An Engineer's Comparison of Nvsram, MRAM and F-RAM
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Fast Non-Volatile RAM Products Superior Price and Performance from a Source You Can Trust
Fast Non-Volatile RAM Products Superior price and performance from a source you can trust www.freescale.com/MRAM The Future of Non-Volatile Read/Write Memory is Magnetic Freescale Semiconductor delivers the world’s non-volatile for greater than 20 years. Commercial MRAM Products Selector Guide Freescale MRAM Features first commercial magnetoresistive random SRAM-compatible packaging assures Part Number Density Configuration Voltage Speed Grades Temperature Package RoHS Compliant • 35 ns read/write cycle time access memory (MRAM) products. Our alternate sourcing from other suppliers. MR2A16ATS35C 4 Mb 256 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • Unlimited read/write endurance MRAM products store data using magnetic MR1A16AYS35 2 Mb 128 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • 3.3V ± 10 percent power supply polarization rather than electric charge. Extended Temperature Range and MR0A16AYS35 1 Mb 64 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • Always non-volatile with greater than MRAM stores data for decades while reading Superior Reliability 20-year retention and writing at SRAM speed without wear- MRAM delivers a 3 volt high-density out. MRAM products use small, simple • Magnetically shielded to greater than non-volatile RAM that operates over extended cells to deliver the highest density and best 25 oersted (Oe) temperature. MRAM does not exhibit the price/performance in the non-volatile RAM • Commercial, Industrial and Extended charge storage failure modes that limit the marketplace. With our new expanded product Temperature Options data retention or endurance of line, we serve a growing portion of the other technologies. -
Magnetic Storage- Magnetic-Core Memory, Magnetic Tape,RAM
Magnetic storage- From magnetic tape to HDD Juhász Levente 2016.02.24 Table of contents 1. Introduction 2. Magnetic tape 3. Magnetic-core memory 4. Bubble memory 5. Hard disk drive 6. Applications, future prospects 7. References 1. Magnetic storage - introduction Magnetic storage: Recording & storage of data on a magnetised medium A form of „non-volatile” memory Data accessed using read/write heads Widely used for computer data storage, audio and video applications, magnetic stripe cards etc. 1. Magnetic storage - introduction 2. Magnetic tape 1928 Germany: Magnetic tape for audio recording by Fritz Pfleumer • Fe2O3 coating on paper stripes, further developed by AEG & BASF 1951: UNIVAC- first use of magnetic tape for data storage • 12,7 mm Ni-plated brass-phosphorus alloy tape • 128 characters /inch data density • 7000 ch. /s writing speed 2. Magnetic tape 2. Magnetic tape 1950s: IBM : patented magnetic tape technology • 12,7 mm wide magnetic tape on a 26,7 cm reel • 370-730 m long tapes 1980: 1100 m PET –based tape • 18 cm reel for developers • 7, 9 stripe tapes (8 bit + parity) • Capacity up to 140 MB DEC –tapes for personal use 2. Magnetic tape 2014: Sony & IBM recorded 148 Gbit /squareinch tape capacity 185 TB! 2. Magnetic tape Remanent structural change in a magnetic medium Analog or digital recording (binary storage) Longitudinal or perpendicular recording Ni-Fe –alloy core in tape head 2. Magnetic tape Hysteresis in magnetic recording 40-150 kHz bias signal applied to the tape to remove its „magnetic history” and „stir” the magnetization Each recorded signal will encounter the same magnetic condition Current in tape head proportional to the signal to be recorded 2. -
Scalability and Reliability of Phase Change Memory
SCALABILITY AND RELIABILITY OF PHASE CHANGE MEMORY A DISSERTATION SUBMITTED TO THE DEPARTMENT OF ELECTRICAL ENGINEERING AND THE COMMITTEE ON GRADUATE STUDIES OF STANFORD UNIVERSITY IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF DOCTOR OF PHILOSOPHY SangBum Kim Aug 2010 © 2010 by SangBum Kim. All Rights Reserved. Re-distributed by Stanford University under license with the author. This work is licensed under a Creative Commons Attribution- Noncommercial 3.0 United States License. http://creativecommons.org/licenses/by-nc/3.0/us/ This dissertation is online at: http://purl.stanford.edu/kk866zc2173 ii I certify that I have read this dissertation and that, in my opinion, it is fully adequate in scope and quality as a dissertation for the degree of Doctor of Philosophy. Philip Wong, Primary Adviser I certify that I have read this dissertation and that, in my opinion, it is fully adequate in scope and quality as a dissertation for the degree of Doctor of Philosophy. Yi Cui I certify that I have read this dissertation and that, in my opinion, it is fully adequate in scope and quality as a dissertation for the degree of Doctor of Philosophy. Yoshio Nishi Approved for the Stanford University Committee on Graduate Studies. Patricia J. Gumport, Vice Provost Graduate Education This signature page was generated electronically upon submission of this dissertation in electronic format. An original signed hard copy of the signature page is on file in University Archives. iii Abstract Various memory devices are being widely used for a wide range of applications. There has not been any universal memory device so far because each memory device has a unique set of features. -
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UNIVERSITY OF CALIFORNIA Los Angeles Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory A dissertation submitted in partial satisfaction of the requirements for the degree Doctor of Philosophy in Electrical and Computer Engineering by Xiang Li 2018 © Copyright by Xiang Li 2018 ABSTRACT OF THE DISSERTATION Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory by Xiang Li Doctor of Philosophy in Electrical and Computer Engineering University of California, Los Angeles, 2018 Professor Kang Lung Wang, Chair Magnetic memory that utilizes spin to store information has become one of the most promising candidates for next-generation non-volatile memory. Electric-field-assisted writing of magnetic tunnel junctions (MTJs) that exploits the voltage-controlled magnetic anisotropy (VCMA) effect offers great potential for high density and low power memory applications. This emerging Magnetoelectric Random Access Memory (MeRAM) based on the VCMA effect has been investigated due to its lower switching current, compared with traditional current-controlled devices utilizing spin transfer torque (STT) or spin-orbit torque (SOT) for magnetization switching. It is of great promise to integrate MeRAM into the advanced CMOS back-end-of-line (BEOL) processes for on-chip embedded applications, and enable non-volatile electronic systems with low static power dissipation and instant-on operation capability. To achieve the full potential of MeRAM, it is critical to design magnetic materials with high voltage-induced ii writing efficiency, i.e. VCMA coefficient, to allow for low write energy, low write error rate, and high density MeRAM at advanced nodes. In this dissertation, we will first discuss the advantage of MeRAM over other memory technologies with a focus on array-level memory performance, system-level 3D integration, and scaling at advanced nodes. -
Device-Aware Inference Operations in SONOS Non- Volatile Memory Arrays
Device-aware inference operations in SONOS non- volatile memory arrays Christopher H. Bennett1*, T. Patrick Xiao1*, Ryan Dellana1, Ben Feinberg1, Sapan Agarwal1, and Matthew J. Marinella1 1. Sandia National Laboratories, Albuquerque, NM 87185-1084, USA {cbennet,txiao,mmarine}@sandia.gov *These authors contributed equally Vineet Agrawal2, Venkatraman Prabhakar2, Krishnaswamy Ramkumar2, Long Hinh2, Swatilekha Saha2, Vijay Raghavan3, Ramesh Chettuvetty3 2. Cypress Semiconductor Corporation, 198 Champion Court, San Jose, CA, 95134, USA 3. Cypress Semiconductor Corporation, Ste #120, 536 Chapel Hills Drive, Colorado Springs, CO, 80920, USA [email protected] Abstract— Non-volatile memory arrays can deploy pre-trained noise, variability, and circuit non-idealities [6],[7]. We neural network models for edge inference. However, these additionally investigate the impact of retention loss as systems are affected by device-level noise and retention issues. measured in real devices and show that the same device-aware Here, we examine damage caused by these effects, introduce a training methods can be applied to mitigate the effects of mitigation strategy, and demonstrate its use in fabricated array weight drift. In the following sections, we demonstrate that the of SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) devices. On following two approaches – in terms of software neural MNIST, fashion-MNIST, and CIFAR-10 tasks, our approach network and circuit architecture respectively – can mitigate increases resilience to synaptic noise and drift. We also show device non-idealities: strong performance can be realized with ADCs of 5-8 bits precision. The use of noise regularization during training which implicitly counteracts generic noise disturbance, device- Index Terms-- SONOS, CTM, neural networks, edge inference to-device variability, and charge decay phenomenon: The use of an appropriate 1T,1CTM cells in a dual array I. -
The Effects of Magnetic Fields on Magnetic Storage Media Used in Computers
NITED STATES ARTMENT OF MMERCE NBS TECHNICAL NOTE 735 BLICATION of Magnetic Fields on Magnetic Storage Media Used in Computers — NATIONAL BUREAU OF STANDARDS The National Bureau of Standards^ was established by an act of Congress March 3, 1901. The Bureau's overall goal is to strengthen and advance the Nation's science and technology and facilitate their effective application for public benefit. To this end, the Bureau conducts research and provides: (1) a basis for the Nation's physical measure- ment system, (2) scientific and technological services for industry and government, (3) a technical basis for equity in trade, and (4) technical services to promote public safety. The Bureau consists of the Institute for Basic Standards, the Institute for Materials Research, the Institute for Applied Technology, the Center for Computer Sciences and Technology, and the Office for Information Programs. THE INSTITUTE FOR BASIC STANDARDS provides the central basis within the United States of a complete and consistent system of physical measurement; coordinates that system with measurement systems of other nations; and furnishes essential services leading to accurate and uniform physical measurements throughout the Nation's scien- tific community, industry, and commerce. The Institute consists of a Center for Radia- tion Research, an Office of Measurement Services and the following divisions: Applied Mathematics—Electricity—Heat—Mechanics—Optical Physics—Linac Radiation^—Nuclear Radiation^—Applied Radiation-—Quantum Electronics' Electromagnetics^—Time and Frequency'—Laboratory Astrophysics'—Cryo- genics'. THE INSTITUTE FOR MATERIALS RESEARCH conducts materials research lead- ing to improved methods of measurement, standards, and data on the properties of well-characterized materials needed by industry, commerce, educational institutions, and Government; provides advisory and research services to other Government agencies; and develops, produces, and distributes standard reference materials. -
A Stacked Memory Device on Logic 3D Technology for Ultra-High-Density Data Storage
IOP PUBLISHING NANOTECHNOLOGY Nanotechnology 22 (2011) 254006 (7pp) doi:10.1088/0957-4484/22/25/254006 A stacked memory device on logic 3D technology for ultra-high-density data storage Jiyoung Kim1,2, Augustin J Hong1, Sung Min Kim1,2, Kyeong-Sik Shin1, Emil B Song1, Yongha Hwang1, Faxian Xiu1, Kosmas Galatsis1, Chi On Chui1, Rob N Candler1, Siyoung Choi2, Joo-Tae Moon2 and Kang L Wang1 1 Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA 2 Advanced Technology Development Team and Process Development Team, Memory R&D Center, Samsung Electronics Co. Ltd, Korea E-mail: [email protected] Received 22 June 2010, in final form 29 September 2010 Published 16 May 2011 Online at stacks.iop.org/Nano/22/254006 Abstract We have demonstrated, for the first time, a novel three-dimensional (3D) memory chip architecture of stacked-memory-devices-on-logic (SMOL) achieving up to 95% of cell-area efficiency by directly building up memory devices on top of front-end CMOS devices. In order to realize the SMOL, a unique 3D Flash memory device and vertical integration structure have been successfully developed. The SMOL architecture has great potential to achieve tera-bit level memory density by stacking memory devices vertically and maximizing cell-area efficiency. Furthermore, various emerging devices could replace the 3D memory device to develop new 3D chip architectures. S Online supplementary data available from stacks.iop.org/Nano/22/254006/mmedia (Some figures in this article are in colour only in the electronic version) 1. Introduction patterning resolution, transistor short-channel effects, and ever increasing interference between adjacent cells [3, 5–8]. -
Investigation of High-К Dielectric Films Incorporated with Lanthanum and Their Application in Flash Memory Devices
View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by ScholarBank@NUS INVESTIGATION OF HIGH-К DIELECTRIC FILMS INCORPORATED WITH LANTHANUM AND THEIR APPLICATION IN FLASH MEMORY DEVICES HE WEI NATIONAL UNIVERSITY OF SINGAPORE 2009 INVESTIGATION OF HIGH-К DIELECTRIC FILMS INCORPORATED WITH LANTHANUM AND THEIR APPLICATION IN FLASH MEMORY DEVICES He Wei (B. Eng., Harbin Institute of Technology) A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL & COMPUTER ENGINEERING NATIONAL UNIVERSITY OF SINGAPORE 2009 Abstract Abstract The SONOS-type of flash memory is one of the promising candidates to replace the conventional floating-gate type flash memory to enable continued memory device down-sizing. For a typical SONOS-type flash memory, there is a tradeoff between data retention and operation speeds. In order to break this tradeoff, Al2O3 as a blocking oxide has been proposed and exhibits promising results. However, the permittivity of Al2O3 is not high (only around 9) and even higher permittivity dielectrics, such as LaAlOx and HfLaOx, were investigated here to further improve the memory performance. The lanthanum-incorporated dielectrics (LaAlOx and HfLaOx) were deposited using the atomic layer deposition (ALD) method at 300ºC. The enhancement of deposition rate of La2O3 was observed when co-introducing the Hf or Al precursor into the process chamber to form HfLaOx or LaAlOx, respectively. Overall, the ALD processes of both HfLaOx and LaAlOx showed good self-limiting behavior, good film uniformity, low carbon impurity and a strictly linear relationship between the film thickness and deposition cycles, indicating good ALD characteristics. -
Memory and Storage Systems
CHAPTER 3 MEMORY AND STORAGE SYSTEMS Chapter Outline Chapter Objectives 3.1 Introduction In this chapter, we will learn: 3.2 Memory Representation ∑ The concept of memory and its 3.3 Random Access Memory representation. 3.3.1 Static RAM ∑ How data is stored in Random Access 3.3.2 Dynamic RAM Memory (RAM) and the various types of 3.4 Read Only Memory RAM. 3.4.1 Programmable ROM ∑ How data is stored in Read Only Memory 3.4.2 Erasable PROM (ROM) and the various types of ROM. 3.4.3 Electrically Erasable PROM ∑ The concept of storage systems and the 3.4.4 Flash ROM various types of storage systems. 3.5 Storage Systems ∑ The criteria for evaluating storage 3.6 Magnetic Storage Systems systems. 3.6.1 Magnetic Tapes 3.6.2 Magnetic Disks 3.7 Optical Storage Systems 3.1 INTRODUCTION 3.7.1 Read only Optical Disks 3.7.2 Write Once, Read Many Disks Computers are used not only for processing of data 3.8 Magneto Optical Systems for immediate use, but also for storing of large 3.8.1 Principle used in Recording Data volume of data for future use. In order to meet 3.8.2 Architecture of Magneto Optical Disks these two specifi c requirements, computers use two 3.9 Solid-State Storage Devices types of storage locations—one, for storing the data 3.9.1 Structure of SSD that are being currently handled by the CPU and the 3.9.2 Advantages of SSD other, for storing the results and the data for future 3.9.3 Disadvantages of SSD use. -
Resistive-RAM for Data Storage Applications by Siddharth Gaba A
Resistive-RAM for Data Storage Applications by Siddharth Gaba A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy (Electrical Engineering) in the University of Michigan 2014 Doctoral Committee Associate Professor Wei Lu, Chair Assistant Professor Emmanouil Kioupakis Professor Jerome P. Lynch Assistant Professor Zhengya Zhang Associate Professor Zhaohui Zhong TABLE OF CONTENTS List of Figures…………………………………………………………………………………….vi List of Tables……………………………………………………………………………………xiii Abstract………………………………………………………………………………………….xiv Chapter 1 Introduction ............................................................................................................. 1 1.1 Data Explosion .................................................................................................. 1 1.2 The NVM Workhorse: FLASH ........................................................................ 1 1.3 Semiconductor Flash Memory Scaling ............................................................. 3 1.4 Emerging Non-Volatile Memories ................................................................... 5 1.5 RRAM ............................................................................................................... 8 1.6 Organization of the Thesis .............................................................................. 11 References ............................................................................................................. 12 Chapter 2 Amorphous Silicon Based Electrochemical -
A Study About Non-Volatile Memories
Preprints (www.preprints.org) | NOT PEER-REVIEWED | Posted: 29 July 2016 doi:10.20944/preprints201607.0093.v1 1 Article 2 A Study about Non‐Volatile Memories 3 Dileep Kumar* 4 Department of Information Media, The University of Suwon, Hwaseong‐Si South Korea ; [email protected] 5 * Correspondence: [email protected] ; Tel.: +82‐31‐229‐8212 6 7 8 Abstract: This paper presents an upcoming nonvolatile memories (NVM) overview. Non‐volatile 9 memory devices are electrically programmable and erasable to store charge in a location within the 10 device and to retain that charge when voltage supply from the device is disconnected. The 11 non‐volatile memory is typically a semiconductor memory comprising thousands of individual 12 transistors configured on a substrate to form a matrix of rows and columns of memory cells. 13 Non‐volatile memories are used in digital computing devices for the storage of data. In this paper 14 we have given introduction including a brief survey on upcoming NVMʹs such as FeRAM, MRAM, 15 CBRAM, PRAM, SONOS, RRAM, Racetrack memory and NRAM. In future Non‐volatile memory 16 may eliminate the need for comparatively slow forms of secondary storage systems, which include 17 hard disks. 18 Keywords: Non‐volatile Memories; NAND Flash Memories; Storage Memories 19 PACS: J0101 20 21 22 1. Introduction 23 Memory is divided into two main parts: volatile and nonvolatile. Volatile memory loses any 24 data when the system is turned off; it requires constant power to remain viable. Most kinds of 25 random access memory (RAM) fall into this category. -
Wordperfect Office Document
THE INTERNET OF BODIES ANDREA M. MATWYSHYN* ABSTRACT This Article introduces the ongoing progression of the Internet of Things (IoT) into the Internet of Bodies (IoB)—a network of human bodies whose integrity and functionality rely at least in part on the Internet and related technologies, such as artificial intelligence. IoB devices will evidence the same categories of legacy security flaws that have plagued IoT devices. However, unlike most IoT, IoB technolo- gies will directly, physically harm human bodies—a set of harms courts, legislators, and regulators will deem worthy of legal redress. As such, IoB will herald the arrival of (some forms of) corporate software liability and a new legal and policy battle over the integrity of the human body and mind. Framing this integrity battle in light of current regulatory approaches, this Article offers a set of specific innovation-sensitive proposals to bolster corporate conduct safe- guards through regulatory agency action, contract, tort, intellectual property, and secured transactions and bankruptcy. Yet, the challenges of IoB are not purely legal in nature. The social integration of IoB will also not be seamless. As bits and bodies meld and as human flesh becomes permanently entwined with hardware, * Associate Dean of Innovation and Professor of Law and Engineering Policy, Penn State Law (University Park); Professor of Engineering Design, Penn State Engineering; Founding Director Penn State Policy Innovation Lab of Tomorrow (PILOT); Affiliate Scholar, Center for Internet and Society, Stanford