High Purity Germanium, a Review on Principle Theories and Technical Production Methodologies
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Advances in Photovoltaics: Part 3 SERIES EDITORS
VOLUME NINETY SEMICONDUCTORS AND SEMIMETALS Advances in Photovoltaics: Part 3 SERIES EDITORS EICKE R. WEBER Director Fraunhofer-Institut fur€ Solare Energiesysteme ISE Vorsitzender, Fraunhofer-Allianz Energie Heidenhofstr. 2, 79110 Freiburg, Germany CHENNUPATI JAGADISH Australian Laureate Fellow and Distinguished Professor Department of Electronic Materials Engineering Research School of Physics and Engineering Australian National University Canberra, ACT 0200 Australia VOLUME NINETY SEMICONDUCTORS AND SEMIMETALS Advances in Photovoltaics: Part 3 Edited by GERHARD P. WILLEKE Fraunhofer Institute for Solar Energy Systems ISE, Freiburg, Germany EICKE R. WEBER Fraunhofer Institute for Solar Energy Systems ISE, Freiburg, Germany AMSTERDAM • BOSTON • HEIDELBERG • LONDON NEW YORK • OXFORD • PARIS • SAN DIEGO SAN FRANCISCO • SINGAPORE • SYDNEY • TOKYO Academic Press is an imprint of Elsevier Academic Press is an imprint of Elsevier 32 Jamestown Road, London NW1 7BY, UK 525 B Street, Suite 1800, San Diego, CA 92101-4495, USA 225 Wyman Street, Waltham, MA 02451, USA The Boulevard, Langford Lane, Kidlington, Oxford OX5 1GB, UK First edition 2014 Copyright © 2014 Elsevier Inc. All rights reserved No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying, recording, or any information storage and retrieval system, without permission in writing from the publisher. Details on how to seek permission, further information about the Publisher’s permissions policies and our arrangements with organizations such as the Copyright Clearance Center and the Copyright Licensing Agency, can be found at our website: www.elsevier.com/permissions. This book and the individual contributions contained in it are protected under copyright by the Publisher (other than as may be noted herein). -
Growth of Srb4o7 Crystal Fibers Along the C-Axis by Micro-Pulling-Down Method
crystals Article Growth of SrB4O7 Crystal Fibers along the c-Axis by Micro-Pulling-Down Method Ryouta Ishibashi, Harutoshi Asakawa * and Ryuichi Komatsu Graduate School of Science and Engineering, Yamaguchi University, Yamaguchi 753-8511, Japan; [email protected] (R.I.); [email protected] (R.K.) * Correspondence: [email protected]; Tel.: +81-836-85-9631 Abstract: SrB4O7 (SBO) receives much attention as solid-state ultraviolet lasers for micro-machining, photochemical synthesis, and laser spectroscopy. For the application of SBO, the SBO crystals require the control of twinning to amplify the conversion light. We also expected that the inhibitation of the SrB2O4 appearance was essential. Here, we show the growth of SBO crystals along the c-axis through the micro-pulling-down method while alternating the application of electric fields (E). Without the application, single crystals were grown. At E = 400 V/cm no needle domains of SrB2O4 inside SBO crystals existed; however, composition planes were formed and twin boundaries did not appear. In contrast, the inversion of surface morphology emerged, and the convex size was especially large at 1000 V/cm. These results demonstrate that convection is generated perpendicular to the growth front by alternating the application of electric fields. This surface morphological change contradicts the conventional concept of growth through the micro-pulling-down method. The distance from seed crystals vs. grain density plot also showed that the density did not decrease with a sufficient slope. Consequently, we concluded that the selection of the c-axis as growth faces is not fruitful to fabricate Citation: Ishibashi, R.; Asakawa, H.; twins, and the selection of the growth condition, under which geometrical selection strongly affects, Komatsu, R. -
PV) Technologies
Australian Journal of Basic and Applied Sciences, 8(6) April 2014, Pages: 455-468 AENSI Journals Australian Journal of Basic and Applied Sciences ISSN:1991-8178 Journal home page: www.ajbasweb.com Current State-of-the-Art Solar Photovoltaic (PV) Technologies Banupriya Balasubramanian and A. Mohd Ariffin Center of Renewable Energy (CRE), Universiti Tenaga Nasional (UNITEN), Jalan IKRAM – UNITEN, Kajang, Selangor, Malaysia ARTICLE INFO ABSTRACT Article history: One of the most rapidly emerging renewable energy technologies is solar photovoltaic Received 25 January 2014 (SPV) cell. SPV cell is a specialized semiconductor device that converts visible light or Received in revised form 12 light energy directly into useful electrical energy. This paper work aims to provide a March 2014 comprehensive overview on the current state-of-the-art solar PV technologies. Each Accepted 14 April 2014 technology is reviewed in detail particularly on its use of light absorbing materials Available online 25 April 2014 together with its structure and deposition processes. Furthermore, conversion efficiency, advantages and disadvantages of these technologies are also discussed. This Keywords: comprehensive review is hoped encourage more participation from various parties in Solar PV technologies, Review, SPV, advancing the use of SPV as an alternative to generate electricity. Silicon, Thin film © 2014 AENSI Publisher All rights reserved. To Cite This Article: Banupriya Balasubramanian and A. Mohd Ariffin., Current State-of-the-Art Solar Photovoltaic (PV) Technologies. Aust. J. Basic & Appl. Sci., 8(6): 455-468, 2014 INTRODUCTION Renewable energy is a naturally available energy that replenishes rapidly for instance solar, wind, hydro and biomass. Solar energy is a form of renewable energy that has zero carbon emission and can be produced almost at any time, as long as sunlight is present. -
Development Team
Material science Paper No. : Crystallography & crystal growth Module : Growth from melt II Development Team Prof. Vinay Gupta, Department of Physics and Astrophysics, Principal Investigator University of Delhi, Delhi Prof. P. N. Kotru ,Department of Physics, University of Jammu, Paper Coordinator Jammu-180006 Content Writer Prof. P. N. Kotru ,Department of Physics, University of Jammu, Jammu-180006 Prof Mahavir Singh Department of Physics, Himachal Pradesh Content Reviewer University, Shimla 1 Crystallography & crystal growth Material science Growth from melt II Description of Module Subject Name Physics Paper Name Crystallography & crystal growth Module Name/Title Growth from melt II Module Id 31 2 Crystallography & crystal growth Material science Growth from melt II 31 Bridgman-Stockbarger Growth Technique. 31.1 Introduction The techniques were originated by Bridgman (1925) and Stockbarger (1938) and so are named after them. In these techniques a crucible containing the material to be grown is lowered through a furnace in such a way that the lowest point in the crucible and the solidification surface rises slowly up the crucible. It means that the melt contained in the crucible is progressively frozen to yield a single crystal. The rate of lowering the crucible may range from about 0.1 to 200 mmh─1 but in most of the cases it may range somewhere in between 1-30 mmh─1. There are situations where the movement of the crucible is reversed. In other words, the crucible is raised up through the furnace and so is advantageously applicable for materials which are volatile; the interface with the vapour being the coolest part of the charge. -
An Investigation of the Techniques and Advantages of Crystal Growth
Int. J. Thin. Film. Sci. Tec. 9, No. 1, 27-30 (2020) 27 International Journal of Thin Films Science and Technology http://dx.doi.org/10.18576/ijtfst/090104 An Investigation of the Techniques and Advantages of Crystal Growth Maryam Kiani*, Ehsan Parsyanpour and Feridoun Samavat* Department of Physics, Bu-Ali Sina University, Hamadan, Iran. Received: 2 Aug. 2019, Revised: 22 Nov. 2019, Accepted: 23 Nov. 2019 Published online: 1 Jan. 2020 Abstract: An ideal crystal is built with regular and unlimited recurring of crystal unit in the space. Crystal growth is defined as the phase shift control. Regarding the diverse crystals and the need to produce crystals of high optical quality, several many methods have been proposed for crystal growth. Crystal growth of any specific matter requires careful and proper selection of growth method. Based on material properties, the considered quality and size of crystal, its growth methods can be classified as follows: solid phase crystal growth process, liquid phase crystal growth process which involves two major sub-groups: growth from the melt and growth from solution, as well as vapour phase crystal growth process. Methods of growth from solution are very important. Thus, most materials grow using these methods. Methods of crystal growth from melt are those of Czochralski (tensile), the Kyropoulos, Bridgman-Stockbarger, and zone melting. In growth of oxide crystals with good laser quality, Czochralski method is still predominant and it is widely used in the production of most solid-phase laser materials. Keywords: Crystal growth; Czochralski method; Kyropoulos method; Bridgman-Stockbarger method. A special method is used for each group of elements depending on their usage and importance of their impurity, or consideration of form, impurity and size of crystal. -
3 Single Crystals Using Czochralski Method
Journal of Siberian Federal University. Engineering & Technologies 4 (2009 2) 400-408 ~ ~ ~ УДК 669:621.315.592 Synthesis of Ca4GdO(BO3)3 Single Crystals using Czochralski Method Robert Möckel*, Margitta Hengst, Christoph Reuther and Jens Götze TU Bergakademie Freiberg, Institute of Mineralogy, Brennhausgasse 14, D-09596 Freiberg, Germany 1 Received 16.11.2009, received in revised form 03.12.2009, accepted 18.12.2009 The oxoborate Ca4GdO(BO3)3 (GdCOB) is a potential material for advanced industrial applications because of its optical and electric properties. High quality single crystals of GdCOB have been grown from a melt using the Czochralski method. Single crystals of laboratory scale are of good optical quality showing no macroscopic defects like cracks, inclusions or discolouration. Crystals in [001] direction reveal regular growth, whereas crystals in [010] are of asymmetric shape but show less difficulties during the growth process. Keywords: single crystal growth, Czochralski, oxoborate, Ca4GdO(BO3)3. 1. Introduction First investigations on the system REE2O3–CaO–B2O3 go back to the late 1960s, early 1970s, when Kindermann took care of the whole system [1]. Most of these early syntheses were realized by solid state reactions. Later, Ca4REEO(BO3)3 (REECOB) was synthesized and described by Norrestam & Nygren [2], who produced the materials by simple solid state reactions of stoichiometric mixtures as well. They showed that most trivalent REE like La, Nd, Sm, Gd, Er, and Y fit into the crystal lattice crystallizing isostructurally. First analysis of the crystallographic structures revealed analogies to calcium fluoroborate (Ca5F(BO3)3) and also to well known structure of common fluorapatite (Ca5[F/(PO4)3]). -
Project Title: Embedded Nanocrystal Silicon Films: a New Paradigm for Improving the Stability of Thin-Film Silicon
Suite 1000 ME 111 Church St. SE Minneapolis, MN 55455-0111 Project Title: Embedded Nanocrystal Silicon Films: A New Paradigm for Improving the Stability of Thin-film Silicon Contract Number: RD-3-25 Report Date: 16 Dec 2011 Principal Investigator: Uwe Kortshagen Contract Contact: Amy Rollinger 612-625-4028 612-625-1359 Congressional District: (Corporate office) Minnesota 5th Congressional District: (Project location) Minnesota 5th FINAL REPORT Executive Summary: Under this grant, we pursued two different routes that may help increase the efficiency and lower the cost of thin film silicon solar cells. Our first approach (Track 1) is based on our unique ability to produce silicon nanocrystals in a low-pressure plasma-based synthesis reactor and to embed these nanocrystals in amorphous silicon films. Our novel deposition process enables us to independently control the properties of the amorphous matrix and of the crystalline phase, which we hope will enable us to improve the electronic quality of amorphous silicon that is used in thin film solar cells. In the second approach (Track 2), we study using such embedded nanocrystals as nuclei for seed-induced re-crystallization of amorphous silicon films. We expected that controlling the seed concentration will enable us to grow microcrystalline Si films faster and with grain sizes larger than possible with other deposition approaches. This may enable the cheaper production of solar cells based on microcrystalline silicon. The goals and objectives of this grant were achieved. This research led to two major conclusions: 1. The inclusion of Si nanocrystals into amorphous silicon leads to a mixed phase material that is more resistive to light-induced defect creation than standard amorphous silicon. -
Synthetic Quartz Crystal
Synthetic Quartz Crystal n Terms and Definitions Synthetic Quartz Crystal: A single crystal grown using the Right-handed and left-handed quartz crystals: Crystals are hydrothermal synthesis method. divided into two types: right-handed and left-handed. A As-Grown Quartz Crystal: A synthetic quartz crystal grown difference in optical rotation creates the 2 types, but their naturally with no processing. physical properties are identical. Therefore, by cutting at the Lumbered Quartz Crystal: A synthetic quartz crystal with the X correct angle, the difference does not affect the characteristics and Z surfaces processed according to specified dimensions of a crystal oscillator. Generally right-handed quartz crystals are and angles using a diamond wheel #80. used in manufacture. Y-bar Synthetic Quartz Crystal: A synthetic quartz crystal grown Zone: A zone with a crystal that has grown from a seed crystal at by using a bar-like seed crystal elongated in the Y-axis direction. its core. There are Z, +X, -X, and S zones. Z-plate Synthetic Quartz Crystal: A synthetic quartz crystal Infrared Absorption Coefficient α: This value measured with an grown by using a plate-like seed crystal with a Y-axis direction infrared spectrophotometer is adopted as the infrared absorption length and X-axis direction width. coefficient α of a synthetic quartz crystal. The value is based on Inclusion: A general term for solid constituents (inclusions) that the absorption characteristic of the OH radical of a synthetic exist in synthetic quartz crystal; they can be observed when light quartz crystal that is around 3,800 to 3,000 cm–1 of the infrared is scattered through a liquid with a refractive index that is close transmittance curve. -
INTERNSHIP REPORT Single Crystal Growth of Constantan by Vertical
INTERNSHIP REPORT Single Crystal Growth of Constantan by Vertical Bridgman Method Supervisor: Prof. Henrik Rønnow Laboratory for Quantum Magnetism (LQM) Rahil H. Bharani 08D11004 Third year Undergraduate Metallurgical Engineering and Materials Science IIT Bombay May – July 2011 ACKNOWLEDGEMENT I thank École Polytechnique Fédérale de Lausanne (EPFL) and Prof. Henrik Rønnow, my guide, for having me as an intern here. I have always been guided with every bit of help that I could possibly require. I express my gratitude to Prof. Daniele Mari, Iva Tkalec and Ann-Kathrin Maier for helping me out with my experimental runs and providing valuable insights on several aspects of crystal growth related to the project. I thank Julian Piatek for his help in clearing any doubts that I have had regarding quantum magnetism pertaining to understanding and testing the sample. I am indebted to Neda Nikseresht and Saba Zabihzadeh for teaching me to use the SQUID magnetometer, to Nikolay Tsyrulin for the Laue Camera and Shuang Wang at PSI for the XRF in helping me analyse my samples. I thank Prof. Enrico Giannini at the University of Geneva for helping me with further trials that were conducted there. Most importantly, I thank Caroline Pletscher for helping me with every little thing that I needed and Caroline Cherpillod, Ursina Roder and Prof Pramod Rastogi for co-ordinating the entire internship program. CONTENTS INTRODUCTION REQUIREMENTS OF THE SAMPLE SOME METHODS TO GROW SINGLE CRYSTALS • CZOCHRALSKI • BRIDGMAN • FLOATING ZONE TESTING THE SAMPLES • POLISH AND ETCH • X-RAY DIFFRACTION • LAUE METHOD • SQUID • X-RAY FLUORESCENCE THE SETUP TRIAL 1 TRIAL 2 TRIAL 3 TRIAL 4 Setup, observations, results and conclusions. -
Analysis of Life Cycle Costs and Social Acceptance of Solar Photovoltaic Systems Implementation in Washington State Public Schools
Analysis of Life Cycle Costs and Social Acceptance of Solar Photovoltaic Systems Implementation in Washington State Public Schools Charusheela Ghadge A thesis submitted in partial fulfillment of the requirements for the degree of Master of Science in Construction Management University of Washington 2012 Committee: Yong Woo Kim Ahmed Abdel Aziz Program Authorized to offer Degree: Construction Management University of Washington Abstract Analysis of Life Cycle Costs and Social Acceptance of Solar Photovoltaic Systems Implementation in Washington State Public Schools Charusheela Ghadge Chair of Supervisory Committee: Associate Professor Yong Woo Kim Department of Construction Management Solar photovoltaic (PV) systems are currently the most competent renewable energy methods to retro-fit in and offset electricity for existing and newly constructed school buildings. Amidst the increasing electricity prices every year, depletion of fossil fuels reserves, disturbance in hydrological pattern and damage to present environment, has given stimulation to search for most viable and effectual solution, to offset public schools need for electricity. The present study is focused for state of Washington and in the arena of its public schools. The existing report uses four schools with PV systems as actual case studies. These case studies are evaluated - to understand the Life cycle costs associated and studies the acceptance of PV systems in social context, amongst school community. Two of the four schools examined, show PV systems as economically beneficial while two schools as case studies do not exhibit the same results. Parameters like solar radiation received and peak demand offset by PV, play an essential role in the whole analysis. Based on survey performed, all of the seventeen schools are influenced and have found a newly learning curve – to reinforce renewable ideas at a very young age among students. -
Growth of Piezoelectric Crystals by Czochralski Method D
Growth of piezoelectric crystals by Czochralski method D. Cochet-Muchy To cite this version: D. Cochet-Muchy. Growth of piezoelectric crystals by Czochralski method. Journal de Physique IV Proceedings, EDP Sciences, 1994, 04 (C2), pp.C2-33-C2-45. 10.1051/jp4:1994205. jpa-00252473 HAL Id: jpa-00252473 https://hal.archives-ouvertes.fr/jpa-00252473 Submitted on 1 Jan 1994 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. JOURNAL DE PHYSIQUE IV Colloque C2, supplBment au JournaI de Physique 111, Volume 4, fkvrier 1994 Growth of piezoelectric crystals by Czochralski method D. COCHET-MUCHY Crismatec, Usine de Gikres, 2 me des Essarts, 386610 Gi.?res, France Abstract : The Czochralski method is one of the most widely used industrial technique to grow single-crystals, since it applies to a very large range of compounds, such as semiconductors, oxides, fluorides, etc... Many exhibit piezoelectric properties and some of them find applications in Surface-Acoustic-Waves or Bulk- Acoustic-Waves devices. That explains the large amount of work made on the development of the corresponding growth processes and the high levels of production achieved in the world today. -
IEEE Paper Template in A4 (V1)
3ème conférence Internationale des énergies renouvelables CIER - 2015 Proceedings of Engineering and Technology – PET pp.228-236 Copyright IPCO-2016 Heat and Mass Transfer of the μ-PD Process +3 compared to the Cz technique for Ti : Al2O3 Fiber Crystal Growth. Hanane Azoui 1, Abdellah.Laidoune2, Djamel.Haddad3 and Derradji.Bahloul4 1,2,4Département de Physique, Faculté des Sciences de la Matière, Université de Batna 1. 1Rue Chahid Boukhlouf Mohamed El-Hadi, 05000 Batna, Algeria. 3Département de mécanique, Faculté de l’engineering, Laboratoire (LESEI), , Université de Batna2, Algeria. Corresponding Author: Hanane Azoui, [email protected] Abstract— In this study, we established a numerical two- the system growth plays an important role in determining the dimensional finite volume model, in cylindrical coordinates with an shape and the quality of the growing crystal [1]. In this axisymmetric configuration, to find the optimal conditions to grow work we have studied the heat and the mass transfer in high-quality crystals. We focus on a comparative study of the heat the growth of crystalline fibers of titanium doped sapphire and masse transfer in the growth of Ti+3: Al2O3between two drawn by the micro-pulling down growing technique growing techniques, say the micro-pulling down and Czochralski compared to the Czochralski technique; this study allows us growth techniques.The melt flow, the heat and mass transfer as to know the effect of size and geometry of growth system and well as the interface shapes are modelled by the differential the pulling rate on the quality crystals exactly for equations of conservation of mass, of momentum, energy and the development of laser systems. We chose the species.