Useful Formulas and Equations
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Role of Mosfets Transconductance Parameters and Threshold Voltage in CMOS Inverter Behavior in DC Mode
Preprints (www.preprints.org) | NOT PEER-REVIEWED | Posted: 28 July 2017 doi:10.20944/preprints201707.0084.v1 Article Role of MOSFETs Transconductance Parameters and Threshold Voltage in CMOS Inverter Behavior in DC Mode Milaim Zabeli1, Nebi Caka2, Myzafere Limani2 and Qamil Kabashi1,* 1 Department of Engineering Informatics, Faculty of Mechanical and Computer Engineering ([email protected]) 2 Department of Electronics, Faculty of Electrical and Computer Engineering ([email protected], [email protected]) * Correspondence: [email protected]; Tel.: +377-44-244-630 Abstract: The objective of this paper is to research the impact of electrical and physical parameters that characterize the complementary MOSFET transistors (NMOS and PMOS transistors) in the CMOS inverter for static mode of operation. In addition to this, the paper also aims at exploring the directives that are to be followed during the design phase of the CMOS inverters that enable designers to design the CMOS inverters with the best possible performance, depending on operation conditions. The CMOS inverter designed with the best possible features also enables the designing of the CMOS logic circuits with the best possible performance, according to the operation conditions and designers’ requirements. Keywords: CMOS inverter; NMOS transistor; PMOS transistor; voltage transfer characteristic (VTC), threshold voltage; voltage critical value; noise margins; NMOS transconductance parameter; PMOS transconductance parameter 1. Introduction CMOS logic circuits represent the family of logic circuits which are the most popular technology for the implementation of digital circuits, or digital systems. The small dimensions, low power of dissipation and ease of fabrication enable extremely high levels of integration (or circuits packing densities) in digital systems [1-5]. -
El156 Audio Power
EL156 AUDIO POWER Gerhard Haas Thanks to its robustness, the legendary EL156 audio power pentode has found its way into many professional amplifier units. Its attraction derives not just from its appealing shape, but also from its impressive audio characteristics. We therefore bring you this classical circuit, updated using high- quality modern components. 28 elektor electronics - 3/2005 AMPLIFIER Return of a legend The EL156 was manufactured in the enough to give adequate sensitivity, electrolytic capacitor: this voltage is legendary Telefunken valve factory in even before allowing any margin for further filtered on the amplifier board. Ulm, near the river Danube in Ger- negative feedback. The ECC81 many. The EL156 made amplifiers with (12AT7), however, which has an open- It is not possible to build an ultra-lin- an output power of up to 130 W possi- loop gain of 60 and which can be oper- ear amplifier using the EL156 with a ble, using just two valves in the output ated with anode currents of up to high anode voltage. The same goes for stage and one driver valve. Genuine 10 mA, can be used to build a suitably the EL34. The output transformer is EL156s are no longer available new at low-impedance circuit. therefore connected in such a way that realistic prices, and hardly any are Two EL156s can be used to produce an the impedance of the grid connection available second-hand. The original output power of 130 W with only 6 % to the output valve is much lower than devices used a metal valve base which distortion. -
Valve Biasing
VALVE AMP BIASING Biased information How have valve amps survived over 30 years of change? Derek Rocco explains why they are still a vital ingredient in music making, and talks you through the mysteries of biasing N THE LAST DECADE WE HAVE a signal to the grid it causes a water as an electrical current, you alter the negative grid voltage by seen huge advances in current to flow from the cathode to will never be confused again. When replacing the resistor I technology which have the plate. The grid is also known as your tap is turned off you get no to gain the current draw required. profoundly changed the way we the control grid, as by varying the water flowing through. With your Cathode bias amplifiers have work. Despite the rise in voltage on the grid you can control amp if you have too much negative become very sought after. They solid-state and digital modelling how much current is passed from voltage on the grid you will stop have a sweet organic sound that technology, virtually every high- the cathode to the plate. This is the electrical current from flowing. has a rich harmonic sustain and profile guitarist and even recording known as the grid bias of your amp This is known as they produce a powerful studios still rely on good ol’ – the correct bias level is vital to the ’over-biased’ soundstage. Examples of these fashioned valves. operation and tone of the amplifier. and the amp are most of the original 1950’s By varying the negative grid will produce Fender tweed amps such as the What is a valve? bias the technician can correctly an unbearable Deluxe and, of course, the Hopefully, a brief explanation will set up your amp for maximum distortion at all legendary Vox AC30. -
Junction Field Effect Transistor (JFET)
Junction Field Effect Transistor (JFET) The single channel junction field-effect transistor (JFET) is probably the simplest transistor available. As shown in the schematics below (Figure 6.13 in your text) for the n-channel JFET (left) and the p-channel JFET (right), these devices are simply an area of doped silicon with two diffusions of the opposite doping. Please be aware that the schematics presented are for illustrative purposes only and are simplified versions of the actual device. Note that the material that serves as the foundation of the device defines the channel type. Like the BJT, the JFET is a three terminal device. Although there are physically two gate diffusions, they are tied together and act as a single gate terminal. The other two contacts, the drain and source, are placed at either end of the channel region. The JFET is a symmetric device (the source and drain may be interchanged), however it is useful in circuit design to designate the terminals as shown in the circuit symbols above. The operation of the JFET is based on controlling the bias on the pn junction between gate and channel (note that a single pn junction is discussed since the two gate contacts are tied together in parallel – what happens at one gate-channel pn junction is happening on the other). If a voltage is applied between the drain and source, current will flow (the conventional direction for current flow is from the terminal designated to be the gate to that which is designated as the source). The device is therefore in a normally on state. -
Vacuum Tube Theory, a Basics Tutorial – Page 1
Vacuum Tube Theory, a Basics Tutorial – Page 1 Vacuum Tubes or Thermionic Valves come in many forms including the Diode, Triode, Tetrode, Pentode, Heptode and many more. These tubes have been manufactured by the millions in years gone by and even today the basic technology finds applications in today's electronics scene. It was the vacuum tube that first opened the way to what we know as electronics today, enabling first rectifiers and then active devices to be made and used. Although Vacuum Tube technology may appear to be dated in the highly semiconductor orientated electronics industry, many Vacuum Tubes are still used today in applications ranging from vintage wireless sets to high power radio transmitters. Until recently the most widely used thermionic device was the Cathode Ray Tube that was still manufactured by the million for use in television sets, computer monitors, oscilloscopes and a variety of other electronic equipment. Concept of thermionic emission Thermionic basics The simplest form of vacuum tube is the Diode. It is ideal to use this as the first building block for explanations of the technology. It consists of two electrodes - a Cathode and an Anode held within an evacuated glass bulb, connections being made to them through the glass envelope. If a Cathode is heated, it is found that electrons from the Cathode become increasingly active and as the temperature increases they can actually leave the Cathode and enter the surrounding space. When an electron leaves the Cathode it leaves behind a positive charge, equal but opposite to that of the electron. In fact there are many millions of electrons leaving the Cathode. -
The Development of the Vacuum Tube Creators
The Knowledge Bank at The Ohio State University Ohio State Engineer Title: The Development of the Vacuum Tube Creators: Jeffrey, Richard B. Issue Date: May-1928 Publisher: Ohio State University, College of Engineering Citation: Ohio State Engineer, vol. 11, no. 7 (May, 1928), 9-10. URI: http://hdl.handle.net/1811/34260 Appears in Collections: Ohio State Engineer: Volume 11, no. 7 (May, 1928) THE OHIO STATE ENGINEER The Development of the Vacuum Tube By RICHARD B. JEFFREY, '31 The history of the vacuum tube began with the discovery of the Edison Effect. This, like a great many other important discoveries, was an acci- dent. Edison, while experimenting with his in- candescent lamps, had placed more than one fila- output ment in the same bulb, and he noticed that if one of the filaments was held positive with respect to the other a current would flow through the bulb. He also found that this positive element, or, as it is now called, plate, did not have to be hot to sustain this current flow. This phenomenon li—- H was known for some time as a curiosity, but noth- 1 +90 to \35 ing more. Then Fleming, an English experiment- +4-5 er, noticed that if an alternating current were The screen-qrid tube (tetrode). applied to this plate the current would flow only plicated system by making use of the rectifying when the plate was positive. In other words, the properties of a crystal, notably galena. When tube acted as a rectifier, allowing the current to signals were received in this way it was the signal flow in only one direction. -
ME430 Mechatronics Lab 2: Transistors, H-Bridges, and Motors
Name ____________________________________ Name ____________________________________ ME430 Mechatronics Lab 2: Transistors, H‐Bridges, and motors The lab team has demonstrated: Part (A) Driving LEDs and DC Motors by Sourcing and Sinking Current from a Logic Gate ______________ Sourcing Current ______________ Sinking Current Part (B) Driving DC Motors using Logic Gates and Transistors ______________ NPN BJT transistor ______________ N‐channel MOSFET transistor ______________ Darlington Chip (ULN2003) Part (C) Using 12 Volt Power Supplies to Drive Lamps and Fans ______________ MOSFETs ______________ BJTs ______________ Darlingtons Part (D) Using a Darlington to drive multiple LEDs ______________ Dancing lights Part (E) Bi‐directional Control of Motors with H‐Bridge chips ______________ DC Motor with bi‐directional 5V drive circuit ______________ Linear actuator DC motor with bi‐directional 12V drive circuit ______________ Stepper Motor at 5V with 2 sets of bi‐directional phases ME430 Mechatronics: Lab 2 1 Part (A) Driving LEDs and DC Motors by Sourcing and Sinking Current from a Logic Gate In the “Intro to Transistors” video lecture, you also learned about sourcing and sinking current from a logic gate. Sinking the current allows much higher current levels. In this part we would like to build the two configurations and verify that they work. (1) Sourcing Current First, rebuild the simple current sourcing circuit you built for the beginning of Lab 1. Make sure that one works before you move on. Recall that it looks like We would like to modify the circuit to also drive (by sourcing the current from the 7404) a DC (brushed) motor. These are the ordinary‐looking silver‐grey motors. -
Operation, Tetrode, Pentode in the Single-Ended, Class-A
10-76 10. Guitar Amplifiers 10.5.1 Single-ended (class A)-operation, tetrode, pentode In the single-ended, class-A power-stage, one (single) power-tube operates in common- cathode configuration with the output transformer being part of the plate circuit (transformer- coupling). Without AC-drive (“quiescent state”), a stable balance appears – it is called the operating point (OPP). The characteristics shown in Fig. 10.5.2 yield an OPP at 250 V and 48 mA, if a voltage of -7.5 V between (control) grid (g1) and cathode is chosen. This can be done e.g. by using a cathode-resistor of 142 Ω. The cathode-current (the sum of the 48-mA- plate-current and the 5-mA-screen-grid-current) will then generate a positive cathode-voltage of + 7.5 V (relative to ground). With the control-grid at ground-potential (Ug1 = 0) a control- grid-to-cathode-voltage of -7.5 V results (i.e. the control grid is negative vs. the cathode). Fig. 10.5.2: Output characteristics of the EL84, power-stage circuit (single-ended class-A operation). AP = OPP As a drive signal appears (Ug1 ≠ 0), plate-voltage and –current change. As a first approach, it will be sufficient to consider the transformer in the plate-circuit as a large inductance connected in parallel with an ohmic resistor (Chapter 10.6). In this model we have only pure DC flowing through the inductance, and only pure AC flowing through the resistor. With a drive-signal present, the Ua/Ia-point will move along the load-line given in Fig. -
2N6294 Silicon NPN Transistor Darlington Power Amplifier, Switch TO−66 Type Package
2N6294 Silicon NPN Transistor Darlington Power Amplifier, Switch TO−66 Type Package Description: The 2N6294 silicon NPN Darlington transistor is a TO−66 type case designed for general purpose amplifier, low−frequency switching and hammer driver applications. Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Monolithic Construction with Built−In Base−Emitter Shunt Resistors Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO ...................................................... 60V Collector−Base Voltage, VCB ......................................................... 60V Emitter−Base Voltage, VEB ........................................................... 5V Collector Current, IC Continuous ................................................................... 4A Peak ........................................................................ 8A Base Current, IB ................................................................. 80mA Total Power Dissipation (TC = +25C), PD ............................................ 50W Derate Above 25C..................................................... 0.286W/C Operating Junction Temperature Range, TJ ..................................−65 to +200C Storage Temperature Range, Tstg ..........................................−65 to +200C Thermal Resistance, Junction−to−Case, RthJC ..................................... 3.5C/W Electrical Characteristics: (TC = +25C unless -
1999-2017 INDEX This Index Covers Tube Collector Through August 2017, the TCA "Data Cache" DVD- ROM Set, and the TCA Special Publications: No
1999-2017 INDEX This index covers Tube Collector through August 2017, the TCA "Data Cache" DVD- ROM set, and the TCA Special Publications: No. 1 Manhattan College Vacuum Tube Museum - List of Displays .........................1999 No. 2 Triodes in Radar: The Early VHF Era ...............................................................2000 No. 3 Auction Results ....................................................................................................2001 No. 4 A Tribute to George Clark, with audio CD ........................................................2002 No. 5 J. B. Johnson and the 224A CRT.........................................................................2003 No. 6 McCandless and the Audion, with audio CD......................................................2003 No. 7 AWA Tube Collector Group Fact Sheet, Vols. 1-6 ...........................................2004 No. 8 Vacuum Tubes in Telephone Work.....................................................................2004 No. 9 Origins of the Vacuum Tube, with audio CD.....................................................2005 No. 10 Early Tube Development at GE...........................................................................2005 No. 11 Thermionic Miscellany.........................................................................................2006 No. 12 RCA Master Tube Sales Plan, 1950....................................................................2006 No. 13 GE Tungar Bulb Data Manual................................................................. -
Philips DEALING with TECHNICAL PROBLEMS
VOL. 5 N~. 3 . Philips DEALING WITH TECHNICAL PROBLEMS. RELATING TO THE PRODUCTS, PROCESSES AND. INVESTIGATIONS OF N.V. PHILIPS' GLOEILAMPENFABRIEKEN EDITED BY THE RESEARCH LABORATORY OF N.V. PHILIPS' GLOEILAMPENFABRIEKEN, EINDHOVEN, HOLLAND TESTING A~PLIFIER OUTPUT VALVES BY MEANS OF THE 'CAT~ODE RAY TUBE hy A. J. HEINS van der VEN. 621.317.755: 621.396.645 I n testing amplifier output valves, the most important data are contained in the In' v.. diagram if one knows over which part of the diagram the values of voltage and current prevailing during operatien range, i;e. if the position of the load line is known. The la- Vn 'diagrams as well as the load lines can very easily b~ obtained with the help of a 'cathode ray tube. The necessary apparatus is described in this article. A number of auxiliary ar- rangernents are also studied, by which the axes and the necessary calibration lines in the diagram can be traced on the fluorescent screen, and which make it possible to. cause the diagrams of two .output valves which are to be compared to appear simultancously on the screen. In order to obtain the load line in the correct place in the diagram, use must he made of dir'ect current push-pull amplifiers for the deflection voltages of the cathode ray tube. The position of the load line upon inductive loading is discussed and explained by a number of examples. In conclusion one,npplication of the instaflation in the develop- ment of output pentodes is dealt with. If one wishes to characterize briefly the perfor- quantrties are to some degree dependent _on the mance of an output valve of !tn amplifier or radio loading impedance which is included in the anode set, it is enough to give the sensitivity, the distor- circuit, it is first necessary to find out how the loa'd- tion as a function of the power output, and in some ing of the ~alve is e~pl'esse~ in the Ia- V~ curve.' , cases the maximum power which can he delivered mA without grid current flowing. -
Bias Circuits for RF Devices
Bias Circuits for RF Devices Iulian Rosu, YO3DAC / VA3IUL, http://www.qsl.net/va3iul A lot of RF schematics mention: “bias circuit not shown”; when actually one of the most critical yet often overlooked aspects in any RF circuit design is the bias network. The bias network determines the amplifier performance over temperature as well as RF drive. The DC bias condition of the RF transistors is usually established independently of the RF design. Power efficiency, stability, noise, thermal runway, and ease to use are the main concerns when selecting a bias configuration. A transistor amplifier must possess a DC biasing circuit for a couple of reasons. • We would require two separate voltage supplies to furnish the desired class of bias for both the emitter-collector and the emitter-base voltages. • This is in fact still done in certain applications, but biasing was invented so that these separate voltages could be obtained from but a single supply. • Transistors are remarkably temperature sensitive, inviting a condition called thermal runaway. Thermal runaway will rapidly destroy a bipolar transistor, as collector current quickly and uncontrollably increases to damaging levels as the temperature rises, unless the amplifier is temperature stabilized to nullify this effect. Amplifier Bias Classes of Operation Special classes of amplifier bias levels are utilized to achieve different objectives, each with its own distinct advantages and disadvantages. The most prevalent classes of bias operation are Class A, AB, B, and C. All of these classes use circuit components to bias the transistor at a different DC operating current, or “ICQ”. When a BJT does not have an A.C.