Crystal Shape Engineering
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21St American Conference on Crystal Growth and Epitaxy (ACCGE-21)
Program Book 21st American Conference on Crystal Growth and Epitaxy (ACCGE-21) and 18th US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-18) and 3rd Symposium on 2D Electronic Materials and Symposium on Epitaxy of Complex Oxides July 30 – August 4 1 | P a g e Table of Contents Table of Contents ........................................................................................................... 2 Welcome to Santa Fe, New Mexico………………………………...………………………..3 Maps of Conference Area and Resort ............................................................................ 4 Conference Sponsors & Supporters ............................................................................... 7 Conference Exhibitors .................................................................................................... 7 Conference Organizers .................................................................................................. 8 OMVPE Workshop Committee………………………. ...................................................... 9 AACG Organization (2015-2017) ................................................................................. 10 ACCGE Symposia and Organizers .................................................... ………………….11 Plenary Speakers ............................................................................... ………………….13 Award Recipients ............................................................................... ………………….14 Scope and Purpose of the Conferences ...................................................................... -
Growth of Srb4o7 Crystal Fibers Along the C-Axis by Micro-Pulling-Down Method
crystals Article Growth of SrB4O7 Crystal Fibers along the c-Axis by Micro-Pulling-Down Method Ryouta Ishibashi, Harutoshi Asakawa * and Ryuichi Komatsu Graduate School of Science and Engineering, Yamaguchi University, Yamaguchi 753-8511, Japan; [email protected] (R.I.); [email protected] (R.K.) * Correspondence: [email protected]; Tel.: +81-836-85-9631 Abstract: SrB4O7 (SBO) receives much attention as solid-state ultraviolet lasers for micro-machining, photochemical synthesis, and laser spectroscopy. For the application of SBO, the SBO crystals require the control of twinning to amplify the conversion light. We also expected that the inhibitation of the SrB2O4 appearance was essential. Here, we show the growth of SBO crystals along the c-axis through the micro-pulling-down method while alternating the application of electric fields (E). Without the application, single crystals were grown. At E = 400 V/cm no needle domains of SrB2O4 inside SBO crystals existed; however, composition planes were formed and twin boundaries did not appear. In contrast, the inversion of surface morphology emerged, and the convex size was especially large at 1000 V/cm. These results demonstrate that convection is generated perpendicular to the growth front by alternating the application of electric fields. This surface morphological change contradicts the conventional concept of growth through the micro-pulling-down method. The distance from seed crystals vs. grain density plot also showed that the density did not decrease with a sufficient slope. Consequently, we concluded that the selection of the c-axis as growth faces is not fruitful to fabricate Citation: Ishibashi, R.; Asakawa, H.; twins, and the selection of the growth condition, under which geometrical selection strongly affects, Komatsu, R. -
Development Team
Material science Paper No. : Crystallography & crystal growth Module : Growth from melt II Development Team Prof. Vinay Gupta, Department of Physics and Astrophysics, Principal Investigator University of Delhi, Delhi Prof. P. N. Kotru ,Department of Physics, University of Jammu, Paper Coordinator Jammu-180006 Content Writer Prof. P. N. Kotru ,Department of Physics, University of Jammu, Jammu-180006 Prof Mahavir Singh Department of Physics, Himachal Pradesh Content Reviewer University, Shimla 1 Crystallography & crystal growth Material science Growth from melt II Description of Module Subject Name Physics Paper Name Crystallography & crystal growth Module Name/Title Growth from melt II Module Id 31 2 Crystallography & crystal growth Material science Growth from melt II 31 Bridgman-Stockbarger Growth Technique. 31.1 Introduction The techniques were originated by Bridgman (1925) and Stockbarger (1938) and so are named after them. In these techniques a crucible containing the material to be grown is lowered through a furnace in such a way that the lowest point in the crucible and the solidification surface rises slowly up the crucible. It means that the melt contained in the crucible is progressively frozen to yield a single crystal. The rate of lowering the crucible may range from about 0.1 to 200 mmh─1 but in most of the cases it may range somewhere in between 1-30 mmh─1. There are situations where the movement of the crucible is reversed. In other words, the crucible is raised up through the furnace and so is advantageously applicable for materials which are volatile; the interface with the vapour being the coolest part of the charge. -
Epitaxy and Characterization of Sigec Layers Grown by Reduced Pressure Chemical Vapor Deposition
Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition Licentiate Thesis by Julius Hållstedt Stockholm, Sweden 2004 Laboratory of Semiconductor materials, Department of Microelectronics and Information Technology (IMIT), Royal Institute of Technology (KTH) Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition A dissertation submitted to the Royal Institute of Technology, Stockholm, Sweden, in partial fulfillment of the requirements for the degree of Teknologie Licentiat. TRITA-HMA REPORT 2004:1 ISSN 1404-0379 ISRN KTH/HMA/FR-04/1-SE © Julius Hållstedt, March 2004 This thesis is available in electronic version at: http://media.lib.kth.se Printed by Universitetsservice US AB, Stockholm 2004 ii Julius Hållstedt Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition Laboratory of Semiconductor Materials (HMA), Department of Microelectronics and Information Technology (IMIT), Royal Institute of Technology (KTH), Stockholm, Sweden TRITA-HMA Report 2004:1, ISSN 1404-0379, ISRN KTH/HMA/FR-04/1-SE Abstract Heteroepitaxial SiGeC layers have attracted immense attention as a material for high frequency devices during recent years. The unique properties of integrating carbon in SiGe are the additional freedom for strain and bandgap engineering as well as allowing more aggressive device design due to the potential for increased thermal budget during processing. This work presents different issues on epitaxial growth, defect density, dopant incorporation and electrical properties of SiGeC epitaxial layers, intended for various device applications. Non-selective and selective epitaxial growth of Si1-x-yGexCy (0≤x≤0.30, 0≤y≤0.02) layers have been optimized by using high-resolution x-ray reciprocal lattice mapping. -
Single-Crystal Metal Growth on Amorphous Insulating Substrates
Single-crystal metal growth on amorphous insulating substrates Kai Zhanga,1, Xue Bai Pitnera,1, Rui Yanga, William D. Nixb,2, James D. Plummera, and Jonathan A. Fana,2 aDepartment of Electrical Engineering, Stanford University, Stanford, CA 94305; and bDepartment of Materials Science and Engineering, Stanford University, Stanford, CA 94305 Contributed by William D. Nix, December 1, 2017 (sent for review October 12, 2017; reviewed by Hanchen Huang, David J. Srolovitz, and Carl Thompson) Metal structures on insulators are essential components in advanced Our method is based on liquid phase epitaxy, in which the electronic and nanooptical systems. Their electronic and optical polycrystalline metal structures are encapsulated in an amor- properties are closely tied to their crystal quality, due to the strong phous insulating crucible, together with polycrystalline seed dependence of carrier transport and band structure on defects and structures of differing material, and heated to the liquid phase. grain boundaries. Here we report a method for creating patterned As the system cools, the metal solidifies into single crystals. single-crystal metal microstructures on amorphous insulating sub- Liquid phase epitaxy has been previously studied in the context of strates, using liquid phase epitaxy. In this process, the patterned semiconductor-on-oxide growth (24–26), but has not been ex- metal microstructures are encapsulated in an insulating crucible, plored for metal growth. We will examine gold as a model system together with a small seed of a differing material. The system is in this study. Gold is an essential material in electronics and heated to temperatures above the metal melting point, followed by plasmonics because of its high conductivity and chemical inertness. -
6Th International Workshop on Crystal Growth Technology
GERMANY, JUNE 15 - 19 BERLIN 2014 6th International Workshop on Crystal Growth Technology THE FUTURE OF Advances in bulk crystal growth of semiconductor & photovoltaic materials CRYSTAL GROWTH Optical and laser crystals TECHNOLOGY – Scintillators, piezo- and magnetoelectrics BRINGING NEW Substrates for wide band-gap and oxide semiconductors TECHNOLOGIES TO Growth control, quality assurance, and management of resources INDUSTRIAL GROWTH Crystal shaping and layer transfer technologies APPLICATION Frontiers in crystal growth technology Leibniz Institute for International Organization Crystal Growth (IKZ) for Crystal Growth The Organizing Committee would like to acknowledge support provided by CrysTec GmbH Köpenicker Str. 325 D-12555 Berlin, Germany http://www.crystec.de Deutsche Forschungsgemeinschaft e.V. Kennedyallee 40 53175 Bonn, Germany http://www.dfg.de EFG GmbH Beeskowdamm 6 D-14167 Berlin, Germany http://www.efg-berlin.de Leibniz Institute for Crystal Growth Max-Born-Str. 2 D-12489 Berlin, Germany http://www.ikz-berlin.de PVA TePla AG Im Westpark 10 - 12 35435 Wettenberg, Germany http://www.pvatepla.com STR Group, Inc. Engels av. 27, P.O. Box 89, 194156 St. Petersburg, Russia http://www.str-soft.com Systec Johann-Schöner-Str. 73 D-97753 Karlstadt http://www.systec-sa.de Takatori Corporation European Representative JTA Equipment Technology 34 St Peters Wharf Newcastle upon Tyne, NE6 1TW, UK http://www.jta-ltd.com Umicore Electro-Optic Materials Watertorenstraat 33 B-2250, Olen, Belgium http://eom.umicore.com/en/eom/ IWCGT-6 6th International Workshop on Crystal Growth Technology Berlin, Germany June 15 - 19, 2014 Systec Johann-Schöner-Str. 73 D-97753 Karlstadt http://www.systec-sa.de IWCGT-6 2014 3 4 IWCGT-6 2014 Welcome message Dear participants of the IWCGT-6, a warm welcome to you, and sincere thanks that you take part in this exciting event, the 6th International Workshop on Crystal Growth Technology (IWCGT-6) held at June 15-19, 2014 at the Novotel Am Tiergarten, Berlin, Germany. -
Project Title: Embedded Nanocrystal Silicon Films: a New Paradigm for Improving the Stability of Thin-Film Silicon
Suite 1000 ME 111 Church St. SE Minneapolis, MN 55455-0111 Project Title: Embedded Nanocrystal Silicon Films: A New Paradigm for Improving the Stability of Thin-film Silicon Contract Number: RD-3-25 Report Date: 16 Dec 2011 Principal Investigator: Uwe Kortshagen Contract Contact: Amy Rollinger 612-625-4028 612-625-1359 Congressional District: (Corporate office) Minnesota 5th Congressional District: (Project location) Minnesota 5th FINAL REPORT Executive Summary: Under this grant, we pursued two different routes that may help increase the efficiency and lower the cost of thin film silicon solar cells. Our first approach (Track 1) is based on our unique ability to produce silicon nanocrystals in a low-pressure plasma-based synthesis reactor and to embed these nanocrystals in amorphous silicon films. Our novel deposition process enables us to independently control the properties of the amorphous matrix and of the crystalline phase, which we hope will enable us to improve the electronic quality of amorphous silicon that is used in thin film solar cells. In the second approach (Track 2), we study using such embedded nanocrystals as nuclei for seed-induced re-crystallization of amorphous silicon films. We expected that controlling the seed concentration will enable us to grow microcrystalline Si films faster and with grain sizes larger than possible with other deposition approaches. This may enable the cheaper production of solar cells based on microcrystalline silicon. The goals and objectives of this grant were achieved. This research led to two major conclusions: 1. The inclusion of Si nanocrystals into amorphous silicon leads to a mixed phase material that is more resistive to light-induced defect creation than standard amorphous silicon. -
Solid-Phase Epitaxy
Published in Handbook of Crystal Growth, 2nd edition, Volume III, Part A. Thin Films and Epitaxy: Basic Techniques edited by T.F. Kuech (Elsevier North-Holland, Boston, 2015) Print book ISBN: 978-0-444-63304-0; e-book ISBN: 97800444633057 7 Solid-Phase Epitaxy Brett C. Johnson1, Jeffrey C. McCallum1, Michael J. Aziz2 1 SCHOOL OF PHYSICS, UNIVERSITY OF MELBOURNE, VICTORIA, AUSTRALIA; 2 HARVARD SCHOOL OF ENGINEERING AND APPLIED SCIENCES, CAMBRIDGE, MA, USA CHAPTER OUTLINE 7.1 Introduction and Background.................................................................................................... 318 7.2 Experimental Methods ............................................................................................................... 319 7.2.1 Sample Preparation........................................................................................................... 319 7.2.1.1 Heating.................................................................................................................... 321 7.2.2 Characterization Methods................................................................................................ 321 7.2.2.1 Time-Resolved Reflectivity........................................................................................ 321 7.2.2.2 Other Techniques ....................................................................................................323 7.3 Solid-Phase Epitaxy in Si and Ge .............................................................................................. 323 7.3.1 Structure -
Synthetic Quartz Crystal
Synthetic Quartz Crystal n Terms and Definitions Synthetic Quartz Crystal: A single crystal grown using the Right-handed and left-handed quartz crystals: Crystals are hydrothermal synthesis method. divided into two types: right-handed and left-handed. A As-Grown Quartz Crystal: A synthetic quartz crystal grown difference in optical rotation creates the 2 types, but their naturally with no processing. physical properties are identical. Therefore, by cutting at the Lumbered Quartz Crystal: A synthetic quartz crystal with the X correct angle, the difference does not affect the characteristics and Z surfaces processed according to specified dimensions of a crystal oscillator. Generally right-handed quartz crystals are and angles using a diamond wheel #80. used in manufacture. Y-bar Synthetic Quartz Crystal: A synthetic quartz crystal grown Zone: A zone with a crystal that has grown from a seed crystal at by using a bar-like seed crystal elongated in the Y-axis direction. its core. There are Z, +X, -X, and S zones. Z-plate Synthetic Quartz Crystal: A synthetic quartz crystal Infrared Absorption Coefficient α: This value measured with an grown by using a plate-like seed crystal with a Y-axis direction infrared spectrophotometer is adopted as the infrared absorption length and X-axis direction width. coefficient α of a synthetic quartz crystal. The value is based on Inclusion: A general term for solid constituents (inclusions) that the absorption characteristic of the OH radical of a synthetic exist in synthetic quartz crystal; they can be observed when light quartz crystal that is around 3,800 to 3,000 cm–1 of the infrared is scattered through a liquid with a refractive index that is close transmittance curve. -
INTERNSHIP REPORT Single Crystal Growth of Constantan by Vertical
INTERNSHIP REPORT Single Crystal Growth of Constantan by Vertical Bridgman Method Supervisor: Prof. Henrik Rønnow Laboratory for Quantum Magnetism (LQM) Rahil H. Bharani 08D11004 Third year Undergraduate Metallurgical Engineering and Materials Science IIT Bombay May – July 2011 ACKNOWLEDGEMENT I thank École Polytechnique Fédérale de Lausanne (EPFL) and Prof. Henrik Rønnow, my guide, for having me as an intern here. I have always been guided with every bit of help that I could possibly require. I express my gratitude to Prof. Daniele Mari, Iva Tkalec and Ann-Kathrin Maier for helping me out with my experimental runs and providing valuable insights on several aspects of crystal growth related to the project. I thank Julian Piatek for his help in clearing any doubts that I have had regarding quantum magnetism pertaining to understanding and testing the sample. I am indebted to Neda Nikseresht and Saba Zabihzadeh for teaching me to use the SQUID magnetometer, to Nikolay Tsyrulin for the Laue Camera and Shuang Wang at PSI for the XRF in helping me analyse my samples. I thank Prof. Enrico Giannini at the University of Geneva for helping me with further trials that were conducted there. Most importantly, I thank Caroline Pletscher for helping me with every little thing that I needed and Caroline Cherpillod, Ursina Roder and Prof Pramod Rastogi for co-ordinating the entire internship program. CONTENTS INTRODUCTION REQUIREMENTS OF THE SAMPLE SOME METHODS TO GROW SINGLE CRYSTALS • CZOCHRALSKI • BRIDGMAN • FLOATING ZONE TESTING THE SAMPLES • POLISH AND ETCH • X-RAY DIFFRACTION • LAUE METHOD • SQUID • X-RAY FLUORESCENCE THE SETUP TRIAL 1 TRIAL 2 TRIAL 3 TRIAL 4 Setup, observations, results and conclusions. -
Springer Handbook of Crystal Growth
Springer Handbook of Crystal Growth Springer Handbooks provide a concise compilation of approved key information on methods of research, general principles, and functional relationships in physi- cal sciences and engineering. The world’s leading experts in the fields of physics and engineer- ing will be assigned by one or several renowned editors to write the chapters comprising each vol- ume. The content is selected by these experts from Springer sources (books, journals, online content) and other systematic and approved recent publications of physical and technical information. The volumes are designed to be useful as readable desk reference books to give a fast and comprehen- sive overview and easy retrieval of essential reliable key information, including tables, graphs, and bibli- ographies. References to extensive sources are provided. HandbookSpringer of Crystal Growth Govindhan Dhanaraj, Kullaiah Byrappa, Vishwanath Prasad, Michael Dudley (Eds.) With DVD-ROM, 1320 Figures, 134 in four color and 124 Tables 123 Editors Govindhan Dhanaraj ARC Energy 18 Celina Avenue, Unit 17 Nashua, NH 03063, USA [email protected] Kullaiah Byrappa Department of Geology University of Mysore Manasagangotri Mysore 570 006, India [email protected] Vishwanath Prasad University of North Texas 1155 Union Circle #310979 Denton, TX 76203-5017, USA [email protected] Michael Dudley Department of Materials Science & Engineering Stony Brook University Stony Brook, NY 11794-2275, USA [email protected] ISBN: 978-3-540-74182-4 e-ISBN: 978-3-540-74761-1 DOI 10.1007/978-3-540-74761-1 Springer Heidelberg Dordrecht London New York Library of Congress Control Number: 2008942133 c Springer-Verlag Berlin Heidelberg 2010 This work is subject to copyright. -
Effects of Temperature Gradient on Growth of Srb4o7 Crystals by the Micro-Pulling-Down Method
Trans. Mat. Res. Soc. Japan 42[5] 123-126 (2017) Effects of temperature gradient on growth of SrB4O7 crystals by the micro-pulling-down method Sho Inaba, Takaaki Machida, Harutoshi Asakawa, and Ryuichi Komatsu Graduate School of Sciences and Technology for Innovation, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan e-mail: [email protected] SrB4O7 (SBO) shows superior transparency in the vacuum ultraviolet (UV) region, a high radiation damage threshold, and high nonlinearity, and SBO crystals have therefore attracted great interest as materials for low-cost, high-power UV light sources. To use SBO crystals as laser sources, it is essential to grow transparent SBO crystals. Here we show the effects of temperature gradient G on the growth of SBO crystals by the micro-pulling-down method. At low G, SBO crystal fibers were obtained. The density of striations and the size of voids also decreased with decreasing G. These results demonstrate that a low G is essential for growing completely transparent SBO crystal fibers. In addition, we considered the effects of G on the oscillatory growth of SBO crystals in relation to latent heat removal. Key words: Strontium tetraborate, Micro-pulling-down method, Crystal growth, Striation, Void 1. INTRODUCTION 2. EXPERIMENTAL Micromachining technology requires low-cost, The μ-PD furnace system used in this study was the high-power ultraviolet (UV) light sources for various same as that in our previous studies [13, 14]. Fig. 1A applications, such as semiconductor lithography and laser shows the setup of our μ-PD furnace to grow SBO crystals. ablation [1].