August 2012 August 2012 Vol. 26, No. 4 Vol. 26, No. 4 www.PhotonicsSociety.org www.PhotonicsSociety.org
Silicon Photonic Based Biosensors: The Future of Lab-on-a-Chip Diagnostic Devices by D. Duval, et al
Also inside: • Epitaxial Growth and Properties of InN Nanowires: Extending III-Nitride Semiconductors to Long- Wavelength Nanophotonic Devices on Si-Platform by Zetian Mi, et al. • Recognition at CLEO • Conference Previews of GFP, IPC and ECOC New Gen2 Product from the Leader in Polarization Control www.generalphotonics.comwww.generalphotonics.com HighHigh SpeedSpeed MultifunctionMultifunction PolarizationPolarization ControllerController ModelModel MPC-202MPC-202
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FEATURES
Research Highlights: ...... 5 – Silicon Photonic Based Biosensors: The Future of Lab-on-a-Chip Diagnostic Devices by D. Duval, et al...... 9 – Epitaxial Growth and Properties of InN Nanowires: Extending III-Nitride Semiconductors to Long-Wavelength Nanophotonic Devices on Si-Platform by Zetian Mi, et al.
6 Sensor Area News ...... 14 Modal Splitter • Recognition at CLEO 2012 Cladd • Call for Nominations: 2013 John Tyndall Award–Reminder Core • Call for Nominations: IEEE Photonics Society 2013 Young Investigator Award–Reminder
Bimodal • BoG Candidates 2013–2015 Single-Mode Waveguide Waveguide Careers and Awards ...... 15 • IEEE Photonics Society Awards Deadline
Membership ...... 16 • Benefits of IEEE Senior Membership 11 Mg-doped Conferences...... 17 • IPS Conference Calendar 9 mW • Group IV Photonics 2012 Preview
3 mW • Preview to the 2012 Annual Meeting PL Intensity • Optical MEMS & Nanophotonic Conference 2012 1 mW • Group IV Photonics 2012 0.1 mW • Avionics, Fiber-Optics and Photonics Conference 2012 • European Conference and Exhibition on Optical Communication 2012 0.54 0.60 0.66 0.72 0.78 Energy (eV) • IEEE Photonics 2012 Conference • International Semiconductor Laser Conference 2012 • Optical Interconnects Conference 2013 • IPS Conference Management • Forthcoming meetings with ICO Participation 2012 IPS Co-Sponsored Calendar 27 PLANNING A CONFERENCE? •
WE CAN HELP! Publications ...... 30 • Photonics Journal Flyer IEEE PHOTONICS SOCIETY CONFERENCES CAN • Call for Papers: PROVIDE THE SERVICES YOU NEED! – JSTQE: Nanoplasmonics – JSTQE: Semiconductor Lasers – JSTQE: Numerical Simulation of Optoelectronic Devices – JDT: Solid State Lighting – JDT: Green Technology
COLUMNS
Editor’s Column ...... 2 President’s Column ...... 3
August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 1 Editor’s IEEE Photonics Society Column HON TSANG President Newsletter Staff Hideo Kuwahara Executive Editor Fujitsu Laboratories The newsletter has developed over the years into sev- Hon K. Tsang 4-1-1, Kamikodanaka, Nakahara Department of Electronic Engineering eral distinct sections. The research highlights section Kawasaki, 211-8588, Japan The Chinese University of Hong Kong Tel: +81 44 754 2068 contains invited papers describing recent research from Shatin, Hong Kong Fax: +81 44 754 2580 Tel: +852 - 39438254 around the world, the careers and awards section covers Email: [email protected] Fax: +852 - 26035558 awards and news from members, the membership section Past President Email: [email protected] reports on the activities organized by local chapters of the James Coleman Dept of E & C Engineering Associate Editor of Asia photonics society, the conference section gives previews University of Illinois & Pacific of conferences and reports on news from recent confer- 208 N. Wright Street Christina Lim Urbana, IL 81801-2355 Department of Electrical & ences, and the publications section announces changes Tel: +217 333 2555 Electronic Engineering in the society publications (such as the recent change of Email: [email protected] The University of Melbourne VIC 3010 Australia the Photonics Journal to a fully open access journal with Secretrary-Treasurer Tel: +61-3-8344-4486 mandatory page charges) and announcements on special Dalma Novak Email: [email protected] Pharad, LLC issues of journals. 797 Cromwell Park Drive Associate Editor of Canada This month’s research highlights section has two Suite V Lawrence R. Chen Glen Burnie, MD 21061 Department of Electrical & papers with a silicon photonics theme. Prof Zetian Mi Tel: +410 590 3333 Computer Engineering describes work at McGill University on InN nanowire Email: [email protected] McConnell Engineering Building, Rm 633 heterostructures which can be grown with few defects for Executive Director Richard Linke McGill University possible device applications such as high speed photode- IEEE Photonics Society 3480 University St. tectors and lasers on a silicon platform. Prof. Laura Lech- 445 Hoes Lane Montreal, Quebec Piscataway, NJ 08854-1331 Canada H3A-2A7 euga reviews the recent work at Universitat Autònoma Tel: +1 732 562 3891 Tel: +514 398 1879 de Barcelona on optical biosensing and the development Fax: +1 732 562 8434 Fax: 514 398 3127 Email: [email protected] Email: [email protected] of a fully integrated lab-on-chip on a silicon platform. Board of Governors Associate Editor of Europe/ The conference section in this issue has short previews P. Andrekson A. Kirk Mid East/Africa of some of the upcoming IEEE Photonics Society’s flag- Y. Arakawa F. Koyama Kevin A. Williams S. Bigo J. McInerney Eindhoven University of Technology ship conferences including the Group Four Photonics J. Capmany L. Nelson Inter-University Research Institute Meeting held in San Diego at the end of August, and the M. Glick D. Novak COBRA on Communication P. Juodawlkis P. Smowton IEEE Photonics Conference held in Burlingame towards Technology Vice Presidents Department of Electrical the end of September. We also have a preview of ECOC Conferences - K. Choquette Engineering which returns to Amsterdam this September. The sum- Finance & Administration – C. Jagadish PO Box 513 Membership & Regional 5600 MB Eindhoven, mer months are usually the busiest time for conferences Activities – J. Kash The Netherlands and workshops and this year is no exception. The iNOW Publications – B. Tkach Email: [email protected] Technical Affairs – T. Koch (international Nano-Optoelectronics Workshop) meet- Staff Editor ing organized by Profs. Connie Chang-Hasnain, Jim Lisa Manteria IEEE Photonics Society Harris and Eli Yablonovitch in August is a good example 445 Hoes Lane of how the activities organized by IEEE Photonics soci- Piscataway, NJ 08854 Tel: 1 732 465 6662 ety members can develop as a major forum for researchers Fax: 1 732 981 1138 to meet and share ideas. Email: [email protected] Finally I would like to remind readers of this column IEEE prohibits discrimination, harassment, and bullying. For more information, visit http://www.ieee.org/web/aboutus/whatis/policies/p9-26.html. that they should feel free to contact myself or any from our team of editors if you wish to propose to write an IEEE Photonics Society News (USPS 014-023) is published bimonth- article for the newsletter. Prof. Christina Lim recently ly by the Photonics Society of the Institute of Electrical and (Australia) joined Profs Lawrence Chen (N. America) and Electronics Engineers, Inc., Corporate Office: 3 Park Avenue, 17th Floor, New York, NY 10017-2394. Printed in the USA. One dollar per Kevin Williams (Europe) and myself (Asia) as editors of member per year is included in the Society fee for each member the newsletter. We warmly welcome your feedback and of the Photonics Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Send address rely heavily on you to provide us with news of chapter changes to Photonics Society Newsletter, IEEE, 445 Hoes Lane, activities. Piscataway, NJ 08854. Hon Tsang Copyright © 2012 by IEEE: Permission to copy without fee all or part of any material without a copyright notice is granted pro- vided that the copies are not made or distributed for direct com- mercial advantage, and the title of the publication and its date appear on each copy. To copy material with a copyright notice requires specific permission. Please direct all inquiries or requests to IEEE Copyrights Office.
2 IEEE PHOTONICS SOCIETY NEWSLETTER August 2012 President’s Column HIDEO KUWAHARA
Photonics is still a Fertile Clara Valley Section with the Power Electronics Society, Elec- Field for Future Exploration tron Devices Society and Components, Packaging, and Manu- This year is the 50th anniversary of the semiconductor laser, and facturing Technology Society. we had a special symposium at CLEO2012 on this big techno- Illumination and display technologies are also big areas. logical milestone. Photonics technologies are rapidly progress- Current displays use SHG from 1060 nm quantum dot lasers ing and expanding. I would like to say, however, that photon- to obtain green laser light but if a highly-efficient direct green ics is still an emerging technology, especially compared with semiconductor laser could be developed, it would represent electronics. Younger generations that have grown up with ICT another important milestone. Various photonics sensor tech- gadgets in their daily lives, such as TVs, PCs, and smartphones nologies are being connected to the network and are becoming with many applications, might think photonics technologies effective in the areas of monitoring and authentication. One have already reached a level of maturity, but I think photonics example is the sensing of human palm vein patterns using technologies are only just beginning to play a vital role in our near-infrared light. This is a contact-less pattern recognition daily lives, and there is still much work remaining for the next technology, as opposed to the sensor contact required for fin- young generations of engineers over the next 50 years. ger print pattern recognition, and it has started to be installed The area of optical communications, for example, which has in application areas where hygiene is a sensitive issue, such as been a focus of our IEEE Photonics Society (IPS), still has many schools, where it can replace ID cards, and in bank ATMs in challenging issues that remain to be resolved. Future trunk lines lieu of personal identification numbers. This kind of technol- will need to have capacities of 400 Gb/s or even beyond 1Tb/s, ogy has the potential to extend into monitoring of healthcare but it does not appear easy to make straightforward upgrades in the future. Photonics technologies such as X-ray CT, ad- from the current polarization-multiplexed QPSK systems gen- vanced endoscopy, optical coherence tomography, and future erating 100 Gb/s to more sophisticated modulation schemes, biophotonics technologies are also driving medical progress. and other approaches will be needed with new ideas for comply- I think one of our duties is to show how bright a future ing with strict requirements for power consumption, footprint, photonics technology has and the forthcoming steps that will and so on. If we make an analogy to the human body, a trunk expand the contributions of photonics to daily life in the fu- optical communication system would be a kind of central ner- ture. If IPS can help to shine a light on the fertile potential of vous system, and access systems like PON may be peripheral photonics technologies, including possible industrial develop- nervous systems. The next target may be cranial nerves, i.e., ments on the horizon, we may attract excellent young students connections in computer data centers. We are now introducing and researchers into this technology area. optical interconnects to supercomputer systems, which entails big technological challenges, including new materials, such as Recent IPS Activities Si photonics and photonic crystals, and their integration. Up- IPS is promoting the globalization of its membership. The ra- graded from its previous iteration as a Workshop, the Optical tio of members from outside the US is increasing. As for the Interconnect Conference held in May 2012 in Santa Fe attracted IPS officers and Board of Governors, the selection of nominees nearly 180 attendees, more than double the attendance of pre- takes into consideration the importance of representation from vious years, and showed the enormous potential of this trend. different geographic regions, organization types (academic, in- Photovoltaics is another big technology area, and it is be- dustrial, and government), and areas of technical interest. The coming one of the major energy sources in the field of renew- IPS Vice President of Membership and Regional Activities has able energy, replacing fossil fuel and nuclear energy. According responsibility over the three Society regions (Europe, Middle to recent reports, the potential capability of solar cells far ex- East, and Africa; Americas; and Asia and Pacific) and appoints ceeds that of other renewable energies, such as hydroelectricity, Associate Vice Presidents for Regional Activities in each re- wind power, and tidal electric power generations. In several gion with the advice and consent of the Board of Governors. countries, government regulations are also starting to support The name recognition of IPS is still not as high as we would widespread adoption of photovoltaic technology. Solar power like. People still often refer to us by our former name, LEOS. energy generation is, of course, effective in attenuating climate We are preparing to strengthen our presence in various media. change. Originally the temperature of the earth was kept in an One of the activities is preparing an IPS brochure, which you can equilibrium that balanced incoming energy from solar radia- find on our website, and which describes our mission statement, tion with outgoing energy from the earth by thermal radiation. various benefits, and related conferences and publications. We are The electric energy generated by fossil fuel represents the re- planning to distribute this new brochure at major events, such as lease of energy accumulated in the earth over many millions of relevant international conferences. If you have comments on the years, and is destroying the thermal equilibrium, hence caus- brochure, please contact us. ing global warming, in addition to greenhouse gas effects. IPS As I described in this column in our June Newsletter, our has started a new joint Chapter in Photovoltaics in the Santa Photonics Journal is shifting to open access. This will be the first
August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 3 open access journal in the IEEE. Beginning July 1st, only OA sub- missions are considered, and all IEEE/OSA JOURNAL OF past articles will become open ac- cess in January 2013. The average time from paper submission to publication in the Photonics Jour- nal is 6 weeks, which makes PJ the fastest archival publication in the entire IEEE. IPS is sending several repre- Technology sentatives to IEEE-wide activities. Newly assigned members are: Prof Hatice Altug for IEEE Women in Engineering, Prof John McInerney New issue every 2 weeks for IEEE Region 8, Prof. Xiuling WhyWhy PublisPublishsh in JLTJLT?T? sss Li and Dr. Gregory Magel for IEEE LightwaveRapid online posting s 2EPUTATION FOR EXCELLENCE AND TIMELINESSs 2EPU TATI ON FOR EXCELLENCE AND TIMELINESSX LL D TI Nanotechnology Council, and Dr. s (IGH YEAR JOURNAL IMPACT FACTOR OF s (IGHGYJG YEARY JOURJ RNNAL IMPACTP FACTOR OF within two weeks of acceptance Henry Kressel for the IEEE His- s !UTHOR FRIENDLY PROCESS sss tory Committee. We would like to s %ASY TO USE SECURE ONLINE SUBMISSION SITEs %ASYY TO USE SECURE ONLINE Special Issues! extend our sincere thanks to them s (IGH QUALITY PEER REVIEWG Q YP for volunteering their time for s %XCELLENT SUPPORT PROVIDED BY DEDICATED )%%% STAFFPP P Y s %XPANDED CONFERENCE PAPER SUBMISSIONS WELCOME these important activities. IEEE/OSA JLT As you may already know, Easy-to-Use Authors’ Tools welcomes original advances related to state-of-the-art Prof. James Coleman, our Past- s 2EFERENCE VALIDATION capabilities in the theory, President, has been elected as a design, fabrication, application, s 'RAPHICS #HECKER performance, packaging and member of the National Academy reliability of: Plus: of Engineering. This honor is in s ,ASERS AND OPTICAL DEVICES recognition of his long and deep s &2%% FOR AUTHORS.O MANDATORY PUBLICATION FEESYP s &IBER CABLE AND s &2%% POSTING OF MULTIMEDIA LINKS COLOR IMAGESPG WAVELENGTH TECHNOLOGIES contributions to this area, and we s 0OSTED ARCHIVED IN )%%%% Xploree® s 3YSTEMS SUBSYSTEMS are also proud of his appointment. SENSORS AND DETECTORS Jim, congratulations, indeed! About IEEE Xplorep e®: s /NE OF THE MOST WIDELY USED ENGINEERING /NE OF THE MOST WIDELY U Contact us: RESOURCES IN THE WORLDESOU CES E WO D [email protected] s $ELIVERS OVER MILLION ARTICLES AND PAPERS $ELIVERS OVER With warm wishes, WORLDWIDE Hideo Kuwahara http://mc.manuscriptcentral.com/jlt-ieee Fellow Fujitsu Laboratories Ltd.
“Nick” Cartoon Series by Christopher Doerr
4 IEEE PHOTONICS SOCIETY NEWSLETTER August 2012 Research Highlights Silicon Photonic Based Biosensors: The Future of Lab-on-a-Chip Diagnostic Devices D. Duval, A. B. González-Guerrero and L. M. Lechuga Nanobiosensors and Bioanalytical Applications Group. Research Centre on Nanoscience and Nanotechnology (CIN2), CSIC and CIBER-BBN, Campus UAB, Barcelona, Spain
1. Introduction: State-of-the Art in setting, losing the main advantages of portability and ease of Lab-on-a-Chip Platforms use. Incorporation of the “on-chip” detection by using photon- The dream of having a device in the palm of our hand able to ic biosensors is a new technology that shows great promise [1]. deliver instant diagnostics of our health status could become a reality very soon. Silicon photonic biosensors have revealed 2. Towards a Real Portable LOC Device themselves as the most promising candidates for achieving The major challenge in the photonic biosensor field is to truly point-of-care devices for healthcare diagnostics to be achieve such a fully operative LOC platform with on-chip de- employed in any place and any time in a user friendly way. tection. For the development of a complete photonic LOC de- Advantages as miniaturization, clinically-relevant sensitivity, vice, several units must be incorporated on the same platform: robustness, reliability, potential for multiplexing and mass (i) the photonic sensors, (ii) the flow cells and the flow delivery production at low cost can be offered by these silicon pho- system (iii) the light sources and photodetector array or minia- tonics-based biosensors, opening the door to a general access turized CCD cameras (iv) a robust biofunctionalization proto- to acute diagnostics in developing countries [1]. This dream col for the biological receptors (v) processing electronics and, strongly drives the research done by the Nanobiosensors and (vi) final packaging with the required firmware and software. Bioanalytical Applications Group at the Research Centre on Even if the individual components are well known, the sub- Nanoscience and Nanotechnology (CIN2-CSIC) in Barcelona system interfaces between them are difficult to optimize and (Spain), a highly interdisciplinary and motivated group, which these are still the major barriers to be overcome. The design, fab- is developing point-of-care devices based on a novel interfero- rication and, mainly, the integration of the different units in one metric configuration using silicon photonics. The research single LOC platform is still a challenge, as is the demonstration activities of the Group range from the basic research to the of a multiplexed diagnostic detection. Proof of this is the recent technological implementation of the devices, as the Group has announcement from the prestigious X Prize Foundation and a wide experience in the technological transfer of their devices Qualcomm Foundation of the X PRIZE : a $10 million prize and know-how in commercial products through the creation of to the first research team worldwide able to develop a mobile several spin-off companies. lab-on-chip sensor solution capable of diagnosing 15 diseases Nowadays, most diagnostic techniques are based on time- in patients better than or equal to a board of certified physi- consuming, expensive, and specialized techniques performed cians. This is a reflection of the intense activity which is taking by trained technicians at the laboratory level. These techniques place in the field, with many research groups in academia and typically require labeling of the samples or reagents with fluo- industry working on the development of fully-consistent LOC rescent or radioactive markers. Ongoing changes in medical solutions for clinical diagnostics. Companies such as Corning, care are demanding novel technological diagnostic tools that General Electric, or Genanalyte have a photonic biosensing could enable quick, accurate, reliable and cost-effective results technology in the market, but none of them has been able to so that appropriate treatments can be implemented in time, offer a miniaturized and portable LOC platform so far. leading to improved clinical outcome. It is clear that the ap- Figure 1 shows a scheme of the LOC platform we envisioned plication of a portable, easy-to-use and highly sensitive lab- as our main objective. Noticeably, we have implemented a first on-a-chip (LOC) platform for real-time diagnosis could offer POC laboratory prototype using nanophotonic silicon sensors significant advantages over current methods. The main appli- which allow the label-free detection of biomolecular interac- cations for this technology will be in clinical diagnostics, but tions with extreme sensitivity [2]. Most relevant, we have re- the technology will be beneficial in diverse fields, including cently demonstrated its ability to directly detect human hor- environmental monitoring, chemical and biological warfare mones at physiological levels (below 8 pg/ml) or Pseudomonas surveillance, the food industry and veterinary and industrial Aureginosa microorganisms (at few cfu/ml) through the immu- process control, among others. But despite remarkable prog- nointeraction with their specific antibodies. ress towards LOC assay systems as seen in the scientific lit- erature, very few complete working prototypes have emerged 3. The Sensor Chip: Integrated in the market. The reason is that most of the LOC technology Interferometric Transducers does not incorporate the “on-chip” detection and the read-out On account of the scalable fabrication and relevant sensitivities must be done with complex instrumentation in a laboratory for biomolecular sensing, chip-integrated waveguide structures
August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 5 waveguide supporting a single transversal mode. After some distance, this mode is Surface Biofunctionalization coupled into a thicker waveguide which contains the sensing window and sup- Sample Extraction ports two transversal modes. As the fun- Integrated MicroFluidics damental and the first order modes have Optical Readout (PD) different evanescent field profiles at the core-cladding interface, the interference pattern is function of the refractive index in the sensing area (see Fig. 2 for details). Grating Couplers We employ dielectric waveguides (Si3N4) as core waveguides for the BiMW devic- Array of Interferometric es. The final layout design included doz- Sensors ens of chip-integrated waveguides into a Electronics Signal Modulation CMOS Chip single wafer substrate using silicon wave- (All Optical Modulation Principle) guide technology (Si/SiO2/Si3N4/SiO2). The single mode part is 150 nm thick
Figure 1. Scheme of our envisioned LOC platform based on nanophotonic sensors Si3N4 (n = 2.00) and the bimodal part is 350 nm thick. The ridge height is only 2 in an interferometric configuration are promising detection el- nm. The device is designed for operation at visible wavelengths ements for lab-on-a-chip applications. However, an important with monochromatic and polarized (TE or TM) light. drawback of interferometric sensors comes from the periodic na- The simplicity of the design of the bimodal waveguide in- ture of the output signal which can give rise to wrong or ambigu- terferometers is quite attractive while its sensitivity is com- ous interpretations. This problem can be solved by implementing parable to more complex interferometric schemes: we have a phase modulation system based, for instance, on electro-optical demonstrated a detection limit of 2.5 # 10–7 RIU in bulk or acousto-optical working principles. Unfortunately, these tech- [3] as well as high selectivity and reliability for specific im- niques generally involve materials which are non-standard for munosensing with extremely low detection limit (pM level). CMOS and rely on complex read-out equipment which clearly Moreover, the small foot print of the BiMW device allows impedes their integration into a LOC platform. Another draw- the integration of a large amount of sensing elements within back is the Y divisor employed to split or recombine light in a single chip which is of importance for the development of standard interferometric configurations (Mach-Zehnder or Young multiplexed biosensors and for lowering the production costs. interferometers), a critical process in order to obtain highly coher- Figure 3 shows a photograph of one of the sensor chips. ent devices. The key to translating these sensors from academic to viable laboratory tools lies in the design of robust sensor ar- 3.1. Novel All-Optical Phase Modulation System chitectures and interrogation instrumentation that facilitates the One of the main problems when dealing with interferometric integration of cutting edge optics into easily used lab-on-a-chip devices is related to the complex read-out of the periodic output formats. Thus, our approach based on optimized nanophotonic signal that can give false positive responses. To solve these limi- waveguides in a novel and simpler interferometric configuration tations, we recently developed an innovative phase modulation with an all-optical modulation system improves the current sys- tems best-in-class performance for label-free biosensing. 1cm Our innovative strategy is a bimodal waveguide (BiMW) interferometer [3], a single channel waveguide interferometer exploiting the interference of two waveguide modes of the same polarization (fig. 2). Visible light is first coupled into a rib 3 cm
Sensor Area Modal Splitter Cladd Core
Bimodal Waveguide Single-Mode 16 BiMW Waveguide Figure 3. Photograph of a 30 # 10 mm2 chip containing 16 Figure 2. Scheme of the BiMW interferometric biosensor. BiMW interferometers.
6 IEEE PHOTONICS SOCIETY NEWSLETTER August 2012 system where the required phase change λ SensingSensing ArmArm Δϕ is introduced by tuning the input wave- 0 length of a commercial Fabry-Perot laser diode (Fig. 4). This all-optical approach presents clear advantages as compared to the conventional modulation systems as MMonochromaticonochromatic neither additional equipment nor electri- LightLight Source cal contacts are required, making it fully Reference Arm Interferometric Readout compatible with the microfluidics for the (a) final LOC device [4]. This modulation scheme has been applied to the BiMW Δλ sensors [2], providing a direct and unam- Δϕ biguous phase read-out without affecting FFT the transducer sensitivity: a limit of detec- Wavelength tion (LOD) of 4.2 # 10–7 RIU in a wave- Linear Phase Readout Modulated Input length modulated BiMW sensor is easily Δϕ achieved. (b)
3.2. Light Coupling by Figure 4. Comparison between (a) the standard interferometer detection scheme and Nanogratings (b) the wavelength modulated interferometer detection scheme. The way to couple light into each one of the waveguide sensors is a critical aspect for the final LOC platform: an efficient coupling increases the power of the out- put signal which affects the sensitivity of the device through the signal-to-noise ratio. It is also an important parameter for further integration and miniaturization. To achieve a user-friendly LOC platform, diffraction gratings seem to be the best candidates for in-coupling as they may allow bet- ter integration and stability than the standard end-fire or prism coupling methods. Due to the dimensions of our in- terferometers (a few microns in width and with a nanomet- (c) ric rib) and to the operating wavelength (m = 600–700 nm), the diffractive grating length cannot exceed 100 μm with a sub-micron period. The gratings are directly written onto (b) each of the Si3N4 waveguides (Fig. 5c) by electron beam li- (a) thography with periods between 400 and 450 nm and a depth Figure 5. (a) Photograph of the experimental set-up, (b) photo- of 40 nm. Fig. 5a shows the set-up with a fiber pigtailed laser graph of a chip highlighting the excited grating and the light diode placed above the chip at the grating excitation angle. propagating in the waveguide and (c) SEM image of a 400 nm- Coupling efficiency as high as 12% has been achieved so far, period grating coupler. similar to the one obtained by other methods. (Fig. 6). The microfluidic system is employed for the in-situ 3.3. Microfluidics and Final Packaging immobilization of the bioreceptors in each sensing area and for Another key issue in the development of a LOC device is the the evaluation of real patient samples. way to bring the patient sample in contact with the sensing Our expertise in biofunctionalization protocols will help area. The volume of the sample and the flow rate are critical in implementing specific and resistant bioreceptor layers for parameters, especially for clinical testing, where it is extreme- the evaluation of increasingly complex patient samples such ly important to reduce the sample volume. In collaboration as urine, serum, blood, tears, cerebrospinal fluid or saliva. The with the GEMM-I3A group from the University of Zaragoza final system integration will include the assembly of a proto- (Spain), we have specifically implemented a microfabrication type instrument which incorporates all of the individual com- technique at the wafer-level able to create a 3D microfluidic ponents described above, plus commercial lasers, control elec- network in the SU-8 biocompatible polymer on our interfer- tronics & software, user interface software, etc. The strategy ometer wafer [5]. 3D microchannels are obtained and vertical will enable an easy and reliable exchange of biochips into the channel sidewalls are ensured with channels of 20 μm in height LOC instrument. The final device is targeted to be employed and 50 to 150 μm in width. The advantages of this full wafer by end-users independently of their expertise. approach are the large alignment tolerance during fabrication and the compatibility with the biofunctionalization proto- 4. Summary cols. The external microfluidic connection is done by stan- We are working on the realization of a sensitive, affordable, dard fluidic connectors and O-rings, ensuring a perfect sealing hand-held and portable device for point of care diagnosis. The
August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 7 (a) (b) (c)
Figure 6. Photographs of the wafer containing the microfluidic channels, a detail of some of the channels and the final encapsulation of the microfluidic network integrated on a BiMW chip. lab-on-chip device includes ultrasensitive interferometric bio- (Barcelona, Spain). Her research interests are focused on the de- sensors based on integrated silicon-based optical waveguides velopment of biosensors based on integrated optics and on their which have already shown their ability to directly detect min- implementation into complete lab-on-a-chip platform. = –7 ute variations in the refractive index (Δnmin 10 ) and label- free biosensing detection at the pM level. Light in-coupling Ana B. González received a M. Sc. into the sensor waveguides is achieved by diffraction gratings degree in chemistry from the Univer- couplers fabricated by electron-beam on top of the rib wave- sity Autonomus of Barcelona (Spain) in guides. Hermetic sealed microfluidics is achieved by using a 2007. She currently holds a PhD posi- polymer cartridge. Multiplexed excitation and read-out of all tion at the Nanobiosensors and Bio- the sensors within a single chip will complete the platform. analytical applications Group at the There is no doubt that LOC platforms based on interferometric Research Center on Nanoscience and photonic biosensors will be soon available in the market. Nanotechnology (CIN2), CSIC (Barce- lona, Spain). Her research interests are focused on the im- Author Information plementation of silicon photonics biosensors and their use Laura M. Lechuga received the Ph.D. in for clinical applications. chemistry by the University Complutense of Madrid in 1992. Since 1995 she holds Acknowledgements a permanent position at the Spanish Na- The authors acknowledge the financial support from M. Botín tional Research Council (CSIC) and a Full Foundation. Professor position since 2007. She is head- ing the Nanobiosensors and Bioanalyti- References cal Applications Group at the Centre for 1. M. C. Estevez, M. Alvarez, and L. M. Lechuga, “In- Nanoscience and Nanotechnology (CIN2, CSIC) in Barcelona tegrated optical devices for lab-on-a-chip biosens- (Spain). Previously, she was working at the University of Cádiz ing applications”, Laser Photonics Rev., DOI: 10.1002/ (Spain), at the MESA Research Institute (The Netherlands) and lpor.201100025, 2011. at the National Microelectronics Centre (CSIC, Madrid, Spain). 2. D. Duval, A. B. González-Guerrero, S. Dante et al., Her main research interests are the development of biosensor de- “Nanophotonic lab-on-a-chip platforms including novel vices based on plasmonics, magnetoplasmonics, silicon photonics bimodal interferometers, microfluidics and grating cou- and nanomechanics principles, including surface biofunction- plers”, Lab Chip, 12, 1987–1944, 2012. alization, microfluidics and lab-on-a-chip integration and their application in diagnostics. She has eight families of patents and 3. K. E. Zinoviev, A. B. González-Guerrero, C. Domínguez has been the driving force for the establishment of one spin-off et al., “Integrated Bimodal Waveguide Interferometric company in 2004 (SENSIA, SL) and co-founder of a new spin-off Biosensor for Label-Free Analysis”, J. Lightwave Technol., in 2010 (BIOD, SL). vol. 29 (13), pp. 1926–1930, 2011. 4. S. Dante, D. Duval, B. Sepúlveda et al., “All-optical phase Daphné Duval received a PhD degree on modulation for integrated interferometric biosensors”, integrated optics from the University of Opt. Express, vol. 20 (7), pp. 7195–7205, 2012. Rennes 1 (France) in 2010. She currently holds a post-doctoral position at the Nano- 5. F. J. Blanco, M. Agirregabiria, J. Berganzo et al., “Micro- biosensors and Bioanalytical applications fluidic-optical integrated CMOS compatible devices for Group at the Research Center on Nanosci- label-free biochemical sensing”, J. Micromech. Microeng., ence and Nanotechnology (CIN2), CSIC vol. 16 (5), pp. 1006–1016, 2006.
8 IEEE Photonics Society NEWSLETTER August 2012 Research Highlights Epitaxial Growth and Properties of InN Nanowires: Extending III-Nitride Semiconductors to Long-Wavelength Nanophotonic Devices on Si-Platform Zetian Mi and Songrui Zhao
Abstract—InN, with a narrow energy bandgap of +0.65 eV, are generally donor-like. The currently reported InN is typical- is emerging as a new class of building blocks for nanophotonic ly n-type degenerate even for nominally undoped structures.4–8 devices in the telecommunication wavelength range. In this The grown surfaces of InN are also characterized by problemat- article we describe the recent advances of InN nanowire het- ic, uncontrollable surface electron accumulation, the origins of erostructures on Si-platform, including the epitaxial growth which have remained a subject of intense debate.4,9 The lack of of intrinsic InN nanowires, the tuning of their surface charge intrinsic InN, the uncontrolled surface charge properties, and properties, as well as the realization of InN/InGaN core/shell the difficulty in realizing p-type conductivity has been recog- nanowires on Si substrate. Such device-worthy nanowire het- nized as the major obstacles for the practical applications of erostructures will extend III-nitride semiconductors to long- III-nitride semiconductors in the near-infrared spectral range. wavelength integrated nanophotonics on Si-platform, which By virtue of the effective lateral stress relaxation, nearly is critical for future ultrahigh-speed chip-level optical com- defect-free nanowire heterostructures can be monolithically munications. grown on Si-platform,10,11 rendering them as highly promising Index Terms—InN, nanowires, nanophotonics, Si building blocks for high performance nanophotonic devices on photonics Si.12,13 Additionally, the use of nanowires provides an effective approach to scale down the dimensions of future devices and Introduction systems. It can also significantly enhance the operation band- The discovery of InN bandgap at +0.65 eV has kindled world- width of nanophotonic devices, due to the greatly reduced wide research interests in III-nitride based infrared photon- parasitic capacitance and carrier transient time. ics.1 It extends the bandgap of III-nitride semiconductor fam- In this paper, we describe the recent advances of InN nanow- ily from the ultraviolet (+0.2 μm for AlN and +0.36 μm for ire heterostructures on Si-platform, including the catalyst-free GaN) to the near-infrared (+1.9 μm for InN). III-nitride semi- growth of intrinsic InN nanowires, the precise control over the conductors also possess excellent optical and charge transport surface charge properties, and the demonstration of InN/In- properties for applications in ultrahigh-speed nanophotonic GaN core/shell nanowires. These studies have addressed some devices. For example, InN exhibits a very large absorption co- of the long-term debates on the fundamental properties of InN efficient ($2 # 104 cm-1) in the fibre-optical communication and, more importantly, they have paved the way for the ra- wavelength range,1,2 which, in conjunction with its very small tional “materials-by-design” development of silicon integrated effective mass, large electron mobility, as well as extremely InN-based device technology in nanoscale, such as ultrahigh- high carrier saturation velocity (2 # 108 cm/s),2 renders itself speed nanoscale lasers and photodetectors, next generation so- an excellent candidate for ultrahigh-speed, high responsivity lar cells, light emitting diodes, and high mobility transistors. photodetectors. To date, however, InN-based devices in the near-infrared spectral range have remained largely unexplored, Epitaxial Growth of Intrinsic InN Nanowires which is in direct contrast to the relatively mature GaN-based InN nanowires can be grown via the vapor-solid-liquid meth- devices, such as light emitting diodes (LEDs) and lasers that od, the spontaneous formation under nitrogen-rich conditions, have transformed the solid state lighting technology. This or on nano-patterned substrates.14,15 However, these conven- has been primarily limited by the difficulty in achieving high tional growth processes generally yield InN nanowires with quality InN, due to the lack of suitable substrates. In addition, severely tapered morphology. Such nanowire structures are InN has the lowest conduction band minimum of any reported characterized by the presence of extremely large residual elec- semiconductor3 and, as a consequence, defects and impurities tron densities (+1 # 1018 cm–3, or higher) even for nominally undoped samples. The resulting poor electrical and optical properties severely limit their device applications. In this re- 1 Manuscript received May 15, 2012. This work was supported by the Natural Sciences and Engineering Research Council of Canada, Fonds de recherché sur gard, we have developed a special growth technique, with the la nature et les technologies, Canada Foundation for Innovation, US Army use of an in-situ deposited In seeding layer, and have achieved Research Office, and McGill University. non-tapered, nearly homogeneous, and electronically pure InN Zetian Mi is with Department of Electrical and Computer Engineering, nanowire structures on Si substrate.11 McGill University, 3480 University Street, Montreal, Canada H3A 2A7 The InN nanowires are grown on Si (111) substrates by (phone: 1-514-398-7114; e-mail: [email protected]). Songrui Zhao is with Department of Electrical and Computer Engineering, a Veeco Gen-II radio frequency plasma-assisted molecular McGill University, 3480 University Street, Montreal, Canada H3A 2A7. beam epitaxial growth system under nitrogen-rich condition.
August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 9 10 K
Intrinsic 500 nm ~9 meV PL Intensity
(a) 0.60 0.63 0.66 0.69 0.72 0.75 Energy (eV) (b)
Figure 1. (a) SEM image of non-tapered InN nanowires on Si (111). The image is taken with a 45-degree angle. (b) Photoluminescence spectrum of intrinsic InN nanowires measured at 10 K. The very narrow linewidth suggests the nanowires have extremely low re- sidual electron densities.16
Compared to the conventional growth process where indium studies further confirm that such non-tapered nanowires are and nitrogen species are introduced on the substrate surface si- nearly free of structural defects (i.e. dislocations and stacking multaneously, our novel approach involves the deposition of a faults),11 thereby minimizing any unintentional n-type doping thin (+0.6 nm) In seeding layer prior to growth initiation. The due to defects. thin In layer forms nanoscale droplets at high temperatures, Such non-tapered InN nanowires exhibit superior optical which can promote the subsequent formation and nucleation properties. Illustrated in Figure 1(b), their photolumines- of InN nanowires. The presence of well-defined nucleation cen- cence linewidth is +9 meV at 10 K, which is nearly a factor ters, in conjunction with optimized growth conditions, enables of 5 to 10 times narrower than the commonly reported values the formation of non-tapered InN nanowires directly on Si. for the conventional tapered InN nanowires.6, 7 The narrow Figure 1(a) shows the scanning electron microscopy (SEM) im- spectral linewidth is a direct reflection of the extremely low age of such InN nanowires, which exhibit a well-defined, near- residual electron densities of the nanowires. From detailed perfect hexagonal structure. The nanowires are oriented along photoluminescence studies, the residual electron densities the [0001] polar direction (c-axis), with their sidewalls being are derived to be the in the range of +4 # 1015 cm–3,16 or non-polar m-planes. Detailed transmission electron microscopy less, which is two to three orders of magnitude smaller than
3d 1s s/2 Ev EF
0.950.95 ± 0.0.10 1 eVeV
460 445050 4 40000 390
E Intensity (a.u.) Intensity (a.u.) v EF 0.50.5 ± 0.10.0 1 eVeV
IIntrinsicntrinsic Si-doSi-dopedped
5 432 1 0 –1 5 43210–1 Binding Energy (eV) Binding Energy (eV) (a) (b)
Figure 2. Angle-resolved XPS spectra16 of (a) intrinsic and (b) Si-doped InN nanowires. The spectra are measured from the lateral surfaces (m-plane) of [0001]-oriented InN nanowires. The inset of (a) shows the spectra of In-3d5/2 and N-1s orbitals measured from the lateral surfaces, suggesting the absence of In-O related bonds.
10 IEEE PHOTONICS SOCIETY NEWSLETTER August 2012 any previously reported values for InN nanowires.6,7 Such catalyst-free method. The photoluminescence properties low residual free electron density essentially indicates the of such nanowires are investigated. Illustrated in Figure 3, achievement of intrinsic InN,16 which provides the prerequi- under relatively low excitation conditions, the photolumi- site for precisely tuning the electrical and optical properties nescence emission measured at +6 K is dominated by a low of InN nanowire structures required for practical nanoscale energy peak at +0.6 eV, which is ascribed to Mg-dopant as- device applications. sociated acceptor energy level(s) transition. With increasing pumping power, the band-to-band transition becomes ap- InN Nanowires with Controlled preciably more important, due to the saturation of acceptor Surface Charge Properties energy level(s). The energy separation between the two peaks To date, precise control over nanowire doping and the surface is +60 meV, which is consistent with the Mg acceptor activa- charge properties has remained a near-universal material chal- tion energy in InN epi-layers in previous reports.19 Various lenge. The achievement of intrinsic InN nanowires enables us to electrical methods are currently being explored to confirm unveil, for the first time, the fundamental surface charge proper- p-type conductivity in InN nanowires. ties of InN nanowires, which are investigated directly by the an- gle-resolved X-ray photoelectron spectroscopy (XPS). Illustrated InN/InGaN Core-Shell in Figure 2(a) is the measurement of the near-surface Fermi-level Nanowire Heterostructures
(EF) relative to the position of the valence band maximum (VBM). To achieve high efficiency InN-based nanowire LEDs, lasers,
It can be seen that EF lies at +0.5 eV above the VBM, suggesting solar cells, and photodetectors, it is essential to develop InN/ the minimal downward band bending and the absence, or a neg- InGaN core-shell nanowire heterostructures that can provide ligible level of of electron accumulation on the sidewalls of InN effective carrier confinement and bandgap engineering. The nanowires. The highly symmetric In-3d5/2 and N-1s XPS spectra, recently demonstrated InN/InGaN core-shell nanowire struc- shown in the inset of Figure 2(a), further suggest the negligible tures are illustrated in Figure 4(a),20 wherein the InN nanow- levels of impurity bondings (such as In-O, N-H or N-C) associ- ires are covered by an InGaN shell on the side-wall and top ated with the surface electron accumulation. This is the first dem- regions. Such core/shell nanowire structures are achieved by onstration that the surface two-dimensional electron gas (2DEG) depositing InGaN on InN nanowire template at a slightly formation and EF pinning is absent at the non-polar grown sur- higher substrate temperature of +500 °C, which can enhance faces of any InN structure since this prediction was made by Van the surface diffusion of Ga adatoms. The elemental map for de Walle et al. in 2007,17 which is in direct contrast to the prob- In derived from the energy dispersive X-ray spectrometry lematic 2DEG formation universally observed at the grown sur- (EDXS) analysis of an individual InN/InGaN nanowire het- faces of n-type degenerate InN. With this demonstration we have erostructure is shown in Figure 4(b). The color-coded map discovered that the commonly measured large surface electron (inset) with the In in green and the Ga in red confirms that accumulation and Fermi-level pinning at the non-polar grown the Ga distribution is on the periphery of the nanowire, which surfaces is not a fundamental property of InN. provides a direct evidence for the core-shell configuration. Significantly, we have also demonstrated that the surface charge properties of InN nanowires can be tuned by controlled n-type doping. This is evidenced by the XPS experiments on the Si-doped InN nanowires with an average doping concen- 17 –3 Mg-doped tration of +5 # 10 cm . As can be seen from Figure 2(b), EF lies +0.95 eV above the VBM. Given a bandgap of +0.65 eV at room temperature, the EF of Si-doped InN nanowires is located at +0.3 eV above the CBM. This indicates the pres- ence of a high-density 2DEG (>6 # 1012 cm–2),16 which is significantly larger than the bulk doping concentration. This 9 mW observation is similar to the commonly reported 2DEG that forms at the surfaces of unintentionally n-type doped InN 3 mW nanowires and thin films; here, however, it was obtained by PL Intensity the controlled Si-doping. The tuning of surface charge prop- erties is well captured by the effective mass and ab-initio cal- 1 mW culations, which is closely related to the dopant surface seg- regation; details can be referred to Ref. 16. 0.1 mW InN:Mg Nanowires Due to the presence of surface electron accumulation, the realization of p-type conductivity in InN has remained an 0.54 0.60 0.66 0.72 0.78 elusive goal.18 With the achievement of intrinsic InN nanow- Energy (eV) ires, both within the bulk and at the grown surfaces, it is possible to obtain p-doped InN nanowires. InN:Mg nanow- Figure 3. Power dependent Photoluminescence spectra of Mg- ires are grown on Si (111) substrate using the afore-described doped InN nano wires measured at 6 K.
August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 11 therefore believed that this research will trigger a worldwide research thrust into the area of InN-based infrared nanopho- tonic and ultrahigh-speed electronic devices on Si-platform for the emerging chip-level optical communications and ul- trahigh sensitive biosensors.
Biography Zetian Mi is an Associate Professor in the Department of Elec- trical and Computer Engineering at McGill University. He received the Ph.D. degree in Applied Physics from the Univer- μ 1 m sity of Michigan in 2006. His teaching and research interests are in the areas of III-nitride semiconductors, low dimensional (a) nanostructures, molecular beam epitaxy, and nanophoton- ics. He has received the Hydro-Quebec Nano-Engineering Scholar Award in 2009, the William Dawson Scholar Award in 2011, and the Christophe Pierre Award for Research Excel- lence ( Early Career) in 2012 at McGill University. He has also received the Young Investigator Award from the 27th North American Molecular Beam Epitaxy Conference in 2010. Prof. Mi currently serves as the Associate Editor of IEEE Journal of Lightwave Technology. Songrui Zhao is a Ph.D. candidate in the Department of Electrical and Computer Engineering at McGill University. His current research interests are molecular beam epitaxial 100 nm growth of III-nitride semiconductor nanowires, heterostruc- tures, and their electrical and optical properties, as well as the (b) related nanoelectronic and nanophotonic device applications.
Figure 4. (a) SEM image taken with a 45-degree angle, showing the References morphology and orientation of the InN/InGaN nanowires grown 1. J. Wu, Journal of Applied Physics 106, 011101 (2009). on Si (111) substrate. (b) In map derived from the EDXS analysis 2. W. Walukiewicz et al., Journal of Physics D: Applied of an individual InN/InGaN nanowire heterostructure. The color- Physics 39, R83 (2006). coded map (inset) with the In in green and the Ga in red shows 3. C. G. Van de Walle and J. Neugebauer, Nature 423, 626 that the Ga distribution is on the periphery of the nanowire. (2003). The InGaN shell is expected to provide superior carrier 4. I. Mahboob et al., Physical Review B 69, 201307(r) confinement for the InN core. A record internal quantum effi- (2004). ciency of +62% is measured from such nanowire heterostruc- 5. F. Werner et al., Nano letters 9, 1567 (2009). tures at room temperature. The use of such unique radial core/ 6. T. Stoica et al., Nano letters 6, 1541 (2006). shell nanowire heterostructures for various device applications 7. J. Segura-Ruiz et al., Physical Review B 82 (2010). is being investigated. 8. T. Richter et al., Nanotechnology 20, 405206 (2009). 9. C.-L. Wu et al., Physical Review Letters 101 (2008). Conclusion and Future Work 10. W. Lu and C. M. Lieber, Journal of Physics D: Applied With dramatically improved epitaxial growth process, we Physics 39, R387 (2006). have demonstrated that InN nanowire heterostructures grown 11. Y. L. Chang et al., Nanotechnology 20, 345203 (2009). directly on Si substrate can exhibit well-controlled structural, 12. Y. Huang, X. Duan, and C. M. Lieber, Small 1, 142 electrical and optical properties. The realization of intrinsic (2005). InN, tunable surface charge properties, and InN/InGaN core/ 13. R. Chen et al., Nature photonics 5, 170 (2011). shell structures has addressed some of the major roadblocks 14. C. H. Liang et al., Applied Physics Letters 81, 22 (2002). for their emerging device applications. Some of the immediate 15. E. Calleja et al., Pphysica Status Solidi (b) 244, 2816 applications of such InN nanowire structures include ultra- (2007). high-speed nanoscale lasers and photodetectors. Meanwhile, 16. S. Zhao et al., Nano Lett,12, 2877(2012). they can also function as the sub-cell of InGaN-based multi- 17. C. G. Van de Walle and D. Segev, Journal of Applied junction, full-solar-spectrum photovoltaic devices. Addition- Physics 101, 081704 (2007). ally, the tunable surface charge properties of InN nanowires 18. A. Yoshikawa et al., Physica Status Solidi (a) 207, 1011 can be exploited to realize ultrahigh-sensitive nanoscale bi- (2010). osensors. It may also be noted that the growth temperature 19. X. Wang et al., Applied Physics Letters 90, 201913 of InN is generally in the range of +400–500 °C, which is (2007). compatible with or below the CMOS thermal budget. It is 20. K. Cui et al., Nanotechnology 23, 085205 (2012).
12 IEEE PHOTONICS SOCIETY NEWSLETTER August 2012
News
Recognition at CLEO 2012
The Conference on Lasers and Electro-Optics (CLEO) was held from 6–11 May, 2012 at the San Jose Convention Center, San Jose, California, USA. IPS President, Hideo Kuwahara presented plaques for recognition to Photonics Society members who have been elevated to the grade of IEEE Fellow.
(From left to right) Hideo Kuwahara (Photonics Society President), Din Ping Tsai, Barry Shoop, Ci-Ling Pan, Brian Kolner, Mario Marconi.
Call for Nominations – Reminder 2013 John Tyndall Award fibers and cables, the optical components employed in fi- Nominations are now being accepted for the John Tyn- ber systems, as well as the transmission systems employing dall Award, which will be presented at OFC/NFOEC fibers. With the expansion of this technology, many indi- 2013. The deadline for nominations is 10 August, viduals have become worthy of consideration. 2012. The nomination form, award information and a list of This award, which is jointly sponsored by the IEEE previous John Tyndall recipients are available on the Pho- Photonics Society and the Optical Society, is presented to tonics Society web site: a single individual who has made outstanding contribu- http://www.photonicssociety.org/award-info tions in any area of lightwave technology, including optical http://www.photonicssociety.org/award-winners
Call for Nominations – Reminder IEEE Photonics Society 2013 Young The Young Investigator Award was established to Investigator Award honor an individual who has made outstanding technical Nominations for Young Investigator Award are now being contributions to photonics (broadly defined) prior to his solicited for submission to the Photonics Society Executive or her 35th birthday. Nominees must be under 35 years of Office. The deadline for nominations is 30 September, 2012. age on Sept. 30th of the year in which the nomination is The nomination form, awards information and a list of pre- made. The award may be presented either at the Optical vious recipients are available on the Photonics Society web site: Fiber Communications Conference (OFC), or the Confer- http://www.photonicssociety.org/award-info ence on Lasers and Electro-Optics (CLEO), to be selected http://www.photonicssociety.org/award-winners by the recipient.
14 IEEE PHOTONICS SOCIETY NEWSLETTER August 2012 News (cont’d)
IEEE Photonics Society (IPS) Formerly LEOS Candidates for the 2013–2015 Board of Governors
Ballots for the election of candidates to the Board of Governors will be distributed soon to all voting members. This year’s candidates are: J. Stewart Aitchison Luke Lester Perry Shum Ping Hon Tsang University of Toronto University of New Mexico Nanyang Technological The Chinese University of Martin Dawson Masataka Nakazawa University, Singapore Hong Kong University of Strathclyde, Tohoku University, Japan Michael Tan Ming Wu Glasgow Hewlett Packard Laboratories University of California, Berkeley
Careers and Awards
Efffective 2012, nomination deadlines for the IEEE Photonics Society Awards are listed as follows: Award Nomination deadline Distinguished Lectturer Awards 16 February Aron Kressel Award 5 April Engineering Achievement Award 5 April Quantum Electronics Award 5 April William Streifer Scientific Achievement Award 5 April Distinguished Service Award 30 April Graduate Sttudent Fellowship 30 May John Tyndall Award 10 August Young Investigator Award 30 September
August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 15 Membership Section
Benefits of IEEE Senior Membership There are many benefits to becoming an IEEE Senior Member: • The professional recognition of your peers for technical and professional excellence • An attractive fine wood and bronze engraved Senior Member plaque to proudly display. • Up to $25 gift certificate toward one new Society membership. • A letter of commendation to your employer on the achievement of Senior member grade (upon the request of the newly elected Senior Member.) • Announcement of elevation in Section/Society and/or local newsletters, newspapers and notices. • Eligibility to hold executive IEEE volunteer positions. • Can serve as Reference for Senior Member applicants. • Invited to be on the panel to review Senior Member applications. The requirements to qualify for Senior Member elevation are a candidate shall be an engineer, scientist, educator, techni- cal executive or originator in IEEE-designated fields. The candidate shall have been in professional practice for at least ten years and shall have shown significant performance over a period of at least five of those years.” To apply, the Senior Member application form is available in 3 formats: Online, downloadable, and electronic ver- sion. For more information or to apply for Senior Membership, please see the IEEE Senior Member Program website: http://www.ieee.org/organizations/rab/md/smprogram.html New Senior Members
The following individuals were elevated to Senior Membership Grade thru June: Bas Huiszoon Paul Reynolds Xiangfei Chen Gunter Steinmeyer Waldimar Amaya Zhili Lin
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16 IEEE PHOTONICS SOCIETY NEWSLETTER August 2012 Conference Section
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August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 17 Conference Section (cont’d)
Preview of The 2012 Group IV Photonics Conference
The IEEE International Conference on Group IV Photonics This year we aim to ensure that these dramatic changes are (GFP) is the leading conference dedicated to Silicon Photon- reflected in the conference and use it as best as possible to sup- ics and other group IV element based photonic materials and port these changes. We believe the GFP conference can play a devices. The conference was launched in 2004 by Dr. Richard critical role in enabling this transformation. But these changes Soref and Prof. Kang Wang in Hong Kong. The conference must also be reflected back into the conference itself to ensure its location rotates between Asia, Europe and the US. Last year’s continued success and growth. This is why this year we appoint- (2011) conference took place in London and was attended by ed sub-committee Co-Chairs from both industry and academia. more than 250 scientists from academia and industry. The This is also why this year we are seeking to ensure proactive and previous year’s (2010) conference, held in Beijing, was a re- engaged involvement from the full spectrum of relevant indus- sounding success. This year’s conference will be the 9th in tries and research communities to stimulate the growth of the the series and will be held in the beautiful and easily acces- conference. We feel the resulting cross-fertilization and interac- sible southwestern coastal city of San Diego, California from tion will be key to the growth and success of the field. 29–31 August 2012, at the Holiday Inn on the Bay. We have therefore worked to earn engagement in the With great support from Rose Ann Bankowski of the conference from the full eco system needed to ensure the IEEE Photonics Society, ([email protected]) we have commercial success of the field. From VCs to finance our organized an exciting schedule of events which will include startups; design software houses; academic and research in- a welcome reception on the 29th of August, a boat cruise stitutions; electronic chip makers; component, sub-system banquet on the San Diego Bay on the 30th, best paper and and system companies; manufacturing partners such as poster competitions, and a post-deadline competition on foundries and assembly houses; suppliers and service pro- August 31st. The conference is planned as a single track viders to most importantly customers and end users. We are conference and will include both oral and poster sessions of asking them to get involved and not only fund the confer- contributed and invited papers as well as a plenary session ence but also proactively participate and engage in it. comprising reviews on a number of important and timely The conference is organized into 3 sub-committees: topics. A post-deadline session will feature the most current “Silicon Photonics Integration, Applications and Manufac- and exciting results. For more information on the confer- turing Technology”, chaired by Dr. Hong Liu of Google ence program please visit www.gfp-ieee.org and Prof Mike Watts of MIT; “Photonic Devices and Nano- Si Photonics is going through a transformation from an Structures”, chaired by Dr. Ashok Krishnamoorthy of Or- exciting new field of research and discovery to a broad arena acle and Prof. Andrew Poon of the Hong Kong University, of technological development and industrial innovation. and “Advanced Materials and Associated Fabrication Tech- We see a proliferation of startups as well as larger players nologies”, chaired by Dr. Haisheng Rong of Intel and Prof. getting into the field. What is needed now to enable the Wim Bogaerts of Ghent University. These sub-committee formation of a lasting and successful industrial base, is the chairs end up doing all the real hard work! creation of a vibrant and coherent eco system that creates a The conference starts with plenary presentations by cohesive supply chain. Prof. Thomas L. Koch, Dean of the College of Optical
Boat cruise on San Diego Bay
18 IEEE PHOTONICS SOCIETY NEWSLETTER August 2012 Conference Section (cont’d)
Sciences of the University of Arizona, USA who will share On the Academic side we have an equally impressive set of with us his thoughts on the status and future of Si Photon- speakers: Prof. Toshihiko Baba of the Yokohama National Uni- ics and Dr. Kinam Kim, Samsung Fellow and President & versity, Japan talking on Photonic nanostructure transceiver CEO of Samsung Advanced Institute of Technology, Korea, devices for advanced optical networks; Prof. Erich Kasper of who will tell us about Samsung’s vision and interest in Si the University of Stuttgart, Germany on GeSn light- emitting Photonics. Dr. Andrew Rickman, the founder of the first PIN diodes on Si, Prof Xiang Zhang of the University of Cal- company commercializing Si photonics and now running a ifornia-Berkeley, on grapheme based photonic devices, Prof VC company funding such ventures, will give the banquet Wei-Ping Huang of McMaster University, Canada, talking speech which we expect will serve as a guide and inspira- on the modeling and simulation of large-scale photonic in- tion to those of us who dream of setting up startups in this tegrated circuits including radiation, Prof. Susumu Noda of area. We also have an exciting line up of invited talks. From Kyoto University, Japan on advanced light manipulation with Industry we will hear from: Dr. Ali Ghiasi of Broadcom, photonic crystal nano structures; and Mr. Rodolfo Camacho- on the need for on-chip photonic integration for large data Aguilera of the Massachusetts Institute of Technology on the warehouse switches; Dr. Mark Noel of Cisco on the need for use of Ge-on-Si to form electrically pumped CMOS lasers. Si Photonics in the future scaling of internet; Dr. Thierry This field of invited speakers plus contributed presenta- Pinguet of Luxtera, on the latest developments in CMOS tions on cutting edge research will make this conference a photonics; Dr. Ryohei Urata of Google, on Silicon photon- unique opportunity to learn about current state-of-the-art ics for access network technologies; Dr. Glenn Li of Oracle Silicon Photonics technology and envision future develop- on their CMOS photonics platform for sub-pJ/bit macro- ments. Pre-Registration Deadline is 27 July 2012 chip interconnects; and Dr. Valery Tolstikhin of OneChip General Co-chairs, Photonics on the latest developments in InP technology Dr. Mehdi Asghari, CTO, Kotura, USA and applications. Dtr. Jurgen Mitchel, Senior Research Scientist, MIT, USA
Preview to the 2012 Annual Meeting The 2012 IEEE Photonics Conference will be held at the guished speakers from around the world will be highlighted: Hyatt Regency San Francisco Airport hotel in Burlingame, CA Dr. Ashok Krishnamoorthy from Oracle, USA will discuss during the 23rd–27th September. This year’s conference saw a “VCSELs and Silicon Photonic Optical Interconnects for Fu- record number of paper submissions and as with previous suc- ture Computing Systems”; Prof. Takao Someya from the Uni- cessful meetings, will comprise an extensive range of technical versity of Tokyo, Japan will speak about “Large-area, Flexible, activities in addition to some unique events. Organic Photonics and Electronics”; Prof. Martin Wegener As usual, there will be a Sunday program which will feature from the Karlsruhe Institute of Technology, Germany will a number of events. The annual GOLD (Graduates Of the Last talk about “3D Photonic Metamaterials and Transformation Decade) session will include an invited talk by a recent graduate, Optics”; and finally, Prof. Eli Yablonovitch from UC Berke- as well as poster presentations from the Society’s graduate fel- ley, USA will discuss “The Opto-Electronic Physics that Just lowship winners. After the GOLD Session there will be session Broke the Efficiency Record in Solar Cells”. devoted to Entrepreneurship, following in the path of the suc- The main technical program of the conference will run cessful event that was introduced at last year’s IPC. This session from Monday morning until Thursday afternoon. In addition will feature a number of speakers from the industry giving their to the contributed papers, the Society’s 14 technical sub-com- personal perspectives and insights. mittees have put together an outstanding program of Invited 2012 marks a very special birthday as it is the 50th Anni- Talks with 121 speakers scheduled to present. There will also versary of the Semiconductor Laser. The very first operational be four Special Symposia featured covering a variety of hot semiconductor laser was made in 1962 by Robert Hall and topics: “Quantum Photonics”, “Optical Microresonators and his associates at the General Electric Co. laboratories in Sche- Novel Phenomena”, “III-V on Si for Silicon Photonics”, and nectady, NY. In the 50 years since we have witnessed great “Photovoltaics based on Plasmonics and Nanophotonics”. The progress in its development. To celebrate the occasion, there technical program also includes a Post Deadline Session that will be a special session on Sunday evening devoted to the will take place on Wednesday evening. semiconductor laser. Several renowned pioneers will provide The Photonic Society’s Awards Ceremony will be held some historical perspectives and share their experiences in the during IPC on Monday evening, immediately after the con- development of semiconductor laser technology. clusion of the first scheduled Plenary Session. This will be The Plenary Sessions of IPC2012 will take place in the followed by a Welcome Reception to which all attendees Monday and Tuesday afternoons of the conference. Four distin- are invited.
August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 19 Conference Section (cont’d)
JOIN US Optical MEMS & Nanophotonic Conference
General Chair: 6-9 David Dickensheets AUGUST 2012 Montana State University, USA
THE BANFF CENTRE The 2012 International Conference on Optical MEMS & Nanophotonics will bring together BANFF, ALBERTA VJGNCVGUVVGEJPKECNCFXCPEGOGPVKPVJGſGNFQH QRVKECNOKETQCPFPCPQU[UVGOU5RGEKſECNN[VJG CANADA EQPHGTGPEGHGCVWTGUVJGITQYKPIſGNFUCVVJG intersection of optical micro-electro-mechanical systems and nanophotonic devices and systems. Integration and miniaturization of photonic and optical MEMS components and systems towards micro- and nano-scale for various applications Nanophotonics Program Chair: will be the main theme of the conference. George Barbastathis Massachusetts Institute of Technology, USA Optical MEMS Program Chair Yves-Alain Peter Ecol e Polytechnique de Montreal, Canada
WWW.PHOTONICSCONFERENCES.ORG www.MEMS-IEEE.org
20 IEEE PHOTONICS SOCIETY NEWSLETTER August 2012 Conference Section (cont’d)
JOIN US AT THE
9th International Conference on GROUP IV PHOTONICS
29-31 August
HOLIDAY INN ON THE BAY | SAN DIEGO, CA USA
CONFERENCE CO-CHAIRS: Mehdi Asghari, Kotura Inc., USA Jurgen Michel, Massachusetts Institute of Technology, USA
www.GFP-IEEE.org Sponsored by www.PhotonicsConferences.org
August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 21 Conference Section (cont’d)
PRE-REGISTRATION DEADLINE: 11-13 10 AUGUST 2012 SEPTEMBER 2012 IEEE Photonics Society
AVIONICS, FIBER-OPTICS AND PHOTONICS CONFERENCE
COURTYARD MARRIOTT COCOA BEACH COCOA BEACH, FLORIDA USA
GENERAL CHAIR: Bill Jacobs, SPAWAR Systems Center Pacific, USA
PROGRAM CHAIR: Richard DeSalvo, Harris Corporation, USA
EXHIBITS CHAIR: John Gallo, Xadair Technologies, USA
www.AVFOP-IEEE.org Sponsored by www.PhotonicsConferences.org
22 IEEE PHOTONICS SOCIETY NEWSLETTER August 2012 Conference Section (cont’d)
The 38th European Conference and Exhibi on on Op cal Communica on (ECOC) will be held in Amsterdam, The Netherlands, in the RAI Congress Center, Sep. 16-20.
ECOC is the largest conference on optical communication in Europe, and one of the most prestigious and long-standing events in this field worldwide. ECOC attracts more than 1,000 participants each year and has an exhibition space of more than 10,000 m2. The latest advances in optical communication technologies are reported, from fibers, components and systems up to networks. ECOC should not be missed by anyone interested in optical communication, such as researchers, product developers, sales managers and telecommunication market developers. Leading-edge technical progress will be reported in diligently selected papers in a blend of keynote addresses, invited and regularly contributed papers, tutorial papers, and special symposia that place a specific theme in focus. The Workshops on Sunday Sep. 16 offer ample opportunities for interaction on the hottest research topics. Moreover, as in every two years since 2006, within ECOC2012 there will be CLEO Focus sessions to report the latest results from basic research in optical communication technologies. You may also take the opportunity to visit the lively city of Amsterdam, with its world-famous 200+ kilometers of small canals in the old city part, its renowned museums with paintings of the old Dutch masters (Rembrandt, Van Gogh, . . .), its numerous international restaurants, cosy pubs, and so on. You may consider a sightseeing tour in the immediate surroundings, to visit typical Dutch windmills, cheese markets, traditional fishermen villages, etc. For more details and registration, please visit www.ecoc2012.org .
ECOC2012 General Chairs CLEO Focus 2012 Technical Program Chairs Ton Koonen Kobus Kuipers COBRA, Eindhoven Univ. of Technology, The AMOLF, The Netherlands Netherlands Geert Morthier Peter Van Daele IMEC – Ghent University, Belgium IMEC-IBBT – Ghent University, Belgium ECOC 2012 ECOC2012 Technical Program Chairs Organizing Secretariat Harm Dorren c/o Medicongress COBRA, Eindhoven Univ. of Technology, The Kloosterstraat 5 Netherlands B-9960 Assenede, Belgium Phone +32 9 218 8580 Piet Demeester E-mail [email protected] IBBT – Ghent University, Belgium
August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 23 Conference Section (cont’d)
www.IPC-IEEE.org
Biophotonics PPlenarlenarypy Speeakersakers Displays & Lighting High Power & Intensity Sources AAshokshok KrishnamoorthyKrishnamoorthy Microwave Photonics Oracle, USA Nanophotonics “Driving VCSELs and silicon photonic optical intercon- Non-Linear & Ultrafast Optics PGEVUVQDTWVCNCTGCCPFGPGTI[GHſEKGPEKGUHQTHWVWTGEQO- Optical Communications putingputing systems” Optical Fiber Technology Takao Someya Optical Communications University of Tokyo, Japan Optical Fiber Technology “Large-area, FFlexible,lexible, OrganOrganicic PPhotonicshotonics anandd EElectronics”lectronics” Optical Interconnects MMartin Wegener Optical Networks & Systems KarKarlsruhelsruhe InstInstituteitute ooff TecTechnologyhnology (KIT), InstInstituteitute ooff Ap- Photodetectors, Sensors, Systems & Imaging pliieded PhPhysiics,cs, Germany Photonics Integration & Packaging “3D Photonich i Metamaterialsi l andd Transformationf i Optics”i PhotonicPhotonic MaterialsMaterials SSciencecience & TechnologyTechnology EElli Yabbllonovii tch Semi Semiconductorconductor Lasers UC Berkely, USA ő6JGő6JG1RVQ'NGEVTQPKE2J[UKEU6JCV,WUV$TQMGVJG'HſEKGPE[ Record in Solar Cells” SSpSpecialpec ia lSl SySymposia ypmpos ia Quantum Photonics OOpticalptical MicroresonatorsMicroresonators anandd NoveNovell PPhenomenahenomena 23-2723-27 SSEPTEMBEREPTEMBER 2012 III-V on Si for Silicon Photonics HHyattyatt ReRegencygency San Francisco AirAirportport Burlingame , California PPhotovootovoltaicsltaics basedbased on PlasmonicsPlasmonics anandd NanophotonicsNanophotonics
www.photonicsconferences.org
Image courtesy of THE IEEE Photonics Journal ., Vol.3, No4,pp.756-764 (2011)
24 IEEE PHOTONICS SOCIETY NEWSLETTER August 2012 Conference Section (cont’d)
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August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 25 Conference Section (cont’d)
Eldorado Hotel & Spa Santa Fe, New Mexico 5-8 MAY 2013
Interconnect SsSystems, Architectures & Applications Interconnects in Supercomputers & Datacenters Optical Transmitters, Receivers & Components Ultra Low Power and/or High Bitrate Interconnects Fundamentaental Limittss & Novel Concepts Electrical & Wireless Interconnects Silicon Photonics Hybrid & Monolithic Photonics Integration End-to-End (Elleectrtricalal--OOptical-Electrical) Links Optical Switching Devivices, Architectures & Control Networks Emergnging Interconnect Standards Interconnect Packagiging Paper SSububmission Deadline Pre-RePre-Registrationgistration DeDeadlinee 11 Jaanuarynuary 20132013 5 April 20133
www.OI-IEEE.orgw www.PhotonicsConferences.org
26 IEEE PHOTONICS SOCIETY NEWSLETTER August 2012 Conference Section (cont’d)
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August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 27 Conference Section (cont’d) Forthcoming Meetings with ICO Participation
ICO, THE PLACE WHERE THE WORLD OF OPTICS MEET Responsibility for the correctness of the information on this page rests with ICO, the International Commission for Optics; http://www.ico-optics.org/. President: M L Calvo, Universidad Complutense de Madrid, Departamento de Óptica, Facultad de Ciencias Físicas, Ciudad Universitaria s/n, E 28040 Madrid, Spain; [email protected] Secre- tary: Prof. Gert von Bally, Centrum für Biomedizinische Optik und Photonik, Universitätsklinikum Münster, Robert-Koch-Straße 45, 48149 Münster, Germany; [email protected] 3–6 September 2012 Crete, Greece fax: +86-27-87792224 International Conference “Micro- to Contact: George Kiriakidis, [email protected]. Nano-Photonics III - ROMOPTO 2012 phone: +302810391271, [email protected] Bucharest, Romania fax: +302810391295 Contact: Valentin Vlad, [email protected] Beginning of 2013 phone: +40 21 457 44 67, 1st EOS Topical Meeting on Photonics fax: 40-21- 457 44 79; -457 42 43 2–5 November 2012 for Sustainable Development - Focus [email protected] 5th International Photonics and Opto- on the Mediterranean (PSDM 2013) elec-tronics Meetings (POEM 2012) Tunis, Tunisia 21–25 October 2012 Wuhan, China Contact: Julia Dalichow, 4th International Symposium on Contact: Xiaochun Xiao, phone: +49 511 2788 155, Transparent Conductive Materials Qingming Luo, fax: +49 511 2788 117 (TCM 2012) phone: +86-27-87792227, 87792223, [email protected]
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28 IEEE PHOTONICS SOCIETY NEWSLETTER August 2012 Conference Section (cont’d)
IEEE Photonics Society Co–Sponsored Events - 2012
ICCE August 1–3, 2012 Fourth International Conference on Communications and Electronics Saigon Morin Hotel Hue, Vietnam http://www.hut-icce.org/
IPRM August 27–30, 2012 Compound Semiconductor Week 24th International Conference on Indium Phosphide and Related Materials University of California Santa Barbara, CA, http://csw2012.ece.ucsb.edu
NUSOD August 28–31, 2012 12th International Conference on Numerical Simulation of Optoelectronic Devices Chinese Academy of Science Shanghai, China http://www.nusod.org/2012/
PS September 11–14, 2012 2012 International Conference on Photonics in Switching Palais des Congrès Corsica Island, France http://www.ps2012.net
ECOC September 16–20, 2012 38th European Conference on Optical Communication RAI Congress Centre Amsterdam, The Netherlands http://www.ecoc2012.org
OFS—22 October 15–19, 2012 22nd International Conference on Optical Fiber Sensors China Hall of Science and Technology Beijng, China http://www.ofs-22.org
IWOW October 22, 2012 2012 International Workshop on Optical Wireless Communications Scuola Superiore Sant’Anna Pisa, Italy http://opticwise.uop.gr/index.php/announcements/19-workshop-at-pisa.html
PGC December 13–16, 2012 2012 Photonics Global Conference Nanyang Technological University Suntec City, Singapore http://www.photonicsglobal.org/index.php
CODEC December 17–19, 2012 2012 International Conference on Computers and Devices for Communication Hyatt Regency Kolkata Kolkata, India http://www.codec-rpe.org/index.html
August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 29 Publication Section
Photonics Journal to become IEEE’s first all open-access journal
Reach a wider audience for your research paper at lower cost Beginning on April 15th, the IEEE Photonics Society’s Photonics Journal Breakthroughs began transitioning to a new “open access” publishing model that will
Coherent Photon Sources Nonlinear Photonic Effects in Photonics Nano-Photonics Bio-Photonics - Silicon Photonics Photonics Materials and Engineered Nanostructures Plasma Photonics, Terahertz and Microwave Photonics is now foster a much wider readership of published papers, reduce the cost of Integrated Photonic Systems 2010 available as open access publication, and enable authors to comply with requirements an open access feature of funding agencies that their research be made available without charge. On January 1, 2013, Photonics Journal will become the first IEEE journal to transition to a completely open access publication process. Lower cost for open access publication Authors choosing the new open access publication option for their papers in Photonics Journal will pay just $1,350 (lowered from $2,800). This one low open access fee covers papers up to eight pages, with additional pages at $120 each. Transition to open access for all submissions to Photonics Journal Until July 1, 2012, authors will have the option of submitting papers under the existing submission rules, or choosing the new open access publication method. After July 1, all papers published in Photonics Journal must be submitted under the open access model. In addition, on January 1, 2013 all back issues of Photonics Journal (including all 2012 papers) will become available via open access. Photonics Journal: the IEEE’s first online-only peer reviewed journal, will be the IEEE’s first all-open-access journal The IEEE Photonics Journal offers a comprehensive technical scope within photonics science and technology, reflecting the latest research in the technical community engaged in the generation, control, detection and utilization of electromagnetic radiation, spanning frequencies from terahertz to x-rays. Please visit the Journal’s website to learn more: http://www.photonicsjournal.org/index.html The Journal maintains the highest standards of editorial quality and fair-minded rigorous review processes, characteristic of all IEEE journals. IEEE Photonics Journal offers rapid publication of papers on IEEE Xplore. The expanded capabilities supported by online publication also allow open-access and multimedia options for authors, while providing significantly increased value to readers.
Learn more about the IEEE Photonics Society at photonicssociety.org
30 IEEE PHOTONICS SOCIETY NEWSLETTER August 2012 Publication Section (cont’d)
Call for Papers Announcing an Issue of the IEEE JOURNAL School, Bordeaux, France, Stefan Maier, Imperial Col- OF SELECTED TOPICS IN QUANTUM lege London, London, UK, and Din Ping Tsai, National ELECTRONICS on Nanoplasmonics Taiwan University, Taipei, Taiwan. Submission Deadline: August 1, 2012 The deadline for submission of manuscripts is August 1, The last decade has seen an explosion of research inter- 2012. Preprints of accepted manuscripts will be post- est linking plasmons to various disciplines in physics, ed on the IEEE Xplore website within 2 weeks of au- chemistry, biology, engineering, material science, thin thors correctly uploading their final files in the Scholar film technology, optics, nanosciences, etc. Nanoplas- One Manuscripts “Awaiting Final Files” queue. Final page monics aims at investigating and controlling light on proofs of accepted papers are normally posted online length scales comparable or below the wavelength of op- in IEEE Xplore within 6 weeks of authors uploading eration, possibly down to tens of nanometers and on fem- their final files, if there are no page proof corrections. tosecond time scales. Control is achieved with individual Hardcopy publication of the issue is scheduled for May/ metallic nanostructures, specifically tailored to increase June of 2013. effective light-matter interactions by providing large lo- cal field enhancements or by slowing down propagation. All submissions will be reviewed in accordance with the The IEEE Journal of Selected Topics in Quantum Elec- normal procedures of the Journal. tronics invites manuscript submissions ranging from fundamental studies to applications of nanoplasmonics. For inquiries for this Special Issue, please contact: Technical areas include but are not limited to: JSTQE Editorial Office – Chin Tan Lutz • Plasmonic nanoparticles IEEE/Photonics Society, 445 Hoes Lane, • Light-matter nanoscale interaction and nanoantennae Piscataway, NJ 08854, U.S.A. • Low-loss doped semiconductors with plasmonic Phone: 732-465-5813, Email: [email protected] properties • Subwavelength metallic surfaces The following supporting documents are required during • Scattering and amplification of surface plasmons manuscript submission at http://mc.manuscriptcentral. • Quantum plasmonics com/pho-ieee (please select the Journal of Selected • Optical metamaterials Topics in Quantum Electronics from the drop down • Advanced nanomaterials, flexible and non-planar meta- menu). surfaces 1) PDF or MS Word manuscript (double columned, • Novel nanofabrication and calculation methods for 12 pages for an Invited Paper, 8 pages for a Con- plasmonics tributed paper.) Manuscripts over the standard • Nonlinear and ultrafast plasmonics page limit will have an Overlength charge of • Infrared and terahertz plasmonics $220.00 imposed per page. Bios of ALL authors • Ultra-compact photonic devices are mandatory, photos are optional. You may find • Plasmonics for photovoltaics the Tools for Authors link useful: http://www.ieee. • Plasmonics for advanced microscopy and spectroscopy org/web/publications/authors/transjnl/index.html • Plasmonics for biomedical applications 2) Completed Color Agreement/decline form. Please • Optical interconnects at subwavelength scales email [email protected] to request for this form. 3) MS Word document with full contact information The Primary Guest Editor for this issue is Hatice Altug, for all authors as indicated below: Last name (Fam- Boston University, Boston, MA, USA, and the Guest Ed- ily name), First name, Suffix (Dr./Prof./Ms./Mr.), itors are Andrea Alù, University of Texas, Austin, TX, Affiliation, Department, Address, Telephone, USA, Philippe Lalanne, Institut d’Optique Graduate Facsimile, Email.
August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 31 Publication Section (cont’d)
Call for Papers Announcing an Issue of the IEEE JOURNAL of authors correctly uploading their final files in the OF SELECTED TOPICS IN QUANTUM Scholar One Manuscripts “Awaiting Final Files” queue. Fi- ELECTRONICS on Semiconductor Lasers nal page proofs of accepted papers are normally posted Submission Deadline: November 1, 2012 online in IEEE Xplore within 6 weeks of authors up- loading their final files, if there are no page proof cor- The IEEE Journal of Selected Topics in Quantum Elec- rections. Hardcopy publication of the issue is scheduled tronics invites manuscripts that document the current state for July/August 2013. of the art in Semiconductor Lasers. Technical areas in- clude but are not limited to: All submissions will be reviewed in accordance with the • high-speed VCSELs and edge-emitting lasers normal procedures of the Journal. • low energy/bit lasers • Vertical External Cavity Surface Emitting Lasers (VEC- For inquiries regarding this Special Issue, please SELs) contact: • novel high power laser schemes JSTQE Editorial Office - Chin Tan Lutz • short pulse sources IEEE/Photonics Society • micro- and nanolasers 445 Hoes Lane, • short wavelength and visible lasers Piscataway, NJ 08854, U.S.A. • quantum dot/wire lasers Phone: 732-465-5813, • photonic crystal lasers Email: [email protected] • lasers on new semiconductor materials • tunable lasers The following supporting documents are required • lasers in photonic and electronic integrated circuits during the mandatory online submission at http:// • quantum cascade, interband and mid-IR lasers mc.manuscriptcentral.com/pho-ieee (please select the Jour- • THz lasers nal of Selected Topics in Quantum Electronics from the drop • coupled semiconductor lasers down menu). • semiconductor ring lasers • lasers in microwave photonics 1) PDF or MS Word manuscript (double column format, • synchronization of chaotic lasers, laser dynamics up to 12 pages for an invited paper, up to 8 pages for • SOA and LED topics closely related to lasers a contributed paper). Manuscripts over the standard • new applications of semiconductor lasers page limit will have an overlength charge of $220.00 per page imposed. Biographies of all authors are man- The Primary Guest Editor for this issue is Luke F. Lester, datory, photographs are optional. You may find the University of New Mexico, USA, and the Guest Editors are Tools for Authors link useful: http://www.ieee.org/ Sze-Chun Chan, City University of Hong Kong, China, web/publications/authors/transjnl/index.html Vassilios Kovanis, Air Force Research Laboratory, USA, 2) Completed Color Printing Agreement/Decline form. Tomoyuki Miyamoto, Tokyo Institute of Technology, Ja- Please email [email protected] to request this form. pan, and Stephen Sweeney, University of Surrey, UK. 3) MS Word document with full contact information for all authors as indicated below: Last name (Family The deadline for submission of manuscripts is November name), First name, Suffix (Dr./Prof./Ms./Mr.), Affili- 1, 2012. Preprints of accepted manuscripts will be ation, Department, Address, Telephone, Facsimile, posted on the IEEE Xplore website within 2 weeks Email.
32 IEEE PHOTONICS SOCIETY NEWSLETTER August 2012 Publication Section (cont’d)
Call for Papers Announcing an Issue of the IEEE proof corrections. Hardcopy publication of the issue is JOURNAL OF SELECTED TOPICS IN scheduled for September/October 2013. QUANTUM ELECTRONICS on Numerical Simulation of Optoelectronic Devices All submissions will be reviewed in accordance with the Submission Deadline: December 1, 2012 normal procedures of the Journal.
The IEEE Journal of Selected Topics in Quantum Elec- For inquiries regarding this Special Issue, please contact: tronics invites manuscript submissions in the area of Nu- JSTQE Editorial Office - Chin Tan Lutz merical Simulation of Optoelectronic Devices. The IEEE/Photonics Society purpose of this issue of JSTQE is to document the current 445 Hoes Lane, state of the art and the variety of leading-edge work in this Piscataway, NJ 08854, U.S.A. field through a collection of original papers. Papers are Phone: 732-465-5813, solicited on theory, modeling, simulation, and analysis of Email: [email protected] modern optoelectronic devices including materials, fabrica- tion and application. Optoelectronic devices are based on The following supporting documents are required during the the interaction of photons and electrons, including laser mandatory online submission at http://mc.manuscriptcentral. diodes, light emitting diodes, optical modulators, optical com/pho-ieee (please select the Journal of Selected Topics in amplifiers, solar cells, photodetectors, and optoelectronic Quantum Electronics from the drop down menu). integrated circuits. Validation of theoretical results by mea- surements is desired. 1) PDF or MS Word manuscript (double column format, The Primary Guest Editor for this issue is Joachim up to 12 pages for an invited paper, up to 8 pages for Piprek, NUSOD Institute, USA, and the Guest Editors a contributed paper). Manuscripts over the standard are Enrico Bellotti, Boston University, USA; Seoung- page limit will have an overlength charge of $220.00 Hwan Park, Catholic University of Daegu, South Korea; per page imposed. Biographies of all authors are man- Bernd Witzigmann, University of Kassel, Germany; Beat datory, photographs are optional. You may find the Ruhstaller, Fluxim AG, Switzerland. Tools for Authors link useful: http://www.ieee.org/ The deadline for submission of manuscripts is Decem- web/publications/authors/transjnl/index.html ber 1, 2012. Preprints of accepted manuscripts will 2) Completed Color Printing Agreement/Decline form. be posted on the IEEE Xplore website within 2 weeks Please email [email protected] to request this form. of authors correctly uploading their final files in the 3) MS Word document with full contact information Scholar One Manuscripts “Awaiting Final Files” queue. for all authors as indicated below: Last name (Family Final page proofs of accepted papers are normally name), First name, Suffix (Dr./Prof./Ms./Mr.), Affili- posted online in IEEE Xplore within 6 weeks of au- ation, Department, Address, Telephone, Facsimile, thors uploading their final files, if there are no page Email.
August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 33 Publication Section (cont’d)
Announcing a Special Issue of the IEEE/OSA Journal of Display Technology on Solid State Lighting Submission Deadline: 1 SEPTEMBER 2012
The IEEE / OSA Journal of Display Technology (JDT) invites manuscript submissions for a special issue in the area of solid state lighting. The purpose of this issue of JDT is to document recent advances in the physics, simulation, material, and device physics of high efficiency solid state lighting technology, covering both inorganic and organic light-emitting diodes. Broad technical areas include (but are not limited to): Materials, Device, Simulation, and Physics of III-Nitride and III-V Light-Emitting Diodes new substrate technology for achieving high-efficiency light-emitting diodes semi-/non-polar and polar III-Nitride quantum wells LEDs with large optical matrix elements physics and solutions for addressing efficiency-droop in light-emitting diodes novel concept for light extraction efficiency enhancement in light-emitting diodes reliability and quality of white light emitted by solid-state lighting devices novel white LEDs and broadband light-emitting diodes surface plasmon and photonic crystal light-emitting diodes thermal management and modeling in visible light-emitting diodes and laser devices Materials, Device Technology, and Physics of Organic Light-Emitting Diodes novel concept for light extraction efficiency high efficiency organic materials for OLEDs in all visible spectral range white light generation and device reliability in organic light-emitting diodes flexible OLEDs for lighting and display technologies solution based processing and other techniques for low cost fabrication materials / components and packaging for OLEDs manufacturing technology and modeling The Guest Editors for this issue are Prof. Nelson Tansu, Lehigh University (Bethlehem, PA, USA); Prof. Qibing Pei, University of California Los Angeles (Los Angeles, CA, USA); and Prof. Franky So, University of Florida (Gainesville, FL, USA).
The deadline for submission of manuscripts is September 1st 2012 and publication is tentatively scheduled for the February 2013 issue. Manuscripts should conform to requirements for regular papers (up to 8 double-column, single-spaced journal pages in length, keywords, biographies, etc.). All submissions will be reviewed in accordance with the normal procedures of the Journal. The IEEE Copyright Form should be submitted after acceptance. The form will appear online in the Author Center in Manuscript Central after an acceptance decision has been rendered.
For all papers published in JDT, there are voluntary page charges of $110.00 per page for each page up to eight pages. Invited papers can be twelve pages in length before overlength page charges of $220.00 per page are levied. The length of each paper is estimated when it is received. Authors of papers that appear to be overlength are notified and given the option to shorten the paper.
Authors may opt to have figures displayed in color on IEEE Xplore at no extra cost, even if they are printed in black and white in the hardcopy edition. Additional charges will apply if figures appear in color in the hardcopy edition of the Journal. Manuscripts should be submitted electronically through cript Central: http://mc.manuscriptcentral.com/jdt-ieee. Be sure to select Solid State that your paper is directed to the special issue editors. IEEE Tools for Authors are available online at: http://www.ieee.org/organizations/pubs/transactions/information.htm
Inquiries can be directed to JDT Staff, IEEE Photonics Society Editorial Office, at [email protected].
34 IEEE PHOTONICS SOCIETY NEWSLETTER August 2012 Publication Section (cont’d)
Announcing a Special Issue of the IEEE/OSA Journal of Display Technology on Green Technology Submission Deadline: 1 December 2012 The IEEE / OSA Journal of Display Technology (JDT) invites manuscript submissions for a special issue in the area of green display technology. The purpose of this issue of JDT is to document recent advances in the physics, simulation, material, and device physics of high efficiency display technology, integration and adaptation of power scavenging devices, and new driving technique and display architecture. Broad technical areas include (but are not limited to): ► Power saving techniques Modeling and simulation setups Low power driver design Improved pixel designs and physical layouts New display architecture and pixel orientation for power management Power management algorithms ► High performance driving/switching devices Device physics for better transistor performance New material, device structure, and fabrication techniques Techniques for improving contacts and interfaces etc. Techniques for improving the line parasitic (e.g. lower resistance and capacitance) ► High efficiency light emitting devices Device physics for LED efficiency improvement Novel back lights for LCD displays Innovative Device structure and material for high efficiency organic light emitting diode Alternative light emitting devices ► Display Technologies Alternative higher efficiency light modulating materials (e.g. electrowetting, etc.) MEMs based displays etc. Improved electronic papers Hybrid technologies ► Energy Scavenging Techniques Materials and Circuits for scavenging energy to recycle power Materials for thermoelectrics, piezoelectrics, photodiodes; circuits, etc. Integration and fabrication of energy scavenging devices into the display
The Guest Editors for this issue are Dr. Reza Chaji, IGNIS Innovation, and University of Waterloo (Waterloo, ON, Canada ); Dr. Sanjiv Sambadan, Assistant Professor, Indian Institute of Science–(Bengaluru, India); and Prof. Heesub Lee, Sungsil University(Seoul, Korea).
The deadline for submission of manuscripts is December 1st 2012 and publication is tentatively scheduled for the June 2013 issue. Manuscripts should conform to requirements for regular papers (up to 8 double-column, single- spaced journal pages in length, keywords, biographies, etc.). All submissions will be reviewed in accordance with the normal procedures of the Journal. The IEEE Copyright Form should be submitted after acceptance. The form will appear online in the Author Center in Manuscript Central after an acceptance decision has been rendered. For all papers published in JDT, there are voluntary page charges of $110.00 per page for each page up to eight pages. Invited papers can be twelve pages in length before overlength page charges of $220.00 per page are levied.The length of each paper is estimated when it is received. Authors of papers that appear to be overlength are notified and given the option to shorten the paper.
Authors may opt to have figures displayed in color on IEEE Xplore at no extra cost, even if they are printed in black and white in the hardcopy edition. Additional charges will apply if figures appear in color in the hardcopy edition of the Journal. IEEE’s Manuscript Central: http://mc.manuscriptcentral.com/jdt-ieee. Be sure to select “2012 Green TechnologySpecial Issue”as the Manuscript Type, rather than “Original Paper.” This will ensure that your paper is directed to the special issue editors. IEEE Tools for Authors are available online at: http://www.ieee.org/organizations/pubs/transactions/information.htm
Inquiries can be directed to JDT Staff , IEEE Photonics Society Editorial Office, at [email protected].
August 2012 IEEE PHOTONICS SOCIETY NEWSLETTER 35 ADVERTISER’S INDEX The Advertiser’s Index contained in this issue is IEEE Photonics compiled as a service to our readers and advertis- ers. The publisher is not liable for errors or omis- sions although every effort is made to ensure its Society Newsletter accuracy. Be sure to let our advertisers know you found them through the IEEE Photonics Society Advertising Sales Offices Newsletter. 445 Hoes Lane, Piscataway NJ 08854 Advertiser ...... Page # www.ieee.org/ieeemedia Impact this hard-to-reach audience in their own Society General Photonics ...... CVR 2 publication. For further information on product and recruitment advertising, call your local sales office. IEEE Marketing Department . . . . CVR 3 MANAGEMENT Midwest/Ontario, Canada New England/ Optiwave Systems Inc ...... CVR 4 James A. Vick Will Hamilton Eastern Canada Staff Director, Advertising Phone: 269-381-2156 Liza Reich Phone: 212-419-7767 Fax: 269-381-2556 Phone: +1 212 419 7578 Santec USA Corp...... 13 Fax: 212-419-7589 [email protected] Fax: 212-419-7589 [email protected] IN, MI. Canada: Ontario [email protected] ME, VT, NH, MA, RI Susan E. Schneiderman West Coast/Mountain States Canada: Quebec, Business Development Western Canada Nova Scotia, Manager Marshall Rubin Prince Edward Island, Phone: 732-562-3946 Phone: +1 818 888 2407; Newfoundland, Fax: 732-981-1855 Fax: +1 818 888 4907 New Brunswick [email protected] [email protected] Photonics Society AZ, CO, HI, NM, NV, Southeast Marion Delaney Mission Statement UT, AK, ID, MT, WY, Cathy Flynn Advertising Sales Director OR, WA, CA. Canada: Phone: 770-645-2944 Photonics Society shall advance the interests Phone: 415-863-4717 British Columbia Fax: 770-993-4423 of its members and the laser, optoelectronics, Fax: 415-863-4717 [email protected] [email protected] VA, NC, SC, GA, FL, AL, and photonics professional community by: Europe/Africa/Middle East MS, TN • providing opportunities for information PRODUCT Heleen Vodegel Phone: +44-1875-825-700 exchange, continuing education, and ADVERTISING Midwest/South Central/ Fax: +44-1875-825-701 professional growth; Midatlantic Central Canada [email protected] • publishing journals, sponsoring confer- Lisa Rinaldo Darcy Giovingo Phone: 732-772-0160 Europe, Africa, Middle East ences, and supporting local chapter and Phone: 847-498-4520 Fax: 732-772-0161 Fax: 847-498-5911 student activities; [email protected] Asia/Far East/ [email protected]; • formally recognizing the professional NY, NJ, PA, DE, MD, DC, Pacific Rim AR, IL, IN, IA, KS, LA, contributions of members; KY, WV Susan Schneiderman MI, MN, MO, NE, ND, • representing the laser, optoelectronics, Phone: 732-562-3946 SD, OH, OK, TX, WI. New England/South Central/ Fax: 732-981-1855 and photonics community and serving as Canada: Ontario, Eastern Canada [email protected] Manitoba, Saskatchewan, its advocate within the IEEE, the broader Jody Estabrook Asia, Far East, Pacific Rim, Alberta scientific and technical community, and Phone: 774-283-4528 Australia, New Zealand Fax: 774-283-4527 West Coast/Southwest/ society at large. [email protected] RECRUITMENT Mountain States/Asia ME, VT, NH, MA, RI, CT, ADVERTISING Tim Matteson AR, LA, OK, TX Photonics Society Midatlantic Phone: 310-836-4064 Canada: Quebec, Nova Scotia, Lisa Rinaldo Fax: 310-836-4067 Field of Interest Newfoundland, Prince Edward Phone: 732-772-0160 [email protected] The Field of Interest of the Society shall be la- Island, New Brunswick Fax: 732-772-0161 AZ, CO, HI, NV, NM, sers, optical devices, optical fibers, and associat- [email protected] UT, CA, AK, ID, MT, Southeast ed lightwave technology and their applications NY, NJ, CT, PA, DE, MD, WY, OR, WA. Thomas Flynn DC, KY, WV Canada: British Columbia in systems and subsystems in which quantum Phone: 770-645-2944 electronic devices are key elements. The Society Fax: 770-993-4423 is concerned with the research, development, [email protected] Europe/Africa/Middle East Heleen Vodegel design, manufacture, and applications of ma- VA, NC, SC, GA, FL, AL, MS, TN Phone: +44-1875-825-700 terials, devices and systems, and with the vari- Fax: +44-1875-825-701 ous scientific and technological activities which Midwest/Central Canada [email protected] contribute to the useful expansion of the field of Dave Jones Europe, Africa, quantum electronics and applications. Phone: 708-442-5633 Middle East The Society shall aid in promoting close coop- Fax: 708-442-7620 [email protected] eration with other IEEE groups and societies IL, IA, KS, MN, MO, NE, in the form of joint publications, sponsorship ND, SD, WI, OH of meetings, and other forms of information Canada: Manitoba, exchange. Appropriate cooperative efforts will Saskatchewan, Alberta also be undertaken with non-IEEE societies.
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