Silicon Nitride in Silicon Photonics
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THE EFFECTS of DEPOSITION CONDITIONS on the MECHANICAL PROPERTIES of TITANIUM SILICON NITRIDE NANOCOMPOSITE COATINGS by SUO
THE EFFECTS OF DEPOSITION CONDITIONS ON THE MECHANICAL PROPERTIES OF TITANIUM SILICON NITRIDE NANOCOMPOSITE COATINGS by SUO LIU Presented to the Faculty of the Graduate School of The University of Texas at Arlington in Partial Fulfillment of the Requirement for the Degree of MASTER OF SCIENCE IN MATERIALS SCIENCE AND ENGINEERING THE UNIVERSITY OF TEXAS AT ARLINGTON MAY 2015 Copyright © by Suo Liu 2015 All Rights Reserve ii Acknowledgements Foremost, I would like to express my sincere gratitude to my advisor Dr. Efstathios I. Meletis for the continuous support of my graduate study and research, for his patience, motivation, enthusiasm, and immense knowledge. His guidance helped me in all the time of research and writing of this thesis. Besides my advisor, I would like to thank the rest of my thesis committee, Dr. Fuqiang Liu and Dr. Harry F. Tibbals, for their generous help. My sincere thanks also go to Dr. Jessica Mooney for preparation of the samples used in this study, as well as for training me on the optical profilometer. I thank each and every one of my group members for their advice, their help and their friendship. I thank Yishu Wang for his help with XPS. Last but not least, I would like to thank my family: my parents Dao Feng Xiang and Aiping Liu, for supporting me spiritually throughout my life. April 28, 2015 iii Abstract THE EFFECTS OF DEPOSITION CONDITIONS ON THE MECHANICAL PROPERTIES OF TITANIUM SILICON NITRIDE NANOCOMPOSITE COATINGS Suo Liu, M.S. The University of Texas at Arlington, 2015 Supervising Professor: Efstathios I. -
Lecture 17 - Rectangular Waveguides/Photonic Crystals� and Radiative Recombination -Outline�
6.772/SMA5111 - Compound Semiconductors Lecture 17 - Rectangular Waveguides/Photonic Crystals� and Radiative Recombination -Outline� • Dielectric optics (continuing discussion in Lecture 16) Rectangular waveguides� Coupled rectangular waveguide structures Couplers, Filters, Switches • Photonic crystals History: Optical bandgaps and Eli Yablonovich, to the present One-dimensional photonic crystals� Distributed Bragg reflectors� Photonic fibers; perfect mirrors� Two-dimensional photonic crystals� Guided wave optics structures� Defect levels� Three-dimensional photonic crystals • Recombination Processes (preparation for LEDs and LDs) Radiative vs. non-radiative� Relative carrier lifetimes� C. G. Fonstad, 4/03 Lecture 17 - Slide 1 Absorption in semiconductors - indirect-gap band-to-band� •� The phonon modes involved indirect band gap absorption •� Dispersion curves for acoustic and optical phonons Approximate optical phonon energies for several semiconductors Ge: 37 meV (Swaminathan and Macrander) Si: 63 meV GaAs: 36 meV C. G. Fonstad, 4/03� Lecture 15 - Slide 2� Slab dielectric waveguides� •�Nature of TE-modes (E-field has only a y-component). For the j-th mode of the slab, the electric field is given by: - (b -w ) = j j z t E y, j X j (x)Re[ e ] In this equation: w: frequency/energy of the light pw = n = l 2 c o l o: free space wavelength� b j: propagation constant of the j-th mode Xj(x): mode profile normal to the slab. satisfies d 2 X j + 2 2- b 2 = 2 (ni ko j )X j 0 dx where:� ni: refractive index in region i� ko: propagation constant in free space = pl ko 2 o C. G. Fonstad, 4/03� Lecture 17 - Slide 3� Slab dielectric waveguides� •�In approaching a slab waveguide problem, we typically take the dimensions and indices in the various regions and the free space wavelength or frequency of the light as the "givens" and the unknown is b, the propagation constant in the slab. -
Highly Selective Modification of Silicon Oxide Structures Fabricated by an AFM Anodic Oxidation
Korean J. Chem. Eng., 25(2), 386-389 (2008) SHORT COMMUNICATION Highly selective modification of silicon oxide structures fabricated by an AFM anodic oxidation Inhee Choi and Jongheop Yi† School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 151-742, Korea (Received 25 June 2007 • accepted 24 July 2007) Abstract−Anodic oxidation via atomic force microscopy is a promising method for creating submicron-sized silicon dioxide patterns on a local surface. The area patterned by AFM anodic oxidation (AAO) has different chemical prop- erties from the non-patterned area, and thus site-selective modification of patterned surfaces is quite possible. In this study, we combined the AAO with self-assembly method and/or wet chemical etching method for the fabrication of positive and/or negative structures. These locally modified surfaces could be used to the site-selective arrangement and integration of various materials based on a pre-described pattern. Key words: AFM, Anodic Oxidation, Etching, Pattern, Self-assembly INTRODUCTION ification of pre-fabricated silicon oxide structures were successfully achieved by the treatments of organosilanes and etchants. The fabrication of submicron-sized structures, especially those that are silicon-based, has attracted considerable attention due to EXPERIMENTAL the potential applications of such structures, including micro/nano- 1. Materials electromechanical systems (MEMS and NEMS) [1] and miniaturized The following materials and chemicals were used: p-type and devices [2]. For this purpose, a wide variety of fabrication methods <100>-oriented silicon wafers with LPCVD (low pressure chemical have been developed to generate patterns on the nano- and micros- vapor deposition) silicon nitride as a resist, and KOH, IPA (isopropyl cales. -
Chemical Engineering Education Graduate Education in Chemical Engineering
I • N • D • E • X GRADUATE EDUCATION ADVERTISEMENTS Akron, Uni versity of. .......... , .... ... .................. 321 Iowa State Uni versity .................. ... ....... ....... 360 Pensylvania State Uni versity ........................ 395 Alabama, University of ................................ 322 Johns Hopkins University .... .... .. .... .... .......... 361 Pittsburgh, University of .............................. 396 Alabama, Huntsville; Uni versity of.. .... .. ..... 323 Kansas, University of ............................... .... 362 Polytechnic University .. .... ... .... ........... .. ..... .. 397 Alberta, Uni versity of .. ........ .... .. .... ... ..... ..... .. 324 Kansas State University ............... ... ...... ........ 363 Princeton University ....................... .......... .. .. 398 Arizona, University of ....... .. .... .. .... ... .. ... ....... 325 Kentucky, Uni versity of ........................ .. ..... 364 Purdue University .. ........... ... ... ....... ... .... .... ... 399 Arizona State University ..... .. ... ...... ..... ......... 326 Lamar University .. ... ..... ..... ......... ........... .. ..... 430 Rensselaer Polytechnic Institute .... ...... .... ... .. 400 Auburn Uni versity .. ..... .. ... ..... .. .............. .... ... 327 Laval Universite ...................... ........... ...... .. .. 365 Rhode Island, University of.. .... ..... .. ... ..... .. ... 435 Bri gham Young Uni versity .............. ... .. ..... ... 427 Lehigh University .................................. .... ... 366 Rice University -
Silicon Photonics
Silicon Photonics – Trends, Highlights and Challenges Overview Gnyan Ramakrishna, Chair, Technical Committee Photonics, EPS and Technical Leader, Cisco Systems Vipul Patel, Co-Chair, Technical Committee Photonics, EPS and Principal Engineer, Cisco Systems The Cisco Global Cloud Index estimates that total data center traffic (all traffic within or exiting a data center) will reach almost 20 zettabytes per year by 2021, up from 7 zettabytes in 2016. Data center traffic on a global scale will grow at a 25 percent CAGR, with cloud data center traffic growth rate at 27 percent CAGR or 3.3-fold growth from 2016 to 2021. The growth in internet traffic not only accelerates the need for next-generation technology to support higher port density and faster speed transitions but is also accompanied by large physical data center sizes as well as faster connectivity between the data centers. As the data rates and distances to carry high speed data are increasing, the limitations of traditional copper cable and multimode fiber-based solutions are becoming apparent and the industry focus is shifting towards adoption of single-mode fiber-optic solutions. Silicon Photonics is an emerging technology that is bringing a paradigm shift in the field of single mode fiber-optic communications. Silicon Photonics leverages mature CMOS wafer fabrication and packaging infrastructures to deliver high bandwidth, low power transceivers. Even though the current focus of the industry is to develop products for the pluggable market, it is generally accepted that Silicon Photonics will play a key role in the next generation of optics that is needed for co-packaging with ASICs. -
Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007
A national laboratory of the U.S. Department of Energy Office of Energy Efficiency & Renewable Energy National Renewable Energy Laboratory Innovation for Our Energy Future Si Passivation and Chemical Subcontract Report NREL/SR-520-42325 Vapor Deposition of Silicon Nitride November 2007 Final Technical Report March 18, 2007 H.A. Atwater California Institute of Technology Pasadena, California NREL is operated by Midwest Research Institute ● Battelle Contract No. DE-AC36-99-GO10337 Si Passivation and Chemical Subcontract Report NREL/SR-520-42325 Vapor Deposition of Silicon Nitride November 2007 Final Technical Report March 18, 2007 H.A. Atwater California Institute of Technology Pasadena, California NREL Technical Monitor: R. Matson/F. Posey-Eddy Prepared under Subcontract No. AAT-2-31605-01 National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, Colorado 80401-3393 303-275-3000 • www.nrel.gov Operated for the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy by Midwest Research Institute • Battelle Contract No. DE-AC36-99-GO10337 This publication was reproduced from the best available copy Submitted by the subcontractor and received no editorial review at NREL NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States government or any agency thereof. -
Read About the Future of Packaging with Silicon Photonics
The future of packaging with silicon photonics By Deborah Patterson [Patterson Group]; Isabel De Sousa, Louis-Marie Achard [IBM Canada, Ltd.] t has been almost a decade Optics have traditionally been center design. Besides upgrading optical since the introduction of employed to transmit data over long cabling, links and other interconnections, I the iPhone, a device that so distances because light can carry the legacy data center, comprised of many successfully blended sleek hardware considerably more information off-the-shelf components, is in the process with an intuitive user interface that it content (bits) at faster speeds. Optical of a complete overhaul that is leading to effectively jump-started a global shift in transmission becomes more energy significant growth and change in how the way we now communicate, socialize, efficient as compared to electronic transmit, receive, and switching functions manage our lives and fundamentally alternatives when the transmission are handled, especially in terms of next- interact. Today, smartphones and countless length and bandwidth increase. As the generation Ethernet speeds. In addition, other devices allow us to capture, create need for higher data transfer speeds at as 5G ramps, high-speed interconnect and communicate enormous amounts of greater baud rate and lower power levels between data centers and small cells will content. The explosion in data, storage intensifies, the trend is for optics to also come into play. These roadmaps and information distribution is driving move closer to the die. Optoelectronic will fuel multi-fiber waveguide-to-chip extraordinary growth in internet traffic interconnect is now being designed interconnect solutions, laser development, and cloud services. -
In Vitro Comparison of Bioactive Silicon Nitride Laser Claddings on Different Substrates
applied sciences Article In Vitro Comparison of Bioactive Silicon Nitride Laser Claddings on Different Substrates Elia Marin 1,2 , Matteo Zanocco 1,3 , Francesco Boschetto 1,2, Toshiro Yamamoto 2, Narisato Kanamura 2, Wenliang Zhu 1, Bryan J. McEntire 4 , Bhajanjit Sonny Bal 4, Ryutaro Ashida 5, Osam Mazda 3 and Giuseppe Pezzotti 1,3,6,7,* 1 Ceramic Physics Laboratory, Kyoto Institute of Technology, Sakyo-ku, Matsugasaki, Kyoto 606-8585, Japan; [email protected] (E.M.); [email protected] (M.Z.); [email protected] (F.B.); [email protected] (W.Z.) 2 Department of Dental Medicine, Graduate School of Medical Science, Kyoto Prefectural University of Medicine, Kamigyo-ku, Kyoto 602-8566, Japan; [email protected] (T.Y.); [email protected] (N.K.) 3 Department of Immunology, Graduate School of Medical Science, Kyoto Prefectural University of Medicine, Kamigyo-ku, 465 Kajii-cho, Kawaramachi dori, Kyoto 602-0841, Japan; [email protected] 4 SINTX Technologies Corporation, 1885 West 2100 South, Salt Lake City, UT 84119, USA; [email protected] (B.J.M.); [email protected] (B.S.B.) 5 Shinsei, Co., Shijohei Kawanishi Rikobo, Kyoto 610-0101, Japan; [email protected] 6 Department of Orthopedic Surgery, Tokyo Medical University, 6-7-1 Nishi-Shinjuku, Shinjuku-ku, Tokyo 160-0023, Japan 7 The Center for Advanced Medical Engineering and Informatics, Osaka University, Yamadaoka, Suita, Osaka 565-0871, Japan * Correspondence: [email protected] Received: 9 November 2020; Accepted: 14 December 2020; Published: 17 December 2020 Abstract: The performance, durability, and bio-integration of functional biomedical coatings can be enhanced by changing or improving their substrate properties. -
Lecture 26 Dielectric Slab Waveguides
Lecture 26 Dielectric Slab Waveguides In this lecture you will learn: • Dielectric slab waveguides •TE and TM guided modes in dielectric slab waveguides ECE 303 – Fall 2005 – Farhan Rana – Cornell University TE Guided Modes in Parallel-Plate Metal Waveguides r E()rr = yˆ E sin()k x e− j kz z x>0 o x x Ei Ei r r Ey k E r k i r kr i H Hi i z ε µo Hr r r ki = −kx xˆ + kzzˆ kr = kx xˆ + kzzˆ Guided TE modes are TE-waves bouncing back and fourth between two metal plates and propagating in the z-direction ! The x-component of the wavevector can have only discrete values – its quantized m π k = where : m = 1, 2, 3, x d KK ECE 303 – Fall 2005 – Farhan Rana – Cornell University 1 Dielectric Waveguides - I Consider TE-wave undergoing total internal reflection: E i x ε1 µo r k E r i r kr H θ θ i i i z r H r ki = −kx xˆ + kzzˆ r kr = kx xˆ + kzzˆ Evanescent wave ε2 µo ε1 > ε2 r E()rr = yˆ E e− j ()−kx x +kz z + yˆ ΓE e− j (k x x +kz z) 2 2 2 x>0 i i kz + kx = ω µo ε1 Γ = 1 when θi > θc When θ i > θ c : kx = − jα x r E()rr = yˆ T E e− j kz z e−α x x 2 2 2 x<0 i kz − α x = ω µo ε2 ECE 303 – Fall 2005 – Farhan Rana – Cornell University Dielectric Waveguides - II x ε2 µo Evanescent wave cladding Ei E ε1 µo r i r k E r k i r kr i core Hi θi θi Hi ε1 > ε2 z Hr cladding Evanescent wave ε2 µo One can have a guided wave that is bouncing between two dielectric interfaces due to total internal reflection and moving in the z-direction ECE 303 – Fall 2005 – Farhan Rana – Cornell University 2 Dielectric Slab Waveguides W 2d Assumption: W >> d x cladding y core -
Crystalline Whispering Gallery Mode Resonators in Optics and Photonics
3 Crystalline Whispering Gallery Mode Resonators in Optics and Photonics Lute Maleki, Vladimir S. Ilchenko, Anatoliy A. Savchenkov, and Andrey B. Matsko OEwaves Inc. Contents 3.1 Introduction ........................................................................................................................134 3.2 Fabrication Technique ....................................................................................................... 135 3.3 Coupling Techniques ......................................................................................................... 137 3.3.1 Critical Coupling .................................................................................................... 137 3.3.2 Prism ........................................................................................................................ 139 3.3.3 Angle-Cut Fiber ...................................................................................................... 142 3.3.4 Fiber Taper .............................................................................................................. 142 3.3.5 Planar Coupling ..................................................................................................... 143 3.4 Modal Structure and Spectrum Engineering ................................................................ 144 3.4.1 The Spectrum and the Shape of the Resonator ................................................. 145 3.4.2 White Light Resonators ........................................................................................ -
Roadmap on Silicon Photonics
Home Search Collections Journals About Contact us My IOPscience Roadmap on silicon photonics This content has been downloaded from IOPscience. Please scroll down to see the full text. View the table of contents for this issue, or go to the journal homepage for more Download details: IP Address: 152.78.236.131 This content was downloaded on 24/06/2016 at 13:44 Please note that terms and conditions apply. Journal of Optics J. Opt. 18 (2016) 073003 (20pp) doi:10.1088/2040-8978/18/7/073003 Roadmap Roadmap on silicon photonics David Thomson1,10,11, Aaron Zilkie2, John E Bowers3, Tin Komljenovic3, Graham T Reed1, Laurent Vivien4, Delphine Marris-Morini4, Eric Cassan4, Léopold Virot5,6, Jean-Marc Fédéli5,6, Jean-Michel Hartmann5,6, Jens H Schmid7, Dan-Xia Xu7, Frédéric Boeuf8, Peter O’Brien9, Goran Z Mashanovich1 and M Nedeljkovic1 1 Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK 2 Rockley Photonics Inc., 234 E. Colorado Blvd, Suite 600, Pasadena, CA, 91101, USA 3 University of California, Santa Barbara, Electrical and Computer Engineering Department, Santa Barbara, CA 93106, USA 4 Centre for Nanoscience and Nanotechnology (C2N), CNRS, Université Paris Sud, Université Paris- Saclay, France 5 University of Grenoble Alpes, F-38000 Grenoble, France 6 CEA, LETI, Minatec Campus, 17 rue des Martyrs, F-38054 Grenoble, France 7 Information and Communications Technologies Portfolio, National Research Council of Canada, 1200 Montreal Road, Ottawa, Ontario K1A 0R6, Canada 8 STMicroelectronics (Crolles 2) SAS, 850 Rue Jean Monnet, BP 16, Crolles Cedex, France 9 Tyndall National Institute, University College Cork, Cork, Ireland E-mail: [email protected] Received 18 September 2015 Accepted for publication 24 February 2016 Published 24 June 2016 Abstract Silicon photonics research can be dated back to the 1980s. -
Inverse Design for Silicon Photonics: from Iterative Optimization Algorithms to Deep Neural Networks
applied sciences Review Inverse Design for Silicon Photonics: From Iterative Optimization Algorithms to Deep Neural Networks Simei Mao 1,2, Lirong Cheng 1,2 , Caiyue Zhao 1,2, Faisal Nadeem Khan 2, Qian Li 3 and H. Y. Fu 1,2,* 1 Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China; [email protected] (S.M.); [email protected] (L.C.); [email protected] (C.Z.) 2 Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China; [email protected] 3 School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China; [email protected] * Correspondence: [email protected]; Tel.: +86-755-3688-1498 Abstract: Silicon photonics is a low-cost and versatile platform for various applications. For design of silicon photonic devices, the light-material interaction within its complex subwavelength geometry is difficult to investigate analytically and therefore numerical simulations are majorly adopted. To make the design process more time-efficient and to improve the device performance to its physical limits, various methods have been proposed over the past few years to manipulate the geometries of silicon platform for specific applications. In this review paper, we summarize the design methodologies for silicon photonics including iterative optimization algorithms and deep neural networks. In case of iterative optimization methods, we discuss them in different scenarios in the sequence of increased degrees of freedom: empirical structure, QR-code like structure and irregular structure. We also review inverse design approaches assisted by deep neural networks, which generate multiple devices Citation: Mao, S.; Cheng, L.; Zhao, with similar structure much faster than iterative optimization methods and are thus suitable in C.; Khan, F.N.; Li, Q.; Fu, H.Y.