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SRAM Edram DRAM Technology Challenges and Directions of SRAM, DRAM, and eDRAM Cell Scaling in Sub- 20nm Generations Jai-hoon Sim SK hynix, Icheon, Korea Outline 1. Nobody is perfect: Main memory & cache memory in the dilemma in sub-20nm era. 2. SRAM Scaling: Diet or Die. 6T SRAM cell scaling crisis & RDF problem. 3. DRAM Scaling: Divide and Rule. Unfinished 1T1C DRAM cell scaling and its technical direction. 4. eDRAM Story: Float like a DRAM & sting like a SRAM. Does logic based DRAM process work? 5. All for one. Reshaping DRAM with logic technology elements. 6. Conclusion. 2 Memory Hierarchy L1$ L2$ SRAM Higher Speed (< few nS) Working L3$ Better Endurance eDRAM Memory (>1x1016 cycles) Access Speed Access Stt-RAM Main Memory DRAM PcRAM ReRAM Lower Speed Bigger Size Storage Class Memory NAND Density 3 Technologies for Cache & Main Memories SRAM • 6T cell. • Non-destructive read. • Performance driven process Speed technology. eDRAM • Always very fast. • 1T-1C cell. • Destructive read and Write-back needed. • Leakage-Performance compromised process technology. Standby • Smaller than SRAM and faster than Density Power DRAM. DRAM • 1T-1C cell. • Destructive read and Write-back needed. • Leakage control driven process technology. • Not always fast. • Smallest cell and lowest cost per bit. 4 eDRAM Concept: Performance Gap Filler SRAM 20-30X Cell Size Cell eDRAM DRAM 50-100X Random Access Speed • Is there any high density & high speed memory solution that could be 100% integrated into logic SoC? 5 6T-SRAM Cell Operation VDD WL WL DVBL PU Read PG SN SN WL Icell PD BL VSS BL V SN BL BL DD SN PD Read Margin: Write PG PG V Write Margin: SS PU Time 6 DRAM’s Charge Sharing DVBL VS VBL Charge Sharing Write-back VPP WL CS CBL V BL DD 1 SN C V C V C C V S DD B 2 DD S B BL 1/2VDD Initial Charge After Charge Sharing DVBL T d 1 1 V BL SS DVBL VBL VBL VDD 1 CB / CS 2 VBBW Time 1 1 I t L RET if cell leakage included Cell select DVBL VDD 1 CB / CS 2 CS 7 DRAM Scalability Metrics BL Cell WL CS • Cell CS. CB • Parasitic BL CB. Sensing + • Cell leakage current. - + - • BL offset voltage. DV • Cell ION current. BL(OFF) 1 1 I t Speed CB L RET DVBL • WL & BLVDD resistance. BL 1 CB / CS 2 CS 8 DRAM’s Bitline Offset Voltage C K DC D DR DV 0.5 B B n _SA B noise DV BL(OFF) TH _SA n _SA CB n _SA R B BL BL caused by AC effect (RC mismatches) caused by DC effect (VTH mismatch) Data pattern dependent Slope= K fN 2 2 2 2 2 time VTH WKF RDF GOX LER • Bitline pitch & cell architecture are critical to DVTH_SA. • Offset voltage caused by RC effect increases as pull-down speed becomes faster. KeDRAM ~ 10xKDRAM. [K. Itoh, VLSI memory chip design, Springer, 2001.] 9 6T-SRAM Cell VSS VDD BLB PU CPP PD PG WL WL PG PD PU BL VDD VSS M1 Pitch VSS VDD BL Unit Cell WL N-Well WL Contact 2x CPP Gate Active BL VDD VSS = 5x M1 Pitch 10 Contacted Poly Pitch (CPP) CPP CPP (CPP-LG)/2 )/2 [nm] G L - (CPP-LG)/2 CT CT , (CPP Gate G Poly LG CPP, L CPP, n+ n+ (CPP - LG)/2 = CT/2 + Spacer Design Rule F [nm] • Gate length LG shrunk only 5nm during past 4 technology generations (65nm to 22nm). • CPP scaling is mostly driven by Spacer & CT scaling and scaled by 30% every 2 years [ same as design rule F]. 11 SRAM Cell Scaling Trend A 2 130nm Cell Size 10 (CPP- LG ) LG L G B /(CPP ] 2 90nm m m 65nm – L • As (CPP-L )/2 approaches L at G G G C 45nm ) Ratio [nm/nm] 22nm generation, LG effect is no 32nm more negligible in cell size scaling. 22nm • LG should be shrunk by 20~30% A: no LG shrink (same as @22nm) SRAM SRAM Cell Size [ in 15nm generation to keep B: LG shrunk by 20% every generation current cell size scaling trend. C: LG shrunk by 30% every generation (CPP – LG)/2 [nm] • SRAM cell size correlates well with (CPP – LG)/2 until 22nm generation. • For SRAM cell size = 0.01Xmm2, the CT/2 + Spacer = 8.0nm (equivalent to F = 5nm). 12 VTH Impact on SRAM Scaling Icell Icell VTH 32nm VTH 45nm Pass pMOS pMOS Vt 65nm pMOS Vt 180nm 90nm 130nm 1/ WL nMOS Vt [H. Yamauchi, J. STS, Mar. 2009.] nMOS Vt [K. Kuhn, et al, Intel Tech. J., June 2008.] 13 DRAM’s Scaling Analysis (1): IL=0 Case IL t RET 0.5VDD CS DVBL (1) 1 CB / CS [V] When cell leak current = 0, eqn. (1) can be simplified as DD_MIN V VDD _ MIN 2DVBL(OFF) (1 CB / CS ) DVBL(OFF) : bitline offset voltage including sense amplifier device mismatch and other electrical mismatches. CB/CS Ratio • For decreasing CS value, CB or DVBL(OFF) should be reduced in order to keep same MAT size (# of cells per bitline kept same) under same VDD_MIN condition. • Maximum CB/CS value could be simply determined by target VDD_MIN and DVBL(OFF) . 14 DRAM’s Scaling Direction DVBL(OFF) IL Scaling Scaling CB scaling is strongly dependent on cell innovation but is a weak function CB of direct cell size shrink. Prohibited ① If C should be reduced w/o cell innovation, Region S DVBL(OFF) & IL should be improved: ① • Improve SA’s mismatches – DVTH & D. • Improve DCB & DRB. ② • Junction engineering. ② Decreasing CB as CS scales downs: • New cell innovation, Buried WL. CS • New materials for BL: Low-K Dielectric, Air Gap, etc. 15 Cell Capacitor Scaling (1) EOT [Å] 50 SIS or MIS, Concave or Cylinder 40 30 Al2O3 20 MIM, Cylinder 10 HfO2 & Al2O3 7 MIM, Pillar 5 ZrO2 & Al2O3 4 3 High-k Ultra high-k 2000 2002 2004 2006 2008 2010 2012 2014 Year [Source : ITRS 2000~2010] 16 Cell Capacitor Scaling (2) Cs [A.U.] Aspect Ratio 6 100 Expected Cs 3Å 5 80 Pillar Cap. 4Å 4 60 3 40 Cylinder Cap. 2 20 A/R ▶ 1 0 70nm 60nm 50nm 40nm 30nm 20nm 10nm [DRAM Technology Node] [S. Cha, IEDM, 2011] 17 Bitline Capacitance Scaling Reduce BL-WL cap: Buried WL [T. Schloesser et al., IEDM 2008.] Reduce BL length: 4F(8F2) 2F(6F2) 8F2 6F2 BL BL 18 Bitline Capacitance Scaling (3) 6F2 8F2 > 8F2 4F2 Cells/BL of Number 3D Capacitor Ratio S /C B 6F2 C + Buried WL COB Design Rule [nm] 19 eDRAM Technology Trend “eDRAM cell = Fast as SRAM cell but small as DRAM cell” Technologywise: Non-self-aligned cell process. It should be logic technology based. 6-7x bigger cell size. • Logic design rule. but still 3-4x smaller than SRAM. • Logic cell passgate transistor. • Silicided cell junctions. Fast cell read/write access. • Logic transistors for bitline SA & periphery circuits. 100-1000x leakage current. • Low-K/Cu BEOL for bitline and BEOL layers. Shorter retention time. • 3D Cell capacitor module process. Designwise: fast DRAM design with logic VDD range. • Reduce bitline length (16-64 cells/BL). Fast signal development. • Improve low VDD margin: VDD or GND bitline sensing. 20 DRAM vs. eDRAM DRAM eDRAM Process 3 metal DRAM process > 5 metal logic process Technology Cell Size ~ 6F2/cell ~ 30-50F2/cell GOX 5-6nm 2.5-3.5nm Bitline W M1 (Cu) – CUB; W – COB Bitline length > 512 cells/BL 16-32 cells/BL Metal Layers 1(M0) + 3 layers 5-6 layers Cell capacitor Cylinder Cylinder VPP 3.0V < 2.0V VDD 1.2-1.5V 0.9-1.0V Storage junction -- Silicided Leakage current < 1fF/cell@95C ~ 1pA/cell@115C Refresh time 64mS@95C < few mS BL sensing 1/2VDD sensing VDD or GND sensing Read Speed tRCD+tCL=23nS, tRAS+tRP=45nS 3-10nS 21 ML eDRAM Technology: CUB BL (M1) TE Hole Open Top Electrode (TE) Hi-K Dielectric Stacked Bottom Electrode (BE) Contact Stacked Contact GC n+ n+ STI Capacitor [Y. Yamagata, CICC, 2006.] eDRAM Capacitor Process Logic FEOL [[1] Y. Yamagata, CICC, 2006. [2] K. Tu, IEDM, 2011.] 22 Capacitor Under Bitline (CUB) & DT eDRAM BL BLi+1 Contact Gate BLi Active BLi ISO Pitch WLi WLi+1 WLi+2 WLi+3 Cell Size ~ 32F2. CPP_ISO CPP_PG • Cell height is determined by isolation pitch & GC-AA overlay. Height ~ 4F. • Cell width is limited by CPP and poly pitch. Width ~ 8F. • Cell PG device gate length and width limited by retention leakage and operation speed, respectively. PG device Lg = 2F~3F, W = 2F~3F. 23 ML eDRAM Technology: COB+Deep CT M1 (Cu) Triple Stacked BLC Contact Capacitor BL (W) GC [Y. Yamagata, CICC, 2006.] n+ n+ STI • BL (Tungsten) dedicated metal process equipment required. • CBL and RBL decoupled with cell capacitance: Good for eDRAM’s low voltage and high speed operation. But cell capacitor height limited by M1 contact’s aspect ratio. For logic part, M1C limits logic’s high speed & low voltage performance. 24 Capacitor Over Bitline (COB) eDRAM BLi+1 BL BLi+1 Contact Gate BLi Active BLi WLi WLi+1 WLi+2 WLi+3 WLi+4 Cell Size ~ 40F2. • Cell height ~ 4F, cell width ~ 10F. • AA space, BL width and BL-SN spacing are the critical rules. 25 SRAM, eDRAM, & DRAM Cell Scaling Trend SRAM eDRAM ] 2 DRAM m m 0.0228 0.008 Cell Size [ Size Cell 6F2 0.0006 4F2 Design Rule F [nm] 0.0004 26 Memory Cell Size Factor Trend 190.1 228 167.0 170.9 134.9 123.5 2.85x 3.7x 80 52.5 5.0x 44.6 36.4 27.3 8 Cell Size Factor Size Cell 6 6 6 4 Design Rule F [nm] 27 Memory Market Positioning L1 Cache <1nS L2 Cache <5nS eDRAM Speed L3 Cache 3-10nS <10nS DRAM >30nS Memory Size [Mb/mm2] 28 New Memory Technology: Stt-RAM [S.
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