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University of Mumbai Examination 2020 Under Cluster 2 (FRCRCE) University of Mumbai Examination 2020 under cluster 2 (FRCRCE) Program: BE Electronics Engineering Curriculum Scheme: Revised 2012 Examination: Final Year Semester VII Course Code: EXC702 and Course Name: IC Technology Time: 1hour Max. Marks: 50 Note to the students:- All the Questions are compulsory and carry equal marks . Q1. Frenkel defect belongs to which of the following classes? Option A: Point defect Option B: Linear dislocation Option C: Interfacial defect Option D: Bulk defect Q2. A dissolution in which an extra portion of a plane of atoms or a half plane terminates within a crystal is called as ________ Option A: Edge dislocation Option B: Mixed dislocation Option C: Interfacial dislocation Option D: Screw dislocation Q3. In the process of Czochralski method which of the following relation is appropriate between the melt and the growing crystals? Option A: Melt and the growing crystals are usually not related to each other Option B: Melt and the growing crystals are usually rotated counterclockwise Option C: Melt and the growing crystals are usually rotated clockwise Option D: Melt and the growing crystals are usually kept at a constant position Q4. Which of the following law is used for steady state diffusion? Option A: Fick’s law Option B: Newton’s law of diffusion Option C: Bragg’s law Option D: Charles’s law Q5. The ohmic contacts are deposited by Option A: decomposition Option B: evaporation Option C: deposition Option D: mixing Q6. Which one of the following is the main factor for reducing the latch-up effect? Option A: reduced p-well resistance Option B: reduced n-well resistance Option C: increased n-well resistance 1 | P a g e University of Mumbai Examination 2020 under cluster 2 (FRCRCE) Option D: increased p-well resistance Q7. To grow the polysilicon gate layer, which of the following chemical is used for chemical vapour deposition? Option A: Silicon Nitride(Si3N4) Option B: Silane gas(SiH4) Option C: Silicon oxide Option D: Hydrofluoric acid Q8. Which method is most suitable for silicon crystal growth in silicon wafer preparation? Option A: Float zone process Option B: Bridgeman-Stockbarger method Option C: Czochralski crystal growth process Option D: Laser heated pedestal growth Q9. Which is considered to be serious disadvantages of thin film capacitor, when Al2O3is used as dielectric? Option A: Additional fabrication step required Option B: It require over voltage protection Option C: Higher dielectric constant value is required Option D: It requires short circuit protection Q10. The flow of current in Schottky barrier diode is due to Option A: Majority and Minority carriers Option B: Majority carriers Option C: Minority carriers Option D: Positive Ion Q11. During ion implantation process (before the ion strike the wafer) the accelerated ions are passed through Option A: Strong Electric field Option B: Strong Magnetic field Option C: Strong Electric and Magnetic Field Option D: No field Q12. The diameter of the nano wire is about __________ Option A: 10-6m Option B: 10-3m Option C: 10-8m Option D: 10-9m Q13. CNT s are the strongest and stiffest materials in ___________ Option A: Tensile strength Option B: Ductility Option C: Elasticity Option D: Energy 2 | P a g e University of Mumbai Examination 2020 under cluster 2 (FRCRCE) Q14. The graphite is __________ Option A: Paramagnetic Option B: Diamagnetic Option C: Ferromagnetic Option D: Ferromagnetic Q15. Which is NOT true for CVD? Option A: Chemical reaction occurs at the substrate surface Option B: Multiple precursor in vapor state is needed Option C: Substrate or chamber is heated Option D: Target and deposit composition are the same Q16. In sputtering, the target serves as the: Option A: Cathode Option B: Anode Option C: Neutral electrode Option D: Reactor Q17. Identify the method from below which is not a typical PVD technique: Option A: Direct current (DC) evaporation Option B: Electro-plating Option C: Ion plating Option D: RF sputtering Q18. Which one of the following process is preferred to form gate Dielectric(SiO2) ofMOSFTs Option A: Sputtering Option B: Dry Oxidation Option C: Wet Oxidation Option D: Molecular Beam Epitaxy Q19. For Mos fabrication , which orientation of silicon is preferred Option A: (100) Option B: (111) Option C: (110) Option D: (101) Q20. Transistor density is roughly increasing every two years by Option A: Two times Option B: Three times Option C: Four times Option D: Ten times Q21. Which method is used to measure resistivity type of semiconductor Option A: Hot probe method Option B: Four probe method Option C: Hall effect method 3 | P a g e University of Mumbai Examination 2020 under cluster 2 (FRCRCE) Option D: The Haynes-Shockley Experiment Q22. BiCMOS can be used in __________ Option A: amplifying circuit Option B: driver circuits Option C: divider circuit Option D: multiplier circuit Q23. N-well is formed by __________ Option A: decomposition Option B: diffusion Option C: dispersion Option D: filtering Q24. The addition of ______ improves the observability. Option A: adders Option B: multiplexers Option C: multipliers Option D: demultiplexers Q25. For device isolation , Which technique is the best Option A: thick oxide Option B: LOCOS Option C: shallow trench Option D: Masking 4 | P a g e .
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