Czochralski method
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- Control of Oxygen Impurities in a Continuous-Feeding Czochralski-Silicon Crystal Growth by the Double-Crucible Method
- Crystal Growth
- Module-5 Unit-5 NSNT R&D on Photovoltaic Or Solar Cell
- (12) United States Patent (10) Patent No.: US 7,132,060 B2 Zagumennyi Et Al
- PV Waste Thermal Treatment According to the Circular Economy Concept
- Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation
- Czochralski Growth and Properties of Scintillating Crystals A
- Bibliography on Trace-Element Partitioning Studies
- Growth and Characterization of Single Crystals Across the Batio3-Catio3-Bazro3 Phase Diagram for Lead-Free Piezoelectrics Cong Xin
- Czochralski Process
- Czochralski Growth and Laser Parameters of RE3+-Doped Y2O3
- Run-To-Run Control of the Czochralski Process
- Hydrothermal Crystal Growth of Oxides for Optical Applications Colin Mcmillen Clemson University, [email protected]
- Micro-Pulling-Down-Method-Grown Ce:Licaf Crystal for Side-Pumped Laser Amplifier
- Separation and Recovery of Refined Si from Al–Si Melt by Modified
- Czochralski-Grown Silicon Crystals for Microelectronics A
- Luag Single-Crystal Fiber Grown by the Micro-Pulling Down Method
- Czochralski's Creative Mistake: a Milestone on the Way to the Gigabit Era Jürgen Evers,* Peter Klüfers, Rudolf Staudigl,* and Peter Stallhofer