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July 2015 IEEE EDS Newsletter

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July 2015 IEEE EDS Newsletter JULY 2015 VOL. 22, NO. 3 ISSN: 1074 1879 EDITOR-IN-CHIEF: M.K. RADHAKRISHNAN TABLE OF CONTENTS TECHNICAL BRIEFS . 1 T ECHNICAL B RIEFS • Reliability Trends of Nano-scaled CMOS Devices • Report on 2015 IEEE International Reliability Physics Symposium • Wide Bandgap Semiconductors, They’re Special RELIABILITY TRENDS OF UPCOMING TECHNICAL MEETINGS . 10 • 2015 IEEE International Integrated Reliability NANO-SCALED CMOS DEVICES Workshop (IIRW) • 2015 IEEE Compound Semiconductor IC GUIDO GROESENEKEN Symposium (CSICS) IMEC AND KU LEUVEN, BELGIUM • 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) SOCIETY NEWS . 13 With the continuous downscaling of CMOS technologies, reliability • EDS Vision and Mission Statements is more and more becoming a major bottleneck and this for several • EDS President’s Message reasons. First of all the electric fields and current and power densi- • Message from EDS Vice President of Regions/ Chapters ties have increased continuously and are now reaching the maxi- • Message from Newsletter Editor-in-Chief mum values that can be allowed for reliable operation. At the same • EDS Governance Meeting Summary time an impressive effort is taking place introducing new materi- • Call for EDS Board of Governors Nominations • EDS Board of Governors Election Process als and novel device architectures to maintain the effective perfor- • IEEE Election Reminder mance scaling. New materials like high k dielectrics and metal gates • EDS Compound Semiconductor Devices and for both logic and memory technologies and novel device concepts Circuits Technical Committee Report • 2015 William R. Cherry Award Winner such as Multiple gate FET’s have already been introduced, while Ge • 42nd Photovoltaic Specialists Conference (PVSC) or III-V materials for high mobility devices are under investigation. Young Professional Award These new materials and devices often have unknown reliability • Congratulations to the EDS Members Recently Elected to IEEE Senior Member Grade behavior and/or introduce new failure mechanisms, whereas their • Enhance Your Career with IEEE Senior Membership speed of introduction exceeds the capabilities to explore their reli- • EDS Guidelines for Distinguished Lectures and ability performance in great detail. Finally, the market is continu- Mini-Colloquia Programs • EDS Chapter Subsidies for 2016 ously demanding higher reliability levels, with single digit failure • IEEE Bring Your Daughters and Sons to Work Day rates in FIT units (1 FIT = 1 failure per 109 operating device hours) • 2015 EDS Award Winners and 2016 Call for Nominations for present technologies. In the past, the technological reliability margins that were available to achieve the required failure rate YOUNG PROFESSIONALS . 29 levels were always sufficiently high, but in some of the technolo- • Reflections from EDS Young Professionals • IEEE Young Professionals—An Exciting New gies under development this becomes more and more cumber- Rebranded Outlook some. In this technical note we review the evolution of reliability • Register Now for Upcoming EDS Webinars! for nanoscaled technologies, and we show that for some failure • New Webinars Available in the Archive • EDS-ETC Report mechanisms the lifetime can no longer be guaranteed. As a result CHAPTER NEWS . 34 alternative ways of reliability assurance will become necessary. • WIMNACT 45—IEEE EDS Mini-Colloquium— As an example of the trends in the electric fields existing in the Yokohama transistors under operating conditions, Fig. 1 shows the evolution • WIMNACT 46—IEEE EDS Mini-Colloquium— Shenzhen over the past 40 years of the oxide and silicon fields as a function • IEEE ED NIST Student Chapter’s 4th Mini-Colloquium of the gate length [1]. • IEEE ED Delhi Chapter’s Mini-Colloquium on Compact Modeling Techniques (continued on page 3) REGIONAL NEWS . 37 EDS MEETINGS CALENDAR . 48 YOUR COMMENTS SOLICITED Your comments are most welcome. Please write directly to the Editor-in-Chief of the Newsletter at [email protected] ELECTRON DEVICES NEWSLETTER SOCIETY EDITORIAL STAFF President Vice President of Publications Editor-In-Chief Albert Z.H. Wang and Products M.K. Radhakrishnan University of California, Riverside Bin Zhao NanoRel E-mail: [email protected] Fairchild Semiconductor E-mail: [email protected] E-mail: [email protected] President-Elect Samar Saha Vice-President of Regions/ REGIONS 1-6, 7 & 9 UK, Middle East & Africa Ultrasolar Technology Chapters Eastern, Northeastern & South- Jonathan Terry E-mail: [email protected] Xing Zhou eastern USA (Regions 1,2 & 3) The University of Edinburgh Nanyang Technological University Mukta Farooq E-mail: [email protected] Treasurer E-mail: [email protected] IBM Systems and Technology Ravi M. Todi E-mail: [email protected] Western Europe Qualcomm Technologies, Inc. Vice President of Technical Jan Vobecky E-mail: [email protected] Committees & Meetings Central USA & Canada Abb Switzerland Ltd. Leda Lunardi (Regions 4 & 7) E-mail: [email protected] North Carolina State University Karim S. Karim Secretary University of Waterloo E-mail: [email protected] REGION 10 Fernando Guarin E-mail: [email protected] IBM Microelectronics Australia, New Zealand & South East Asia E-mail: [email protected] IEEE Newsletters Southwestern & Western USA Theresa Smith P Susthitha Menon (Regions 5 & 6) Universiti Kebangsaan Jr. Past President IEEE Operations Center Adam M. Conway E-mail: [email protected] Malaysia Paul K.L. Yu Lawrence Livermore Nat. Lab. E-mail: [email protected] University of California at San Diego E-mail: [email protected] E-mail: [email protected] Executive Director Christopher Jannuzzi Latin America (Region 9) Northeast Asia Joao Antonio Martino Kuniyuki Kakushima Sr. Past President IEEE Operations Center University of Sao Paulo Tokyo Institute of Technology Renuka P. Jindal E-mail: [email protected] E-mail: [email protected] E-mail: [email protected]. University of Louisiana at ac.jp Lafayette Membership Administrator E-mail: [email protected] Joyce Lombardini REGION 8 East Asia IEEE Operations Center Eastern Europe Mansun J. Chan E-mail: [email protected] Daniel Tomaszewski Vice President of Membership Institute of Electron Technology Hong Kong Univ. of Sc. & Tech. and Services E-mail: [email protected] E-mail: [email protected] Mikael Ostling KTH, Royal Institute of Technology Scandinavia & Central Europe South Asia E-mail: [email protected] Mariusz Orlikowski Manoj Saxena Lodz University of Technology University of Delhi E-mail: [email protected] E-mail: [email protected] IEEE prohibits discrimination, harassment, and bullying. For more information, visit http://www.ieee.org/web/aboutus/whatis/policies/p9-26.html. CONTRIBUTIONS WELCOME Readers are encouraged to submit news items concerning the Society and EDS Board of Governors (BoG) its members. Please send your ideas/articles directly to either the Editor- Elected Members-at-Large in-Chief or appropriate Editor. The e-mail addresses of these individuals Elected for a three-year term (maximum two terms) with ‘full’ voting privileges are listed on this page. Whenever possible, e-mail is the preferred form of submission. 2015 TERM 2016 TERM 2017 TERM NEWSLETTER DEADLINES D. Camacho (1) A. Escobosa (2) Z. Celik-Butler (2) SSUE UE ATE S. S. Iyer (2) R. Huang (1) S. Chung (2) I D D M. Meyyappan (2) L. Lunardi (1) M. Farooq (1) A. Nathan (2) M. Ostling (2) P. Fay (1) January October 1st M. Shur (2) M.K. Radhakrishnan (2) C. Lilley (1) April January 1st D. Verret (1) J. Swart (1) D. Misra (1) July April 1st B. Zhao (2) X. Zhou (2) H. S. Momose (1) October July 1st T.L. Ren (2) The EDS Newsletter archive can be found on the Society web site at http://eds.ieee.org/eds-newsletters.html. The archive contains issues from July 1994 to the present. IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and Electronics Engineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included in the Society fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Send address changes to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, Piscataway, NJ 08854. Copyright © 2015 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed for direct commercial advantage, and the title of the publication and its date appear on each photocopy. FPO 2 IEEE Electron Devices Society Newsletter ❍ July 2015 RELIABILITY TRENDS OF NANO-SCALED CMOS DEVICES (continued from page 1) Clearly 3 periods can be distin- guished: a first constant voltage scaling period in the seventies and 1.0E+07 Eox eighties, in which the power supply voltage was not reduced when scal- Esi ing the geometries, and consequent- 1.0E+06 ly the fields increased continuously with scaling. This was followed by a more or less constant field scaling pe- riod, in which the power supply volt- 1.0E+05 ages were reduced with every new technology node, so that the fields Electric field (V/cm) saturated at a certain plateau. Since 1.0E+04 the 65 nm node, however, the power supply voltages are saturating at a level around 1 V, and can no further be reduced because of the non-scal- 1.0E+03 ing sub-threshold slopes of the MOS- 10.00 1.00 0.10 0.01 FET’s. As a result we observe again a Gate length (um) further increase in the electric fields, which starts to put new constraints on the reliability of the devices. More- Fig. 1. Evolution of oxide and silicon electric fields showing 3 different scaling scenario periods [1] over, the power density has also con- tinuously increased, which leads to higher chip temperatures, and conse- 1.6 quently even a stronger acceleration 10.0 of the degradation mechanisms.
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