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Resistive Memory I 2019년 2월 15일(금), 09:00~10:45 Room A (아라홀, 2층) K. Memory (Design & Process Technology) 분과 [FA1-K] Resistive Memory I [초청] FA1-K-1 Stateful In-Memory Computing in Emerging Crossbar Memories 09:00~09:30 Kyung Min Kim Department of Materials Science and Engineering, KAIST High Performance of 1D-1R Memristor through Localized Ti-Doped NiO FA1-K-2 Layer with InZnOx/CuOx Oxide Diode 09:30~09:45 Minho Song1,2, Taekwang Kim1, David H. Seo2, Sunae Seo1, and Myoung-Jae Lee2 1Department of Physics, Sejong University, 2Research Institute, DGIST + Design and Switching Characteristics Analysis of 3D Vertical W/SiNx/n - Si/p-Si 1D1R Unipolar RRAM 1 1 1 1 1 FA1-K-3 Chae Soo Kim , Suhyun Bang , Tae-Hyeon Kim , Kyungkyu Min , Min-Hwi Kim , Dong Keun Lee1, Yeon-Joon Choi1, Kyungho Hong1, Sungjun Kim2, and Byung- 09:45~10:00 Gook Park1 1Department of Electrical and Computer Engineering, Seoul National University, 2School of Electronics Engineering, Chungbuk National University Effect of Doping in HfOx Based ReRAM Sung Yeon Ryu1, Hee Ju Yun1, Woo Young Park2, Soo Gil Kim2, Jaehyun Han2, Se FA1-K-4 Ho Lee2, and Byung Joon Choi1 10:00~10:15 1Department of Materials Science and Engineering, Seoul National University of Science and Technology, 2SK Hynix Forming-Free Gradual Resistance Switching Properties of Al2O3/AZO Junction with Various Al2O3 Thicknesses FA1-K-5 Taekwang Kim, Somyeong Shin, Hyewon Du, Minho Song, Seonyeong Kim, 10:15~10:30 Hansung Kim, Dayin Kang, and Sunae Seo Department of Physics, Sejong University Resistive Switching Characteristics Improvement in a TiO2-Based ReRAM FA1-K-6 Device by Nitrogen Doping 10:30~10:45 Euyjin Park, Jaehyeun Park, Donggyu Jin, Kyu Hyun Han, and Hyun-Yong Yu School of Electrical Engineering, Korea University 2019년 2월 15일(금), 11:00~12:30 Room A (아라홀, 2층) K. Memory (Design & Process Technology) 분과 [FA2-K] Resistive Memory II SPICE Compact Model of the IGZO Memristor Considering both the Metal Electrode and the Process Sequence of the Deposition of Metal FA2-K-1 and IGZO Film 11:00~11:15 Jun Tae Jang, Jungi Min, Donguk Kim, Jingyu Park, Sung-Jin Choi, Dong Myong Kim, and Dae Hwan Kim School of Electrical Engineering., Kookmin University Demonstration of both the Digital and Analog Memory Operations of the IGZO Resistive-Switching Devices by A Control of Metal Electrode/IGZO FA2-K-2 Combination 11:15~11:30 Jungi Min, Jun Tae Jang, Donguk Kim, Jingyu Park, Sung-Jin Choi, Dong Myong Kim, and Dae Hwan Kim School of Electrical Engineering, Kookmin University Inorganically Connected NiO Nanocrystal for Flexible Resistive Memory(ReRAM) FA2-K-3 Hye-Won Yun1,2, Haneun Kim2, Soo-Jung Kim2, SoongJu Oh2, and Sung-Hoon 11:30~11:45 Hong1 1ICT Materials Research Group, ETRI, 2Department of Materials Science and Engineering, Korea University Flexible Resistive Switching Memory Devices based on Solution-Processed FA2-K-4 Metal-Oxide Dielectric Films Fabricated at Low Temperature 11:45~12:00 Byoung-Soo Yu, Sang-Joon Park, and Tae-Jun Ha Department of Electronic Materials Engineering, Kwangwoon University A Study on Resistive Random Access Memory(ReRAM) based on Cross- FA2-K-5 Linked PVA Doped with Reduced Graphene Oxides(RGOs) 12:00~12:15 Jinheon Jeong, Seung Yeob Kim, Kim Yeong Eun, and Sung Hun Jin Department of Electronic Engineering, Incheon National University Effects of Cu Dopant on Bipolar Resistive Switching in Oxygenated Amorphous Carbon Layer FA2-K-6 Da Seul Hyeon, Gabriel Jang, Taeyoon Kim, and Jinpyo Hong 12:15~12:30 Novel Functional Materials and Devices Lab, Department of Physics, Hanyang University 2019년 2월 15일(금), 15:30~17:15 Room A (아라홀, 2층) K. Memory (Design & Process Technology) 분과 [FA3-K] Memory Technologies [초청] FA3-K-1 Spin Torque Devices for Future Non-volatile Memories 15:30~16:00 Kon-Woo Kwon Department of Computer Engineering, Hongik University Analytical Current-Voltage Model for Gate-All-Around Transistor with FA3-K-2 Poly-Silicon Channel 16:00~16:15 Yoongeun Seon, Jaehun Kim, Jaehyun Lee, and Jongwook Jeon Department of Electrical and Electronic Engineering, Konkuk University Power Efficient TCAM Using Separate Bulk Scheme Sung-Yong Kim1, Cheol Kim1,2, Jisu Min1, Seung-Kwang Hong1, and Kee-Won FA3-K-3 Kwon1 16:15~16:30 1College of Information and Communication Engineering, Sungkyunkwan University, 2Memory Division, Samsung Electronics Co., Ltd. The Semiconductors Recycling is the Gold Mining in Urban Area FA3-K-4 Tae Kyung Kwon, Young Ho Kwon, and Monyo John Wonder Mensah Kwaku 16:30~16:45 Department of Product Marketing, MicroMicroChips llc, USA Effect of Diammonium Hydrogen Phosphate on Selectivity Between Si3N4 and Poly-Si High Selectivity CMP Slurry FA3-K-5 Hae-Won, Nam1, Sang-Su Yun1, Gi-Ppeum Jeong1, Jin-Hyung Park2, and Jea-Gun 16:45~17:00 Park1 1Advanced Semiconductor Materials and Devices Development Center, Hanyang University, 2UB Materials Inc. Flash Memory Operation with C-Axis Aligned Crystalline IGZO (CAAC- IGZO) Thin Film Channel Material Prepared by Metal-Induced FA3-K-6 Crystallization 17:00~17:15 Hoonhee Han1, Hyungju Soel2, Jae Kyeong Jeong2, and Changhwan Choi1 1Division of Materials Science and Engineering, Hangyang University, 2Department of Electronic Engineering, Hangyang University 2019년 2월 15일(금), 09:00~10:45 Room B (마루홀, 2층) G. Device & Process Modeling, Simulation and Reliability 분과 [FB1-G] Advanced Devices II : Nano Devices Observation of Mobility and Velocity Behaviors in Ultra Scaled Lg=15 nm FB1-G-1 Silicon Nanowire pMOSFETs with Different Channel Diameters 09:00~09:15 Seunghwan Lee, Jun-Sik Yoon, Jinsu Jeong, and Rock-Hyun Baek Department of Electrical Engineering, POSTECH Interplay Between Line Edge Roughness and Interface Traps in Nanoplate VFETs Yeaji Yoo1,2, Kyul Ko1,2, Myounggon Kang3, Jongwook Jeon4, and Hyungcheol FB1-G-2 Shin1,2 09:15~09:30 1Inter-University Semiconductor Research Center, Seoul Natioanl University, 2School of Electrical Engineering and Computer Science, Seoul National University, 3Department of Electronics Engineering, Korea National University of Transportation, 4Department The Parametric Study of Armchair Graphene Nanoribbon FET by NEGF FB1-G-3 Method 09:30~09:45 Ji-Hyun Hur Department of Electrical Engineering, Sejong University Si-Based Promising Two Dimensional Device : Si/GaP nFET FB1-G-4 Bokyeom Kim and Mincheol Shin 09:45~10:00 School of Electrical Engineering, KAIST Optimization of Vertical Nanowire Transistors for 3.5 nm Technology Node Jaeyeol Park1,2, Changbeom Woo1,2, Shinkeun Kim1,2, Dongjun Lee1,2, Myounggon FB1-G-5 Kang3, Jongwook Jeon4, and Hyungcheol Shin1,2 10:00~10:15 1Inter-University Semiconductor Research Center, Seoul National University, 2School of Electrical Engineering and Computer Science, Seoul National University, 3Department of Electronics Engineering, Korea National University of Transportation, 4Department of Electronics Engineering, Konkuk University First Principles Based Simulation of van der Waals MoS2-MoTe2 Hetero- FB1-G-6 Bilayer Tunnel FETs 10:15~10:30 Ganghyuk Lee and Mincheol Shin School of Electrical Engineering, KAIST Effect of Low Temperature on the Electron Mobility Enhancement of FB1-G-7 Strained-Si Nanowire Transistors 10:30~10:45 Geon-Tae Jang and Sung-Min Hong School of Electrical Engineering and Computer Science, GIST 2019년 2월 15일(금), 11:00~12:30 Room B (마루홀, 2층) G. Device & Process Modeling, Simulation and Reliability 분과 [FB2-G] Advanced Devices III : Technology & Simulation RDF/LER-Induced Performance Variation-Immune Effect of Metal- Interlayer-Semiconductor Source/Drain on n-Ge Junctionless Field-Effect FB2-G-1 Transistor 11:00~11:15 Seung-Geun Jung, Mu-Yeoung Son, Hyeok Jeon, Tae-Hyun Kim, Young-Hun Shin, and Hyun-Yong Yu Department of Electronic Engineering, Korea University A Development of High Reliability HV ESD Power Clamp for Large Display FB2-G-2 Driver Ics 11:15~11:30 Wonsuk Park, Jungwoo Han, Jowoon Lee, Youngchul Kim, and Joontae Jang Department of Electronic Engineering, DB HiTek Domain Wall Dynamics for Transient NC Effect in Ferroelectric BaTiO3 Thin Films 1,2 1,2 1,2 1,2 FB2-G-3 Hyeon Woo Park , Yong Bin Lee , Jangho Roh , Keum Do Kim , Young Hwan Lee1,2, Seung Dam Hyun1,2, Baeksu Kim1,2, Ho Hyeon Kim1,2, Beom Yong Kim1,2, 11:30~11:45 Taehwan Moon1,2, and Cheol Seong Hwang1,2 1Department of Material Science and Engineering, Seoul National University, 2Inter-University Semiconductor Research Center, Seoul National University Effect of Boron and Gallium Doping on the Lattice Parameters in Si and FB2-G-4 Si1-xGex 11:45~12:00 Minhyeong Lee and Dae-Hong Ko Department of Materials Science and Engineering, Yonsei University Analytical Model of Static I-V and Flicker Noise for Tunnel Field-Effect Transistors 1 2 3 3 FB2-G-5 Young-Hun Park , Hyeong-Sub Song , Dong-Hwan Lim , Chang-Hwan Choi , Hi- Deok Lee2, and Ji-Woon Yang1 12:00~12:15 1Department of Electronic & Information Engineering, Korea University, 2Department of Electronic Engineering, Chungnam National University, 3Division of Mater. Sci. and Engineering, Hanyang University Performance Improvement of Low Frequency Noise Characteristics in Gate-Last FDSOI Tunneling Field Effect Transistor with Deuterium FB2-G-6 Passivation Hyeong-Sub Song1, So-Yeong Kim1, Sung-Kyu Kwon1, Hyun-Dong Song1, 12:15~12:30 Gawon Lee1, Dong-Hwan Lim2, Chang-Hwan Choi2, and Hi-Deok Lee1 1Department of Electronics Engineering, Chungnam National University, 2Division of Materials Science and Engineering, Hanyang University 2019년 2월 15일(금), 15:30~17:15 Room B (마루홀, 2층) G. Device & Process Modeling, Simulation and Reliability 분과 [FB3-G] Modeling
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