JULY 2015 VOL. 22, NO. 3 ISSN: 1074 1879 EDITOR-IN-CHIEF: M.K. RADHAKRISHNAN
TABLE OF CONTENTS TECHNICAL BRIEFS ...... 1 T ECHNICAL B RIEFS • Reliability Trends of Nano-scaled CMOS Devices • Report on 2015 IEEE International Reliability Physics Symposium • Wide Bandgap Semiconductors, They’re Special RELIABILITY TRENDS OF UPCOMING TECHNICAL MEETINGS ...... 10 • 2015 IEEE International Integrated Reliability NANO-SCALED CMOS DEVICES Workshop (IIRW) • 2015 IEEE Compound Semiconductor IC GUIDO GROESENEKEN Symposium (CSICS) IMEC AND KU LEUVEN, BELGIUM • 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) SOCIETY NEWS ...... 13 With the continuous downscaling of CMOS technologies, reliability • EDS Vision and Mission Statements is more and more becoming a major bottleneck and this for several • EDS President’s Message reasons. First of all the electric fields and current and power densi- • Message from EDS Vice President of Regions/ Chapters ties have increased continuously and are now reaching the maxi- • Message from Newsletter Editor-in-Chief mum values that can be allowed for reliable operation. At the same • EDS Governance Meeting Summary time an impressive effort is taking place introducing new materi- • Call for EDS Board of Governors Nominations • EDS Board of Governors Election Process als and novel device architectures to maintain the effective perfor- • IEEE Election Reminder mance scaling. New materials like high k dielectrics and metal gates • EDS Compound Semiconductor Devices and for both logic and memory technologies and novel device concepts Circuits Technical Committee Report • 2015 William R. Cherry Award Winner such as Multiple gate FET’s have already been introduced, while Ge • 42nd Photovoltaic Specialists Conference (PVSC) or III-V materials for high mobility devices are under investigation. Young Professional Award These new materials and devices often have unknown reliability • Congratulations to the EDS Members Recently Elected to IEEE Senior Member Grade behavior and/or introduce new failure mechanisms, whereas their • Enhance Your Career with IEEE Senior Membership speed of introduction exceeds the capabilities to explore their reli- • EDS Guidelines for Distinguished Lectures and ability performance in great detail. Finally, the market is continu- Mini-Colloquia Programs • EDS Chapter Subsidies for 2016 ously demanding higher reliability levels, with single digit failure • IEEE Bring Your Daughters and Sons to Work Day rates in FIT units (1 FIT = 1 failure per 109 operating device hours) • 2015 EDS Award Winners and 2016 Call for Nominations for present technologies. In the past, the technological reliability margins that were available to achieve the required failure rate YOUNG PROFESSIONALS ...... 29 levels were always sufficiently high, but in some of the technolo- • Reflections from EDS Young Professionals • IEEE Young Professionals—An Exciting New gies under development this becomes more and more cumber- Rebranded Outlook some. In this technical note we review the evolution of reliability • Register Now for Upcoming EDS Webinars! for nanoscaled technologies, and we show that for some failure • New Webinars Available in the Archive • EDS-ETC Report mechanisms the lifetime can no longer be guaranteed. As a result CHAPTER NEWS ...... 34 alternative ways of reliability assurance will become necessary. • WIMNACT 45—IEEE EDS Mini-Colloquium— As an example of the trends in the electric fields existing in the Yokohama transistors under operating conditions, Fig. 1 shows the evolution • WIMNACT 46—IEEE EDS Mini-Colloquium— Shenzhen over the past 40 years of the oxide and silicon fields as a function • IEEE ED NIST Student Chapter’s 4th Mini-Colloquium of the gate length [1]. • IEEE ED Delhi Chapter’s Mini-Colloquium on Compact Modeling Techniques (continued on page 3) REGIONAL NEWS ...... 37 EDS MEETINGS CALENDAR ...... 48 YOUR COMMENTS SOLICITED Your comments are most welcome. Please write directly to the Editor-in-Chief of the Newsletter at [email protected] ELECTRON DEVICES NEWSLETTER SOCIETY EDITORIAL STAFF
President Vice President of Publications Editor-In-Chief Albert Z.H. Wang and Products M.K. Radhakrishnan University of California, Riverside Bin Zhao NanoRel E-mail: [email protected] Fairchild Semiconductor E-mail: [email protected] E-mail: [email protected] President-Elect Samar Saha Vice-President of Regions/ REGIONS 1-6, 7 & 9 UK, Middle East & Africa Ultrasolar Technology Chapters Eastern, Northeastern & South- Jonathan Terry E-mail: [email protected] Xing Zhou eastern USA (Regions 1,2 & 3) The University of Edinburgh Nanyang Technological University Mukta Farooq E-mail: [email protected] Treasurer E-mail: [email protected] IBM Systems and Technology Ravi M. Todi E-mail: [email protected] Western Europe Qualcomm Technologies, Inc. Vice President of Technical Jan Vobecky E-mail: [email protected] Committees & Meetings Central USA & Canada Abb Switzerland Ltd. Leda Lunardi (Regions 4 & 7) E-mail: [email protected] North Carolina State University Karim S. Karim Secretary University of Waterloo E-mail: [email protected] REGION 10 Fernando Guarin E-mail: [email protected] IBM Microelectronics Australia, New Zealand & South East Asia E-mail: [email protected] IEEE Newsletters Southwestern & Western USA Theresa Smith P Susthitha Menon (Regions 5 & 6) Universiti Kebangsaan Jr. Past President IEEE Operations Center Adam M. Conway E-mail: [email protected] Malaysia Paul K.L. Yu Lawrence Livermore Nat. Lab. E-mail: [email protected] University of California at San Diego E-mail: [email protected] E-mail: [email protected] Executive Director Christopher Jannuzzi Latin America (Region 9) Northeast Asia Joao Antonio Martino Kuniyuki Kakushima Sr. Past President IEEE Operations Center University of Sao Paulo Tokyo Institute of Technology Renuka P. Jindal E-mail: [email protected] E-mail: [email protected] E-mail: [email protected]. University of Louisiana at ac.jp Lafayette Membership Administrator E-mail: [email protected] Joyce Lombardini REGION 8 East Asia IEEE Operations Center Eastern Europe Mansun J. Chan E-mail: [email protected] Daniel Tomaszewski Vice President of Membership Institute of Electron Technology Hong Kong Univ. of Sc. & Tech. and Services E-mail: [email protected] E-mail: [email protected] Mikael Ostling KTH, Royal Institute of Technology Scandinavia & Central Europe South Asia E-mail: [email protected] Mariusz Orlikowski Manoj Saxena Lodz University of Technology University of Delhi E-mail: [email protected] E-mail: [email protected]
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2 IEEE Electron Devices Society Newsletter ❍ July 2015 RELIABILITY TRENDS OF NANO-SCALED CMOS DEVICES
(continued from page 1)
Clearly 3 periods can be distin- guished: a first constant voltage scaling period in the seventies and 1.0E+07 Eox eighties, in which the power supply voltage was not reduced when scal- Esi ing the geometries, and consequent- 1.0E+06 ly the fields increased continuously with scaling. This was followed by a more or less constant field scaling pe- riod, in which the power supply volt- 1.0E+05 ages were reduced with every new technology node, so that the fields Electric field (V/cm) saturated at a certain plateau. Since 1.0E+04 the 65 nm node, however, the power supply voltages are saturating at a level around 1 V, and can no further be reduced because of the non-scal- 1.0E+03 ing sub-threshold slopes of the MOS- 10.00 1.00 0.10 0.01 FET’s. As a result we observe again a Gate length (um) further increase in the electric fields, which starts to put new constraints on the reliability of the devices. More- Fig. 1. Evolution of oxide and silicon electric fields showing 3 different scaling scenario periods [1] over, the power density has also con- tinuously increased, which leads to higher chip temperatures, and conse- 1.6 quently even a stronger acceleration 10.0 of the degradation mechanisms. All 1.4 8.0 of this leads to a strong reduction of 6.0 the reliability margins for most fail- 1.2 4.0 ure mechanisms. 2.0 Until now, reliability assessment 1.0 0.0 and assurance was mainly carried 0.0 1.0 2.0 Eox at 10 yrs [MV/cm] EOT [nm] out at the technology level, through 0.8 ITRS accelerated testing for each major 0.6 failure mechanism. Accelerated test methodologies and models have 0.4 been developed and are available for 5 MV/cm Voltage over-drive at 10 yrs [V] most failure mechanisms such as hot 0.2 carrier degradation, Time-Dependent Dielectric Breakdown, Bias- Tempera- 0.0 ture Instability (BTI)], electromigra- 0.0 1.0 2.0 tion, stress voiding, interconnect EOT [nm] dielectric instability and breakdown. Due to the trends discussed above, however, reliability margins of these Fig. 2. Evolution of p-MOSFET NBTI over-drive voltage at 10 years. ITRS roadmap data is also added. [2] failure mechanisms are reduced, in some cases even to zero. As an ex- ample, Figure 2 shows the 10 year This figure shows that the ex- expected NBTI overdrive versus EOT over-drive voltage to be decreasing trapolated gate overdrive at 10 year is shown by the dotted iso-electric with reducing EOT [2]. is linearly dependent on EOT. The field line of 5 MV/cm. However, it
July 2015 ❍ IEEE Electron Devices Society Newsletter 3 ing statistical variability of the deg- radation effects, comparable to the 1 well-known increasing variability of the initial parameters. Until now, the Si0.45Ge0.55 large, micrometer-sized FET devices 0.8 of the past CMOS technologies were considered identical in terms of elec- trical performance. Similarly, the ap- 0.6 plication of a given stress resulted in HKL Thick Si cap an identical parameter shift in all de- vices. With the gradual downscaling HKF Thick Si cap 0.4 Si of the FET devices the oxide dielec- HKF NBTI optimized tric was the first to reach nanometer Maximum |VG-Vth| [V] dimensions, thus introducing the MIPS thick Si cap, thin IL 0.2 first stochastically distributed reli- MIPS NBTI optimized ability mechanism—the Time Depen- dent Dielectric Breakdown. With the shrinking of lateral device dimen- 0 46810 12 14 16 18 sions to sub-22 nm levels, variations between devices start to appear due T (≈EOT+4Å) [Å] inv to effects such as random dopant fluctuations and line edge rough- ness [7, 8]. Similarly, application of a Fig. 3. Optimized SiGe devices boost the maximum operating overdrive to meet the target fixed stress in such devices results in VDD at ultra-thin EOT. a distribution of the parameter shifts [9, 10]. Understanding these distri- is clearly observed that below 1 nm boost the performance by their high- butions is crucial for correctly pre- EOT the NBTI degradation is faster er mobility, but also promise a signif- dicting the reliability of future deeply than expected. The extrapolated icantly improved NBTI robustness, downscaled technologies [11]. operating field at 10 year lifetime is as is illustrated on Fig. 3. To benefit In such deeply downscaled CMOS plotted versus the EOT in the inset in from this property, the SiGe quan- technologies only a handful of de- Figure 2. Conversely to ITRS specifi- tum well devices were optimized fects is present in each device, while cations, the devices below 1 nm EOT for enhanced reliability, including their relative impact on the device show a rapid decrease in the maxi- a high Ge fraction in the channel, a characteristics is significant. The be- mum operating field. The strong sufficiently thick quantum well and a havior of these defects is stochastic, electric field dependence change Si passivation layer of reduced thick- voltage and temperature depend- below 1 nm suggests a different or ness [3, 4]. By means of such optimi- ent, and widely distributed in time, additional NBTI degradation mecha- zation, sufficiently reliable ultra-thin resulting in each device behaving nism in the sub 1-nanometer EOT re- EOT SiGe pMOSFETs with a 10 year very differently during operation. gime. We have found the additional lifetime at operating conditions in Fig. 4 shows a typical result of a mechanism for this severe degrada- both gate-first and gate-last process Measure-Stress-Measure (MSM) tion in sub-nanometer EOT devices flows were demonstrated, as shown measurement of a relaxation tran- to be the increased bulk charge trap- on Fig. 3 [5]. sient following NBTI (Negative-Bias- ping effect enhanced by the reduced Nevertheless because of such Temperature Instability) stress. Clear interfacial layer [2]. This means that reduced reliability margins in the steps caused by single discharge it will become more and more diffi- future we will have to learn to de- events are visible in the NBTI re- cult to guarantee the lifetime of the sign reliable circuits with unreliable laxation transients. For larger device transistors as it was done before us- components. Interaction with the sizes these relaxation transients are ing the classical accelerated testing design community to fine-tune the continuous and spread over several approaches. lifetime assessment and using real- decades in time. In this case, howev- There are some technology solu- istic circuit-based failure criteria be- er, the average step height is signifi- tions available for the dramatic re- comes mandatory [6]. cantly larger than reported earlier. duction in BTI lifetime. One of them On top of this trend another one It is important to note here that the is the use of SiGe-based devices, is observed in reliability assess- steps corresponding to a single which are not only investigated to ment, namely the impact of increas- discharging event in some devices
4 IEEE Electron Devices Society Newsletter ❍ July 2015 exceed 30 mV, the BTI lifetime crite- rion presently used by most groups, 50 which means that 1 single charge 90 x 35 nm2, 12x devices can cause threshold voltage shifts as Si0.45Ge0.55/Si cap 2 nm high as the failure criterion. The his- 40 togram of the step heights is shown on Fig. 4b. This trend leads to a shift in our 30 [mV] perception of reliability: the “top- th down” approach (deducing the mi- – Δ V croscopic mechanisms of average 20 degradation in large devices) is be- ing replaced in deeply-scaled devic- es by the “bottom-up” approach, in 10 T = 25°C; t = 132s which the time-dependent variability stress V = –2V;
th th scales inversely with device area but i 0.01 0510 15 20 is expected to improve with lower (b) Single charge –ΔV [mV] channel doping concentrations. The th knowledge of single defect impact distribution, combined with the as- Fig. 4. (a) NBTI relaxation transients recorded on nanoscaled SiGe devices. (b) Weighted sumption of Poisson-distributed complementary Cumulative Distribution Function (CCDF) plot of the individual ∆VTH step heights observed on multiple devices. The average number of defects per device, N , can be easily read number of defects per device, allows G T H predicting the distribution of the in this plot as the intersection of the distribution with the y-axis [11]. total degradation per device [12,13] and projecting the fraction of failing –15 devices at 10 years, as is shown on 8 1-10 Fig. 5 [11]. This figure clearly shows 6 1-10–9 the trend: for large area devices, like ) in the past, all devices behave iden- T 4 0.99999 Fraction tical and have one single predicted , N 0.999 maximum overdrive voltage. But for 2 0.9 nanoscaled devices, although the ΔVTH = 30 mV at 10 years
Probit (H 0.5 median of the devices has the same 0 A = 35 x 90 nm2 0.1 maximum overdrive as the large 5 x A –2 10 x A 0.01 area devices, there is a huge tail to- 1000 x A wards lower maximum overdrives. 0.0001 –4 2 345 67 2 This poses new challenges on the 0.1 1 reliability assessment and assurance VG-VTH (V) of such nanoscaled technologies. In conclusion, it is generally ac- Fig. 5. Predicted 10 years maximum overdrive cumulative distributions of the pFET for ∆Vth = cepted that reliability margins as- 30 mV at trelax =1 ms for various device area. The median overdrive is independent of device sessed using the classical method area, but a significant fraction exceeds failure criteria at lower overdrives as the device area are rapidly vanishing. This becomes decreases [11]. more critical when in the near future the use of high-mobility channels performance enhancement in future III-V based quantum well devices are will be considered for further device CMOS technology nodes. (Si)Ge and the first candidates for p- and n-type
July 2015 ❍ IEEE Electron Devices Society Newsletter 5 channels, respectively. Although [2] M. Cho, J-D Lee, M. Aoulaiche, U. Kovac, “Advanced simulation of promising drive current perfor- B. Kaczer, P. Roussel, T. Kauerauf, statistical variability and reliability mance has been reported for these R. Degraeve, J. Franco, L. Ragnarsson, in nano CMOS transistors”, IEEE Tech devices by several groups, much G. Groeseneken, “Insight Into N/ Digest International Electron Device less information on their reliability is PBTI Mechanisms in Sub-1-nm-EOT Meeting (IEDM), p. 421, 2008. available. Nevertheless, it is manda- Devices”, IEEE Trans El. Dev. Vol 59, [9] S. E. Rauch, “Review and re- tory that, besides good performance p. 2042, 2012. examination of reliability effects and mobility, also sufficient reliabil- [3] J. Franco, B. Kaczer, M.J. Cho, related to NBTI-induced statistical ity can be guaranteed before these G. Eneman, T. Grasser and G. Gro- variations”, IEEE Trans. Dev. Mat. Rel., Beyond-Silicon devices can be con- eseneken, “Improvements of NBTI p. 524, 2007. sidered for production. reliability in SiGe p-FETs”, in Proc. [10] V. Huard C. Parthasarathy, C. Next to this, the increasing sys- IEEE IRPS, pp. 1082–1085, 2010. Guerin, T. Valentin, E. Pion, M. Mam- tematic and statistical variability [4] J. Franco, B. Kaczer, G. Ene- masse, N. Planes, L. Camus, “NBTI caused by the stochastic nature of man, J. Mitard, A. Stesmans, V. degradation: from transistor to the failure mechanisms will have to Afanas’ev, T. Kauerauf, Ph.J. Rous- SRAM arrays” Proceedings IEEE In- be considered in the design of future sel, M. Toledano-Luque, M. Cho, R. ternational Reliability Physics Sym- ULSI circuits. To that end, the time Degraeve, T. Grasser, L.-Å. Ragnars- posium., p. 289, 2008. dependence of the parameter dis- son, L. Witters, J. Tseng, S. Takeoka, [11] M. Toledano-Luque, B. Kaczer, tributions during circuit operation, W.-E. Wang, T.Y. Hoffmann and G. Gr- J. Franco, Ph.J. Roussel, T. Grasser, after being thoroughly understood, oeseneken,. “6Å EOT Si0.45Ge0.55 T.Y. Hoffmann, and G. Groeseneken, will need to be inserted into circuit pMOSFET with Optimized Reliability “From mean values to distributions simulators. Recent work has shown (VDD = 1V): Meeting the NBTI Lifetime of BTI lifetime of deeply scaled FETs very strong workload-dependent Target at Ultra-Thin EOT, in Proc. through atomistic understanding of characteristics in the aging of scaled IEDM, pp. 70–73, 2010; the degradation”, IEEE VLSI Technology devices and wires. As a result a need [5] J. Franco, B. Kaczer, M. Symposium Tech Dig., p. 152–153, 2011. has emerged for mixed statistical- Toledano-Luque, Ph.J. Roussel, J. [12] B. Kaczer, T. Grasser, Ph. J. deterministic modeling approaches Mitard, L.-Å. Ragnarsson, L. Witters, Roussel, J. Franco, R. Degraeve, [6] as opposed to the early worst- T. Chiarella, M. Togo, N. Horiguchi, L.-A. Ragnarsson, E. Simoen, G. case modeling or more recent statis- G. Groeseneken, M.F. Bukhori, T. Groeseneken, H. Reisinger, “Origin tical modeling options. Grasser and A. Asenov, “Impact of of NBTI variability in deeply scaled Reliability assessment of future single charged gate oxide defects pFETS’s”, Proceedings IEEE Interna- applications can thus be seen as on the performance and scaling of tional Reliability Physics Symposi- time-dependent variability analy- nanoscaled FETs”, Proceedings IEEE um, p. 26, 2010. sis. All this will ultimately lead to a International Reliability Physics [13] B. Kaczer, Ph. J. Roussel, T. paradigm shift in the reliability as- Symposium., p. 5A.4.1–6, 2012. Grasser and G. Groeseneken, “Sta- sessment and assurance of future [6] D. Rodopoulos, S. Mahato, V. tistics of multiple trapped charges technologies, circuits and systems, Valduga de Almeida Camargo, B. in the gate oxide of deeply-scaled which will have to be guaranteed Kaczer, F. Catthoor, S. Cosemans, G. MOSFET devices—application to at the system design level rather Groeseneken, A. Papanicolaou and NBTI”, IEEE Electron Device Letters, than at the device and technol- D. Soudris,,”Time and Workload De- vol. 31, p. 411–413, 2010. ogy level. Research is underway to pendent Device Variability in Circuit [14] B. Kaczer, J. Franco, M. develop such reliability-aware de- Simulations”, Proceedings of the Toledano-Luque, Ph. J. Roussel, M. F. sign methodologies [15] which will IEEE International Conference on Bukhori, A. Asenov, B. Schwarz, M. change the operation conditions of IC Design and Technology (ICIDT), Bina,T. Grasser and G. Groeseneken, the critical transistors during run- p. 978-1-4244-9021-9/11, May 2011. “The relevance of deeply-scaled time. [7] A. Asenov, “Random dopant FET threshold voltage shifts for op- induced threshold voltage lowering eration lifetimes”, Proceedings IEEE References and fluctuations in sub-0.1 mu m International Reliability Physics [1] G. Groeseneken, R. Degraeve, MOSFET’s: A 3-D “atomistic” simu- Symposium., p. 5.A.2.1–6, 2012. B. Kaczer and K. Martens L, “Trends lation study”, IEEE Trans. El. Dev., vol. [15] S. Hamdioui, D. Gizopoulos, and perspectives for electrical 45, p. 2505, 1998. G. Groeseneken, M. Nicolaidis, A. characterization and reliability as- [8] A. Asenov, S. Roy, R.A. Brown, Grasset and P. Bonnot, “Reliability sessment in advanced CMOS tech- G. Roy, C. Alexander, C. Riddet, C. challenges of real-time systems in nologies”, Proceedings ESSDERC Millar, B. Cheng, A. Martinez, N. Seo- forthcoming technology nodes”, De- conference 2010, p. 64–72, 2010. ane, D. Reid, M.F. Bukhori, X. Wang, sign, Automation & Test in Europe
6 IEEE Electron Devices Society Newsletter ❍ July 2015 Conference & Exhibition—DATE, non-volatile semiconductor memory power devices. He has served as a Proceedings pp.129–134, 2013. devices and technology, reliability technical program committee mem- physics of VLSI-technology, hot carri- ber of several international scientific Guido Groeseneken er effects in MOSFET’s, time-depend- conferences, IEDM, IRPS, IEEE SISC, is an IMEC Fellow and ent dielectric breakdown of oxides, European Solid State Device Re- Professor at the KU Negative-Bias-Temperature Insta- search Conference (ESSDERC) and in Leuven, Belgium, bility effects, ESD-protection and— the EOS/ESD Symposium. From 2000 where he is Program testing, plasma processing induced until 2002 he also acted as European Director of European damage, electrical characterization of Arrangements Chair of IEDM. He Guido Erasmus Mundus semiconductors and characterization was the General Chair of the Insulat- Groeseneken Master program in and reliability of high k dielectrics. ing Films on Semiconductor (INFOS) Nanoscience and nanotechnology. Recently he has also interest in nano- conference in 2005. From 1999 until He is responsible for research in re- technology for post-CMOS applica- 2006 he was an editor of IEEE Trans- liability physics for deep submicron tions, such as carbon nanotubes for actions on Electron Devices. Since CMOS technologies at IMEC and has interconnect and sensor applications, January 2005 he is elected to the made contributions to the fields of tunnel FET’s for alternative ultra-low grade of IEEE Fellow.
REPORT ON 2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM
The IRPS15 held from April 19–23, for a dramatic performance changes on the continued advancement of 2015, at the Hyatt Regency Monterey to ready 1 TB/s bandwidth, reduced Moore’s Law with several 14 nm and Resort and Spa, Monterey, California, energy consumption of 5mW/ many FIN- FET papers from indus- USA, serendipitously kicked off exact- GB/s, and x-scale computing of 1018 try leaders. The technical program ly on the 50th anniversary of Moore’s Flops/s. A radical rethinking of DRAM kicked off with a first-ever combined Law on April 19th which was recog- design to utilize tightly stacked mem- gate dielectrics and back-end-of-line nized in IEEE Spectrum’s April publi- ory in through silicon vias (TSV) cou- (BEOL) breakdown session which cation. The key question with respect pled with a logic layer to manage the was highly attended. As dimensions to reliability—can Moore’s Law con- memory and communications with have been scaled continuously, new tinue and not be limited by reliability? the host which included reliability, considerations for interconnect di- IRPS15 technical program kicked off availability, and serviceability (RAS) electric breakdown must be made with keynotes by Kaizad Mistry of In- features. These keynotes provided in addition to traditional electro- tel and Brent Keeth of Micron respec- excellent introduction to the technical migration reliability. Wednesday‘s tively addressing these topics. program and substantial motivation evening poster session, in the Mon- Kaizad Mistry illustrated Den- towards continual enabling of reli- terey Grand Ballroom, featured over nard’s classical scaling which was ability aspects of Moore’s Law! seventy-five poster presentations applicable through the late 1990’s IRPS15 technical program fea- accompanied by delicious dinner and how a “golden age of innova- tured reliability topics focusing selections. Conference proceedings tion” was occurring with advent of strained silicon, high-K metal gate, and tri-gate (fin-fet) introduction in the 21st century. Improvements in reliability mode data of time depen- dent dielectric breakdown (TDDB), bias temperature instability (BTI), and soft error were reviewed. Brent Keeth presented dynamic random access memory (DRAM) per- formance and scaling, citing the need Kaizad Mistry, VP Intel, delivering keynote “Transistors and Reliability in the Innovation Era.”
July 2015 ❍ IEEE Electron Devices Society Newsletter 7 HMC reliability
Built-in RAS features at a high level
Logic stability Reliable handshake (DRAM controls in logic) DRAM Array (packet integrity verified before memory access) Logic / Interface DRAM Array DRAM Array
Logic / Interface Logic / Interface Vault data ECC-protected Host Link retry CRC protection on link interface Logic / Interface Address/Command parity DRAM Array for array transactions
Brent Keeth, Senior Fellow Micron, delivering keynote “Hybrid Memory Cube (HMC): Achieving High Performance and High Reliability” and Hybrid Memory Cube built in reliability, availability, and serviceability (RAS) features (courtesy Brent Keeth, Micron).
are available in the IEEE Xplore Digi- Bias temperature reliability scaling tal Library. The “best of IRPS15” will be announced on Twitter. NMOS - PBTI PMOS - NBTI The next IRPS will be held in Pas- 30 30 adena, California, April 17–21, 2016. SiON + Poly Call For Papers have been issued 25 25 Tri- Gate with an abstract deadline of Octo- 22 nm 20 20 SiON + Poly ber 12, 2015, and late news submis- Hi-k 14 nm 15 15 sions due January 11, 2016. Please 65 nm Tri- follow on Facebook, Linked-IN, dVt [mV] 32 nm dVt [mV] 10 Gate 10 Hi-k Twitter @IEEEIRPS, and visit http:// 65 nm 22 nm 5 5 32 nm IRPS.org for latest information. 45 nm 45 nm 0 14 nm 0 The Device Reliability team looks 510 15 57911 13 forward to seeing you in Pasadena Field [MV/cm] Field [MV/cm] for IRPS16!
Both PBTI and NBTI dramatically better than SiON + Poly Chris Connor, Yuan Chen and Giuseppe LaRosa BTI reliability scaling by process generation showing effectiveness of innovation in making 2015 IRPS Publicity, Technical improvements in reliability with scaling (courtesy Kaizad Mistry, Intel). Program and General Chairs
WIDE BANDGAP SEMICONDUCTORS, THEY’RE SPECIAL
Recent advances in wide band gap IEDM invited plenary speech by J.W. sentation included an unusual testi- semiconductors (typically com- Palmour of Cree, showed impressive monial for widegap semiconductors. pound, like Gallium Nitride (GaN) data on the yield and performances US President Barack Obama himself and Silicon Carbide (SiC), but also of SiC devices on 15 cm substrates— in a speech held at NCSU on January elementary, like Diamond) for pow- micro-pipes still are a threat but their 15, 2014, supporting a $140 million er applications were a big hit dur- density has decreased so much that proposal to bring a manufactur- ing the IEDM 2014 conference. The yield is almost unaffected. The pre- ing innovation hub to Raleigh, with
8 IEEE Electron Devices Society Newsletter ❍ July 2015 Jayant Baliga as a principal investi- technologies for power switching is power solution, having in mind gator. “Wide bandgap semiconduc- discussed, by researchers from Infi- a target price of 0.1 $/A at 40 KHz tors, they’re special because they neon. In a nutshell, Si still dominates switching frequency. Contrary to use up to 90 percent less power; for low price applications, SiC for common belief, the SiC solution is they can operate at higher tempera- high-end, high voltage applications, not necessarily more expensive than tures than normal semiconductors. GaN (but only in the GaN-on-Si va- the Si one—the cost is higher but So that means they can make every- riety) for high-end and medium volt- also the power density is larger. For thing from cell phones to industrial age applications. GaN-on-GaN vertical devices, the motors to electric cars smaller, fast- Widegap power semiconductor current solutions are monothermal er, cheaper. There are still going to be devices will also play a fundamental GaN boules or GaN transferred sub- applications for traditional semicon- role in smart power grids. SiC de- strates obtained by epitaxial lift-off. ductors, but these can be focused on vices with ultrahigh breakdown volt- A last area of interest is diamond certain areas that will vastly improve age (>10 kV) for UHV applications in power electronics, for which the energy efficiency, vastly improve the power grids (researchers from Kyoto main challenge remains n-type dop- quality of our lives.” See the tran- University, AIST and Kansai Electric ing in bipolar diodes and transis- script of Barack Obama’s speech, Power). An optimized PiN SiC pro- tors. A possible solution for power http://www.bizjournals.com/triangle/ cess is described with high tempera- diamond devices avoiding the is- transcript-of-president-obamas- ture performances up to 250 C and sues related to doping is the surface speech.html?page=all . 70% expected power reduction ex- H-termination (already proposed As pointed out by Prof. Baliga pected vs. Si converters operating at about 20 years back), that induces in the invited paper Social Impact a switching frequency of 2 kHz. a surface 2D hole gas, allowing for of Power Semiconductor Devices, GaN has become widespread in the development of diamond-based those play a fundamental role in a our homes thanks to the introduc- MESFETs and MOSFETs. Very good sustainable society and involve an tion of GaN-based LED high-efficien- results in terms of stability and high- impressive range of applications, cy lighting (as recognized by the re- voltage operation were presented from transportation to air condition- cent Nobel prize in physics to Isamu by Waseda University researchers. ing and refrigeration to lighting. Akasaki, Hiroshi Amano and Shuji The technology exploited here is a Two-digit improvements in efficien- Nakamura), but very soon domestic MOSFET with an Al2O3 layer. The cy have led, during the last 20 years, appliances exploiting GaN power proposed process also has good to staggering results in terms of devices will become widespread, at properties in terms of high-temper- energy consumption and decrease least in Japan. PV conditioners us- ature behavior up to 400 C. in carbon dioxide emissions. ing 600 V GaN-on-Si devices will be IEDM 2014 had sessions where Cars are one of the major sourc- sold on the Japanese market starting many technological developments es of carbon dioxide emission and January 2015. The PV conditioner ex- were reported, and the contribution 93.5% of the energy used for trans- ploits a JEDEC-qualified GaN-on-Si of the session invited speakers well portation is based on fossil fuels. process using a cascode configura- summarized the contents of the This could be improved in the future tion with a normally-off Si MOSFET. sessions: Dr. Tetsu Ueda, from Pana- with a more widespread use of Hy- The 1500 V breakdown voltages sonic reported on the potential of brid Electrical Vehicles (HEV) and ensures reliability in the targeted the GaN HEMTs in the power switch- EVs. Researchers from Toyota Cen- 600 V application, with a 40% loss ing applications. Prof. Gaudenzio tral R&D Labs presented a novel SiC reduction and size reduction when Meneghesso, from the University of vertical JFET for automotive applica- compared to a Si implementation; Padova, provided an important over- tions, allowing for a 50% reduction the switching frequency is 27 MHz view of the most critical parasitic of switching losses vs. conventional and careful packaging alleviates effects today present in these devic- MOSFETs. Despite their impressive EMI problems. In the future, 900 V e- es that need to be taken care of, to performances, widegap semicon- mode devices will be on the market. allow for a large market penetration. ductor power devices based on SiC Bulk GaN substrates could be the or GaN should be targeted towards ultimate solution for GaN electron- Giovanni Ghione specific applications where they ics, in particular for vertical devices. Politecnico di Torino bring real advantages in terms of Researchers from the Advanced performance but also cost vs. Si. A Research Projects Agency show Gaudenzio Meneghesso complex SWAT analysis of different an overview of available widegap University of Padova
July 2015 ❍ IEEE Electron Devices Society Newsletter 9 U PCOMING T ECHNICAL M EETINGS
2015 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW)
The 2015 IEEE International Inte- grated Reliability Workshop (IIRW), sponsored by the IEEE Reliability Society and the IEEE Electron De- vices Society, will be held at the Stanford Sierra Conference Center on the shores of Fallen Leaf Lake near South Lake Tahoe, California, October 11–15, 2015. This workshop provides a unique forum for open and frank discussions of all areas of reliability research and technology for present and future semiconduc- tor applications. Some of the highlights of this year’s technical program will include: • A keynote speech on Product Re- liability given by Prasad Chapara- la, Director, Hardware Reliability Engineering, Amazon Lab 126 View of Fallen Leaf Lake from the ski dock at the Stanford Sierra Conference Center. The Stanford • A strong collection of invited Sierra Conference Center provides lodging, meals and meeting facilities as well as excellent speakers including (but not limit- recreation including hiking in the Desolation Wilderness and boating on Fallen Leaf Lake ed to): John Conley Jr. (Oregon State University)—Dielectric and Landing Telecommunications be found at the web address (www. Stack Engineering; Christian Team, Mars Curiosity Rover, iirw.org). The abstract submission Shweta Deora (Sematech)— JPL-NASA deadline is July 12, 2015. Contact RRAM Reliability; JH Lee The IIRW is also an excellent fo- the Technical Program Chair, Rich- (TSMC)—FEOL Reliability; Sang- rum to present new and original ard Southwick ([email protected]. Woo Pae (Samsung)—FEOL technical works. Reliability topics com) for further details. Also, visit Reliability; Pieter Wechx (IMEC)— for the workshop include: SiGe and www.iirw.org for continued updates RTN and BTI time-dependent strained Si, III-V, SOI, high-k and ni- about the conference. Also note that reliability, John Robertson (Cam- trided SiO2 gate dielectrics, reliabil- all attendees have the opportunity to bridge University)—Reliability of ity assessment of novel devices, or- present a “walk-in” poster of their III-V MOSFETs ganic electronics, emerging memory latest work. This is a great way to • A strong tutorial program will technologies (RRAM etc.) and future share that new project you are work- cover many hot reliability topics “nano”-technologies, NEMS/MEMS, ing on and to get world-class feed- including (and not limited to) ra- photovoltaic’s, transistor reliabil- back. diation effects on devices includ- ity including hot carriers and NBTI/ IIRW is fairly different from a typi- ing non-volatile memories, 14 nm PBTI, Cu interconnects and low-k cal technical conference. Located node FinFET reliability, LDMOS dielectrics, product reliability and 6000 ft. high in the Sierra Nevada reliability & modeling, reliability burn-in strategy, impact of transistor Mountains, the Stanford Sierra Con- of power GaN devices, physical degradation on circuit reliability, reli- ference Center provides an ideal at- analysis of device degradation ability modeling and simulation, op- mosphere for a relaxing yet informa- (TEM, STM, CAFM etc. ). toelectronics, single event upsets, as tive workshop. Nestled throughout • On Sunday (first) night “tech well as the traditional topics of wafer the pines and cedars along the lite” presentation: Brian Schratz, level reliability (WLR) and built-in re- shoreline of Fallen Leaf Lake, attend- Lead Engineer, Entry Descent liability (BIR). The Call for Papers can ees stay in cabins furnished in the
10 IEEE Electron Devices Society Newsletter ❍ July 2015 rustic style of an alpine resort. All plemented with refreshments and great way to not only network, but cabins have decks with magnificent snacks. The evening moderated dis- also to build long-lasting friendships. views of Fallen Leaf Lake and the cussion groups provide a forum with Additional information about the surrounding Sierra peaks. Comfort- unparalleled access to world ex- workshop is available on the IIRW web- able, informal dress is encouraged, perts to discuss a wide array of rel- site at www.iirw.org, or by contacting affiliations are downplayed, and evant reliability issues. Often these Jason Ryan, NIST, 2015 IIRW General meals are provided family-style in discussions lead to the formation Chair, ([email protected]) Note: the lodge dining room. of a smaller special interest group, If you want to take part in this event, All aspects of the workshop, in- whose discussions extend long after please register early as space at the cluding the physical isolation of the the conclusion of the workshop. Stanford Sierra Conference Center is venue, the absence of distractions The technical program is pur- limited to roughly 120 attendees and such as in-room phone and televi- posely kept open for Wednesday af- the workshop has sold out in the past. sions, and the format of the techni- ternoon to allow attendees to enjoy On behalf of the 2015 IIRW Com- cal program encourage extensive a variety of the outdoor activities mittee, I look forward to meeting you interaction among the workshop at- which the Stanford Sierra Confer- in Lake Tahoe! tendees. Such opportunity is seldom ence Center location has to offer. available at most other conferences. These include hiking, sailing or kay- Barry O’Connell Participants spend their evenings at aking, walking, or simply continuing 2015 IIRW Communications Chair poster sessions, discussion groups, that intriguing conversation from the Fairchild Semiconductor and special interest groups, all com- night before. This free afternoon is a San Jose, CA, USA
2015 IEEE COMPOUND SEMICONDUCTOR IC SYMPOSIUM (CSICS)
OCTOBER 11TH–14TH IN NEW ORLEANS, LOUISIANA
The 2015 IEEE CSICS will be held on the-art results in the areas of circuit nical program includes 60–70 high October 11th–14th at the Sheraton switching speed, RF frequency of quality papers and 4 topical panel Hotel located in New Orleans, Loui- operation, RF output power, PA effi- sessions. This year, CSICS is proud siana, USA. ciency, and noise performance. The to announce 20 internationally re- The Compound Semiconductor symposium also showcases the lat- nowned invited speakers, notably: IC Symposium (CSICS) covers GaN, est advances in emerging semicon- Pascal Chavalier (ST), Jesus del Al- GaAs, InP, SiGe, and nanoscale ductor device technology, modeling amo (MIT), Eric Lind (Lund Univ.), CMOS technologies and their ap- and manufacturing. Akira Nakajima (AIST), Masataka plication to microwave/mm-wave, The symposium includes a three Higashiwaki (NICT), Thomas Zimmer THz, analog mixed signal, power day dual track technical program, (University of Bordeaux), Bruce Wal- conversion, and optoelectronic IC two short courses, a primer course, lace (DARPA), Zoya Popovic (Univer- design. Now in its 38th year, CSICS and a technology exhibition. Also, sity of Colorado, Boulder), Ian Betty has become the premier sympo- for the 2nd year, CSICS will offer a (Ciena), John Volakis (Ohio State sium at which to present state-of- student paper competition. The tech- University), Ken Brown (Raytheon),
July 2015 ❍ IEEE Electron Devices Society Newsletter 11 Patrick Courtney (Qorvo), Bill Deal valuable for anyone involved in high both CMOS and SiGe technology. (Northrop Grumman), Kazuhiko speed electronic or optoelectronic The primer is an excellent way to Honjo (The University of Electro- devices, circuit design, or systems. start the symposium and is guaran- communications, Japan), Shogo Ya- The second course, Microwave teed to enhance attendee apprecia- manaka (NEC), Takayuki Shibasaki Package Design Fundamentals, will tion of the technical program. (Fujitsu), Sam Palermo (Texas A&M), be taught by leading high speed In recognition of the exceptional Nomand Wolf (HHI), Michel Poulin packaging experts. This course will contributions made by students, (TeraXion), and Efthymios Rouvalis cover the basics of microwave pack- CSICS is proud to hold its second (Finisar). These distinguished speak- aging for high speed and high power Student Paper Competition. To par- ers will present the latest advances microwave applications. It will cover ticipate in the competition, an eli- in SiGe BiCMOS, InGaAs MOSFET’s, the packaging materials and tech- gible student must submit a regular nanowire FET devices, E-mode GaN nologies, assembly techniques, and contributed paper naming, at a mini- HEMT’s, device modelling, mm- design considerations for packaging mum, themselves and their principal wave/THz PA’s and systems, spatially high frequency microwave and mm- supervisor as authors. The Student combined PA’s, envelope tracking wave devices. It will be useful for de- Paper Finalists must present their PA’s, and low power RX and TX cir- vice, circuit, and system designers. own papers at their assigned sym- cuits and DSP’s, as well as Si and InP On Sunday evening, Waleed posium session. modulators and drivers. Khalil (Ohio State), will teach an ex- For registration and up-to-date CSICS offers two in-depth short panded Primer Course on Si RFIC information, please visit the CSICS courses on Sunday, October 11th. design. This 3.5 hour lecture is in- website at www.csics.org. Further The first course, Transmit and Re- tended for participants of all techni- questions may be addressed to the ceive IC Design for Fiber Optic Links, cal backgrounds who wish to learn Symposium Chair: Dr. Charles F. will be presented by leading ex- or refresh their understanding of Campbell, Phone: +1 972 994-3644, perts: Linh Nguyen (Finisair), Kumar the fundamentals of designing the e-mail: [email protected]. Lakshmikumar (Cisco), and Mark principal circuit building blocks in We hope you can attend, 2015 Webster (Cisco). This course details radio and radar SoCs. Among the IEEE CSICS Organizing Committee high-speed analog IC design basics blocks covered are PAs, LNAs, Mix- for electronic and optoelectronic ap- ers, VCOs, as well as integrated pas- Bruce Green plications. The course will prove in- sives, with examples drawn from CSICS 2015 Publicity Chair
2015 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM)
BOSTON HYATT, BOSTON, MA, USA WWW.IEEE-BCTM.ORG SHORT COURSE: MONDAY, OCT. 26, 2015, CONFERENCE: TUESDAY–WEDNESDAY, OCT. 27–28, 2015
and delighted to invite you to the • Guofo Niu (Auburn Universi- 2015 IEEE Bipolar/BiCMOS Circuits ty): Device Physics and Opti- and Technology Meeting (BCTM) at mization for RF Applications the Boston Hyatt, Boston, Massachu- • Colin McAndrew (Freescale): setts, October 26–28, 2015. We invite Models for RF Circuit Simula- you to participate at the 2015 BCTM tion: Capabilities and Short- where the highlights include: comings • Keynote addresses “5G Systems” • Lawrence Larson (Brown Univer- Jean-Baptiste Doug Weiser Begueret by Dr. Yukihiko Okumura of NTT sity): Design fundamentals for RF DOCOMO Transmitters and Receivers Invitation to IEEE BCTM 2015 • Day-long short-course on How to • Freek van Straaten/Henk On behalf of the IEEE BCTM’15 Ex- Make Great RF Products Using Thoonen (NXP): Packaging ecutive Committee, we are honored BiCMOS Technologies Challenges for RF
12 IEEE Electron Devices Society Newsletter ❍ July 2015 • Forward-looking Emerging Tech- The IEEE BCTM is a forum for The IEEE BCTM is the world’s pre- nologies Session with invit- technical communication focused on mier forum focused on the needs and ed speakers: Dieter Knoll (IHP) the needs and interests of the bipo- interests of the bipolar and BiCMOS on “Photonic BiCMOS technolo- lar and BiCMOS community. Papers community. If you are interested in gy” and Pascal Chevalier (STMi- covering the design, performance, leading edge bipolar/BiCMOS devices croelectronics) on “14 nm FDSOI fabrication, testing and application and technology, circuits, and applica- and HBT integration feasibility” of bipolar and BiCMOS integrated tions, as well as networking with ex- • Invited papers exploring ad- circuits, bipolar phenomena, and perts in these areas, please kindly join vances in process technology, discrete bipolar devices are solicited. us this year in the beautiful city of Bos- device physics, wireless de- A Special Issue of the IEEE Journal ton, MA, USA. sign, analog/mixed-signal, and of Solid-State Circuits will include modeling selected papers from BCTM 2015. • Technical papers covering the lat- Jean-Baptiste Begueret est advances in physics, design, General Contact Information 2015 BCTM General Chair performance, fabrication, char- Visit the conference website www. University of Bordeaux acterization, modeling, and ap- ieee-bctm.org or contact Catherine plication of Si/SiGe/SiC bipolar, Shaw, Conference Manager: Phone: Doug Weiser BiCMOS, and GaN ICs 1-732-501-3334, e-mail: cshaw.cmpe- 2015 BCTM Technical Program Chair • Evening dinner banquet [email protected] Texas Instruments
S OCIETY N EWS
EDS VISION AND MISSION STATEMENTS
Vision Statement Promoting excellence in the field of electron devices for the benefit of humanity.
Mission Statement To foster professional growth of its members by satisfying their needs for easy access to and exchange of tech- nical information, publishing, education, and technical recognition and enhancing public visibility in the field of Electron Devices.
July 2015 ❍ IEEE Electron Devices Society Newsletter 13 EDS PRESIDENT’S MESSAGE
Dear Fellow EDS (VP for Publications and Products), then EDS President, Paul Yu, at the Members, was formed to investigate the details IEEE Technical Activity Board (TAB) I am writing and to develop new formal EIC Se- meeting in February 2013, a group of this Message in lection and Evaluation Procedures. five IEEE society presidents, includ- the air, which re- There were extensive discus- ing EDS, started to work together minds me of two sions among volunteers on this to lead the effort to push for IEEE fi- things: time does EIC selection matter during the nance transparency. An Ad Hoc IEEE fly at a speed cer- Publications and Products Com- Fin-Trans task group was formed Albert Wang EDS President tainly not slower mittee (PPC) meeting and BoG in early 2014 to focus on this major in an airplane and general meeting in San Francisco. task, and presented its analysis and our volunteers are busy with their Various comments and opinions on motions at each IEEE TAB meeting day jobs. Therefore, this Message the EIC selection matter have been since February 2014. We are seeing should be informative, yet short. expressed during the meetings in progresses now, though slowly. The Our last year-end Board of Gover- San Francisco and after that, which IEEE finance team has been coop- nors (BoG) meeting series was held clearly indicated that the EIC se- erating with the Fin-Trans Ad Hoc December 13–14, 2014, in San Fran- lection issue is a critical matter by providing IEEE financial data to cisco. As usual, several group work- to our members and the existing selected societies for analysis on a ing meetings were held on Saturday, EIC selection practices have room trial basis. As volunteers who dedi- December 13th, including all Stand- for improvement. As a result, two cate our time and effort to IEEE pro- ing Committee meetings and some resolutions were recently approved fessional activities, we certainly de- Technical Committee meetings, i.e., by the PPC committee and the EDS serve a transparent picture of IEEE the Power Devices and ICs Commit- Forum: first, the new “working” finances. Considering the volunteer tee meeting and the Optoelectronic EIC Selection Proposal will be used and rotating nature of member ser- Devices Committee meeting. The BoG for the immediate task of EIC se- vices, this Fin-Trans effort is deemed general meeting was held on Sunday, lection for T-ED and EDL; second, to be a challenging task. I will con- December 14th. Following a new for- a parallel process will continue for tinuously update you on this matter. mat, the BoG meeting had a one-hour the PPC committee to develop and The EDS mid-year Governance Open Forum session for all attending finalize the final written EIC Selec- meeting series was held May 30– volunteers to discuss general issues tion and Evaluation Procedures for June 1, 2015 in Singapore. To en- of interests to EDS. The December future use, which will be submitted courage more active participation BoG meeting was very fruitful and to the Forum and BoG for approval from EDS members, a two-hour covered many critical issues. before the end of 2015. I want to Open Forum session was arranged One topic that attracted lots of remind all EDS members that the for volunteers to discuss any EDS attention was on developing new goal of this EIC selection proposal related issues. For a summary of the Editor-in-Chief (EIC) Selection and task is about transparency of EDS Governance meeting, see pages 16 Evaluation Procedures for the EDS operations, fair opportunities for and 17. To conclude this Message, I journals including IEEE Transac- members, spirits of rotation for encourage you to write to me for any tions on Electron Devices (T-ED), volunteer services, and avoiding of your concerns and comments on IEEE Electron Device Letters (EDL), potential conflict of interests. At EDS business. and the IEEE Journal of the Electron this time, all EDS members should Sincerely, Devices Society (J-EDS). As a brief have received several email notic- Albert Wang from Southern California background, this new EIC selection es about nominations for the cur- proposal development task is part rent TED and EDL EIC Search. I ap- Albert Wang is a Professor of Electri- of the effort that I have been push- preciate your active participation in cal and Computer Engineering at the ing for, aiming to ensure transpar- this critical business. University of California, Riverside. ency of EDS operations in response Operations transparency is also He is President for IEEE Electron De- to EDS members’ voices recently. a heated topic at IEEE level. It has vices Society (2014-2015) and an IEEE Believe or not, EDS does not have drawn lots of attention recently, with Fellow. His research interests center a formal written policy for its jour- the main focus on IEEE finance trans- on RF and mixed-signal IC designs, nal EIC evaluation and selection. A parency. Largely initiated by a pre- integrated design-for-reliability, de- task force, led by Samar Saha (past sentation on EDS incomes and the vice and circuit integration, emerging VP for Publications) and Bin Zhao growing IEEE TAB support fees by devices and circuits, and IC CAD.
14 IEEE Electron Devices Society Newsletter ❍ July 2015 MESSAGE FROM VP REGIONS AND CHAPTERS
This is the third there is a large variety of different hosting MQs are very non-uniform. year I have been needs and practices: some are finan- We need to assist those less-active serving as VP- cially strong with large member base DLs to participate and especially to Regions/Chapters and well-established renewal pro- serve those less-active chapters. SRC (R/C), and I would cess, and others are in short of funds chairs/vice-chairs and R/C committee like to take this or relying on institutional resources members can also serve the roles opportunity to and struggle to maintain member- in linking DLs to chapters. Besides “top-down” assistance from EDS “Joe” Xing Zhou share with EDS ship. The linkage between chapters EDS Vice President- members and vol- and the society has been various pro- and SRC, “bottom-up” pro-active ini- Regions/Chapters unteers some of grams under R/C, such as the biennial tiatives from all DLs as well as local my observations regional chapter meetings as well as chapters are also the key to engag- and thoughts related to EDS regions the subsidy, CoY, DL/MQ programs. ing more DLs and chapters in these and chapters. A year ago, I wrote These programs have been designed programs. I’d like to call for all DLs to Message from VP-Regions/Chap- to better “serve members and re- check the EDS chapters’ map (http:// ters [Newsletter, p. 11, July 2014], in ward volunteers” with different lev- eds.ieee.org/global-chapters-map. which I outlined some major activi- els of success over the years, and it html), and contact EDS/SRC for as- ties and programs under R/C, such as has been a major challenge on how sistance if needed, to link with local chapter subsidy, chapter of the year to improve these programs to serve chapters for a DL talk when traveling (CoY) award, sub-committee for re- the variety of different needs of chap- to various places. For MQ initiators, gions/chapters (SRC), distinguished ters and members. With the limited we also encourage coordination for lecturer (DL) and mini-colloquia total funds, ideally it would be better joint events with nearby chapters (MQ) programs, and some ideas for to have non-uniform fund allocation and in conjunction with regional con- improvements. Many of the topics and targeted fund utilization for the ferences. It is important to note that we discussed over the years in R/C diversity in different needs. Howev- we would like to leverage various re- committee meetings “were cen- er, it has always been a difficult task sources and DLs being on a side-trip, tered on how to serve members and for making changes over estab- rather than supporting DLs to attend reward volunteers at the society/ lished practices. paid conferences from DL/MQ bud- region/chapter levels” [Newsletter, The DL and MQ programs have gets. Together, let us work towards p. 11, Oct. 2013], and many of the been very popular and successful better service for o ur members and ideas I proposed were detailed at the among our chapters. Unlike some reward our volunteers. December 2012 AdCom meeting in other societies, our DLs are not de- my role as SRC-R10 chair, when I was signed for the “prestige” but for “Joe” Xing Zhou appointed as the incoming VP-R/C. serving our chapters. The limited EDS Vice President-Regions/Chapters Members and chapters are the funds are meant for assisting DLs Nanyang Technological University grass-roots of a society, without them and chapters in organizing techni- Singapore there will be no society and no mean- cal events for members. We have ing for such a volunteer-driven orga- been encouraging coordinated MQ “Joe” Xing Zhou, Vice President of nization. Among the society (or IEEE) organization and leveraging various Regions/Chapters of IEEE EDS, is a members, they can be largely catego- resources. One good example was professor at Nanyang Technologi- rized into two groups: active mem- the joint MQs (WIMNACT-42, 43, 44) cal University, Singapore. His group bers (or “volunteers”) and inactive in November 2014, coordinated by has been developing a core compact members (who just pay dues without Prof, Steve Chung as SRC-R10 chair, model for silicon bulk-CMOS, SOI, participating in any society activi- in which a group of DLs visited the FinFET and nanowire, as well as III- ties). Among the volunteers, they can Shanghai, Nanjing, and Hangzhou V HEMT devices. He was a guest-EiC be active members at two different chapters in a combined trip with for the Feb’2014 special issue of IEEE levels: chapter and society (the SRC funds from the MQ and SRC budgets Transactions on Electron Devices on within EDS is an “intermediate” re- as well as chapters’ support. How- compact modeling for emerging de- gional level that is actually belonging ever, we do still have a situation in vices, and is currently an editor for to society level). Among the chapters, which DL participation and chapters IEEE Electron Device Letters.
July 2015 ❍ IEEE Electron Devices Society Newsletter 15 MESSAGE FROM EDITOR-IN CHIEF
Dear Readers, tion with EDS helps in nurturing the included in this issue. Our idea is to Greetings from professional career. We are planning communicate to all our members in the EDS Newslet- to have such interviews with EDS a speedy manner. Newsletter is now ter team. We have young professionals in different ca- available in mobile compatible Flip- initiated a new reer paths and from all geographic book version also, apart from the column “Reflec- regions in future. print and pdf format. Also it is ac- tions from Young In the Technical Briefs section the cessible to all through EDS website.
M K Radhakrishnan Professionals” major article is on Reliability Trends in However, we are not receiving suffi- Editor-in-Chief, in the Newslet- nanoscale CMOS Devices. This will be cient feedback from our readers. We EDS Newsletter ter starting from the first one of its kind on the device would like hear the readers’ views, this issue. An in- reliability trends. The technical sum- and I encourage everyone to write to terview with a vivid EDS YP is pub- mary and links of major conferences me or to [email protected] lished in this column. This column is in devices area are also featured. intended to reflect the person’s per- Summary of the deliberations at M K Radhakrishnan ception about the profession, IEEE the EDS Board of Governors meeting Editor-in-Chief, EDS Newsletter as well as EDS and how the associa- held on 31 May 2015 at Singapore is e-mail: [email protected]
EDS GOVERNANCE MEETING SUMMARY
Singapore Fling! ated for over 9 hours, proving once “My goal is to keep EDS a happy May 30–June 1, again that the work of this committee volunteer family with transpar- 2015: The EDS is among the most challenging and ency and efficiency.” Mid-year Gover- important to the Society and the IEEE. nance Meeting Albert Wang returned to Re- Publications and Newsletter EDS President gion 10 this year Joint Meeting in grand style, Fernando Guarin and MK Rad- bringing together hakrishnan presented the status newsletter. The increased emphasis Fernando Guarin EDS Secretary the Society’s se- and recent improvements to the on technical content as well as the nior leadership transition to web format received with over 20 EDS Chapter Chairs positive reviews. from across Asia and the Pacific in Bin Zhao, EDS VP of Publications beautiful Singapore. The meeting and Products, chaired the critical was a phenomenal success, combin- Publications committee meeting. In ing vital society business with some addition to reviewing the status of the truly special social events to create ongoing in-depth and detailed search- an enriching and energizing event es for the T-ED and EDL Editors-in- for all attendees. The weekend began Chief, the committee launched plans on Saturday morning, with a series to improve the health and vitality of of important Standing Committee some of the smaller, cosponsored meetings. publications.
Fellows Evaluations Technical Committees Despite long travel, and heavy jet-lag, and Meetings ED Malaysia Chapter was selected as the 2014 the Fellows Evaluation Committee Led by EDS’s VP of Technical Commit- recipient of the IEEE Electron Devices Society began their work bright and early Sat- tees and Meetings, Leda Lunardi, 2014 Region 10 Chapter of the Year Award. urday morning, with the difficult task ‘Joe’ Xing Zhou, EDS VP Regions/Chapters was a banner year for EDS’s robust of reviewing and evaluating 47 IEEE (right), presenting award to Dr. Burhanuddin roster of technical meetings and con- Fellow nominations. Led by Guido Yeop Majlis (Chapter Advisor) and Assoc. ferences. To build on that success, the Groeseneken, the committee deliber- Dr. Badariah Bais (Chapter Chair) committee held a strategic planning
16 IEEE Electron Devices Society Newsletter ❍ July 2015 Attendees of the 2015 EDS Region 10 Chapters Meeting held at the Marina Mandarin Hotel, Singapore
Attendees of the EDS Board of Governors Dinner enjoyed the panoramic views of the Singapore skyline at the Pan Pacific Singapore Hotel (Marina Bay) session to ensure not only the health lent opportunity for staff and volun- cial state of EDS and the news is of our conferences, but also define teer leadership to learn more about good! We have well over a year’s way to engage our 14 technical com- the chapters’ perspectives, needs, expenses in reserve. In addi- mittees in all aspects of the society’s and successes and to gain valuable tion he received approval for key affairs, such as publication, webinars, insight into how EDS needs to con- 2016 budget inputs and additional and defining new technical areas for tinually evolve to meet the needs of spending in 2015 of roughly $100K. the society to explore. its key constituents throughout the • Past Vice President of the IEEE globe particularly through the webi- Technical Activities Board (TAB), Education, Membership, nar and EDS-ETC programs. Jacek Zurada, joined us to pres- and Chapters ent information on the TAB’s stra- Combining three committee discus- EDS Governance Meeting tegic direction and some new sions into a single afternoon meeting, The EDS Forum and Board of Gov- initiatives to support it. Vice Presidents Mikael Östling (Mem- ernors met on Sunday, May 31st, for • Paul Yu, EDS Junior Past Pres- bership) and Joe Zhou (Regions and the Mid-Year Governance meeting. ident and Awards Chair, suc- Chapters) and EDS Secretary and The meeting’s discussions covered cessfully presented a proposal Education Chair, Fernando Guarín, nearly every aspect of the society’s from the Photovoltaics Special- convened an outstanding forum to operations, ending with an extend- ists Conference (PVSC) to elevate address these critical areas of the ed Open-Forum to provide a free the conference’s William Cherry society’s life. In addition to provid- exchange of ideas and debate over Award to be an official EDS ing an important strategic planning how we can continue to improve the Society-level award. Now that session, the highlight of the meet- Society to ensure its preeminence EDS has approved, the next step ing was the open dialogue and frank as the world’s leading organization is to seek TAB’s approval, which discussion with over 20 EDS chapter devoted to device engineering. Here will happen at the TAB meeting chairs from across Region 10. Chap- are some of the highlights: series in November. ters are the life-blood of the society • Ravi Todi, EDS Treasurer, report- and this meeting provided an excel- ing remotely, reviewed the finan- (continued on back cover)
July 2015 ❍ IEEE Electron Devices Society Newsletter 17 CALL FOR NOMINATIONS EDS BOARD OF GOVERNORS—BOG (FORMERLY ADCOM) MEMBERS-AT-LARGE ELECTION
The IEEE Electron Devices Society invites nominations for election to its Board of Governors – BoG (formerly AdCom). The next election will be held after the BoG meeting on Sunday, Decem- ber 6, 2015. This year, seven out of the twenty-two members will be elected for a 3-year term, with a maximum of two consecutive terms.
This year EDS will again be running the pilot program for one of the seven BoG Member- at-Large seats to be elected via the entire EDS membership. All nominees must choose to Paul Yu participate in either the election by EDS membership or the election by the BoG. There must EDS Chair of be a minimum of two nominees for the seat elected by membership. If there are less than Nominations & two nominees for the seat, an election by EDS membership will not be held and the candidate Elections will be moved to the election by the BoG. All electees begin their term in office on January 1, 2016. The nominees need not be present to run for the election. Self-nominations are allowed.
Any EDS member who has served for a minimum of one year as an EDS Officer, Vice-President, Standing & Tech- nical Committee Chair/Member, Publication Editor, and Chapter Chair is eligible to be nominated. The electees are expected to attend both BoG Meetings every year. While the December meeting is organized in connection with the IEEE International Electron Devices Meeting, the mid-year meeting is frequently held outside the US. Partial travel support is available to attend both of these meetings.
All nominees must be endorsed by one BoG member, i.e., one of the four officers (President, President-Elect, Treasurer or Secretary), the Jr. or Sr. Past President or one of the 22 current BoG Members-at-Large. It is the re- sponsibility of the endorser to make sure that, if elected, the nominee is willing to actively serve in the position as a BoG member. In the unlikely event that a nominee must withdraw their name from the election ballot, they must do so by November 1, 2015.
Please submit your EDS BoG nomination by August 1, 2015, using the o nline nomination form (http://eds.ieee. org/bog-call-for-nominations.html).
Also, all endorsement letters should be sent to Laura J. Riello, EDS Executive Office, via e-mail: [email protected] by August 1, 2015. If you have any questions, please feel free to contact Laura Riello ([email protected]) with a copy to me at [email protected].
Paul Yu EDS Chair of Nominations & Elections University of California at San Diego San Diego, CA, USA
18 IEEE Electron Devices Society Newsletter ❍ July 2015 EDS BOARD OF GOVERNORS MEMBERS-AT-LARGE ELECTION PROCESS
The Members- elected by membership. If there are not to receive election material elec- at-Large (MAL) less than two nominees for the seat, tronically (based upon the commu- of the EDS Board an election by EDS membership will nication preference in their member of Governors are not be held and the candidate will be profile). elected f o r s t a g - moved to the election by the BoG. Any EDS member who has served g e r e d 3-year terms, All electees begin their term in office for a minimum of one year as an with a maximum on January 1, 2016. The nominees EDS Officer, Vice-President, Stand- of two consecu- need not be present to run for the ing & Technical Committee Chair/ Paul Yu tive terms. The election. In 2015, seven positions will Member, Publication Editor & Chap- EDS Nominations 1993 Constitu- be filled. ter Chair is eligible to be nominated, and Elections Chair tion and Bylaws The election procedure begins unless otherwise precluded from do- changes mandated increasing the with the announcement and Call for ing so in the EDS Bylaws. All nomi- number of elected MAL from 18 to Nominations in the EDS Newsletter. nees must be endorsed by one BoG 22, and required that there be at least The slate of nominees is developed member, i.e., one of the four officers two members from each of the fol- by the EDS Nominations Committee (President, President-Elect, Treasurer lowing geographic areas: Regions and includes the non-Committee and or Secretary), the Jr. or Sr. Past Pres- 1–7 and 9; Region 8; Region 10. In self-nominations received. Nomi- ident or one of the 22 current BoG 2003, EDS made changes to its Con- nees are asked to submit a two-page Members-at-Large. Self-nomination stitution and Bylaws to require that biographical resume and an option- is allowed. Endorsers should send at least one elected BoG member is al 50 word personal statement in a a brief email to Laura Riello stating a Young Professional (YP – formerly standard format. The election for the that they would like to endorse the Gold member). A Young Profession- one BoG seat voted on by the EDS candidate. Please note that there is al member is defined by IEEE as a membership will be done using Vote no limit to the number of candidates member who graduated with his/her Net. Vote Net is a web based tool that a full voting BoG member can first professional degree within the that allows members the opportuni- endorse. last fifteen years. It is also required ty to cast their ballots electronically. Nominations are closed after Au- that there are at least 1.5 candidates An e-announcement will be sent to gust 1, 2015, and the biographical re- for each opening. those EDS members who have email sumes and endorsement letters are This year EDS will again be run- addresses in the IEEE database prior distributed to the BoG prior to the ning the pilot program for one of to the election launch date. It will December BoG meeting. The elec- the BoG Member-at-Large seats to give the members an opportunity to tion is then held after the conclusion be elected via the entire EDS mem- indicate their preference to receive of the meeting. bership. All nominees must choose an electronic or paper ballot. By de- to participate in either the election fault, paper ballots are automatically Paul Yu by EDS membership or the election printed and mailed to EDS members EDS Chair of Nominations & Elections by the BoG. There must be a mini- without email on file as well as to University of California at San Diego mum of two nominees for the seat those that have indicated they prefer San Diego, CA, USA
July 2015 ❍ IEEE Electron Devices Society Newsletter 19 IEEE ANNUAL ELECTION—DID YOU VOTE YET?
This is a reminder for EDS members to vote in the 2015 IEEE Annual Election for the following positions and candidates. Listed below are the positions and candidates that will appear on the 2015 IEEE Annual Election ballot.
Position Candidate
IEEE President-Elect, 2016 • Karen Bartleson (Nominated by IEEE Board of Directors) • Frederick (Fred) C. Mintzer (Nominated by IEEE Board of Directors)
IEEE Region 1 (Northeastern USA) • Babak Dastgheib-Beheshti (Nominated by IEEE Region 1) Delegate-Elect/Director-Elect, 2016–2017 • Gim Soon Wan (Nominated by IEEE Region 1)
IEEE Region 3 (Southern USA) • John E. Montague (Nominated by IEEE Region 3) Delegate-Elect/Director-Elect, 2016–2017 • Gregg L. Vaughn (Nominated by IEEE Region 3)
IEEE Region 5 (Southwestern USA) • T. Scott Atkinson (Nominated by IEEE Region 5) Delegate-Elect/Director-Elect, 2016–2017 • Robert C. Shapiro (Nominated by IEEE Region 5)
IEEE Region 7 (Canada) • Xavier N. Fernando (Nominated by IEEE Region 7) Delegate-Elect/Director-Elect, 2016–2017 • Maike Luiken (Nominated by IEEE Region 7)
IEEE Region 9 (Latin America) • Jose-Ignacio Castillo-Velazquez (Nominated by IEEE Region 9) Delegate-Elect/Director-Elect, 2016–2017 • Teofilo J. Ramos (Nominated by Petition) • Enrique A. Tejera M. (Nominated by IEEE Region 9)
IEEE Standards Association • Robert S. Fish (Nominated by IEEE Standards Association) President-Elect, 2016 • Forrest D. (Don) Wright (Nominated by IEEE Standards Assoc.)
IEEE Standards Association Board of • W. C. (Chuck) Adams (Nominated by IEEE Standards Association) Governors Member-at-Large, 2016–2017 • Philip B. Winston (Nominated by IEEE Standards Association)
IEEE Standards Association Board of • Stanley J. Krolikoski (Nominated by IEEE Standards Association) Governors Member-at-Large, 2016–2017 • Paul Nikolich (Nominated by IEEE Standards Association)
IEEE Technical Activities Vice • Marina Ruggieri (Nominated by IEEE Technical Activities) President-Elect, 2016 • Douglas N. Zuckerman (Nominated by IEEE Technical Activities)
IEEE-USA President-Elect, 2016 • Keith D. Grzelak (Nominated by IEEE-USA) • Karen S. Pedersen (Nominated by IEEE-USA)
IEEE-USA Member-at-Large, 2016–2017 • Wole Akpose (Nominated by IEEE-USA) • Daniel N. Donahoe (Nominated by IEEE-USA)
Constitutional Amendment http://www.ieee.org/about/corporate/election/2015_constitutional_ amendment.html
Balloting period starts on 17 August and ends at 12:00 noon, Central Time USA (17:00 UTC) on 1 October 2015. All eligible voting members should look for their ballot to arrive via postal mail or access their electronically at www.ieee. org/elections. Forward election questions to [email protected]
20 IEEE Electron Devices Society Newsletter ❍ July 2015 EDS COMPOUND SEMICONDUCTOR DEVICES AND CIRCUITS TECHNICAL COMMITTEE REPORT
Research on compound semicon- 2012 Proc., p. 27.6.1) 20 nm–80 nm GaN HEMTs with gate lengths in the ductor (CS) electronics is showing channel length strained InGaAs GAA 30 to 50 nm range with frequency continuous advances in traditional nanowire FETs with record high on- performance well in excess of 200 areas and new fields. Microwave state and off-state performance by GHz and a noise figure of 0.25 dB at and mm-wave applications are ben- equivalent oxide thickness (EOT; the 10 GHz, see IEEE ED Trans., vol. 60, efiting from further developments in insulator exploits Al2O3 and LaAlO3 no. 10, p. 3099. Also in high-frequen- well-established technologies (e.g. layers) and nanowire width scal- cy applications, properly optimized III-V HEMTs and HBTs), while re- ing down to 1.2 nm and 20 nm, re- AlGaN/GaN HEMTs grown on Si search in III-V MOSFETs and FINFETs spectively; performances included a substrates have shown a power den- as a possible alternative to Si-based SS = 63 mV/dec, DIBL as low as sity of 1.5 W/mm at 40 GHz, see IEEE digital devices has reached interest- 7 mV/V, ION = 0.63 mA/nm and gm = ED Trans., vol. 60, no. 10, p. 3105. ing milestones. Progress in widegap 1.74 mS/nm at VDS = 0.5 V, demon- Concerning power switching ap- (SiC and GaN) electronics continues strating the promise of InGaAs GAA plications, wide-bandgap semicon- and a steady improvement is seen in FETs for 10 nm and beyond high- ductors such as SiC and GaN are the related reliability issues. Further speed low-power digital applica- witnessing rapid increase in R&D major advancements are found for tions. The same research groups (see as well as capital investment for the application of III-N concepts to the IEDM 2012 Proc., p. 23.7.1) pro- next-generation power conversion power electronics for fast switching posed a vertically stacked nanowire & management systems with higher in energy conversion. At the same array GAA InGaAs FET (imagina- efficiency. With SiC MOSFETs being time, the quest for graphene-like 2D tively called 4D GAA FETs) achieving exploited in vertical structures for semiconductors has also found an a 4x increase of the driving current its high current density, the devel- interesting CS line in the 2D transi- and gm versus the 3D (non-stacked opment of GaN-based power tran- tion metal chalcogenides. array) version. The device exhibits a sistors focuses on the lateral het-
The main driver of the develop- record high ION = 9 mA/nm and gm = erojunctions (e.g. AlGaN/GaN) for ment of III-V MOSFETs lies in the 6.2 mS/nm. The III-V 4D transistor the material maturity. Major efforts superior electron transport proper- structure appears promising also in being made to tackle key technol- ties of III-V materials with respect the RF and microwave analog field. ogy challenges include: (i) finding to Si, enabling an attractive route During the last few years, the de- the suitable gate dielectrics with a to downscaling at sub 10 nm nodes. velopment of widegap semiconduc- low interface trap density for im- Different architectures have been tor devices, in particular GaN-based, proved threshold voltage stability; considered for aggressively scaled has undergone a steady progress. (ii) optimizing buffer structures for III-V devices; examples are the FIN- For an overview of recent advances high breakdown and low dynamic FET, the Nanowire FET (also called the reader can refer to the October ON-resistance on large-area silicon Gate All Around, GAA FET), the Ex- 2013 (vol. 60, no. 10) Special Issue of substrates; and (iii) optimizing pas- tremely Thin Body Quantum Well the IEEE ED Trans. on GaN electron- sivation techniques and field-plate (ETB-QW) FET. ETB-QW FETs exploit ics. As mentioned, developments structures for improved device reli- a metal gate, high-l insulator, and have concerned not only the tradi- ability/stability. We are also witness- an InGaAs/InAs/InGaAs composite tional RF and microwave power, but ing a significant increase in product channel. ETB-QW InAs MOSFETs also power switching applications announcements of GaN power de- with improved electrostatics, 50 nm with lower-cost GaN on Si devices. vices covering a wide range of volt- gate length and subthreshold swing The progress of RF, microwave age rating (30 V ~ 600 V) during the (SS) in excess of 100 mV/dec, DIBL of and millimeter wave GaN HEMTs last year. 73 mV/V, off-state current of 0.5 nA/ has led to cutoff frequencies exceed- Significant advances have also nm and maximum gm > 1.5 mS/nm ing 450 GHz and oscillation frequen- been made in the development of at VDS = 0.5 V were presented in cies close to 600 GHz in devices GaN-based MOSFETs. With respect 2012 at IEDM by researchers from with optimized asymmetric layout to SiC, the GaN MOSFET has higher SEMATECH, Globalfoundries, MIT, and nanometer-scale gate lengths, mobility for higher speed application UT-Austin, CNSE, TEL and HKUST, see the paper from HRL Laborato- and lower power consumption dur- see the IEDM 2012 Proc., p. 32.3.1. Re- ries (IEEE ED Trans., vol.60, no.10, ing turn-on. Compared with AlGaN/ searchers from Purdue and Harvard p. 2982). TrQuint reports both GaN HEMTs, the GaN MOSFET has Universities presented (see IEDM E-mode and D-mode InAlN/AlN/ the advantages of positive threshold
July 2015 ❍ IEEE Electron Devices Society Newsletter 21 voltage, lower leakage current and mono- and multilayers, contrarily to committee members have been guest superior reliability for power elec- graphene, have a bandgap, direct editors of the October 2013 ED Trans. tronics. To lower the cost, the GaN (2 eV) and indirect (1.8 eV), respec- SI on GaN electron devices and in should be grown on Si substrate that tively. This allows the fabrication of the chapter RF and microwave semi- has a large wafer size up to 12 inch. thin-film transistors with excellent conductor technologies of the EDS Nevertheless, the high tensile strain switch-off with E-mode D-mode anniversary book Guide to state-of- of GaN can create crack in the Si operation, but also of sensors and the-art electron devices, J. Burghartz, substrate. One solution is to add the photodetectors, as potential substi- ed., Wiley-IEEE, 2013. Among future compressive strained AlSiC layer be- tutes of Si in conventional electron- activities the EDS CSDC Committee fore the epitaxial AlN buffer layer and ics and of organic and amorphous Si would continue proposing special is- the GaN/AlGaN layer (IEEE EDL 34, in systems and display applications. sues in the EDS periodicals focused p. 975, Aug. 2013). Besides, good de- The first MoS2 TFT was presented by on recent developments in the area. vice performance of normally-off, gate- Kis et al. of EPFL in 2011 (see Nature recessed GaN MOSFET was reached Nanotech., vol. 6, no. 3, pp. 147–150, Giovanni Ghione with a 600 V breakdown voltage, in 2011) but many research groups are EDS CSDC Technical addition to the crack-free surface. This engaged in the development of this Committee Chair technology may lead to grow GaN/Al- technology, see e.g. the multilayer Politecnico di Torino, Italy
GaN on large size Si wafers. MoS2 transistor presented at IEDM in Recently, the new area of gra- 2012 (pp. 5.5.1-5.5.4) and the bilayer Kevin Chen phene-like 2D compound semicon- MoS2 integrated circuits (implement- Hong Kong University ductors opened up with the family ing logical functions and ring oscil- of Science & Technology of transition metal dichalcogenides. lators) in Nano Letters, 2012, 12 (9), Similar to graphite, these can be ex- pp. 4674–4680. Albert Chin foliated into single mono- or multilay- The 2013 EDS CSDC Committee National Chiao Tung University ers and deposed onto Si substrates. member list can be found at: http:// Taiwan
Molybdenum disulfide (MoS2) prob- eds.ieee.org/technical-committees/ ably is the most important material eds-compound-semiconductor- Ruediger Quay nowadays; although its mobility is of devices-and-circuits-technical- Fraunhofer Institute 2 the order of 100 cm /V.s only, MoS2 committee.html. Some of the CSDC Freiburg, Germany
2015 WILLIAM R. CHERRY AWARD WINNER— DR. CHRISTIANA HONSBERG
The Photovoltaic Specialist Confer- technology of photovoltaic energy of QESST: the NSF Engineering Re- ence Cherry Committee is proud to conversion. The award winner must search Center for Quantum Energy announce Prof. Christiana B. have made significant contributions and Sustainable Solar Technologies Honsberg as the winner of the 2015 to the science and/or technology of PV and Director of the Solar Power Lab- William R. Cherry Award. This award is energy conversion, with dissemina- oratories at Arizona State Univer- named in honor of William R. Cherry, tion by substantial publications and sity. Dr. Honsberg received her PhD a founder of the photovoltaic commu- presentations. in Electrical Engineering from the nity. In the 1950’s, he was instrumental Christiana B. University of Delaware in 1992, fol- in establishing solar cells as the ideal Honsberg is a lowing a B.S. and M.S. in 1986 and power source for space satellites and Professor at the 1989, respectively, both from the for recognizing, advocating, and nur- School of Elec- University of Delaware, as well. She turing the use of photovoltaic systems trical, Computer has been a pioneer in the advanced for terrestrial applications. The William and Energy En- concept photovoltaic area including: R. Cherry award was instituted in 1980, gineering and developing generalized thermody- shortly after his death. The purpose Senior Sustain- namic theory for efficiency limits of the award is to recognize an indi- ability Scientist at the Julie Ann in solar cells allowing identification vidual engineer or scientist who de- Wrigley Global Institute of Sustain- of common underpinning physical voted a part of their professional life ability at Arizona State University in mechanisms in advanced concept to the advancement of the science and Tempe, Arizona. She is the Director approaches; proposal of combined
22 IEEE Electron Devices Society Newsletter ❍ July 2015 Auger/multiple quasi-Fermi level innovative solutions to sustainable Her research has also identified and approaches; identification of quasi- electricity generation. This Engineer- implemented the GaAsSb/InAsP Fermi levels as central requirement ing Research Center is funded jointly barrier/quantum dot system for ex- in interband and quantum well ap- ($29 million over 10 years) by the U.S. ploration of intermediate band solar proaches; formulation and analyses National Science Foundation and the cells and developed new commercial of fundamental loss mechanisms in U.S. Department of Energy to solve high-efficiency silicon solar cells, in- intermediate band approaches; and challenges to harnessing solar power cluding invention and licensing of development of methods to identify in economically viable and sustain- high-performance solar cell technol- existence of multiple quasi- Fermi able ways. ogy, technology transfer of buried levels in experimental devices. Prof. Honsberg also was the Prin- contact technology and development Prof. Honsberg’s leadership of cipal Investigator for the “Very High of a new passivation technique which QESST has brought together the pho- Efficiency Solar Cells” program, was used in the demonstration of the tovoltaic research community repre- reaching a sum-of-the-efficiencies highest open-circuit voltage on a sili- senting multiple universities and of 42.8%, and she led the first ex- con solar cell at that time. world-renowned energy companies perimental demonstration of GaN in a strategic partnership to generate and InGaN high-voltage solar cells. 2015 PVSC Cherry Award Committee
42ND PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) YOUNG PROFESSIONAL AWARD WINNER
The IEEE Photo- perovskite-based materials that have of “gyroid” structured titania for dye voltaics Specialists spawned a revolution in thinking solar cells, the first demonstration of Conference (PVSC) about thin film PV technologies. a mesoporous single crystal of TiO2, continued this year Henry Snaith undertook his PhD at and the recent discovery of high ef- in recognizing an the University of Cambridge, work- ficiency organic-inorganic metal ha- outstanding young ing on organic photovoltaics under lide perovskite based solar cells. His professional in the Prof. Sir. Richard Friend. Then, he recent work with perovskite solar
Henry Snaith – photovoltaics (PV) spent two years at the EPFL, in Swit- cells has transformed the PV research Recipient of the community. The zerland, as a post doc working on community, and scientists from ev- 2015 PVSC Young PVSC Young Pro- dye-sensitized solar cells under Prof ery sector are turning their hands to Professional Award fessional Award Michael Grätzel. He returned to the explore the intriguing properties of recognizes individ- Cambridge to take up a Fellowship perovskites. He has risen over £9M uals who have made significant contri- for Clare College in 2006, and moved in research funding from the UK re- butions to the science and technology to the Clarendon Laboratory of Ox- search councils, European Commis- of PV energy conversion, including ford Physics in 2007, where he now sion and Industry over the last 8 years, work on PV materials, devices, mod- holds a professorship and directs a which supports his research team. In ules, and/or systems. The award recipi- group researching in optoelectron- December 2010 he founded Oxford ent must also show significant promise ics, specifically organic, hybrid and Photovoltaics Ltd., which is rapidly as a leader in the field. perovskite devices. His research is commercializing the perovskite solar On behalf of the organizing and focused on developing new materi- technology transferred from his Uni- program committees of the 42nd IEEE als and structures for hybrid solar versity Laboratory. PVSC, I am delighted to announce cells and understanding and control- Congratulations, Professor Snaith! the recipient of this year’s award— ling the physical processes occurring Professor Henry Snaith (University at interfaces. He has made a number Kyle Montgomery of Oxford). He is recognized for pio- of significant advances for emerging 2015 PVSC Awards Chair neering breakthroughs with hybrid PV, including the first demonstration University of California, Davis
July 2015 ❍ IEEE Electron Devices Society Newsletter 23 CONGRATULATIONS TO THE 23 EDS MEMBERS RECENTLY ELECTED TO IEEE SENIOR MEMBER GRADE!
Hideaki Aochi Yi Gu Giacinta Parish Dimitris Tsoukalas Laurent Blanquart James Henry Tirthajyoti Sarkar Jan Voves Jose Casallas Tetsuya Hirose Shinji Sato Yih Wang Salih Celik M Saiful Islam Suhaidi Shafie Alma Wickenden Ho-Young Cha Hang-Ting Lue Aaron Thean Jiangeng Xue Alan Delahoy Dheena Moongilan Han Wui Then
If you have been in professional practice for 10 years, For more information on senior member status, visit: you may be eligible for Senior Membership, the highest http://www.ieee.org/membership_services/membership/ grade of membership for which an individual can apply. senior/index.html New senior members receive a wood and bronze plaque To apply for senior member status, fill out the on-line and a credit certificate for up to US$25 for a new IEEE application: https://www.ieee.org/membership_services/ society membership. Upon request a letter will be sent to membership/senior/application/index.html. employers, recognizing this new status. You will need to Sign-in with your IEEE account.
Please remember to designate the Electron Devices Society as your nominating entity!
ENHANCE YOUR CAREER WITH IEEE SENIOR MEMBERSHIP
The Electron De- plaque to be proudly displayed reference for other applicants for vices Society for colleagues, clients and em- senior membership. established the ployers to see. The plaque, an at- • Review panel: Senior members EDS Senior Mem- tractive fine wood with bronze are invited to be on the panel to re- ber Program to engraving, is sent within six to view senior member applications. both complement eight weeks after elevation. • US$25 referral coupon: New- and enhance the • US$25 coupon: IEEE will recognize ly elevated Senior members are Mikael Östling IEEE’s Nominate- all newly elevated Senior mem- encouraged to find the next in- EDS Vice-President a-Senior-Member bers with a coupon worth up to novators of tomorrow and invite of Membership & Initiative and make US$25. This coupon can be used them to join IEEE. Invite them to Services IEEE/EDS mem- to join one new IEEE society. The join and the new IEEE member bers aware of the opportunity and coupon expires on 31 December of will receive $25 off their first year encourage them to elevate their IEEE the year in which it is received. of membership. membership grade to Senior Mem- • Letter of commendation: A let- As part of the IEEE’s Nominate- ber. This is the highest IEEE grade for ter of commendation will be sent a-Senior-Member Initiative, the which an individual can apply and is to your employer on the achieve- nominating entity designated on the first step to becoming a Fellow ment of Senior member grade the member’s application form will of IEEE. If you have been in profes- (upon the request of the newly receive US$10 from IEEE for each sional practice of 10 years, you may elected Senior member). application approved for Senior be eligible for Senior Membership. • Announcements: Announcement Member grade when there are at Ben efits of Senior Membership1 of elevation can be made in sec- least five approved applications. As • Recognition: The professional rec- tion/society and/or local newslet- an EDS member, we would appreci- ognition of your peers for techni- ters, newspapers and notices. ate it if you could indicate on your cal and professional excellence. • Leadership Eligibility: Senior Senior Member application form • Senior member plaque: Since members are eligible to hold ex- that EDS is your nominating entity. January 1999, all newly elevated ecutive IEEE volunteer positions. Please be aware that even if you Senior members have received • Ability to refer other candidates: decide to list EDS as your nominating an engraved Senior Member Senior members can serve as a entity, you still need to have an IEEE
24 IEEE Electron Devices Society Newsletter ❍ July 2015 member nominate you along with two Portal: http://www.ieee.org/member- 1IEEE.org, http://www.ieee.org/mem- other references. Your nominator and ship_services/membership/senior/ bership_services/membership/se- your references all must be active IEEE index.html . nior/index.html members holding Senior Member, Fel- We strongly encourage you to ap- Mikael Östling low or Honorary Member grade. ply for IEEE Senior Membership to EDS Vice-President of Membership For more information on the crite- enhance your career. At the same & Services ria for elevation to Senior Member, time, you’ll be helping EDS. Thank KTH, Royal Institute of Technology please visit the Senior Membership you for supporting IEEE and EDS. Sweden
EDS DISTINGUISHED LECTURER AND MINI-COLLOQUIA PROGRAMS
The EDS Distinguished Lecturer (DL) ers will be visiting an area and/or be required of EDS and could be Program exists for the purpose of a chapter cannot pay for all the ex- covered by the MQ Program budget providing EDS Chapters with a list of penses for a lecturer trip. upon request. Please visit the EDS quality lecturers who can potentially To request DL travel funding, website for more information (http:// give talks at local chapter meetings. the EDS DL would need to submit eds.ieee.org/lectures.html). To arrange for a lecture, EDS chap- an EDS DL Activity Log & Funding We ask all chapters that are hold- ters should visit the EDS website to Request Form (http://eds.ieee.org/ ing EDS Mini-Colloquia to utilize the view the listing of EDS DLs and con- lectures/procedures-for-requesting- free EDS registration tool that we tact the EDS DL directly. A general eds-distinguished-lecturers-and- have developed to keep track of at- guideline for the visit, but not the ab- funding.html). tendance at our MQ and DL events. solute rule, is that the lecturer should EDS is also encouraging chapters EDS will provide possible member- be able to include the meeting site to hold mini-colloquia (MQ) in re- ship discounts to non-IEEE/EDS with an already planned travel sched- mote areas. This concept generally in- members when they register for ule at a small incremental cost to the volves the sending of about 3 or more your MQ, so please include your travel plan. Although the concept of DLs to travel to a region/chapter and personalized registration link in your the program is to have the lecturers present the latest developments in a MQ announcements. minimize travel costs by combining particular field. The chapters/regions For more information on the DL their visits with planned business would be responsible for handling or MQ Programs, please visit the trips, EDS will help subsidize lecturer all the arrangements of the event and EDS website or contact Laura Riello travel in cases where few/no lectur- only minimal financial support would of the EDS Executive Office.
EDS CHAPTER SUBSIDIES FOR 2016
The deadline for EDS chapters to Chapter Subsidy requests can be request a subsidy for 2016 is Sep- requested by completing the chapter tember 1, 2015. For 2015, the EDS activity report, which can be found BoG awarded funding to 67 chap- at http://eds.ieee.org/chapter-subsi- ters, with most amounts primarily dy-program.html. Please note that ranging from US$250 to US$750. the report needs to be submitted by In June, Chapter Chairs were sent September 1, 2015. an e-mail notifying them of the Final decisions concerning subsi- current funding cycle and provid- dies will be made in December. Sub- ing them with a list of guidelines. promotion, travel allowances for sidy checks will be issued by early In general, activities which are invited speakers to chapter events, January of the following year. Please considered fundable include, but and support for student activities visit the EDS website (www.ieee.org/ are not limited to, membership at local institutions. eds) for more information.
July 2015 ❍ IEEE Electron Devices Society Newsletter 25 THE EDS-ETC PROGRAM A BIG HIT WITH OUR IEEE FAMILIES AT TAKE YOUR DAUGHTERS AND SONS TO WORK DAY
The Electron Devices Society was a know how much their work is appre- major contributor to this year’s Take ciated and we encourage each and Your Daughters and Sons to Work every EDS-ETC program organizer Day at the IEEE Operations Center. to submit reports and articles to this On April 23rd, more than 100 visitors newsletter to promote their good between the ages of 8 and 14 came works and successes. to the IEEE Operations Center for a “What a great day!” said EDS Ex- full schedule of educational and fun ecutive Director Chris Jannuzzi. “As activities that helped to demonstrate an EDS member and staffer, it was the connection between their fam- wonderful to see the EDS-ETC pro- ily’s contributions on an every-day gram in action at IEEE. And just as basis to the world-wide initiatives gratifying was being the parent of supported by the IEEE. two of the children fortunate enough We were very fortunate to have to attend this outstanding event. One of the popular demos, the raspberry two invaluable and dedicated EDS ‘selfie’ We’re very grateful to Fernando and volunteers, Fernando Guarin (EDS Nagi for their time and service to Secretary and Chair of EDS Edu- EDS and the IEEE.” cational Activities Committee) and science. Adding a miniature moni- The following photos are just Nagi Naganathan (Secretary IEEE tor and keyboard, he demonstrated some of the dozens taken at the Princeton Section), to lead the chil- some of the Raspberry pi’s many event: dren through various Snap Circuits® uses, like a looping animation pro- activities, which included electric gram written with Scratch (one of light switch, DC motor, and light- the entry-level programming lan- emitting diode experiments. With guages standard with the unit), an the assistance of EDS staff Joyce LED light show, and how to add Lombardini , Kellie Gilbert and Chris photo/video capability with a simple Jannuzzi, our volunteers organized camera attachment. With that last and presented the first-ever and camera demo, the Raspberry ‘selfie’ highly successful EDS-ETC work- was launched, with children clamor- shop at IEEE. ing to be the next in line. A special surprise was Fernando’s The positive feedback received demonstration of the Raspberry pi, from parents and children proves Teamwork, building a sound-activated light a single-board computer that stimu- once again the value of this pro- lates the teaching of basic computer gram. We want all our volunteers to
Fernando (from left), secretary of the IEEE Electron Devices Society, shares a trick Pictured with EDS’s Kellie Gilbert (right), IEEE Society volunteers with Michael and Raymond Jannuzzi , and Fernando Guarin (left) and Nagi Naganathan Anthony Riello
26 IEEE Electron Devices Society Newsletter ❍ July 2015 2015 EDS AWARD WINNERS AND 2016 CALL FOR NOMINATIONS
CALL FOR NOMINATIONS 2015 EDS CHAPTER OF THE YEAR AWARD
The EDS Chapter of the Year Award is given each year based on the quantity and quality of the activities and programs implemented by the chapters during the prior July 1st–June 30th period.
At the June 2012 EDS BoG (AdCom) Meeting, the BoG (AdCom) approved to increase the number of awards we give out in a given year, starting with the 2013 Award. We will award one Chapter from each of the following Regions:
• Regions 1-7 • Region 8 • Region 9 • Region 10
Nominations for the awards can only be made by SRC Chairs/Vice-Chairs, or self-nominated by Chapter Chairs. Please visit the EDS website to submit your nomination form (http://eds.ieee.org/chapter-of-the-year-award.html).
Each winning chapter will receive a plaque and check for $500 to be presented at an EDS Conference or Chapter Meeting of their choice. Travel reimbursement will not be provided.
The schedule for the award process is as follows:
Action Date
Call for Nominations E-Mailed to Chapter Chairs, SRC Chairs & SRC Vice-Chairs June 1st Deadline for Nominations September 15th Regions/Chapters Committee Selects Winners Early-October Award given to Chapter Representative at requested conference Open
CALL FOR NOMINATIONS 2014–2015 IEEE ELECTRON DEVICES SOCIETY REGION 9 BIENNIAL OUTSTANDING STUDENT PAPER AWARD
Description: Awarded to promote, recognize, and support meritorious research achievement on the part of Re- gion 9 (Latin America and the Caribbean) students, and their advisors, through the public recognition of their published work, within the Electron Devices Society’s field of interest: All aspects of the physics, engineering, theory and phenomena of electron and ion devices such as elemental and compound semiconductor devices, organic and other emerging materials based devices, quantum effect devices, optical devices, displays and imaging devices, photovoltaics, solid-state sensors and actuators, solid-state power devices, high frequency de- vices, micromechanics, tubes and other vacuum devices. The society is concerned with research, development, design, and manufacture related to the materials, processing, technology, and applications of such devices, and the scientific, technical and other activities that contribute to the advancement of this field.
July 2015 ❍ IEEE Electron Devices Society Newsletter 27 Prize: A distinction will be conferred in the form of an Award certificate bestowed upon the most outstand- ing Student Paper nominated for the two-year period. The prize will be presented at either the International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) or the Symposium on Microelectronics Technology and Devices (SBMicro). In addition to the recognition certificate, the recipient will receive a subsidy of up to $1,500 to attend the conference, where the award is to be presented. There will be a formal announcement of the winner in a future issue of the EDS Newsletter. The winner will also receive up to three years of complimentary IEEE and EDS student membership, as long as winner remains eligible for student membership.
Eligibility: Nominee must be enrolled at a higher education institution located in Region 9. In the case of a co- authored paper, only eligible co-authors may be nominated. Papers should be written in English on an electron devices related topic. Papers should have been published, in full-feature form, during 2014-2015 in an interna- tionally recognized IEEE sponsored journal or conference in the field of electron devices related topics. State- ments by the student and by the faculty advisor should accompany the nomination. Nominator must be an IEEE EDS member. Previous winners of this award are ineligible. There must be a minimum of five nominations submitted in order for the award to be administered for that year.
Basis for Judging: Demonstration of Nominee’s significant ability to perform outstanding research and report its results in the field of electron devices. Papers will be judged on: technical content merit, originality, structure, clarity of composition, writing skills, overall presentation. These criteria will be weighted by the assessment of the nominee’s personal contribution and the linkage of the nominated work to the nominee’s career plans.
Nomination Package: • Nominating letter by an EDS member (it may be the faculty advisor) • A brief one-page (maximum) biographical sketch of the student • 1000 words (maximum) statement by the nominated student describing the significance and repercussion of the nominated work within the wider scope of the nominee’s career plans • 400 words (maximum) statement by the faculty advisor under whose guidance the nominated work was carried out. It should unmistakably state the faculty advisor’s support of the nomination, and clearly explain the extent of the nominated student’s contribution, as well as its relevance for the overall success of the re- ported work. • A copy of the published paper
Timetable: • Nomination packages are due at the EDS Executive Office no later than 15 February 2016. • Nomination packages can be submitted by mail, fax or e-mail, but a hard copy must be received at the EDS Office • Winners will be notified by 15 March 2016. • Recipients may choose to have the formal presentation of the award at either one of the conferences: ICCDCS 2016 or SBMicro 2016
Send completed package to: IEEE Operations Center EDS Executive Office EDS R9 Outstanding Student Paper Award 445 Hoes Lane, Piscataway, NJ 08854 USA
For more information contact: Laura Riello, EDS Executive Office [email protected] or 732-562-3927
28 IEEE Electron Devices Society Newsletter ❍ July 2015 Y OUNG P ROFESSIONALS
REFLECTIONS FROM EDS YOUNG PROFESSIONALS
We are initiating a new series in has played an active role in organiz- they organized throughout the year the EDS Newsletter called “Reflec- ing seminars and invited talks by dis- at Nanyang Technological University tions from Young Professionals”. tinguished lecturers which provide a (NTU). There were several seminars The Newsletter Editor will be in- great opportunity for young people not just on topical areas, but also on terviewing Young EDS Professionals like me to learn, understand and in- general interest themes such as re- to get their opinion and feedback on teract with the big minds of the field. sume writing, tips for succeeding in our society as well as how our pro- I drew a lot of inspiration from many interviews, good approaches to write fessional body helps and supports of these seminars, which gave me the scientific journals etc… The happiest them in developing their career. drive to pursue academic research as moment I had was when I was invited The first part of this series is an a career. I am now close to becoming to be a reviewer for the first time by interview with an outstanding Young a Senior Member of IEEE as this is my the IEEE Transactions on Device and EDS Professional, Dr. Nagarajan tenth year of membership and I very Materials Reliability (TDMR) during Raghavan, currently a post-doctoral much look forward to working hard to my undergrad days. All these events fellow at MIT who will be joining receive the “Fellow” title in the future got me really excited to be a full- Singapore University of Technology many years down the road. The EDS fledged member of this organization. and Design (SUTD) soon as a faculty society has been very active in Singa- member. He was a recipient of the pore not just in organizing seminars, Editor: As a Professional, how do EDS PhD Student Fellowship in 2011. but also in promoting research, fund- you position your interest in your M K Radhakrishnan, Editor-in ing symposiums, recognizing young own field with the activities and ser- Chief of EDS Newsletter has inter- research talents through the Masters / vices you perform as an EDS mem- viewed Nagarajan. Excerpts of the PhD student fellowship awards and ber/volunteer? interview are given here in a ques- serving as a forum for active relevant Nagarajan: My field of work can be tion and answer format. job hunt in this area. What I like most summarized as “reliability modeling about EDS is its sincere intention to and physics of failure of semiconduc- Editor: As a young professional in reach out to many educational institu- tor logic and memory devices”. As a the early age of your professional tions even in the less known regions young professional, I have been an career, why do you consider the of large countries such as India and active reviewer for several IEEE jour- membership in IEEE and especially China. In short, I have cherished being nals such EDL, TED and TDMR over in EDS is important? an IEEE member and I look forward to the past 5-6 years. I was also part of Nagarajan: playing a more active role and in con- the technical program review commit- IEEE is a big orga- tributing to the best of my abilities in tee for the IPFA, ESREF and IRPS sym- nization with a re- serving the organization in the future. posiums. I have been invited to serve puted history and as the Technical Co-Chair for the IPFA extensive mem- Editor: What was the specific temp- 2016 symposium to be held in Singa- bership networks tation, if any, which made you to join pore next July. My activities in IEEE all around the this largest professional organiza- and role as a reviewer and conference world. As a young tion in the globe, at first? organizer are very much related to my Nagarajan Raghavan professional, I was Nagarajan: I have heard a lot field of work on reliability and failure interested to get myself associated to about the prestige and reputation analysis. I have gained a lot through this network as it gave me pride in be- associated with IEEE from my own these activities as it has given me a ing a part of a reputed organization. father, who is in the technical line big network of collaborators both in With the events and seminars orga- of electronics and communications. the academia and the industry. nized by the EDS society in Singapore I remember his sharing of experi- where I was pursuing my undergrad- ences on how being a part of IEEE Editor: What are your thoughts uate studies and given its relevance is itself a recognition wherever you about the EDS membership and its to my interest in semiconductor phys- go. I could sense the vibrant nature paybacks? Whether the EDS mem- ics, I very much wanted to be a part of the IEEE society during my under- bership benefited you at any time in of the EDS community as well. EDS grad studies from the various events your career growth?. If so, how?
July 2015 ❍ IEEE Electron Devices Society Newsletter 29 Nagarajan: The EDS membership come up with technology solutions play a big role in the advancement of has been very rewarding to me over for the underdeveloped world, aged one’s career in the field of semicon- the years. Other than the access to people, physically challenged people ductors and nanotechnology. EDS based journals, the EDS news- etc. This could be in the form of new letter itself is a rich resource to keep low cost sensors, actuators, that Nagarajan Raghavan is currently pur- track of the various EDS seminars people can afford as well as design suing his joint post-doctoral fellow- and events that are being held in the for low-cost solar panels that can ship at the Singapore University of Asia-Pacific region (Region 10). The be self-cleaning etc… Given that the Technology and Design (SUTD) and newsletter provides additional infor- interests of EDS span across mate- Massachusetts Institute of Technol- mation on upcoming symposiums as rials, process, devices and circuits, ogy (MIT). He will soon be joining well. I have attended several distin- people affiliated to this society are in SUTD as an Assistant Professor in guished lecturer (DL) talks on a vari- the best position to leverage on each the Engineering Product Develop- ety of topics and they have been very other’s expertise to realize new tech- ment (EPD) pillar starting AUG 2015. insightful and enriching as the topics nology innovations that are reliable, Prior to this, he was a post-doc at dealt with are the latest relevant ones low cost and of good performance. the Interuniversity Microelectronics to the semiconductor industry. The Perhaps, the IEEE EDS society should Center (IMEC) in joint association EDS membership also helps me stay launch its own research grant calls with the Katholieke Universiteit Leu- connected with other fellow commu- for different geographical regions for ven (KUL), Belgium. He obtained his nity members in other parts of the young researchers (post-docs and ju- Ph.D. (Microelectronics, 2012) at the globe and it has been an effective nior faculty) to pursue their dreams Division of Microelectronics, Nan- medium for me to find active collab- and prototype, validate and imple- yang Technological University (NTU), orators to complement my statistical ment new ideas. Also, I would like to Singapore and S.M. (Advanced Ma- research work with the right experi- see the EDS society having greater terials for Micro & Nano Systems, ments and atomistic simulations. interaction in the form of joint sym- 2008) and M.Eng (Materials Science posiums, interdisciplinary seminars and Engineering, 2008) from Nation- Editor: As an YP, how do you consider and workshops with other relevant al University of Singapore (NUS) and the ED Society as a whole and what societies such as the Reliability So- Massachusetts Institute of Technol- are the changes or developments ciety, Circuits and Systems Society, ogy (MIT), Boston respectively. His you would like to see in evolving this Signal Processing Society as well as work focuses on statistical charac- professional body as a group devot- the Solid-State Circuits Society. terization and reliability modeling of ed to the humanity and its causes? dielectric breakdown and resistance Nagarajan: I think the EDS society Editor: What are your suggestions switching in novel high-l dielectric has been progressing very well over and recommendations for those material based logic and memory the last few years like never before young professionals who may aspire device stacks. His other research in- and it is getting increasingly vibrant to join EDS? terests include random telegraph and spreading its wings to reach out Nagarajan: The EDS society pro- noise, prognostics for nanodevices, to more young professionals and vides a good platform for young pro- design for reliability and reliability semiconductor enthusiasts in all fessionals to learn more, interact with statistics. He is the Asia-Pacific re- geographical regions. The website of the community, establish networks, cipient for the IEEE EDS PhD Student the EDS has also been very informa- be informed of the latest develop- Fellowship in 2011 and the IEEE Re- tive and resourceful. I would like to ments, realize their potential talents liability Society Graduate Scholar- see the EDS society encourage the and implement their ideas. On the ship Award in 2008. To date, he has community and provide several av- whole, it plays a key role in bringing authored / co-authored close to 100 enues for young researchers to work together a large group of people with international peer-reviewed publica- on new topics that are very much diverse backgrounds to work for the tions and four invited book chapters needed for the future such as low advancement of semiconductor de- as well. He also holds a US patent as cost technology for the under-devel- vices. Given its vibrant nature and a co-inventor for using CMOS plat- oped or developing countries. Rather active involvement and support for form to fabricate RRAM devices. He than purely focusing on theoretical technical activities, I see no reason has served on the review committee advances and Moore’s law based why anyone should be reluctant to for various IEEE journals and con- scaling progression, the EDS society join the EDS. There is much more to ferences including IRPS, IIRW, IPFA, should introduce more awards and EDS than the affordable membership ISDRS and ESREF. He is currently a call for proposals for young profes- fee and conference discounts as an Member of IEEE (2005-present) and sionals who can make use of their IEEE member. If the EDS membership was an invited member of the IEEE device and process knowledge to privileges are well utilized, it could GOLD committee (2012–2014).
30 IEEE Electron Devices Society Newsletter ❍ July 2015 IEEE YOUNG PROFESSIONALS—AN EXCITING NEW REBRANDED OUTLOOK
BY ISHAN SHARMA ([email protected])
What is IEEE these work-streams. Let’s dig deeper event kits will be available through Young Profession- into each of these initiatives. the MGA or YPP committee. als? IEEE Young Collabratec™ is an online global The Corporate Sponsorships ini- Professionals Pro - collaboration environment that of- tiative aims to get companies to gram (YPP) is the fers networking, vibrant communi- sponsor conferences and meetup rebranded succes- ties, world class publishing, and events giving the attendees chances sor of IEEE GOLD unique features including Q&A fo- to network with local, multinational, (Graduates Of the rums and private research spaces! small and large businesses, while Last Decade). If you graduated with This allows the perspective to move providing the companies with adver- your first degree within the last 15 beyond the organizational unit to the tising and recruiting opportunities. years, then you are automatically individual. Better yet, Collabratec™ Since pathways for large businesses part of YPP with the option of partici- will be available to the IEEE mem- are already established, the focus of pating beyond this timeframe. With bership in the summer of this year! this team is on smaller companies these changes and a 77,000-strong The goal of the Global Entrepre- and startups. membership, there is renewed ener- neurship Program is to provide re- We, at EDS, can be an integral gy in the young professionals’ com- sources to budding entrepreneurs part of each of these IEEE Young Pro- munity to continue to transform IEEE within the IEEE, mentorship with fessional initiatives – by contributing into an intellectual and social hub experienced entrepreneurs and in- articles to the EDS community on that fosters collaboration and net- cubation opportunities. The first of- Collabratec™, volunteering as en- working at a global scale to achieve fering of the GEP will be an online trepreneurship mentors, participat- IEEE’s mission. portal with resources to get started ing in the GEP, setting up YP events, I got my first glimpse into these with entrepreneurship. So if you are booths and talks at the EDS confer- exciting initiatives at the IEEE YPP just starting out or already a sea- ences, and contributing to the corpo- Committee Meeting in Panama in soned entrepreneur, look for com- rate sponsorship program. early May 2015. During this meeting, munications from the GEP! My experience at the IEEE Young the focus was on globally organized The Leadership and Volunteer Professionals Program Committee efforts for a local impact. In 2015, the Portal will feature a new re-designed Meeting showed me the energy and YPP committee is focusing on four website to enable the local volun- commitment we, the young profes- work-streams: (1) Collabratec™, (2) teers to reach out to young profes- sionals, are investing as a team to Global Entrepreneurship Program sionals at events in their IEEE Re- make both a global and local impact (GEP), (3) Leadership and Volunteer gion. The goal is to use major events through the IEEE organization. If you Portal, and (4) Industrial Relations and conferences to create or revital- would like to be a part of this exciting and Sponsorships. Each attendee of ize local young professional affinity effort, please email me at sharmai@ this meeting was assigned to one of groups. Branding and multi-purpose ieee.org.
Attendees of the 2015 IEEE Young Professionals Committee Meeting
July 2015 ❍ IEEE Electron Devices Society Newsletter 31 REGISTER NOW FOR UPCOMING EDS WEBINARS!
Terahertz Electronics for Sensing 1 THz and close to 0.5 GHz for InGaAs energy generation. The improved ef- Applications and Si technologies, respectively). A ficiency derived from IGBT-based au- Presented by: Dr. Michael S. Shur, new approach called plasma wave tomotive electronic ignition systems Rensselaer Polytechnic Institute electronics recently demonstrated has reduced gasoline consumption terahertz emission and detection in by 1.5 Trillion gallons over the last 25 Monday, July 27, 2015 GaAs-based and GaN-based HEMTs years. During this time span, adjust- 11:00 am–12:00 pm EDT and in Si MOS and SOI, including able speed motor drives and com- the resonant THz detection. Gra- pact fluorescent lamps have reduced Abstract: Terahertz sensing is en- phene and 2D materials “beyond electricity consumption by 73,000 abling technology for detection of graphene” have also emerged as TWhrs, which is equivalent to elimi- biological and chemical hazardous candidates for plasmonic THz de- nating construction of 1366 one-GW agents, cancer detection, detection tectors, modulators, and emitters. coal fired power plants. The social of mines and explosives, provid- Emerging THz electronic devices impact includes consumer cost sav- ing security in buildings, airports, have potential to revolutionize THz ings of more than $ 23 Trillion and and other public space, short-range sensing technology. carbon dioxide emission reduction covert communications (in THz and For more information and to reg- by over 100 Trillion pounds. sub-THz windows), and applica- ister, please visit the EDS website: This talk will review the evolu- tions in radioastronomy and space http://eds.ieee.org/webinars.html tion of the IGBT concept and pro- research. I will review the-state-of- vide examples of its applications the-art of existing THz sources, de- Engineering a Sustainable Society in various sectors of the economy. tectors, and sensing systems and with Power Semiconductor Devices The energy savings and carbon prospects for novel emerging devic- Presented by: Dr. Jayant Baliga, emission reduction enabled by the es enabling terahertz electronics for North Carolina State University IGBT will be quantified. In addition, sensing applications. Two-terminal the talk will describe enhancing semiconductor devices are capable Wednesday, August 26 the performance of silicon power of operating at the low bound of 11:00 am–12:00 pm EDT MOSFET products using the charge the THz range, with the frequencies coupling concept and achieving a up to a few terahertz achieved us- Abstract: Power semiconductor de- quantum leap in power device per- ing Schottky diode frequency mul- vices are an embedded technology formance with emerging wide band tipliers. High-speed three terminal hidden from the eyes of society. Sili- gap semiconductor based power electronic devices (FETs and HBTs) con IGBTs are now used in all the ma- devices. are approaching the THz range (with jor sectors of our economy including For more information and to reg- cutoff frequencies and maximum transportation, consumer, lighting, ister, please visit the EDS website: frequencies of operation above industrial, medical, and renewable http://eds.ieee.org/webinars.html
NEW WEBINARS AVAILABLE IN THE ARCHIVE
As part of our commitment to en- Anthony Ven Graitis, IEEE Intellec- Technology, Engineering and Math hancing the value of membership in tual Property Rights Specialist. (STEM) and she covers the things EDS, we are pleased to invite you to To view these and any past about the camp that spark an inter- view a special webinar hosted by our events, please visit the EDS Webinar est in physics. The data shows that friends in the IEEE Solid-State Cir- Archive at, http://eds.ieee.org/webi- the summer program translates cuits Society (SSCS) entitled, Phys- nar-archive.html into the participants having more ics is tough, but girls are tougher, self-confidence, better grades and a presented by Wanda Gass. Physics is tough, but girls are tougher higher percentage of young women Another important topic, Pla- Presented by: Wanda Gass, receiving a STEM degree in college. giarism Detection and Prevention: IEEE Fellow Speaker Biography: Wanda Gass Crosscheck Overview was covered Abstract: In this talk, Wanda Gass graduated from Rice University by Bill Hagen, IEEE Senior Manag- examines the business case for why with a BS in Electrical Engineer- er Intellectual Property Rights, and we need more women in Science, ing in 1978 and received an MS in
32 IEEE Electron Devices Society Newsletter ❍ July 2015 Biomedical Engineering from Duke In this webinar, plagiarism is ex- Background Info: IEEE began offer- University in 1980. She worked at amined in the era of electronic pub- ing CrossCheck as an optional tool Texas Instruments for 32 years be- lishing and demonstrates tools the for publication volunteers to use in fore retiring in 2012. Wanda is an IEEE provides volunteers to help early 2009. As it became clear that IEEE Fellow for her pioneering work them identify similarities that ex- CrossCheck could be a valuable in the development of TI’s first Digi- ist between recently submitted quality check for content going into tal Signal Processor (DSP). In 2014 manuscripts and other previously Xplore, the Publication Services and she founded Design Connect Create, published papers. One such tool is Products Board (PSPB) and Board a nonprofit focused on expanding CrossCheck. of Directors approved policy in No- the reach of a successful program Bill Hagen, Senior Manager, IEEE vember 2012 that mandated the use in Dallas to other schools districts Intellectual Property Rights (IPR), of CrossCheck in all publications. across the country. presents an overview of CrossCheck, Because most IEEE periodicals are what it is, and why we use it. He ex- handled through ScholarOne Manu- Plagiarism Detection and Preven- plains how volunteers can access scripts, CrossCheck was integrated tion: CrossCheck Overview CrossCheck, either through a vendor in their submission system, and Presented by: Bill Hagen & Anthony system that has the tool integrated, in February 2013 they began auto- VenGraitis or through the IEEE CrossCheck Por- matically uploading all manuscripts Abstract: Publishing and author- tal, which is available to all publica- to CrossCheck at submission. This ship in the digital age is a dynamic, tion volunteers. In addition, Hagen saved time and effort for the editors, ever-changing proposition. With all provides a demo on how to use the who previously had to initiate the the benefits these technological ad- CrossCheck Similarity Reports that upload manually. In April 2013, the vancements offer, they create some are issued for all manuscripts sub- IPR Office launched the CrossCheck new challenges as well. Chief among mitted through the system, explain- Portal. This allowed all publication these is the ease with which original ing how to interpret the Similarity volunteers to access CrossCheck and work can now be copied (either le- Report results and how to determine helped connect staff support to vol- gitimately or otherwise). if CrossCheck detected a problem. unteers’ use of the tool/service.
REPORT FROM THE IEEE ED COIMBATORE CHAPTER PROGRAM
On March 25th, the IEEE ED Co- ence the exciting and creative field imbatore Chapter and the IETE of electronics. Student Forum KARUNYA Univer- The Students were given a sity, jointly organized a hands-on chance to get comfortable with training session for Elenco Snap the Elenco kit and later would Circuits® kits as part of the Engi- be given a chance to demon- neers Demonstrating Science: an strate the same to kids in various Engineer Teacher Connection (EDS- schools nearby, thereby encour- ETC) program. age them to consider electrical The goal of the program is to en- and electronic engineering as a able IETE chapter members to visit career. local schools or host events de- Students who took part in the signed to engage young students training were so excited about in the field of electrical engineer- the program and are looking for- ing. By utilizing the easy-to-use ward for further development in Elenco Snap Circuits® kits, students the same. A few photos of student learn about electronic circuits using members working with the kits are a “hands-on” approach to experi- included in this report.
July 2015 ❍ IEEE Electron Devices Society Newsletter 33 C HAPTER N EWS
IEEE EDS MINI-COLLOQUIUM, WIMNACT 45—YOKOHAMA
The IEEE EDS Mini-Colloquium, WIM- After lunch, there were 6 lectures: All the above lectures are regarding NACT-45, was held at Tokyo Institute K. Tsutsui, TIT, “Ohmic contacts for- the frontier of the electron device of Technology, Yokohama, Japan, on mation on AlGaN/GaN HEMTs by technologies, and the participants February 19, 2015. After the greet- introducing uneven AlGaN layer were satisfied the high level of the ings of T. Mogami, ED Japan Chapter structures;” K. Kakushima, TIT, talks.
Chair, S. Deleonibus, Leti and H. Iwai, “Resistive switching of CeOx/SiO2 After the lectures, there were 31 TIT, there were five lecturers who stacked film based on anodic oxi- poster presentations by students and gave the following talks: S. Deleoni- dation and breakdown;” T. Moga- young researches, followed by a re- bus, “Future Heterogeneous Device mi, PETRA, “Positive for Silicon;” ception, providing opportunities for and System Process Technology;” Z. Tang, Dalian University of Technol- them to interact top-level scientists in T. Ernst, Leti, “Nanoelectromechanical ogy, “Some Researches of Thermal the world. systems, paths for co-integration with Problem in 3D ICs;” H. Wong, City CMOS;” M. Casse, Leti, “Advanced de- University of Hong Kong, “Thermal T. Mogami vices: Toward ultimate scaled Nanow- Annealing and Interface Reaction ED Japan Chapter Chair ire Transistors;” H. Iwai, TIT, “Future of Lanthanum-based Subnanome- of Electron Devices technologies;” ter EOT Gate Dielectrics;” S. Dong, H. Iwai H. Wakabayashi, TIT, “Two dimen- Zhejiang University, “ESD protec- EDS Region Chapter Committee sional material device technologies.” tion of nanometer CMOS process.” Member
Attendees of WIMNACT-45 held at Tokyo Institute of Technology
REPORT ON THE IEEE EDS MINI-COLLOQUIUM ON NANOMETER CMOS TECHNOLOGY, SHENZHEN
The 46th Workshop & IEEE EDS Chair of the IEEE ED/SSC Beijing • “Compact Modeling for High- Mini-Colloquium (MQ) on Nanome- Section Shenzhen chapter. It is then Power Circuit Design and Its ter CMOS Technology (WIMNACT-46) followed by technical presentations Application,” by Prof. Mitiko was organized by IEEE ED/SSC Bei- are given by four EDS Distinguished Miura-Mattausch, Hiroshima jing Section Shenzhen Chapter at Lecturers. The title of their presenta- University the PKU Graduate School Shenzhen tions are given below: • “A Unified Compact Model for Campus on April 18, 2015. • “Carbon Nanotube Interconnect Generic HEMTs,” by Prof. Xing The event started with a welcome Vias,” by Prof. Cary Yang, Santa Zhou, Nanyang Technological by Prof. Xinnan Lin, the Chapter Clara University University
34 IEEE Electron Devices Society Newsletter ❍ July 2015 • “Microelectrode Array for Over 50 local students and pro- Seventeen student posters were Communication Between Sil- fessors attended the MQ and there put on display. One Best Student icon Chips and Living Cells,” are lively interaction between the Poster Award and three Outstand- by Prof. Mansun Chan, Hong speakers and the audiences. ing Student Awards were given out Kong University of Science & A student poster competition at the event. Technology is also co-organized with the MQ.
Attendees of WIMNACT-46 held at PKU Graduate School Shenzhen Campus
ED NIST STUDENT CHAPTER ORGANIZES THE 4TH IEEE EDS MINI-COLLOQUIUM
The IEEE ED NIST Student Chapter balpur University, Prof. C K Sarkar, students, faculty and research schol- organized the 4th IEEE EDS Mini- Jadavpur University, and Prof. M K ars from various institutions. Colloquium on February 20, 2015. Radhakrishnan from Nanorel, Ban- Prof. Subir Kumar Sarkar, Jadavpur galore, were the speakers of the MQ, Ajit K Panda University, Prof. G N Dash, Sam- which was attended by nearly 236 ED NIST Student Chapter Chair
Attendees of the ED NIST Student Chapter’s 4th IEEE EDS Mini-Colloquium
July 2015 ❍ IEEE Electron Devices Society Newsletter 35 ED DELHI CHAPTER ORGANIZES MINI-COLLOQUIA ON COMPACT MODELING TECHNIQUES
–by Mridula Gupta and Dr. M.K. Radhakrishnan, NanoRel, Manoj Saxena Bangalore, India, discussed the Analysis, Challenges and Reliabil- The ED Delhi Chapter organized a ity in Si Nano Devices; Professor Mini Colloquia on “Compact Mod- Souvik Mahapatra, Department of elling Techniques for Nanoscale Electrical Engineering, Indian Insti- Devices and Circuit Analysis” on tute of Technology Bombay, Mum- January 13, 2015, which was at- bai, India, discussed Macroscopic tended by over 100 students and and Stochastic Aspects of Nega- faculty members. Professor Anisul tive Bias Temperature Instability in Haque of the Department of Elec- CMOS Devices and Circuits, and the trical and Electronic Engineering, last talk was delivered by Professor East West University, Dhaka, Ban- Gana Nath Dash, School of Phys- gladesh, gave his talk on “Quantum ics, Sambalpur University, Odisha, mechanical effects in surface poten- India on the topic “Modeling Issues tial based MOS compact models;” with Graphene FETs”.
Attendees of the ED Delhi Chapter Mini-Colloquia
36 IEEE Electron Devices Society Newsletter ❍ July 2015 R EGIONAL N EWS
USA, CANADA The talk pre- ing the workshop experience. And sented a pro- the scope was extended from non- & LATIN AMERICA posed solution to volatile memory technology and de- (REGIONS 1–6, the serious prob- sign, which had been successfully lem of unit cell discussed in more than 30 years of 7 & 9) size minimization, NVSMW, to the other memory tech- encountered as nologies, which were the focus of IC- ED/MTT Orange County phased arrays ap- MTD. The IMW is a unique forum for Dr. Hermann –by Héctor J. De Los Santos plications move specialists in all aspects of memory Schumacher into the millime- (non-volatile & volatile) microelec- The Orange County, California’s EDS/ ter-wave range. In particular, a so- tronics and people with different MTT Joint Chapter was honored lution where four vector modula- backgrounds who wish to gain a on January 29, 2015 with the visit tors are placed on a single Si/SiGe better understanding of the field. At- of Prof. Dr. Hermann Schumacher, BiCMOS chip, which also contains tended by more than 200 people ev- Director of the Institute of Electron mixed-signal electronics to control ery year, the morning and afternoon Devices and Circuits, University of phase and magnitude via a common technical sessions are organized in Ulm, Germany. Prof. Dr. Schumacher I2C serial interface, was discussed. a manner that provides ample time presented the talk “Si/SiGe BiCMOS In this approach, the signal path for informal exchanges amongst pre- Transceiver ICs for a Ka-band Active- through the vector modulators can senters and attendees. ly Steered Reflect Array Antenna.” be reversed to allow transmit and This year’s program included a Hermann Schumacher received receive operation, and reconfigura- one-day short course chaired by his doctorate in engineer ing (Dr.- tion is achieved using MOS switches Pei-Ying Du from Macronix, with Ing.) degree from RWTH Aachen, and, in one version, also with an RF lectures on the reliability of Flash Aachen, Germany, in 1986. From MEMS SPDT switch, which is tightly based Solid-State-Drives, database 1986 to 1990, he was a member of integrated into the backend of line technologies for Non-Volatile RAM, technical staff at Bellcore, Red Bank, (BEOL) of the underlying BiCMOS 3D-DRAM, ReRAM and 3D Vertical New Jersey, working on long-wave- technology. NAND Flash. The IMW program also length fiberoptic receivers and on For additional information con- included an interesting panel dis- early InP-based heterojunction bi- tact Dr. Héctor J. De Los Santos at cussion addressing the remarkable polar transistors. In 1990, he joined [email protected]. question—Future of Memory: Appli- Ulm University, Ulm, Germany as cation-driven or Technology-driven, professor in the Institute of Electron 2015 IEEE 7th International which will dominate in the new era Devices and Circuits. His research Memory Workshop (IMW) of computing?—followed by a post- interests cover heterostructure de- Summary er session with a reception banquet vices (at present, most Si/SiGe HBTs –by Agostino Pirovano sponsored by Applied Materials. and AlGaN/GaN HFETs) and their ap- The single-track conference plication in microwave and millime- The seventh IEEE International spanned three days, including a half- ter-wave circuits. Prof. Schumacher Memory Workshop (IMW) was held day invited talks session given by was the founder of one of the first at the Hyatt Regency, Monterey, experts in the memory field—Sung- English taught Master programs in California from Sunday May 17th Kye Park (SK-Hynix), Will Akin (Mi- electrical engineering in Germany through Wednesday May 20th, 2015. cron), Dale Juenemann and Prasad and, for 17 years until June 2014, its Although it is the seventh IMW meet- Alluri (Intel), Barbara DeSalvo (CEA- director. He served as Vice President ing to be held this year, it has a long LETI), Thomas Jew (Freescale), and for Research for Ulm University from history of Non-Volatile Semiconduc- Shinobu Fujita (Toshiba) - providing 2000–2003, and is now, in addition tor Memory Workshops (NVSMW) an exciting overview of the main to his institute appointment, also the dating back to 1976. In 2008, NVSMW trends for memory technologies and director of Ulm University’s School and the International Conference on applications. The IMW is also an ex- of Advanced Professional studies, Memory Technology and Design (IC- cellent forum to present new and which develops continuing educa- MTD) merged to incorporate both original technical works and this tion Master programs, a new strate- the volatile and non-volatile memory year technical program comprised gic direction for Ulm University. aspects in one forum while maintain- 32 excellent papers selected by the
July 2015 ❍ IEEE Electron Devices Society Newsletter 37 technical committee among more than 65 papers submitted and cover- ing the major categories of memory technologies (RRAM, NAND DRAM, emerging technologies) and applica- tions (SSD, eNVM, e-MMC). Among the most exciting news presented at the conference, a selector for high density resistive RAM applications, a procedure to reduce cell variation in PCM multi-level applications, a machine learning prediction for en- hancing the endurance in ReRAM SSD System, and a triple protection structured COB FRAM capable of 1017 endurance. IMW was also selected for host- ing the presentation of the 2015 IEEE Reynold B. Johnson Information Participants of EDS Mexican Chapters Meeting Storage Systems Award, an IEEE Technical Field Award presented to individuals for outstanding contri- by Jacobus Swart (SRC Region 9 a special session of the ROPEC butions to information storage sys- Chair), and Fernando Guarin (EDS 2015 (International Autumn Meet- tems, with emphasis on computer Secretary), to hold a meeting of the ing on Power, Computing and storage systems. During the IMW Mexican EDS chapters, exchanging Electronics). This is intended to social dinner, the 2015 IEEE Division opinions and defining future ac- be a forum for experts in the Director for Region 6, Tom Coughlin, tions to boost EDS activities in the field. awarded D. Moran, A. Ban and S. country. • To continue organizing the Litsyn “for pioneering contributions After a warm welcome by Roberto ICCDCS (International Caribbe- to storage systems based on Flash Murphy and a general presentation an Conference on Circuits, Devic- memory.” of Region 9 activities by Jacobus es and Systems); the 2016 edition The next IMW will be held in May Swart, several issues related to EDS is going to be held in Cancún, 2016 in Europe. For more details activities were discussed, such as: México. on the IMW conference please visit how to increase the interaction be- ~Joao A. Martino, Editor the IMW website http://www.ewh. tween different EDS chapters and ieee.org/soc/eds/imw/. IMW techni- members increasing our presence cal proceedings are available on the and activities in EDS. EUROPE, MIDDLE IEEE Xplore database. The most important agreements ~Adam Conway, Editor on concrete actions were: EAST & AFRICA • The creation of a short course on (REGION 8) ED Mexican Chapters Electronic Devices using the facil- –by Arturo Escobosa ities of INAOE. Part of the funds assigned to Region 9 SRC can ED IRE NASU-Kharkiv Student On February 20–21, 2015, an EDS be used to support participant´s Branch Chapter Mexican Chapters’ Meeting was travel expenses. Brazil has a suc- In accordance with the website http:// held at the facilities of INAOE in cessful program in this line. ewh.ieee.org/sb/ukraine/ire-kharkiv/ Tonantzintla, a small village near • Increase the participation in the chapters/eds/index.php the Chap- Puebla in México. INAOE is a re- EDS-ETC program. To start, an in- ter is going to make in June, 2015, nowned research center focusing duction workshop is to be hosted a trip to the Experimental Center of in Astrophysics, Optics, Electronics by the Instituto Tecnológico de Institute of Ionosphere of Ministry of and Computer Science, which was Morelia Student Branch Chapter. Education and Sciences & National founded in 1971. The intention is to involve all Mex- Academy of Sciences of Ukraine. The Participants from Veracruz, Mo- ican EDS chapters in the program. Institute houses one of the world relia, México City, and Puebla, took • To organize the Workshop of Ad- largest incoherent radar experimen- advantage of the visit to INAOE vanced Devices and Materials as tal facilities.
38 IEEE Electron Devices Society Newsletter ❍ July 2015 MTT/ED/AP/CPMT/SSC West The most interesting works were ceived the opportunity to present the Ukraine Chapter reported at the plenary sessions. results of their research, as well as –by Mykhaylo I. Andriychuk Prof. Alexander Zemliak, University to receive knowledge from their ex- of Puebla, Mexico, presented a gen- perienced colleagues. The wonderful The IEEE MTT/ED/AP/CPMT/SSC eral strategy for development and scenery of the Carpathian Mountains West Ukraine Chapter was a co- optimization of ICs and electronic contributed to the fruitful Conference. organizer of the 13th International devices. Based on this approach the Conference “The Experience of De- design problem is reduced to ana- ED/AES/AP/MTT/GRS/NPS signing and Application of CAD Sys- log network design with a minimum East Ukraine Chapter tems in Microelectronics” (CADSM computer time and is formulated In accordance with the web- 2015). The Technical Co-Sponsorship in terms of functional minimization site http://www.rocket.kharkov. from the IEEE Ukraine Section and problem of the control theory. A con- ua/~euachapter/ the Chapter co-orga- from the Chapter was provided for cept of the Lyapunov function was nized in the second half of 2014 two the event. The Conference was held proposed to analyze the behavior of events. The 15th International Con- on February 24–27, 2015, in the beau- the design process. ference on Mathematical Methods in tiful resort village Polyana Svalyava, The active discussion was stimulat- Electromagnetic Theory was held on Zakarpattya, Ukraine. ed also by Prof. Jan Dziuban, Wroclaw August 26–28, 2014 in Dnipropetro- More than 160 papers were sub- University of Technology, Poland. vsk, Ukraine IEEE. It was organized mitted for presentation at the Con- His talk was devoted to silicon MEMS by AP/MTT/ED/AES/GRS/NPS/EMB ference. Following a review, 136 pressure sensors in medical, automo- East Ukraine Joint Chapter in coop- papers from Iraq, Kazakhstan, Mex- tive, industrial, military equipment eration with IEEE APS, MTTS and ico, Poland, Russia, and Ukraine and in consumer devices, e.g. smart- EDS. The 4th Microwaves, Radar and were included in the Conference phones. The most commonly used Remote Sensing Symposium (MRRS- Program. piezoresistive and capacitive pressure 2014) was held on September 23–25, This year the following top- sensors cannot be used at harsh en- 2014 in Kiev, Ukraine. These sympo- ics were discussed: Modeling and vironment conditions: high tempera- sia integrate researchers, experts Optimization for Integrated Circuit ture, strong electromagnetic fields, and students who work in the aread Manufacturing, Models and Meth- ionizing radiation. In this case a new of electromagnetic theory and appli- ods for Microelectronic Device and pressure sensor design is required cations; microwaves; radar technol- System Design in Radio Electronics, including optical measurement tech- ogy, systems and signal processing; Models and Methods for Microelec- niques which are non-contact, non- remote sensing methods and data tromechanical Systems, Design of destructive, temperature insensitive processing. The MRRS-2014 sympo- Specialized Systems and Devices, and adaptive in harsh environment. sium was organized by IEEE SP/AES Optimal Design Problems, Testing Many young scientists, engineers, Ukraine (Kiev) Joint Chapter in col- and Reliability Issues, Modern Infor- students, and PhD students par- laboration with National Aviation Uni- mation Technology for CAD. ticipated in the Conference. They re- versity, Kiev, Ukraine.
CADSM-2015 Conference opening ceremony attendees
July 2015 ❍ IEEE Electron Devices Society Newsletter 39 IEEE ED/AES/AP/MTT/GRS/ Ukraine (IRE NASU). At the meetings DIPED-2014 was held at the Tbilisi NPS East Ukraine Chapter numerous engineering problems are State University, Georgia, on Sep- –by Nikolay Cherpak, Mikhail considered, e.g. theory of semicon- tember 22–25, 2014. It was organized Balaban, and Ganna Veselovska ductors, metals, and plasma as well by IEEE MTT/ED/AP/CPMT/SSC West as experiments and simulations re- Ukraine and MTT/ED/AP Georgia In 2015 the Chapter is a co-organiz- lated to electron devices. The com- Chapters in cooperation with Tbilisi er and co-sponsor of IEEE annual mittee plans to have at least 5 such State University (TSU) and Institute conferences, namely: meetings in 2015. of Applied Problems in Mechanics • The 35th International Confer- and Mathematics, NASU, Ukraine. ence on Electronics and Nano- ED/AP/MTT/COM/ IEEE APS, EDS, MTT-S, SSCS and technology, ELNANO 2015, at EMC Tomsk Chapter IEEE Section Ukraine provided the National Technical University of In accordance with the website technical co-sponsorship. Thanks to Ukraine “Kyiv Polytechnic In- http://chapters.comsoc.org/tomsk/ TSU financial support the number stitute”, April 21–24, 2015, Kyiv, en/events.html, the Chapter has the of attendees from outside of Geor- Ukraine; this event is intended to following events planned: gia were increased (Figure 1). Lo- bring together researchers from • Student Paper Contest and Con- cally the Workshop was organized by leading universities, research lab- ference on the Information Se- Prof. Revaz S. Zaridze, Chairman of oratories and industry working in curity (SIBINFO), April 14–15, the Organizing Committee, Dr. Tamar the areas of nanotechnology, bio- Tomsk, Russia; Gogua and Dr. Giorgi Ghvedashvili, medical electronics, signal pro- • International Siberian Conference IEEE MTT/ED/AP Georgian Chapter. cessing, power electronics, smart on Control and Communications The program consisted of 44 pa- grid and electronic systems. (SIBCON), May 21–23, Omsk, Rus- pers, including 5 invited talks. Scien- • International Young Scientists sia with a technical sponsorship tists from Georgia, Germany, Israel, Forum on Applied Physics, YSF of IEEE ED and MTT Societies; Pakistan, Poland, Russia, South Ko- 2015, at Oles Honchar Dnipro- A technical sponsorship of Tomsk rea, USA, and Ukraine presented petrovsk National University IEEE Chapter & Student Branch for their papers arranged in sections: September 29–October 2, 2015, both events is also acknowledged. Theoretical Aspects of Electrody- Dnipropetrovsk, Ukraine; the namics, Diffraction and Scattering, Forum is designed as a means ED/MTT Republic of Antenna Synthesis and Inverse Prob- stimulating interactions and col- Georgia Chapter lems, Novel Methods in Electrody- laboration (projects) and motivat- –by Tamar Gogua and Mykhaylo I. namics, Antenna Design, Analytical ing to move forward in science. Andriychuk and Numerical Methods, Acoustics Additionally, several times a year and Remote Sensing. the Chapter committee holds techni- The XIXth Edition of the Internation- Prof. Alexander G. Ramm (Kansas cal meetings at O. Ya. Usikov Institute al Seminar/Workshop “Direct and State University, USA), gave a talk on for Radiophysics and Electronics Inverse Problems of Electromag- theory of wave scattering by small of National Academy of Science of netic and Acoustic Wave Theory” bodies (particles). In his presentation,
DIPED-2014 participants at the opening ceremony
40 IEEE Electron Devices Society Newsletter ❍ July 2015 the mathematical foundations of SSCS and is looking forward to a and for other forms of collaboration electromagnetic wave scattering good collaboration. with the Chapter. theory for small impedance particles Since 2014 the main activities of ~Daniel Tomaszewski, Editor of an arbitrary shape were given. the Chapter have been focused on The report stimulated the active dis- a few technical meetings devoted to SIA ACIFIC cussion. Other presentations can be gated diodes in breakdown regime, A & P mentioned: “Base Station Antenna’s which demonstrate faster switching (REGION 10) EM Field Distribution in the Room operation than the MOSFETs (invit- with a Human Model Inside” by Ms. ed speaker—Al. Rusu, EPFL), to pin- Veriko Jeladze, “Comparing Different FET optimization for the telecommu- ED UCAS Student Chapter Approaches to Linear Antenna Syn- nication applications, to integrated –by Yang Li thesis Problems according to Power biosensors using active electronic Radiation Pattern” by Dr. Olena Bu- devices, to SOI devices, to new chal- ED University of Chinese Academy latsyk, and a talk on the electromag- lenges for Nano-Electronics. These of Sciences (UCAS) - Beijing Student netic analysis of a complex structure issues were partly presented during Branch Chapter, held a visiting tour cylindrical antenna by Prof. Guram the ED tour across Romania, includ- to BOE in Beijing on April 16th. BOE Kevanishvili. ing Bucharest, Iasi, Brasov, Timiso- Technology Group Co., Ltd., founded Many young scientists attended ara and Sinaia. in April 1993, is the world’s leading the Seminar. The following research- At the end of 2014 a new officer supplier of semiconductor display ers received the Best Young Speaker board of the Chapter was elected. technologies, products and services. Award: Ms. Veriko Jeladze, Dr. Olena More than 7 colleagues became It is among the top five companies Bulatsyk, Mr. Victor Lysechko, Mr. student members. Three papers pre- within the global display industry. Giga Gabriadze, Mr. Giorgi Jamba- sented at the International Semicon- During the visit, engineers from zishvili, and Mr. Kaka Lomia. ductor Conference CAS 2014, Sinaia, BOE introduced TFT-LCD (Thin Film After the Workshop its participants October 13–15, 2014, received the Transistor—Light Emitting Diode) took part in an excursion in Tbilisi. In Best Paper Awards in a form of a free and showed the Gen 8.5 TFT-LCD our opinion, DIPED-2014 was a good IEEE EDS membership in 2015. The processing line. Many innovations opportunity to intensify cooperation plans for 2015 include: stimulation and developments of display indus- between scientific groups involved of new members joining, student try are also shown and introduced in the diffraction theory and its ap- awards at the CAS 2015 IEEE Confer- to the students, like OLED (Organic plication, and to expand existing ence and at the Student ETTI 2015 Light-Emitting Diode), transparent contacts. The next, 20th Edition of competition, organization of the EDS display panel, eye- controlled opera- DIPED will be held at the Institute of conferences and technical meet- tion and so on. After the visit, aca- Applied Problems in Mechanics and ing, assisting potential members in demic exchange is held. Manager of Mathematics, Lviv, Ukraine, on Sep- publishing their works in ED Jour- technology development department tember 21–24, 2015. nals and at the related conferences, introduced their pioneer work and finding new partners involved in the answered questions from students. IEEE ED Romania Section electron device research for prepa- The visit to BOE aimed at enhanc- Chapter ration of research project proposals ing the students’ understanding –by Cristian Ravariu
The ED Romanian Chapter has been recently revitalized and celebrates in May 2015 the first year of the ac- tivity. The activity was restored with the aim of few enthusiastic ED mem- bers, supported by our colleagues from the local Solid State Circuits Society Chapter, encouraged by EDS community and by the IEEE-Roma- nia Section. The members of the young ED Chapter wish to express their gratitude to all the contributors of this initiative. The Electron Device ED University of Chinese Academy of Sciences (UCAS) – Beijing Student Branch Chapter, Chapter becomes a joint Chapter to visiting BOE in Beijing
July 2015 ❍ IEEE Electron Devices Society Newsletter 41 of industry companies and the de- After the IEDM2014 feedback meet- velopment of the microelectronics ing, we held the annual general meet- industry. It may help to inspire stu- ing to review activities of ED Kansai dents to think about how to better in 2014 and to discuss plans for 2015. combine scientific research work Also discussed was a plan for with the real industry applications the upcoming 2015 IMFEDK inter- and their future career planning. national conference, which is to be ~ Mansun Chan, Editor co-sponsored with the Microwave Theory and Techniques Society Kan- ED Kansai sai Chapter on June 4–5, 2015 in Kyo- –by Michinori Nishihara to, Japan. Please check www.imfedk. org for more information. The ED Kansai Chapter held a feed- back meeting from the 2014 IEDM Dr. Tatsuya Kunikiyo, speaker ED Japan with 20 students and members –by Tohru Mogami from both academia and industries. The meeting was held at the Osaka On February 12, 2015, the annual Institute of Technology Umekita meeting of the ED Japan Chapter was Knowledge Center, in Osaka, Japan, held at the University of Tokyo. Dr. February 3, 2015. The following two Tohru Mogami, Japan Chapter Chair researchers reported: Dr. Tatsuya and Prof. Masaaki Niwa, Vice Chair, Kunikiyo of Renesas Electronics, on reported 2014 activities and 2015 Power Devices and Image Sensors plans of the Chapter. At the meeting, and Dr. Shingo Sato of Kansai Uni- the 2014 EDS Japan Chapter Student versity, on Advanced FET sessions. Award (VLSI & IEDM) was presented Dr. Kunikiyo reported that SiC to 6 students, who made excellent and GaN based power devices show presentations at the Symposium clearly better performance than Dr. Shingo Sato, speaker on VLSI Technology 2014 and IEDM the one with Silicon. The better ef- 2014. The award winners are posted ficience of those new devices will on the Japan Chapter’s webpage: have a large impact to our society. Dr. Sato reported on the aspects (http://www.ieee-jp.org/japancoun- Advancement of power semicondu- of reliability and modeling of na- cil/chapter/ED-15/ed15_award.htm). tor technology will contribute to the noscale FETs which indicate steady After the annual meeting, the growth of Hibrid Electric Vehicles progress in the most advanced semi- IEDM 2014 Report Session was held. and Electric Vehicles market. conductor technology front. Nine Japanese members of the
Participants of the 2014 IEDM feedback meeting
42 IEEE Electron Devices Society Newsletter ❍ July 2015 Attendees and presenters of the IEDM 2014 Report Session
2015 ED Japan Chapter executive committee meeting attendees
IEDM program committee reported IEEE EDS Distinguished Lecture The talk highlights some of these on summary, topics and research at Tokyo Institute of Technology RF systems and discusses De- trends of their sub-committees, for –by Hiroshi Iwai sign of a RF Power Amplifier on a more than sixty attendees. This ses- Nano CMOS technology platform. sion provided a good opportunity Prof. Arun Chandorkar of Indiana DeMOS device has been proposed for the attendees to understand the Institute of Bombay was invited by to realize Power Amplifier. The key research trends of various areas, es- Tokyo Institute of Technology to design parameters of a Shallow pecially for those who were not able deliver an IEEE EDS Distinguished Trench Isolation based drain-ex- to attend the IEDM. Lecture, entitled by “Co-Design of tended MOS device are experimen- The executive committee meet- RF Power Amplifier with consid- tally discussed for high power RF ing of the EDS Japan Chapter was eration of issues of Device, Circuit applications in advanced CMOS also held on the same day and the and Technology,” at Suzukakedai technologies. Active discussion plans for 2015 of the Chapter were campus of Tokyo Institute, Yoko- was conducted after his talk. approved. The EDS Japan Chapter hama, Japan, on March 4, 2015. ~Kuniyuki Kakushima, Editor Executives: Dr. Tohru Mogami; Chair, Prof. Masaaki Niwa; Vice Chair, Dr. Meishoku Masahara; Secretary, and Prof. Takahiro Shinada; Treasurer in- vited the guests (the 9 guest speak- ers of the IEDM Report Session), as well as Prof. Hiroshi Iwai, EDS Jr. Past President, Prof. Kuniyuki Kakushima, EDS Newsletter Regional Editor, and Dr. Naoki Yokoyama, Past EDS Japan Chapter Chair, Prof. Akira Toriumi, Past EDS Japan Chapter Chair, Koji Kita, Prof. Arun Chandorkar of Indian Institute of Bombay (third from left), with organizers and Past EDS Japan Chapter Treasurer. attendees of EDS DL
July 2015 ❍ IEEE Electron Devices Society Newsletter 43 ED Kuala Lumpur, Malaysia 10th IEEE Regional Symposium on Research Center, USA , who will be –by Badariah Bais & Zubaida Yusoff Micro and Nanoelectronics (IEEE- giving a talk on “Nanotechnology: RSM2015) at Primula Hotel, Kuala Development of Practical Systems 2015 EDS Malaysia AGM Terengganu. This is the tenth RSM and Nano-Micro-Macro Integration” On the of January, 16, 2015, the ED organized by the Electron Devices and Prof. Dr. Hirofumi Tanaka from Malaysia Chapter held its Annual Chapter of the IEEE Malaysia Sec- Kyushu Institute of Technology, Ja- General Meeting at the Palm Garden tion and is chaired by Assoc. Prof. Dr pan, who will talk on “Brain-like Hotel, IOI Resort, Putrajaya. Assoc. Mohd. Nizar Hamidon from the In- signal generating electric devices Prof. Dr. Badariah Bais from Univer- stitute of Advanced Technology, Uni- made of single-walled carbon nano- siti Kebangsaan Malaysia (UKM) was versiti Putra Malaysia with Universiti tube and nanoparticle complex.” elected to be the Chapter Chair while Sultan Zainal Abidin (UNISZA) as a More info about the conference Assoc. Prof. Dr. Norhayati Soin from co-organizer. Over the last 18 years, can be obtained at the conference Universiti Malaya (UM) was elected RSM has become the prominent in- website http://ieeemalaysia-eds.org/ to be the Vice-Chair. Assoc. Prof. Dr. P. ternational forum on micro and nano rsm2015/home.html Susthitha Menon from the Institute of electronics embracing all aspects of Microengineering and Nanoelectron- the semiconductor technology from Technical Talk and Membership ics (IMEN), Universiti Kebangsaan application of microelectronics in Drive at UNISZA Malaysia (UKM), Dr. Zubaida Yusoff product development, device model- On March, 1, 2015, representatives of from Multimedia University and As- ing & simulation, VLSI design & test, the ED Malaysia Chapter visited Uni- soc. Prof. Dr Roslina Sidek from Uni- device packaging & testing, device versiti Sultan Zainal Abidin (UNISZA) versiti Putra Malaysia (UPM) were physics and characterization, ma- to deliver a technical talk as well as also elected to be the Secretary, As- terial and new fabrication facilities to introduce and promote IEEE EDS sistant Secretary and Treasurer re- technologies, micromachining, mi- membership to UNISZA students spectively. Several members from crosensors and MEMS,mocrowave and staff. This event was conducted various universities and industries in device and MMIC, opto-electronics at UNISZA library auditorium and Malaysia were also elected to be part and photonics technology,process was attended by 80 people. Assoc. of the committee. EDS Malaysia’s technology (CMOS, bipolar, BiC- Prof. Dr. Roslina Sidek delivered a main activity for 2015 is to organize MOS, GaAs), realibility and failure talk on “Semiconductor Revolution” the 10th IEEE Regional Symposium analysis, training and human re- while Assoc. Prof. Dr Norhayati Soin of Micro and Nanoelectronics (IEEE- source development in microelec- delivered a talk about chapter. RSM2015) which will be held on Au- tronics industry, nano technology gust 19–21, 2015, at Primula Hotel, and nano electronics. Technical Talk at IMEN Kuala Terengganu. Other activities in- This conference offers two key- On March, 18, 2015, the chapter co- clude IEEE Distinguished Lecture (DL) note lectures by distinguished per- organized a technical talk on “I Have talks, technical workshops, member- sons in their own fields with an ex- Never Registered EvenThough I Have ship drive projects, final year project pected participation of more than Worked as an Engineer for Years—Is awards and social activities. 100 participants from more than 10 It Really Necessary?” which was de- countries from around the world livered by Mr. Cheang Kok Meng, 10th IEEE Regional Symposium including India, Thailand, Australia, who is a Senior Member of the IEEE on Micro and Nanoelectronics Taiwan, China, Bangladesh, Japan and who is also the Former Execu- (IEEE-RSM2015) and Indonesia. The keynote speak- tive Director of the Institution of En- From August 19 to 21, 2015, the ED ers and their keynote titles are Dr. gineers, Malaysia. The talk was held Malaysia Chapter will organize the Meyya Meyyapan from NASA Ames at the Institute of Microengineering
Members who attended the IEEE ED Malaysia AGM 2015
44 IEEE Electron Devices Society Newsletter ❍ July 2015 Participants of the technical talk/membership drive at UNISZA
Prof. Shantanu Mahapatra delivering technical Pa rticipants of the technical talk at IMEN with Mr Cheang talk at IIEST Shibpur and Nanoelectronics (IMEN), Uni- The ED Calcutta Chapter in as- 45 post graduate students and re- versiti Kebangsaan Malaysia (UKM) sociation with IIEST Shibpur, also search scholars from IIEST, Uni- and attended by both students and organized a one-day workshop on versity of Calcutta and Jadav- staff. Mr Cheang explained about the ”The Art of Compact Modeling”, on pur University. The Department importance of being registered with February 19, 2015, by Prof. Santanu of Electronics & Communication professional societies in an attempt Mahapatra, Department of Elec- Engineering, HITK and IEEE EDS to gain experience and enhance net- tronic Systems Engineering, Indian Calcutta Chapter jointly organized working. Institute of Science, Bangalore. The a technical talk by Dr. Shubhajit ~P Susthitha Menon, Editor workshop was extremely success- Roy Chowdhury, Assistant Profes- ful in bringing together students sor, Centre for VLSI and Embedded ED Calcutta Chapter from diverse domains of Electron- Systems Technology, IIIT Hyder- –by Swapnadip De and ics Engineering and VLSI Technol- abad, India at Heritage Institute of Soumya Pandit ogy and provided them an oppor- Technology on February 6, 2015. tunity for hands-on experience on The talk was attended by over 50 The ED Calcutta Chapter, in associa- Semiconductor device modeling. students and faculty members of tion with IIEST Shibpur, organized a The workshop was attended by Heritage Institute of Technology. technical talk on “Nanoscale Quan- tum Transport-Beyond Charge based Nanoelectronics,” on February 12, 2015, by Prof. Bhaskaran Muralid- haran, Department of Electrical Engi- neering, Indian Institute of Technology Bombay. The talk was attended by faculty members from IIEST Shibpur and 40 post graduate students and re- search scholars from IIEST, University Prof. Bhaskaran Muralidharan delivering tech- Dr. Shubhajit Roy Chowdhury delivering his of Calcutta and Jadavpur University. nical talk at IIEST Shibpur talk at Heritage Institute of Technology
July 2015 ❍ IEEE Electron Devices Society Newsletter 45 ED NIST Student Chapter –by Ajit Kumar Panda
The ED NIST Student Chapter orga- nized a one day seminar on “Strain Engineering in Silicon Nanoelec- tronics,” on March, 30, 2015. Prof. C K Maiti, formerly professor at Depart- ment of ECE, IIT-Kharagpur, talked Distinguished Lecture attendees at the formal inauguration of ED Coimbatore Chapter about the recent trend in technology and the strain engineering like bidi- Devices Society and Quest EDS pro- dressed the various challenges and rectional strain, unidirectional strain, gram. During his talk, he discussed opportunities in perovskite solar cells process induced strain and effect of reliability concerns during fabrica- beyond methyl ammonium lead- scalability. 33 participants including tion process of silicon-nanodevice iodide with particular emphasis on IEEE member and non-members had structure, applications of Dual–Chan- their optoelectronic properties. Prof. attended the seminar to enhance nel Nanowire Transistors. Chris McNeil from Monash Univer- their knowledge as well as to focus sity delivered a talk on “Character- on the new areas of research activity AP/ED Bombay Chapter izing organic semiconductors with in devices and fabrication. –by V. Ramgopal Rao soft x-rays.” In his talk, he provided The chapter also organized its an overview of the range of micros- first National Conference on Devices The AP/ED Bombay Chapter, IIT copy, reflectivity and scattering tech- and Circuits on February, 21, 2015. Bombay, organized around fifteen niques based on soft x-rays that have Dr. Sudeb Dasgupta, IIT-Roorkee, talks in diverse areas such as MEMS been developed in recent years and and Dr. Sanjeev Manhas, IIT-Roor- fabrication, organic semiconduc- their utility for providing new insight kee, were the main speakers of the tors, photovoltaics, semiconductor into the complex structure of organ- conference which was attended by devices, CMOS technology, embed- ic semiconductor thin films. Dr. Jai over 120 delegates from IIT-Kharag- ded system design, reliability and Verma from Intel Corporation in his pur, NIT-Silchar, VSSUT-Burla, SUI- device characterization. Prof. Hiroshi talk titled, “Band gap and polariza- IT-Sambalpur, KIIT-Bhubaneswar, Iwai from Tokyo Institute of Technol- tion engineered III-nitrides UV LEDs”, ITER-Bhubaneswar, Berhampur Uni- ogy, Japan, former-President, IEEE discussed about the potential appli- versity and NIST-Berhampur. EDS and a recipient of the IEEE J.J. cations of light-weight and robust ul- Ebers Award and IEEE Paul Rappa- traviolet (UV) light emitting sources ED Coimbatore Chapter port Award, delivered an EDS Distin- in water purification, bio sensors, –by D. Nirmal guished Lecture on “Future of Logic solid state lighting and lithography. Nano CMOS Technology.” In his lec- Prof. Ulf Schlichtmann’s talk, “Reli- On February 13, 2015, the ED Co- ture, he discussed the importance ability and Robustness Challenges imbatore Chapter in association of CMOS devices and stressed that in IC and Embedded System De- with Department of Electronics and there are no other promising can- sign—How can EDA help?” gave Communication Engineering, Ka- didates which could replace CMOS an overview about the current situ- runya University, organized a DL with better performance for high- ation of IC and Embedded System talk on “Trends and Challenges of density integration with low cost for Design. It addressed reliability and Silicon-Nano devices,” by Dr. M. K. the moment. robustness challenges and reported Radhakrishan, wherein he initially Prof. Subodh Mhaisalkar from on research activities and results on gave an overview of the IEEE Electron NTU Singapore in his lecture ad- Electronic Design Automation (EDA)
One-day seminar organized by ED NIST Student Chapter Prof. Subodh Mhaisalkar delivering his lecture
46 IEEE Electron Devices Society Newsletter ❍ July 2015 (From left Mr. Nagesh Ch, Dr. A K Sunaniya, Mr. G. P. Keshri, Dr. Taimoor Khan, Dr. R. H. Laskar, Prof. F. A. Talukdar (Branch Counselor), Dr. T. R. Lenka (Chair), Mr. Koushik Guha (Coordinator), Mr. Gaurav Saxena and attendees of the Workshop). Organized by the ED National Institute of Technology Silchar Student Branch Chapter
techniques at TUM which address Well being in the Changing Urban India has achieved in developing these challenges. Environment, Professor Surendra GaN based discrete devices. Prasad, Former Director-IIT Delhi ad- On March 27, 2015, the chapter ED National Institute of Technol- dressed some fundamental break- jointly organized the Annual Visi- ogy Silchar Student Chapter throughs in Communication Theory, tor’s programme of Department of –by Trupti Ranjan Lenka Professor S. K. Joshi, Distinguished Electronics Science, University of Emeritus Scientist CSIR & Honorary Delhi. Dr. A. K. Tripathi, Scientist- The EDS Student Branch Chapter— Vikram Sarabhai Professor, JNCASR, ‘F’, Ministry of New and Renewable National Institute of Technology NPL covered 100 Years of X-ray Crys- Energy, Government of India, New Silchar, Assam, India, organized a tallography and Professor Sankar K. Delhi gave a talk on “Renewable one-day Workshop on “MEMS” on Pal, FTWAS, FIEEE, Distinguished Energy Development in India”, Dr. Februate 7, 2015, at Department of Scientist and former Director, Indi- P. K. Chaudhary, Scientist-‘H’ Solid Electronics and Communication En- an Statistical Institute, Kolkata cov- State Physical Laboratory, Delhi dis- gineering, NIT Silchar. Mr. Gaurav ered advance topics like generalized cussed the growth and applications Saxena, IIT Guwahati and Mr. Rough Sets, uncertainty Analysis and of Carbon Nano Tube based Devic- Nagesh Ch., IIT Guwahati, delivered Granular Image Mining. es, Prof. Viresh Dutta, Professor and technical talks on MEMS which was On March, 11, 2015, the chapter in Head, Center For Energy Studies, attended by engineering students association with Motilal Nehru Col- IITD discussed gave an overview of and research scholars of Department lege, organized a lecture on “Semi- Photovoltaic Material and Devices of ECE, NIT Silchar. conductor Technology and MMIC and Dr. Suraj P. Khanna, Principal development in India” by Dr. Meena Scientist, National Physical Labo- EDS Delhi Chapter Mishra, Scientist-’F’ at the Solid ratory, New Delhi, enlightened the –by Mridula Gupta and Manoj State Physics lab., Defense Research audience about the Nobel Prize in Saxena and Development Organization Physics 2014-Blue Light Emitting (DRDO), Govt. of India. She enu- Diodes. During January 30-31, 2015, the chap- merated various advancements that ~Manoj Saxena, Editor ter jointly organized the Second Lec- ture Workshop on Trans-disciplinary Areas of Research and Teaching by Shanti Swaroop Bhatnagar Awardee with Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi. The inaugural talk was deliv- ered by Professor Asis Datta, FTWAS, Former Vice Chancellor, Jawaharlal Nehru University, New Delhi, Dr. In- dira Nath, FTWAS, Former, Head, Dept. Of Biotechnology, AIIMS, Delhi Former, Raja Ramanna Fellow high- lighted the importance of Health and Attendees of the ED Delhi Chapter event
July 2015 ❍ IEEE Electron Devices Society Newsletter 47 EDS MEETINGS CALENDAR
EDS Meetings Calendar THE COMPLETE EDS CALENDAR CAN BE FOUND AT OUR WEB SITE: HTTP://http://eds.ieee.org/EDS.IEEE.ORG. PLEASE VISIT.
2015 IEEE 22nd International Symposium on the Physical 29 Jun - 02 Jul Lakeshore hotel and Failure Analysis of Integrated Circuits (IPFA) 2015 No. 773, Ming Hu Road Hsinchu, Taiwan
Ryukoku University Avanti Kyoto 2015 22nd International Workshop on Active-Matrix 01 Jul - 03 Jul Hall Flatpanel Displays and Devices 2015 31 Nishi Sanno-cho (AM-FPD) Higashi Kujo Minami-Ku Kyoto, Japan
Kaifeng Hotel 2015 28th International Vacuum Nanoelectronics 13 Jul - 17 Jul Sun Yat-sen University north gate, Conference (IVNC) 2015 No.135, Xingang Xi Road, Haizhu District, Guangzhou, 510275, P. R. China
2015 6th Asia Symposium on Quality Electronic Design 03 Aug - 05 Aug Hotel Equatorial Penang (ASQED) 2015 Jalan Bukit Jambul 11900 Pulau Pinang Penang, Malaysia
Universidade Federal da Bahia UFBA 2015 30th Symposium on Microelectronics Technology and 31 Aug - 04 Sep Escola Politécnica da UFBA Devices (SBMicro) 2015 Rua Aristides Novis 2 Federação Salvador, Brazil
2015 Joint e-Manufacturing and Design Collaboration 02 Sep - 03 Sep Taipei World Trade Center Nangang Symposium (eMDC) & 2015 International Symposium on 2015 Exhibition Hall Semiconductor Manufacturing (ISSM) Taipei, Taiwan
2015 International Workshop on Computational Electronics 02 Sep - 04 Sep Purdue University (IWCE) 2015 610 Purdue Mall West Lafayette, IN, USA
Messe Congress Graz ESSDERC 2015 - 45th European Solid-State Device 14 Sep - 18 Sep Betriebsgesellschaft m.b.H. Research Conference 2015 Messeturm, Messeplatz 1 Graz, Austria
48 IEEE Electron Devices Society Newsletter ❍ July 2015
EDS Meetings Calendar http://eds.ieee.org/
2015 XXth IEEE International Seminar/Workshop on Direct 21 Sep - 24 Sep Pidstryhach Institute for Applied and Inverse Problems of Electromagnetic and Acoustic 2015 Problems of Mechanics and Wave Theory (DIPED) Mathematics Full Paper Submission deadline: 01 Aug 2015 Naukova St., 3"B" Final submission deadline: 20 Aug 2015 Lviv, Ukraine Notification of acceptance date: 15 Aug 2015
2015 37th Electrical Overstress/Electrostatic Discharge 27 Sep - 02 Oct Peppermill Resort Hotel Symposium (EOS/ESD) 2015 2707 South Virginia Street Reno, NV, USA
2015 26th European Symposium on Reliability of Electron 05 Oct - 09 Oct Centre de Congrès Pierre Baudis Devices, Failure Physics and Analysis (ESREF) 2015 11, esplanade Compans Cafarelli Toulouse, France
2015 IEEE SOI-3D-Subthreshold Microelectronics Technology 05 Oct - 08 Oct DoubleTree by Hilton Sonoma Wine Unified Conference (S3S) 2015 Country One DoubleTree Drive Rohnert Park, CA, USA
2015 IEEE International Integrated Reliability Workshop (IIRW) Stanford Sierra Conference Center Abstract submission deadline: 12 Jul 2015 11 Oct - 15 Oct 130 Fallen Leaf Road Final submission deadline: 11 Oct 2015 2015 South Lake Tahoe, CA, USA Notification of acceptance date: 14 Aug 2015
2015 IEEE Compound Semiconductor Integrated Circuit 11 Oct - 14 Oct Sheraton New Orleans Hotel Symposium (CSICS) 2015 500 Canal Street New Orleans, LA, USA
2015 International Semiconductor Conference (CAS) 12 Oct - 14 Oct Hotel Rina Sinaia 2015 Bd. Carol I, Nr 8, Sinaia, Romania
2015 15th Non-Volatile Memory Technology Symposium 12 Oct - 14 Oct Tsinghua University (NVMTS) 2015 Haidian District Beijing, China
Hyatt Boston Harbor 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - 26 Oct - 28 Oct 101 Harborside Drive BCTM 2015 Boston, MA, USA
July 2015 ❍ IEEE Electron Devices Society Newsletter 49 EDS Meetings Calendar http://eds.ieee.org/
2015 12th International Conference on Electrical Engineering, Centro de investigación y de Estudios Computing Science and Automatic Control (CCE) 28 Oct - 30 Oct Avanzados del IPN (Cinvestav) Full Paper Submission deadline: 20 Jul 2015 2015 Av. Instituto Politécnico Nacional 2508 Final submission deadline: 18 Sep 2015 Col San Pedro Zacatenco Notification of acceptance date: 24 Aug 2015 Del. Gustavo A. Madero Mexico City, Mexico
2015 IEEE/ACM International Conference on Computer-Aided 09 Nov - 12 Nov CA, USA Design (ICCAD) 2015
2015 IEEE 46th Semiconductor Interface Specialists Conference 02 Dec - 05 Dec The Key Bridge Marriott (SISC) 2015 1401 Lee Highway Arlington, VA, USA
2015 IEEE International Electron Devices Meeting (IEDM) 07 Dec - 09 Dec Hilton Washington Final submission deadline: 22 Sep 2015 2015 Washington, DC, USA Notification of acceptance date: 14 Aug 2015
2016 IEEE International Reliability Physics Symposium (IRPS) 17 Apr - 21 Apr CA, USA 2016
2016 IEEE International Vacuum Electronics Conference (IVEC) 26 Apr - 28 Apr Monterey Marriott 2016 350 Calle Principal Monterey, CA, USA
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) 05 Jun - 10 Jun Oregon Convention Center 2016 77 NE Martin Luther King Jr. Blvd. Portland, OR, USA
2016 28th International Symposium on Power Semiconductor 12 Jun - 16 Jun Zofin Palace Devices and IC's (ISPSD) 2016 Slovanský ostrov 226 Prague, Czech Republic
2016 IEEE Symposium on VLSI Technology 14 Jun - 16 Jun Hilton Hawaiian Village 2016 2005 Kalia Road Honolulu, HI, USA
2016 IEEE Compound Semiconductor Integrated Circuit 23 Oct - 26 Oct Doubletree by Hilton Austin Symposium (CSICS) 2016 6505 N IH 35 Abstract submission deadline: 01 May 2016 Austin, TX, USA Final submission deadline: 15 Jul 2016 Notification of acceptance date: 30 May 2016
2016 IEEE International Electron Devices Meeting (IEDM) 01 Dec - 09 Dec Hilton San Francisco 2016 San Francisco, CA, USA
50 IEEE Electron Devices Society Newsletter ❍ July 2015
We are excited to announce the launch of the new website of the IEEE/OSA Journal of Lightwave Technology, www.ieee-jlt.org
Among other interesting information, our new website contains:
Highly cited and frequently downloaded JLT papers Featured JLT Special Issues (right now featuring ECOC 2014) Winners of the JLT Award with free open access to the winning papers Recent noteworthy JLT papers JLT Special Issues-Browse by year or by topic area Call for Papers for upcoming JLT Special Issues Answers to frequently asked questions on such topics as JLT re- view times, open access publication options, and ArXiv posting Who is who on JLT's Editorial Board, Staff, and Steering/ Coordinating Committee
Happy Browsing!
July 2015 ❍ IEEE Electron Devices Society Newsletter 51 EDS GOVERNANCE MEETING SUMMARY (continued from page 17)
We offer our sincere thanks to simply would not have happened. deepest thanks and gratitude. The Joe Zhou (EDS VP of Regions and Thank you both for all of your efforts! Singapore chapter is a vibrant, en- Chapter) and Singapore chapter Lastly, we must acknowledge the gaged community of members and administrator Jasmine Leong, for generous support by the ED/CPMT/ volunteers. You do the society proud! their invaluable help in planning this Rel Singapore Chapter, led by chair meeting. Without their diligence, pa- Prof. Chee Lip Gan. To all members of Fernando Guarin tience, and dedication, this meeting the Singapore chapter we extend our EDS Secretary
52 IEEE Electron Devices Society Newsletter ❍ July 2015