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Deciphering Photocarrier Dynamics for Tuneable High-Performance Perovskite-Organic Semiconductor Heterojunction Phototransistors

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Deciphering Photocarrier Dynamics for Tuneable High-Performance Perovskite-Organic Semiconductor Heterojunction Phototransistors Deciphering photocarrier dynamics for tuneable high-performance perovskite-organic semiconductor heterojunction phototransistors Item Type Article Authors Lin, Yen-Hung; Huang, Wentao; Pattanasattayavong, Pichaya; Lim, Jongchul; Li, Ruipeng; Sakai, Nobuya; Panidi, Julianna; Hong, Min Ji; Ma, Chun; Wei, Nini; Wehbe, Nimer; Fei, Zhuping; Heeney, Martin; Labram, John G.; Anthopoulos, Thomas D.; Snaith, Henry J. Citation Lin, Y.-H., Huang, W., Pattanasattayavong, P., Lim, J., Li, R., Sakai, N., … Snaith, H. J. (2019). Deciphering photocarrier dynamics for tuneable high-performance perovskite-organic semiconductor heterojunction phototransistors. Nature Communications, 10(1). doi:10.1038/s41467-019-12481-2 Eprint version Publisher's Version/PDF DOI 10.1038/s41467-019-12481-2 Publisher Springer Nature Journal Nature Communications Rights Archived with thanks to Nature Communications Download date 26/09/2021 06:46:47 Link to Item http://hdl.handle.net/10754/658584 ARTICLE There are amendments to this paper https://doi.org/10.1038/s41467-019-12481-2 OPEN Deciphering photocarrier dynamics for tuneable high-performance perovskite-organic semiconductor heterojunction phototransistors Yen-Hung Lin 1,10*, Wentao Huang2,10, Pichaya Pattanasattayavong 3, Jongchul Lim 1, Ruipeng Li4, Nobuya Sakai1, Julianna Panidi 2, Min Ji Hong5, Chun Ma6, Nini Wei7, Nimer Wehbe7, Zhuping Fei8,9, Martin Heeney 8, John G. Labram 5, Thomas D. Anthopoulos 6* & Henry J. Snaith 1* 1234567890():,; Looking beyond energy harvesting, metal-halide perovskites offer great opportunities to revolutionise large-area photodetection technologies due to their high absorption coeffi- cients, long diffusion lengths, low trap densities and simple processability. However, suc- cessful extraction of photocarriers from perovskites and their conversion to electrical signals remain challenging due to the interdependency of photogain and dark current density. Here we report hybrid hetero-phototransistors by integrating perovskites with organic semiconductor transistor channels to form either “straddling-gap” type-I or “staggered-gap” type-II heterojunctions. Our results show that gradual transforming from type-II to type-I heterojunctions leads to increasing and tuneable photoresponsivity with high photogain. Importantly, with a preferential edge-on molecular orientation, the type-I heterostructure results in efficient photocarrier cycling through the channel. Additionally, we propose the use of a photo-inverter circuitry to assess the phototransistors’ functionality and amplification. Our study provides important insights into photocarrier dynamics and can help realise advanced device designs with “on-demand” optoelectronic properties. 1 Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, UK. 2 Department of Physics and Centre for Plastic Electronics, Imperial College London, London SW7 2AZ, UK. 3 Department of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology (VISTEC), Rayong 21210, Thailand. 4 National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, New York 11973, USA. 5 School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331, USA. 6 Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia. 7 King Abdullah University of Science and Technology (KAUST), Core Labs, Thuwal 23955-6900, Saudi Arabia. 8 Department of Chemistry and Centre for Plastic Electronics, Imperial College London, London SW7 2AZ, UK. 9 Institute of Molecular Plus, Tianjin Key Laboratory of Molecular Optoelectronic Science, Tianjin University, Tianjin 300072, China. 10These authors contributed equally: Yen-Hung Lin, Wentao Huang. *email: [email protected]; [email protected]; [email protected] NATURE COMMUNICATIONS | (2019) 10:4475 | https://doi.org/10.1038/s41467-019-12481-2 | www.nature.com/naturecommunications 1 ARTICLE NATURE COMMUNICATIONS | https://doi.org/10.1038/s41467-019-12481-2 fter several decades of research, the technological devel- materials used in this work; rather, it could be extended to resolve Aopment for photodetection and photosensing have met undesired interfacial losses in other types of hybrid photo- the needs of a wide range of applications in everyday lives, transistors. Furthermore, we fabricated unipolar photo-inverters including optical communications1, imaging systems2, environ- using phototransistors, demonstrating photo-modulated output mental detection3 as well as medical diagnostics4. Among dif- voltages and evaluating their intrinsic amplification. Not only will ferent types of photodetectors, phototransistors are of notable the knowledge acquired from our work help to provide tailorable, interest due to their potential to achieve highly tuneable photo- on-demand optoelectronic sensors, but the large library of MHP gain with a variety of new intrinsic semiconductors5,6. Being an and OSC materials could also address many other optoelectronic active component in detection, phototransistors are not only applications, by applying this unique type-I HJ approach to capable of operating under different modes but also able to facilitate better photocarrier transport. reduce the complexity of the readout circuitry. Moreover, phototransistor-based approaches have extensively enriched the field of photodetection with noteworthy state-of-the-art demon- Results strations such as enhanced infrared detection for Si electronics by HJPTs and performance metrics. Our HJPT consisting of C8- 7 colloidal quantum dots , wide-dynamic-range photocarrier inte- BTBT and C16-IDTBT OSCs (Fig. 1a) in a top-gate bottom- gration8, and advanced imaging systems by combining with contact (TG-BC) transistor configuration is shown in the sche- CMOS technologies9,10. matic drawing in Fig. 1b. The design of our HJPT sandwiches the Metal-halide perovskites (MHPs) stand out as obvious light-absorbing layer MHP between the source-drain (S-D) con- candidates for implementation in these devices, owing to their tacts and the OSC transistor channel. Figure 1c shows the much-heralded material property trio: remarkable absorption ultraviolet–visible (UV–vis) absorption spectra for the films of fi 11 12 coef cients , long-lived photocarriers and tuneable optical FACs, C8-BTBT, C16-IDTBT and a blend composed of C8-BTBT 13 bandgaps . Together with simple processing requirements, this and C16-IDTBT in a ratio of 1:1 (abbreviated as blend 1:1). The has led to their rapid emergence over the past years, not only absorption edge for FACs appears slightly below 800 nm whilst 14,15 promising to revolutionise future energy generation but also those of C8-BTBT and C16-IDTBT/blend 1:1 start at ~400 nm and 6,16,17 for innovating optoelectronic applications . In spite of their ~730 nm, respectively. Since C8-BTBT and C16-IDTBT possess promising features, the phototransistors based on process- different highest occupied molecular orbital (HOMO) levels 28 29,30 friendly semiconducting MHPs (i.e., solution-grown polycrystal- (5.5 eV for C8-BTBT and 5.1 eV for C16-IDTBT ) and the line films) have not been widely reported18. The reason could be valence band (VB) for FACs is around 5.4 eV13, the OSC mate- attributed to inter-grain boundary scattering19 and/or intra-grain rials chosen to construct HJPTs could form either straddling-gap 20 defect recombination . Furthermore, several groups have type-I heterojunctions (C8-BTBT) or staggered-gap type-II het- fi 31 reported that the ionic nature of MHPs appears to cause dif - erojunctions (C16-IDTBT) with FACs (see Fig. 1d). Figure 1e culties for gating the transistor channel at room temperature21,22. shows surface topographic images acquired from atomic force Research efforts have since been put into devices based on single microscopy (AFM) for the hetero FACs/OSC bilayer stacks and crystals23, single-crystalline layers24 and monolayer flakes25. the pristine FACs film with the corresponding height distribution However, the rather complex process protocols to form single- presented in Fig. 1f. Apart from the clear grain-like surface fea- crystalline materials are less scalable, hence posing a great chal- tures (Fig. 1e), the pristine FACs film exhibits two distinct peaks lenge for high-throughput, large-area manufacturing17.Onthe in its height distribution (Fig. 1f). This is attributed to the co- other hand, hybrid heterostructures that combine materials with existence of thick perovskite-rich areas as well as thin perovskite- complementary optical and electrical properties in a photo- deficient regions in the FACs film. On the other hand, for all the transistor serve as an excellent platform to enhance the photo- FACs/OSC bilayer stacks we only observed one Gaussian-like response5. Numerous attempts using MHPs in this manner have distribution regardless of what OSC compositions were used. been reported (see Supplementary Note 1 and Supplementary Therefore, in the bilayer stacks the OSCs formed conformal Fig. 1), but their mediocre optoelectronic performance is usually coatings with good coverage over the grainy FACs layer beneath. mitigated by employing a highly conductive channel material, To further inspect the FACs/OSC bilayer stacks, we carried out resulting in a photoconductor, rather than a phototransistor, with the high-angle annular dark-field scanning transmission electron an apparent trade-off between
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