Improving Solar Cell Efficiency Using Photonic Band-Gap Materials
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Wide Band Gap Materials: Revolution in Automotive Power Electronics
20169052 16mm Wide Band Gap Materials: Revolution in Automotive Power Electronics Luca Bartolomeo 1) Luigi Abbatelli 2) Michele Macauda 2) Filippo Di Giovanni 2) Giuseppe Catalisano 2) Miroslav Ryzek 3) Daniel Kohout 3) 1) STMicroelectronics Japan, Shinagawa INTERCITY Tower A, 2-15-1, Konan, Minato-ku, 108-6017 Tokyo, Japan (E-mail: [email protected]) 2) STMicroelectronics , Italy 3) STMicroelectronics , Czech Republic ④④④ ④④④ Presented at the EVTeC and APE Japan on May 26, 2016 ABSTRACT : The number of Electric and Hybrid vehicles on the roads is increasing year over year. The role of power electronics is of paramount importance to improve their efficiency, keeping lighter and smaller systems. In this paper, the authors will specifically cover the use of Wide Band Gap (WBG) materials in Electric and Hybrid vehicles. It will be shown how SiC MOSFETs bring significant benefits compared to standard IGBTs silicon technology, in both efficiency and form factor. Comparison of the main electrical characteristics, between SiC-based and IGBT module, were simulated and validated by experimental tests in a real automotive environment. KEY WORDS : SiC, Wide Band Gap, IGBT, Power Module 1. INTRODUCTION When considering power transistors in the high voltage range Nowadays, an increased efficiency demand is required in (above 600V), SiC MOSFETs are an excellent alternative to the power electronics applications to have lighter and smaller standard silicon devices: they guarantee lower RON*Area values systems and to improve the range of new Electric (EV) and compared to the latest silicon-based Super-Junction MOSFETs, Hybrid vehicles (HEV). There is an on-going revolution in the especially in high temperature environment (1). -
Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach
Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach H. J. Xiang1,2*, Bing Huang2, Erjun Kan3, Su-Huai Wei2, X. G. Gong1 1 Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, P. R. China 2National Renewable Energy Laboratory, Golden, Colorado 80401, USA 3Department of Applied Physics, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People’s Republic of China e-mail: [email protected] Abstract Diamond silicon (Si) is the leading material in current solar cell market. However, diamond Si is an indirect band gap semiconductor with a large energy difference (2.4 eV) between the direct gap and the indirect gap, which makes it an inefficient absorber of light. In this work, we develop a novel inverse-band structure design approach based on the particle swarming optimization algorithm to predict the metastable Si phases with better optical properties than diamond Si. Using our new method, we predict a cubic Si20 phase with quasi- direct gaps of 1.55 eV, which is a promising candidate for making thin-film solar cells. PACS: 71.20.-b,42.79.Ek,78.20.Ci,88.40.jj 1 Due to the high stability, high abundance, and the existence of an excellent compatible oxide (SiO2), Si is the leading material of microelectronic devices. Currently, the majority of solar cells fabricated to date have also been based on diamond Si in monocrystalline or large- grained polycrystalline form [1]. There are mainly two reasons for this: First, Si is the second most abundant element in the earth's crust; Second, the Si based photovoltaics (PV) industry could benefit from the successful Si based microelectronics industry. -
CSE- Module-3: SEMICONDUCTOR LIGHT EMITTING DIODE :LED (5Lectures)
CSE-Module- 3:LED PHYSICS CSE- Module-3: SEMICONDUCTOR LIGHT EMITTING DIODE :LED (5Lectures) Light Emitting Diodes (LEDs) Light Emitting Diodes (LEDs) are semiconductors p-n junction operating under proper forward biased conditions and are capable of emitting external spontaneous radiations in the visible range (370 nm to 770 nm) or the nearby ultraviolet and infrared regions of the electromagnetic spectrum General Structure LEDs are special diodes that emit light when connected in a circuit. They are frequently used as “pilot light” in electronic appliances in to indicate whether the circuit is closed or not. The structure and circuit symbol is shown in Fig.1. The two wires extending below the LED epoxy enclose or the “bulb” indicate how the LED should be connected into a circuit or not. The negative side of the LED is indicated in two ways (1) by the flat side of the bulb and (2) by the shorter of the two wires extending from the LED. The negative lead should be connected to the negative terminal of a battery. LEDs operate at relative low voltage between 1 and 4 volts, and draw current between 10 and 40 milliamperes. Voltages and Fig.-1 : Structure of LED current substantially above these values can melt a LED chip. The most important part of a light emitting diode (LED) is the semiconductor chip located in the centre of the bulb and is attached to the 1 CSE-Module- 3:LED top of the anvil. The chip has two regions separated by a junction. The p- region is dominated by positive electric charges, and the n-region is dominated by negative electric charges. -
Encapsulation of Organic and Perovskite Solar Cells: a Review
Review Encapsulation of Organic and Perovskite Solar Cells: A Review Ashraf Uddin *, Mushfika Baishakhi Upama, Haimang Yi and Leiping Duan School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia; [email protected] (M.B.U.); [email protected] (H.Y.); [email protected] (L.D.) * Correspondence: [email protected] Received: 29 November 2018; Accepted: 21 January 2019; Published: 23 January 2019 Abstract: Photovoltaic is one of the promising renewable sources of power to meet the future challenge of energy need. Organic and perovskite thin film solar cells are an emerging cost‐effective photovoltaic technology because of low‐cost manufacturing processing and their light weight. The main barrier of commercial use of organic and perovskite solar cells is the poor stability of devices. Encapsulation of these photovoltaic devices is one of the best ways to address this stability issue and enhance the device lifetime by employing materials and structures that possess high barrier performance for oxygen and moisture. The aim of this review paper is to find different encapsulation materials and techniques for perovskite and organic solar cells according to the present understanding of reliability issues. It discusses the available encapsulate materials and their utility in limiting chemicals, such as water vapour and oxygen penetration. It also covers the mechanisms of mechanical degradation within the individual layers and solar cell as a whole, and possible obstacles to their application in both organic and perovskite solar cells. The contemporary understanding of these degradation mechanisms, their interplay, and their initiating factors (both internal and external) are also discussed. -
Thin Film Cdte Photovoltaics and the U.S. Energy Transition in 2020
Thin Film CdTe Photovoltaics and the U.S. Energy Transition in 2020 QESST Engineering Research Center Arizona State University Massachusetts Institute of Technology Clark A. Miller, Ian Marius Peters, Shivam Zaveri TABLE OF CONTENTS Executive Summary .............................................................................................. 9 I - The Place of Solar Energy in a Low-Carbon Energy Transition ...................... 12 A - The Contribution of Photovoltaic Solar Energy to the Energy Transition .. 14 B - Transition Scenarios .................................................................................. 16 I.B.1 - Decarbonizing California ................................................................... 16 I.B.2 - 100% Renewables in Australia ......................................................... 17 II - PV Performance ............................................................................................. 20 A - Technology Roadmap ................................................................................. 21 II.A.1 - Efficiency ........................................................................................... 22 II.A.2 - Module Cost ...................................................................................... 27 II.A.3 - Levelized Cost of Energy (LCOE) ....................................................... 29 II.A.4 - Energy Payback Time ........................................................................ 32 B - Hot and Humid Climates ........................................................................... -
The Band Gap of Silicon
Norton 0 The Band Gap of Silicon Matthew Norton, Erin Stefanik, Ryan Allured, and Drew Sulski Norton 1 Abstract This experiment was designed to find the band gap of silicon as well as the charge of an electron. A transistor was heated to various temperatures using a hot plate. The resistance was measured over the resistor and transistor in the circuit. In performing this experiment, it was found that the band gap of silicon was (1.10 ± 0.08) eV. In performing this experiment, it was also found that the charge of an electron was (1.77 ± 0.20) × 10 −19 C. Introduction When a substance is placed under the influence of an electric field, it can portray insulating, semi-conducting, semi-metallic, or metallic properties. Every crystalline structure has electrons that occupy energy bands. In a semiconductor, there is a gap in energy between valence band and the bottom of the conduction band. There are no allowed energy states for the electron within the energy gap. At absolute zero, all the electrons have energies within the valence band and the material it is insulating. As the temperature increases electrons gain enough energy to occupy the energy levels in the conduction band. The current through a transistor is given by the equation, qV I= I e kT − 1 0 (1) where I0 is the maximum current for a large reverse bias voltage, q is the charge of the electron, k is the Boltzmann constant, and T is the temperature in Kelvin. As long as V is not too large, the current depends only on the number of minority carriers in the conduction band and the rate at which they diffuse. -
Thermal Management of Concentrated Multi-Junction Solar Cells with Graphene-Enhanced Thermal Interface Materials
applied sciences Article Thermal Management of Concentrated Multi-Junction Solar Cells with Graphene-Enhanced Thermal Interface Materials Mohammed Saadah 1,2, Edward Hernandez 2,3 and Alexander A. Balandin 1,2,3,* 1 Nano-Device Laboratory (NDL), Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521, USA; [email protected] 2 Phonon Optimized Engineered Materials (POEM) Center, Bourns College of Engineering, University of California, Riverside, CA 92521, USA; [email protected] 3 Materials Science and Engineering Program, University of California, Riverside, CA 92521, USA * Correspondence: [email protected]; Tel.: +1-951-827-2351 Academic Editor: Philippe Lambin Received: 20 May 2017; Accepted: 3 June 2017; Published: 7 June 2017 Abstract: We report results of experimental investigation of temperature rise in concentrated multi-junction photovoltaic solar cells with graphene-enhanced thermal interface materials. Graphene and few-layer graphene fillers, produced by a scalable environmentally-friendly liquid-phase exfoliation technique, were incorporated into conventional thermal interface materials. Graphene-enhanced thermal interface materials have been applied between a solar cell and heat sink to improve heat dissipation. The performance of the multi-junction solar cells has been tested using an industry-standard solar simulator under a light concentration of up to 2000 suns. It was found that the application of graphene-enhanced thermal interface materials allows one to reduce the solar cell temperature and increase the open-circuit voltage. We demonstrated that the use of graphene helps in recovering a significant amount of the power loss due to solar cell overheating. The obtained results are important for the development of new technologies for thermal management of concentrated photovoltaic solar cells. -
Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency
Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency Isik C. Kizilyalli, Eric P. Carlson, Daniel W. Cunningham, Joseph S. Manser, Yanzhi “Ann” Xu, Alan Y. Liu March 13, 2018 United States Department of Energy Washington, DC 20585 TABLE OF CONTENTS Abstract 2 Introduction 2 Technical Opportunity 2 Application Space 4 Evolution of ARPA-E’s Focused Programs in Power Electronics 6 Broad Exploration of Power Electronics Landscape - ADEPT 7 Solar Photovoltaics Applications – Solar ADEPT 10 Wide-Bandgap Materials and Devices – SWITCHES 11 Addressing Material Challenges - PNDIODES 16 System-Level Advances - CIRCUITS 18 Impacts 21 Conclusions 22 Appendix: ARPA-E Power Electronics Projects 23 ABSTRACT The U.S. Department of Energy’s Advanced Research Project Agency for Energy (ARPA-E) was established in 2009 to fund creative, out-of-the-box, transformational energy technologies that are too early for private-sector investment at make-or break points in their technology development cycle. Development of advanced power electronics with unprecedented functionality, efficiency, reliability, and reduced form factor are required in an increasingly electrified world economy. Fast switching power semiconductor devices are the key to increasing the efficiency and reducing the size of power electronic systems. Recent advances in wide band-gap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new genera- tion of power semiconductor devices that far exceed the performance of silicon-based devices. Past ARPA-E programs (ADEPT, Solar ADEPT, and SWITCHES) have enabled innovations throughout the power electronics value chain, especially in the area of WBG semiconductors. The two recently launched programs by ARPA-E (CIRCUITS and PNDIODES) continue to investigate the use of WBG semiconductors in power electronics. -
The Field-Effect Transistor (FET) in a Field-Effect Transistor, an Applied Voltage Is Used to Change the Conductivity of an Electron Or “Hole” Channel
The Field-Effect Transistor (FET) In a field-effect transistor, an applied voltage is used to change the conductivity of an electron or “hole” channel. To understand the operation of a FET, we first should understand just a little about the chemistry and physics of semiconductor devices. Let us consider, for simplicity, only silicon devices. Some Background (this section is Explore More!...will not be tested) Silicon (Si) is an element of the periodic table that contains 4 electrons in its “outer shell”. Pure silicon can arrange itself in a diamond cubic crystal structure (ref: http://en.wikipedia.org/wiki/Band_gap) where it shares its electrons with other Si atoms. The valance band is nominally full and the conduction band is nominally empty, thus resulting in an insulating material. Within this structure, Si forms an insulating material with a band gap energy of 1.11 electron volts (1.6e-19J, the amount of energy needed to move one electron across a one volt potential) separating the valance band from the conduction band. Figure 1: Electron band gap of an undoped (intrinsic) semiconductor. When doped (or infused) with an element that contains 5 electrons in its outer shell (say, for instance, nitrogen, N), this element will displace one silicon atom. Only using 4 of its 5 outer-shell electrons to form tight bonds with the neighboring Si atoms, nitrogen has one electron that is only loosely bound to the lattice. An electron may be more easily excited into the conduction band (the dopant provides a smaller band gap). With enough dopants (often 1 doping atom per 1 thousand to 1 billion Si atoms) and energy to excite electrons into the conduction band, the material becomes less like an insulator and more like a conductor. -
An Inorganic Light-Emitting Diode (LED; Figure 1) Is a Diode Which Is Forward-Biased (Switched On)
Figure 1: a) examples of LEDs; b) circuit symbol An inorganic Light-Emitting Diode (LED; Figure 1) is a diode which is forward-biased (switched on). By doing so electrons are able to recombine with holes within the vicinity of the junction (depletion region) thereby releasing energy in the form of light (photons) as shown in Figure 2 a). One basic requirement for the used semiconductor is to be a direct band gap semiconductor. This means that the maximum of the valence-band and the minimum of the conduction band meet at the same k-value. Figure 2 b) and c) show the 2 types of semiconductors. Since Si is an indirect band-gap semiconductor no photons are emitted by Si-based p-n-junctions. Figure 2: a) forward biased p-n-junction b) indirect band-gap semiconductor; c)direct Figure 3: a) band diagram in a heterojunction LED; b) schematic display of a double heterostructure LED Figure 3 a) shows the band diagram of an improved LED where a heterojuncion is used. The figure shows that the central material (where the light is generated) is surrounded by a region with a higher energy gap. This allows confining the injected charge carriers inside the un-doped central region with a lower band-gap thereby increasing the emissive radiation rate. Figure 3 b) shows the configuration of a double heterorstructure LED. This type of confinement is also utilized for semiconductor lasers. The usage of a heterojunction is further advantageous to obtain a higher output of light out of the LED since the generated photons don’t have enough energy to generate an electron-hole pair within the semiconductor with wider band-gap. -
(2020) How Solar Cell Efficiency Is Governed by the Αμτ Product
PHYSICAL REVIEW RESEARCH 2, 023109 (2020) How solar cell efficiency is governed by the αμτ product Pascal Kaienburg ,1,2,* Lisa Krückemeier ,1 Dana Lübke ,1 Jenny Nelson ,3 Uwe Rau,1 and Thomas Kirchartz 1,4,† 1IEK5-Photovoltaics, Forschungszentrum Jülich, 52425 Jülich, Germany 2Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, OX1 3PU Oxford, United Kingdom 3Department of Physics and Centre for Plastic Electronics, Imperial College London, London SW7 2AZ, United Kingdom 4Faculty of Engineering and CENIDE, University of Duisburg-Essen, Carl-Benz-Strasse 199, 47057 Duisburg, Germany (Received 18 September 2019; accepted 15 March 2020; published 30 April 2020) The interplay of light absorption, charge-carrier transport, and charge-carrier recombination determines the performance of a photovoltaic absorber material. Here we analyze the influence on the solar-cell efficiency of the absorber material properties absorption coefficient α, charge-carrier mobility μ, and charge-carrier lifetime τ, for different scenarios. We combine analytical calculations with numerical drift-diffusion simulations to understand the relative importance of these three quantities. Whenever charge collection is a limiting factor, the αμτ product is a good figure of merit (FOM) to predict solar-cell efficiency, while for sufficiently high mobilities, the relevant FOM is reduced to the ατ product. We find no fundamental difference between simulations based on monomolecular or bimolecular recombination, but strong surface-recombination affects the maximum efficiency in the high-mobility limit. In the limiting case of high μ and high surface-recombination velocity S,theα/S ratio is the relevant FOM. Subsequently, we apply our findings to organic solar cells which tend to suffer from inefficient charge-carrier collection and whose absorptivity is influenced by interference effects. -
Light-Emitting Diodes (Leds) Teacher Materials (Includes Student Materials)
Light-Emitting Diodes (LEDs) Teacher Materials (includes Student Materials) Index 2 Curriculum Suggestions 3 Sample Lesson plans 4 Light Emitting Diodes Overview 6 More Information on Light Emitting Diodes 7 Demonstration 1 - Electron Flow within an Energy Band 17 Demonstration 2 -Changing Conductivity By Adding or Removing Electrons 20 Demonstration 3 -Investigating Electronic Properties of a p-n Junction 24 Demonstration 4 -Relationship Between Composition and Wavelength of LEDs 27 Student Follow- Up Questions 30 Investigations: What makes graphite a good conductor Teacher Version 34 Student Version 35 Investigations: The Crystal Structure of Light Emitting Diodes Teacher Version 36 Student Version 37 Experiments Teacher Version 39 Student Version 40 Review Materials Teacher Version 43 Student Version 48 Assessment Teacher Version 52 Student Version 57 Light Emitting Diodes (LEDs) Curriculum Suggestions Sample Lesson Plan LED Overview Light Emitting Diodes Demonstration 1 (Instructor copy) Demonstration 2 (Instructor copy) Demonstration 3 (Instructor copy) Demonstration 4 (Instructor copy) Student Questions after Demonstration 4 Investigation 1 (Student copy) Investigation 1 (Instructor copy) Investigation 2 (Student copy) Investigation 2 (Instructor copy) Experiment 1 (Student copy) Experiment 1 (Instructor copy) LED Review Questions (Student copy) LED Review Questions (Instructor copy) LED Assessment (Student copy) LED Assessment (Instructor copy) 2 CURRICULUM SUGGESTIONS TOPICS SOLIDS QUANTUM MECHANICS SEMICONDUCTORS Bonding Electron Configurations p-n Junctions Metals Periodic Table LEDs Metallic Bonding Periodic Relationships (Trends) (Valence-Bond Model) Band Theory Solid Solutions OVERVIEW This module would complement a unit on atomic structure and periodicity. Typically, is introduced in two chapters: one dealing with the nature of light and its use to determine the electronic structure of atoms; and another that relates this electronic structure to the periodic table and trends in properties.