DOCSLIB.ORG

United States Patent [191 [11] 4,409,193 Sato Et Al

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
United States Patent [191 [11] 4,409,193 Sato Et Al United States Patent [191 [11] 4,409,193 Sato et al. [45] Oct. 11, 1983 [54] PROCESS FOR PREPARING CUBIC BORON shi Endo, Osamu' Fukunga, Minoru Iwata (1979) NITRIDE 1676-1680. [75] Inventors: Tadao Sato; Tadashi Endo; Osamu Journal of Material Science 16 (1981) 2227-2232, “The Fukunaga, all of Sakura; Minoru Synthesis of cBN Using Ca3B2N4”, Tadashi Endo, Iwata, Matsudo, all of Japan Osamu Fukunga, Minoru Iwata. [73] Assignee: National Institute for Researches in Primary Examiner-Brian E. Hearn Inorganic Materials, Ibaraki, Japan Assistant Examiner—Jackson Leeds Attorney, Agent, or Firm—Oblon, Fisher, Spivak, [21] Appl. No.: 354,354 McClelland & Maier [22] Filed: Mar. 3, 1982 [57] ABSTRACT [30] Foreign Application Priority Data A process for preparing cubic boron nitride comprises Mar. 6, 1981 [JP] Japan ................................ .. 56-32139 heating hexagonal boron nitride and magnesium boron Mar. 20, 1981 [JP] Japan ................................ .. 56-40563 nitride at a temperature of at least 1350“ C. under a [51] Int. Cl.3 ............................................ .. C01B 21/06 pressure at which the cubic boron nitride is thermody namically stable, whereby the cubic boron having high [52] U.S. C]. .. 423/290; 423/279 [58] Field of Search .............................. .. 423/290, 276 strength and high purity can readily be obtainable. Also disclosed is a process for the preparation of magnesium [56] References Cited boron useful as a starting material for the above process. FOREIGN PATENT DOCUMENTS This process comprises mixing hexagonal boron nitride and magnesium nitride or metal magnesium in a molar 506438 6/1971 Switzerland ...................... .. 423/290 ratio of hexagonal boron nitride/magnesium being at OTHER PUBLICATIONS least 0.6, and heating the mixture thus obtained, at a DeVries, R. C. et al., “Journ. Cryst. Growth” 1972, pp. temperature of from 950° to 1250° C. under atmospheric 88-92. pressure in a non-oxidizing atmosphere, eg a nitrogen Chem Abst., vol. 93, 1980, 978240. atmosphere. Journal of Material Science 14, “Precipitation Mecha nism of BN in the Ternary System of B-Mg-N” Tada 10 Claims, 7 Drawing Figures U.S. Patent 0a. 11, 1983 Sheet 1 of 3 4,409,193 (aim)PRESSURE U1 1 I200 I400 I600 I800 TEMPERATURE (°C) US Patent 00:. 11, 1983 Sheet 3 of 3 4,409,193 I27 , 3/ o o 0/240 1 o .ZI/O, ' (2,22 0 I o O \ \ / O O I 1 7 ' o _ O Q .. T 2 f T I 26 F I G. ,7 MAGNESIUM BORONNITRIDE (29=29.6°) I00 INTENS/TIES0F-RAYDIFFRACTIONLINESX 01 O O |000° | I 00° |200° ROOM TEMPERATURE HEATING TEMPERATURE ("c1 4,409,193 1 2 sure required to establish a thermodynamically stable PROCESS FOR PREPARING CUBIC BORON phase of the cubic boron nitride at the temperature. NITRIDE However, calcium boron nitride (Ca3B2N4) has a drawback that it is relatively unstable against moisture. BACKGROUND OF THE INVENTION For instance, when exposed in the air, it will be decom posed into a hydroxide by the moisture in the air. Ac 1. Field of the Invention cordingly, in order to maintain its desired function as The present invention relates to a process for prepar the solvent, it is necessary to take special cares for its ing cubic boron nitride. It relates further to a process for storage or at the time of ?lling it to the high pressure preparing magnesium boron nitride which is useful as a 10 cell. starting material for the production of the cubic boron Now, with respectto a process for the preparation of nitride. magnesium boron nitride useful as a starting material for 2. Description of the Prior Art the production of the cubic boron nitride, it has been Cubic boron nitride, i.e. boron nitride having a cubic reported to form magnesium boron nitride by heating crystal structure, is superior in its chemical stability to 15 boron nitride and metal magnesium at a temperature of diamond, although it is inferior in its hardness to 1150° C. under pressure of 2.5 GP. The magnesium diamond. For instance, it is durable in an oxidizing boron nitride obtained by the reported method, has the atmosphere at a high temperature, and its reactivity following X-ray diffraction peaks. ‘ with an iron group element is extremely small. Accord ingly, it exhibits substantially superior mechanical prop TABLE 1 erties to those of diamond when used for grinding a heat Lattice spacings and intensities obtained from the major resistant high strength material containing nickel or X-ray diffraction lines of the magnesium boron nitride prepared by the conventional method. cobalt as the basic component, or a high speed steel. Lattice Lattice Thus, the cubic boron nitride is a quite useful substance. spacings Intensities spacings Intensities It has been common to prepare the cubic boron ni 25 7.76 weak 1.68 strong tride by treating hexagonal boron nitride at a high tem 3.88 weak 1.65 moderate perature under high pressure in the presence of a cata 3.02 moderate 1.57 moderate - lyst. As the catalyst, there have been known (1) ele 2.69 weak 1.55 moderate ments belonging to Groups Ia and Ila, (2) rare earth 2.59 strong 1.49 moderate 2.44 strong 1.46 moderate elements, actinide elements, tin, antimony, lead, etc. (in 30 2.38 weak 1.32 weak practice, these elements are used in the form of their 2.21 ‘strongest 1.31 weak _ nitrides or alloys), and (3) urea and ammonium salts. 2.12 strong 1.27 weak However, when the above-mentioned metals or al 1.94 moderate 1.22 weak loys are used as the catalyst, unstable boron compounds 1.89 weak 1.19 weak 1.82 moderate 1.10 weak and free boron are likely to form as by-products and 35 1.75 weak they tend to be included in the cubic boron nitride crys In the above relative intensities, strongest = 100, strong = 70 to 30, moderate = 30 tals thereby obtained. The crystals thereby obtained to 10 and weak = 10 to 3. have drawbacks such that they are blackish and opaque, and the strength of the particles is rather low. This method has drawbacks such that high pressure is In the case where the above-mentioned nitrides are required and the productivity is poor. used as the catalyst, unreacted nitrides will remain in the system, and they are likely to be trapped in the cubic SUMMARY OF THE INVENTION boron nitride. Accordingly, it is thereby dif?cult to Accordingly, it is an object of the present invention obtain cubic boron nitride crystals having high quality. to provide a process for preparing cubic boron nitride, Besides, the chemical reaction system is rather compli 45 which is capable of readily producing high strength cated, and it is difficult to properly set the conditions to cubic boron nitride containing little impurities without obtain the desired crystals. the production of chemically complexed reaction prod In the case where the above-mentioned urea or am ucts. monium salts are used as the catalyst, the cubic boron As a result of an extensive research, the present in nitride thereby obtained tends to have an extremely ventors have found that the above object can be small particle size at a level of from 0.1 to 0.5 micron. Its achieved by subjecting hexagonal boron nitride and usefulness as grinding particles will thereby be limited. magnesium boron nitride to heat treatment at a tempera Further, the mechanisms of the chemical reaction and ture of at least 1350° C., i.e. a temperature suf?ciently the product formation are not yet been clearly known, high to dissolve both reactants, under pressure at and accordingly, it is not possible to set the reaction which the cubic boron nitride is thermodynamically conditions to increase the particle size. stable. Other than the methods using such catalysts, it is Thus, the present invention provides a process for known to prepare the cubic boron nitride with use of preparing cubic boron nitride, which comprises heating calcium boron nitride as a solvent. The cubic boron hexagonal boron nitride and magnesium boron nitride at nitride thereby obtained has a high quality with a mini 60 a temperature of at least 1350” C. under pressure at mal content of impurities, and it is also superior in its which the cubic boron nitride is thermodynamically mechanical strength. Namely, during the process of stable. conversion of the hexagonal boron nitride to the cubic Another object of the present invention is to provide boron nitride, the calcium boron nitride serves as a a process for preparing magnesium, boron nitride which solvent for the hexagonal boron nitride, and accord 65 is useful for the production of the cubic boron nitride. ingly, it is possible to crystallize the cubic boron nitride As a result of a research with an aim to obtain magne from the liquid phase by the treatment at a temperature sium boron nitride suitable as a catalyst for the synthesis suf?ciently high to solubilize both reactants, i.e. to es of the cubic boron nitride, the present inventors have tablish a co-solubilization condition, and under a pres found that magnesium boron nitride having X-ray dif 4,409,193 3 4 fraction peaks are different from those of the magne The precipitation or crystallization of the cubic boron sium boron nitride obtained by the above-mentioned nitride is facilitated by the solubilization of the hexago conventional method. nal boron nitride in the molten state of the high pressure Thus, the present invention also provides a process phase. for preparing magnesium boron nitride, which com To obtain single crystals of the cubic boron nitride prises mixing hexagonal boron nitride and magnesium from the magnesium boron nitride and the hexagonal nitride or metal magnesium in a molar ratio of hexago boron nitride, it is necessary to heat the magnesium nal boron nitride/magnesium being at least 0.6, and boron nitride and the hexagonal boron nitride at a tem» heating the mixture thus obtained, at a temperature of perature of at least 1350“ C., preferably from 14000 to from 950° to 1250” C.
Load more

Recommended publications
  • Magnesium Nitride (Mg3n2) Powder
    Magnesium Nitride (Mg3N2) Powder US Research Nanomaterials, Inc. www.us-nano.com SAFTY DATA SHEET Revised Date 12/12/2015 1. PRODUCT AND COMPANY IDENTIFICATION 1.1 Product identifiers Product name: Magnesium Nitride (Mg3N2) Powder Product Number : US1115M Magnesium Nitride (Mg3N2) CAS#: 12057-71-5 1.2 Relevant identified uses of the substance or mixture and uses advised against Identified uses : Research 1.3 Details of the supplier of the safety data sheet Company: US Research Nanomaterials, Inc. 3302 Twig Leaf Lane Houston, TX 77084 USA Telephone: +1 832-460-3661 Fax: +1 281-492-8628 1.4 Emergency telephone number Emergency Phone # : (832) 359-7887 2. HAZARDS IDENTIFICATION 2.1 Classification of the substance or mixture This chemical is considered hazardous by the 2012 OSHA Hazard Communication Standard (29 CFR 1910.1200) 2.2 GHS Label elements, including precautionary statements Pictogram Signal word Warning Hazard statement(s) H260: In contact with water releases flammable gas. H302: Harmful if swallowed. H312: Harmful in contact with skin. H315: Causes skin irritation. H319: Causes serious eye irritation. H332: Harmful if inhaled. H335: May cause respiratory irritation. Precautionary statement(s) P223 Keep away from any possible contact with water, because of violent reaction and possible flash fire. P231+P232 Handle under inert gas. Protect from moisture. P261 Avoid breathing dust/fume/gas/mist/vapors/spray. P280 Wear protective gloves/protective clothing/eye protection/face protection. P301+P312 IF SWALLOWED: Call a POISON CENTER or doctor/physician if you feel unwell. P302+P352 IF ON SKIN: Wash with plenty of soap and water. P304+P340 IF INHALED: Remove victim to fresh air and keep at rest in a position comfortable for breathing.
    [Show full text]
  • Investigations of Mixed-Anion Analogs of Manganite Perovskites and Bimetallic
    Investigations of Mixed-Anion Analogs of Manganite Perovskites and Bimetallic Group II Nitride Fluorides By Oscar Kipruto Keino Submitted in Partial Fulfillment of the Requirements For the Degree of Master of Science in the Chemistry Program YOUNGSTOWN STATE UNIVERSITY December, 2017 Investigations of Mixed-Anion Analogs of Manganite Perovskites and Bimetallic Group II Nitride Fluorides By Oscar Kipruto Keino I hereby release this thesis to the public. I understand that this thesis will be made available from the Ohio LINK ETD Center and the Maag Library Circulation Desk for public access. I also authorize the University or other individuals to make copies of this thesis as needed for scholarly research. Signature: ________________________________________________________________ Oscar Kipruto Keino, Student Date Approvals: ________________________________________________________________ Dr. Timothy R. Wagner, Thesis Advisor Date ________________________________________________________________ Dr. Sherri Lovelace-Cameron, Committee Member Date ________________________________________________________________ Dr. Allen Hunter, Committee Member Date ________________________________________________________________ Dr. Salvatore A. Sanders, Date Dean, College of Graduate Studies iii ABSTRACT Lanthanum manganites are perovskite related materials known in particular for their colossal magnetoresistance (CM) properties. Manganite compositions showing CM behavior are mixed cation compounds such as (CaxLa1-x) MnO3, which contain Mn ions in mixed
    [Show full text]
  • Chemical Names and CAS Numbers Final
    Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number C3H8O 1‐propanol C4H7BrO2 2‐bromobutyric acid 80‐58‐0 GeH3COOH 2‐germaacetic acid C4H10 2‐methylpropane 75‐28‐5 C3H8O 2‐propanol 67‐63‐0 C6H10O3 4‐acetylbutyric acid 448671 C4H7BrO2 4‐bromobutyric acid 2623‐87‐2 CH3CHO acetaldehyde CH3CONH2 acetamide C8H9NO2 acetaminophen 103‐90‐2 − C2H3O2 acetate ion − CH3COO acetate ion C2H4O2 acetic acid 64‐19‐7 CH3COOH acetic acid (CH3)2CO acetone CH3COCl acetyl chloride C2H2 acetylene 74‐86‐2 HCCH acetylene C9H8O4 acetylsalicylic acid 50‐78‐2 H2C(CH)CN acrylonitrile C3H7NO2 Ala C3H7NO2 alanine 56‐41‐7 NaAlSi3O3 albite AlSb aluminium antimonide 25152‐52‐7 AlAs aluminium arsenide 22831‐42‐1 AlBO2 aluminium borate 61279‐70‐7 AlBO aluminium boron oxide 12041‐48‐4 AlBr3 aluminium bromide 7727‐15‐3 AlBr3•6H2O aluminium bromide hexahydrate 2149397 AlCl4Cs aluminium caesium tetrachloride 17992‐03‐9 AlCl3 aluminium chloride (anhydrous) 7446‐70‐0 AlCl3•6H2O aluminium chloride hexahydrate 7784‐13‐6 AlClO aluminium chloride oxide 13596‐11‐7 AlB2 aluminium diboride 12041‐50‐8 AlF2 aluminium difluoride 13569‐23‐8 AlF2O aluminium difluoride oxide 38344‐66‐0 AlB12 aluminium dodecaboride 12041‐54‐2 Al2F6 aluminium fluoride 17949‐86‐9 AlF3 aluminium fluoride 7784‐18‐1 Al(CHO2)3 aluminium formate 7360‐53‐4 1 of 75 Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number Al(OH)3 aluminium hydroxide 21645‐51‐2 Al2I6 aluminium iodide 18898‐35‐6 AlI3 aluminium iodide 7784‐23‐8 AlBr aluminium monobromide 22359‐97‐3 AlCl aluminium monochloride
    [Show full text]
  • Multi-Stage Synthesis of Magnesium Nitride Using an Atmospheric-Pressure Dielectric Barrier Discharge
    Int. J. Plasma Environ. Sci. Technol. 15 (2021) e02002 (6pp) Regular Paper DOI: 10.34343/ijpest.2021.15.e02002 Multi-stage synthesis of magnesium nitride using an atmospheric-pressure dielectric barrier discharge Shungo Zen*, Yingwen Huang, Nozomi Takeuchi Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-S3-3, Ookayama, Meguro-ku, Tokyo, Japan * Corresponding author: [email protected] (Shungo Zen) Received: 18 March 2021 Revised: 8 May 2021 Accepted: 20 May 2021 Published online: 22 May 2021 Abstract A multi-stage dielectric barrier discharge (DBD) was used to elucidate the reaction pathway for synthesizing Mg3N2 from MgO, nitrogen, and hydrogen using atmospheric pressure plasma. Recently, ammonia has been considered as a promising carbon-free material for hydrogen storage and carrier owing to its high hydrogen density. However, the extensive use of ammonia as an energy carrier has problems with respect to transportation and storage because of its toxicity, odor, and combustibility. Therefore, we consider that Mg3N2 can solve these problems and focus on Mg3N2 synthesis by nitridation of MgO using a DBD in a N2 and H2 atmosphere instead of directly synthesizing ammonia. By investigating the Mg3N2 synthesis pathway using a multi-stage atmospheric pressure plasma, it is considered that H atoms and NH radicals reduce MgO and promote nitriding. Keywords: Ammonia carrier, dielectric barrier discharge, Mg3N2 synthesis, non-thermal plasma. 1. Introduction Owing to significant use of fossil fuel energy, environmental problems such as the greenhouse effect, acid rain, and smog are becoming severe [1]. Recognizing these issues has led to increased attention to renewable energy sources [2].
    [Show full text]
  • Tunable Light-Emission Through the Range 1.8–3.2 Ev and P-Type Conductivity at Room Temperature for Nitride Semiconductors, Ca(Mg1−Xznx)2N2 (X = 0 – 1)”
    Tunable light-emission through the range 1.8–3.2 eV and p-type conductivity at room temperature for nitride semiconductors, Ca(Mg1−xZnx)2N2 (x = 0 – 1) Masatake Tsuji,1 Hidenori Hiramatsu,1,2,a and Hideo Hosono1,2 1: Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Mailbox R3-3, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan 2: Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-1, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan a) Electronic mail: [email protected] 1 Abstract The ternary nitride CaZn2N2, composed only of earth-abundant elements, is a novel semiconductor with a band gap of ~1.8 eV. First-principles calculations predict that continuous Mg substitution at the Zn site will change the optical band gap in a wide range from ~3.3 eV to ~1.9 eV for Ca(Mg1−xZnx)2N2 (x = 0–1). In this study, we demonstrate that a solid-state reaction at ambient pressure and a high-pressure synthesis at 5 GPa produce x = 0 and 0.12, and 0.12 < x 1 polycrystalline samples, respectively. It is experimentally confirmed that the optical band gap can be continuously tuned from ~3.2 eV to ~1.8 eV, a range very close to that predicted by theory. Band-to-band photoluminescence is observed at room temperature in the ultraviolet–red region depending on x. A 2% Na doping at the Ca site of CaZn2N2 converts its highly resistive state to a p-type conducting state.
    [Show full text]
  • Formation, Stability and Presence of Magnesium Nitride in Magnesium Recycling Processes
    ZOBODAT - www.zobodat.at Zoologisch-Botanische Datenbank/Zoological-Botanical Database Digitale Literatur/Digital Literature Zeitschrift/Journal: Berichte des Institutes für Geologie und Paläontologie der Karl- Franzens-Universität Graz Jahr/Year: 2004 Band/Volume: 9 Autor(en)/Author(s): Bauer Christoph, Mogessie Aberra, Galovsky Ulrike Artikel/Article: Formation, stability and presence of magnesium nitride in magnesium recycling processes. 70-71 ©Institut f. Erdwissensch., Geol. u. Paläont., Karl-Franzens-Universität Graz; download www.biologiezentrum.at Ber. Inst. Erdwiss. K.-F.-Univ. Graz ISSN 1608-8166 Band 9 Graz 2004 FORMATION, STABILITY AND PRESENCE OF MAGNESIUM NITRIDE IN MAGNESIUM RECYCLING PROCESSES Christoph BAUER1, Aberra MOGESSIE1 & Ulrike GALOVSKY2 1 Karl-Franzens Universität Graz 2 Leichtmetall Kompetenzzentrum Ranshofen In this study an attempt has been made to find methods of detecting magnesium nitride and to investigate in which part of the magnesium recycling process it is concentrated. As a light metal, magnesium has several interesting properties which enable it to be used in the automotive industry. Among the most important properties are its density and strength. Molten magnesium is unstable when exposed to air, and the usage of cover gases like SO2 or SF6 is necessary. For purifying the alloys, nitrogen is blown through the melt, so that impurities adhere to the bubbles’ surface and form compounds, which can be easily separated by gravitation. To produce high quality magnesium alloys, it is necessary to investigate the nitrogen compounds and their disposition. In moisture bearing environment, exothermic reactions take place when magnesium nitride reacts to ammonium and brucite and also when aluminium nitride reacts to ammonium and gibbsite.
    [Show full text]
  • Mg3n2 Nanocrystallites Formation During the Gan:Mg Layers Growth by the NH3-MBE Technique
    Journal of Crystal Growth 554 (2021) 125963 Contents lists available at ScienceDirect Journal of Crystal Growth journal homepage: www.elsevier.com/locate/jcrysgro Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique T.V. Malin a, V.G. Mansurov a, Yu.G. Galitsyn a, D.S. Milakhin a, D.Yu. Protasov a,c, B.Ya. Ber b, D. Yu. Kazantsev b, V.V. Ratnikov b, M.P. Shcheglov b, A.N. Smirnov b, V.Yu. Davydov b, K. S. Zhuravlev a,d,* a Physics and Engineering of Semiconductor Structures Department, Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, Russia b Ioffe Institute, St. Petersburg 194021, Russia c Novosibirsk State Technical University, Novosibirsk 630087, Russia d Novosibirsk State University, Novosibirsk 630090, Russia ARTICLE INFO ABSTRACT Communicated by H. Asahi The work is devoted to the study of p-GaN: Mg epitaxial layers grown by the ammonia MBE technique. We find that the conductivity of GaN layers doped with Mg does not change with a postgrowth heat treatment. Formation Keywords: of Mg3N2 nanocrystallites on GaN surface during epitaxial growth of the GaN layer with a high magnesium A1. Mg3N2-crystallites doping level was detected by the RHEED technique for the first time. It was shown that the Mg3N2 nano­ A3. Ammonia-MBE crystallites formation competes with the acceptor states formation process. It has been proposed that the growth B1. p-GaN temperature can be applied as an additional “tuning” mechanism which affects the Mg incorporation into the B1. GaN:Mg A1. RHEED growing GaN:Mg layers.
    [Show full text]
  • Nitrogen 1 Nitrogen
    Nitrogen 1 Nitrogen Nitrogen Appearance colorless gas, liquid or solid Spectral lines of Nitrogen General properties Name, symbol, number nitrogen, N, 7 Pronunciation /ˈnaɪtrɵdʒɪn/ nye-tro-jin Element category nonmetal Group, period, block 15, 2, p −1 Standard atomic weight 14.0067(2) g·mol Electron configuration 1s2 2s2 2p3 Electrons per shell 2, 5 (Image) Physical properties Phase gas Density (0 °C, 101.325 kPa) 1.251 g/L Melting point 63.15 K,-210.00 °C,-346.00 °F Boiling point 77.36 K,-195.79 °C,-320.33 °F Triple point 63.1526 K (-210°C), 12.53 kPa Critical point 126.19 K, 3.3978 MPa Heat of fusion (N ) 0.72 kJ·mol−1 2 Heat of vaporization (N ) 5.56 kJ·mol−1 2 Specific heat capacity (25 °C) (N ) 2 29.124 J·mol−1·K−1 Vapor pressure P/Pa 1 10 100 1 k 10 k 100 k at T/K 37 41 46 53 62 77 Atomic properties Nitrogen 2 Oxidation states 5, 4, 3, 2, 1, -1, -2, -3 (strongly acidic oxide) Electronegativity 3.04 (Pauling scale) Ionization energies 1st: 1402.3 kJ·mol−1 (more) 2nd: 2856 kJ·mol−1 3rd: 4578.1 kJ·mol−1 Covalent radius 71±1 pm Van der Waals radius 155 pm Miscellanea Crystal structure hexagonal Magnetic ordering diamagnetic Thermal conductivity (300 K) 25.83 × 10−3 W·m−1·K−1 Speed of sound (gas, 27 °C) 353 m/s CAS registry number 7727-37-9 Most stable isotopes iso NA half-life DM DE (MeV) DP 13N syn 9.965 min ε 2.220 13C 14N 99.634% 14N is stable with 7 neutron 15N 0.366% 15N is stable with 8 neutron Nitrogen ( /ˈnaɪtrɵdʒɪn/ ny-trə-jin) is a chemical element that has the symbol N, atomic number of 7 and atomic mass 14.00674 u.
    [Show full text]
  • Thermodynamic and Kinetic Analysis of Nitrogenization in Desulfurization of Hot Metal by Magnesium Injection
    ISIJ International, Vol. 49 (2009), No. 6, pp. 771–776 Review Thermodynamic and Kinetic Analysis of Nitrogenization in Desulfurization of Hot Metal by Magnesium Injection Haiping SUN,1,2) Yung-Chang LIU1) and Muh-Jung LU1) 1) Steel & Aluminum Research & Development Department, China Steel Corporation, Kaohsiung 81233, Taiwan. E-mail: [email protected] 2) School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia. E-mail: [email protected] (Received on November 25, 2008; accepted on February 18, 2009) Literature study and thermodynamic/kinetic analysis have been carried out on the effect of carrier gas on hot metal desulfurization by magnesium injection. The literature study shows that the magnesium efficiency of the process could be deteriorated by using nitrogen as carrier gas, but the difference in magnesium effi- ciency for the process using argon and that using nitrogen was not clearly identified. Thermodynamic/ki- netic analysis shows that when nitrogen is used as carrier gas for introducing magnesium into hot metal, the formation of magnesium nitride is possible in the regions close to the lance tip. The nitride formed at lance tip may cause lance clogging. Magnesium nitride is unstable in hot metal or in gas at high tempera- tures; and after leaving lance tip regions, magnesium nitride will undergo decomposition. Magnesium loss in process off gas will be increased by the decomposition of magnesium nitride that occurs too closely to bath surface or by any un-decomposed magnesium nitride at bath surface. The magnesium loss by nitroge- nization and the clogging problem could be minimized by optimizing injection conditions.
    [Show full text]
  • Chemical Safety and Waste Management Manual
    Chemical Safety and Waste Management Manual University of Alabama at Birmingham Department of Occupational Health & Safety Chemical Safety Division 2002 EDITION 1. INTRODUCTION In a comparatively short time, the University of Alabama at Birmingham has gained significant recognition as a center of excellence for teaching, medical services and research programs. This is a highly commendable achievement and one that could not have been realized without the continued support and dedication of faculty, staff members, and employees. Similar unfailing cooperation and support are necessary for the institution to be equally successful in its development of a comprehensive occupational health and safety program for the protection of University personnel, students, and the surrounding community. An important part of this program is concerned with the safe and prudent handling of chemicals and their proper legal disposal as regulated by the Environmental Protection Agency (EPA) and the Alabama Department of Environmental Management (ADEM). Almost every laboratory and many allied and support personnel at UAB use chemicals in their daily activities. It is the purpose of this manual to describe the operation of the Chemical Safety Program and to provide guidance in establishing safe work practices for the use of chemicals. This program applies to all work operations at this University where employees may be exposed to hazardous substances under normal working conditions or during an emergency. The Chemical Safety and Waste Management Manual combines both the Chemical Hygiene Plan for laboratories and the Hazard Communication Program for maintenance, environmental services, and other support personnel. The Occupational Safety and Health Administration (OSHA) Hazard Communication Standard may be found at : http://www.osha- slc.gov/OshStd_data/1910_1200.html.
    [Show full text]
  • Epitaxial Growth and Optical Properties of Mg3n2, Zn3n2, and Alloys by Peng Wu B.Sc., Xinjiang Normal University, 2010 M.Sc., Xi
    Epitaxial Growth and Optical Properties of Mg3N2, Zn3N2, and alloys by Peng Wu B.Sc., Xinjiang Normal University, 2010 M.Sc., Xinjiang Normal University/University of Science and Technology of China (joint), 2013 A Dissertation Submitted in Partial Fulfillment of the Requirements for the Degree of DOCTOR OF PHILOSOPHY in the Department of Electrical and Computer Engineering ã Peng Wu, 2019 University of Victoria All rights reserved. This dissertation may not be reproduced in whole or in part, by photocopy or other means, without the permission of the author. ii Supervisory Committee Epitaxial Growth and Physics Properties of Mg3N2, Zn3N2, and alloys by Peng Wu B.Sc., Xinjiang Normal University, 2010 M.Sc., Xinjiang Normal University/University of Science and Technology of China (joint), 2013 Supervisory Committee Thomas Tiedje, (Department of Electrical and Computer Engineering) Supervisor Reuven Gordon, (Department of Electrical and Computer Engineering) Departmental Member Frank Van Veggel, (Department of Chemistry) Outside Member iii Abstract Supervisory Committee Thomas Tiedje, (Department of Electrical and Computer Engineering) Supervisor Reuven Gordon, (Department of Electrical and Computer Engineering) Departmental Member Frank Van Veggel, (Department of Chemistry) Outside Member Zinc nitride and magnesium nitride are examples of the relatively unexplored II3V2 group of semiconductor materials. These materials have potential applications in the electronics industry due to their excellent optical and electrical properties. This study mainly focuses on the growth and characterization of the new semiconductor materials: zinc nitride, magnesium nitride, and their alloys. The (100) oriented zinc nitride thin films were grown on both (110) sapphire substrates and (100) MgO substrates by plasma-assisted molecular beam epitaxy (MBE).
    [Show full text]
  • BIBLIOGRAPHY on the HIGH TEMPERATURE CHEMISTRY and PHYSICS of MATERIALS
    n*- Reference t *r«tM™°- wT0,08 Library, t-01 irons jul 3 BBa taken NBS SPECIAL PUBLICATION 315-1 BIBLIOGRAPHY ON THE HIGH TEMPERATURE CHEMISTRY AND PHYSICS OF MATERIALS JANUARY, FEBRUARY, MARCH 1969 U. S. DEPARTMENT OF COMMERCE NATIONAL BUREAU OF STANDARDS — NBS TECHNICAL PUBLICATIONS PERIODICALS N0NPERI0DICALS JOURNAL OF RESEARCH reports National Applied Mathematics Series. Mathematica Bureau of Standards research and development in tables, manuals, and studies. physics, mathematics, chemistry, and engineering. Building Comprehensive scientific papers give complete details Science Series. Research results, tes methods, of the work, including laboratory data, experimental and performance criteria of building ma procedures, and theoretical and mathematical analy- terials, components, systems, and structures. ses. Illustrated with photographs, drawings, and Handbooks. Recommended codes of engineerin charts. and industrial practice (including safety codes) de veloped in cooperation with interested industries Published in three sections, available separately: professional organizations, and regulatory bodies. Special • Physics and Chemistry Publications. Proceedings of NBS con ferences, bibliographies, annual reports, wall charte pamphlets, etc. Papers of interest primarily to scientists working in these fields. This section covers a broad range of Monographs. Major contributions to the techni physical and chemical research, with major emphasis cal literature on various subjects related to th on standards of physical measurement, fundamental Bureau's scientific and technical activities. constants, and properties of matter. Issued six times National Standard Reference Data Series a year. Annual subscription: Domestic, $6.00; for- NSRDS provides quantitative data on the physics eign, $7.25*. and chemical properties of materials, compiled fror the world's literature and critically evaluated. • Mathematical Sciences Product Standards.
    [Show full text]