BIBLIOGRAPHY on the HIGH TEMPERATURE CHEMISTRY and PHYSICS of MATERIALS
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The Science of String Instruments
The Science of String Instruments Thomas D. Rossing Editor The Science of String Instruments Editor Thomas D. Rossing Stanford University Center for Computer Research in Music and Acoustics (CCRMA) Stanford, CA 94302-8180, USA [email protected] ISBN 978-1-4419-7109-8 e-ISBN 978-1-4419-7110-4 DOI 10.1007/978-1-4419-7110-4 Springer New York Dordrecht Heidelberg London # Springer Science+Business Media, LLC 2010 All rights reserved. This work may not be translated or copied in whole or in part without the written permission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York, NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights. Printed on acid-free paper Springer is part of Springer ScienceþBusiness Media (www.springer.com) Contents 1 Introduction............................................................... 1 Thomas D. Rossing 2 Plucked Strings ........................................................... 11 Thomas D. Rossing 3 Guitars and Lutes ........................................................ 19 Thomas D. Rossing and Graham Caldersmith 4 Portuguese Guitar ........................................................ 47 Octavio Inacio 5 Banjo ...................................................................... 59 James Rae 6 Mandolin Family Instruments........................................... 77 David J. Cohen and Thomas D. Rossing 7 Psalteries and Zithers .................................................... 99 Andres Peekna and Thomas D. -
Magnesium Nitride (Mg3n2) Powder
Magnesium Nitride (Mg3N2) Powder US Research Nanomaterials, Inc. www.us-nano.com SAFTY DATA SHEET Revised Date 12/12/2015 1. PRODUCT AND COMPANY IDENTIFICATION 1.1 Product identifiers Product name: Magnesium Nitride (Mg3N2) Powder Product Number : US1115M Magnesium Nitride (Mg3N2) CAS#: 12057-71-5 1.2 Relevant identified uses of the substance or mixture and uses advised against Identified uses : Research 1.3 Details of the supplier of the safety data sheet Company: US Research Nanomaterials, Inc. 3302 Twig Leaf Lane Houston, TX 77084 USA Telephone: +1 832-460-3661 Fax: +1 281-492-8628 1.4 Emergency telephone number Emergency Phone # : (832) 359-7887 2. HAZARDS IDENTIFICATION 2.1 Classification of the substance or mixture This chemical is considered hazardous by the 2012 OSHA Hazard Communication Standard (29 CFR 1910.1200) 2.2 GHS Label elements, including precautionary statements Pictogram Signal word Warning Hazard statement(s) H260: In contact with water releases flammable gas. H302: Harmful if swallowed. H312: Harmful in contact with skin. H315: Causes skin irritation. H319: Causes serious eye irritation. H332: Harmful if inhaled. H335: May cause respiratory irritation. Precautionary statement(s) P223 Keep away from any possible contact with water, because of violent reaction and possible flash fire. P231+P232 Handle under inert gas. Protect from moisture. P261 Avoid breathing dust/fume/gas/mist/vapors/spray. P280 Wear protective gloves/protective clothing/eye protection/face protection. P301+P312 IF SWALLOWED: Call a POISON CENTER or doctor/physician if you feel unwell. P302+P352 IF ON SKIN: Wash with plenty of soap and water. P304+P340 IF INHALED: Remove victim to fresh air and keep at rest in a position comfortable for breathing. -
Investigations of Mixed-Anion Analogs of Manganite Perovskites and Bimetallic
Investigations of Mixed-Anion Analogs of Manganite Perovskites and Bimetallic Group II Nitride Fluorides By Oscar Kipruto Keino Submitted in Partial Fulfillment of the Requirements For the Degree of Master of Science in the Chemistry Program YOUNGSTOWN STATE UNIVERSITY December, 2017 Investigations of Mixed-Anion Analogs of Manganite Perovskites and Bimetallic Group II Nitride Fluorides By Oscar Kipruto Keino I hereby release this thesis to the public. I understand that this thesis will be made available from the Ohio LINK ETD Center and the Maag Library Circulation Desk for public access. I also authorize the University or other individuals to make copies of this thesis as needed for scholarly research. Signature: ________________________________________________________________ Oscar Kipruto Keino, Student Date Approvals: ________________________________________________________________ Dr. Timothy R. Wagner, Thesis Advisor Date ________________________________________________________________ Dr. Sherri Lovelace-Cameron, Committee Member Date ________________________________________________________________ Dr. Allen Hunter, Committee Member Date ________________________________________________________________ Dr. Salvatore A. Sanders, Date Dean, College of Graduate Studies iii ABSTRACT Lanthanum manganites are perovskite related materials known in particular for their colossal magnetoresistance (CM) properties. Manganite compositions showing CM behavior are mixed cation compounds such as (CaxLa1-x) MnO3, which contain Mn ions in mixed -
P020190719572604117959.Pdf
Springer Series in advanced microelectronics 27 Springer Series in advanced microelectronics Series Editors: K. Itoh T. Lee T. Sakurai W.M.C. Sansen D. Schmitt-Landsiedel The Springer Series in Advanced Microelectronics provides systematic information on all the topics relevant for the design, processing, and manufacturing of microelectronic devices. The books, each prepared by leading researchers or engineers in their fields, cover the basic and advanced aspects of topics such as wafer processing, materials, device design, device technologies, circuit design, VLSI implementation, and subsys- tem technology. The series forms a bridge between physics and engineering and the volumes will appeal to practicing engineers as well as research scientists. 18 Microcontrollers in Practice By I. Susnea and M. Mitescu 19 Gettering Defects in Semiconductors By V.A. Perevoschikov and V.D. Skoupov 20 Low Power VCO Design in CMOS By M. Tiebout 21 Continuous-Time Sigma-Delta A/D Conversion Fundamentals, Performance Limits and Robust Implementations By M. Ortmanns and F. Gerfers 22 Detection and Signal Processing Technical Realization By W.J. Witteman 23 Highly Sensitive Optical Receivers By K. Schneider and H.K. Zimmermann 24 Bonding in Microsystem Technology By J.A. Dziuban 25 Power Management of Digital Circuits in Deep Sub-Micron CMOS Technologies By S. Henzler 26 High-Dynamic-Range (HDR) Vision Microelectronics, Image Processing, Computer Graphics Editor: B. Hoefflinger 27 Advanced Gate Stacks for High-Mobility Semiconductors Editors: A. Dimoulas, E. Gusev, P.C. McIntyre, and M. Heyns Volumes 1–17 are listed at the end of the book. A. Dimoulas E. Gusev P.C. McIntyre M. -
Reactive Sputtering of Complex Multi-Component Nitride Thin Films
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology 1852 Reactive Sputtering of Complex Multi-component Nitride Thin Films KRISTINA VON FIEANDT ACTA UNIVERSITATIS UPSALIENSIS ISSN 1651-6214 ISBN 978-91-513-0744-2 UPPSALA urn:nbn:se:uu:diva-392704 2019 Dissertation presented at Uppsala University to be publicly examined in Polhemssalen, Ångströmslaboratoriet, Lägerhyddsvägen 1, Uppsala, Friday, 25 October 2019 at 09:15 for the degree of Doctor of Philosophy. The examination will be conducted in English. Faculty examiner: Professor Jean-Francois Pierson (University of Lorraine). Abstract von Fieandt, K. 2019. Reactive Sputtering of Complex Multi-component Nitride Thin Films. Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology 1852. 71 pp. Uppsala: Acta Universitatis Upsaliensis. ISBN 978-91-513-0744-2. The ever-increasing demand on improvement of protective nitride thin films has led to an expansion of the research field into multi-element based materials. The work in this thesis has focused on exploring new complex, multi-component nitride thin films based on three different material systems: Al-Ge-N, Hf-Nb-Ti-V-Zr-N and Al-Cr-Nb-Y-Zr-N. All films were synthesised by reactive dc magnetron sputtering and characterised with regard to structure and material properties, in particular the mechanical, optical and corrosion properties. The Al-Ge-O-N coatings exhibited amorphisation of the structure upon oxygen addition, via the formation of a crystalline (Al1-xGex)(N1-yOy) solid solution phase for low O contents. The mechanical properties were improved, and hardness values up to 29 GPa were achieved for low O and Ge concentrations, most likely due to nanocomposite hardening. -
Chemical Names and CAS Numbers Final
Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number C3H8O 1‐propanol C4H7BrO2 2‐bromobutyric acid 80‐58‐0 GeH3COOH 2‐germaacetic acid C4H10 2‐methylpropane 75‐28‐5 C3H8O 2‐propanol 67‐63‐0 C6H10O3 4‐acetylbutyric acid 448671 C4H7BrO2 4‐bromobutyric acid 2623‐87‐2 CH3CHO acetaldehyde CH3CONH2 acetamide C8H9NO2 acetaminophen 103‐90‐2 − C2H3O2 acetate ion − CH3COO acetate ion C2H4O2 acetic acid 64‐19‐7 CH3COOH acetic acid (CH3)2CO acetone CH3COCl acetyl chloride C2H2 acetylene 74‐86‐2 HCCH acetylene C9H8O4 acetylsalicylic acid 50‐78‐2 H2C(CH)CN acrylonitrile C3H7NO2 Ala C3H7NO2 alanine 56‐41‐7 NaAlSi3O3 albite AlSb aluminium antimonide 25152‐52‐7 AlAs aluminium arsenide 22831‐42‐1 AlBO2 aluminium borate 61279‐70‐7 AlBO aluminium boron oxide 12041‐48‐4 AlBr3 aluminium bromide 7727‐15‐3 AlBr3•6H2O aluminium bromide hexahydrate 2149397 AlCl4Cs aluminium caesium tetrachloride 17992‐03‐9 AlCl3 aluminium chloride (anhydrous) 7446‐70‐0 AlCl3•6H2O aluminium chloride hexahydrate 7784‐13‐6 AlClO aluminium chloride oxide 13596‐11‐7 AlB2 aluminium diboride 12041‐50‐8 AlF2 aluminium difluoride 13569‐23‐8 AlF2O aluminium difluoride oxide 38344‐66‐0 AlB12 aluminium dodecaboride 12041‐54‐2 Al2F6 aluminium fluoride 17949‐86‐9 AlF3 aluminium fluoride 7784‐18‐1 Al(CHO2)3 aluminium formate 7360‐53‐4 1 of 75 Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number Al(OH)3 aluminium hydroxide 21645‐51‐2 Al2I6 aluminium iodide 18898‐35‐6 AlI3 aluminium iodide 7784‐23‐8 AlBr aluminium monobromide 22359‐97‐3 AlCl aluminium monochloride -
Ternary Nitride Materials: Fundamentals and Emerging Device Applications Arxiv:2010.08058V1 [Cond-Mat.Mtrl-Sci] 15 Oct 2020
Ternary Nitride Materials: Fundamentals and Emerging Device Applications Ann L. Greenaway,1 Celeste L. Melamed,2;1 M. Brooks Tellekamp,1 Rachel Woods-Robinson,3;4;1 Eric S. Toberer,2 James R. Neilson5 and Adele C. Tamboli1* 1Materials and Chemistry Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado, United States, 80401 email: [email protected] 2Department of Physics, Colorado School of Mines, Golden, Colorado, United States, 80401 3Applied Science and Technology Graduate Group, University of California at Berkeley, Berkeley, California, United States, 97402 4Energy Technologies Area, Lawrence Berkeley National Laboratory, Berkeley, California, United States, 94720 5Department of Chemistry, Colorado State University, Fort Collins, Colorado, United States, 80523 Keywords ternary nitride, structural chemistry, metastability, nitride synthesis, optoelectronics, battery Abstract Interest in inorganic ternary nitride materials has grown rapidly over the past few decades, as their diversity of chemistries and structures make them appealing for a variety of applications. Due to synthetic challenges posed by the stability of N2, the number of predicted ni- tride compounds dwarfs those that have been synthesized, offering a breadth of opportunity for exploration. This review summarizes the fundamental properties and structural chemistry of ternary nitrides, leveraging metastability and the impact of nitrogen chemical potential. A discussion of prevalent defects, both detrimental and beneficial, is followed by a survey of synthesis techniques and their interplay with arXiv:2010.08058v1 [cond-mat.mtrl-sci] 15 Oct 2020 metastability. Throughout the review, we highlight applications (such as solid-state lighting, electrochemical energy storage, and electronic devices) in which ternary nitrides show particular promise. 1 Contents 1. -
Characterization of Iii-Nitride Thin Films
ABSTRACT PARK, JI-SOO. Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes. (Under the direction of Professor Robert F. Davis) AlGaN-based thin film heterostructures have been grown and fabricated into ultraviolet light emitting diodes with and without p-type and/or n-type AlGaN carrier- blocking layers at the top and the bottom of the quantum wells, respectively, and having the principal emission at 353 nm. The highest values of this peak intensity and light output power were measured in the devices containing p-type carrier-blocking layers. Growth of an n-type carrier-blocking layer had an adverse effect on these device characteristics. A broad peak centered at ~540nm exhibited yellow luminescence and was present in the spectra acquired from all the devices. This peak is attributed to absorption of the ultraviolet emission by and re-emission from the p-GaN and/or to the luminescence from the AlGaN within quantum wells by current injection. Individual AlxGa1-xN films (x<0≤1) have been grown on Si- and C-terminated 6H-SiC{0001} substrates and characterized for electron emission applications. The large range in the values of x was achieved by changing the fraction of Al in the gas phase from 0 to 0.45. The ionized donor concentration in the n-type, Si-doped AlxGa1-xN films decreased as the mole fraction of Al was increased due to the reduction in the donor energy level and compensation. The use of the SiH4 flow rate, which yields a Si concentration of ~1 x 1019 cm-3 in GaN, established the upper limit of the mole fraction of Al wherein n-type doping could be achieved at ~0.61. -
Multi-Stage Synthesis of Magnesium Nitride Using an Atmospheric-Pressure Dielectric Barrier Discharge
Int. J. Plasma Environ. Sci. Technol. 15 (2021) e02002 (6pp) Regular Paper DOI: 10.34343/ijpest.2021.15.e02002 Multi-stage synthesis of magnesium nitride using an atmospheric-pressure dielectric barrier discharge Shungo Zen*, Yingwen Huang, Nozomi Takeuchi Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-S3-3, Ookayama, Meguro-ku, Tokyo, Japan * Corresponding author: [email protected] (Shungo Zen) Received: 18 March 2021 Revised: 8 May 2021 Accepted: 20 May 2021 Published online: 22 May 2021 Abstract A multi-stage dielectric barrier discharge (DBD) was used to elucidate the reaction pathway for synthesizing Mg3N2 from MgO, nitrogen, and hydrogen using atmospheric pressure plasma. Recently, ammonia has been considered as a promising carbon-free material for hydrogen storage and carrier owing to its high hydrogen density. However, the extensive use of ammonia as an energy carrier has problems with respect to transportation and storage because of its toxicity, odor, and combustibility. Therefore, we consider that Mg3N2 can solve these problems and focus on Mg3N2 synthesis by nitridation of MgO using a DBD in a N2 and H2 atmosphere instead of directly synthesizing ammonia. By investigating the Mg3N2 synthesis pathway using a multi-stage atmospheric pressure plasma, it is considered that H atoms and NH radicals reduce MgO and promote nitriding. Keywords: Ammonia carrier, dielectric barrier discharge, Mg3N2 synthesis, non-thermal plasma. 1. Introduction Owing to significant use of fossil fuel energy, environmental problems such as the greenhouse effect, acid rain, and smog are becoming severe [1]. Recognizing these issues has led to increased attention to renewable energy sources [2]. -
Tunable Light-Emission Through the Range 1.8–3.2 Ev and P-Type Conductivity at Room Temperature for Nitride Semiconductors, Ca(Mg1−Xznx)2N2 (X = 0 – 1)”
Tunable light-emission through the range 1.8–3.2 eV and p-type conductivity at room temperature for nitride semiconductors, Ca(Mg1−xZnx)2N2 (x = 0 – 1) Masatake Tsuji,1 Hidenori Hiramatsu,1,2,a and Hideo Hosono1,2 1: Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Mailbox R3-3, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan 2: Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-1, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan a) Electronic mail: [email protected] 1 Abstract The ternary nitride CaZn2N2, composed only of earth-abundant elements, is a novel semiconductor with a band gap of ~1.8 eV. First-principles calculations predict that continuous Mg substitution at the Zn site will change the optical band gap in a wide range from ~3.3 eV to ~1.9 eV for Ca(Mg1−xZnx)2N2 (x = 0–1). In this study, we demonstrate that a solid-state reaction at ambient pressure and a high-pressure synthesis at 5 GPa produce x = 0 and 0.12, and 0.12 < x 1 polycrystalline samples, respectively. It is experimentally confirmed that the optical band gap can be continuously tuned from ~3.2 eV to ~1.8 eV, a range very close to that predicted by theory. Band-to-band photoluminescence is observed at room temperature in the ultraviolet–red region depending on x. A 2% Na doping at the Ca site of CaZn2N2 converts its highly resistive state to a p-type conducting state. -
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Billeri, Francesca (2019) Interrelations among genres in Khmer traditional music and theatre : Phleng Kar, Phleng Arak, Lkhaon Yiikee and Lkhaon Bassac. PhD thesis. SOAS University of London. http://eprints.soas.ac.uk/30988 Copyright © and Moral Rights for this thesis are retained by the author and/or other copyright owners. A copy can be downloaded for personal non‐commercial research or study, without prior permission or charge. This thesis cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder/s. The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders. When referring to this thesis, full bibliographic details including the author, title, awarding institution and date of the thesis must be given e.g. AUTHOR (year of submission) "Full thesis title", name of the School or Department, PhD Thesis, pagination. INTERRELATIONS AMONG GENRES IN KHMER TRADITIONAL MUSIC AND THEATRE: PHLENG KAR, PHLENG ARAK, LKHAON YIIKEE AND LKHAON BASSAC FRANCESCA BILLERI Thesis submitted for the degree of PhD 2019 Department of Music SOAS, University of London 1 Declaration for SOAS PhD thesis I have read and understood Regulation 21 of the General and Admissions Regulations for students of the SOAS, University of London concerning plagiarism. I undertake that all the material presented for examination is my own work and has not been written for me, in whole or in part, by any other person. I also undertake that any quotation or paraphrase from the published or unpublished work of another person has been duly acknowledged in the work which I present for examination. -
Thermally Induced Irreversibility in the Conductivity of Germanium Nitride MARK and Oxynitride films ⁎ N
Materials Science in Semiconductor Processing 74 (2018) 57–63 Contents lists available at ScienceDirect Materials Science in Semiconductor Processing journal homepage: www.elsevier.com/locate/mssp Thermally induced irreversibility in the conductivity of germanium nitride MARK and oxynitride films ⁎ N. Pintoa,b, , F. Caprolia, G. Maggionic, S. Carturanc, D.R. Napolid a Scuola di Scienze e Tecnologie, sezione di Fisica, Università di Camerino, Camerino, Italy b INFN, sezione di Perugia, Perugia, Italy c INFN, Laboratori Nazionali di Legnaro, Legnaro, PD, Italy d Dipartimento di Fisica e Astronomia, Università di Padova, Padova, Italy ARTICLE INFO ABSTRACT Keywords: We report the evidence for irreversible changes in the conductivity, σT(), of a-Ge3Nx (3.7<<x 4.6) and quasi- Germanium nitride stoichiometric a-Ge2OyNx thin films occurring at T ≳ 630 K, under high vacuum conditions. We have found that Germanium oxynitride σT()curves not only depend on the material properties but also on the thermal history undertaken by films. The Thermal annealing irreversibility in σT(), during heating in vacuum, is correlated to the transformation of the native GeO2 into Electrical conductivity volatile GeO. Thermal annealing in N2 atmosphere, on the contrary, results to extend film stability up to 973 K. At higher T, domes and pits are formed onto the film surface, due to the strong effusion of N-rich volatile species. Unstable N-Ge bonds can explain both the nitrogen thermodynamic instability and the Ge nano-crystallisation process occurring in a-Ge3Nx films, upon heating until 1023 K. Compared to a-Ge3Nx, quasi-stoichiometric a- Ge2OyNx is both more insulating and more stable upon heating up to 1023 K under N2 flow, that makes it a suitable passivating layer material for the fabrication of electronic devices.