JULY 2015 VOL. 22, NO. 3 ISSN: 1074 1879 EDITOR-IN-CHIEF: M.K. RADHAKRISHNAN TABLE OF CONTENTS TECHNICAL BRIEFS . 1 T ECHNICAL B RIEFS • Reliability Trends of Nano-scaled CMOS Devices • Report on 2015 IEEE International Reliability Physics Symposium • Wide Bandgap Semiconductors, They’re Special RELIABILITY TRENDS OF UPCOMING TECHNICAL MEETINGS . 10 • 2015 IEEE International Integrated Reliability NANO-SCALED CMOS DEVICES Workshop (IIRW) • 2015 IEEE Compound Semiconductor IC GUIDO GROESENEKEN Symposium (CSICS) IMEC AND KU LEUVEN, BELGIUM • 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) SOCIETY NEWS . 13 With the continuous downscaling of CMOS technologies, reliability • EDS Vision and Mission Statements is more and more becoming a major bottleneck and this for several • EDS President’s Message reasons. First of all the electric fields and current and power densi- • Message from EDS Vice President of Regions/ Chapters ties have increased continuously and are now reaching the maxi- • Message from Newsletter Editor-in-Chief mum values that can be allowed for reliable operation. At the same • EDS Governance Meeting Summary time an impressive effort is taking place introducing new materi- • Call for EDS Board of Governors Nominations • EDS Board of Governors Election Process als and novel device architectures to maintain the effective perfor- • IEEE Election Reminder mance scaling. New materials like high k dielectrics and metal gates • EDS Compound Semiconductor Devices and for both logic and memory technologies and novel device concepts Circuits Technical Committee Report • 2015 William R. Cherry Award Winner such as Multiple gate FET’s have already been introduced, while Ge • 42nd Photovoltaic Specialists Conference (PVSC) or III-V materials for high mobility devices are under investigation. Young Professional Award These new materials and devices often have unknown reliability • Congratulations to the EDS Members Recently Elected to IEEE Senior Member Grade behavior and/or introduce new failure mechanisms, whereas their • Enhance Your Career with IEEE Senior Membership speed of introduction exceeds the capabilities to explore their reli- • EDS Guidelines for Distinguished Lectures and ability performance in great detail. Finally, the market is continu- Mini-Colloquia Programs • EDS Chapter Subsidies for 2016 ously demanding higher reliability levels, with single digit failure • IEEE Bring Your Daughters and Sons to Work Day rates in FIT units (1 FIT = 1 failure per 109 operating device hours) • 2015 EDS Award Winners and 2016 Call for Nominations for present technologies. In the past, the technological reliability margins that were available to achieve the required failure rate YOUNG PROFESSIONALS . 29 levels were always sufficiently high, but in some of the technolo- • Reflections from EDS Young Professionals • IEEE Young Professionals—An Exciting New gies under development this becomes more and more cumber- Rebranded Outlook some. In this technical note we review the evolution of reliability • Register Now for Upcoming EDS Webinars! for nanoscaled technologies, and we show that for some failure • New Webinars Available in the Archive • EDS-ETC Report mechanisms the lifetime can no longer be guaranteed. As a result CHAPTER NEWS . 34 alternative ways of reliability assurance will become necessary. • WIMNACT 45—IEEE EDS Mini-Colloquium— As an example of the trends in the electric fields existing in the Yokohama transistors under operating conditions, Fig. 1 shows the evolution • WIMNACT 46—IEEE EDS Mini-Colloquium— Shenzhen over the past 40 years of the oxide and silicon fields as a function • IEEE ED NIST Student Chapter’s 4th Mini-Colloquium of the gate length [1]. • IEEE ED Delhi Chapter’s Mini-Colloquium on Compact Modeling Techniques (continued on page 3) REGIONAL NEWS . 37 EDS MEETINGS CALENDAR . 48 YOUR COMMENTS SOLICITED Your comments are most welcome. Please write directly to the Editor-in-Chief of the Newsletter at [email protected] ELECTRON DEVICES NEWSLETTER SOCIETY EDITORIAL STAFF President Vice President of Publications Editor-In-Chief Albert Z.H. Wang and Products M.K. Radhakrishnan University of California, Riverside Bin Zhao NanoRel E-mail: [email protected] Fairchild Semiconductor E-mail: [email protected] E-mail: [email protected] President-Elect Samar Saha Vice-President of Regions/ REGIONS 1-6, 7 & 9 UK, Middle East & Africa Ultrasolar Technology Chapters Eastern, Northeastern & South- Jonathan Terry E-mail: [email protected] Xing Zhou eastern USA (Regions 1,2 & 3) The University of Edinburgh Nanyang Technological University Mukta Farooq E-mail: [email protected] Treasurer E-mail: [email protected] IBM Systems and Technology Ravi M. Todi E-mail: [email protected] Western Europe Qualcomm Technologies, Inc. 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FPO 2 IEEE Electron Devices Society Newsletter ❍ July 2015 RELIABILITY TRENDS OF NANO-SCALED CMOS DEVICES (continued from page 1) Clearly 3 periods can be distin- guished: a first constant voltage scaling period in the seventies and 1.0E+07 Eox eighties, in which the power supply voltage was not reduced when scal- Esi ing the geometries, and consequent- 1.0E+06 ly the fields increased continuously with scaling. This was followed by a more or less constant field scaling pe- riod, in which the power supply volt- 1.0E+05 ages were reduced with every new technology node, so that the fields Electric field (V/cm) saturated at a certain plateau. Since 1.0E+04 the 65 nm node, however, the power supply voltages are saturating at a level around 1 V, and can no further be reduced because of the non-scal- 1.0E+03 ing sub-threshold slopes of the MOS- 10.00 1.00 0.10 0.01 FET’s. As a result we observe again a Gate length (um) further increase in the electric fields, which starts to put new constraints on the reliability of the devices. More- Fig. 1. Evolution of oxide and silicon electric fields showing 3 different scaling scenario periods [1] over, the power density has also con- tinuously increased, which leads to higher chip temperatures, and conse- 1.6 quently even a stronger acceleration 10.0 of the degradation mechanisms.