Bipolar Junction Transistors
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What Is a Neutral Earthing Resistor?
Fact Sheet What is a Neutral Earthing Resistor? The earthing system plays a very important role in an electrical network. For network operators and end users, avoiding damage to equipment, providing a safe operating environment for personnel and continuity of supply are major drivers behind implementing reliable fault mitigation schemes. What is a Neutral Earthing Resistor? A widely utilised approach to managing fault currents is the installation of neutral earthing resistors (NERs). NERs, sometimes called Neutral Grounding Resistors, are used in an AC distribution networks to limit transient overvoltages that flow through the neutral point of a transformer or generator to a safe value during a fault event. Generally connected between ground and neutral of transformers, NERs reduce the fault currents to a maximum pre-determined value that avoids a network shutdown and damage to equipment, yet allows sufficient flow of fault current to activate protection devices to locate and clear the fault. NERs must absorb and dissipate a huge amount of energy for the duration of the fault event without exceeding temperature limitations as defined in IEEE32 standards. Therefore the design and selection of an NER is highly important to ensure equipment and personnel safety as well as continuity of supply. Power Transformer Motor Supply NER Fault Current Neutral Earthin Resistor Nov 2015 Page 1 Fact Sheet The importance of neutral grounding Fault current and transient over-voltage events can be costly in terms of network availability, equipment costs and compromised safety. Interruption of electricity supply, considerable damage to equipment at the fault point, premature ageing of equipment at other points on the system and a heightened safety risk to personnel are all possible consequences of fault situations. -
Cascode Amplifiers by Dennis L. Feucht Two-Transistor Combinations
Cascode Amplifiers by Dennis L. Feucht Two-transistor combinations, such as the Darlington configuration, provide advantages over single-transistor amplifier stages. Another two-transistor combination in the analog designer's circuit library combines a common-emitter (CE) input configuration with a common-base (CB) output. This article presents the design equations for the basic cascode amplifier and then offers other useful variations. (FETs instead of BJTs can also be used to form cascode amplifiers.) Together, the two transistors overcome some of the performance limitations of either the CE or CB configurations. Basic Cascode Stage The basic cascode amplifier consists of an input common-emitter (CE) configuration driving an output common-base (CB), as shown above. The voltage gain is, by the transresistance method, the ratio of the resistance across which the output voltage is developed by the common input-output loop current over the resistance across which the input voltage generates that current, modified by the α current losses in the transistors: v R A = out = −α ⋅α ⋅ L v 1 2 β + + + vin RB /( 1 1) re1 RE where re1 is Q1 dynamic emitter resistance. This gain is identical for a CE amplifier except for the additional α2 loss of Q2. The advantage of the cascode is that when the output resistance, ro, of Q2 is included, the CB incremental output resistance is higher than for the CE. For a bipolar junction transistor (BJT), this may be insignificant at low frequencies. The CB isolates the collector-base capacitance, Cbc (or Cµ of the hybrid-π BJT model), from the input by returning it to a dynamic ground at VB. -
Notes for Lab 1 (Bipolar (Junction) Transistor Lab)
ECE 327: Electronic Devices and Circuits Laboratory I Notes for Lab 1 (Bipolar (Junction) Transistor Lab) 1. Introduce bipolar junction transistors • “Transistor man” (from The Art of Electronics (2nd edition) by Horowitz and Hill) – Transistors are not “switches” – Base–emitter diode current sets collector–emitter resistance – Transistors are “dynamic resistors” (i.e., “transfer resistor”) – Act like closed switch in “saturation” mode – Act like open switch in “cutoff” mode – Act like current amplifier in “active” mode • Active-mode BJT model – Collector resistance is dynamically set so that collector current is β times base current – β is assumed to be very high (β ≈ 100–200 in this laboratory) – Under most conditions, base current is negligible, so collector and emitter current are equal – β ≈ hfe ≈ hFE – Good designs only depend on β being large – The active-mode model: ∗ Assumptions: · Must have vEC > 0.2 V (otherwise, in saturation) · Must have very low input impedance compared to βRE ∗ Consequences: · iB ≈ 0 · vE = vB ± 0.7 V · iC ≈ iE – Typically, use base and emitter voltages to find emitter current. Finish analysis by setting collector current equal to emitter current. • Symbols – Arrow represents base–emitter diode (i.e., emitter always has arrow) – npn transistor: Base–emitter diode is “not pointing in” – pnp transistor: Emitter–base diode “points in proudly” – See part pin-outs for easy wiring key • “Common” configurations: hold one terminal constant, vary a second, and use the third as output – common-collector ties collector -
“WW 2,873,387 United States Patent Rice Patented Feb
Feb. 10, 1959 M. c. KIDD 2,873,387 CONTROLLABLE.‘ TRANSISTOR CLIPPING CIRCUIT Filed Dec. 17, '1956 INVENTOR. v MARSHALL [.KIDD “WW 2,873,387 United States Patent rice Patented Feb. 10, 1959. 2 tap 34 on a second source of energizing potential, here illustrated as a battery 30, through a load resistor 32. 2,873,387 The battery 30 has a ground tap 31 at an intermediate point thereon, and the variable tap 34 allows the ener CONTROLLABLE TRANSISTOR CLIPPING gizing potential supplied to the collector electrode 14 to cmcurr be varied from a positive to a negative value. Output Marshall vC. Kidd, Haddon Heights, N. J., assignor to signals are derived between an output terminal 36, which Radio Corporation of America, a corporation of Dela is connected directly to the collector electrode 14 of the ware ‘ ‘ transistor 16, and a ground terminal 37. One type of 10 clipped or limited output signal that is available at the Application December 17, 1956, Serial No. 628,807 output terminals 36 is illustrated by the waveform 38, 5 ‘Claims. (Cl. 307-885) and the manner in which it is derived is hereinafter de scribed. , In order to describe the operation of the circuit, as This invention relates to signal translating circuits and 15 sume that the variable tap 34 on the battery 30 is set more particularly to transistor circuits for limiting or so that a small positive voltage, negative, however, with clipping a translated signal; - respect to base electrode voltage, appears on the collector In many types of electronic equipment, such as tele electrode 14, and that a sine wave is applied to the input vision, radar, computer and like equipment, it may be terminal 10, as illustrated by the waveform 18. -
Tektronix Cookbook of Standard Audio Tests
( Copyright © 1975, Tektronix, Inc. AI! rig hts re served P ri nt ed· in U .S.A. ForeIg n and U .S.A. Products of Tektronix , Inc. are covered by Fore ign and U .S.A . Patents and /o r Patents Pending. Inform ation in thi s publi ca tion supersedes all previously published material. Specification and price c hange pr ivileges reserve d . TEKTRON I X, SCOPE-MOBILE, TELEOU IPMENT, and @ are registered trademarks of Tekt ro nix, Inc., P. O. Box 500, Beaverlon, Oregon 97077, Phone : (Area Code 503) 644-0161, TWX : 910-467-8708, Cabl e : TEKTRON IX. Overseas Di stributors in over 40 Counlries. 1 STANDARD AUDIO TESTS BY CLIFFORD SCHROCK ACKNOWLEDGEMENTS The author would like to thank Linley Gumm and Gordon Long for their excellent technical assistance in the prepara tion of this paper. In addition, I would like to thank Joyce Lekas for her editorial assistance and Jeanne Galick for the illustrations and layout. CONTENTS PRELIMINARY INFORMATION Test Setups ________________ page 2 Input- Output Load Matching ________ page 3 TESTS Power Output _______________ page 4 Frequency Response ____________ page 5 Harmonic Distortion _____________ page 7 Intermodulation Distortion __________ page 9 Distortion vs Output _____________ page 11 Power Bandwidth page 11 Damping Factor page 12 Signal to Noise Ratio page 12 Square Wave Response page 15 Crosstalk page 16 Sensitivity page 16 Transient Intermodulation Distortion page 17 SERVICING HINTS___________ page19 PRELIMINARY INFORMATION Maintaining a modern High-Fidelity-Stereo system to day requires much more than a "trained ear." The high specifications of receivers and amplifiers can only be maintained by performing some of the standard measure ments such as : 1. -
Resistors, Diodes, Transistors, and the Semiconductor Value of a Resistor
Resistors, Diodes, Transistors, and the Semiconductor Value of a Resistor Most resistors look like the following: A Four-Band Resistor As you can see, there are four color-coded bands on the resistor. The value of the resistor is encoded into them. We will follow the procedure below to decode this value. • When determining the value of a resistor, orient it so the gold or silver band is on the right, as shown above. • You can now decode what resistance value the above resistor has by using the table on the following page. • We start on the left with the first band, which is BLUE in this case. So the first digit of the resistor value is 6 as indicated in the table. • Then we move to the next band to the right, which is GREEN in this case. So the second digit of the resistor value is 5 as indicated in the table. • The next band to the right, the third one, is RED. This is the multiplier of the resistor value, which is 100 as indicated in the table. • Finally, the last band on the right is the GOLD band. This is the tolerance of the resistor value, which is 5%. The fourth band always indicates the tolerance of the resistor. • We now put the first digit and the second digit next to each other to create a value. In this case, it’s 65. 6 next to 5 is 65. • Then we multiply that by the multiplier, which is 100. 65 x 100 = 6,500. • And the last band tells us that there is a 5% tolerance on the total of 6500. -
FJP2145 — ESBC™ Rated NPN Power Transistor MOS- (2) ™ March 2015 FDC655 FJP2145 S C G B Figure 3
FJP2145 — ESBC™ Rated ESBC™ FJP2145 — March 2015 FJP2145 ESBC™ Rated NPN Power Transistor ESBC Features (FDC655 MOSFET) Description NPN Power Transistor (1) The FJP2145 is a low-cost, high-performance power VCS(ON) IC Equiv. RCS(ON) switch designed to provide the best performance when 0.21 V 2 A 0.105 Ω used in an ESBC™ configuration in applications such as: • Low Equivalent On Resistance power supplies, motor drivers, smart grid, or ignition • Very Fast Switch: 150 kHz switches. The power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exception- • Wide RBSOA: Up to 1100 V ally low on-resistance and very low switching losses. •Avalanche Rated ™ • Low Driving Capacitance, No Miller Capacitance The ESBC switch can be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOS- • Low Switching Losses FET is a low-voltage, low-cost, surface-mount device that • Reliable HV Switch: No False Triggering due to combines low-input capacitance and fast switching. The High dv/dt Transients ESBC™ configuration further minimizes the required driv- ing power because it does not have Miller capacitance. Applications The FJP2145 provides exceptional reliability and a large • High-Voltage, High-Speed Power Switch operating range due to its square reverse-bias-safe-oper- • Emitter-Switched Bipolar/MOSFET Cascode ating-area (RBSOA) and rugged design. The device is (ESBC™) avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures. • Smart Meters, Smart Breakers, SMPS, HV Industrial Power Supplies The power switch is manufactured using a dedicated • Motor Drivers and Ignition Drivers high-voltage bipolar process and is packaged in a high- voltage TO-220 package. -
Topaz Sr10 / Sr20 Stereo Receivers Top-Tips
TOPAZ SR10 / SR20 STEREO RECEIVERS TOP-TIPS Incredible performance, connectivity and value for money… The most powerful amplifiers in the Topaz range are designed to on the back allow you to connect traditional sources such as be the heart of your separates hi-fi system. The SR10 offers a CD players and even Blu-ray players. Thanks to a high quality room-filling 85 watts per channel and is backed by a dedicated Wolfson DAC, the SR20 goes one step further and provides three subwoofer output as well as two sets of speaker outputs - so you additional digital audio inputs, allowing the connection of digital can listen in two rooms at once or bi-wire your main speakers for sources such as streamers, TVs or set top boxes. a true audiophile performance. The SR20 steps things up a notch The SR10 and SR20’s playback capabilities also include a built- by offering the same flexible connectivity, but with an even more in FM/AM tuner, giving you access to all of your favourite radio powerful 100 watts per channel, driving virtually any loudspeaker stations with ease. We only use pure audiophile components, including discreet However you listen to your music, the SR10 and SR20 have it amplifiers, full metal chassis’ and high-performance toroidal covered. They boast a built-in phono stage so you can instantly transformers. The Topaz SR10 and SR20 are a winning connect a turntable, and a direct front panel input for iPods, combination of power, connectivity and purity, putting far more smart phones or MP3 players. -
Designing a Common-Collector Amplifier
SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Tutorial #6: Designing a Common-Collector Amplifier BACKGROUND In the previous lab, you designed a common-emitter (CE) amplifier. Voltage gain (AV) is easy to achieve with this type of amplifier. As you discovered, the input impedance (Rin) of the CE amplifier is moderate- to-high (on the order of a few kΩ). The output impedance (Rout) is high (roughly the value of RC). This makes the common-emitter amplifier a poor choice for “driving” small loads. A common-collector (CC) amplifier typically has a high input impedance (typically in the hundred kΩ range) and a very low output impedance (on the order of 1Ω or 10Ω). This makes the common- collector amplifier excellent for “driving” small loads. As you discovered in Lab 6, the common-collector amplifier has a voltage gain of about 1, or unity gain. The common-collector amplifier is considered a voltage-buffer since the voltage gain is unity. The voltage signal applied at the input will be duplicated at the output; for this reason, the common-collector amplifier is typically called an emitter-follow amplifier. The common-collector amplifier can be thought of as a current amplifier. When the common-emitter amplifier is cascaded to a common-collector amplifier, the CC amplifier can be thought of as an “impedance transformer.” It can take the high output impedance of the CE amplifier and “transform” it to a low output impedance capable of driving small loads. Figure 1 shows a typical configuration for a common-collector amplifier. -
Fundamentals of MOSFET and IGBT Gate Driver Circuits
Application Report SLUA618A–March 2017–Revised October 2018 Fundamentals of MOSFET and IGBT Gate Driver Circuits Laszlo Balogh ABSTRACT The main purpose of this application report is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design challenges. Therefore, it should be of interest to power electronics engineers at all levels of experience. The most popular circuit solutions and their performance are analyzed, including the effect of parasitic components, transient and extreme operating conditions. The discussion builds from simple to more complex problems starting with an overview of MOSFET technology and switching operation. Design procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated solutions are described in great details. A special section deals with the gate drive requirements of the MOSFETs in synchronous rectifier applications. For more information, see the Overview for MOSFET and IGBT Gate Drivers product page. Several, step-by-step numerical design examples complement the application report. This document is also available in Chinese: MOSFET 和 IGBT 栅极驱动器电路的基本原理 Contents 1 Introduction ................................................................................................................... 2 2 MOSFET Technology ...................................................................................................... -
BJT Small-Signal Model
EE105 – Fall 2014 Microelectronic Devices and Circuits Prof. Ming C. Wu [email protected] 511 Sutardja Dai Hall (SDH) Lecture12-Small Signal Model-BJT 1 Introduction to Amplifiers • Amplifiers: transistors biased in the flat-part of the i-v curves – BJT: forward-active region – MOSFET: saturation region • In these regions, transistors can provide high voltage, current and power gains • Bias is provided to stabilize the operating point (the Q-Point) in the desired region of operation • Q-point also determines – Small-signal parameters of transistor – Voltage gain, input resistance, output resistance – Maximum input and output signal amplitudes – Power consumption Lecture12-Small Signal Model-BJT 2 1 Transistor Amplifiers BJT Amplifier Concept The BJT is biased in the active region by dc voltage source VBE. e.g., Q-point is set at (IC, VCE) = (1.5 mA, 5 V) with IB = 15 µA (βF = 100) Total base-emitter voltage is: vBE = VBE + vbe Collector-emitter voltage is: vCE = VCC – iCRC This is the load line equation. Lecture12-Small Signal Model-BJT 3 Transistor Amplifiers BJT Amplifier (cont.) If changes in operating currents and voltages are small enough, then iC and vCE waveforms are undistorted replicas of the input signal. A small voltage change at the base causes a large voltage change at collector. Voltage gain is given by: o Vce 1.65∠180 o Av = = o = 206∠180 = −206 8 mV peak change in vBE gives 5 mA Vbe 0.008∠0 change in iB and 0.5 mA change in iC. Minus sign indicates 180o phase 0.5 mA change in iC produces a 1.65 shift between the input and output V change in vCE . -
Using Embedded Resistor Emulation and Trimming to Demonstrate Measurement Methods and Associated Engineering Model Development*
IJEE 1830 Int. J. Engng Ed. Vol. 22, No. 1, pp. 000±000, 2006 0949-149X/91 $3.00+0.00 Printed in Great Britain. # 2006 TEMPUS Publications. Using Embedded Resistor Emulation and Trimming to Demonstrate Measurement Methods and Associated Engineering Model Development* PHILLIP A.M.SANDBORN AND PETER A.SANDBORN CALCE Electronic Products and Systems Center, Department of Mechanical Engineering, University of Maryland, College Park, MD, USA.E-mail: [email protected] Embedded resistors are planar resistors that are fabricated inside printed circuit boards and used as an alternative to discrete resistor components that are mounted on the surface of the boards.The successful use of embedded resistors in many applications requires that the resistors be trimmed to required design values prior to lamination into printed circuit boards.This paper describes a simple emulation approach utilizing conductive paper that can be used to characterize embedded resistor operation and experimentally optimize resistor trimming patterns.We also describe a hierarchy of simple modeling approaches appropriate to both college engineering students and pre-college students that can be verified with the experimental results, and used to extend the experimental trimming analysis.The methodology described in this paper is a simple and effective approach for demonstrating a combination of measurement methods, uncertainty analysis, and associated engineering model development. Keywords: embedded resistors; embedded passives; trimming INTRODUCTION process that starts with a layer pair that is pre- coated with resistive material that is selectively EMBEDDING PASSIVE components (capaci- removed to create the resistors.The layer contain- tors, resistors, and possibly inductors) within ing the resistor is laminated together with other printed circuit boards is one of a series of technol- layers to make the finished printed circuit board.