Patent o SK Hynix Outline o Intel/Micron Synthesis o Intel/Micron Package o Intel/Micron Physical Analysis o Intel/Micron Patent o Intel/Micron outline o Comparison Manufacturing Process Flow Cost Analysis Estimated Price Analysis Related Reports About System Plus Toshiba NAND - Multiple Layer Etch Overview / Introduction Company Profile Technology and market Physical Analysis Dielectric support pillar : o NAND Synthesis o Toshiba/SanDisk Synthesis • o Toshiba/SanDisk Package High Aspect Ratio etching is perfomed o Toshiba/SanDisk Physical through dielectric material oxide and Analysis alternating stack o Toshiba/SanDisk Patent o Toshiba Outline o Samsung Synthesis • The opening extending through the o Samsung Package o Samsung Physical Analysis terrace is filled with SiO2 o Samsung Patent o Samsung Outline o SK Hynix Synthesis • This support pillar is useful in providing o SK Hynix Package mechanical support to the terrace o SK Hynix Physical Analysis o SK Hynix Patent structure to avoid collapse during SiN wet o SK Hynix Outline etching. o Intel/Micron Synthesis o Intel/Micron Package o Intel/Micron Physical Channel Hole Analysis o Intel/Micron Patent • High Aspect Ratio etch is also perfomed in o Intel/Micron outline creation, of channel hole and memory o Comparison slits. Manufacturing Process Flow Cost Analysis Estimated Price Analysis Cell Vertical structure (full view) –SEM ©2018 by System Plus Consulting Related Reports About System Plus Toshiba NAND- Logic Area : Transistor Technology Overview / Introduction Company Profile Technology and market Physical Analysis o NAND Synthesis o Toshiba/SanDisk Synthesis o Toshiba/SanDisk Package o Toshiba/SanDisk Physical Analysis o Toshiba/SanDisk Patent o Toshiba Outline o Samsung Synthesis o Samsung Package o Samsung Physical Analysis o Samsung Patent o Samsung Outline o SK Hynix Synthesis o SK Hynix Package 620nm o SK Hynix Physical Analysis o SK Hynix Patent o SK Hynix Outline o Intel/Micron Synthesis 320nm o Intel/Micron Package o Intel/Micron Physical Analysis o Intel/Micron Patent 620nm o Intel/Micron outline o Comparison Manufacturing Process Flow Cost Analysis Estimated Price Analysis Related Reports About System Plus Samsung Memory- Memory Cross section- staircase Overview / Introduction Company Profile Technology and market Physical Analysis o NAND Synthesis o Toshiba/SanDisk Synthesis o Toshiba/SanDisk Package o Toshiba/SanDisk Physical Analysis o Toshiba/SanDisk Patent o Toshiba Outline o Samsung Synthesis o Samsung Package o Samsung Physical Analysis o Samsung Patent o Samsung Outline o SK Hynix Synthesis o SK Hynix Package o SK Hynix Physical Analysis o SK Hynix Patent o SK Hynix Outline o Intel/Micron Synthesis o Intel/Micron Package o Intel/Micron Physical Analysis o Intel/Micron Patent o Intel/Micron outline o Comparison Manufacturing Process Flow Cost Analysis Estimated Price Analysis Related Reports About System Plus NAND Memory Staircase ©2018 by System Plus Consulting Samsung Memory- Memory Cross section- staircase Overview / Introduction Company Profile Technology and market Physical Analysis o NAND Synthesis o Toshiba/SanDisk Synthesis o Toshiba/SanDisk Package o Toshiba/SanDisk Physical Analysis o Toshiba/SanDisk Patent o Toshiba Outline o Samsung Synthesis o Samsung Package o Samsung Physical Analysis o Samsung Patent o Samsung Outline o SK Hynix Synthesis o SK Hynix Package o SK Hynix Physical Analysis o SK Hynix Patent o SK Hynix Outline o Intel/Micron Synthesis o Intel/Micron Package o Intel/Micron Physical Analysis o Intel/Micron Patent o Intel/Micron outline o Comparison Manufacturing Process Flow Cost Analysis Estimated Price Analysis Related Reports About System Plus SK Hynix Memory- Effective unit Area Overview / Introduction Company Profile Technology and market Physical Analysis o NAND Synthesis o Toshiba/SanDisk Synthesis o Toshiba/SanDisk Package o Toshiba/SanDisk Physical Analysis o Toshiba/SanDisk Patent o Toshiba Outline o Samsung Synthesis o Samsung Package o Samsung Physical Analysis o Samsung Patent o Samsung Outline o SK Hynix Synthesis o SK Hynix Package o SK Hynix Physical Analysis o SK Hynix Patent o SK Hynix Outline o Intel/Micron Synthesis o Intel/Micron Package o Intel/Micron Physical Analysis o Intel/Micron Patent o Intel/Micron outline o Comparison Manufacturing Process Flow Cost Analysis Estimated Price Analysis Related Reports About System Plus Intel/Micron Memory- Double stack technic Overview / Introduction Company Profile Technology and market Physical Analysis o NAND Synthesis o Toshiba/SanDisk Synthesis o Toshiba/SanDisk Package o Toshiba/SanDisk Physical Analysis o Toshiba/SanDisk Patent o Toshiba Outline o Samsung Synthesis o Samsung Package o Samsung Physical Analysis o Samsung Patent o Samsung Outline o SK Hynix Synthesis o SK Hynix Package o SK Hynix Physical Analysis o SK Hynix Patent o SK Hynix Outline o Intel/Micron Synthesis o Intel/Micron Package o Intel/Micron Physical Analysis o Intel/Micron Patent o Intel/Micron outline o Comparison Manufacturing Process Flow Cost Analysis Estimated Price Analysis Related Reports About System Plus Die comparison Overview / Introduction Company Profile Technology and market Physical Analysis o NAND Synthesis o Toshiba/SanDisk Synthesis o Toshiba/SanDisk Package o Toshiba/SanDisk Physical Analysis o Toshiba/SanDisk Patent o Toshiba Outline o Samsung Synthesis o Samsung Package o Samsung Physical Analysis o Samsung Patent o Samsung Outline o SK Hynix Synthesis o SK Hynix Package o SK Hynix Physical Analysis o SK Hynix Patent o SK Hynix Outline o Intel/Micron Synthesis o Intel/Micron Package o Intel/Micron Physical Analysis o
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