Chem I Unit 5 Reactions Chemical Reaction

Total Page:16

File Type:pdf, Size:1020Kb

Chem I Unit 5 Reactions Chemical Reaction Chem I Unit 5 Reactions Chemical Reaction: a process in which one or more substances are converted into new substances with different physical and chemical properties Reactant: a substance that enters into a chemical reaction Product: A substance produces by a chemical reaction Chemical Reactions occur so that atoms can obtain a full set of valence electrons and become more stable Chemical Equations Chemical Equations: are used to describe what happens in a chemical reaction Identifies the reactants and the products Reactants → Products Types of Chemical Equations Word Equations: give the names of the reactants and products Magnesium + Nitrogen → Magnesium Nitride Formula Equations or Chemical Equations: use chemical symbols and formulas instead of names Coefficients: precede the symbol or formula and indicate the relative number of particles 3 Mg + N2 → Mg3N2 3 atoms of magnesium react with one molecule of nitrogen to yield one particle of magnesium nitride Practice Convert word equations below into formula equations Hint: H O N and the halogens all exist as diatomic molecules H2 = hydrogen O2 = Oxygen N2 = Nitrogen Cl2 = chlorine Br2 = Bromine F2 = Fluorine, etc. sulfur + oxygen → sulfur dioxide carbon dioxide + water → carbonic acid iron + copper (II) sulfate → iron (II) sulfate + copper Practice Convert word equations below into formula equations Hint: H O N and the halogens all exist as diatomic molecules H2 = hydrogen O2 = Oxygen N2 = Nitrogen Cl2 = chlorine Br2 = Bromine F2 = Fluorine, etc. sulfur + oxygen → sulfur dioxide S + O2 → SO2 carbon dioxide + water → carbonic acid CO2 + H2O → H2CO3 iron + copper (II) sulfate → iron (II) sulfate + copper Fe + CuSO4 → FeSO4 + Cu Balanced Chemical Equation: The Law of Conservation of Mass has been observed Matter can neither be gained nor lost through a chemical reaction For mass to remain constant the number of atoms of each element must be the same before and after a chemical reaction (Atoms Before = Atoms After) Example: 3 Mg + N2 → Mg3N2 Element Mg N Atoms Before 3 2 Atoms Afterward 3 2 Balancing Equations Write a formula equation with the correct symbols and formulas Count the number of atoms of each element on each side of the arrow Balance atoms by using coefficients Check work by counting atoms of each element K + Br2 → KBr Before: 1 K and 2 Br After: 1 K and 1 Br 2K + Br2 → 2KBr Before: 2 K and 2 Br After: 2 K and 2 Br Hints for Balancing Equations Check for Diatomic molecules H2 O2 N2 Cl2 Br2 I2 F2 Balance Polyatomic ions (if same poly. Ion on both sides → balance as a chunk) Metals Nonmetals “O” & “H” Recheck your count – it can take several steps! Balancing Example CH4 + O2 → CO2 + H2O Balance C 1C 1C Balance H 4H 2H Add Coefficient CH4 + O2 → CO2 + 2H2O Balance H 4H 4H Balance O 2O 2O + 2O = 4O Add Coefficient CH4 + 2O2 → CO2 + 2H2O Check all atoms C H O Before: 1 4 4 After 1 4 4 Practice: Balance the following Equations Fe + O2 → Fe2O3 C2H5OH + O2 → CO2 + H2O Practice: Balance the following Equations 4Fe + 3O2 → 2Fe2O3 C2H5OH + 3O2 → 2CO2 + 3H2O Writing Complete Chemical Reactions Complete Chemical Reactions: include the physical state of each reactant and product Written after the formula in parentheses: (g) = gas (l) = liquid (s) = solid (aq) = aqueous (dissolved in water) CH4(g) + 2O2(g) → CO2(g) + 2H2O(l) 1 molecule of Methane gas reacts with two molecules of oxygen gas to form 1 molecule carbon dioxide and 2 molecules of water Classifying Chemical Reactions Direct Combination (or synthesis) reactions: 2 or more simple reactants come together to form a single more complex product A + B → AB S + O2 → SO2 CO2 + H2O → H2CO3 Decomposition reactions: a single compound is broken down into two or more smaller compounds or elements AB → A + B 2H2O → 2H2 + O2 CaCO3 → CaO + CO2 Classifying Chemical Reactions Single Replacement Reactions: An uncombined element displaces an element that is part of a compound A + BX → AX + B Mg + CuSO4 → MgSO4 + Cu Double Replacement Reactions: atoms or ions from two different compounds replace each other AX + BY → AY + BX CaCO3 + 2HCl → CaCl2 + H2CO3 AgNO3 + CaCl2 → Ca(NO3)2 + AgCl Classifying Chemical Reactions Combustion reactions: reaction in which something is burned (reacted with oxygen) Many direct combination reactions are also combustion reactions: 4 Fe + 3 O2 → 2 Fe2O3 General form of reaction: CxHyOz + O2 → CO2 + H2O When compounds containing carbon and hydrogen (can also have oxygen) burn the products always include carbon dioxide and water CH4 + O2 → CO2 + 2H2O C2H5OH+ 3O2 →2 CO2 + 3H2O Classifying Chemical Reactions Neutralization reactions: are a special case of double replacement reaction. One of the reactants is an acid (starts with H), one is a base (ends with OH). The products are always a salt and water. All ionic compounds are salts. General form of reaction: AOH + HX → AX + HOH Neutralization reactions occur in water Ca(OH)2 + 2 HCl → CaCl2 + 2 H2O AgOH + HNO3 → AgNO3 + H2O The Unique Bonding of Carbon Carbon’s half filled valence level and relatively small size give it unique bonding properties It is one of the few elements that forms 4 bonds and the only one that does so in such a large variety of combinations: Carbon bonds with itself to form long chains or ring structures These bonds are strong, short and covalent so the structures are very stable Each Carbon in the chain or ring can form 4 single bonds, 2 double bonds, 1 double & 2 single bonds, 1 single and 1 triple bond. Thus a HUGE variety of compounds containing carbon exist These compounds provide the framework for most of the molecules that living organisms make or use. This is why in general carbon containing compounds are called Organic compounds. Hydrocarbons: are compounds made of hydrogen and carbon Predicting Reaction Products In a single replacement reaction metals replace metals or hydrogen and nonmetals replace nonmetals. Example: Cl2 + 2KI → 2KCl + I2 The activity series can be used to predict whether one metal will replace another An activity series of metals is a listing that ranks metals according to their relative reactivity A metal can replace only those metals below it on the list Predicting Products Double replacement reactions are likely to proceed if at least one of the products is a molecular compound, a precipitate, or a gas. Solubility rules can be used to help determine whether a product will be a precipitate Precipitate: solid formed when two aqueous substances react Solubility Rules: for solubility in water Compounds that contain these ions are generally soluble Alkali metals and ammonium ions - Acetate ion (C2H3O2 ) - Nitrate ion (NO3 ) Halide ions (X), except AgX, Hg2X2 and PbX2 Sulfate ion except SrSO4, BaSO4, and PbSO4 Compounds that contain these ions are generally insoluble -2 Carbonate ion (CO3 ) except with rule 1 ions -2 Chromate ion (CrO4 ) except with rule 1 ions -2 Phosphate ion (PO4 ) except with rule 1 ions Sulfide ion (S2-) (CaS, SrS, BaS and rule 1 exceptions are soluble) -2 Hydroxide ion (OH ) (Ca(OH)2, Sr(OH)2, and Ba(OH)2 and rule 1 exceptions are soluble Reaction Rate Many reactions are reversible – once there are enough products, the products can change back into reactants Chemical Equilibrium is the state in which the concentration of the reactants and products remain constant with time because the rate at which they are formed in each reaction equals the rate at which they are consumed in the opposite reaction (forward rate = reverse rate) Le Chatelier’s Principle: Conditions affect equilibrium. Thus different conditions will affect the relative amount of products that are formed. Conditions that affect Rate Concentration: the amount of a substance Adding a substance to a system at equilibrium causes the system to consume that substance Add a reactant – increase forward rate – more products are produced Add a product – increase reverse rate – more reactants are produced Pressure: affects some gaseous system Increase pressure – the reaction will shift in the direction that produces fewer molecules of gas Example: In the reaction below fewer gas molecules are produced by the forward reaction. An increase in pressure will favor production of product 2 NO2 (g) N2O4 (g) Conditions that Affect Rate Temperature: to determine the affect of temperature you must know whether the reaction is endothermic or exothermic: Exothermic reactions – give off heat Endothermic reactions – absorb heat If the forward reaction is exothermic the reverses is endothermic and vice versa If the reaction is exothermic: adding heat will drive the reverse reaction – producing more reactants. If the reaction is endothermic, adding heat will drive the forward reaction – producing more products .
Recommended publications
  • Magnesium Nitride (Mg3n2) Powder
    Magnesium Nitride (Mg3N2) Powder US Research Nanomaterials, Inc. www.us-nano.com SAFTY DATA SHEET Revised Date 12/12/2015 1. PRODUCT AND COMPANY IDENTIFICATION 1.1 Product identifiers Product name: Magnesium Nitride (Mg3N2) Powder Product Number : US1115M Magnesium Nitride (Mg3N2) CAS#: 12057-71-5 1.2 Relevant identified uses of the substance or mixture and uses advised against Identified uses : Research 1.3 Details of the supplier of the safety data sheet Company: US Research Nanomaterials, Inc. 3302 Twig Leaf Lane Houston, TX 77084 USA Telephone: +1 832-460-3661 Fax: +1 281-492-8628 1.4 Emergency telephone number Emergency Phone # : (832) 359-7887 2. HAZARDS IDENTIFICATION 2.1 Classification of the substance or mixture This chemical is considered hazardous by the 2012 OSHA Hazard Communication Standard (29 CFR 1910.1200) 2.2 GHS Label elements, including precautionary statements Pictogram Signal word Warning Hazard statement(s) H260: In contact with water releases flammable gas. H302: Harmful if swallowed. H312: Harmful in contact with skin. H315: Causes skin irritation. H319: Causes serious eye irritation. H332: Harmful if inhaled. H335: May cause respiratory irritation. Precautionary statement(s) P223 Keep away from any possible contact with water, because of violent reaction and possible flash fire. P231+P232 Handle under inert gas. Protect from moisture. P261 Avoid breathing dust/fume/gas/mist/vapors/spray. P280 Wear protective gloves/protective clothing/eye protection/face protection. P301+P312 IF SWALLOWED: Call a POISON CENTER or doctor/physician if you feel unwell. P302+P352 IF ON SKIN: Wash with plenty of soap and water. P304+P340 IF INHALED: Remove victim to fresh air and keep at rest in a position comfortable for breathing.
    [Show full text]
  • Investigations of Mixed-Anion Analogs of Manganite Perovskites and Bimetallic
    Investigations of Mixed-Anion Analogs of Manganite Perovskites and Bimetallic Group II Nitride Fluorides By Oscar Kipruto Keino Submitted in Partial Fulfillment of the Requirements For the Degree of Master of Science in the Chemistry Program YOUNGSTOWN STATE UNIVERSITY December, 2017 Investigations of Mixed-Anion Analogs of Manganite Perovskites and Bimetallic Group II Nitride Fluorides By Oscar Kipruto Keino I hereby release this thesis to the public. I understand that this thesis will be made available from the Ohio LINK ETD Center and the Maag Library Circulation Desk for public access. I also authorize the University or other individuals to make copies of this thesis as needed for scholarly research. Signature: ________________________________________________________________ Oscar Kipruto Keino, Student Date Approvals: ________________________________________________________________ Dr. Timothy R. Wagner, Thesis Advisor Date ________________________________________________________________ Dr. Sherri Lovelace-Cameron, Committee Member Date ________________________________________________________________ Dr. Allen Hunter, Committee Member Date ________________________________________________________________ Dr. Salvatore A. Sanders, Date Dean, College of Graduate Studies iii ABSTRACT Lanthanum manganites are perovskite related materials known in particular for their colossal magnetoresistance (CM) properties. Manganite compositions showing CM behavior are mixed cation compounds such as (CaxLa1-x) MnO3, which contain Mn ions in mixed
    [Show full text]
  • Chemical Names and CAS Numbers Final
    Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number C3H8O 1‐propanol C4H7BrO2 2‐bromobutyric acid 80‐58‐0 GeH3COOH 2‐germaacetic acid C4H10 2‐methylpropane 75‐28‐5 C3H8O 2‐propanol 67‐63‐0 C6H10O3 4‐acetylbutyric acid 448671 C4H7BrO2 4‐bromobutyric acid 2623‐87‐2 CH3CHO acetaldehyde CH3CONH2 acetamide C8H9NO2 acetaminophen 103‐90‐2 − C2H3O2 acetate ion − CH3COO acetate ion C2H4O2 acetic acid 64‐19‐7 CH3COOH acetic acid (CH3)2CO acetone CH3COCl acetyl chloride C2H2 acetylene 74‐86‐2 HCCH acetylene C9H8O4 acetylsalicylic acid 50‐78‐2 H2C(CH)CN acrylonitrile C3H7NO2 Ala C3H7NO2 alanine 56‐41‐7 NaAlSi3O3 albite AlSb aluminium antimonide 25152‐52‐7 AlAs aluminium arsenide 22831‐42‐1 AlBO2 aluminium borate 61279‐70‐7 AlBO aluminium boron oxide 12041‐48‐4 AlBr3 aluminium bromide 7727‐15‐3 AlBr3•6H2O aluminium bromide hexahydrate 2149397 AlCl4Cs aluminium caesium tetrachloride 17992‐03‐9 AlCl3 aluminium chloride (anhydrous) 7446‐70‐0 AlCl3•6H2O aluminium chloride hexahydrate 7784‐13‐6 AlClO aluminium chloride oxide 13596‐11‐7 AlB2 aluminium diboride 12041‐50‐8 AlF2 aluminium difluoride 13569‐23‐8 AlF2O aluminium difluoride oxide 38344‐66‐0 AlB12 aluminium dodecaboride 12041‐54‐2 Al2F6 aluminium fluoride 17949‐86‐9 AlF3 aluminium fluoride 7784‐18‐1 Al(CHO2)3 aluminium formate 7360‐53‐4 1 of 75 Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number Al(OH)3 aluminium hydroxide 21645‐51‐2 Al2I6 aluminium iodide 18898‐35‐6 AlI3 aluminium iodide 7784‐23‐8 AlBr aluminium monobromide 22359‐97‐3 AlCl aluminium monochloride
    [Show full text]
  • Multi-Stage Synthesis of Magnesium Nitride Using an Atmospheric-Pressure Dielectric Barrier Discharge
    Int. J. Plasma Environ. Sci. Technol. 15 (2021) e02002 (6pp) Regular Paper DOI: 10.34343/ijpest.2021.15.e02002 Multi-stage synthesis of magnesium nitride using an atmospheric-pressure dielectric barrier discharge Shungo Zen*, Yingwen Huang, Nozomi Takeuchi Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-S3-3, Ookayama, Meguro-ku, Tokyo, Japan * Corresponding author: [email protected] (Shungo Zen) Received: 18 March 2021 Revised: 8 May 2021 Accepted: 20 May 2021 Published online: 22 May 2021 Abstract A multi-stage dielectric barrier discharge (DBD) was used to elucidate the reaction pathway for synthesizing Mg3N2 from MgO, nitrogen, and hydrogen using atmospheric pressure plasma. Recently, ammonia has been considered as a promising carbon-free material for hydrogen storage and carrier owing to its high hydrogen density. However, the extensive use of ammonia as an energy carrier has problems with respect to transportation and storage because of its toxicity, odor, and combustibility. Therefore, we consider that Mg3N2 can solve these problems and focus on Mg3N2 synthesis by nitridation of MgO using a DBD in a N2 and H2 atmosphere instead of directly synthesizing ammonia. By investigating the Mg3N2 synthesis pathway using a multi-stage atmospheric pressure plasma, it is considered that H atoms and NH radicals reduce MgO and promote nitriding. Keywords: Ammonia carrier, dielectric barrier discharge, Mg3N2 synthesis, non-thermal plasma. 1. Introduction Owing to significant use of fossil fuel energy, environmental problems such as the greenhouse effect, acid rain, and smog are becoming severe [1]. Recognizing these issues has led to increased attention to renewable energy sources [2].
    [Show full text]
  • Tunable Light-Emission Through the Range 1.8–3.2 Ev and P-Type Conductivity at Room Temperature for Nitride Semiconductors, Ca(Mg1−Xznx)2N2 (X = 0 – 1)”
    Tunable light-emission through the range 1.8–3.2 eV and p-type conductivity at room temperature for nitride semiconductors, Ca(Mg1−xZnx)2N2 (x = 0 – 1) Masatake Tsuji,1 Hidenori Hiramatsu,1,2,a and Hideo Hosono1,2 1: Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Mailbox R3-3, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan 2: Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-1, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan a) Electronic mail: [email protected] 1 Abstract The ternary nitride CaZn2N2, composed only of earth-abundant elements, is a novel semiconductor with a band gap of ~1.8 eV. First-principles calculations predict that continuous Mg substitution at the Zn site will change the optical band gap in a wide range from ~3.3 eV to ~1.9 eV for Ca(Mg1−xZnx)2N2 (x = 0–1). In this study, we demonstrate that a solid-state reaction at ambient pressure and a high-pressure synthesis at 5 GPa produce x = 0 and 0.12, and 0.12 < x 1 polycrystalline samples, respectively. It is experimentally confirmed that the optical band gap can be continuously tuned from ~3.2 eV to ~1.8 eV, a range very close to that predicted by theory. Band-to-band photoluminescence is observed at room temperature in the ultraviolet–red region depending on x. A 2% Na doping at the Ca site of CaZn2N2 converts its highly resistive state to a p-type conducting state.
    [Show full text]
  • Formation, Stability and Presence of Magnesium Nitride in Magnesium Recycling Processes
    ZOBODAT - www.zobodat.at Zoologisch-Botanische Datenbank/Zoological-Botanical Database Digitale Literatur/Digital Literature Zeitschrift/Journal: Berichte des Institutes für Geologie und Paläontologie der Karl- Franzens-Universität Graz Jahr/Year: 2004 Band/Volume: 9 Autor(en)/Author(s): Bauer Christoph, Mogessie Aberra, Galovsky Ulrike Artikel/Article: Formation, stability and presence of magnesium nitride in magnesium recycling processes. 70-71 ©Institut f. Erdwissensch., Geol. u. Paläont., Karl-Franzens-Universität Graz; download www.biologiezentrum.at Ber. Inst. Erdwiss. K.-F.-Univ. Graz ISSN 1608-8166 Band 9 Graz 2004 FORMATION, STABILITY AND PRESENCE OF MAGNESIUM NITRIDE IN MAGNESIUM RECYCLING PROCESSES Christoph BAUER1, Aberra MOGESSIE1 & Ulrike GALOVSKY2 1 Karl-Franzens Universität Graz 2 Leichtmetall Kompetenzzentrum Ranshofen In this study an attempt has been made to find methods of detecting magnesium nitride and to investigate in which part of the magnesium recycling process it is concentrated. As a light metal, magnesium has several interesting properties which enable it to be used in the automotive industry. Among the most important properties are its density and strength. Molten magnesium is unstable when exposed to air, and the usage of cover gases like SO2 or SF6 is necessary. For purifying the alloys, nitrogen is blown through the melt, so that impurities adhere to the bubbles’ surface and form compounds, which can be easily separated by gravitation. To produce high quality magnesium alloys, it is necessary to investigate the nitrogen compounds and their disposition. In moisture bearing environment, exothermic reactions take place when magnesium nitride reacts to ammonium and brucite and also when aluminium nitride reacts to ammonium and gibbsite.
    [Show full text]
  • Mg3n2 Nanocrystallites Formation During the Gan:Mg Layers Growth by the NH3-MBE Technique
    Journal of Crystal Growth 554 (2021) 125963 Contents lists available at ScienceDirect Journal of Crystal Growth journal homepage: www.elsevier.com/locate/jcrysgro Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique T.V. Malin a, V.G. Mansurov a, Yu.G. Galitsyn a, D.S. Milakhin a, D.Yu. Protasov a,c, B.Ya. Ber b, D. Yu. Kazantsev b, V.V. Ratnikov b, M.P. Shcheglov b, A.N. Smirnov b, V.Yu. Davydov b, K. S. Zhuravlev a,d,* a Physics and Engineering of Semiconductor Structures Department, Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, Russia b Ioffe Institute, St. Petersburg 194021, Russia c Novosibirsk State Technical University, Novosibirsk 630087, Russia d Novosibirsk State University, Novosibirsk 630090, Russia ARTICLE INFO ABSTRACT Communicated by H. Asahi The work is devoted to the study of p-GaN: Mg epitaxial layers grown by the ammonia MBE technique. We find that the conductivity of GaN layers doped with Mg does not change with a postgrowth heat treatment. Formation Keywords: of Mg3N2 nanocrystallites on GaN surface during epitaxial growth of the GaN layer with a high magnesium A1. Mg3N2-crystallites doping level was detected by the RHEED technique for the first time. It was shown that the Mg3N2 nano­ A3. Ammonia-MBE crystallites formation competes with the acceptor states formation process. It has been proposed that the growth B1. p-GaN temperature can be applied as an additional “tuning” mechanism which affects the Mg incorporation into the B1. GaN:Mg A1. RHEED growing GaN:Mg layers.
    [Show full text]
  • United States Patent [191 [11] 4,409,193 Sato Et Al
    United States Patent [191 [11] 4,409,193 Sato et al. [45] Oct. 11, 1983 [54] PROCESS FOR PREPARING CUBIC BORON shi Endo, Osamu' Fukunga, Minoru Iwata (1979) NITRIDE 1676-1680. [75] Inventors: Tadao Sato; Tadashi Endo; Osamu Journal of Material Science 16 (1981) 2227-2232, “The Fukunaga, all of Sakura; Minoru Synthesis of cBN Using Ca3B2N4”, Tadashi Endo, Iwata, Matsudo, all of Japan Osamu Fukunga, Minoru Iwata. [73] Assignee: National Institute for Researches in Primary Examiner-Brian E. Hearn Inorganic Materials, Ibaraki, Japan Assistant Examiner—Jackson Leeds Attorney, Agent, or Firm—Oblon, Fisher, Spivak, [21] Appl. No.: 354,354 McClelland & Maier [22] Filed: Mar. 3, 1982 [57] ABSTRACT [30] Foreign Application Priority Data A process for preparing cubic boron nitride comprises Mar. 6, 1981 [JP] Japan ................................ .. 56-32139 heating hexagonal boron nitride and magnesium boron Mar. 20, 1981 [JP] Japan ................................ .. 56-40563 nitride at a temperature of at least 1350“ C. under a [51] Int. Cl.3 ............................................ .. C01B 21/06 pressure at which the cubic boron nitride is thermody namically stable, whereby the cubic boron having high [52] U.S. C]. .. 423/290; 423/279 [58] Field of Search .............................. .. 423/290, 276 strength and high purity can readily be obtainable. Also disclosed is a process for the preparation of magnesium [56] References Cited boron useful as a starting material for the above process. FOREIGN PATENT DOCUMENTS This process comprises mixing hexagonal boron nitride and magnesium nitride or metal magnesium in a molar 506438 6/1971 Switzerland ...................... .. 423/290 ratio of hexagonal boron nitride/magnesium being at OTHER PUBLICATIONS least 0.6, and heating the mixture thus obtained, at a DeVries, R.
    [Show full text]
  • Nitrogen 1 Nitrogen
    Nitrogen 1 Nitrogen Nitrogen Appearance colorless gas, liquid or solid Spectral lines of Nitrogen General properties Name, symbol, number nitrogen, N, 7 Pronunciation /ˈnaɪtrɵdʒɪn/ nye-tro-jin Element category nonmetal Group, period, block 15, 2, p −1 Standard atomic weight 14.0067(2) g·mol Electron configuration 1s2 2s2 2p3 Electrons per shell 2, 5 (Image) Physical properties Phase gas Density (0 °C, 101.325 kPa) 1.251 g/L Melting point 63.15 K,-210.00 °C,-346.00 °F Boiling point 77.36 K,-195.79 °C,-320.33 °F Triple point 63.1526 K (-210°C), 12.53 kPa Critical point 126.19 K, 3.3978 MPa Heat of fusion (N ) 0.72 kJ·mol−1 2 Heat of vaporization (N ) 5.56 kJ·mol−1 2 Specific heat capacity (25 °C) (N ) 2 29.124 J·mol−1·K−1 Vapor pressure P/Pa 1 10 100 1 k 10 k 100 k at T/K 37 41 46 53 62 77 Atomic properties Nitrogen 2 Oxidation states 5, 4, 3, 2, 1, -1, -2, -3 (strongly acidic oxide) Electronegativity 3.04 (Pauling scale) Ionization energies 1st: 1402.3 kJ·mol−1 (more) 2nd: 2856 kJ·mol−1 3rd: 4578.1 kJ·mol−1 Covalent radius 71±1 pm Van der Waals radius 155 pm Miscellanea Crystal structure hexagonal Magnetic ordering diamagnetic Thermal conductivity (300 K) 25.83 × 10−3 W·m−1·K−1 Speed of sound (gas, 27 °C) 353 m/s CAS registry number 7727-37-9 Most stable isotopes iso NA half-life DM DE (MeV) DP 13N syn 9.965 min ε 2.220 13C 14N 99.634% 14N is stable with 7 neutron 15N 0.366% 15N is stable with 8 neutron Nitrogen ( /ˈnaɪtrɵdʒɪn/ ny-trə-jin) is a chemical element that has the symbol N, atomic number of 7 and atomic mass 14.00674 u.
    [Show full text]
  • Thermodynamic and Kinetic Analysis of Nitrogenization in Desulfurization of Hot Metal by Magnesium Injection
    ISIJ International, Vol. 49 (2009), No. 6, pp. 771–776 Review Thermodynamic and Kinetic Analysis of Nitrogenization in Desulfurization of Hot Metal by Magnesium Injection Haiping SUN,1,2) Yung-Chang LIU1) and Muh-Jung LU1) 1) Steel & Aluminum Research & Development Department, China Steel Corporation, Kaohsiung 81233, Taiwan. E-mail: [email protected] 2) School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia. E-mail: [email protected] (Received on November 25, 2008; accepted on February 18, 2009) Literature study and thermodynamic/kinetic analysis have been carried out on the effect of carrier gas on hot metal desulfurization by magnesium injection. The literature study shows that the magnesium efficiency of the process could be deteriorated by using nitrogen as carrier gas, but the difference in magnesium effi- ciency for the process using argon and that using nitrogen was not clearly identified. Thermodynamic/ki- netic analysis shows that when nitrogen is used as carrier gas for introducing magnesium into hot metal, the formation of magnesium nitride is possible in the regions close to the lance tip. The nitride formed at lance tip may cause lance clogging. Magnesium nitride is unstable in hot metal or in gas at high tempera- tures; and after leaving lance tip regions, magnesium nitride will undergo decomposition. Magnesium loss in process off gas will be increased by the decomposition of magnesium nitride that occurs too closely to bath surface or by any un-decomposed magnesium nitride at bath surface. The magnesium loss by nitroge- nization and the clogging problem could be minimized by optimizing injection conditions.
    [Show full text]
  • Chemical Safety and Waste Management Manual
    Chemical Safety and Waste Management Manual University of Alabama at Birmingham Department of Occupational Health & Safety Chemical Safety Division 2002 EDITION 1. INTRODUCTION In a comparatively short time, the University of Alabama at Birmingham has gained significant recognition as a center of excellence for teaching, medical services and research programs. This is a highly commendable achievement and one that could not have been realized without the continued support and dedication of faculty, staff members, and employees. Similar unfailing cooperation and support are necessary for the institution to be equally successful in its development of a comprehensive occupational health and safety program for the protection of University personnel, students, and the surrounding community. An important part of this program is concerned with the safe and prudent handling of chemicals and their proper legal disposal as regulated by the Environmental Protection Agency (EPA) and the Alabama Department of Environmental Management (ADEM). Almost every laboratory and many allied and support personnel at UAB use chemicals in their daily activities. It is the purpose of this manual to describe the operation of the Chemical Safety Program and to provide guidance in establishing safe work practices for the use of chemicals. This program applies to all work operations at this University where employees may be exposed to hazardous substances under normal working conditions or during an emergency. The Chemical Safety and Waste Management Manual combines both the Chemical Hygiene Plan for laboratories and the Hazard Communication Program for maintenance, environmental services, and other support personnel. The Occupational Safety and Health Administration (OSHA) Hazard Communication Standard may be found at : http://www.osha- slc.gov/OshStd_data/1910_1200.html.
    [Show full text]
  • Epitaxial Growth and Optical Properties of Mg3n2, Zn3n2, and Alloys by Peng Wu B.Sc., Xinjiang Normal University, 2010 M.Sc., Xi
    Epitaxial Growth and Optical Properties of Mg3N2, Zn3N2, and alloys by Peng Wu B.Sc., Xinjiang Normal University, 2010 M.Sc., Xinjiang Normal University/University of Science and Technology of China (joint), 2013 A Dissertation Submitted in Partial Fulfillment of the Requirements for the Degree of DOCTOR OF PHILOSOPHY in the Department of Electrical and Computer Engineering ã Peng Wu, 2019 University of Victoria All rights reserved. This dissertation may not be reproduced in whole or in part, by photocopy or other means, without the permission of the author. ii Supervisory Committee Epitaxial Growth and Physics Properties of Mg3N2, Zn3N2, and alloys by Peng Wu B.Sc., Xinjiang Normal University, 2010 M.Sc., Xinjiang Normal University/University of Science and Technology of China (joint), 2013 Supervisory Committee Thomas Tiedje, (Department of Electrical and Computer Engineering) Supervisor Reuven Gordon, (Department of Electrical and Computer Engineering) Departmental Member Frank Van Veggel, (Department of Chemistry) Outside Member iii Abstract Supervisory Committee Thomas Tiedje, (Department of Electrical and Computer Engineering) Supervisor Reuven Gordon, (Department of Electrical and Computer Engineering) Departmental Member Frank Van Veggel, (Department of Chemistry) Outside Member Zinc nitride and magnesium nitride are examples of the relatively unexplored II3V2 group of semiconductor materials. These materials have potential applications in the electronics industry due to their excellent optical and electrical properties. This study mainly focuses on the growth and characterization of the new semiconductor materials: zinc nitride, magnesium nitride, and their alloys. The (100) oriented zinc nitride thin films were grown on both (110) sapphire substrates and (100) MgO substrates by plasma-assisted molecular beam epitaxy (MBE).
    [Show full text]