Improving Solar Cell Efficiency Using Photonic Band-Gap Materials

Total Page:16

File Type:pdf, Size:1020Kb

Improving Solar Cell Efficiency Using Photonic Band-Gap Materials ARTICLE IN PRESS Solar Energy Materials & Solar Cells 91 (2007) 1599–1610 www.elsevier.com/locate/solmat Improving solar cell efficiency using photonic band-gap materials Marian Florescua,b,Ã, Hwang Leea, Irina Puscasuc, Martin Prallec, Lucia Florescua,b, David Z. Tingb, Jonathan P. Dowlinga aDepartment of Physics and Astronomy, Hearne Institute for Theoretical Physics, Louisiana State University, 202 Nicholson Hall, Baton Rouge, LA 70803, USA bJet Propulsion Laboratory, California Institute of Technology, Mail Stop T1714 106, 4800 Oak Grove Drive, Pasadena, CA 91109, USA cIon Optics Inc., 411 Waverley Oaks Rd. Suite 144, Waltham, MA 02452, USA Received 31 October 2006; received in revised form 2 May 2007; accepted 2 May 2007 Available online 29 June 2007 Abstract The potential of using photonic crystal structures for realizing highly efficient and reliable solar-cell devices is presented. We show that due their ability to modify the spectral and angular characteristics of thermal radiation, photonic crystals emerge as one of the leading candidates for frequency- and angular-selective radiating elements in thermophotovoltaic devices. We show that employing photonic crystal-based angle- and frequency-selective absorbers facilitates a strong enhancement of the conversion efficiency of solar cell devices without using concentrators. r 2007 Elsevier B.V. All rights reserved. Keywords: Photonic band-gap materials; Thermophotovoltaics; Solar cells 1. Introduction coupling between the absorber and the cell (Fig. 1). However, any approach to solar-cell efficiency improve- Photovoltaic (PV) solar energy conversion systems (or ment that does not address this fundamental wavelength- solar cells) are the most widely used power systems. band mismatch, can achieve at most around 30% efficiency However, these devices suffer of very low conversion [1]. Moreover, this can be achieved only for concentrated efficiency. This is due to the wavelength mismatch between radiation, which requires an additional optical device, the narrow wavelength band associated with the semicon- which is not desirable in applications where the mass is a ductor energy gap and the broad band of the (blackbody) critical concern. emission curve of the Sun. The power loss is associated This article outlines novel approaches to the design of with both long-wavelength photons that do not have highly efficient solar cells using photonic band-gap (PBG) enough energy to excite electron–hole pairs across the materials [2,3]. These are a new class of periodic materials energy gap (leading to a 24% loss in silicon, for instance) that allow precise control of all electromagnetic wave and short-wavelength photons that excite pairs with energy properties [4–6]. A PBG occurs in a periodic dielectric or above the gap, which thereby waste the extra kinetic energy metallic media, similarly to the electronic band gap in as heat (giving a 32% loss in silicon). The efficiency of the semiconductor crystals. In the spectral range of the PBG, thermophotovoltaic (TPV) system may be increased by the electromagnetic radiation light cannot propagate. The recycling the photons with frequency larger than the solar ability to tailor the properties of the electromagnetic cell band-gap frequency, by using a spectrally dependent radiation in a prescribed manner through the engineering of the photonic dispersion relation enables the design of systems that accurately control the emission and absorp- ÃCorresponding author. Jet Propulsion Laboratory, California Institute of Technology, Mail Stop T1714 106, 4800 Oak Grove Drive, Pasadena, tion of light. This gives rises to new phenomena including CA 91109, USA. the inhibition and enhancement of the spontaneous E-mail address: [email protected] (M. Florescu). emission [3], strong localization of light [2], formation of 0927-0248/$ - see front matter r 2007 Elsevier B.V. All rights reserved. doi:10.1016/j.solmat.2007.05.001 ARTICLE IN PRESS 1600 M. Florescu et al. / Solar Energy Materials & Solar Cells 91 (2007) 1599–1610 emission of radiation is resonantly enhanced up to the black-body limit. The ability of the photonic crystals to funnel the thermal radiation into a prescribed spectral range is illustrated in Fig. 2, which shows a comparison between the intensity emitted by a photonic crystal sample when electrically heated, which reaches a temperature of 420 when the electrically heated with an input power of 135 mW (black curve), and two blackbody systems, one kept at the same temperature as the photonic crystal at the expense of using a higher input power (315 mW) and a second one exposed at the same input power as the photonic crystal sample, but having a lower temperature ð273:4Þ. We notice in the case of the photonic crystal sample that by eliminating the emission in certain frequency bands (corresponding to the spectral range of the PBG), the emission is enhanced in the spectral region corresponding to the allowed bands and, with the same input power, the photonic crystal reaches a Fig. 1. Schematic of a TPV energy conversion scheme. An intermediate higher temperature than a blackbody. This is solely due to absorber is heated by the Sun’s thermal radiation. The photovoltaic (PV) cell is illuminated by radiation from emitter transmitted by a filter. the funneling of the thermal radiation from the forbidden spectral range (the orange area in Fig. 2) into the allowed spectral range (the brown area in Fig. 2). Therefore, the atom–photon bound states [7], quantum interference heated photonic crystal emitter achieves thermal equili- effects in spontaneous emission [8], single atom and brium at a higher temperature than would otherwise be collective atomic switching behavior by coherent resonant possible. These facts suggests the possibility to leverage the pumping, and atomic inversion without fluctuations [9]. funneling properties of photonic crystals to improve the These remarkable phenomena have attracted a consider- spectral coupling of an emitter into the acceptance band of able interest for important technological applications, such a PV cell. as low-threshold micro-lasers [10,11], ultra-fast all-optical switches, and micro-transistors [12–14]. The modifications of the spontaneous emission rate of atoms inside the photonic crystal structure determine, in turn, important alterations of thermal radiative pro- cesses. Thermal radiation is just spontaneous emission thermally driven and in thermal equilibrium with its material surroundings. In 1999, Cornelius and Dowling suggested the use of PBG materials for the modification of thermal emission [15]. They explored two alternative approaches: a method based on a passive lossless PBG thin-film coating over the absorber, and an approach which uses an active PBG material made out of an absorptive medium. Thermal emission modification has been experi- mentally demonstrated in 2000, using a thin slab of 3D photonic crystal on a silicon substrate [16]. Pralle et al. demonstrated a thermally excited, narrow-band, mid- infrared source using a PBG technique [17]. Recently, researchers at Sandia Labs demonstrated a high-efficiency TPV system using tungsten photonic crystals [18–20]. These studies suggest that by optimizing the coupling of the multi-mode radiation field of a PBG material and a spatially extended collection of atomic or electronic Fig. 2. Spectral funneling of the thermal radiation by photonic crystals. emitters, it is possible to achieve dramatic modifications By designing a photonic band gap in prescribed frequency region of the of Planck’s blackbody radiation spectrum [15,21].In photonic crystal emission spectrum, the structure becomes unable to the PBG spectral range the thermal emission of radiation radiate at these frequencies and the corresponding energy is re-radiated in the allowed spectral range. As a consequence, the intensity of the is strongly suppressed, whereas for specific frequencies in blackbody emission at these frequencies increases, and the photonic the allowed photonic bands, that correspond to transmis- crystal emitter radiates the same power as it would a blackbody sion resonances of the photonic crystal, the thermal maintained at a higher temperature. ARTICLE IN PRESS M. Florescu et al. / Solar Energy Materials & Solar Cells 91 (2007) 1599–1610 1601 We present a design of highly efficient solar cells using coating over a many-wavelength-thick substrate. The PBG materials as intermediary between the Sun and the PV radiation is emitted from the substrate and passes through cells. We predict limiting conversion efficiency of around the passive photonic crystal filter and then is emitted into 60%. We propose two approaches to achieve this. The first vacuum. The absorbance A is given by energy conserva- approach is to couple broadband solar radiation into a tion, namely, A þ T þ R ¼ 1, where R and T are PBG material, engineered to re-emit the solar radiation reflectance and transmittance, respectively. The absorbance into a narrow frequency band corresponding to the is unity if the source is a perfect blackbody. Finding the semiconductor energy gap. In this way, power loss due to absorbance is equivalent to finding the thermal emittance photons of wavelength too much above or below the gap is E, since using Kirchhoff’s second law, the ratio of the eliminated. Another approach is intended to eliminate the thermal emittance to the absorbance is the same, indepen- roadblocks in the design of TPV systems based on non- dent of the nature of the material. Consequently, it is concentrated radiation, and makes use of a photonic possible to then compute E by matrix transfer techniques crystal-based angle-selective absorber. The selective absor- [15,22]. Once E is obtained, multiplication by the Planck ber has the property of absorbing only certain parts of the power spectrum gives the power spectrum of the PBG whole solar spectrum. If the absorber can absorb solar emitter pTHðo; TÞ in terms of the emittance EðoÞ and radiation whose frequency is above the solar cell band-gap blackbody spectrum pBBðo; TÞ, as given by frequency, the TPV efficiency of 45% can be achieved by pTHðo; TÞ¼ ðoÞpBBðo; TÞ.
Recommended publications
  • Wide Band Gap Materials: Revolution in Automotive Power Electronics
    20169052 16mm Wide Band Gap Materials: Revolution in Automotive Power Electronics Luca Bartolomeo 1) Luigi Abbatelli 2) Michele Macauda 2) Filippo Di Giovanni 2) Giuseppe Catalisano 2) Miroslav Ryzek 3) Daniel Kohout 3) 1) STMicroelectronics Japan, Shinagawa INTERCITY Tower A, 2-15-1, Konan, Minato-ku, 108-6017 Tokyo, Japan (E-mail: [email protected]) 2) STMicroelectronics , Italy 3) STMicroelectronics , Czech Republic ④④④ ④④④ Presented at the EVTeC and APE Japan on May 26, 2016 ABSTRACT : The number of Electric and Hybrid vehicles on the roads is increasing year over year. The role of power electronics is of paramount importance to improve their efficiency, keeping lighter and smaller systems. In this paper, the authors will specifically cover the use of Wide Band Gap (WBG) materials in Electric and Hybrid vehicles. It will be shown how SiC MOSFETs bring significant benefits compared to standard IGBTs silicon technology, in both efficiency and form factor. Comparison of the main electrical characteristics, between SiC-based and IGBT module, were simulated and validated by experimental tests in a real automotive environment. KEY WORDS : SiC, Wide Band Gap, IGBT, Power Module 1. INTRODUCTION When considering power transistors in the high voltage range Nowadays, an increased efficiency demand is required in (above 600V), SiC MOSFETs are an excellent alternative to the power electronics applications to have lighter and smaller standard silicon devices: they guarantee lower RON*Area values systems and to improve the range of new Electric (EV) and compared to the latest silicon-based Super-Junction MOSFETs, Hybrid vehicles (HEV). There is an on-going revolution in the especially in high temperature environment (1).
    [Show full text]
  • Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach
    Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach H. J. Xiang1,2*, Bing Huang2, Erjun Kan3, Su-Huai Wei2, X. G. Gong1 1 Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, P. R. China 2National Renewable Energy Laboratory, Golden, Colorado 80401, USA 3Department of Applied Physics, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People’s Republic of China e-mail: [email protected] Abstract Diamond silicon (Si) is the leading material in current solar cell market. However, diamond Si is an indirect band gap semiconductor with a large energy difference (2.4 eV) between the direct gap and the indirect gap, which makes it an inefficient absorber of light. In this work, we develop a novel inverse-band structure design approach based on the particle swarming optimization algorithm to predict the metastable Si phases with better optical properties than diamond Si. Using our new method, we predict a cubic Si20 phase with quasi- direct gaps of 1.55 eV, which is a promising candidate for making thin-film solar cells. PACS: 71.20.-b,42.79.Ek,78.20.Ci,88.40.jj 1 Due to the high stability, high abundance, and the existence of an excellent compatible oxide (SiO2), Si is the leading material of microelectronic devices. Currently, the majority of solar cells fabricated to date have also been based on diamond Si in monocrystalline or large- grained polycrystalline form [1]. There are mainly two reasons for this: First, Si is the second most abundant element in the earth's crust; Second, the Si based photovoltaics (PV) industry could benefit from the successful Si based microelectronics industry.
    [Show full text]
  • CSE- Module-3: SEMICONDUCTOR LIGHT EMITTING DIODE :LED (5Lectures)
    CSE-Module- 3:LED PHYSICS CSE- Module-3: SEMICONDUCTOR LIGHT EMITTING DIODE :LED (5Lectures) Light Emitting Diodes (LEDs) Light Emitting Diodes (LEDs) are semiconductors p-n junction operating under proper forward biased conditions and are capable of emitting external spontaneous radiations in the visible range (370 nm to 770 nm) or the nearby ultraviolet and infrared regions of the electromagnetic spectrum General Structure LEDs are special diodes that emit light when connected in a circuit. They are frequently used as “pilot light” in electronic appliances in to indicate whether the circuit is closed or not. The structure and circuit symbol is shown in Fig.1. The two wires extending below the LED epoxy enclose or the “bulb” indicate how the LED should be connected into a circuit or not. The negative side of the LED is indicated in two ways (1) by the flat side of the bulb and (2) by the shorter of the two wires extending from the LED. The negative lead should be connected to the negative terminal of a battery. LEDs operate at relative low voltage between 1 and 4 volts, and draw current between 10 and 40 milliamperes. Voltages and Fig.-1 : Structure of LED current substantially above these values can melt a LED chip. The most important part of a light emitting diode (LED) is the semiconductor chip located in the centre of the bulb and is attached to the 1 CSE-Module- 3:LED top of the anvil. The chip has two regions separated by a junction. The p- region is dominated by positive electric charges, and the n-region is dominated by negative electric charges.
    [Show full text]
  • Encapsulation of Organic and Perovskite Solar Cells: a Review
    Review Encapsulation of Organic and Perovskite Solar Cells: A Review Ashraf Uddin *, Mushfika Baishakhi Upama, Haimang Yi and Leiping Duan School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia; [email protected] (M.B.U.); [email protected] (H.Y.); [email protected] (L.D.) * Correspondence: [email protected] Received: 29 November 2018; Accepted: 21 January 2019; Published: 23 January 2019 Abstract: Photovoltaic is one of the promising renewable sources of power to meet the future challenge of energy need. Organic and perovskite thin film solar cells are an emerging cost‐effective photovoltaic technology because of low‐cost manufacturing processing and their light weight. The main barrier of commercial use of organic and perovskite solar cells is the poor stability of devices. Encapsulation of these photovoltaic devices is one of the best ways to address this stability issue and enhance the device lifetime by employing materials and structures that possess high barrier performance for oxygen and moisture. The aim of this review paper is to find different encapsulation materials and techniques for perovskite and organic solar cells according to the present understanding of reliability issues. It discusses the available encapsulate materials and their utility in limiting chemicals, such as water vapour and oxygen penetration. It also covers the mechanisms of mechanical degradation within the individual layers and solar cell as a whole, and possible obstacles to their application in both organic and perovskite solar cells. The contemporary understanding of these degradation mechanisms, their interplay, and their initiating factors (both internal and external) are also discussed.
    [Show full text]
  • Thin Film Cdte Photovoltaics and the U.S. Energy Transition in 2020
    Thin Film CdTe Photovoltaics and the U.S. Energy Transition in 2020 QESST Engineering Research Center Arizona State University Massachusetts Institute of Technology Clark A. Miller, Ian Marius Peters, Shivam Zaveri TABLE OF CONTENTS Executive Summary .............................................................................................. 9 I - The Place of Solar Energy in a Low-Carbon Energy Transition ...................... 12 A - The Contribution of Photovoltaic Solar Energy to the Energy Transition .. 14 B - Transition Scenarios .................................................................................. 16 I.B.1 - Decarbonizing California ................................................................... 16 I.B.2 - 100% Renewables in Australia ......................................................... 17 II - PV Performance ............................................................................................. 20 A - Technology Roadmap ................................................................................. 21 II.A.1 - Efficiency ........................................................................................... 22 II.A.2 - Module Cost ...................................................................................... 27 II.A.3 - Levelized Cost of Energy (LCOE) ....................................................... 29 II.A.4 - Energy Payback Time ........................................................................ 32 B - Hot and Humid Climates ...........................................................................
    [Show full text]
  • The Band Gap of Silicon
    Norton 0 The Band Gap of Silicon Matthew Norton, Erin Stefanik, Ryan Allured, and Drew Sulski Norton 1 Abstract This experiment was designed to find the band gap of silicon as well as the charge of an electron. A transistor was heated to various temperatures using a hot plate. The resistance was measured over the resistor and transistor in the circuit. In performing this experiment, it was found that the band gap of silicon was (1.10 ± 0.08) eV. In performing this experiment, it was also found that the charge of an electron was (1.77 ± 0.20) × 10 −19 C. Introduction When a substance is placed under the influence of an electric field, it can portray insulating, semi-conducting, semi-metallic, or metallic properties. Every crystalline structure has electrons that occupy energy bands. In a semiconductor, there is a gap in energy between valence band and the bottom of the conduction band. There are no allowed energy states for the electron within the energy gap. At absolute zero, all the electrons have energies within the valence band and the material it is insulating. As the temperature increases electrons gain enough energy to occupy the energy levels in the conduction band. The current through a transistor is given by the equation, qV I= I e kT − 1 0 (1) where I0 is the maximum current for a large reverse bias voltage, q is the charge of the electron, k is the Boltzmann constant, and T is the temperature in Kelvin. As long as V is not too large, the current depends only on the number of minority carriers in the conduction band and the rate at which they diffuse.
    [Show full text]
  • Thermal Management of Concentrated Multi-Junction Solar Cells with Graphene-Enhanced Thermal Interface Materials
    applied sciences Article Thermal Management of Concentrated Multi-Junction Solar Cells with Graphene-Enhanced Thermal Interface Materials Mohammed Saadah 1,2, Edward Hernandez 2,3 and Alexander A. Balandin 1,2,3,* 1 Nano-Device Laboratory (NDL), Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521, USA; [email protected] 2 Phonon Optimized Engineered Materials (POEM) Center, Bourns College of Engineering, University of California, Riverside, CA 92521, USA; [email protected] 3 Materials Science and Engineering Program, University of California, Riverside, CA 92521, USA * Correspondence: [email protected]; Tel.: +1-951-827-2351 Academic Editor: Philippe Lambin Received: 20 May 2017; Accepted: 3 June 2017; Published: 7 June 2017 Abstract: We report results of experimental investigation of temperature rise in concentrated multi-junction photovoltaic solar cells with graphene-enhanced thermal interface materials. Graphene and few-layer graphene fillers, produced by a scalable environmentally-friendly liquid-phase exfoliation technique, were incorporated into conventional thermal interface materials. Graphene-enhanced thermal interface materials have been applied between a solar cell and heat sink to improve heat dissipation. The performance of the multi-junction solar cells has been tested using an industry-standard solar simulator under a light concentration of up to 2000 suns. It was found that the application of graphene-enhanced thermal interface materials allows one to reduce the solar cell temperature and increase the open-circuit voltage. We demonstrated that the use of graphene helps in recovering a significant amount of the power loss due to solar cell overheating. The obtained results are important for the development of new technologies for thermal management of concentrated photovoltaic solar cells.
    [Show full text]
  • Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency
    Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency Isik C. Kizilyalli, Eric P. Carlson, Daniel W. Cunningham, Joseph S. Manser, Yanzhi “Ann” Xu, Alan Y. Liu March 13, 2018 United States Department of Energy Washington, DC 20585 TABLE OF CONTENTS Abstract 2 Introduction 2 Technical Opportunity 2 Application Space 4 Evolution of ARPA-E’s Focused Programs in Power Electronics 6 Broad Exploration of Power Electronics Landscape - ADEPT 7 Solar Photovoltaics Applications – Solar ADEPT 10 Wide-Bandgap Materials and Devices – SWITCHES 11 Addressing Material Challenges - PNDIODES 16 System-Level Advances - CIRCUITS 18 Impacts 21 Conclusions 22 Appendix: ARPA-E Power Electronics Projects 23 ABSTRACT The U.S. Department of Energy’s Advanced Research Project Agency for Energy (ARPA-E) was established in 2009 to fund creative, out-of-the-box, transformational energy technologies that are too early for private-sector investment at make-or break points in their technology development cycle. Development of advanced power electronics with unprecedented functionality, efficiency, reliability, and reduced form factor are required in an increasingly electrified world economy. Fast switching power semiconductor devices are the key to increasing the efficiency and reducing the size of power electronic systems. Recent advances in wide band-gap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new genera- tion of power semiconductor devices that far exceed the performance of silicon-based devices. Past ARPA-E programs (ADEPT, Solar ADEPT, and SWITCHES) have enabled innovations throughout the power electronics value chain, especially in the area of WBG semiconductors. The two recently launched programs by ARPA-E (CIRCUITS and PNDIODES) continue to investigate the use of WBG semiconductors in power electronics.
    [Show full text]
  • The Field-Effect Transistor (FET) in a Field-Effect Transistor, an Applied Voltage Is Used to Change the Conductivity of an Electron Or “Hole” Channel
    The Field-Effect Transistor (FET) In a field-effect transistor, an applied voltage is used to change the conductivity of an electron or “hole” channel. To understand the operation of a FET, we first should understand just a little about the chemistry and physics of semiconductor devices. Let us consider, for simplicity, only silicon devices. Some Background (this section is Explore More!...will not be tested) Silicon (Si) is an element of the periodic table that contains 4 electrons in its “outer shell”. Pure silicon can arrange itself in a diamond cubic crystal structure (ref: http://en.wikipedia.org/wiki/Band_gap) where it shares its electrons with other Si atoms. The valance band is nominally full and the conduction band is nominally empty, thus resulting in an insulating material. Within this structure, Si forms an insulating material with a band gap energy of 1.11 electron volts (1.6e-19J, the amount of energy needed to move one electron across a one volt potential) separating the valance band from the conduction band. Figure 1: Electron band gap of an undoped (intrinsic) semiconductor. When doped (or infused) with an element that contains 5 electrons in its outer shell (say, for instance, nitrogen, N), this element will displace one silicon atom. Only using 4 of its 5 outer-shell electrons to form tight bonds with the neighboring Si atoms, nitrogen has one electron that is only loosely bound to the lattice. An electron may be more easily excited into the conduction band (the dopant provides a smaller band gap). With enough dopants (often 1 doping atom per 1 thousand to 1 billion Si atoms) and energy to excite electrons into the conduction band, the material becomes less like an insulator and more like a conductor.
    [Show full text]
  • An Inorganic Light-Emitting Diode (LED; Figure 1) Is a Diode Which Is Forward-Biased (Switched On)
    Figure 1: a) examples of LEDs; b) circuit symbol An inorganic Light-Emitting Diode (LED; Figure 1) is a diode which is forward-biased (switched on). By doing so electrons are able to recombine with holes within the vicinity of the junction (depletion region) thereby releasing energy in the form of light (photons) as shown in Figure 2 a). One basic requirement for the used semiconductor is to be a direct band gap semiconductor. This means that the maximum of the valence-band and the minimum of the conduction band meet at the same k-value. Figure 2 b) and c) show the 2 types of semiconductors. Since Si is an indirect band-gap semiconductor no photons are emitted by Si-based p-n-junctions. Figure 2: a) forward biased p-n-junction b) indirect band-gap semiconductor; c)direct Figure 3: a) band diagram in a heterojunction LED; b) schematic display of a double heterostructure LED Figure 3 a) shows the band diagram of an improved LED where a heterojuncion is used. The figure shows that the central material (where the light is generated) is surrounded by a region with a higher energy gap. This allows confining the injected charge carriers inside the un-doped central region with a lower band-gap thereby increasing the emissive radiation rate. Figure 3 b) shows the configuration of a double heterorstructure LED. This type of confinement is also utilized for semiconductor lasers. The usage of a heterojunction is further advantageous to obtain a higher output of light out of the LED since the generated photons don’t have enough energy to generate an electron-hole pair within the semiconductor with wider band-gap.
    [Show full text]
  • (2020) How Solar Cell Efficiency Is Governed by the Αμτ Product
    PHYSICAL REVIEW RESEARCH 2, 023109 (2020) How solar cell efficiency is governed by the αμτ product Pascal Kaienburg ,1,2,* Lisa Krückemeier ,1 Dana Lübke ,1 Jenny Nelson ,3 Uwe Rau,1 and Thomas Kirchartz 1,4,† 1IEK5-Photovoltaics, Forschungszentrum Jülich, 52425 Jülich, Germany 2Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, OX1 3PU Oxford, United Kingdom 3Department of Physics and Centre for Plastic Electronics, Imperial College London, London SW7 2AZ, United Kingdom 4Faculty of Engineering and CENIDE, University of Duisburg-Essen, Carl-Benz-Strasse 199, 47057 Duisburg, Germany (Received 18 September 2019; accepted 15 March 2020; published 30 April 2020) The interplay of light absorption, charge-carrier transport, and charge-carrier recombination determines the performance of a photovoltaic absorber material. Here we analyze the influence on the solar-cell efficiency of the absorber material properties absorption coefficient α, charge-carrier mobility μ, and charge-carrier lifetime τ, for different scenarios. We combine analytical calculations with numerical drift-diffusion simulations to understand the relative importance of these three quantities. Whenever charge collection is a limiting factor, the αμτ product is a good figure of merit (FOM) to predict solar-cell efficiency, while for sufficiently high mobilities, the relevant FOM is reduced to the ατ product. We find no fundamental difference between simulations based on monomolecular or bimolecular recombination, but strong surface-recombination affects the maximum efficiency in the high-mobility limit. In the limiting case of high μ and high surface-recombination velocity S,theα/S ratio is the relevant FOM. Subsequently, we apply our findings to organic solar cells which tend to suffer from inefficient charge-carrier collection and whose absorptivity is influenced by interference effects.
    [Show full text]
  • Light-Emitting Diodes (Leds) Teacher Materials (Includes Student Materials)
    Light-Emitting Diodes (LEDs) Teacher Materials (includes Student Materials) Index 2 Curriculum Suggestions 3 Sample Lesson plans 4 Light Emitting Diodes Overview 6 More Information on Light Emitting Diodes 7 Demonstration 1 - Electron Flow within an Energy Band 17 Demonstration 2 -Changing Conductivity By Adding or Removing Electrons 20 Demonstration 3 -Investigating Electronic Properties of a p-n Junction 24 Demonstration 4 -Relationship Between Composition and Wavelength of LEDs 27 Student Follow- Up Questions 30 Investigations: What makes graphite a good conductor Teacher Version 34 Student Version 35 Investigations: The Crystal Structure of Light Emitting Diodes Teacher Version 36 Student Version 37 Experiments Teacher Version 39 Student Version 40 Review Materials Teacher Version 43 Student Version 48 Assessment Teacher Version 52 Student Version 57 Light Emitting Diodes (LEDs) Curriculum Suggestions Sample Lesson Plan LED Overview Light Emitting Diodes Demonstration 1 (Instructor copy) Demonstration 2 (Instructor copy) Demonstration 3 (Instructor copy) Demonstration 4 (Instructor copy) Student Questions after Demonstration 4 Investigation 1 (Student copy) Investigation 1 (Instructor copy) Investigation 2 (Student copy) Investigation 2 (Instructor copy) Experiment 1 (Student copy) Experiment 1 (Instructor copy) LED Review Questions (Student copy) LED Review Questions (Instructor copy) LED Assessment (Student copy) LED Assessment (Instructor copy) 2 CURRICULUM SUGGESTIONS TOPICS SOLIDS QUANTUM MECHANICS SEMICONDUCTORS Bonding Electron Configurations p-n Junctions Metals Periodic Table LEDs Metallic Bonding Periodic Relationships (Trends) (Valence-Bond Model) Band Theory Solid Solutions OVERVIEW This module would complement a unit on atomic structure and periodicity. Typically, is introduced in two chapters: one dealing with the nature of light and its use to determine the electronic structure of atoms; and another that relates this electronic structure to the periodic table and trends in properties.
    [Show full text]