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A History of Engineering & Science in the Bell System—Electronics Technology (1925–1975)

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A History of Engineering & Science in the Bell System—Electronics Technology (1925–1975) TCI Library: www.telephonecollectors.info TCI Library: www.telephonecollectors.info TCI Library: www.telephonecollectors.info TCI Library: www.telephonecollectors.info A History of Engineering and Science in the Bell System Electronics Technology (1925-197 5) Prepared by Members of the Technical Staff, AT&T Bell Laboratories. F. M. Smits, Editor. AT&T Bell Laboratories TCI Library: www.telephonecollectors.info Credits for figures taken from other than Bell System sources appear on page 359. Inquiries may be made to the following address: AT&T Technologies Commercial Sales Clerk Select Code 500-472 PO Box 19901 Indianapolis,. Indiana 46219 1-800-432-6600 Copyright@ 1985 AT&T Bell Laboratories All rights reserved First Printing, 1985 International Standard Book Number: 0-932'764-07-X Library of Congress Catalog Card Number: 84-73157 Printed in the United States of America TCI Library: www.telephonecollectors.info Contents Acknowledgments . ix Introduction . xi 1. The Transistor . 1 I. Invention of the Transistor, 1. Research Leading to the Invention, 1. Public Announcement, 13. Establishing Fundamental Understanding, 17. II. Initial Transistor Development, 20. Development of the Point-Contact Transistor, 20. Crystal Growth and Demonstration of the Junction Transistor, 22. Information Disclosure and Teaching, 27. III. Early Transistor Manufac­ ture, 30. IV. The Emergence of Germanium Junction Transistors, 32. Junction Transistors: Concepts, Uses, Structures, and Technology, 32. Alloy Junction Technology, 36. Germanium Alloy Transistors in the Bell System, 38. V. The Appearance of Silicon, 40. Diffusion and Silicon, 40. Diffused­ Base Transistors, 43. Improving Silicon Technology, 57. VI. Transistors/ Diodes for Bell System Applications: Fall 1957, 60. Two-Region Devices­ Diodes, 60. Three-Region Devices, 61. Four-Region Devices, 61. Applications, 62. VII. Progress in Silicon Technology and Device Structures, 62. Epitaxial Transistor, 62. Oxide Stabilization and the Metal-Oxide-Semiconductor Tran­ sistor, 64. Planar Transistor, 65. Reliability Improvements, 67. Gettering of Impurities, 69. VIII. Discrete Semiconductor Business: The Early 1960s, 71. IX. Examples of System Applications, 71. The Telstar I Experiment, 71. Silicon Device Applications in Digital Systems, 77. Active Devices for TD-3 Radio Relay, 78. X. Transistors in the Era of Integrated Circuits, 88. XI. Millimeter and Microwave Avalanche Diodes, 90. Device Development, 90. Applications in the Bell System, 92. XII. Impact of the Invention, 94. References, 94. 101 2. Silicon Integrated Circuits . I. Introduction, 101. II. Early Technology Developments, 102. III. Overview of Silicon Integrated Circuit Evolution, 106. IV. Bipolar Integrated Circuits, 109. Bipolar Device Structure, 109. Beam Lead Sealed-Junction (BLSJ) Tech­ nology, 110. Logic Circuits, 113. Ion Implantation, 115. Catalog Transistor­ Transistor Logic (TTL), 116. Bipolar Linear Circuits, 117. V. Solid-State Crosspoints, 118. VI. Metal-Oxide-Semiconductor (MOS) Integrated Circuits, 119. MOS Device Structure, 119. Dual Dielectric MOS Integrated Circuits, 120. Silicon Gate MOS ICs and Semiconductor Memories, 121. Complementary MOS ICs, 123. Charge-Coupled Devices, 124. VII. Photolithography, Mask Making, and Computer-Aided Design, 126. VIII. Conclusion, 128. Refer­ ences, 129. v TCI Library: www.telephonecollectors.info vi Contents 3. Electron Tubes . 133 I. Early Work on Electron Tubes, 133. II. Telephony and Broadcasting in the 1930s, 136. High-Power Broadcast Tubes, 136. The Trend to Higher Frequencies, 139. Cathode Ray Tubes, 1·42. Phototubes, 145. Gas Tubes, 146. The Design of Electron Beams, 147 . UI. Military Development During World War II, 148. Receiving-Type Tubes, 148. Reflex Oscillators, 150. Magnetrons, 157. Gas-Filled Tubes for Radar, 162. IV. Post-World War II Period, 165. Cathode Improvement, 166. Klystrons and Microwave Triodes, 169. Traveling Wave Tubes, 172. High-Figure-of-Merit Carrier Tubes, 178. Gas Tubes, 181. V. Electron Tubes for Submarine Cable Systems, 183. VI. PICTUREPHONE* Visual Telephone Service Tubes, 188. VH. Tubes for Electronic Switching Systems, 189. Bar:rier Grid Storage Tube, 190. Cathode Ray Tube for Flying Spot Store, 190. Talking Path Gas Tube, 191. VIII. Epilogue, 194. References, 194. 4. Optical Devices . 197 I. Introduction, 197. II. Lasers and Light-Emitting Diodes, 198. III. Light­ Deflection and -Modulation Devices, 205. IV. Light-Detection DE�vices, 208. V. Optoisolators, 212. VI. Imag·e Display Devices, 213. VII. Devices for Lightwave Communications, 217. References, 219. 5. Magnetic Memories . 223 I. Introduction, 223. II. The Ferrite Core and Ferrite Sheet, 2�25. lit The Twistor, 232. IV. Bubble Technology, 241. V. Conclusion, 251. References, 252. 6. Piezoelectric Devices . 255 I. Early Quartz Resonators and FiiltE�rs, 255. II. Resonator Technology Refinements, 258. III. Military Appli•:altions During World War II, 262. IV. Ultrasonic Delay Lines, 263. V. Platt�d Electrode Units, 267. VI. Precision Frequency Control, 271. VII. MathE�matical Modeling of Mode Spectra, 273. VIII. Cultured Quartz Growth, ��75. IX. Monolithic Crystal Filters, 277. X. Concluding Remarks, 280. References, 280. 7. Relays and Switches . 285 I. Introduction, 285. II. Exposed-Contact Relays, 286. III. Sealt!d Contacts, 294. IV. Switches, 301. V. Concluding Remarks, 307. References, 307. 8. Capacitors and Resistors . .. 311 I. Capacitors, 311. Introduction, 311. Paper Capacitors, 313. Mica Capacitors, 317. Ceramic Capacitors, 318. Substitutes for Mica Capacitors, 319. Organic • Trademark of AT&T. TCI Library: www.telephonecollectors.info Contents vii Film Capacitors, 319. Metalized Film Capacitors, 321. Electrolytic Capacitors, 322. 11. Resistors, 326. Introduction, 326. Wire-Wound Resistors, 326. Deposited Carbon Resistors, 328. Tantalum Film Resistors, 329. III. Concluding Remarks, 331. References, 332. 9. Thin-Film Circuits . 335 I. Introduction, 335. II. Early Developments Leading to Resistor Circuits, 336. III. Capacitors and Thermocompression Bonding, 341. IV. Intercon� nection with Crossovers, 349. V. Transfer of Film Technology into Pro� duction, 353. VI. Conclusions, 354. References, 355. Credits 359 361 Index ............................................ TCI Library: www.telephonecollectors.info TCI Library: www.telephonecollectors.info Acknowledgments This volume on electronics technology is the sixth book in the series on the History of Engineering and Science in the Bell System to be published by AT & T Bell Laboratories. The manuscripts for each chapter were prepared by one or more principal authors, who in turn received significant help from many of their colleagues. All principal authors are recognized au­ thorities on their topics. Chapter 1 on the history of the transistor was prepared by J. A. Hornbeck. He drew on detailed background insights provided by A. E. Anderson. S. 0. Ekstrand provided guidance relating to developments inPennsylvania, W. Shockley reviewed the section on the early history of the transistor, and D. S. Peck critically examined sections on reliability. The history of integrated circuits was prepared by J. M. Goldey, with the assistance of J. H. Forster and B. T. Murphy. In eliminating overlap, some material initially prepared for Chapter 1 by J. A. Hornbeck was moved to Chapter 2. Chapter 3 on electron tubes is the work of V. Rutter, L. Von Ohlsen, and W. Van Haste; S. 0. Ekstrand provided major editorial guidance. L. A. D' Asaro and L. K. Anderson are the principal authors of Chapter 4, on optical devices. J. E. Geusic made major contributions, with additional material provided by M. DiDomenico, A. A. Bergh, B. D. DeLoach, Jr., and H. A. Watson. The history of magnetic memories (Chapter 5) was prepared by A. H. Bobeck and L. W. Stammerjohn. R. A. Sykes and T. R. Meeker provided Chapter 6, on piezoelectric devices; E. J. Alexander assisted greatly in editing that chapter. Chapter 7, covering relays and switches, was authored by S. J. Elliott; editorial comments were provided by J. M. Morabito. Chapter 8, on ca­ pacitors and resistors, is the work of C. T. Goddard. Chapter 9, the story of thin-film circuits, was drafted by R. W. Berry and D. Gerstenberg, with additional input from H. Basseches. The Bell Laboratories work on devices and components draws heavily on related research work. The material covered in the present volume therefore complements the history of Physical Sciences and Communication Sciences, volumes 4 and 5 of this series. S. Millman, the editor of these volumes, critically reviewed the present volume and provided me with invaluable editorial guidance. The reader should also recognize that in many cases, additional information on the work of individual scientists, often including a photograph, can be found in the companion volumes. I attempted inall these instances to include a reference to the other volumes. ix TCI Library: www.telephonecollectors.info X Engineering and Science in the· Bell System As I found out soon after starting my editorial task, it takes a lot of effort to convert drafts of manuscripts into a book. This task was greatly aided by the outstanding assistance of a number of people: D. Chappell not only entered the text into the UNIX* text processing system, but took it through what must have seemed to her to be interminable revisions. S. Lipton, R. L. Stumm, and C. Biczak did exacting, importanlt work on long lists of references. V. W. Hashizume, D. M. Solomon, and C. Biczak skillfully prepared all illustrations,
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