Keywords for Journal of Crystal Growth Please Supply up to Six
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Keywords for Journal of Crystal Growth Please supply up to six keywords from this list and insert them below the abstract in the proof of your paper which will be sent to you shortly. Each keyword should be accompanied by the capital letter denoting the category from which the keyword has been selected, e.g. Keywords: A1. Biocrystallization, B1. Nanomaterials. If the keywords from the list are not relevant, authors may choose their own keywords, but each of these should also be accompanied by the capital letter denoting the category into which it falls. The keyword list is also available on the journal homepage: http://www.elsevier.com/locate/jcrysgro. A. PROCESSES INDEX Hydrothermal crystal growth Nitrides Industrial crystallization Organic compounds A1. Fundamental Aspects Laser heated pedestal growth Oxides Liquid encapsulated Czochralski method Perovskites Adsorption Magnetic field assisted Czochralski method Phosphates Atomic force microscopy Microgravity conditions Phosphides Biocrystallization Natural crystal growth Polymers Biomaterials Seed crystals Potassium compounds Characterization Single crystal growth Proteins Computer simulation Stepanov method Quartz Convection Top seeded solution growth Rare earth compounds Crystal morphology Travelling solvent zone growth Salts Crystal structure Verneuil crystal growth Sapphire Crystallites Sodium chloride Defects A3. Thin Film/Epitaxial Growth Sucrose Dendrites Sulfides Desorption Atomic layer epitaxy Tellurites Diffusion Chemical beam epitaxy Thulium compounds Directional solidification Chemical vapor deposition processes Titanium compounds Doping Chloride vapor phase epitaxy Tungstates Etching Graphoepitaxy Tungsten bronzes Eutectics Hot wall epitaxy Vanadates Fluid flows Hydride vapor phase epitaxy Yttrium compounds Growth models Laser epitaxy Zinc compounds Heat transfer High resolution X-ray diffraction Liquid phase epitaxy B2. Materials by Property Class Impurities Low press. metalorganic vapor phase epitaxy Interfaces Metalorganic chemical vapor deposition Light scattering tomography Metalorganic molecular beam epitaxy Acousto-optic materials Line defects Metalorganic vapor phase epitaxy Dielectric materials Low dimensional structures Migration enhanced epitaxy Ferroelectric materials Magnetic fields Molecular beam epitaxy Magnetic materials Mass transfer Organometallic vapor phase epitaxy Magneto-optic materials Morphological stability Pendeoepitaxy Nonlinear optic materials Nanostructures Physical vapor deposition processes Oxide superconducting materials Nucleation Polycrystalline deposition Phosphors Optical microscopy Quantum wells Photorefractive materials Phase diagrams Selective epitaxy Piezoelectric materials Phase equilibria Solid phase epitaxy Scintillator materials Planar defects Superlattices Semiconducting aluminum compounds Point defects Topotaxy Semiconducting cadmium compounds Purification Vapor phase epitaxy Semiconducting gallium arsenide Radiation Semiconducting gallium compounds Recrystallization B. MATERIALS/DEVICES INDEX Semiconducting germanium Reflection high energy electron diffraction Semiconducting III-V materials Roughening B1. Materials by Type Semiconducting II-VI materials Segregation Semiconducting indium compounds Solid solutions Acids Semiconducting indium gallium phosphide Solidification Alloys Semiconducting indium phosphide Solubility Antimonides Semiconducting lead compounds Solvents Aromatic compounds Semiconducting materials Stirring Arsenates Semiconducting mercury compounds Stresses Barium compounds Semiconducting quarternary alloys Substrates Biological macromolcules Semiconducting silicon Supersaturated solutions Biological substances Semiconducting silicon compounds Surfaces Bismuth compounds Semiconducting ternary compounds Surface structure Borates Superconducting materials Surface processes Cadmium compounds Surface structure Calcium compounds B3. Devices Volume defects Cuprates X-ray diffraction Diamond Bipolar transistors X-ray topography Elemental solids Field effect transistors Fullerenes Filters A2. Bulk Crystal Growth Gadolinium compounds Harmonic generators Gallium compounds Heterojunction semiconductor devices Accelerated crucible rotation technique Gems High electron mobility transistors Bridgman technique Germanium silicon alloys Infrared devices Czochralski method Glasses Laser diodes Double crucible technique Halides Light emitting diodes Edge defined film fed growth Inorganic compounds MESFET devices Electrochemical growth Lithium compounds Nonlinear optical Floating zone technique Lysozyme Optical fiber devices Gradient freeze technique Manganites Scintillators Growth from high temperature solutions Metals Solar cells Growth from melt Minerals Solid state lasers Growth from solutions Nanomaterials Growth from vapor Niobates.