Common Collector (Emitter Follower) Amplifier
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Design of a Low Voltage Class-AB CMOS Super Buffer Amplifier with Sub Threshold and Leakage Control Rakesh Gupta
International Journal of Engineering Trends and Technology (IJETT) – Volume 7 Number 1- Jan 2014 Design of a Low Voltage Class-AB CMOS Super Buffer Amplifier with Sub Threshold and Leakage Control Rakesh Gupta Assistant Professor, Electrical and Electronic Department, Uttar Pradesh Technical University, Lucknow Uttar Pradesh, India Abstract-- common problems like input common mode range, This paper describes a CMOS analogy voltage supper output swing, and linearity of the device. In the buffer designed to have extremely low static current resulting form to implement the desired analogue Consumption as well as high current drive capability. A device we apply the CMOS technology with low new technique is used to reduce the leakage power of voltage and low power techniques. Voltage supper class-AB CMOS buffer circuits without affecting dynamic power dissipation. The name of applied buffers are essential building blocks in analog and technique is TRANSISTOR GATING TECHNIQUE, mixed-signal circuits and processing systems, which gives the high speed buffer with the reduced low especially for applications where the weak signal power dissipation (1.105%), low leakage and reduced needs to be delivered to a large capacitive load area (3.08%) also. The proposed buffer is simulated at without being distorted To achieve higher density and 45nm CMOS technology and the circuit is operated at performance and lower power consumption, CMOS 3.3V supply[11]. Consumption is comparable to the devices have been scaled for more than 30 years. switching component. Reports indicate that 40% or Transistor delay times have decreased by more than even higher percentage of the total power consumption 30% per technology generation resulting in doubling is due to the leakage of transistors. -
PH-218 Lec-12: Frequency Response of BJT Amplifiers
Analog & Digital Electronics Course No: PH-218 Lec-12: Frequency Response of BJT Amplifiers Course Instructors: Dr. A. P. VAJPEYI Department of Physics, Indian Institute of Technology Guwahati, India 1 High frequency Response of CE Amplifier At high frequencies, internal transistor junction capacitances do come into play, reducing an amplifier's gain and introducing phase shift as the signal frequency increases. In BJT, C be is the B-E junction capacitance, and C bc is the B-C junction capacitance. (output to input capacitance) At lower frequencies, the internal capacitances have a very high reactance because of their low capacitance value (usually only a few pf) and the low frequency value. Therefore, they look like opens and have no effect on the transistor's performance. As the frequency goes up, the internal capacitive reactance's go down, and at some point they begin to have a significant effect on the transistor's gain. High frequency Response of CE Amplifier When the reactance of C be becomes small enough, a significant amount of the signal voltage is lost due to a voltage-divider effect of the source resistance and the reactance of C be . When the reactance of Cbc becomes small enough, a significant amount of output signal voltage is fed back out of phase with the input (negative feedback), thus effectively reducing the voltage gain. 3 Millers Theorem The Miller effect occurs only in inverting amplifiers –it is the inverting gain that magnifies the feedback capacitance. vin − (−Av in ) iin = = vin 1( + A)× 2π × f ×CF X C Here C F represents C bc vin 1 1 Zin = = = iin 1( + A)× 2π × f ×CF 2π × f ×Cin 1( ) Cin = + A ×CF 4 High frequency Response of CE Amp.: Millers Theorem Miller's theorem is used to simplify the analysis of inverting amplifiers at high-frequencies where the internal transistor capacitances are important. -
Common Drain - Wikipedia, the Free Encyclopedia 10-5-17 下午7:07
Common drain - Wikipedia, the free encyclopedia 10-5-17 下午7:07 Common drain From Wikipedia, the free encyclopedia In electronics, a common-drain amplifier, also known as a source follower, is one of three basic single- stage field effect transistor (FET) amplifier topologies, typically used as a voltage buffer. In this circuit the gate terminal of the transistor serves as the input, the source is the output, and the drain is common to both (input and output), hence its name. The analogous bipolar junction transistor circuit is the common- collector amplifier. In addition, this circuit is used to transform impedances. For example, the Thévenin resistance of a combination of a voltage follower driven by a voltage source with high Thévenin resistance is reduced to only the output resistance of the voltage follower, a small resistance. That resistance reduction makes the combination a more ideal voltage source. Conversely, a voltage follower inserted between a small load resistance and a driving stage presents an infinite load to the driving stage, an advantage in coupling a voltage signal to a small load. Characteristics At low frequencies, the source follower pictured at right has the following small signal characteristics.[1] Voltage gain: Current gain: Input impedance: Basic N-channel JFET source Output impedance: (the parallel notation indicates the impedance follower circuit (neglecting of components A and B that are connected in parallel) biasing details). The variable gm that is not listed in Figure 1 is the transconductance of the device (usually given in units of siemens). References http://en.wikipedia.org/wiki/Common_drain Page 1 of 2 Common drain - Wikipedia, the free encyclopedia 10-5-17 下午7:07 1. -
Cascode Amplifiers by Dennis L. Feucht Two-Transistor Combinations
Cascode Amplifiers by Dennis L. Feucht Two-transistor combinations, such as the Darlington configuration, provide advantages over single-transistor amplifier stages. Another two-transistor combination in the analog designer's circuit library combines a common-emitter (CE) input configuration with a common-base (CB) output. This article presents the design equations for the basic cascode amplifier and then offers other useful variations. (FETs instead of BJTs can also be used to form cascode amplifiers.) Together, the two transistors overcome some of the performance limitations of either the CE or CB configurations. Basic Cascode Stage The basic cascode amplifier consists of an input common-emitter (CE) configuration driving an output common-base (CB), as shown above. The voltage gain is, by the transresistance method, the ratio of the resistance across which the output voltage is developed by the common input-output loop current over the resistance across which the input voltage generates that current, modified by the α current losses in the transistors: v R A = out = −α ⋅α ⋅ L v 1 2 β + + + vin RB /( 1 1) re1 RE where re1 is Q1 dynamic emitter resistance. This gain is identical for a CE amplifier except for the additional α2 loss of Q2. The advantage of the cascode is that when the output resistance, ro, of Q2 is included, the CB incremental output resistance is higher than for the CE. For a bipolar junction transistor (BJT), this may be insignificant at low frequencies. The CB isolates the collector-base capacitance, Cbc (or Cµ of the hybrid-π BJT model), from the input by returning it to a dynamic ground at VB. -
I. Common Base / Common Gate Amplifiers
I. Common Base / Common Gate Amplifiers - Current Buffer A. Introduction • A current buffer takes the input current which may have a relatively small Norton resistance and replicates it at the output port, which has a high output resistance • Input signal is applied to the emitter, output is taken from the collector • Current gain is about unity • Input resistance is low • Output resistance is high. V+ V+ i SUP ISUP iOUT IOUT RL R is S IBIAS IBIAS V− V− (a) (b) B. Biasing = /α ≈ • IBIAS ISUP ISUP EECS 6.012 Spring 1998 Lecture 19 II. Small Signal Two Port Parameters A. Common Base Current Gain Ai • Small-signal circuit; apply test current and measure the short circuit output current ib iout + = β v r gmv oib r − o ve roc it • Analysis -- see Chapter 8, pp. 507-509. • Result: –β ---------------o ≅ Ai = β – 1 1 + o • Intuition: iout = ic = (- ie- ib ) = -it - ib and ib is small EECS 6.012 Spring 1998 Lecture 19 B. Common Base Input Resistance Ri • Apply test current, with load resistor RL present at the output + v r gmv r − o roc RL + vt i − t • See pages 509-510 and note that the transconductance generator dominates which yields 1 Ri = ------ gm µ • A typical transconductance is around 4 mS, with IC = 100 A • Typical input resistance is 250 Ω -- very small, as desired for a current amplifier • Ri can be designed arbitrarily small, at the price of current (power dissipation) EECS 6.012 Spring 1998 Lecture 19 C. Common-Base Output Resistance Ro • Apply test current with source resistance of input current source in place • Note roc as is in parallel with rest of circuit g v m ro + vt it r − oc − v r RS + • Analysis is on pp. -
Dynamic Microphone Amplifier
Dynamic Microphone Preamp Description: A low noise pre-amplifier suitable for amplifying dynamic microphones with 200 to 600 ohm output impedance. Notes: This is a 3 stage discrete amplifier with gain control. Alternative transistors such as BC109C, BC548, BC549, BC549C may be used with little change in performance. The first stage built around Q1 operates in common base configuration. This is unusuable in audio stages, but in this case, it allows Q1 to operate at low noise levels and improves overall signal to noise ratio. Q2 and Q3 form a direct coupled amplifier, similar to my earlier mic preamp . Input and Output Impedance: As the signal from a dynamic microphone is low typically much less than 10mV, then there is little to be gained by setting the collector voltage voltage of Q1 to half the supply voltage. In power amplifiers, biasing to half the supply voltage allows for maximum voltage swing, and highest overload margin, but where input levels are low, any value in the linear part of the operating characteristics will suffice. Here Q1 operates with a collector voltage of 2.4V and a low collector current of around 200uA. This low collector current ensures low noise performance and also raises the input impedance of the stage to around 400 ohms. This is a good match for any dynamic microphone having an impedances between 200 and 600 ohms. The output impedance at Q3 is low, the graph of input and output impedance versus frequency is shown below: Gain and Frequency Response: The overall gain of this pre-amplifier is around +39dB or about 90 times. -
Lecture23-Amplifier Frequency Response.Pptx
EE105 – Fall 2014 Microelectronic Devices and Circuits Prof. Ming C. Wu [email protected] 511 Sutardja Dai Hall (SDH) Lecture23-Amplifier Frequency Response 1 Common-Emitter Amplifier – ωH Open-Circuit Time Constant (OCTC) Method At high frequencies, impedances of coupling and bypass capacitors are small enough to be considered short circuits. Open-circuit time constants associated with impedances of device capacitances are considered instead. 1 ωH ≅ m ∑RioCi i=1 where Rio is resistance at terminals of ith capacitor C with all other v ! R $ i R = x = r #1+ g R + L & capacitors open-circuited. µ 0 π 0 m L ix " rπ 0 % For a C-E amplifier, assuming C = 0 L 1 1 ωH ≅ = Rπ 0 = rπ 0 Rπ 0Cπ + Rµ 0Cµ rπ 0CT Lecture23-Amplifier Frequency Response 2 1 Common-Emitter Amplifier High Frequency Response - Miller Effect • First, find the simplified small -signal model of the C-E amp. • Replace coupling and bypass capacitors with short circuits • Insert the high frequency small -signal model for the transistor ! # rπ 0 = rπ "rx +(RB RI )$ Lecture23-Amplifier Frequency Response 3 Common-Emitter Amplifier – ωH High Frequency Response - Miller Effect (cont.) v R r Input gain is found as A = b = in ⋅ π i v R R r r i I + in x + π R || R || (r + r ) r = 1 2 x π ⋅ π RI + R1 || R2 || (rx + rπ ) rx + rπ Terminal gain is vc Abc = = −gm (ro || RC || R3 ) ≅ −gm RL vb Using the Miller effect, we find CeqB = Cµ (1− Abc )+Cπ (1− Abe ) the equivalent capacitance at the base as: = Cµ (1−[−gm RL ])+Cπ (1− 0) = Cµ (1+ gm RL )+Cπ Chap 17-4 Lecture23-Amplifier Frequency Response 4 2 Common-Emitter Amplifier – ωH High Frequency Response - Miller Effect (cont.) ! # • The total equivalent resistance ReqB = rπ 0 = rπ "rx +(RB RI )$ at the base is • The total capacitance and CeqC = Cµ +CL resistance at the collector are ReqC = ro RC R3 = RL • Because of interaction through 1 ω = Cµ, the two RC time constants p1 ! # rπ 0 "Cπ +Cµ (1+ gm RL )$+ RL (Cµ +CL ) interact, giving rise to a dominant pole. -
Notes on BJT & FET Transistors
Phys2303 L.A. Bumm [ver 1.1] Transistors (p1) Notes on BJT & FET Transistors. Comments. The name transistor comes from the phrase “transferring an electrical signal across a resistor.” In this course we will discuss two types of transistors: The Bipolar Junction Transistor (BJT) is an active device. In simple terms, it is a current controlled valve. The base current (IB) controls the collector current (IC). The Field Effect Transistor (FET) is an active device. In simple terms, it is a voltage controlled valve. The gate-source voltage (VGS) controls the drain current (ID). Regions of BJT operation: Cut-off region: The transistor is off. There is no conduction between the collector and the emitter. (IB = 0 therefore IC = 0) Active region: The transistor is on. The collector current is proportional to and controlled by the base current (IC = βIC) and relatively insensitive to VCE. In this region the transistor can be an amplifier. Saturation region: The transistor is on. The collector current varies very little with a change in the base current in the saturation region. The VCE is small, a few tenths of volt. The collector current is strongly dependent on VCE unlike in the active region. It is desirable to operate transistor switches will be in or near the saturation region when in their on state. Rules for Bipolar Junction Transistors (BJTs): • For an npn transistor, the voltage at the collector VC must be greater than the voltage at the emitter VE by at least a few tenths of a volt; otherwise, current will not flow through the collector-emitter junction, no matter what the applied voltage at the base. -
Lecture 19 Common-Gate Stage
4/7/2008 Lecture 19 OUTLINE • Common‐gate stage • Source follower • Reading: Chap. 7.3‐7.4 EE105 Spring 2008 Lecture 19, Slide 1Prof. Wu, UC Berkeley Common‐Gate Stage AvmD= gR • Common‐gate stage is similar to common‐base stage: a rise in input causes a rise in output. So the gain is positive. EE105 Spring 2008 Lecture 19, Slide 2Prof. Wu, UC Berkeley EE105 Fall 2007 1 4/7/2008 Signal Levels in CG Stage • In order to maintain M1 in saturation, the signal swing at Vout cannot fall below Vb‐VTH EE105 Spring 2008 Lecture 19, Slide 3Prof. Wu, UC Berkeley I/O Impedances of CG Stage 1 R = in λ =0 RRout= D gm • The input and output impedances of CG stage are similar to those of CB stage. EE105 Spring 2008 Lecture 19, Slide 4Prof. Wu, UC Berkeley EE105 Fall 2007 2 4/7/2008 CG Stage with Source Resistance 1 g vv= m Xin1 + RS gm 1 vv g AgR==out x m vmD1 vvxin + RS gm R gR ==D mD 1 1+ gRmS + RS gm • When a source resistance is present, the voltage gain is equal to that of a CS stage with degeneration, only positive. EE105 Spring 2008 Lecture 19, Slide 5Prof. Wu, UC Berkeley Generalized CG Behavior Rgout= (1++g mrR O) S r O • When a gate resistance is present it does not affect the gain and I/O impedances since there is no potential drop across it (at low frequencies). • The output impedance of a CG stage with source resistance is identical to that of CS stage with degeneration. -
High-Speed Rail-To-Rail Class-AB Buffer Amplifier with Compact
electronics Article High-Speed Rail-to-Rail Class-AB Buffer Amplifier with Compact, Adaptive Biasing for FPD Applications Chang-Ho An 1,* and Bai-Sun Kong 2,3,* 1 Department of Digital Electronics, Daelim University College, 29 Imgok-ro, Dongan-gu, Anyang-si 13916, Gyeonggi-do, Korea 2 Department of Electrical and Computer Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, Gyeonggi-do, Korea 3 Department of Artificial Intelligence, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, Gyeonggi-do, Korea * Correspondence: [email protected] (C.-H.A.); [email protected] (B.-S.K.) Received: 21 October 2020; Accepted: 25 November 2020; Published: 29 November 2020 Abstract: A high-slew-rate, low-power, CMOS, rail-to-rail buffer amplifier for large flat-panel-display (FPD) applications is proposed. The major circuit of the output buffer is a rail-to-rail, folded-cascode, class-AB amplifier which can control the tail current source using a compact, novel, adaptive biasing scheme. The proposed output buffer amplifier enhances the slew rate throughout the entire rail-to-rail input signal range. To obtain a high slew rate and low power consumption without increasing the static current, the tail current source of the adaptive biasing generates extra current during the transition time of the output buffer amplifier. A column driver IC incorporating the proposed buffer amplifier was fabricated in a 1.6-µm 18-V CMOS technology, whose evaluation results indicated that the static current was reduced by up to 39.2% when providing an identical settling time. The proposed amplifier also achieved up to 49.1% (90% falling) and 19.9 % (99.9% falling) improvements in terms of settling time for almost the same static current drawn and active area occupied. -
6.117 Lecture 2 (IAP 2020) 1 Agenda
Lecture 2 Intermediate circuit theory, nonlinear components Graphics used with permission from AspenCore (http://electronics-tutorials.ws) 6.117 Lecture 2 (IAP 2020) 1 Agenda 1. Lab 1 review: RC circuits 2. Nonlinear components: diodes, BJTs and MOSFETs 3. Operational amplifiers (op-amps) 4. Audio amplification 5. Lab 2 overview: components and specifications 6.117 Lecture 2 (IAP 2020) 2 Lab 1 review Resistor-capacitor (RC) circuits 6.117 Lecture 2 (IAP 2020) 3 RC charging response • Capacitor voltage Vc grows exponentially close to Vs • Rate of exponential growth defined by resistor value (smaller resistor = faster charging) RC time constant Capacitor voltage 6.117 Lecture 2 (IAP 2020) 4 RC discharging response • Capacitor voltage Vc decays exponentially to 0 • Rate of exponential decay defined by resistor value (smaller resistor = faster discharging) RC time constant Capacitor voltage 6.117 Lecture 2 (IAP 2020) 5 RC transient response 6.117 Lecture 2 (IAP 2020) 6 RC Time constant tables Charging Discharging Percentage of Percentage of Time Constant Time Constant applied voltage applied voltage 0.5 39.3% 0.5 60.7% 0.7 50.3% 0.7 49.7% 1 63.2% 1 36.8% 2 86.5% 2 13.5% 3 95.0% 3 5.0% 4 98.2% 4 1.8% 5 99.3% 5 0.7% 6.117 Lecture 2 (IAP 2020) 7 Filtering • Filter: Circuit whose response depends on the frequency of the input • Reactance: “Effective resistance” of a capacitor, varies inversely with frequency • Can construct a voltage divider using a capacitor as a “resistor” to exploit this property 6.117 Lecture 2 (IAP 2020) 8 Types of filters 1 LPF 푓 = 퐻푧 푐 2휋푅퐶 1 HPF 푓 = 퐻푧 푐 2휋푅퐶 1 푓 = 퐻푧 퐻 2휋푅 퐶 BPF 1 1 1 푓퐿 = 퐻푧 2휋푅2퐶2 6.117 Lecture 2 (IAP 2020) 9 Nonlinear components Diodes, BJTs and MOSFETs 6.117 Lecture 2 (IAP 2020) 10 Linear vs. -
Amplificadores De Sinais Acesso Em: 17 Maio 2018
Amplificadores de sinais https://www.electronics-tutorials.ws/amplifier/amp_1.html Acesso em: 17 Maio 2018 Sumário • 1. Introduction to the Amplifier • 2. Common Emitter Amplifier • 3. Common Source JFET Amplifier • 4. Amplifier Distortion • 5. Class A Amplifier • 6. Class B Amplifier • 7. Crossover Distortion in Amplifiers • 8. Amplifiers Summary • 9. Emitter Resistance • 10. Amplifier Classes • 11. Transistor Biasing • 12. Input Impedance of an Amplifier • 13. Frequency Response • 14. MOSFET Amplifier • 15. Class AB Amplifier Introduction to the Amplifier An amplifier is an electronic device or circuit which is used to increase the magnitude of the signal applied to its input. Amplifier is the generic term used to describe a circuit which increases its input signal, but not all amplifiers are the same as they are classified according to their circuit configurations and methods of operation. In “Electronics”, small signal amplifiers are commonly used devices as they have the ability to amplify a relatively small input signal, for example from a Sensor such as a photo- device, into a much larger output signal to drive a relay, lamp or loudspeaker for example. There are many forms of electronic circuits classed as amplifiers, from Operational Amplifiers and Small Signal Amplifiers up to Large Signal and Power Amplifiers. The classification of an amplifier depends upon the size of the signal, large or small, its physical configuration and how it processes the input signal, that is the relationship between input signal and current flowing